WO2016175488A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2016175488A1
WO2016175488A1 PCT/KR2016/004024 KR2016004024W WO2016175488A1 WO 2016175488 A1 WO2016175488 A1 WO 2016175488A1 KR 2016004024 W KR2016004024 W KR 2016004024W WO 2016175488 A1 WO2016175488 A1 WO 2016175488A1
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WIPO (PCT)
Prior art keywords
gas
gas injector
injector
purge gas
purge
Prior art date
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PCT/KR2016/004024
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English (en)
Korean (ko)
Inventor
한태성
강대봉
곽재찬
김가람
김두영
서동원
이상두
이성광
조병하
천동석
황철주
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020160046041A external-priority patent/KR102487805B1/ko
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to CN201680024250.6A priority Critical patent/CN107567509A/zh
Priority to US15/570,324 priority patent/US20180130674A1/en
Publication of WO2016175488A1 publication Critical patent/WO2016175488A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using one or more gas injectors to form a thin film on a substrate.
  • a semiconductor device In order to manufacture a solar cell, a semiconductor device, a flat panel display, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a surface of a substrate.
  • Semiconductor manufacturing processes such as a thin film deposition process, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.
  • Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimal environment for a corresponding process, and in recent years, a substrate processing apparatus for performing a deposition or etching process using plasma has been widely used.
  • the substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, and a plasma etching apparatus for etching and patterning a thin film.
  • PECVD plasma enhanced chemical vapor deposition
  • plasma etching apparatus for etching and patterning a thin film.
  • the present invention relates to a substrate processing apparatus and a substrate processing method, and to provide a substrate processing apparatus and a substrate processing method suitable for forming a uniform and dense thin film on the ultra-fine pattern formed on the substrate.
  • a substrate processing apparatus includes a chamber; A susceptor positioned below the chamber and having at least one substrate placed therein; A chamber lead positioned above the susceptor; A first source gas injector installed in the chamber lid to inject a source gas; A second source gas injector installed in the chamber lid to inject a source gas; A first purge gas injector installed in the chamber lid to inject a purge gas; And the purge gas injector may be installed between the first and second source gas injectors.
  • the source gas may include any one of Si-containing gas, Ti-containing precursor, Zr, Al, Hf, and Ta.
  • the first source gas injector, the second source gas injector, and the first purge gas injector installed in the chamber lid are radially installed in an outward direction with respect to the center of the chamber lead. Can be.
  • the distance between the center of the first source gas injector and the first purge gas injector provided in the chamber lid is the distance between the outer portion of the first source gas injector and the first purge gas injector. Can be shorter.
  • the substrate processing apparatus may further include a second purge gas injector and a third purge gas injector installed in the chamber lid to inject the purge gas.
  • the second purge gas injector or the third purge gas injector region may be wider than the first purge gas injector.
  • the gas injection flow rate of the second purge gas injector or the third purge gas injector may be higher than that of the first purge gas injector.
  • the substrate processing apparatus may further include a plurality of reaction gas injectors installed in the chamber leads to inject the reaction gas.
  • the reaction gas may include a nitrogen-containing gas or an oxygen-containing gas.
  • the substrate processing apparatus may include a plasma electrode in the reactive gas injector.
  • a substrate processing method includes a first step of mounting at least one substrate on a substrate support provided in the chamber; A second step of injecting a source gas through a first source gas injector provided on the substrate; A third step of injecting purge gas through a first purge gas injector provided on the substrate; And a fourth step of injecting the source gas through a second source gas injector installed on the substrate, wherein the substrate may sequentially perform the processes of the second, third, and fourth steps. have.
  • the source gas may include any one of Si-containing gas, Ti-containing precursor, Zr, Al, Hf, and Ta.
  • the substrate processing method according to the present invention may further include a fifth step of injecting a plurality of reaction gases installed in the chamber lid to inject the reaction gases.
  • the reaction gas may include a nitrogen-containing gas or an oxygen-containing gas.
  • the substrate processing method according to the present invention may include generating plasma or radical injection in the reactive gas injector.
  • the substrate processing method according to the present invention may further include a second purge gas injector and a third purge gas injector installed in the chamber lid to inject the purge gas.
  • the second purge gas injector or the third purge gas injector region may be wider than the first purge gas injector.
