WO2016175488A1 - Substrate treatment device and substrate treatment method - Google Patents

Substrate treatment device and substrate treatment method Download PDF

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Publication number
WO2016175488A1
WO2016175488A1 PCT/KR2016/004024 KR2016004024W WO2016175488A1 WO 2016175488 A1 WO2016175488 A1 WO 2016175488A1 KR 2016004024 W KR2016004024 W KR 2016004024W WO 2016175488 A1 WO2016175488 A1 WO 2016175488A1
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WO
WIPO (PCT)
Prior art keywords
gas
gas injector
injector
purge gas
purge
Prior art date
Application number
PCT/KR2016/004024
Other languages
French (fr)
Korean (ko)
Inventor
한태성
강대봉
곽재찬
김가람
김두영
서동원
이상두
이성광
조병하
천동석
황철주
Original Assignee
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020160046041A external-priority patent/KR102487805B1/en
Application filed by 주성엔지니어링(주) filed Critical 주성엔지니어링(주)
Priority to CN201680024250.6A priority Critical patent/CN107567509A/en
Priority to US15/570,324 priority patent/US20180130674A1/en
Publication of WO2016175488A1 publication Critical patent/WO2016175488A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • C23C16/45542—Plasma being used non-continuously during the ALD reactions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

Definitions

  • the present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using one or more gas injectors to form a thin film on a substrate.
  • a semiconductor device In order to manufacture a solar cell, a semiconductor device, a flat panel display, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a surface of a substrate.
  • Semiconductor manufacturing processes such as a thin film deposition process, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.
  • Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimal environment for a corresponding process, and in recent years, a substrate processing apparatus for performing a deposition or etching process using plasma has been widely used.
  • the substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, and a plasma etching apparatus for etching and patterning a thin film.
  • PECVD plasma enhanced chemical vapor deposition
  • plasma etching apparatus for etching and patterning a thin film.
  • the present invention relates to a substrate processing apparatus and a substrate processing method, and to provide a substrate processing apparatus and a substrate processing method suitable for forming a uniform and dense thin film on the ultra-fine pattern formed on the substrate.
  • a substrate processing apparatus includes a chamber; A susceptor positioned below the chamber and having at least one substrate placed therein; A chamber lead positioned above the susceptor; A first source gas injector installed in the chamber lid to inject a source gas; A second source gas injector installed in the chamber lid to inject a source gas; A first purge gas injector installed in the chamber lid to inject a purge gas; And the purge gas injector may be installed between the first and second source gas injectors.
  • the source gas may include any one of Si-containing gas, Ti-containing precursor, Zr, Al, Hf, and Ta.
  • the first source gas injector, the second source gas injector, and the first purge gas injector installed in the chamber lid are radially installed in an outward direction with respect to the center of the chamber lead. Can be.
  • the distance between the center of the first source gas injector and the first purge gas injector provided in the chamber lid is the distance between the outer portion of the first source gas injector and the first purge gas injector. Can be shorter.
  • the substrate processing apparatus may further include a second purge gas injector and a third purge gas injector installed in the chamber lid to inject the purge gas.
  • the second purge gas injector or the third purge gas injector region may be wider than the first purge gas injector.
  • the gas injection flow rate of the second purge gas injector or the third purge gas injector may be higher than that of the first purge gas injector.
  • the substrate processing apparatus may further include a plurality of reaction gas injectors installed in the chamber leads to inject the reaction gas.
  • the reaction gas may include a nitrogen-containing gas or an oxygen-containing gas.
  • the substrate processing apparatus may include a plasma electrode in the reactive gas injector.
  • a substrate processing method includes a first step of mounting at least one substrate on a substrate support provided in the chamber; A second step of injecting a source gas through a first source gas injector provided on the substrate; A third step of injecting purge gas through a first purge gas injector provided on the substrate; And a fourth step of injecting the source gas through a second source gas injector installed on the substrate, wherein the substrate may sequentially perform the processes of the second, third, and fourth steps. have.
  • the source gas may include any one of Si-containing gas, Ti-containing precursor, Zr, Al, Hf, and Ta.
  • the substrate processing method according to the present invention may further include a fifth step of injecting a plurality of reaction gases installed in the chamber lid to inject the reaction gases.
  • the reaction gas may include a nitrogen-containing gas or an oxygen-containing gas.
  • the substrate processing method according to the present invention may include generating plasma or radical injection in the reactive gas injector.
  • the substrate processing method according to the present invention may further include a second purge gas injector and a third purge gas injector installed in the chamber lid to inject the purge gas.
  • the second purge gas injector or the third purge gas injector region may be wider than the first purge gas injector.
  • the gas injection flow rate of the second purge gas injector or the third purge gas injector may be higher than that of the first purge gas injector.
  • the substrate processing apparatus of the present invention may include a plurality of source gas injectors or a plurality of reactive gas injectors to form a uniform thin film on and inside the pattern on a substrate on which a complex and high aspect ratio pattern is formed.
  • the substrate processing apparatus of the present invention includes a plurality of purge gas injectors, and appropriately purges (removes) source gas remaining in and inside the pattern on the substrate on which the complex and high aspect ratio pattern is formed, thereby allowing the inside of the pattern. And a uniform thin film on the top.
  • the substrate processing apparatus of the present invention includes a plurality of source gas injectors or a plurality of reactive gas injectors, so that the adsorption of the source gas is sufficiently performed on the surface of the substrate, or the reaction of the source gas and the reactive gas on the substrate surface is sufficiently performed. By doing so, it is possible to improve the film quality of the deposited thin film.
  • the substrate processing apparatus of the present invention is a thin film deposited by forming a thin film on the surface of the substrate, or by surface treatment of the thin film formed on the substrate surface by forming a plasma electrode to the gas injector or sprayed activated radicals through the gas injector It can improve the film quality.
  • the substrate processing apparatus of the present invention by using a gas injector for deposition and a gas injector constituting part or all of the plasma electrode, by repeating the surface treatment by plasma after the deposition process or deposition on the substrate, The film quality of the thin film deposited on the substrate can be improved.
  • the substrate processing apparatus of the present invention uses a gas injector for the deposition and a gas injector constituting part or all of the plasma electrode, by spraying the gas activated by the plasma after the deposition process or deposition on the substrate By repeating deposition and surface treatment on the substrate, the film quality of the thin film deposited on the substrate can be improved.
  • the substrate processing apparatus of the present invention is to form a plasma electrode in the gas injector or to activate the radicals through the gas injector separately from the gas injector for deposition, to include impurities in the injected gas in the deposition or surface treatment process
  • impurities to be injected into the thin film formed on the substrate, the film quality of the deposited thin film can be improved.
  • the substrate processing apparatus of the present invention includes a plurality of source gas injectors or a plurality of reactive gas injectors, so that the adsorption of the source gas is sufficiently performed on the surface of the substrate, or the reaction of the source gas and the reactive gas on the substrate surface is sufficiently performed.
  • the atomic layer deposition which is realized by the rotation of the gas injector or the rotation of the substrate stabilizer, such a device realizes one rotation of one atomic layer deposition, and the shortage of gas supply or reaction time according to the increase of the rotational speed.
  • the deposition rate of the thin film can be improved while improving the film quality of the thin film deposited by offsetting the shortage.
  • the substrate processing apparatus of the present invention includes a plurality of source gas injectors, a plurality of reactive gas injectors, or a gas injector or radical injector including at least one plasma electrode, and the metal precursor or silicon-containing gas through the plurality of gas injectors.
  • a plurality of source gas injectors By spraying or by injecting an oxygen-containing gas or nitrogen-containing gas through the plurality of reaction gas injector to improve the film quality of the deposited film.
  • FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
  • FIG. 2 is a schematic cross-sectional view in which a plurality of substrates are placed on the susceptor of FIG. 1.
  • FIG. 3 is a schematic cross-sectional view of the chamber lid and the plurality of gas injectors of FIG.
  • FIG. 4 is a vertical schematic cross-sectional view of the gas injector of FIG. 1.
  • FIG. 5 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a second embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a third embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view of the chamber lid and the plurality of gas injectors of FIG. 6.
  • FIG. 8 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a fourth embodiment of the present invention.
  • FIG. 9 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a fifth embodiment of the present invention.
  • the substrate processing apparatus 1 constitutes a cross section of AA ′ of FIG. 4, and a susceptor (disk) 3 is disposed below the chamber 2. It is located, one or more substrates 100 may be placed on the susceptor (3).
  • the chamber lead 4 is positioned above the susceptor 3, that is, the upper part of the chamber 2, and the plurality of purge gas injection holes, the plurality of reaction gas injection holes, and the plurality of source gas injection holes are installed in the chamber lead 4. It is possible to have a structure in which two gas injectors 5 are inserted.
  • One side of the chamber 2 may be provided with a substrate entrance 21 through which the substrate 100 can enter and exit, and an exhaust port (not shown) may be installed at one side and a lower portion of the chamber 2.
  • the substrate processing apparatus 1 of FIG. 1 of the present invention may place a plurality of substrates 100 on the susceptor 3. As shown in FIG. 1, six substrates 100 may be placed in a concentric circle on one susceptor 3. When the plurality of substrates 100 may be positioned at equal intervals or at predetermined intervals, the susceptor 3 may be configured in plurality in correspondence with the number of the plurality of substrates 100. In addition, the susceptor 3 may rotate based on the center of the susceptor 3. Accordingly, the plurality of substrates 100 placed on the susceptor 3 may rotate based on the center of the susceptor 3 or the center of rotation.
  • one or more gas inlets 51 may be installed in the gas injector 5, and a plurality of injection holes 52 may be installed.
  • the gas inlet 51 may be injected from the top, side, and diagonal directions of the gas injector 5.
  • There is a hollow area in the gas injector 5 so that the space 53 is located between the injection hole 52 and the gas inlet 51 so that the gas can be uniformly injected so that the gas is injected into the injection hole 52.
  • the gas introduced from the gas inlet 51 may be injected into the injection hole 52 after the gas is filled in the space 53.
  • the plurality of gas injectors 5 may be positioned radially or at the center purge with respect to the chamber lead 4. At least one or more of the plurality of gas injectors 5 may be formed by forming at least one row of injection holes 52 in a radial direction from the center of the chamber lead 4. Alternatively, at least one of the plurality of gas injectors 5 may include a shower head-type gas injector 5 in which a plurality of injection holes 52 are formed from the chamber lead 4 to the substrate 100 on the susceptor 3. Can be).
  • the plurality of gas injectors 5 may be embedded in the chamber leads 4, may form openings in the chamber leads 4, and respective gas injectors 5 may be inserted into the openings, and the chamber leads 4 may be inserted into the chamber leads 4. ), Each gas injector 5 may be inserted into the recess.
  • the process sequence of the substrate processing apparatus 1 including the chamber chamber lead 4 and the plurality of gas injectors 5 according to an embodiment of the present invention is based on the first source gas injector S1.
  • 1 Thin film deposition using a deposition cycle consisting of a purge gas injector P1 ⁇ a second source gas injector S2 ⁇ a second purge gas injector P2 ⁇ a reactive gas injector R ⁇ a third purge gas injector P3 Device and thin film deposition method.
  • the order of the deposition cycle according to the present embodiment may be the above method, or the process may be performed in the order of the deposition cycle in the opposite direction.
  • a plurality of source gas injectors S1 and S2 are disposed as a device for realizing a substrate processing process according to a first embodiment of the present invention, and thus, a plurality of source gas injectors may be performed in one cycle or one rotation.
  • (S1, S2) may be made of a gas injection device, characterized in that the substrate 100 passes.
  • the distance between the source gas injectors S1 and S2 and the purge gas injectors P1, P2 and P3 may be smaller than the distance between the reaction gas injector R and the purge gas injectors P1, P2 and P3. have.
  • the supplied first source gas and the second source gas may include the same gas.
  • the first source gas and the second source gas may not have the same flow rate or flow rate ratio.
  • a source gas of the substrate treating process according to the first embodiment of the present invention may include a metal precursor, and the reactant gas may be a nitride gas or an oxidizing gas. It may include, the purge gas (Purge gas) may include a non-reactive gas.
  • the source gas may include a Ti-containing precursor, and the reaction gas may include an N-containing gas.
  • the source gas may include a Zr (or Al, Hf, Ta, ..., etc.) containing precursor, the reaction gas may include an oxygen (oxygen, O) containing gas.
  • the source gas of the substrate treating process according to the first embodiment of the present invention may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may include nitriding gas or oxidizing gas.
  • the purge gas may include a non-reactive gas, and specifically, the source gas may include a Si containing gas, and the reactant gas may include nitrogen (Nitrogen, N) or oxygen (oxygen, O) containing gas. can do.
  • the source gas in the source gas injector S1 may include a metal precursor (Ti-containing precursor).
  • the source gas may include Zr (or Al, Hf, Ta, ).
  • the source gas injected from the source gas injector S1 may be subjected to a first source gas process injected to the plurality of substrates.
  • the source gas is injected by the source gas injector S1, and the purge gas is injected by the purge gas injector P1.
  • the purge gas injected from the purge gas injector P1 may remove (purge) a portion of the source gas injected from the source gas injector S1.
  • the purge gas injector P1 and the lower surface of the pattern and the pattern side of the substrate may be relatively less film than the upper portion of the pattern.
  • the source gas may be injected again through the source gas injector S2, and a second source gas injection process may be performed on the substrate.
  • the source gas may include a metal precursor (Ti-containing precursor).
  • the source gas may include Zr (or Al, Hf, Ta, ).
  • step coverage may be improved when the film is uniformly deposited on the upper side of the pattern, the lower side of the pattern, and the side surfaces between the upper side and the lower side of the pattern. . Since the height of the film on the top, bottom, and side of the pattern of the substrate is uniform, the film may be filled up to the bottom of the substrate, so that a uniform film may be deposited between the wafer patterns, so that the operation of the semiconductor device may operate without abnormality. have.
  • a first step of mounting at least one substrate on a substrate support provided in the chamber may be performed.
  • a second step of injecting the source gas may be performed through the first source gas injector S1 installed on the substrate 100.
  • a third step of spraying the purge gas may be performed through the purge gas injector P1 provided on the substrate.
  • a fourth step of injecting the source gas through the second source gas injector S2 provided on the substrate may be performed.
  • the substrate may sequentially perform the second, third and fourth processes. Through the sequential progress of the process, a uniform film may be uniformly deposited on the top, side, and bottom of the wafer pattern.
  • the source gas of this process may be a gas containing Ti.
  • the source gas flow rate injected from the first source gas injector and the source gas flow rate injected from the second source gas injector may be the same or may be different.
  • the first source gas injector S1, the second source gas injector S2, and the first purge gas injector P1 including a plurality of gas injectors 5 installed in the chamber lid 4.
  • the distance between the center of the first source gas injector and the first purge gas injector is greater than the distance between the outer parts of the chamber lid 4, that is, the edge part is the outer part. It can be short. In contrast, the distance near the edges, i.e., the edges, may be longer than the distance between the centers. In addition, the shorter (closer) distance between the gas injectors 5 may be expressed by the distance between the gas injectors 5 being narrower, and the longer (far) distance between the gas injectors 5 being wider. I can express it.
