WO2016185908A1

WO2016185908A1 - Organic el element and method for manufacturing substrate

Info

Publication number: WO2016185908A1
Application number: PCT/JP2016/063601
Authority: WO
Inventors: 祥司美馬
Original assignee: 住友化学株式会社
Priority date: 2015-05-15
Filing date: 2016-05-02
Publication date: 2016-11-24
Also published as: JPWO2016185908A1

Abstract

A method for manufacturing a substrate 10 according to an embodiment is provided with: a resin film formation step in which a resin film containing a transparent resin material to become a transparent resin filler 16 is formed on the obverse surface 12a of a transparent resin film 12 on which metal wiring 14 of a predetermined pattern having a plurality of openings 18 is formed, the resin film being formed so as to embed the metal wiring 14; a photocuring step in which, after the resin film formation step, visible light is irradiated from the reverse surface 12b side of the transparent resin film 12 so as to photocure the resin film in the openings 18; a developing step in which, after the optical curing step, a the resin film is subjected to a development process to remove the resin film on the metal wiring 14; and a thermal curing step in which, after the resin film on the metal wiring 14 is removed, the resin film left on the transparent resin film 12 is subjected to a heat treatment so as to heat-cure the resin film, thereby forming the transparent resin filler 16. Each of the openings 18 is filled with the transparent resin filler 16. The transparent resin material is thermosettable and is photocured by visible light.

Description

SUBSTRATE MANUFACTURING METHOD AND ORGANIC EL ELEMENT

The present invention relates to a substrate manufacturing method and an organic EL element.

There is a technique described in Patent Document 1 as a conventional technique in this technical field. In the technique described in Patent Document 1, a transparent resin film such as a plastic film has a conductive metal pattern (metal wiring), and a translucent portion (opening) where no conductive metal pattern exists is filled with a transparent resin. A method for producing a transparent conductive film (base material) is disclosed. Specifically, after forming a conductive metal pattern on a transparent resin film, a negative ultraviolet curable resin is applied so that the conductive metal pattern is buried. Here, after irradiating ultraviolet rays from the opposite side of the surface on which the ultraviolet curable resin is applied of the base material and curing the ultraviolet curable resin only by light reaction in the light transmitting part, uncrosslinked ultraviolet rays on the conductive metal pattern Resin is provided in the translucent part by removing the cured resin.

Japanese Patent No. 5245111 JP 2008-65319 A

However, the resin film generally has ultraviolet light absorption. Therefore, when the UV curable resin applied on the resin film is photocured from the opposite side of the surface of the substrate on which the UV curable resin has been applied, the ultraviolet light passes through the substrate. In this case, the UV curable resin is not sufficiently cured by light because it is absorbed by the substrate. And since light irradiation is needed for a long time in order to raise an integrated exposure amount, productivity falls. Therefore, for example, when manufacturing an organic electroluminescence element (hereinafter, referred to as “organic EL element” in some cases) using such a base material, the productivity of the organic EL element is likely to decrease.

Therefore, an object of the present invention is to provide a substrate manufacturing method and an organic EL element capable of improving productivity.

The manufacturing method of the base material which concerns on 1 side of this invention is a manufacturing method of a base material provided with the transparent resin film, the metal wiring of the predetermined pattern which has a several opening part, and a transparent resin filler, Comprising: The wiring is formed on the surface of the transparent resin film, the transparent resin filler is disposed in at least one opening of the plurality of openings, and the base material manufacturing method includes forming the metal wiring On the surface of the transparent resin film, a resin film containing a transparent resin material that becomes a transparent resin filler is formed so as to embed a metal wiring, and after the resin film forming process, from the back side of the transparent resin film A photo-curing process for irradiating visible light to photo-curing the resin film in the opening, a developing process for removing the resin film on the metal wiring by developing the resin film after the photo-curing process, and on the metal wiring Resin film And a thermosetting step of forming a transparent resin filler by heat-treating and thermosetting the resin film remaining on the transparent resin film, and the transparent resin material has thermosetting properties and is visible It is a transparent resin material that is photocured by light.

In the manufacturing method, a resin film containing the transparent resin material is formed on the surface of a transparent resin film on which a predetermined pattern of metal wiring having a plurality of openings is formed so as to embed the metal wiring. Thereafter, the resin film is photocured by irradiating the resin film with visible light from the back side of the transparent resin film. That is, the resin film is back exposed. When the resin film is irradiated with visible light from the back side of the transparent resin film, the metal wiring functions as a mask, so that the resin film on the metal wiring is unexposed to visible light. Therefore, after the photocuring step, the unexposed resin film can be developed to remove the resin film on the metal wiring and selectively leave the resin film in the opening. In the above manufacturing method, after the development step, the resin film is heat-treated and thermally cured, so that the resin film selectively remaining in the opening is thermally cured to become a transparent resin filler. Thereby, the base material by which the metal wiring is provided in the surface of the transparent resin film, and the transparent resin filler is arrange | positioned in at least one opening part of the several opening part in the predetermined pattern of metal wiring can be manufactured. . The transparent resin material contained in the resin film as the transparent resin material that becomes the transparent resin filler is photocured by visible light. Even if the resin film is irradiated with visible light through the transparent resin film, the visible light is hardly absorbed by the transparent resin film and is applied to the resin film. Therefore, in the photocuring step, the resin film can be reliably and efficiently photocured with visible light. As a result, it is possible to improve the productivity of the base material.

In one embodiment, when the average thickness of the transparent resin filler is T1 and the average thickness of the metal wiring is T2, (T1 / T2) is not less than 0.5 and not more than 1.5, and transparent When the thickness of the transparent resin filler is T3 and the thickness of the metal wiring is T4 at the boundary between the resin filler and the metal wiring, (T3 / T4) is larger than 0.8 and smaller than 1.2. Also good.

In this case, the unevenness of the surface constituted by the surface of the metal wiring and the surface of the transparent resin filler is reduced. That is, a base material with good surface smoothness can be obtained.

In one embodiment, the width of the metal wiring may be 10 μm or more. When the resin film is photocured by irradiation with visible light, the metal wiring functions as a mask. However, in the vicinity of the side surface of the metal wiring, part of the visible light is also irradiated to the resin film on the metal wiring by light diffraction. There is a case. If the width of the metal wiring is smaller than 10 μm, the resin film on the metal wiring is relatively hardened by the influence of such diffraction, so that the resin film remains on the metal wiring after the development process. easy. On the other hand, if the width of the metal wiring is 10 μm or more, relatively more resin film on the metal wiring can be removed.

In one embodiment, the angle formed between the side surface of the metal wiring and the surface of the transparent resin film may be 60 ° or more and 100 ° or less.

In this case, when the resin film is photocured by irradiation with visible light, the resin film on the metal wiring is hardly irradiated with visible light, and the resin film on the metal wiring can be more reliably removed by development processing.

