WO2016185549A1 - Matériau de conversion thermoélectrique, élément de conversion thermoélectrique, et module de conversion thermoélectrique les utilisant - Google Patents

Matériau de conversion thermoélectrique, élément de conversion thermoélectrique, et module de conversion thermoélectrique les utilisant Download PDF

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WO2016185549A1
WO2016185549A1 PCT/JP2015/064244 JP2015064244W WO2016185549A1 WO 2016185549 A1 WO2016185549 A1 WO 2016185549A1 JP 2015064244 W JP2015064244 W JP 2015064244W WO 2016185549 A1 WO2016185549 A1 WO 2016185549A1
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thermoelectric conversion
conversion material
group
electrode
material member
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Japanese (ja)
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真 籔内
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株式会社日立製作所
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G41/00—Compounds of tungsten
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N11/00—Generators or motors not provided for elsewhere; Alleged perpetua mobilia obtained by electric or magnetic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen

Definitions

  • the present invention relates to a thermoelectric conversion material, a thermoelectric conversion element, and a thermoelectric conversion module using the same.
  • thermoelectric conversion element has been known for a long time as one of the methods for utilizing the energy of exhaust heat, and Bi2Te3 has been put into practical use as a relatively efficient thermoelectric conversion material at a temperature of 200 ° C. or lower.
  • Bi-Te-based materials have a figure of merit ZT> 1 and high conversion efficiency, but Bi and Te are both expensive, and Te is extremely toxic.
  • a conventional thermoelectric conversion element such as a Bi-Te system cannot be supplied to the market in a large quantity at a low cost and is generally unlikely to be widely spread. For this reason, what can be mass-produced, cost-reduced, and environmental load reduction is calculated
  • Non-Patent Document 1 discloses a thermoelectric conversion material based on a full Heusler alloy Fe2TiSi as a material system having a low environmental load. This is composed of elements with low environmental load and relatively low cost, such as Fe, Ti, Si, etc., and since it has a flat band in the conduction band, it is shown to be a promising material as an n-type thermoelectric material. ing. Full Heusler alloy is a material system that is valuable for industrial applications because it does not use toxic rare metals like Bi-Te materials. Further, Patent Document 1 discloses a thermoelectric conversion material having Fe and S as main components and having a pyrite structure as a material capable of realizing low environmental load and low cost.
  • Patent Document 1 nor Non-Patent Document 1 is a material having a flat band in the valence band. Therefore, a material system that can improve performance as a p-type thermoelectric conversion element with low environmental load and low cost has not yet been obtained. Accordingly, there is a demand for thermoelectric conversion as a thermoelectric conversion material that exhibits higher thermoelectric characteristics than conventional material systems, and that has low environmental load and low cost.
  • an object of the present invention is to obtain a p-type thermoelectric conversion material and a thermoelectric conversion element that can be reduced in environmental load and cost, and can obtain high thermoelectric conversion characteristics.
  • One aspect of the present invention for solving the above problems is at least one element selected from the group consisting of W, Mo and Cr, and at least one element selected from the group consisting of Si, Ge, Sn and C. and elemental beta, including oxygen, has a hexagonal structure of the space group P 6 3 / m, thermoelectric, wherein the volume V per atom is 12.4 ⁇ V ⁇ 13.4 ⁇ 3 It is a conversion material.
  • the hexagonal structure is a W 8 Sn 5 O 23 structure, and part or all of W which is the element ⁇ is substituted with at least one selected from the group consisting of Mo and Cr.
  • a part or all of Sn as the element ⁇ is substituted with at least one selected from the group consisting of Si, Ge, and C.
  • the composition of W 8 Sn 5 O 23 shows a typical ratio. Actually, if the ratio of the atomic percent of ⁇ and ⁇ is within the range of 3: 2 to 4: 3, the effect is close. I can expect.
  • thermoelectric conversion material At least one selected from the group consisting of V, Ti, Zr, Al, Ga, In, Li, Na, Ca, Li, Na and K is added to constitute a p-type thermoelectric conversion material. To do.