  • the gas injection flow rate of the second purge gas injector or the third purge gas injector may be higher than that of the first purge gas injector.
  • the substrate processing apparatus of the present invention may include a plurality of source gas injectors or a plurality of reactive gas injectors to form a uniform thin film on and inside the pattern on a substrate on which a complex and high aspect ratio pattern is formed.
  • the substrate processing apparatus of the present invention includes a plurality of purge gas injectors, and appropriately purges (removes) source gas remaining in and inside the pattern on the substrate on which the complex and high aspect ratio pattern is formed, thereby allowing the inside of the pattern. And a uniform thin film on the top.
  • the substrate processing apparatus of the present invention includes a plurality of source gas injectors or a plurality of reactive gas injectors, so that the adsorption of the source gas is sufficiently performed on the surface of the substrate, or the reaction of the source gas and the reactive gas on the substrate surface is sufficiently performed. By doing so, it is possible to improve the film quality of the deposited thin film.
  • the substrate processing apparatus of the present invention is a thin film deposited by forming a thin film on the surface of the substrate, or by surface treatment of the thin film formed on the substrate surface by forming a plasma electrode to the gas injector or sprayed activated radicals through the gas injector It can improve the film quality.
  • the substrate processing apparatus of the present invention by using a gas injector for deposition and a gas injector constituting part or all of the plasma electrode, by repeating the surface treatment by plasma after the deposition process or deposition on the substrate, The film quality of the thin film deposited on the substrate can be improved.
  • the substrate processing apparatus of the present invention uses a gas injector for the deposition and a gas injector constituting part or all of the plasma electrode, by spraying the gas activated by the plasma after the deposition process or deposition on the substrate By repeating deposition and surface treatment on the substrate, the film quality of the thin film deposited on the substrate can be improved.
  • the substrate processing apparatus of the present invention is to form a plasma electrode in the gas injector or to activate the radicals through the gas injector separately from the gas injector for deposition, to include impurities in the injected gas in the deposition or surface treatment process
  • impurities to be injected into the thin film formed on the substrate, the film quality of the deposited thin film can be improved.
  • the substrate processing apparatus of the present invention includes a plurality of source gas injectors or a plurality of reactive gas injectors, so that the adsorption of the source gas is sufficiently performed on the surface of the substrate, or the reaction of the source gas and the reactive gas on the substrate surface is sufficiently performed.
  • the atomic layer deposition which is realized by the rotation of the gas injector or the rotation of the substrate stabilizer, such a device realizes one rotation of one atomic layer deposition, and the shortage of gas supply or reaction time according to the increase of the rotational speed.
  • the deposition rate of the thin film can be improved while improving the film quality of the thin film deposited by offsetting the shortage.
  • the substrate processing apparatus of the present invention includes a plurality of source gas injectors, a plurality of reactive gas injectors, or a gas injector or radical injector including at least one plasma electrode, and the metal precursor or silicon-containing gas through the plurality of gas injectors.
  • a plurality of source gas injectors By spraying or by injecting an oxygen-containing gas or nitrogen-containing gas through the plurality of reaction gas injector to improve the film quality of the deposited film.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view in which a plurality of substrates are placed on the susceptor of FIG. 1.
  • FIG. 3 is a schematic cross-sectional view of the chamber lid and the plurality of gas injectors of FIG.
  • FIG. 4 is a vertical schematic cross-sectional view of the gas injector of FIG. 1.
  • FIG. 5 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a second embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a third embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view of the chamber lid and the plurality of gas injectors of FIG. 6.
  • FIG. 8 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a fourth embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a fifth embodiment of the present invention.
  • the substrate processing apparatus 1 constitutes a cross section of AA ′ of FIG. 4, and a susceptor (disk) 3 is disposed below the chamber 2. It is located, one or more substrates 100 may be placed on the susceptor (3).
  • the chamber lead 4 is positioned above the susceptor 3, that is, the upper part of the chamber 2, and the plurality of purge gas injection holes, the plurality of reaction gas injection holes, and the plurality of source gas injection holes are installed in the chamber lead 4. It is possible to have a structure in which two gas injectors 5 are inserted.
  • One side of the chamber 2 may be provided with a substrate entrance 21 through which the substrate 100 can enter and exit, and an exhaust port (not shown) may be installed at one side and a lower portion of the chamber 2.