In one embodiment, in the photocuring step, visible light is irradiated onto the transparent resin film as parallel light, and the angle formed between the irradiation direction of the parallel light on the back surface and the normal direction of the back surface is 20 ° or less. Good.

In one embodiment, the transparent resin material forms a test resin film having the same composition as the resin film, and when the test resin film is photocured with visible light and then developed, A transparent resin material in which (t2 / t1) is 0.6 or more, where t1 is the thickness of the test resin film before development processing and t2 is the thickness of the test resin film after development processing It may be.

The above-mentioned transparent resin material having (t2 / t1) of 0.6 or more is a material that has high sensitivity to visible light and is easily solidified. By using such a transparent resin material that tends to harden, the difference between the thickness of the transparent resin filler and the thickness of the metal wiring can be reduced at the boundary between the transparent resin filler and the metal wiring.

In one embodiment, the resin film absorbs more near infrared light than the transparent resin film, and in the thermosetting process, the resin film is irradiated with near infrared light from the surface side of the transparent resin film. You may heat-process. In this case, since the near infrared light is irradiated to the resin film from the surface side of the transparent resin film, the near infrared light is mainly absorbed by the resin film. Therefore, the transparent resin film is hardly affected by near infrared light.

In one embodiment, at least one of a resin film forming step, a photocuring step, a developing step, and a thermosetting step may be performed by a roll-to-roll method. In this case, by adopting the roll-to-roll method, it is possible to efficiently perform the process in the process performed by the roll-to-roll method.

An organic EL device according to another aspect of the present invention includes a substrate having a transparent resin film, a predetermined pattern of metal wiring having a plurality of openings, and a transparent resin filler, on the metal wiring of the substrate. A first electrode disposed; a second electrode disposed on the first electrode; and a light emitting layer disposed between the first electrode and the second electrode, wherein the metal wiring is made of a transparent resin film. A transparent resin material that is formed on the surface, the transparent resin filler is disposed in at least one of the plurality of openings, and the transparent resin filler has thermosetting properties and is photocured by visible light. Or the hardened | cured material is included, and a light emitting layer contains an organic material.

In the configuration of the organic EL element, the first and second electrodes are provided on the base material, and the light emitting layer is provided between them. Therefore, power can be supplied to the first and second electrodes to emit light from the light emitting layer. The base material has a metal wiring on the transparent resin film, and the first electrode is provided on the metal wiring. Therefore, power can be supplied to the first electrode via the metal wiring. Since the metal wiring exhibits a predetermined pattern having a plurality of openings, for example, a voltage drop in the vicinity of the center portion in a plane orthogonal to the thickness direction of the organic EL element is more than that when power is directly supplied to the first electrode. Reduced. Therefore, in-plane luminance uniformity can be improved in the organic EL element. Furthermore, since the transparent resin filler is disposed in at least one of the plurality of openings, the interface between the base material and the first electrode is smoothed. As a result, each of the first electrode, the light emitting layer, and the second electrode can be formed with a uniform thickness. Thereby, there is no part which becomes thin locally in the light emitting layer formed on the flat 1st electrode, and an organic EL element with high luminous efficiency can be produced.

Since the transparent resin filler contains a transparent resin material that is thermosetting and photocured by visible light or a cured product thereof, visible light is irradiated from the back side of the base material during manufacture of the base material. Thereby, the transparent resin material used as a transparent resin filler can be photocured. Since the transparent resin film can use visible light that has substantially no absorption for photocuring the transparent resin material, the transparent resin material can be efficiently photocured. As a result, since the productivity of the base material is improved, the productivity of the organic EL element is also improved.

In one embodiment, when the average thickness of the transparent resin filler is T1 and the average thickness of the metal wiring is T2, (T1 / T2) is larger than 0.5 and smaller than 1.5, and transparent When the thickness of the transparent resin filler is T3 and the thickness of the metal wiring is T4 at the boundary between the resin filler and the metal wiring, (T3 / T4) is larger than 0.8 and smaller than 1.2. Also good.

In this case, the unevenness of the surface constituted by the surface of the metal wiring and the surface of the transparent resin filler is reduced. That is, the surface of the base material is flatter. For this reason, current leakage is unlikely to occur, and the light emission efficiency can be further improved.

According to the present invention, a substrate manufacturing method and an organic EL element capable of improving productivity can be provided.

FIG. 1 (a) is a schematic plan view of a base material manufactured by the base material manufacturing method according to one embodiment, and FIG. 1 (b) is a line Ib-Ib in FIG. 1 (a). FIG. FIG. 2 (a) is a schematic plan view of a resin film with wiring, which is a transparent resin film having a metal wiring formed in a predetermined pattern on the surface, and FIG. 2 (b) is a diagram of IIb in FIG. 2 (a). FIG. 11 is a cross-sectional view taken along the line -IIb. Drawing 3 is a mimetic diagram showing an example of the manufacturing method of the substrate concerning one embodiment. 4A is a schematic plan view of the resin film with wiring after undergoing the resin film formation step, and FIG. 4B is a cross-sectional view taken along line IVb-IVb in FIG. 4A. It is. FIG. 5 is a drawing for explaining the characteristics of the transparent resin material. FIG. 6 is a drawing showing an example of a visible light irradiation method in the photocuring step. FIG. 7 is a schematic plan view of the resin film with wiring after the development process, and FIG. 7B is a cross-sectional view taken along the line VIIb-VIIb in FIG. FIG. 8 is a schematic diagram of a cross-sectional configuration of an organic EL element according to an embodiment.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. The same symbols are assigned to the same elements. A duplicate description is omitted. The dimensional ratios in the drawings do not necessarily match those described.

(First embodiment)
As shown in FIGS. 1A and 1B, the base material 10 manufactured by the base material manufacturing method according to the first embodiment includes a transparent resin film 12, a metal wiring 14, and a transparent material. And a resin filler 16. The base material 10 functions as a base material (supporting member) of an organic electronic element such as an organic electroluminescence element (organic EL element).

The transparent resin film 12 is made of a resin that is transparent to visible light (light having a wavelength of 400 nm to 800 nm). An example of the thickness of the transparent resin film 12 is 30 μm or more and 500 μm or less. The transparent resin film 12 may be strip-shaped or sheet-shaped.

The transparent resin film 12 is a plastic film, for example. Examples of the material of the transparent resin film 12 include polyethersulfone (PES); polyester resin such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN); polyolefin resin such as polyethylene (PE), polypropylene (PP), and cyclic polyolefin. Polyamide resin; Polycarbonate resin; Polystyrene resin; Polyvinyl alcohol resin; Saponified ethylene-vinyl acetate copolymer; Polyacrylonitrile resin; Acetal resin; Polyimide resin;

Among these resins, a polyester resin or a polyolefin resin is preferable because of high heat resistance, a low linear expansion coefficient, and a low manufacturing cost, and polyethylene terephthalate or polyethylene naphthalate is particularly preferable. Moreover, these resin may be used individually by 1 type, and may be used in combination of 2 or more type.