  • At least one selected from the group consisting of Cu, Ag, Fe, Mn, Co, Ni, P, As, Sb, and Bi is added to constitute an n-type thermoelectric conversion material.
  • the carrier density is in the range of 1 ⁇ 10 18 to 1 ⁇ 10 21 cm ⁇ 3 , preferably 1 ⁇ 10 19 to 1 ⁇ 10 21 cm ⁇ 3 .
  • the W 8 Sn 5 O 23 structure, W, Mo, Cr, Sn , Si, Ge, and W 8 (1-x) were introduced different elements A, B and C B
  • 8x Sn 5 (1-y) B 5y O 23-z the valence number density (VEC) is controlled.
  • thermoelectric conversion material member includes at least one element ⁇ selected from the group consisting of W, Mo and Cr, at least one element ⁇ selected from the group consisting of Si, Ge, Sn and C, and oxygen, has a hexagonal structure of the space group P 6 3 / m, the volume V per atom is 12.4 ⁇ V ⁇ 13.4 ⁇ 3.
  • the c direction of the main crystallites having a hexagonal crystal structure is oriented, and the orientation direction and the temperature gradient direction are parallel or perpendicular to each other.
  • thermoelectric conversion material member includes at least one element ⁇ selected from the group consisting of W, Mo and Cr, at least one element ⁇ selected from the group consisting of Si, Ge, Sn and C, and oxygen. wherein has a hexagonal structure of the space group P 6 3 / m, the volume V per atom is used a thermoelectric conversion material is 12.4 ⁇ V ⁇ 13.4 ⁇ 3.
  • the thermoelectric conversion element includes a first element in which the thermoelectric conversion material member is p-type and a second element in which the thermoelectric conversion material member is n-type, and the first electrode is a relatively high temperature side of the thermoelectric conversion material member
  • the second electrode is disposed on the relatively low temperature side of the thermoelectric conversion material member, the first electrode of the first element and the first electrode of the second element are connected in series, The second electrode of one element and the second electrode of the second element are connected in series.
  • thermoelectric conversion exhibiting a low environmental load and a low cost and exhibiting high thermoelectric conversion characteristics.
  • notations such as “first”, “second”, and “third” are attached to identify the constituent elements, and do not necessarily limit the number or order.
  • a number for identifying a component is used for each context, and a number used in one context does not necessarily indicate the same configuration in another context. Further, it does not preclude that a component identified by a certain number also functions as a component identified by another number.
  • FIG. 1 shows a crystal structure of W 8 Sn 5 O 23 which is an example of the present invention.
  • the crystal structure shown in FIG. 1 is a hexagonal crystal (space group: P 6 3 / m), and the unit cell contains 72 atoms.
  • W is a transition metal, and physical properties such as a band gap can be controlled by partially substituting W of the same group, such as Mo and Cr.
  • the thermoelectric characteristics can be controlled by partially replacing Sn with C, Si, or Ge of the same family.
  • composition of W 8 Sn 5 O 23 which is an embodiment of the present invention
  • the composition includes at least one element ⁇ selected from the group consisting of oxygen and oxygen, and the ratio of the atomic percent of ⁇ and ⁇ is in the range of 3: 2 to 4: 3. As described above, a part of ⁇ and ⁇ can be replaced within this range.
  • FIG. 2 shows an example of an embodiment of the present invention in which W and Sn are substituted with various elements.
  • FIG. 2 shows W 8 Sn 5 O 23 , W 8 Ge 5 O 23 , W 8 Si 5 O 23 , Mo 8 Sn 5 O 23 , Mo 8 Ge 5 O 23 , and Mo 8 Si 5 obtained by the first principle calculation. It shows the band structure of the O 23. The vertical axis indicates the energy level, and the horizontal axis indicates the position of the k point in the Brillouin Zone.
  • the bands near the top of the valence band of W 8 Sn 5 O 23 , W 8 Ge 5 O 23 , Mo 8 Sn 5 O 23 , and Mo 8 Ge 5 O 23 are from the ⁇ point to the M point.