  • the process sequence of the substrate processing apparatus 1 including the chamber lead 4 and the plurality of gas injectors 5 is the first source gas injector S1 ⁇ first.
  • Thin film deposition apparatus using a deposition cycle consisting of a purge gas injector (P1) ⁇ a second source gas injector (S2) ⁇ a second purge gas injector (P2) ⁇ a reactive gas injector (R) ⁇ a third purge gas injector (P3) And a thin film deposition method.
  • the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 of the second purge gas injector P2 or the third purge gas injector P3 The gas injection region may be wider, and the second purge gas injector P2 may be larger than the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 in the thin film deposition apparatus.
  • the gas injection flow rate of the third purge gas injector P3 may be higher than that of the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 in the thin film deposition apparatus.
  • the number of gas injection holes of the second purge gas injector P2 or the third purge gas injector P3 may be higher.
  • the gas injection region of the reaction gas injector R may be wider than the first source gas injector S1 or the second source gas injector S2, and the first source gas injector S1 or the second source gas injector S2 may be larger.
  • the gas injection flow rate of the reaction gas injector R may be higher than that of the reaction gas injector R, and the number of the gas injection holes of the reaction gas injector R may be greater than that of the first source gas injector S1 or the second source gas injector S2. It may be a device.
  • the first purge gas injector P1 is formed between the first source gas injector S1 and the second source gas injector S2 positioned between the second purge gas injector P2 or the third purge gas injector P3. The distance may be closer.
  • the depositing of the substrate on which the pattern is formed by the substrate processing apparatus 1 may include purging the first source gas injector S1 ⁇ the upper pattern gas. ⁇ a second source gas injector S2 ⁇ purging the upper part of the pattern and the inside of the pattern (Large purge) ⁇ a reactive gas injector R ⁇ purging the upper part of the pattern and the inside of the pattern.
  • the step of injecting the Ti-containing gas into and above the pattern ⁇ the step of purging the upper gas of the pattern or the step of not sufficiently removing the Ti gas in the pattern ⁇ the step of injecting the Ti-containing gas into and above the pattern ⁇ pattern Purging the upper part and the inside of the pattern ⁇ spraying the N-containing gas into the upper part and the upper part of the pattern ⁇ may purge the upper part and the inside of the pattern.
  • the substrate processing apparatus 1 may include a first source gas injector S1 ⁇ a first purge gas injector P1 ⁇ a second source gas injector S2 ⁇ a second source gas injector S1.
  • a deposition cycle consisting of purge gas injector (P2) ⁇ first reaction gas injector (R1) ⁇ third purge gas injector (P3) ⁇ second reaction gas injector (R2) ⁇ fourth purge gas injector (P4) Deposition method.
  • a plurality of reaction gas injectors R1 and R2 of an apparatus for realizing a substrate processing apparatus 1 are disposed, and a plurality of reactions are performed in one cycle or one rotation.
  • the substrate 100 may pass through the gas injectors R1 and R2. Further, the interval between the first reactive gas injector R1 and the second reactive gas injector R2 is smaller than the interval between the first reactive gas injector R1 and the second purge gas injector P2. I can (narrowly) do it. Alternatively, the interval between the first reactive gas injector R1 and the second reactive gas injector R2 is smaller than the interval between the second reactive gas injector R2 and the fourth purge gas injector P4. I can (narrowly) do it.
  • first reactive gas injector R1 and the second reactive gas injector R2 may include the same gas.
  • the flow rate or the flow rate ratio of the first reaction gas injector R1 and the second reaction gas injector R2 may not be the same.
  • the source gas of the apparatus for realizing the substrate processing apparatus 1 may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas. (N-containing gas) may be included.
  • the source gas may include a Zr (or Al, Hf, Ta, ...) containing precursor, and the reaction gas may include an O-containing gas.
  • the source gas may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may be nitrided. Gas or oxidizing gas may be included and the purge gas may comprise a non-reactive gas.
  • the source gas may include Si-containing gas, and the reaction gas may include N or O-containing gas.
  • an RF power source / RF matcher 6 may be connected to the source gas injector or the reactive gas injector.
  • the RF power source / RF matcher 6 may be used to generate plasma in some of the reaction spaces inside the chamber 2.
  • the substrate processing apparatus may include a first source gas injector S1 ⁇ a first purge gas injector P1 ⁇ a second source gas injector S2 ⁇ a second purge gas injector (P2) ⁇ a first reactive gas injector R1 ⁇ a third purge fraud injector P3 ⁇ a second plasma reactive gas injector R2, a plasma electrode or radical injection ⁇ a deposition consisting of a fourth purge gas injector P4
  • the first reactive gas injector R1 or the second reactive gas injector R2 may be provided with a plasma electrode or spray radicals.
  • the substrate processing apparatus 1 may include a plurality of reactive gas injectors R1 and R2, and may include a plurality of reactive gas injectors R1 and one cycle or one rotation.
  • the substrate 100 may pass through R2), and any one of the plurality of reactive gas injectors R1 and R2 may inject a radical gas, install a plasma electrode, or include radical injection.
  • the source gas of the substrate processing apparatus 1 may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas (N-containing gas).
  • the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
  • the source gas of the substrate processing apparatus 1 may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may include nitriding gas or oxidizing gas.
  • the purge gas may comprise a non-reactive gas.
  • the source gas may include a Si-containing gas, and the first reactant gas and the second reactant gas may have different atomic amounts.
  • the source gas may include Si-containing gas, and the first reactive gas injector R1 may generate ozone (O 3 ), and the second reactive gas injector R2 may generate oxygen (O 2 ) plasma.
  • the source gas may include a Si-containing gas, and the first reactive gas injector R1 may generate oxygen (O 2 ), and the second reactive gas injector R2 may generate plasma including C and H. have.
  • the substrate processing apparatus 1 may include a first source gas injector S1 ⁇ a first purge gas injector P1 ⁇ a first reactive gas injector R1 ⁇ a second Thin film deposition using a deposition cycle including a purge gas injector P2 ⁇ a second reactive gas injector R2 ⁇ a third purge gas injector P3 may be performed.
  • a device for realizing a substrate processing apparatus 1 may include a plurality of reactive gas injectors R1 and R2, and may be arranged in one cycle or one rotation.
  • the substrate 100 may pass through the reactive gas injectors R1 and R2.
  • the interval between the reactive gas injectors is such that the source gas injector (the first source gas injector S1) and the purge gas injector (the first purge gas). It may be smaller than the interval of the injector (P1) or the third purge gas injector (P3).
  • the first reactive gas injector R1 and the second reactive gas injector R2 may include the same gas.
  • the first reaction gas injector R1 and the second reaction gas injector R2 may not have the same flow rate or flow rate ratio.
  • the source gas of the apparatus for realizing the substrate processing apparatus 1 may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas. (N-containing gas), and specifically, the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
  • a metal precursor Ti-containing precursor
  • N-containing gas nitride gas or an oxidizing gas.
  • the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
  • the source gas of the apparatus for realizing the substrate processing apparatus 1 may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may be nitrided.
  • Gas or oxidizing gas the purge gas may comprise a non-reactive gas, specifically, the source gas may comprise a Si containing gas, the reaction gas may comprise a N or O containing gas
  • the source gas may include Si-containing gas, and the first reactive gas injector R1 may generate ozone (O 3 ), and the second reactive gas injector R2 may generate oxygen (O 2 ) plasma.
  • the reaction gas (Source gas) may include a Si-containing gas
  • the first reaction gas injector (R1) is oxygen (O 2 )
  • the deposition process and the treatment process may be performed through one cycle or one or more rotations, and may be repeatedly rotated several times.
  • deposition films of the same source and deposition films of different sources may be deposited simultaneously or sequentially.
