WO2016176993A1 - 一种mems麦克风的封装结构 - Google Patents

一种mems麦克风的封装结构 Download PDF

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Publication number
WO2016176993A1
WO2016176993A1 PCT/CN2015/096912 CN2015096912W WO2016176993A1 WO 2016176993 A1 WO2016176993 A1 WO 2016176993A1 CN 2015096912 W CN2015096912 W CN 2015096912W WO 2016176993 A1 WO2016176993 A1 WO 2016176993A1
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Prior art keywords
package
diaphragm
sound
substrate
sound absorbing
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English (en)
French (fr)
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郑国光
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Goertek Inc
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Goertek Inc
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Priority to US15/554,980 priority Critical patent/US10250962B2/en
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
    • H04R2201/003—Mems transducers or their use
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; ELECTRIC HEARING AIDS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor

Definitions

  • the present invention relates to a microphone, and belongs to the field of acoustic-electrical conversion, and more particularly to a package structure of a MEMS microphone.
  • MEMS Micro Electro Mechanical Systems
  • the diaphragm and back plate are important components in MEMS microphones.
  • the diaphragm and back plate form capacitors and are integrated on silicon wafers to realize acoustic electricity. Conversion.
  • the package structure of the MEMS microphone is as shown in FIG. 1.
  • the MEMS chip 3 and the ASIC chip 2 are mounted on the package substrate 1, and the two are connected by wire bonding, and the package case 4 with the sound hole 40 is placed on the package.
  • the MEMS chip 3 includes a substrate 33, a back electrode 32 disposed on the substrate 33, a diaphragm 30, and the like, and the back electrode 32 and the diaphragm 30 form a capacitor structure for acoustic-electric conversion.
  • the diaphragm 30, the substrate 33 and the package substrate 1 together form a back cavity of the MEMS microphone.
  • a plurality of air guiding holes 31 are opened in the diaphragm 30 to realize smooth gas circulation between the front cavity and the back cavity.
  • Figure 2 shows the transmission path of sound waves in a MEMS microphone.
  • the incident acoustic wave enters the front cavity of the MEMS microphone from the sound hole 40 on the package casing, and reaches the MEMS diaphragm, causing the MEMS diaphragm to fluctuate up and down, thereby realizing the detection of sound waves.
  • Most of the direct sound waves reaching the MEMS diaphragm are used to cause the diaphragm to fluctuate.
  • a small part will pass through the air vents on the MEMS diaphragm and enter the back cavity. Since the package substrate is rigid, the sound waves will reflect and act again. On the back of the diaphragm.
  • This reflected sound wave causes the diaphragm displacement to be opposite to the direction in which the direct sound wave causes the diaphragm displacement, thereby offsetting the partial displacement caused by the direct sound wave and reducing the sensitivity of the MEMS diaphragm.
  • the phase is different, which is no different from the noise, and affects the signal-to-noise ratio of the output signal.
  • a package structure of a MEMS microphone comprising a closed inner cavity surrounded by a package housing, and a MEMS chip and an ASIC chip located in the closed inner cavity, the package housing being disposed There is a sound hole for the sound to flow in, the MEMS chip includes a substrate and a diaphragm and a back electrode disposed on the substrate, and the diaphragm divides the closed inner cavity into a front cavity and a back cavity, and the back cavity is in the back cavity A sound absorbing structure is provided.
  • the package housing includes a package substrate and a package housing disposed on the package substrate, the MEMS chip is mounted on the package substrate through a substrate thereof; the diaphragm, the substrate, and the package substrate are collectively enclosed Back cavity.
  • the sound absorbing structure is disposed on a package substrate.
  • the package substrate is provided with a groove, and the sound absorbing structure is disposed in the groove.
  • the sound absorbing structure is disposed on a sidewall of the substrate.
  • the sound absorbing structure is a sound absorbing film layer.
  • the sound absorbing film layer is a polyimide material.
  • the sound absorbing structure is a microplate structure.
  • the microplate structure comprises at least two layers of microporous sound absorbing panels laminated together.
  • the micropores on the at least two layers of microporous sound absorbing plates are staggered.
  • the incident acoustic wave enters the front cavity of the MEMS microphone from the sound hole on the package housing, and the direct sound wave reaching the diaphragm is mostly used to cause the fluctuation of the diaphragm, and a small part passes through the diaphragm.