The metal wiring 14 is formed in a predetermined pattern having a plurality of openings 18 (through holes extending in the thickness direction of the metal wiring 14, for example, window portions) on the surface 12 a of the transparent resin film 12. Such a metal wiring 14 corresponds to a metal layer having a plurality of openings 18. An example of the thickness of the metal wiring 14 is 20 nm or more and 2 μm or less. An example of the width of the metal wiring 14 is 10 μm or more. Usually, the width of the metal wiring 14 is 5 mm or less. The width of the metal wiring 14 means the length of the metal wiring 14 on a line connecting between the centers of the adjacent openings 18. The example of the material of the metal wiring 14 may be selected from silver, aluminum, copper, gold, nickel, iron, molybdenum, and chromium, and may be selected from an alloy containing one or more of these metals.

An example of the predetermined pattern of the metal wiring 14 is a lattice pattern as shown in FIG. 1A, and in this case, the plurality of openings 18 correspond to a mesh. Examples of mesh shapes include quadrilaterals such as rectangles or squares, triangles, and hexagons. In the predetermined pattern, the metal wiring 14 may have a network structure.

As shown in FIG. 1A, when the shape of the mesh in the predetermined pattern is a square, the mesh-like metal wiring 14 extends in the first direction and crosses the first direction. A plurality of metal wires 141 arranged in parallel in the direction and a plurality of metal wires 142 extending in the second direction and arranged in parallel in the first direction. FIG. 1A illustrates a state where the first and second directions are orthogonal to each other. As described above, when the

metal wires

141 and 142 of the metal wiring 14 are provided in a lattice shape, the width of the metal wiring 14 is a length in a direction orthogonal to the extending direction of the

metal wires

141 and 142. .

When the base material 10 is applied to, for example, an organic EL element, the metal wiring 14 functions as a grid electrode for supplying power to an electrode that the organic EL element has and is formed in contact with the metal wiring 14. . The size of the opening 18 defining the predetermined pattern of the metal wiring 14 and the width of the metal wiring 14 are set so that light can be extracted from the base material 10 side when the base material 10 is applied to an organic EL element, for example. It only has to be. The area ratio between the metal wiring 14 and the opening 18 (metal wiring: opening) is appropriately selected from the viewpoint of the conductivity of the metal wiring 14 and the ratio of light extraction from the opening 18. 50:50 is preferred.

The transparent resin filler 16 is disposed in at least one of the plurality of openings 18. The transparent resin filler 16 is filled in each of the plurality of openings 18 and fills the openings 18, for example. The transparent resin filler 16 functions as a planarization film for planarizing the surface of the substrate 10 including the transparent resin film 12 and the metal wiring 14 when the substrate 10 is applied to, for example, an organic EL element. The thickness of the transparent resin filler 16 is substantially the same as the thickness of the metal wiring 14.

In one embodiment, the metal wiring 14 and the transparent resin filler 16 may satisfy the following two conditions.
<Condition 1>
When the average thickness of the transparent resin filler 16 is T1, and the average thickness of the metal wiring 14 is T2, (T1 / T2) is 0.5 or more and 1.5 or less. (T1 / T2) may be larger than 0.5 and smaller than 1.5. The average thickness T1 of the transparent resin filler 16 and the average thickness T2 of the metal wiring 14 are, for example, lines connecting the centers of the adjacent openings 18 (for example, in the case of FIG. 1A, the longitudinal length of the transparent resin film 12). The average thickness of the transparent resin filler 16 of any (for example, an average value based on the measurement results of five points) when the cross section of the substrate 10 is cut in a direction or a line parallel to the short direction, and the This is the average thickness of the metal wiring 14 adjacent to the transparent resin filler 16.
<Condition 2>
The thickness of the transparent resin filler 16 at the boundary between the transparent resin filler 16 and the metal wiring 14 (contact portion between the transparent resin filler 16 and the metal wiring 14) is T3, and the thickness of the metal wiring 14 is T4. (T3 / T4) is larger than 0.8 and smaller than 1.2.

By satisfying the conditions 1 and 2, the unevenness of the surface 10a of the substrate 10 constituted by the surface 16a of the transparent resin filler 16 and the surface 14a of the metal wiring 14 is reduced, and a substantially flat surface can be obtained.

The transparent resin material used as the transparent resin filler 16 is not particularly limited as long as it has a negative photosensitive property that is photocured by visible light and has a thermosetting property. The transparent resin material that becomes the transparent resin filler 16 will be described in detail later.

In the configuration of the base material 10 shown in FIGS. 1A and 1B, the surface 14a of the metal wiring 14 formed on the transparent resin film 12 is exposed. Therefore, for example, even if an electrode (anode or cathode) included in an organic electronic element such as an organic EL element is formed on the surface 10 a of the base material 10, power can be supplied to the electrode using the metal wiring 14. . Furthermore, since the opening 18 is filled with the transparent resin filler 16, even if each layer constituting the organic electronic element is formed on the surface 10a of the substrate 10, each of the layers has a uniform thickness. It is easy to form with.

In the description of the base material 10 so far, the configuration on the transparent resin film 12 has been described with reference to the metal wiring 14. On the other hand, when the transparent resin filler 16 filling the opening 18 is taken as a reference, the base material 10 is formed on the transparent resin film 12 with a transparent resin layer made of a transparent resin material constituting the transparent resin filler 16. In addition, a metal wiring having a network structure is provided between the transparent resin layers so that the surface is exposed.

Next, a method for manufacturing the substrate 10 will be described. The manufacturing method of the base material 10 includes a resin film forming step, a photocuring step, a developing step, and a thermosetting step. In the resin film forming step, a resin film containing a transparent resin material to be the transparent resin filler 16 is formed on the surface 12a of the transparent resin film 12 on which the metal wiring 14 is formed so as to embed the metal wiring 14. In the photocuring step, visible light is irradiated from the back surface 12b (surface opposite to the front surface 12a) side of the transparent resin film 12 after the resin film forming step to photocur the resin film in the opening 18. In the development process, after the photocuring process, the resin film on the metal wiring 14 is removed by developing the resin film. In the thermosetting process, after the resin film on the metal wiring 14 is removed (after the development process), the resin film remaining on the transparent resin film 12 (resin film remaining in the opening 18) is heated and heated. The transparent resin filler 16 is formed by curing.

Here, as shown in FIGS. 2 (a) and 2 (b), a method of manufacturing the base material 10 using the band-shaped transparent resin film 12 in which the metal wiring 14 is previously formed on the surface 12a will be described. . Hereinafter, the transparent resin film 12 on which the metal wiring 14 is formed is referred to as a “resin film with wiring 20”.