  • two times may be deposited in the same deposition film and three times in a different film out of order. It is also possible to alternately deposit the same film or different films.

Abstract

The present invention provides a substrate treatment device and a substrate treatment method, the device comprising: a chamber; a susceptor positioned on the lower part of the chamber and having at least one substrate loaded therein; a chamber lead positioned on the upper part of the susceptor; a first source gas spray provided in the chamber lead so as to spray source gas; and a second source gas spray provided in the chamber lead so as to spray source gas, wherein a first purge gas spray provided in the chamber lead and spraying purge gas is provided between the first and second source gas sprays.

Description

기판 처리 장치 및 기판 처리 방법Substrate processing apparatus and substrate processing method
본 발명은 기판 처리 장치에 관한 것으로, 기판 상에 박막을 형성하기 위하여 하나 이상 복수 개의 가스분사기를 이용하는 기판 처리장치에 관한 것이다. 본 발명의 기판 처리 장치를 이용하여 초미세 패턴이 형성된 기판 상에 균일하고, 치밀한 박막을 형성하는 기판 처리 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus using one or more gas injectors to form a thin film on a substrate. A substrate processing method for forming a uniform and dense thin film on a substrate on which an ultrafine pattern is formed using the substrate processing apparatus of the present invention.
일반적으로, 태양전지(Solar Cell), 반도체 소자, 평판 디스플레이 등을 제조하기 위해서는 기판 표면에 소정의 박막층, 박막 회로 패턴, 또는 광학적 패턴을 형성하여야 하며, 이를 위해서는 기판에 특정 물질의 박막을 증착하는 박막 증착 공정, 감광성 물질을 사용하여 박막을 선택적으로 노출시키는 포토 공정, 선택적으로 노출된 부분의 박막을 제거하여 패턴을 형성하는 식각 공정 등의 반도체 제조공정을 수행하게 된다.In general, in order to manufacture a solar cell, a semiconductor device, a flat panel display, a predetermined thin film layer, a thin film circuit pattern, or an optical pattern should be formed on a surface of a substrate. Semiconductor manufacturing processes such as a thin film deposition process, a photo process for selectively exposing the thin film using a photosensitive material, and an etching process for forming a pattern by removing the thin film of the selectively exposed portion are performed.
이러한 반도체 제조 공정은 해당 공정을 위해 최적의 환경으로 설계된 기판처리 장치의 내부에서 진행되며, 최근에는 플라즈마를 이용하여 증착 또는 식각 공정을 수행하는 기판 처리 장치가 많이 사용되고 있다.Such a semiconductor manufacturing process is performed inside a substrate processing apparatus designed for an optimal environment for a corresponding process, and in recent years, a substrate processing apparatus for performing a deposition or etching process using plasma has been widely used.
플라즈마를 이용한 기판 처리 장치에는 플라즈마를 이용하여 박막을 형성하는 PECVD(Plasma Enhanced Chemical Vapor Deposition) 장치, 및 박막을 식각하여 패터닝하는 플라즈마 식각 장치 등이 있다.The substrate processing apparatus using plasma includes a plasma enhanced chemical vapor deposition (PECVD) apparatus for forming a thin film using plasma, and a plasma etching apparatus for etching and patterning a thin film.
종래의 반도체 제조 공정 및 장비는 복잡하고 종횡비가 큰 패턴이 형성된 기판에서 패턴의 내부 및 상부에 잔류하는 소스 가스를 퍼지하지 못해 패턴의 내부 와 상부에 균일한 박막을 형성할 수 없어 패턴간의 균일하고, 내부 및 상부간의 스텝커버리지(Step coverage)가 균일하지 않았으며, 이로 인해 공정의 생산성까지 저하되는 문제점이 있었다.Conventional semiconductor fabrication processes and equipment are unable to purge the source gas remaining in and on the top of the pattern on the substrate on which the complex and high aspect ratio pattern is formed so that a uniform thin film cannot be formed on and inside the pattern. , The step coverage (Step coverage) between the inside and the top was not uniform, thereby lowering the productivity of the process.
본 발명은 기판 처리 장치 및 기판 처리 방법에 관한 것으로, 기판에 형성된초미세 패턴 상에 균일하고 치밀한 박막을 형성하기 위하여 이에 적합한 기판 처리 장치 및 기판 처리 방법을 제공하고자 한다.The present invention relates to a substrate processing apparatus and a substrate processing method, and to provide a substrate processing apparatus and a substrate processing method suitable for forming a uniform and dense thin film on the ultra-fine pattern formed on the substrate.
본 발명에 따른 기판 처리 장치는 챔버; 상기 챔버 하부에 위치되고 적어도 하나의 기판이 안치되는 서셉터; 상기 서셉터 상부에 위치된 챔버리드; 상기 챔버리드에 설치되어 소스 가스를 분사하는 제 1 소스 가스 분사기; 상기 챔버리드에 설치되어 소스 가스를 분사하는 제 2 소스 가스 분사기; 상기 챔버리드에 설치되어 퍼지 가스를 분사하는 제 1 퍼지 가스 분사기; 및 상기 제 1 및 제 2 소스 가스 분사기 사이에 상기 퍼지 가스 분사기가 설치될 수 있다.A substrate processing apparatus according to the present invention includes a chamber; A susceptor positioned below the chamber and having at least one substrate placed therein; A chamber lead positioned above the susceptor; A first source gas injector installed in the chamber lid to inject a source gas; A second source gas injector installed in the chamber lid to inject a source gas; A first purge gas injector installed in the chamber lid to inject a purge gas; And the purge gas injector may be installed between the first and second source gas injectors.
본 발명에 따른 기판 처리 장치에 있어서, 상기 소스 가스는 Si 함유가스, Ti 함유 전구체, Zr, Al, Hf, 및 Ta 중 어느 하나를 포함할 수 있다.In the substrate processing apparatus according to the present invention, the source gas may include any one of Si-containing gas, Ti-containing precursor, Zr, Al, Hf, and Ta.
본 발명에 따른 기판 처리 장치에 있어서, 상기 챔버리드에 설치된 상기 제 1 소스 가스 분사기, 상기 제 2 소스 가스 분사기, 상기 제 1 퍼지 가스 분사기는 상기 챔버리드의 중심부를 기준으로 외곽부 방향으로 방사상 설치될 수 있다.In the substrate processing apparatus according to the present invention, the first source gas injector, the second source gas injector, and the first purge gas injector installed in the chamber lid are radially installed in an outward direction with respect to the center of the chamber lead. Can be.
본 발명에 따른 기판 처리 장치에 있어서, 상기 챔버리드에 설치된 상기 제 1 소스 가스 분사기와 상기 제 1 퍼지 가스 분사기의 중심부 간의 거리는 상기 제 1 소스 가스 분사기와 상기 제 1 퍼지 가스 분사기의 외곽부 간의 거리 보다 짧을 수 있다.In the substrate processing apparatus according to the present invention, the distance between the center of the first source gas injector and the first purge gas injector provided in the chamber lid is the distance between the outer portion of the first source gas injector and the first purge gas injector. Can be shorter.
본 발명에 따른 기판 처리 장치는, 상기 챔버리드에 설치되어 퍼지 가스를 분사하는 제 2 퍼지 가스 분사기와 제 3 퍼지 가스 분사기를 더 포함할 수 있다.The substrate processing apparatus according to the present invention may further include a second purge gas injector and a third purge gas injector installed in the chamber lid to inject the purge gas.
본 발명에 따른 기판 처리 장치에 있어서, 상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기 영역이 더 넓을 수 있다.In the substrate processing apparatus according to the present invention, the second purge gas injector or the third purge gas injector region may be wider than the first purge gas injector.