  • the air guiding hole enters the back cavity and is absorbed by the sound absorbing structure located in the back cavity, so that the sound waves are no longer reflected, thereby eliminating the influence of reflected sound waves on the diaphragm in the back cavity, thereby improving the MEMS microphone. Sensitivity and signal to noise ratio.
  • the inventors of the present invention have found that in the prior art, sound waves incident into the back cavity are reflected and act on the back side of the diaphragm again.
  • the sensitivity of the MEMS diaphragm is reduced, which affects the signal-to-noise ratio of the output signal. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • FIG. 1 is a schematic view of a package structure in the prior art.
  • Figure 2 shows the transmission path of the acoustic wave in the package structure of Figure 1.
  • Figure 3 is a schematic illustration of the package structure of the present invention.
  • Figure 4 shows the transmission path of the acoustic wave in the package structure of Figure 3.
  • Fig. 5 is a schematic view showing another embodiment of the package structure of the present invention.
  • Figure 6 is a schematic illustration of another embodiment of the package structure of the present invention.
  • Figure 7 shows the transmission path of the acoustic wave in the package structure of Figure 6.
  • a package structure of a MEMS microphone provided by the present invention includes a closed inner cavity surrounded by a package housing.
  • the package housing includes Package substrate 1, package housing 4 with sound holes 40, which is mounted with package substrate 1 to form a closed interior cavity of the MEMS microphone.
  • the package housing 4 may be in the form of a flat plate. In this case, a side wall portion is also required to support the package housing 4 on the package substrate 1 to form an external package of the microphone.
  • a MEMS chip 3 located in a closed inner cavity, wherein the MEMS chip 3 is a transducing component that converts a sound signal into an electrical signal, which is fabricated using a MEMS (Micro Electro Mechanical Systems) process.
  • the MEMS chip 3 includes a substrate 33 and a diaphragm 30, a back electrode 32, and the like disposed on the substrate 33.
  • the diaphragm 30 has a certain distance from the back pole 32 such that a capacitor structure is formed therebetween.
  • the MEMS chip 3 can be mounted on the package substrate 1 through its substrate 33.
  • the diaphragm 30 divides the closed inner cavity into a front cavity 5 and a back cavity 6, which is composed of a diaphragm 30 and a substrate 33.
  • the package substrate 1 is enclosed together.
  • the sound hole 40 may also be disposed on the package substrate 1 at a position corresponding to the diaphragm 30 in the MEMS chip 3.
  • the back cavity 6 is surrounded by the diaphragm 30 and the package casing 4. . That is, the back cavity 6 is determined by the position of the sound hole 40.
  • the side of the diaphragm 30 adjacent to the sound hole 40 is the front cavity, and the side away from the sound hole 40 is the back cavity, which is well known to those skilled in the art. Common sense, no longer specified here.
  • the diaphragm 30 After the external sound wave is incident on the diaphragm 30, the diaphragm 30 is driven to fluctuate up and down, thereby realizing the detection of the sound wave.
  • a plurality of air guiding holes 31 are opened in the diaphragm 30 to realize smooth gas circulation between the front cavity 5 and the back cavity 6.
  • the ASIC chip 2 in the present invention is a signal amplifying device and is mainly used to amplify an electrical signal output from the MEMS chip 3 for subsequent processing.
  • the MEMS chip 3 and the ASIC chip 2 may be disposed on the package substrate 1. Of course, for those skilled in the art, it may also be disposed on the package housing 4, which will not be specifically described herein. .
  • a sound absorbing structure is disposed in the back cavity 6.
  • the sound absorbing structure may be a sound absorbing film layer 7, and the sound absorbing film layer 7 may be a sound absorbing material well known to those skilled in the art, such as sound absorbing cotton, polyimide, etc., or other soft. Sexual organic materials and so on.
  • the sound absorbing film layer 7 can be disposed in the back cavity 6 by coating or other means known to those skilled in the art. Referring to FIG. 3, the back cavity 6 is surrounded by the diaphragm 30, the substrate 33, and the package substrate 1. At this time, the sound absorbing film layer 7 may be coated on the surface of the package substrate 1 at a corresponding position.
  • a recess is provided on the package substrate 1.
  • the sound absorbing film layer 7 is disposed in the groove.
  • a groove may be etched on the package substrate 1, and then the sound absorbing film layer 7 is deposited therein, so that the thickness of the sound absorbing film layer 7 can be increased, and the sound absorbing effect can be improved without reducing The volume of the back chamber 6.