  • a flat band appears in the direction.
  • Mo 8 Sn 5 O 23 has a flat band in the direction from the ⁇ point to the K point of the conduction band, and both n-type and p-type are high-efficiency thermoelectric conversion materials utilizing the flat band.
  • the energy level is 0. Since a flat band is observed in the vicinity of (Fermi level), thermoelectric characteristics are easily obtained. That is, since the density of states increases, the state occupied when the temperature changes is likely to change, the position of the Fermi level easily moves, and the thermoelectromotive force increases. In addition, these materials have no band in the vicinity of energy level 0 and take a semiconductor electronic state.
  • 3A to 3B show the temperature dependence of the Seebeck coefficient at each hole carrier density obtained by calculation.
  • 3A to 3B show the p-type and n-type, Sxx indicates the Seebeck coefficient in the in-plane direction (direction perpendicular to the c-axis in FIG. 1), and Szz indicates the perpendicular direction (FIG. 3).
  • 1 shows the Seebeck coefficient in the c-axis direction).
  • a high Seebeck coefficient close to 400 ⁇ V / K is exhibited at room temperature at a hole carrier density of 1 ⁇ 10 20 cm ⁇ 3. Further, as shown in FIG.
  • VEC valence number density
  • transition metal elements that have fewer valence electrons than W in the composition of W (8-x) M x Sn 5 O 23 (M is a substituted element) VEC can be changed by replacing W with La, Hf, Ta).
  • FIG. 4 is a diagram showing the relationship between VEC and power factor of W 8 Sn 5 O 23 .
  • a part of W or the like can be replaced with another element to control the positive / negative change amount ⁇ VEC of VEC.
  • Px indicates the power factor in the in-plane direction (direction perpendicular to the c-axis in FIG. 1)
  • Pz indicates the power factor in the perpendicular direction (c-axis direction in FIG. 1).
  • Such VEC control can use transition metal elements such as Zn, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu in addition to the above transition metal elements.
  • W may be replaced with Al, Ga, In, Tl, Zr, Nb, Mo, Ta.
  • VEC can be controlled by substituting Sn as well as W.
  • Elements such as B, Al, Ga, In, N, O, P, As, Sb, Bi, and S, which have a different valence electron number from Sn, can be used.
  • W (8-x) M x Sn (5-y) T y O 23- z of x, y, z is preferably in the range of (0 ⁇ x ⁇ 2,0 ⁇ y ⁇ 2,0 ⁇ z ⁇ 2).
  • thermal conductivity can be reduced in addition to the above VEC control.
  • substitution with heavy elements or light elements having an atomic weight different from W and Sn, which are components of W 8 Sn 5 O 23 as a parent phase, is effective. Therefore, the thermal conductivity can be reduced by substituting Sn with an element such as Sb, Bi, or Ba having an atomic weight larger than that of Sn.
  • the crystal structure of W 8 Sn 5 O 23 is hexagonal, it has anisotropic properties. As shown in FIG. 4, the power factor value varies depending on the direction. When ⁇ VEC> 0, the absolute value of the power factor (Pz) in the c-axis direction is high, and when ⁇ VEC ⁇ 0, it is perpendicular to the c-axis. The absolute value of the power factor (Px) in any direction increases. Therefore, thermoelectric conversion characteristics can be further increased by controlling the orientation in the crystal direction.
  • the c direction of the main crystal microcrystal that is hexagonal is oriented, and when the c axis direction of W 8 Sn 5 O 23 and the temperature gradient direction are parallel, n
  • the performance of the type thermoelectric conversion element can be improved. Further, when the c-axis direction and the temperature gradient direction are perpendicular to each other, the performance as a p-type can be increased.
  • FIG. 5 shows a correspondence table between selectable element valence electrons and elements.
  • elements M and T any element can be selected from the elements described in the table of FIG.
  • x and y are preferably in the range of (0 ⁇ x ⁇ 2, 0 ⁇ y ⁇ 2, ⁇ 2 ⁇ z ⁇ 2).