본 발명에 따른 기판 처리 장치에 있어서, 상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기의 가스분사유량이 더 많을 수 있다.In the substrate processing apparatus according to the present invention, the gas injection flow rate of the second purge gas injector or the third purge gas injector may be higher than that of the first purge gas injector.
본 발명에 따른 기판 처리 장치는, 상기 챔버리드에 설치되어 반응 가스를 분사하는 복수개의 반응 가스 분사기를 더 포함할 수 있다.The substrate processing apparatus according to the present invention may further include a plurality of reaction gas injectors installed in the chamber leads to inject the reaction gas.
본 발명에 따른 기판 처리 장치에 있어서, 상기 반응 가스는 질소 함유 가스 또는 산소 함유 가스를 포함할 수 있다.In the substrate processing apparatus according to the present invention, the reaction gas may include a nitrogen-containing gas or an oxygen-containing gas.
본 발명에 따른 기판 처리 장치는, 상기 반응 가스 분사기에 플라즈마 전극을 포함할 수 있다.The substrate processing apparatus according to the present invention may include a plasma electrode in the reactive gas injector.
본 발명에 따른 기판 처리 방법은, 챔버의 내부에 설치된 기판 지지부에 적어도 하나의 기판을 안착시키는 제 1 단계; 상기 기판의 상부에 설치된 제 1 소스 가스 분사기를 통해 소스 가스를 분사하는 제 2 단계; 상기 기판의 상부에 설치된 제 1 퍼지가스 분사기를 통해 퍼지 가스를 분사하는 제 3 단계; 상기 기판의 상부에 설치된 제 2 소스가스 분사기를 통해 소스 가스를 분사하는 제 4 단계;를 포함하며, 상기 기판은 상기 제 2 단계, 상기 제 3 단계, 상기 제 4 단계의 공정을 순차적으로 진행할 수 있다.A substrate processing method according to the present invention includes a first step of mounting at least one substrate on a substrate support provided in the chamber; A second step of injecting a source gas through a first source gas injector provided on the substrate; A third step of injecting purge gas through a first purge gas injector provided on the substrate; And a fourth step of injecting the source gas through a second source gas injector installed on the substrate, wherein the substrate may sequentially perform the processes of the second, third, and fourth steps. have.
본 발명에 따른 기판 처리 방법에 있어서, 상기 소스 가스는 Si 함유가스, Ti 함유 전구체, Zr, Al, Hf, 및 Ta 중 어느 하나를 포함할 수 있다.In the substrate processing method according to the present invention, the source gas may include any one of Si-containing gas, Ti-containing precursor, Zr, Al, Hf, and Ta.
본 발명에 따른 기판 처리 방법은, 상기 챔버리드에 설치되어 반응 가스를 분사하는 복수개의 반응 가스를 분사하는 제 5단계를 더 포함할 수 있다.The substrate processing method according to the present invention may further include a fifth step of injecting a plurality of reaction gases installed in the chamber lid to inject the reaction gases.
본 발명에 따른 기판 처리 방법에 있어서, 상기 반응 가스는 질소 함유 가스 또는 산소 함유 가스를 포함할 수 있다.In the substrate processing method according to the present invention, the reaction gas may include a nitrogen-containing gas or an oxygen-containing gas.
본 발명에 따른 기판 처리 방법은, 상기 반응 가스 분사기에서 플라즈마를 생성 또는 라디칼 분사를 포함할 수 있다.The substrate processing method according to the present invention may include generating plasma or radical injection in the reactive gas injector.
본 발명에 따른 기판 처리 방법은, 상기 챔버리드에 설치되어 퍼지 가스를 분사하는 제 2 퍼지 가스 분사기와 제 3 퍼지 가스 분사기를 더 포함할 수 있다.The substrate processing method according to the present invention may further include a second purge gas injector and a third purge gas injector installed in the chamber lid to inject the purge gas.
본 발명에 따른 기판 처리 방법에 있어서, 상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기 영역이 더 넓을 수 있다.In the substrate processing method according to the present invention, the second purge gas injector or the third purge gas injector region may be wider than the first purge gas injector.
본 발명에 따른 기판 처리 방법에 있어서, 상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기의 가스분사유량이 더 많을 수 있다.In the substrate processing method according to the present invention, the gas injection flow rate of the second purge gas injector or the third purge gas injector may be higher than that of the first purge gas injector.
본 발명의 기판 처리 장치는 복수 개의 소스 가스 분사기 또는 복수 개의 반응 가스 분사기를 포함하여, 복잡하고 종횡비가 큰 패턴이 형성된 기판에서 패턴의 내부 및 상부에 균일한 박막을 형성할 수 있다.The substrate processing apparatus of the present invention may include a plurality of source gas injectors or a plurality of reactive gas injectors to form a uniform thin film on and inside the pattern on a substrate on which a complex and high aspect ratio pattern is formed.
또한, 본 발명의 기판 처리 장치는 복수 개의 퍼지 가스 분사기를 포함하여, 복잡하고 종횡비가 큰 패턴이 형성된 기판에서 패턴의 내부 및 상부에 잔류하는 소스 가스를 적절하게 퍼지(제거)하여, 패턴의 내부 및 상부에 균일한 박막을 형성할 수 있다.In addition, the substrate processing apparatus of the present invention includes a plurality of purge gas injectors, and appropriately purges (removes) source gas remaining in and inside the pattern on the substrate on which the complex and high aspect ratio pattern is formed, thereby allowing the inside of the pattern. And a uniform thin film on the top.
또한, 본 발명의 기판 처리 장치는 복수 개의 소스 가스 분사기 또는 복수 개의 반응 가스 분사기를 포함하여, 기판 표면에 소스 가스의 흡착이 충분히 이뤄지도록 하거나, 또는 기판 표면에서 소스 가스와 반응 가스의 반응이 충분히 이뤄지도록 함으로써, 증착되는 박막의 막질을 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention includes a plurality of source gas injectors or a plurality of reactive gas injectors, so that the adsorption of the source gas is sufficiently performed on the surface of the substrate, or the reaction of the source gas and the reactive gas on the substrate surface is sufficiently performed. By doing so, it is possible to improve the film quality of the deposited thin film.
또한, 본 발명의 기판 처리 장치는 가스 분사기에 플라즈마 전극이 형성되거나 가스 분사기를 통하여 활성화된 라디칼을 분사하도록 하여, 기판 표면에 박막을 형성하거나, 기판 표면에 형성된 박막을 표면처리함으로써, 증착되는 박막의 막질을 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention is a thin film deposited by forming a thin film on the surface of the substrate, or by surface treatment of the thin film formed on the substrate surface by forming a plasma electrode to the gas injector or sprayed activated radicals through the gas injector It can improve the film quality.
또한, 본 발명의 기판 처리 장치는 증착을 위한 가스 분사기와 플라즈마 전극의 일부 또는 전부를 구성하는 가스 분사기를 사용하여, 기판 상에 박막을 증착과정 또는 증착 이후에 플라즈마에 의한 표면처리를 반복함으로써, 기판 상에 증착되는 박막의 막질을 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention by using a gas injector for deposition and a gas injector constituting part or all of the plasma electrode, by repeating the surface treatment by plasma after the deposition process or deposition on the substrate, The film quality of the thin film deposited on the substrate can be improved.
또한, 본 발명의 기판 처리 장치는 증착을 위한 가스 분사기와 플라즈마 전극의 일부 또는 전부를 구성하는 가스 분사기를 사용하고, 기판 상에 박막을 증착과정 또는 증착 이후에 플라즈마에 의하여 활성화된 가스를 분사하여, 기판 상에 증착과 표면처리를 반복함으로써, 기판 상에 증착되는 박막의 막질을 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention uses a gas injector for the deposition and a gas injector constituting part or all of the plasma electrode, by spraying the gas activated by the plasma after the deposition process or deposition on the substrate By repeating deposition and surface treatment on the substrate, the film quality of the thin film deposited on the substrate can be improved.