First, a method for producing the resin film with wiring 20 (specifically, a method for forming the metal wiring 14) will be described. The method for forming the metal wiring 14 is not particularly limited as long as a predetermined pattern having a plurality of openings 18 can be formed. For example, in order to produce the metal wiring 14, first, a metal thin film layer is formed on the transparent resin film 12 using a sputtering method, a vapor deposition method, a CVD method, or the like. Thereafter, a resin film for protecting the surface of the metal thin film layer is formed on the surface of the metal thin film layer by photolithography so as to form a pattern of the metal wiring 14. By immersing this transparent resin film with a metal film in an etching solution in which the metal dissolves, the metal at a location where the metal surface is not protected by the resin film is etched. Thereafter, the desired metal wiring 14 can be obtained by peeling off the protective resin film. Further, the metal wiring 14 may be formed by, for example, printing the ink in which the metal particles are dispersed on the pattern of the metal wiring 14 using various printing methods such as ink jet printing, gravure printing, or screen printing, and then baking the ink. Can be formed.

The metal wiring 14 is formed, for example, such that an angle θ1 formed by the side surface 14b of the metal wiring 14 and the surface 12a of the transparent resin film 12 is substantially 90 °. The angle θ1 may be not less than 60 ° and not more than 100 °, and may be not less than 80 ° and not more than 100 °. The side surface 14 b of the metal wiring 14 is a surface that defines the opening 18 in the metal wiring 14.

Next, the manufacturing method of the base material 10 using the resin film 20 with wiring is demonstrated. The base material 10 can be manufactured, for example, by the base material manufacturing method shown in FIG. FIG. 3 schematically shows an example of a method in the case of manufacturing the substrate 10 by a roll-to-roll method.

In the manufacturing method of the base material 10 by the roll-to-roll system, the resin film 20 with wiring is unwound from the unwinding roll R1 around which the resin film 20 with wiring is wound, and is transported by the transporting roll R2, and then wired to the winding roll R3. The base material 10 is manufactured by forming the transparent resin filler 16 while the attached resin film 20 is wound up.

Specifically, as schematically shown in FIG. 3, the resin film forming step S10, the photocuring step S12, the developing step S14, and the baking are performed on the resin film with wiring 20 fed from the unwinding roll R1. Process (thermosetting process, filler formation process) S16 is implemented in order.

In the resin film forming step S10, a coating liquid containing a transparent resin material to be the transparent resin filler 16 is applied from the coating device 22 to the surface of the resin film with wiring 20 on which the metal wiring 14 is formed, and the resin film is applied. Form. The solvent for the coating solution is not particularly limited as long as it can dissolve the transparent resin material. Examples of the solvent include diethylene glycol ethyl methyl ether, propylene glycol 1-monomethyl ether 2-acetate, 3-methoxybutyl acetate, 3-methoxy-1-butanol and cyclohexanone.

As coating methods, slot die method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, spray coating method, screen printing method, flexographic printing method, An offset printing method, an inkjet printing method, etc. can be mentioned.

In the resin film formation step S10, as shown in FIGS. 4A and 4B, the resin film 24 is formed so as to embed the entire metal wiring 14. In this case, a substrate in which the metal wiring 14 is provided on the surface 12a of the transparent resin film 12 and each of the plurality of openings 18 in the predetermined pattern of the metal wiring 14 is filled with the transparent resin filler 16 is used. Can be manufactured. In consideration of the degree of shrinkage of the transparent resin material in the photocuring step S2, the developing step S14, and the baking step S16, the thickness of the resin film 24 is equal to the thickness of the resin film 24 at the position of the opening 18. The thickness can satisfy <Condition 1> and <Condition 2>.

The transparent resin material used as the transparent resin filler 16 may be any transparent resin material that can be photocured with visible light and has thermosetting properties as described above.

An example of the transparent resin material in one embodiment will be described. First, a test for explaining the characteristics of the transparent resin material will be described with reference to FIG. As the transparent resin material in one embodiment, as described below, a test resin film having the same composition as the resin film containing the transparent resin material to be the transparent resin filler 16 is formed, and the test resin film is subjected to a predetermined condition. Below, when developing after photocuring with visible light, the thickness of the test resin film after photocuring and before development is t1, and the thickness of the test resin film after development is When the thickness is t2, a transparent resin material in which (t2 / t1) is a predetermined value or more can be used.

For example, as shown in FIG. 5, first, a test resin film 24a having the same composition as the resin film 24 is coated on a support substrate 26 such as a glass substrate so that a film having a thickness of 350 nm is formed. (Coating process) Next, the test resin film 24a is exposed to visible light (exposure process). The exposure process (photocuring process) of the test resin film 24a is performed from the side opposite to the surface on which the test resin film 24a is formed. The thickness of the test resin film 24a after the exposure process (photocuring process) is defined as t1. After the exposure process, a development process is performed (development process). After the development step, the thickness of the remaining test resin film 24a is defined as t2. In FIG. 5, the two-dot chain line indicates the surface of the test resin film 24a after the development process.

The conditions in the exposure process (photocuring process) and the development process are, for example, the conditions C1 or C2 that are the predetermined conditions shown in Table 1. In the exposure process, after performing an exposure process with an exposure amount of 500 mJ / cm ² using a low-pressure mercury lamp (corresponding to 355 nm), in the development process, the development process is performed using the developer shown in Table 1 in the immersion method shown in Table 1. I do. The method for forming the film in the coating step is not particularly limited, and examples thereof include a spin coating method. In the case of performing the spin coating method, the rotation speed may be 2500 rpm, for example, and the rotation holding time may be 30 seconds, for example. Furthermore, when performing by a spin coat method, you may perform a prebaking process for solvent removal. An example of the treatment in this pre-baking step is a pre-baking treatment in an oven at a temperature of 100 ° C. for 3 minutes.

The transparent resin material in one embodiment is a material in which (t2 / t1) satisfies 0.6 or more in the above test.

As the transparent resin material, for example, a polymerizable resin compound described in Patent Document 2 (Japanese Patent Application Laid-Open No. 2008-65319) can be suitably used. In particular, the transparent resin material having the composition shown in Table 2 is particularly excellent in photocuring characteristics by visible light, development characteristics, and adhesion, and can be suitably used as the transparent resin film of the present embodiment.

In the photocuring step S12, as shown in FIG. 3, the resin film 24 is photocured by irradiating visible light from the light source 28 arranged on the back surface 12b side of the resin film 20 with wiring. Examples of the light source 28 include, for example, a high-pressure mercury lamp, a gallium lamp, a metal halide lamp, a xenon lamp, and an SSD (Super Small Discharge) lamp configured to cut ultraviolet light. Since the metal wiring 14 does not transmit visible light, the resin film 24 on the metal wiring 14 is in an unexposed state. That is, in the photocuring step S12, the back exposure is performed using the metal wiring 14 as a mask.