  • the substrate processing apparatus 1 of FIG. 1 of the present invention may place a plurality of substrates 100 on the susceptor 3. As shown in FIG. 1, six substrates 100 may be placed in a concentric circle on one susceptor 3. When the plurality of substrates 100 may be positioned at equal intervals or at predetermined intervals, the susceptor 3 may be configured in plurality in correspondence with the number of the plurality of substrates 100. In addition, the susceptor 3 may rotate based on the center of the susceptor 3. Accordingly, the plurality of substrates 100 placed on the susceptor 3 may rotate based on the center of the susceptor 3 or the center of rotation.
  • one or more gas inlets 51 may be installed in the gas injector 5, and a plurality of injection holes 52 may be installed.
  • the gas inlet 51 may be injected from the top, side, and diagonal directions of the gas injector 5.
  • There is a hollow area in the gas injector 5 so that the space 53 is located between the injection hole 52 and the gas inlet 51 so that the gas can be uniformly injected so that the gas is injected into the injection hole 52.
  • the gas introduced from the gas inlet 51 may be injected into the injection hole 52 after the gas is filled in the space 53.
  • the plurality of gas injectors 5 may be positioned radially or at the center purge with respect to the chamber lead 4. At least one or more of the plurality of gas injectors 5 may be formed by forming at least one row of injection holes 52 in a radial direction from the center of the chamber lead 4. Alternatively, at least one of the plurality of gas injectors 5 may include a shower head-type gas injector 5 in which a plurality of injection holes 52 are formed from the chamber lead 4 to the substrate 100 on the susceptor 3. Can be).
  • the plurality of gas injectors 5 may be embedded in the chamber leads 4, may form openings in the chamber leads 4, and respective gas injectors 5 may be inserted into the openings, and the chamber leads 4 may be inserted into the chamber leads 4. ), Each gas injector 5 may be inserted into the recess.
  • the process sequence of the substrate processing apparatus 1 including the chamber chamber lead 4 and the plurality of gas injectors 5 according to an embodiment of the present invention is based on the first source gas injector S1.
  • 1 Thin film deposition using a deposition cycle consisting of a purge gas injector P1 ⁇ a second source gas injector S2 ⁇ a second purge gas injector P2 ⁇ a reactive gas injector R ⁇ a third purge gas injector P3 Device and thin film deposition method.
  • the order of the deposition cycle according to the present embodiment may be the above method, or the process may be performed in the order of the deposition cycle in the opposite direction.
  • a plurality of source gas injectors S1 and S2 are disposed as a device for realizing a substrate processing process according to a first embodiment of the present invention, and thus, a plurality of source gas injectors may be performed in one cycle or one rotation.
  • (S1, S2) may be made of a gas injection device, characterized in that the substrate 100 passes.
  • the distance between the source gas injectors S1 and S2 and the purge gas injectors P1, P2 and P3 may be smaller than the distance between the reaction gas injector R and the purge gas injectors P1, P2 and P3. have.
  • the supplied first source gas and the second source gas may include the same gas.
  • the first source gas and the second source gas may not have the same flow rate or flow rate ratio.
  • a source gas of the substrate treating process according to the first embodiment of the present invention may include a metal precursor, and the reactant gas may be a nitride gas or an oxidizing gas. It may include, the purge gas (Purge gas) may include a non-reactive gas.
  • the source gas may include a Ti-containing precursor, and the reaction gas may include an N-containing gas.
  • the source gas may include a Zr (or Al, Hf, Ta, ..., etc.) containing precursor, the reaction gas may include an oxygen (oxygen, O) containing gas.
  • the source gas of the substrate treating process according to the first embodiment of the present invention may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may include nitriding gas or oxidizing gas.
  • the purge gas may include a non-reactive gas, and specifically, the source gas may include a Si containing gas, and the reactant gas may include nitrogen (Nitrogen, N) or oxygen (oxygen, O) containing gas. can do.
  • the source gas in the source gas injector S1 may include a metal precursor (Ti-containing precursor).
  • the source gas may include Zr (or Al, Hf, Ta, ).
  • the source gas injected from the source gas injector S1 may be subjected to a first source gas process injected to the plurality of substrates.