  • thermoelectromotive force in the thermoelectric conversion element depends on the electronic state of the substance. From the viewpoint of obtaining a high thermoelectromotive force, a material having a sharp change in state density near the Fermi level is preferable. In order to reduce the thermal conductivity, it is desirable that a plurality of elements and heavy elements are included in the crystal structure. From the above viewpoint, in the W 8 Sn 5 O 23 structure system containing the elements ⁇ and ⁇ as main components, for example, element substitution or element doping is performed, the volume per atom is controlled within a predetermined range, and the carrier density Adjust. Thereby, the outstanding thermoelectric conversion characteristic is realizable.
  • the volume per atom is a value obtained by dividing the volume of each crystal lattice by the number of constituent atoms.
  • the lattice constant can be adjusted by substituting some elements of W and Sn in W 8 Sn 5 O 23 .
  • W 8 Sn 5 O 23 by substituting a part of Sn is Group IV element in Ge and W 8 Sn 5-x Ge x O 23 in the crystals (0 ⁇ x ⁇ 5)
  • the volume per atom changes in the range of 12.60 ⁇ 3 to 13.18 ⁇ 3 according to the value of the substitution amount x, and the physical properties thereof change.
  • FIG. 6 is a graph showing the relationship between the volume per atom in the crystal and the power factor.
  • FIG. 6 (A) was replaced with N-type, the Sn 5 of Mo 8 Sn 5 O 23 to Ge 5 (square plots). Also, by substituting Sn 5 of W 8 Sn 5 O 23 to Ge 5, Si 5 (plot circles).
  • FIG. 6 (B) P-type, and replacing the Sn 5 effective image Mo 8 Sn 5 O 23 (square plots). Also, by substituting Sn 5 of W 8 Sn 5 O 23 (plot circles).
  • plotted points was replaced all Sn 5 to one other element, may be substituted Sn 5 at two or more elements may be partially replaced only.
  • N-type from FIG 6 (A) is the power factor with a volume per atom in the crystal is increased also increased, and has a maximum at about 13.20 ⁇ 3.
  • the P type is the maximum at about 12.5 cm 3 . Therefore, both P-type and N-type materials can be adjusted to a material system having extremely excellent thermoelectric conversion in the range of 12.4 to 13.40 cm 3 . From the data in FIG. 6, a significant relationship is recognized between the volume per atom and the power factor.
  • thermoelectric conversion material can be easily confirmed by X-ray diffraction (XRD).
  • XRD X-ray diffraction
  • a lattice image can be observed with an electron microscope such as TEM (TransmissionTransElectron Miroscop) or a single crystal or polycrystal structure can be confirmed from a spot pattern or ring pattern in an electron beam diffraction image.
  • Composition distribution can be confirmed using EPMA (Electron Probe Probe MicroAnalyser) such as EDX (Energy Dispersive X-ray Spectroscopy), SIMS (Secondary Ionization Mass Mass Spectrometer), X-ray photoelectron spectroscopy, ICP (Inductively Coupled Plasma), etc.
  • EPMA Electrodet Probe MicroAnalyser
  • EDX Electronic X
  • SIMS Secondary Ionization Mass Mass Mass Spectrometer
  • ICP Inductively Coupled Plasma
  • Information on the state density of the material can be confirmed by ultraviolet photoelectron spectroscopy or X-ray photoelectron spectroscopy.
  • the electrical conductivity and carrier density can be confirmed by electrical measurement using the four-terminal method and Hall effect measurement.
  • the Seebeck coefficient can be confirmed by giving a temperature difference to both ends of the sample and measuring the voltage difference between both ends.
  • the thermal conductivity can be confirmed by a laser flash method.
  • FIG. 7 shows the result of analyzing the WSnO material which is an example of the present invention by X-ray diffraction. The result reflecting the composition constituted by the above examination is obtained.
  • Example of manufacturing method and measurement> Hereinafter, an example of sample preparation using an embodiment of the present invention will be shown.