  • the sound absorbing film layer 7 can also be disposed on the side walls of the substrate 33 simultaneously or separately.
  • Figure 4 shows the transmission path of sound waves in the MEMS microphone.
  • the incident sound waves enter the front cavity of the MEMS microphone from the sound holes on the package housing.
  • the direct sound waves reaching the diaphragm are mostly used to cause the fluctuation of the diaphragm, and the other is very small.
  • a part passes through the air guiding hole on the diaphragm, enters the back cavity of the MEMS microphone, and is absorbed by the sound absorbing structure located in the back cavity, so that the sound waves are no longer reflected, thereby eliminating the reflected sound wave in the back cavity.
  • the impact which in turn increases the sensitivity and signal-to-noise ratio of MEMS microphones.
  • the sound absorbing structure is a microplate structure 8. After the sound waves are incident on the micropores of the microplate structure 8, a plurality of reflections are performed, and only a small part of the sound waves can be reflected again. The intensity of the reflected sound waves in the back cavity is greatly reduced, see Figure 7.
  • the microplate structure 8 comprises at least two layers of microporous sound absorbing panels laminated together.
  • a two-layer microporous sound absorbing panel is provided.
  • the first microporous sound absorbing panel 80 and the second microporous sound absorbing panel 81 are respectively laminated, and the two microporous sound absorbing panels 80 and 81 are laminated together, wherein the two microporous sound absorbing panels are laminated.
  • the micropores may be arranged in a right or staggered distribution, so that the intensity of the emitted sound waves can be further reduced.
  • the two microporous sound absorbing panels 80, 81 may be formed in the structure of the package substrate 1. For example, when the package substrate 1 is fabricated by a lamination process, micropores are preliminarily placed on corresponding positions on the two of the sheets, and then laminated. In the package substrate 1.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)
  • Details Of Audible-Bandwidth Transducers (AREA)