  • the source gas is injected by the source gas injector S1, and the purge gas is injected by the purge gas injector P1.
  • the purge gas injected from the purge gas injector P1 may remove (purge) a portion of the source gas injected from the source gas injector S1.
  • the purge gas injector P1 and the lower surface of the pattern and the pattern side of the substrate may be relatively less film than the upper portion of the pattern.
  • the source gas may be injected again through the source gas injector S2, and a second source gas injection process may be performed on the substrate.
  • the source gas may include a metal precursor (Ti-containing precursor).
  • the source gas may include Zr (or Al, Hf, Ta, ).
  • step coverage may be improved when the film is uniformly deposited on the upper side of the pattern, the lower side of the pattern, and the side surfaces between the upper side and the lower side of the pattern. . Since the height of the film on the top, bottom, and side of the pattern of the substrate is uniform, the film may be filled up to the bottom of the substrate, so that a uniform film may be deposited between the wafer patterns, so that the operation of the semiconductor device may operate without abnormality. have.
  • a first step of mounting at least one substrate on a substrate support provided in the chamber may be performed.
  • a second step of injecting the source gas may be performed through the first source gas injector S1 installed on the substrate 100.
  • a third step of spraying the purge gas may be performed through the purge gas injector P1 provided on the substrate.
  • a fourth step of injecting the source gas through the second source gas injector S2 provided on the substrate may be performed.
  • the substrate may sequentially perform the second, third and fourth processes. Through the sequential progress of the process, a uniform film may be uniformly deposited on the top, side, and bottom of the wafer pattern.
  • the source gas of this process may be a gas containing Ti.
  • the source gas flow rate injected from the first source gas injector and the source gas flow rate injected from the second source gas injector may be the same or may be different.
  • the first source gas injector S1, the second source gas injector S2, and the first purge gas injector P1 including a plurality of gas injectors 5 installed in the chamber lid 4.
  • the distance between the center of the first source gas injector and the first purge gas injector is greater than the distance between the outer parts of the chamber lid 4, that is, the edge part is the outer part. It can be short. In contrast, the distance near the edges, i.e., the edges, may be longer than the distance between the centers. In addition, the shorter (closer) distance between the gas injectors 5 may be expressed by the distance between the gas injectors 5 being narrower, and the longer (far) distance between the gas injectors 5 being wider. I can express it.
  • the process sequence of the substrate processing apparatus 1 including the chamber lead 4 and the plurality of gas injectors 5 is the first source gas injector S1 ⁇ first.
  • Thin film deposition apparatus using a deposition cycle consisting of a purge gas injector (P1) ⁇ a second source gas injector (S2) ⁇ a second purge gas injector (P2) ⁇ a reactive gas injector (R) ⁇ a third purge gas injector (P3) And a thin film deposition method.
  • the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 of the second purge gas injector P2 or the third purge gas injector P3 The gas injection region may be wider, and the second purge gas injector P2 may be larger than the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 in the thin film deposition apparatus.
  • the gas injection flow rate of the third purge gas injector P3 may be higher than that of the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 in the thin film deposition apparatus.
  • the number of gas injection holes of the second purge gas injector P2 or the third purge gas injector P3 may be higher.
  • the gas injection region of the reaction gas injector R may be wider than the first source gas injector S1 or the second source gas injector S2, and the first source gas injector S1 or the second source gas injector S2 may be larger.
  • the gas injection flow rate of the reaction gas injector R may be higher than that of the reaction gas injector R, and the number of the gas injection holes of the reaction gas injector R may be greater than that of the first source gas injector S1 or the second source gas injector S2. It may be a device.
  • the first purge gas injector P1 is formed between the first source gas injector S1 and the second source gas injector S2 positioned between the second purge gas injector P2 or the third purge gas injector P3. The distance may be closer.
  • the depositing of the substrate on which the pattern is formed by the substrate processing apparatus 1 may include purging the first source gas injector S1 ⁇ the upper pattern gas. ⁇ a second source gas injector S2 ⁇ purging the upper part of the pattern and the inside of the pattern (Large purge) ⁇ a reactive gas injector R ⁇ purging the upper part of the pattern and the inside of the pattern.