In one embodiment, as shown in FIG. 6, the visible light is irradiated to the resin film 20 with wiring as parallel light. The irradiation direction of visible light (parallel light) is such that the angle θ2 formed by the direction of the normal line n (normal direction) of the back surface 12b of the resin film with wiring 20 and the irradiation direction of the visible light back surface 12b is 20 ° or less. It is preferable that the direction is satisfied.

In the developing step S14, as shown in FIG. 3, the resin film 24 that has been exposed (photocured) in the photocuring step S12 is developed. Specifically, the resin film with wiring 20 that has undergone the photocuring step S12 is immersed in the developer 30a in the developing container 30 to develop the resin film 24. Thereby, as shown in FIG. 7A and FIG. 7B, the unexposed portion (for example, the resin film 24 on the metal wiring 14) in the resin film 24 is removed. As a result, the surface 14 a of the metal wiring 14 is exposed, while the resin film 24 remains in the opening 18. Here, the developing method using the developer 30a is illustrated, but the developing method is not particularly limited as long as the exposed resin film 24 can be developed.

In the baking step S16, as shown in FIG. 3, the resin film 24 that has undergone the developing step S14 is heated by the heating device 32. Thereby, the resin film 24 is thermoset to form the transparent resin filler 16. The method for heat treatment of the resin film 24 by the heating device 32 is not particularly limited, and for example, a method of irradiating the resin film 24 with near infrared light is exemplified.

In one embodiment of the heat treatment method using near-infrared light, the heating device 32 includes a light source 32a disposed to face the resin film 24 as illustrated in FIG. The example of the light source 32a should just be what can selectively output near-infrared light. For example, the light source 32a may be a lamp that can output infrared light including near infrared light and a filter that selectively passes near infrared light. In order to further reduce the heat rise of the transparent resin film 12, the transparent resin film 12 may be heat-treated while being cooled. Examples of the cooling method include air cooling. Near-infrared light is, for example, light having a wavelength of 0.7 μm to 5.0 μm.

When the near infrared light is output from the light source 32a disposed opposite to the resin film 24 to heat the resin film 24, the resin film 24 is formed from the surface of the resin film with wiring 20 (surface on which the metal wiring 14 is formed). This corresponds to heat treatment of the resin film 24 by irradiating with a near infrared light. In such a heat treatment method, when the absorption of near-infrared light in the resin film 24 is more than the absorption of near-infrared light in the transparent resin film 12, the viewpoint of reducing the influence on the transparent resin film 12 by the near-infrared light To preferred.

The absorption of near-infrared light in the resin film 24 is more than the absorption of near-infrared light in the transparent resin film 12 means that the resin film 24 in near-infrared light in a predetermined wavelength region (wavelength 0.7 μm to 2.5 μm). This means that the integral value of the absorption spectrum is larger than the integral value of the absorption spectrum of the transparent resin film 12 in the near-infrared light in the predetermined wavelength region.

Since PEN hardly absorbs near-infrared light, heat treatment by irradiation with near-infrared light is effective when the transparent resin film 12 is made of PEN.

The base material 10 as the resin film with wiring 20 in which the transparent resin filler 16 is disposed (for example, filled) in the opening 18 through the baking step S16 is wound around the winding roll R3 as shown in FIG. .

In the manufacturing method of the base material 10 described above, the transparent resin filler 16 is formed using a transparent resin material that can be photocured with visible light. Since the transparent resin film 12 does not substantially absorb visible light, even if the resin film 24 is irradiated with visible light from the back side of the transparent resin film 12, the visible light is not affected by the transparent resin film 12. The resin film 24 is irradiated.

The transparent resin film (for example, plastic film) 12 usually has absorption in the wavelength region of ultraviolet light. Therefore, if the resin film is composed of an ultraviolet curable resin and the ultraviolet light is irradiated from the transparent resin film 12 side, a part of the ultraviolet light is absorbed by the transparent resin film 12, and the resin film is insufficiently cured. There is a possibility that the transparent resin filler cannot be formed properly. Alternatively, more time is required for photocuring.

In contrast, in the method of manufacturing the base material 10 shown in FIG. 3, the resin film 24 can be photocured with visible light that is not affected by the transparent resin film 12. Therefore, the energy of visible light to be irradiated can be effectively used for photocuring, and therefore, for example, the resin film 24 can be photocured more reliably and in a shorter time than when ultraviolet light is used. Therefore, the productivity of the base material 10 can be improved.

In the photocuring step S12, the metal film 14 functions as a mask because the resin film 24 is exposed from the transparent resin film 12 side. Therefore, even if the resin film 24 is exposed to visible light, the resin film 24 on the surface 14a of the metal wiring 14 is in an unexposed state. Thereby, the resin film 24 on the surface 14a can be removed in the development step S14.

Thereby, even if an electrode (for example, an anode) of an organic EL element is formed on the base material 10, no resin as an insulator is interposed between the electrode and the metal wiring 14. Power can be efficiently supplied to the electrode via

When the transparent resin filler 16 and the metal wiring 14 satisfy <Condition 1> and <Condition 2> described above, the transparent resin filler 16 and the metal wiring 14 are connected substantially without a step, and the surface 10a of the substrate 10 is more It becomes a flat surface. Therefore, for example, even if a layer such as an electrode or a functional layer constituting the organic EL element is formed on the surface 10a, the thickness of each of the plurality of layers becomes uniform. In this case, the movement of charges is not easily inhibited, and as a result, the light emission efficiency is improved.

In the form in which the width of the metal wiring 14 is 10 μm or more, the resin film 24 on the surface 14a of the metal wiring 14 can be more reliably removed. This point will be described in comparison with the case where the width of the metal wiring 14 is smaller than 10 μm.

When the resin film 24 is photocured by irradiation of visible light, the metal wiring 14 functions as a mask, but in the vicinity of the side surface 14b of the metal wiring 14, a part of visible light is on the surface 14a of the metal wiring 14 due to light diffraction. The resin film 24 may also be irradiated. If the width of the metal wiring 14 is smaller than 10 μm, the ratio of exposure of the resin film 24 on the surface 14a in the width direction of the metal wiring 14 is relatively increased due to the influence of such diffraction. In this case, the resin film 24 tends to remain on the surface 14a after the development processing. On the other hand, if the width of the metal wiring 14 is 10 μm or more, the influence of diffraction is reduced, and the resin film 24 on the surface 14a is difficult to be exposed. Therefore, the resin film 24 on the surface 14a can be relatively more removed. .