또한, 본 발명의 기판 처리 장치는 증착을 위한 가스 분사기와 별도로 가스 분사기에 플라즈마 전극이 형성되거나 가스 분사기를 통하여 활성화된 라디칼을 분사하도록 하여, 분사되는 가스에 불순물을 포함시켜 증착 또는 표면처리 과정에서 기판 상에 형성된 박막에 불순물이 주입되게 형성함으로써, 증착되는 박막의 막질을 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention is to form a plasma electrode in the gas injector or to activate the radicals through the gas injector separately from the gas injector for deposition, to include impurities in the injected gas in the deposition or surface treatment process By forming impurities to be injected into the thin film formed on the substrate, the film quality of the deposited thin film can be improved.
또한, 본 발명의 기판 처리 장치는 복수 개의 소스 가스 분사기 또는 복수 개의 반응 가스 분사기를 포함하여, 기판 표면에 소스 가스의 흡착이 충분히 이뤄지도록 하거나, 또는 기판 표면에서 소스 가스와 반응 가스의 반응이 충분히 이뤄지도록 함으로써, 가스 분사기의 회전 또는 기판 안치대의 회전으로 구현되는 원자층 증착에 있어서, 이러한 장치는 1회전이 1원자층 증착을 구현하고, 회전속도의 증가에 따른 가스공급의 부족 또는 반응시간의 부족을 상쇄하여 증착되는 박막의 막질을 향상시키면서, 박막의 증착속도를 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention includes a plurality of source gas injectors or a plurality of reactive gas injectors, so that the adsorption of the source gas is sufficiently performed on the surface of the substrate, or the reaction of the source gas and the reactive gas on the substrate surface is sufficiently performed. In the atomic layer deposition, which is realized by the rotation of the gas injector or the rotation of the substrate stabilizer, such a device realizes one rotation of one atomic layer deposition, and the shortage of gas supply or reaction time according to the increase of the rotational speed. The deposition rate of the thin film can be improved while improving the film quality of the thin film deposited by offsetting the shortage.
또한, 본 발명의 기판 처리 장치는 복수 개의 소스 가스 분사기 또는 복수 개의 반응 가스 분사기 또는 적어도 하나 이상의 플라즈마 전극을 포함한 가스 분사기 또는 라디칼 분사기를 포함하여, 상기 복수 개의 가스 분사기를 통하여 금속전구체 또는 실리콘 함유가스를 분사하거나, 상기 복수 개의 반응 가스 분사기를 통하여 산소 함유가스 또는 질소 함유가스를 분사하여 증착되는 박막의 막질을 향상시킬 수 있다.In addition, the substrate processing apparatus of the present invention includes a plurality of source gas injectors, a plurality of reactive gas injectors, or a gas injector or radical injector including at least one plasma electrode, and the metal precursor or silicon-containing gas through the plurality of gas injectors. By spraying or by injecting an oxygen-containing gas or nitrogen-containing gas through the plurality of reaction gas injector to improve the film quality of the deposited film.
도 1은 본 발명의 일 실시 예에 따른 기판 처리 장치의 개략 단면도1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
도 2는 도 1의 서셉터 상에 복수 개의 기판이 안치된 개략 개략 단면도FIG. 2 is a schematic cross-sectional view in which a plurality of substrates are placed on the susceptor of FIG. 1.
도 3는 도 1의 챔버리드와 복수 개의 가스 분사기의 개략 단면도3 is a schematic cross-sectional view of the chamber lid and the plurality of gas injectors of FIG.
도 4는 도 1의 가스 분사기의 수직 개략 단면도4 is a vertical schematic cross-sectional view of the gas injector of FIG. 1.
도 5는 본 발명의 제 2 실시 예에 따른 챔버리드와 복수 개의 가스 분사기의 개략 단면도5 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a second embodiment of the present invention.
도 6는 본 발명의 제 3 실시 예에 따른 챔버리드와 복수 개의 가스 분사기의 개략 단면도6 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a third embodiment of the present invention.
도 7는 도 6의 챔버리드와 복수 개의 가스 분사기의 개략 단면도7 is a schematic cross-sectional view of the chamber lid and the plurality of gas injectors of FIG. 6.
도 8는 본 발명의 제 4 실시 예에 따른 챔버리드와 복수 개의 가스 분사기의 개략 단면도8 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a fourth embodiment of the present invention.
도 9는 본 발명의 제 5 실시 예에 따른 챔버리드와 복수 개의 가스 분사기의 개략 단면도9 is a schematic cross-sectional view of a chamber lead and a plurality of gas injectors according to a fifth embodiment of the present invention.
이하, 본 발명의 실시 예를 상세히 설명하기로 한다. 그러나, 본 발명은 이하에서 개시되는 실시 예에 한정되는 것이 아니라 서로 다른 다양한 형태로 구현될 것이며, 단지 본 실시 예들은 본 발명의 개시가 완전하도록 하며, 통상의 지식을 가진 자에게 발명의 범주를 완전하게 알려주기 위해 제공되는 것이다.Hereinafter, embodiments of the present invention will be described in detail. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information.
도 1을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)는 도 4의 A-A'의 단면을 구성하였고, 챔버(2)의 하부에 서셉터(디스크)(3)가 위치하고 있으며, 서셉터(3)의 위에는 한 장 이상의 복수개의 기판(100)이 안치될 수 있다. 서셉터(3)의 상부 즉, 챔버(2) 상부에는 챔버리드(4)가 위치하고 있으며 챔버리드(4)에는 복수개의 퍼지가스 분사구 및 복수개의 반응 가스 분사구 및 복수개의 소스 가스 분사구가 설치되어 복수개의 가스 분사기(5)가 삽입되는 구조가 될 수 있다. 챔버(2)의 일측면에는 기판(100)이 출입 할 수 있는 기판출입구(21)가 설치 될 수 있고, 챔버(2) 일측면 및 하부에 배기구(미도시)가 설치 될 수 있다.Referring to FIG. 1, the substrate processing apparatus 1 according to the exemplary embodiment of the present invention constitutes a cross section of AA ′ of FIG. 4, and a susceptor (disk) 3 is disposed below the chamber 2. It is located, one or more substrates 100 may be placed on the susceptor (3). The chamber lead 4 is positioned above the susceptor 3, that is, the upper part of the chamber 2, and the plurality of purge gas injection holes, the plurality of reaction gas injection holes, and the plurality of source gas injection holes are installed in the chamber lead 4. It is possible to have a structure in which two gas injectors 5 are inserted. One side of the chamber 2 may be provided with a substrate entrance 21 through which the substrate 100 can enter and exit, and an exhaust port (not shown) may be installed at one side and a lower portion of the chamber 2.