  • the manufacturing example is an example, and the manufacturing conditions are not limited thereto.
  • Example preparation example 1 A 99.9% pure WO 2 powder, 99.99% SnO 2 and 99.99% Sn powder and Sb powder were mixed at a composition ratio of 16: 7: 2.9: 0.1, and an alloy was produced by mechanical alloying. Later, when VEC is calculated from the composition of the produced material, 206.05 is obtained.
  • sample preparation example 2 99.9% pure WO 2 powder, 99.99 SnO 2 and 99.99 Sn powder were mixed at a composition ratio of 16: 7: 3, placed in a quartz tube, and heat-treated at 1000 ° C. for 24 hours in a vacuum atmosphere. Thereafter, the sample was pulverized using a ball mill. As a result of X-ray diffraction analysis of the powder sample, a crystal structure peak derived from the W 8 Sn 5 O 23 structure can be observed.
  • Example preparation example 3 99.9% purity WO 2 powder, 99.9% purity MoO 2 powder, 99.99% SnO 2 and 99.99% Sn powder were mixed in a ratio of 15: 1: 7: 3 and put into a quartz tube. Heat treatment was performed in a vacuum atmosphere at 700 ° C. for 24 hours, and then the sample was pulverized using a ball mill. As a result of X-ray diffraction analysis of the powder sample, it was a W 8 Sn 5 O 23 structure. When VEC is calculated from a powder sample of W 7.5 Mo 0.5 Sn 5 O 23 , it is 206.0.
  • Example preparation example 4 W 6 Mo 2 Sn 5 O 23 , W 7 CrSn 5 O 23 , W 7.9 Ti 0.1 Sn 5 O 23 , W 7.9
  • W is partially replaced with Mo, Cr, Ti, Ta. Ta 0.1 Sn 5 O 23 was produced.
  • Example preparation example 5 99.9% pure WO 2 powder, 99.9% pure MoO 2 powder, 99.99% SnO 2 , 99.99% Sn powder and 99.99% Ge powder in a ratio of 15: 1: 7: 2: 1
  • the mixture was mixed, put into a quartz tube, heat-treated in a vacuum atmosphere at 700 ° C. for 24 hours, and then the sample was pulverized using a ball mill.
  • As a result of X-ray diffraction analysis of the powder sample it was a W 8 Sn 5 O 23 structure.
  • VEC is calculated from a powder sample of W 8 Sn 3.33 Ge 1.67 O 23 , it is 206.0.
  • Example preparation example 6 Using a W 8 Sn 5 O 23 target, a thin film with a film thickness of about 300 nm is fabricated on a Si substrate with a thermal oxide film, and heat treatment is performed in a nitrogen atmosphere at 1000 ° C. for 1 hour. It was. As a result of X-ray diffraction analysis of the thin film, a peak of the W 8 Sn 5 O 23 structure was observed.
  • Example measurement example 1 A temperature difference between room temperature and 20 ° C. was made on the samples prepared in Sample Preparation Example 1 and Sample Preparation Example 2, and the Seebeck coefficient was measured. As a result, high Seebeck coefficients of ⁇ 250 V ⁇ / K and 250 ⁇ V / K were obtained, respectively. Therefore, according to this example, it was confirmed that the VEC was changed depending on the doping amount, the Seebeck coefficient could be modulated, and the material system had a high thermoelectromotive force as p-type and n-type. The thermal conductivities were 1.0 W / Km and 0.9 W / Km, respectively.
  • the sample preparation method may be a vacuum evaporation method such as molecular beam epitaxy other than the present embodiment, or chemical vapor deposition.
  • a method for sintering the powder material a discharge plasma sintering method, a hot press method, a hot forge method, or the like may be used.
  • the present embodiment by adding an element having a different valence number by doping and controlling the number of valence electrons of the compound, the number of electrons occupied by the band is changed, the electronic state at the Fermi level is modulated, and high Thermoelectromotive force can be realized.
  • the present embodiment by combining materials that are inexpensive and less likely to be depleted, it is possible to produce a low-cost and non-toxic thermoelectric conversion material.