Abstract

一种MEMS麦克风的封装结构，包括由封装壳体围成的封闭内腔，以及位于封闭内腔中的MEMS芯片（3）、ASIC芯片（2），所述封装壳体上设置有供声音流入的声孔（10），所述MEMS芯片（3）包括衬底（33）以及设置在衬底（33）上的振膜（30）、背极（32），所述振膜（30）将封闭内腔分为前腔（5）、背腔（6），在所述背腔（6）内设置有吸音结构。入射声波自封装壳体上的声孔进入MEMS麦克风的前腔（5），到达振膜（30）的直达声波大部分用来引起振膜（30）的波动，另外很小一部分穿过振膜（30）上的导气孔（31），进入到背腔（6），并被位于背腔（6）中的吸音结构吸收掉，使得这些声波不会再发生反射，从而消除了背腔（6）中反射声波对振膜（30）的影响，进而提升了MEMS麦克风的灵敏度和信噪比。

Description

一种MEMS麦克风的封装结构 技术领域
本发明涉及一种麦克风，属于声电转换领域，更具体地，涉及一种MEMS麦克风的封装结构。
背景技术
MEMS(微型机电系统)麦克风是基于MEMS技术制造的麦克风，其中的振膜、背极板是MEMS麦克风中的重要部件，振膜、背极板构成了电容器并集成在硅晶片上，实现声电的转换。
MEMS麦克风的封装结构如图1所示，MEMS芯片3和ASIC芯片2贴装在封装基板1上，通过打线将二者连接在一起，再将带有声孔40的封装外壳4贴装在封装基板1上，形成MEMS麦克风的前腔。其中，MEMS芯片3包括衬底33以及设置在衬底33上的背极32、振膜30等，背极32和振膜30形成了声电转换的电容结构。振膜30、衬底33与封装基板1共同形成了MEMS麦克风的背腔。为了保证MEMS前腔和背腔的气压平衡，会在振膜30上开出若干导气孔31，以实现前腔和背腔之间气体顺畅流通。
图2示出了声波在MEMS麦克风中的传输路径。首先，入射声波自封装外壳上的声孔40，进入MEMS麦克风的前腔，到达MEMS振膜，引起MEMS振膜上下波动，从而实现对声波的检测。到达MEMS振膜的直达声波大部分用来引起振膜的波动，另外很小一部分会穿过MEMS振膜上的导气孔，进入背腔，由于封装基板是刚性的，声波会发生反射，再次作用在振膜的背面。这种反射声波引起振膜位移与直达声波引起振膜位移的方向是相反的，从而会抵消直达声波所带来的部分位移，降低了MEMS振膜的灵敏度。并且，作用在振膜正面的直达声波和作用在振膜背面的反射声波存在时间差，即相位不同，其与噪声无异，影响输出信号的信噪比。
发明内容
本发明的一个目的是提供一种MEMS麦克风的封装结构的新技术方案。
根据本发明的第一方面，提供了一种MEMS麦克风的封装结构，包括由封装壳体围成的封闭内腔，以及位于封闭内腔中的MEMS芯片、ASIC芯片，所述封装壳体上设置有供声音流入的声孔，所述MEMS芯片包括衬底以及设置在衬底上的振膜、背极，所述振膜将封闭内腔分为前腔、背腔，在所述背腔内设置有吸音结构。
优选地，所述封装壳体包括封装基板以及设置在封装基板上的封装外壳，所述MEMS芯片通过其衬底安装在所述封装基板上；所述振膜、衬底、封装基板共同围成背腔。
优选地，所述吸音结构设置在封装基板上。
优选地，所述封装基板上设置有凹槽，所述吸音结构设置在该凹槽中。
优选地，所述吸音结构设置在衬底的侧壁上。
优选地，所述吸音结构为吸音薄膜层。
优选地，所述吸音薄膜层为聚酰亚胺材料。
优选地，所述吸音结构为微孔板结构。
优选地，所述微孔板结构包括至少两层层压在一起的微孔吸声板。
优选地，所述至少两层微孔吸声板上的微孔错开分布。
本发明MEMS麦克风的封装结构，入射声波自封装壳体上的声孔进入MEMS麦克风的前腔，到达振膜的直达声波大部分用来引起振膜的波动，另外很小一部分穿过振膜上的导气孔，进入到背腔，并被位于背腔中的吸音结构吸收掉，使得这些声波不会再发生反射，从而消除了背腔中反射声波对振膜的影响，进而提升了MEMS麦克风的灵敏度和信噪比。
本发明的发明人发现，在现有技术中，入射至背腔中的声波会发生反射，再次作用在振膜的背面。降低了MEMS振膜的灵敏度，影响了输出信号的信噪比。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其 它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是现有技术中封装结构的示意图。
图2示出了声波在图1中封装结构中的传输路径。
图3是本发明封装结构的示意图。
图4示出了声波在图3中封装结构中的传输路径。
图5是本发明封装结构另一种实施结构的示意图。
图6是本发明封装结构另一种实施结构的示意图。
图7示出了声波在图6中封装结构中的传输路径。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
参考图3，本发明提供的一种MEMS麦克风的封装结构，包括由封装壳体围成的封闭内腔，在本发明一个具体的实施方式中，所述封装壳体包括 封装基板1、带有声孔40的封装外壳4，所述封装外壳4与封装基板1贴装在一起，形成了MEMS麦克风的封闭内腔。其中，该封装外壳4可以呈平板状，此时，还需要设置一侧壁部将封装外壳4支撑在封装基板1上，共同形成麦克风的外部封装。