In the form in which the angle θ1 formed between the side surface 14b of the metal wiring 14 and the surface 12a of the transparent resin film 12 is 60 ° or more and 100 ° or less, the side surface 14b is substantially perpendicular to the surface 12a. Therefore, when the resin film 24 is irradiated with visible light, the resin film 24 on the surface 14 a of the metal wiring 14 is not easily irradiated with visible light. Therefore, the resin film 24 on the surface 14a can be more reliably removed in the developing step S14. In an embodiment in which the angle θ1 is not less than 80 ° and not more than 100 °, such an effect can be obtained more suitably.

In the form of the visible light irradiation method described using FIG. 6, the irradiation direction (traveling direction) of visible light as parallel light and the direction of the normal line n (normal direction) of the back surface 12 b of the transparent resin film 12. Is within 20 °. In this case, visible light as parallel light is likely to enter the transparent resin film 12 substantially perpendicularly, and the resin film 24 on the surface 14 a of the metal wiring 14 is not easily irradiated with visible light. Therefore, in the developing step S14, the resin film 24 on the surface 14a is more reliably removed. In particular, when the side surface 14b of the metal wiring 14 is substantially perpendicular to the surface 12a of the transparent resin film 12, the visible light irradiation method shown in FIG. 6 is effective.

The transparent resin material used as the transparent resin filler 16 is (t2 / t1) described with reference to FIG. 5 being 0.6 or more (when expressed in percentage, (t2 / t1) is 60% or more). When the condition is satisfied, the transparent resin material is sensitive to visible light and easily hardens. The resin film 24 (or transparent resin material) in contact with the side surface 14b of the metal wiring 14 may be less likely to be irradiated with visible light than the central portion of the opening 18, that is, the energy absorbed by the resin film may be small. If the transparent resin material is sensitive to visible light, it can be cured with less visible light irradiation energy. Therefore, when the transparent resin material that satisfies the condition regarding (t2 / t1) described with reference to FIG. 5 is used, when the thickness of the resin film 24 is T3 and the thickness of the metal wiring 14 is T4, the developing process. After passing through S4, the thickness ratio (T3 / T4) at the boundary between the resin film 24 remaining in the opening 18 and the metal wiring 14 can be made larger than 0.8 and smaller than 1.2. . As a result, it is easy to manufacture the substrate 10 that satisfies the above <Condition 1> and <Condition 2>.

In the form in which the resin film 24 absorbs more near-infrared light than the transparent resin film 12, as described above, for example, near-infrared from the surface side (that is, the resin film 24 side) of the transparent resin film 12 in the baking step S16. The resin film 24 is heated by irradiating the resin film 24 with light. In this case, since near-infrared light is mainly absorbed by the resin film 24, the resin film 24 can be heated while the transparent resin film 12 maintains the temperature below the glass transition temperature more reliably. Therefore, the deformation of the transparent resin film 12 due to the baking process in the baking step S16 can be suppressed, and the manufacturing yield is improved, so that the productivity is further improved.

In the above description of the manufacturing method, the transparent resin film 12 in which the metal wiring 14 is formed in advance is prepared, and the opening 18 is filled with the transparent resin filler 16. However, for example, the metal wiring 14 and the transparent resin filler 16 may be sequentially formed on the transparent resin film 12. Further, in the resin film forming step S10, the resin film 24 is not limited to be formed so as to embed the entire metal wiring 14, and the resin film 24 is disposed in at least one of the plurality of openings 18. It suffices that at least a part of the metal wiring 14 is embedded with the resin film 24. The manufacturing method of the substrate 10 is not limited to the roll-to-roll manufacturing method. For example, you may form the metal wiring 14 and the transparent resin filler 16 with respect to the transparent resin film 12 of a sheet | seat. When manufacturing the base material 10, you may perform at least one of resin film formation process S10, photocuring process S12, image development process S14, and baking process S16 by a roll-to-roll system. For example, the resin film forming step S10, the photocuring step S12 and the developing step S14 may be performed by a roll-to-roll method, and the baking step S16 may be performed again by a roll-to-roll method.

(Second Embodiment)
As the second embodiment, an organic EL element including the base material 10 manufactured by the manufacturing method of the first embodiment will be described.

The organic EL element 38 schematically shown in FIG. 8 includes a laminate including an anode (first electrode) 40a, a cathode (second electrode) 40b, and a light emitting layer 40c disposed between the anode 40a and the cathode 40b. The laminated body 40 is provided on the base material 10. That is, the organic EL element 38 includes an anode 40a disposed on the metal wiring 14 of the substrate 10, a cathode 40b disposed on the anode 40a, and a light emitting layer disposed between the anode 40a and the cathode 40b. . Since the structure of the base material 10 is the same as the structure of the base material 10 shown in FIG. 1A and FIG.

A thin film made of metal oxide, metal sulfide, metal, or the like can be used for the anode 40a. Specifically, indium oxide, zinc oxide, tin oxide, indium tin oxide (Indium Tin Oxide: abbreviated as ITO) A thin film made of indium zinc oxide (Indium Zinc Oxide: abbreviation IZO), gold, platinum, silver, and / or copper can be used. In the case of an organic EL element configured to emit light emitted from the light emitting layer 40c to the outside of the element through the anode 40a, an electrode exhibiting light transmittance is used for the anode 40a.

The material of the cathode 40b is preferably a material having a small work function, easy electron injection into the light emitting layer 40c, and high electrical conductivity. Further, in the organic EL element configured to extract light from the anode 40a side, the light emitted from the light emitting layer 40c is reflected by the cathode 40b to the anode 40a side. High materials are preferred. For the cathode 40b, for example, an alkali metal, an alkaline earth metal, a transition metal, a Group 13 metal of the periodic table, or the like can be used. Further, as the cathode 40b, a transparent conductive electrode made of a conductive metal oxide, a conductive organic material, or the like can be used.

The light emitting layer 40c contains an organic material. The light emitting layer 40c is usually formed of an organic substance that mainly emits fluorescence and / or phosphorescence, or an organic substance and a dopant that assists the organic substance. The dopant is added, for example, to improve the light emission efficiency or to change the light emission wavelength. In addition, the organic substance contained in the light emitting layer 40c may be a low molecular compound or a high molecular compound. Examples of the light emitting material constituting the light emitting layer 40c include known dye-based materials, metal complex-based materials, polymer-based materials, and dopant materials.

Examples of dye-based materials include cyclopentamine derivatives, tetraphenylbutadiene derivative compounds, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds. Pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.

Examples of metal complex materials include rare earth metals (Tb, Eu, Dy, etc.), Al, Zn, Be, Ir, Pt, etc. as the central metal, and oxadiazole, thiadiazole, phenylpyridine, phenylbenzo Examples thereof include metal complexes having an imidazole or quinoline structure as a ligand.

As polymer materials, polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, the above dye materials or metal complex light emitting materials are polymerized. The thing etc. can be mentioned.

Among the above light emitting materials, examples of materials that emit blue light include distyrylarylene derivatives, oxadiazole derivatives and polymers thereof, polyvinylcarbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives.