도 2를 참조하면, 본 발명의 도 1의 기판 처리 장치(1)는 서셉터(3) 위에 복수 개의 기판(100)을 안치할 수 있다. 도 1에 도시된 바와 같이 하나의 서셉터(3)에 6개의 기판(100)이 동심원 상에서 안치될 수 있다. 복수 개의 기판(100)이 등간격 또는 미리 지정된 간격을 가지고 위치할 수 있으면, 서셉터(3)는 복수 개의 기판(100)의 개수에 개별적으로 대응되어 복수 개로 구성될 수도 있다. 또한 상기 서셉터(3)는 서셉터(3)의 중심을 기준으로 회전할 수 있다. 이에 따라 상기 서셉터(3) 상에 안치된 복수 개의 기판(100)은 상기 서셉터(3)의 중심 또는 상기 회전의 중심을 기준으로 회전할 수 있다.Referring to FIG. 2, the substrate processing apparatus 1 of FIG. 1 of the present invention may place a plurality of substrates 100 on the susceptor 3. As shown in FIG. 1, six substrates 100 may be placed in a concentric circle on one susceptor 3. When the plurality of substrates 100 may be positioned at equal intervals or at predetermined intervals, the susceptor 3 may be configured in plurality in correspondence with the number of the plurality of substrates 100. In addition, the susceptor 3 may rotate based on the center of the susceptor 3. Accordingly, the plurality of substrates 100 placed on the susceptor 3 may rotate based on the center of the susceptor 3 or the center of rotation.
도 3을 참조하면, 가스 분사기(5)에 하나 이상의 복수개의 가스 유입구(51)가 설치될 수 있으며, 복수개의 분사홀(52)이 설치 될 수 있다. 가스 유입구(51)는 가스 분사기(5)의 상면, 측면, 대각 방향에서 주입 될 수 있다. 가스 분사기(5) 내에는 중공의 영역이 있어 가스가 균일하게 분사 될 수 있도록 공간(53)이 분사홀(52)과 가스 유입구(51) 사이에 위치하여 가스가 분사홀(52)로 분사되기 전에 가스유입구(51)에서 들어온 가스가 공간(53)에 가득 찬 후에 분사홀(52)로 분사 될 수 있다.Referring to FIG. 3, one or more gas inlets 51 may be installed in the gas injector 5, and a plurality of injection holes 52 may be installed. The gas inlet 51 may be injected from the top, side, and diagonal directions of the gas injector 5. There is a hollow area in the gas injector 5 so that the space 53 is located between the injection hole 52 and the gas inlet 51 so that the gas can be uniformly injected so that the gas is injected into the injection hole 52. The gas introduced from the gas inlet 51 may be injected into the injection hole 52 after the gas is filled in the space 53.
도 4를 참조하면, 상기 복수 개의 가스 분사기(5)는 상기 챔버리드(4)에 중심을 기준으로 방사상 또는 중앙퍼지를 중심으로 위치할 수 있다. 상기 복수 개의 가스 분사기(5) 중 적어도 하나 이상은 상기 챔버리드(4)의 중심으로부터 반경방향으로 분사홀(52)이 적어도 하나 이상의 열을 구성하여 형성될 수 있다. 또는 상기 복수 개의 가스 분사기(5) 중 적어도 하나 이상은 상기 챔버리드(4)에서 상기 서셉터(3) 상의 기판(100)으로 복수 개의 분사홀(52)이 형성된 샤워헤드 형태의 가스 분사기(5) 일 수 있다.Referring to FIG. 4, the plurality of gas injectors 5 may be positioned radially or at the center purge with respect to the chamber lead 4. At least one or more of the plurality of gas injectors 5 may be formed by forming at least one row of injection holes 52 in a radial direction from the center of the chamber lead 4. Alternatively, at least one of the plurality of gas injectors 5 may include a shower head-type gas injector 5 in which a plurality of injection holes 52 are formed from the chamber lead 4 to the substrate 100 on the susceptor 3. Can be).
상기 복수 개의 가스 분사기(5)는 챔버리드(4)에 내장될 수도 있고, 챔버리드(4)에 개구부를 형성하여 상기 개구부에 각각의 가스 분사기(5)가 삽입될 수도 있고, 챔버리드(4)에 오목부를 형성하여 상기 오목부에 각각의 가스 분사기(5)가 삽입될 수도 있다.The plurality of gas injectors 5 may be embedded in the chamber leads 4, may form openings in the chamber leads 4, and respective gas injectors 5 may be inserted into the openings, and the chamber leads 4 may be inserted into the chamber leads 4. ), Each gas injector 5 may be inserted into the recess.
도 4을 참조하면, 본 발명의 일 실시 예에 따른 챔버 챔버리드(4)와 복수 개의 가스 분사기(5)를 포함한 기판 처리 장치(1)의 공정순서는 제 1 소스 가스 분사기(S1) → 제 1 퍼지 가스 분사기(P1) → 제 2 소스 가스 분사기(S2) → 제 2 퍼지 가스 분사기(P2) → 반응 가스 분사기(R) → 제 3 퍼지 가스 분사기(P3)로 구성되는 증착 Cycle을 이용한 박막 증착 장치 및 박막 증착 방법일 수 있다. 본 일 실시예에 따른 증착 Cycle의 순서는 상기와 같은 방법일 수도 있고, 그의 반대 방향의 증착 Cycle 순서로도 공정이 이루어질 수 있다.Referring to FIG. 4, the process sequence of the substrate processing apparatus 1 including the chamber chamber lead 4 and the plurality of gas injectors 5 according to an embodiment of the present invention is based on the first source gas injector S1. 1 Thin film deposition using a deposition cycle consisting of a purge gas injector P1 → a second source gas injector S2 → a second purge gas injector P2 → a reactive gas injector R → a third purge gas injector P3 Device and thin film deposition method. The order of the deposition cycle according to the present embodiment may be the above method, or the process may be performed in the order of the deposition cycle in the opposite direction.
도 4을 참조하면, 본 발명의 제 1 실시 예에 따른 기판 처리 공정을 실현하기 위한 장치로서 복수 개의 소스 가스 분사기(S1, S2)를 배치하여, 1 Cycle 또는 1 번의 회전에 복수 개의 소스 가스 분사기(S1, S2)를 기판(100)이 지나가는 것을 특징으로 하는 가스분사장치로 이루어 질 수 있다. 또한, 소스 가스 분사기(S1, S2)와 퍼지 가스 분사기(P1, P2, P3)의 간격은 반응 가스 분사기(R)와 퍼지 가스 분사기(P1, P2, P3)의 간격보다 더 작은 것이 특징일 수 있다. 또한, 공급되는 제 1 소스 가스와 제 2 소스 가스는 동일한 가스를 포함 할 수 있다. 또한, 제 1 소스 가스와 제 2 소스 가스는 유량 또는 유량비가 서로 같지 않을 수 있다.Referring to FIG. 4, a plurality of source gas injectors S1 and S2 are disposed as a device for realizing a substrate processing process according to a first embodiment of the present invention, and thus, a plurality of source gas injectors may be performed in one cycle or one rotation. (S1, S2) may be made of a gas injection device, characterized in that the substrate 100 passes. Also, the distance between the source gas injectors S1 and S2 and the purge gas injectors P1, P2 and P3 may be smaller than the distance between the reaction gas injector R and the purge gas injectors P1, P2 and P3. have. In addition, the supplied first source gas and the second source gas may include the same gas. Also, the first source gas and the second source gas may not have the same flow rate or flow rate ratio.
도 4을 참조하면, 본 발명의 제 1 실시 예에 따른 기판 처리 공정의 소스 가스(Source gas)는 금속 전구체 (Metal Precursor)를 포함 할 수 있고, 반응 가스(Reactant gas)는 질화 가스 또는 산화 가스를 포함 할 수 있고, 퍼지 가스(Purge gas)는 비반응성 가스를 포함 할 수 있다. 구체적으로, 소스 가스는 Ti 함유 전구체를 포함 할 수 있고, 반응 가스는 N 함유 가스를 포함할 수 있다. 구체적으로, 소스 가스는 Zr (또는 Al, Hf, Ta, … 등) 함유 전구체를 포함 할 수 있고, 반응 가스는 산소(oxygen, O) 함유 가스를 포함 할 수 있다.Referring to FIG. 4, a source gas of the substrate treating process according to the first embodiment of the present invention may include a metal precursor, and the reactant gas may be a nitride gas or an oxidizing gas. It may include, the purge gas (Purge gas) may include a non-reactive gas. In detail, the source gas may include a Ti-containing precursor, and the reaction gas may include an N-containing gas. Specifically, the source gas may include a Zr (or Al, Hf, Ta, ..., etc.) containing precursor, the reaction gas may include an oxygen (oxygen, O) containing gas.