  • the step of injecting the Ti-containing gas into and above the pattern ⁇ the step of purging the upper gas of the pattern or the step of not sufficiently removing the Ti gas in the pattern ⁇ the step of injecting the Ti-containing gas into and above the pattern ⁇ pattern Purging the upper part and the inside of the pattern ⁇ spraying the N-containing gas into the upper part and the upper part of the pattern ⁇ may purge the upper part and the inside of the pattern.
  • the substrate processing apparatus 1 may include a first source gas injector S1 ⁇ a first purge gas injector P1 ⁇ a second source gas injector S2 ⁇ a second source gas injector S1.
  • a deposition cycle consisting of purge gas injector (P2) ⁇ first reaction gas injector (R1) ⁇ third purge gas injector (P3) ⁇ second reaction gas injector (R2) ⁇ fourth purge gas injector (P4) Deposition method.
  • a plurality of reaction gas injectors R1 and R2 of an apparatus for realizing a substrate processing apparatus 1 are disposed, and a plurality of reactions are performed in one cycle or one rotation.
  • the substrate 100 may pass through the gas injectors R1 and R2. Further, the interval between the first reactive gas injector R1 and the second reactive gas injector R2 is smaller than the interval between the first reactive gas injector R1 and the second purge gas injector P2. I can (narrowly) do it. Alternatively, the interval between the first reactive gas injector R1 and the second reactive gas injector R2 is smaller than the interval between the second reactive gas injector R2 and the fourth purge gas injector P4. I can (narrowly) do it.
  • first reactive gas injector R1 and the second reactive gas injector R2 may include the same gas.
  • the flow rate or the flow rate ratio of the first reaction gas injector R1 and the second reaction gas injector R2 may not be the same.
  • the source gas of the apparatus for realizing the substrate processing apparatus 1 may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas. (N-containing gas) may be included.
  • the source gas may include a Zr (or Al, Hf, Ta, ...) containing precursor, and the reaction gas may include an O-containing gas.
  • the source gas may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may be nitrided. Gas or oxidizing gas may be included and the purge gas may comprise a non-reactive gas.
  • the source gas may include Si-containing gas, and the reaction gas may include N or O-containing gas.
  • an RF power source / RF matcher 6 may be connected to the source gas injector or the reactive gas injector.
  • the RF power source / RF matcher 6 may be used to generate plasma in some of the reaction spaces inside the chamber 2.
  • the substrate processing apparatus may include a first source gas injector S1 ⁇ a first purge gas injector P1 ⁇ a second source gas injector S2 ⁇ a second purge gas injector (P2) ⁇ a first reactive gas injector R1 ⁇ a third purge fraud injector P3 ⁇ a second plasma reactive gas injector R2, a plasma electrode or radical injection ⁇ a deposition consisting of a fourth purge gas injector P4
  • the first reactive gas injector R1 or the second reactive gas injector R2 may be provided with a plasma electrode or spray radicals.
  • the substrate processing apparatus 1 may include a plurality of reactive gas injectors R1 and R2, and may include a plurality of reactive gas injectors R1 and one cycle or one rotation.
  • the substrate 100 may pass through R2), and any one of the plurality of reactive gas injectors R1 and R2 may inject a radical gas, install a plasma electrode, or include radical injection.
  • the source gas of the substrate processing apparatus 1 may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas (N-containing gas).
  • the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
  • the source gas of the substrate processing apparatus 1 may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may include nitriding gas or oxidizing gas.
  • the purge gas may comprise a non-reactive gas.
  • the source gas may include a Si-containing gas, and the first reactant gas and the second reactant gas may have different atomic amounts.
  • the source gas may include Si-containing gas, and the first reactive gas injector R1 may generate ozone (O 3 ), and the second reactive gas injector R2 may generate oxygen (O 2 ) plasma.
  • the source gas may include a Si-containing gas, and the first reactive gas injector R1 may generate oxygen (O 2 ), and the second reactive gas injector R2 may generate plasma including C and H. have.
  • the substrate processing apparatus 1 may include a first source gas injector S1 ⁇ a first purge gas injector P1 ⁇ a first reactive gas injector R1 ⁇ a second Thin film deposition using a deposition cycle including a purge gas injector P2 ⁇ a second reactive gas injector R2 ⁇ a third purge gas injector P3 may be performed.