In addition, examples of materials that emit green light include quinacridone derivatives, coumarin derivatives and polymers thereof, polyparaphenylene vinylene derivatives, and polyfluorene derivatives.

In addition, examples of the material that emits red light include a coumarin derivative, a thiophene ring compound and a polymer thereof, a polyparaphenylene vinylene derivative, a polythiophene derivative, and a polyfluorene derivative.

Examples of the dopant material include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarylium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, and phenoxazone.

The anode 40a, the cathode 40b, and the light emitting layer 40c can be formed by a vapor deposition method or a coating method. As the coating method, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, dip coating method, slit coating method, capillary coating method, spray coating method, Examples thereof include a nozzle coating method, a gravure printing method, a screen printing method, a flexographic printing method, an offset printing method, a reverse printing method, and an ink jet printing method. When pattern coating is required, the anode 40a, the cathode 40b, and the light emitting layer 40c are formed by a coating method capable of pattern coating, and particularly preferably formed by an ink jet printing method.

The solvent for the ink (coating liquid) used in the coating method is not particularly limited as long as it can dissolve each material. Examples of the solvent include chlorine solvents such as chloroform, methylene chloride, and dichloroethane; ether solvents such as tetrahydrofuran; aromatic hydrocarbon solvents such as toluene and xylene; ketone solvents such as acetone and methyl ethyl ketone; And ester solvents such as butyl acetate and ethyl cellosolve acetate; and water.

The organic EL element 38 can be manufactured by sequentially forming the anode 40a, the light emitting layer 40c, and the cathode 40b on the base material 10.

The transparent resin filler 16 included in the substrate 10 when the organic EL element 38 is manufactured includes a transparent resin material that is thermosetting and photocured by visible light or a cured product thereof. Therefore, at the time of manufacturing the base material 10, the transparent resin filler 16 can be formed by photocuring the transparent resin material with visible light and then thermosetting. In the case of photocuring the transparent resin material, visible light that is not substantially absorbed by the transparent resin film 12 can be used, so that the transparent resin material can be efficiently photocured. Thereby, since the productivity of the base material 10 improves, the productivity of the organic EL element 38 can also be improved as a result.

When manufacturing the base material 10 which the organic EL element 38 has by the manufacturing method described in the first embodiment, the base material 10 can be efficiently manufactured as described in the first embodiment. As a result, the productivity of the organic EL element 38 is also improved.

Moreover, when the base material 10 is manufactured by the roll-to-roll method as exemplified in the first embodiment, the base material 10 has flexibility, for example. In this case, the organic EL element 38 can also be manufactured by a roll-to-roll method. As a result, the productivity of the organic EL element 38 is further improved.

In the organic EL element 38, an anode 40a is provided in contact with the metal wiring 14 of the substrate 10. Therefore, electric power can be supplied to the anode 40a through the metal wiring 14. Since the metal wiring 14 is formed in a predetermined pattern having a plurality of openings 18, the center of the anode 40a is compared with the case where the openings 18 are not provided or when power is directly supplied to the anode 40a. Electric power can be supplied to the anode 40a while reducing a voltage drop with respect to the (center in the plan view shape of the organic EL element 38) portion. As a result, the luminance uniformity of the light emitted from the organic EL element 38 is improved.

Since the transparent resin filler 16 is disposed (filled or the like) in the plurality of openings 18 in the predetermined pattern exhibited by the metal wiring 14, the surface 10a of the base material 10 (interface with the anode 40a) is smoothed. ing. If the transparent resin filler 16 is not disposed (filled or the like) in the plurality of openings 18, unevenness is generated on the surface of the base material. Such irregularities on the surface of the base material may cause current leakage, which may reduce the light emission efficiency. On the other hand, if the surface 10a of the base material 10 is smoothed, each of the anode 40a, the light emitting layer 40c, and the cathode 40b can be formed with a substantially uniform thickness. Since the light emitting layer 40c formed on the flat anode 40a has no locally thinned portion, current leakage hardly occurs. As a result, the light emission efficiency of the organic EL element 38 can be improved. In particular, in the base material 10 satisfying <Condition 1> and <Condition 2> described in the first embodiment, a flatter surface 10a can be realized, so that the light emission efficiency of the organic EL element 38 is further improved. be able to.

The metal wiring 14 provided on the transparent resin film 12 included in the substrate 10 is formed in a predetermined pattern having a plurality of openings 18, and the openings 18 are filled with a transparent resin filler 16. Therefore, it is possible to extract light from the light emitting layer 40c from the anode 40a side.

Although FIG. 8 shows an example in which only the light emitting layer 40c is provided between the anode 40a and the cathode 40b, a functional layer other than the light emitting layer 40c may be provided between the anode 40a and the cathode 40b. Good. This will be specifically described below.

Examples of layers provided between the cathode 40b and the light emitting layer 40c include an electron injection layer, an electron transport layer, and a hole blocking layer. When both the electron injection layer and the electron transport layer are provided between the cathode 40b and the light emitting layer 40c, the layer in contact with the cathode 40b is referred to as an electron injection layer, and the layers other than the electron injection layer are referred to as an electron transport layer. That's it.

The electron injection layer has a function of improving the efficiency of electron injection from the cathode 40b. The electron transport layer has a function of improving electron injection from the electron transport layer closer to the cathode, the electron injection layer, or the cathode 40b.

The hole blocking layer is a layer having a function of blocking hole transport. When the electron injection layer and / or the electron transport layer have a function of blocking hole transport, these layers may also serve as the hole blocking layer.

Regarding the function of blocking the hole transport by the hole blocking layer, for example, an organic EL element that allows only the hole current to flow can be produced, and the blocking effect can be confirmed by reducing the current value.

Examples of the layer provided between the anode 40a and the light emitting layer 40c include a hole injection layer, a hole transport layer, and an electron block layer. The layer in contact with the anode 40a is referred to as a hole injection layer.

The hole injection layer has a function of improving the hole injection efficiency from the anode 40a. The hole transport layer has a function of improving the hole injection from the anode, the hole injection layer, or the hole transport layer closer to the anode 40a.

The electron block layer has a function of blocking electron transport. When the hole injection layer and / or the hole transport layer has a function of blocking electron transport, these layers may also serve as an electron blocking layer.

Regarding the function of the electron blocking layer blocking electron transport, for example, an organic EL element that allows only electron current to flow can be produced, and the effect of blocking electron transport can be confirmed by a decrease in the measured current value.

In the organic EL element 38, an example of a layer configuration provided on the substrate 10 is shown below.
a) Anode / light emitting layer / cathode b) Anode / hole injection layer / light emitting layer / cathode c) Anode / hole injection layer / light emitting layer / electron injection layer / cathode d) Anode / hole injection layer / light emitting layer / Electron transport layer / electron injection layer / cathode e) Anode / hole injection layer / hole transport layer / light emitting layer / cathode f) Anode / hole injection layer / hole transport layer / light emitting layer / electron injection layer / cathode g ) Anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode h) Anode / light emitting layer / electron injection layer / cathode i) Anode / light emitting layer / electron transport layer / electron injection Layer / Cathode The symbol “/” means that the layers on both sides of the symbol “/” are joined together. The layer configuration of a) corresponds to the layer configuration shown in FIG.