还包括位于封闭内腔中的MEMS芯片3、ASIC芯片2，其中，MEMS芯片3为将声音信号转化为电信号的换能部件，其采用MEMS(微机电系统)工艺制作。MEMS芯片3包括衬底33以及设置在衬底33上的振膜30、背极32等部件。振膜30与背极32之间具有一定的距离，使得二者之间构成一电容器结构。该MEMS芯片3可通过其衬底33安装在封装基板1，此时，所述振膜30将封闭内腔分为前腔5、背腔6，该背腔6由振膜30、衬底33、封装基板1共同围成。在本发明另一实施例中，声孔40也可以设置在封装基板1上与MEMS芯片3中振膜30对应的位置，该种情况下，背腔6由振膜30、封装外壳4围成。也就是说，背腔6是由声孔40的位置决定的，振膜30邻近声孔40的一侧为前腔，远离声孔40的一侧为背腔，这属于本领域技术人员的公知常识，在此不再具体说明。
外界的声波入射至振膜30上后，驱动振膜30上下波动，从而实现对声波的检测。为了保证MEMS前腔5和背腔6的气压平衡，在振膜30上开出若干导气孔31，以实现前腔5和背腔6之间气体顺畅流通。
本发明中的ASIC芯片2为信号放大器件，主要用来将MEMS芯片3输出的电信号进行放大，以便后续处理。本发明中，所述MEMS芯片3和ASIC芯片2都可以设置在封装基板1上，当然，对于本领域的技术人员来说，其也可以选择设置在封装外壳4上，在此不再具体说明。
本发明的封装结构，在所述背腔6内设置有吸音结构。在本发明一个具体的实施方式中，该吸音结构可以是吸音薄膜层7，该吸音薄膜层7可以采用本领域技术人员所熟知的吸音材料，例如吸音棉、聚酰亚胺等，或其它软性的有机物材料等等。可以通过涂覆或本领域技术人员所公知的其它方式将吸音薄膜层7设置在背腔6中。参考图3，背腔6由振膜30、衬底33、封装基板1围成，此时，该吸音薄膜层7可以涂覆在封装基板1相应位置的表面上。优选的是，参考图5，在封装基板1上设置有凹槽，所 述吸音薄膜层7设置在该凹槽中。在制作的时候，可以在封装基板1上刻蚀出一个凹槽，然后将吸音薄膜层7沉积到其中，这样，既可以增加吸音薄膜层7的厚度，提升吸声效果，又不会减小背腔6的体积。当然，吸音薄膜层7也可以同时或单独设置在衬底33的侧壁上。
图4示出了声波在MEMS麦克风中的传输路径，入射声波自封装壳体上的声孔进入MEMS麦克风的前腔，到达振膜的直达声波大部分用来引起振膜的波动，另外很小一部分穿过振膜上的导气孔，进入到MEMS麦克风的背腔，并被位于背腔中的吸音结构吸收掉，使得这些声波不会再发生反射，从而消除了背腔中反射声波对振膜的影响，进而提升了MEMS麦克风的灵敏度和信噪比。
在本发明另一实施结构中，所述吸音结构为微孔板结构8，声波入射到微孔板结构8的微孔后，会经过多次反射，只有很少一部分声波可以再反射出来，从而大大降低了背腔内反射声波的强度，参考图7。
在本发明一个具体的实施方式中，所述微孔板结构8包括至少两层层压在一起的微孔吸声板，参考图6，为了便于描述，以设置两层微孔吸声板为例，分别记为第一微孔吸声板80、第二微孔吸声板81，两块微孔吸声板80、81层压在一起，其中，该两层微孔吸声板上的微孔可以正对设置，也可以错开分布，从而可以进一步降低发射声波的强度。该两块微孔吸声板80、81可以形成在封装基板1的结构中，例如在以层叠的工艺制作封装基板1时，在其中两块板材上相应的位置预先打上微孔，之后层压在封装基板1中。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种MEMS麦克风的封装结构，其特征在于：包括由封装壳体围成的封闭内腔，以及位于封闭内腔中的MEMS芯片(3)、ASIC芯片(2)，所述封装壳体上设置有供声音流入的声孔(40)，所述MEMS芯片(3)包括衬底(33)以及设置在衬底(33)上的振膜(30)、背极(32)，所述振膜(30)将封闭内腔分为前腔(5)、背腔(6)，在所述背腔(6)内设置有吸音结构。
  2. 根据权利要求1所述的封装结构，其特征在于：所述封装壳体包括封装基板(1)以及设置在封装基板(1)上的封装外壳(4)，所述MEMS芯片(3)通过其衬底(33)安装在所述封装基板(1)上；所述振膜(30)、衬底(33)、封装基板(1)共同围成背腔(6)。
  3. 根据权利要求2所述的封装结构，其特征在于：所述吸音结构设置在封装基板(1)上。
  4. 根据权利要求2所述的封装结构，其特征在于：所述封装基板(1)上设置有凹槽，所述吸音结构设置在该凹槽中。
  5. 根据权利要求2、3或4所述的封装结构，其特征在于：所述吸音结构设置在衬底(33)的侧壁上。
  6. 根据权利要求5所述的封装结构，其特征在于：所述吸音结构为吸音薄膜层(7)。
  7. 根据权利要求6所述的封装结构，其特征在于：所述吸音薄膜层(7)为聚酰亚胺材料。
  8. 根据权利要求5所述的封装结构，其特征在于：所述吸音结构为微孔板结构(8)。
  9. 根据权利要求8所述的封装结构，其特征在于：所述微孔板结构(8)包括至少两层层压在一起的微孔吸声板(80、81)。
  10. 根据权利要求9所述的封装结构，其特征在于：所述至少两层微孔吸声板(80、81)上的微孔错开分布。
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