  • a device for realizing a substrate processing apparatus 1 may include a plurality of reactive gas injectors R1 and R2, and may be arranged in one cycle or one rotation.
  • the substrate 100 may pass through the reactive gas injectors R1 and R2.
  • the interval between the reactive gas injectors is such that the source gas injector (the first source gas injector S1) and the purge gas injector (the first purge gas). It may be smaller than the interval of the injector (P1) or the third purge gas injector (P3).
  • the first reactive gas injector R1 and the second reactive gas injector R2 may include the same gas.
  • the first reaction gas injector R1 and the second reaction gas injector R2 may not have the same flow rate or flow rate ratio.
  • the source gas of the apparatus for realizing the substrate processing apparatus 1 may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas. (N-containing gas), and specifically, the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
  • a metal precursor Ti-containing precursor
  • N-containing gas nitride gas or an oxidizing gas.
  • the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
  • the source gas of the apparatus for realizing the substrate processing apparatus 1 may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may be nitrided.
  • Gas or oxidizing gas the purge gas may comprise a non-reactive gas, specifically, the source gas may comprise a Si containing gas, the reaction gas may comprise a N or O containing gas
  • the source gas may include Si-containing gas, and the first reactive gas injector R1 may generate ozone (O 3 ), and the second reactive gas injector R2 may generate oxygen (O 2 ) plasma.
  • the reaction gas (Source gas) may include a Si-containing gas
  • the first reaction gas injector (R1) is oxygen (O 2 )
  • the deposition process and the treatment process may be performed through one cycle or one or more rotations, and may be repeatedly rotated several times.
  • deposition films of the same source and deposition films of different sources may be deposited simultaneously or sequentially.
  • two times may be deposited in the same deposition film and three times in a different film out of order. It is also possible to alternately deposit the same film or different films.

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Abstract

La présente invention concerne un dispositif de traitement de substrat et un procédé de traitement de substrat, le dispositif comprenant : une chambre ; un suscepteur disposé sur la partie inférieure de la chambre et comportant au moins un substrat chargé en son sein ; une entrée de chambre disposée sur la partie supérieure du suscepteur ; un premier pulvérisateur de gaz source disposé dans l'entrée de chambre de façon à pulvériser un gaz source ; et un second pulvérisateur de gaz source disposé dans l'entrée de chambre de façon à pulvériser le gaz source, un premier pulvérisateur de gaz de purge étant disposé dans l'entrée de chambre et une pulvérisation de gaz de purge étant effectuée entre les premier et second pulvérisateurs de gaz source.
PCT/KR2016/004024 2015-04-28 2016-04-18 Dispositif de traitement de substrat et procédé de traitement de substrat WO2016175488A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201680024250.6A CN107567509A (zh) 2015-04-28 2016-04-18 基板处理装置及基板处理方法
US15/570,324 US20180130674A1 (en) 2015-04-28 2016-04-18 Apparatus and method for processing substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2015-0059987 2015-04-28
KR20150059987 2015-04-28
KR1020160046041A KR102487805B1 (ko) 2015-04-28 2016-04-15 기판 처리 장치 및 기판 처리 방법
KR10-2016-0046041 2016-04-15

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147372A (ja) * 2006-03-28 2009-07-02 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
KR20100078333A (ko) * 2008-12-30 2010-07-08 주식회사 테스 기판처리장치
KR20130133622A (ko) * 2012-05-29 2013-12-09 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR20140049170A (ko) * 2012-10-16 2014-04-25 주식회사 원익아이피에스 기판처리장치
KR20140101049A (ko) * 2013-02-07 2014-08-19 주식회사 원익아이피에스 기판 처리 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147372A (ja) * 2006-03-28 2009-07-02 Hitachi Kokusai Electric Inc 半導体デバイスの製造方法
KR20100078333A (ko) * 2008-12-30 2010-07-08 주식회사 테스 기판처리장치
KR20130133622A (ko) * 2012-05-29 2013-12-09 주성엔지니어링(주) 기판 처리 장치 및 기판 처리 방법
KR20140049170A (ko) * 2012-10-16 2014-04-25 주식회사 원익아이피에스 기판처리장치
KR20140101049A (ko) * 2013-02-07 2014-08-19 주식회사 원익아이피에스 기판 처리 장치

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