As each material of the hole injection layer, the hole mailing layer, the electron transport layer, and the electron injection layer, known materials can be used. Each of the hole injection layer, the hole mailing layer, the electron transport layer, and the electron injection layer can be formed, for example, by a coating method in the same manner as the light emitting layer.

The organic EL element 38 of the second embodiment may include a single light emitting layer 40c or may include two or more light emitting layers 40c. In any one of the layer configurations of a) to i) above, when the stacked structure disposed between the anode 40a and the cathode 40b is “structural unit A”, an organic layer having two light emitting layers 40c is provided. Examples of the configuration of the EL element include the layer configuration shown in j) below. The layer configuration of two (structural unit A) may be the same or different.
j) Anode / (structural unit A) / charge generation layer / (structural unit A) / cathode

Here, the charge generation layer is a layer that generates holes and electrons by applying an electric field. Examples of the charge generation layer include a thin film made of vanadium oxide, indium tin oxide (abbreviated as ITO), molybdenum oxide, or the like.

Further, assuming that “(structural unit A) / charge generation layer” is “structural unit B”, examples of the configuration of the organic EL element having three or more light emitting layers include the layer configuration shown in the following k). Can do.
k) Anode / (Structural unit B) x / (Structural unit A) / Cathode

Symbol “x” represents an integer of 2 or more, and “(Structural unit B) x” represents a stacked body in which (Structural unit B) is stacked in x stages. Further, a plurality of (structural unit B) layer configurations may be the same or different.

The organic EL element may be configured by directly laminating a plurality of light emitting layers 40c without providing a charge generation layer.

The order of the layers formed on the substrate 10, the number of layers, and the thickness of each layer can be appropriately set in consideration of the light emission efficiency or the lifetime. The organic EL element 38 is usually provided on the substrate 10 with the anode 40a disposed on the substrate 10 side, but may be disposed on the substrate 10 with the cathode 40b disposed on the substrate 10 side. For example, when producing each organic EL element having the layer configurations of a) to k) on the base material 10, in the form in which the anode 40a is disposed on the base material 10 side, the anode 40a side (each of the layer configurations a to k). In the form in which each layer is laminated on the base material 10 in order from the left side and the cathode 40b is arranged on the base material 10 side, each layer is laminated on the base material 10 in order from the cathode 40b (right side of each layer configuration a to k). The organic EL element 38 may be a bottom emission type that emits light from the substrate 10 side, or may be a top emission type that emits light from the side opposite to the substrate 10.

The various embodiments of the present invention have been described above. However, the present invention is not limited to the various embodiments described above, and various modifications can be made without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 10 ... Base material, 12 ... Transparent resin film, 12a ... Front surface, 12b ... Back surface, 14 ... Metal wiring, 16 ... Transparent resin filler, 18 ... Opening part, 38 ... Organic EL element, 40a ... Anode (1st electrode) 40b ... cathode (second electrode), 40c ... light emitting layer.

Claims

A method of manufacturing a base material comprising a transparent resin film, a predetermined pattern of metal wiring having a plurality of openings, and a transparent resin filler,
The metal wiring is formed on the surface of the transparent resin film,
The transparent resin filler is disposed in at least one of the plurality of openings;
A method for producing the substrate comprises:
A resin film forming step of forming a resin film containing a transparent resin material serving as the transparent resin filler on the surface of the transparent resin film on which the metal wiring is formed so as to embed the metal wiring;
After the resin film forming step, a photocuring step of irradiating visible light from the back side of the transparent resin film and photocuring the resin film in the opening,
A development step of removing the resin film on the metal wiring by developing the resin film after the photocuring step;
A thermosetting step of forming the transparent resin filler by removing the resin film on the metal wiring and then thermally curing the resin film remaining on the transparent resin film; and
A method for producing a substrate, wherein the transparent resin material is a transparent resin material that has thermosetting properties and is photocured by visible light.
When the average thickness of the transparent resin filler is T1, and the average thickness of the metal wiring is T2, (T1 / T2) is 0.5 or more and 1.5 or less, and the transparent resin filler When the thickness of the transparent resin filler is T3 and the thickness of the metal wiring is T4, the (T3 / T4) is larger than 0.8 and smaller than 1.2. The manufacturing method of the base material of Claim 1.
The method for manufacturing a base material according to claim 1 or 2, wherein the width of the metal wiring is 10 µm or more.
The method for producing a base material according to any one of claims 1 to 3, wherein an angle formed between a side surface of the metal wiring and the surface of the transparent resin film is 60 ° or more and 100 ° or less.
In the photocuring step, the visible light is irradiated to the transparent resin film as parallel light, and an angle formed between the irradiation direction of the parallel light on the back surface and the normal direction of the back surface is 20 ° or less. The method for producing a substrate according to any one of claims 1 to 4.
The transparent resin material forms a test resin film having the same composition as the resin film, and when the test resin film is photocured with visible light and then developed, the photopolymerized and developed A transparent resin material in which (t2 / t1) is 0.6 or more, where t1 is the thickness of the test resin film before treatment and t2 is the thickness of the test resin film after development. The method for producing a substrate according to any one of claims 1 to 5, wherein:
The resin film absorbs more near infrared light than the transparent resin film,
The heat curing step includes heat-treating the resin film by irradiating the resin film with the near-infrared light from the surface side of the transparent resin film. The manufacturing method of the base material.
The method for producing a substrate according to any one of claims 1 to 7, wherein at least one of the resin film forming step, the photocuring step, the developing step, and the thermosetting step is performed by a roll-to-roll method. .
A base material having a transparent resin film, a predetermined pattern of metal wiring having a plurality of openings, and a transparent resin filler;
A first electrode disposed on the metal wiring of the substrate;
A second electrode disposed on the first electrode;
A light emitting layer disposed between the first electrode and the second electrode,
The metal wiring is formed on the surface of the transparent resin film,
The transparent resin filler is disposed in at least one of the plurality of openings;
The transparent resin filler includes a transparent resin material that is thermosetting and photocured by visible light or a cured product thereof,
An organic EL element in which the light emitting layer contains an organic material.
When the average thickness of the transparent resin filler is T1 and the average thickness of the metal wiring is T2, (T1 / T2) is greater than 0.5 and less than 1.5, and the transparent resin filler When the thickness of the transparent resin filler is T3 and the thickness of the metal wiring is T4, the (T3 / T4) is larger than 0.8 and smaller than 1.2. The organic EL device according to claim 9.