  • FIG. 8 shows an example in which the material described in the above embodiment is used for the thermoelectric conversion element 100.
  • 104 is the thermoelectric conversion material described in the above embodiment
  • 102a is a high temperature side electrode that is in electrical contact with the thermoelectric conversion material 104
  • 102b is a low temperature side electrode that is in electrical contact with the thermoelectric conversion material 104
  • 120 and 130 are current paths. (The current direction is different depending on whether the thermoelectric conversion material 104 is P-type or N-type).
  • FIG. 9 shows another example in which the material described in the above embodiment is used for the thermoelectric conversion element 200.
  • 103 and 104 are the thermoelectric conversion materials described in the above embodiments, and both P-type (103) and N-type (104) are used.
  • Reference numeral 102c denotes a high temperature side electrode in electrical contact with the thermoelectric conversion material 104
  • reference numerals 102b and 102d denote low temperature side electrodes in electrical contact with the thermoelectric conversion material 104
  • reference numeral 140 denotes a current path.
  • FIG. 10 shows a perspective view of a thermoelectric conversion module 300 configured by connecting a plurality of thermoelectric conversion elements 200 shown in FIG. 9 in series. A part of the upper portion of the housing 101 is cut away so that the inside can be seen. The housing 101 also plays a role of transferring heat to the thermoelectric conversion element 200. The thermoelectric conversion element 200 is in contact with the housing 101 at the upper or lower electrode 102.
  • the present invention is not limited to the above-described embodiment, and includes various modifications.
  • a part of the configuration of one embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of one embodiment.
  • thermoelectric conversion materials that obtain electric power from thermal energy, thermoelectric conversion elements, and thermoelectric conversion modules using the same.
  • thermoelectric conversion element 102a High temperature side electrode 102b: Low temperature side electrode 103: P-type thermoelectric conversion material 104: N-type thermoelectric conversion material

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Abstract

L'invention concerne : un matériau de conversion thermoélectrique qui est caractérisée en ce qu'il contient de l'oxygène, au moins un élément α sélectionné parmi le groupe constitué de W, Mo et Cr, et au moins un élément β sélectionné parmi le groupe constitué de Si, Ge, Sn et C, tout en présentant une structure hexagonale du groupe d'espace P 63/m et un volume pour un atome V satisfaisant 12,4 ≤ V ≤ 13,4 Å3 ; un élément de conversion thermoélectrique utilisant ce matériau de conversion thermoélectrique ; et un module de conversion thermoélectrique utilisant cet élément de conversion thermoélectrique. Par conséquent, la charge environnementale et le coût peuvent être réduits, et une conversion thermoélectrique présentant des caractéristiques de conversion thermoélectrique élevées peut être réalisée.
PCT/JP2015/064244 2015-05-19 2015-05-19 Matériau de conversion thermoélectrique, élément de conversion thermoélectrique, et module de conversion thermoélectrique les utilisant WO2016185549A1 (fr)

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Cited By (3)

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JP2020047811A (ja) * 2018-09-20 2020-03-26 株式会社東芝 半導体装置
CN113016083A (zh) * 2019-03-26 2021-06-22 松下知识产权经营株式会社 热电转换材料和使用它的热电转换元件
CN113812010A (zh) * 2019-09-09 2021-12-17 松下知识产权经营株式会社 热电转换材料、热电转换元件、使用热电转换材料获得电的方法以及输送热的方法

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JP2020047811A (ja) * 2018-09-20 2020-03-26 株式会社東芝 半導体装置
JP7055535B2 (ja) 2018-09-20 2022-04-18 株式会社東芝 半導体装置
CN113016083A (zh) * 2019-03-26 2021-06-22 松下知识产权经营株式会社 热电转换材料和使用它的热电转换元件
CN113812010A (zh) * 2019-09-09 2021-12-17 松下知识产权经营株式会社 热电转换材料、热电转换元件、使用热电转换材料获得电的方法以及输送热的方法

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