도 4을 참조하면, 본 발명의 제 1 실시 예에 따른 기판 처리 공정의 소스 가스는 Si 함유가스(유기실란, 아미노실란 포함)를 포함 할 수 있고, 반응 가스는 질화 가스 또는 산화 가스를 포함 할 수 있고, 퍼지 가스는 비반응성 가스를 포함 할 수 있고, 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 반응 가스는 질소(Nitrogen, N) 또는 산소(oxygen, O) 함유가스를 포함 할 수 있다.Referring to FIG. 4, the source gas of the substrate treating process according to the first embodiment of the present invention may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may include nitriding gas or oxidizing gas. The purge gas may include a non-reactive gas, and specifically, the source gas may include a Si containing gas, and the reactant gas may include nitrogen (Nitrogen, N) or oxygen (oxygen, O) containing gas. can do.
도 4를 참조하면, 본 발명의 공정은 소스 가스 분사기(S1)에서 소스가스(Source gas)는 금속전구체(Ti 함유 전구체)를 포함 할 수 있다. 구체적으로, 소스 가스(Source gas)는 Zr (또는 Al, Hf, Ta, …)등도 포함 할 수 있다. 상기 소스 가스 분사기(S1)에서 분사되는 상기 소스가스는 상기 복수의 기판에 분사되는 제 1 차 소스 가스 공정이 진행 될 수 있다. 상기 소스 가스 분사기(S1)에서 상기 소스가스를 분사하고, 상기 퍼지 가스 분사기(P1)에서 상기 퍼지 가스가 분사된다. 상기 퍼지 가스 분사기(P1)에서 분사된 퍼지 가스는 상기 소스 가스 분사기(S1)에서 분사된 상기 소스 가스의 일부를 제거(퍼지)할 수 있다. 이때, 상기 퍼지 가스 분사기(P1)와 거리가 가장 가까워 많은 양의 퍼지 가스에 노출된 상기 기판의 패턴의 상부는 상기 퍼지 가스의 영향으로 가장 많이 막이 제거(퍼지)가 되고, 상기 퍼지 가스 분사기(P1)과 기판의 패턴 하부와 상기 패턴 측면은 상대적으로 상기 패턴의 상부 보다는 막이 적게 제거 될 수 있다. 이후, 상기 소스 가스 분사기(S2)를 통해 다시 한번 상기 소스 가스가 분사되고, 상기 기판에 제2차 소스 가스 분사 공정이 진행 될 수 있다. 상기 소스가스(Source gas) 즉, 금속전구체(Ti 함유 전구체)를 포함 할 수 있다. 구체적으로, 소스 가스(Source gas)는 Zr (또는 Al, Hf, Ta, …)등도 포함 할 수 있다. Referring to FIG. 4, in the process of the present invention, the source gas in the source gas injector S1 may include a metal precursor (Ti-containing precursor). In detail, the source gas may include Zr (or Al, Hf, Ta, ...). The source gas injected from the source gas injector S1 may be subjected to a first source gas process injected to the plurality of substrates. The source gas is injected by the source gas injector S1, and the purge gas is injected by the purge gas injector P1. The purge gas injected from the purge gas injector P1 may remove (purge) a portion of the source gas injected from the source gas injector S1. At this time, the uppermost part of the pattern of the substrate exposed to a large amount of purge gas because the distance from the purge gas injector P1 is closest to the uppermost part of the pattern is removed (purge), the purge gas injector ( P1) and the lower surface of the pattern and the pattern side of the substrate may be relatively less film than the upper portion of the pattern. Thereafter, the source gas may be injected again through the source gas injector S2, and a second source gas injection process may be performed on the substrate. The source gas may include a metal precursor (Ti-containing precursor). In detail, the source gas may include Zr (or Al, Hf, Ta, ...).
상기 소스가스가 초미세 패턴이 형성된 상기 기판 상에 분사되면, 상기 패턴 상부와 상기 패턴 하부 그리고 상기 패턴 상부와 하부 사이의 측면에도 균일하게 막이 증착이 되어야 스텝커버리지(Step coverage)가 개선 될 수 있다. 상기 기판의 패턴의 상부, 하부, 측면의 막의 높이가 균일해야 상기 기판의 하부까지 막이 채워질 수 있어, 균일한 막이 상기 웨이퍼 패턴사이에 증착이 될 수 있어, 반도체 소자의 동작이 이상 없이 동작 할 수 있다.When the source gas is sprayed onto the substrate on which the ultra fine pattern is formed, step coverage may be improved when the film is uniformly deposited on the upper side of the pattern, the lower side of the pattern, and the side surfaces between the upper side and the lower side of the pattern. . Since the height of the film on the top, bottom, and side of the pattern of the substrate is uniform, the film may be filled up to the bottom of the substrate, so that a uniform film may be deposited between the wafer patterns, so that the operation of the semiconductor device may operate without abnormality. have.
도4를 참조하면, 상기 챔버의 내부에 설치된 기판 지지부에 적어도 하나의 기판을 안착시키는 제 1 단계의 공정을 진행할 수 있다. 이어서, 상기 기판(100)의 상부에 설치된 제 1 소스 가스 분사기(S1)를 통해 소스 가스를 분사하는 제 2 단계를 진행할 수 있다. 이어서, 상기 기판의 상부에 설치된 퍼지 가스 분사기(P1)를 통해 퍼지 가스를 분사하는 제 3 단계의 공정을 진행할 수 있다. 이어서, 상기 기판의 상부에 설치된 제 2 소스 가스 분사기(S2)를 통해 소스 가스를 분사하는 제 4 단계의 공정을 진행 할 수 있다. 상기 기판은 상기 제 2 단계, 상기 제 3 단계, 상기 제 4 단계의 공정을 순차적으로 진행할 수 있다. 상기 공정의 순차적인 진행을 통에 균일한 막을 웨이퍼 패턴의 상부, 측면, 하부까지 균일하게 증착할 수 있다. 본 공정의 소스 가스는 Ti를 함유 가스일 수 있다. 상기 제 1 소스 가스분사기에서 분사되는 소스가스 유량과 상기 제 2 소스 가스분사기에서 분사되는 소스가스 유량은 동일할 수 있고, 상이할 수 있다.Referring to FIG. 4, a first step of mounting at least one substrate on a substrate support provided in the chamber may be performed. Subsequently, a second step of injecting the source gas may be performed through the first source gas injector S1 installed on the substrate 100. Subsequently, a third step of spraying the purge gas may be performed through the purge gas injector P1 provided on the substrate. Subsequently, a fourth step of injecting the source gas through the second source gas injector S2 provided on the substrate may be performed. The substrate may sequentially perform the second, third and fourth processes. Through the sequential progress of the process, a uniform film may be uniformly deposited on the top, side, and bottom of the wafer pattern. The source gas of this process may be a gas containing Ti. The source gas flow rate injected from the first source gas injector and the source gas flow rate injected from the second source gas injector may be the same or may be different.
도 4를 참조하면 상기 챔버리드(4)에 설치된 복수 개의 가스 분사기(5)를 포함한 상기 제 1 소스 가스 분사기(S1), 상기 제 2 소스 가스 분사기(S2), 상기 제 1 퍼지 가스 분사기(P1)는 상기 챔버리드(4)즉, 원형이 되는 상기 챔버리드(4)의 중앙의 한점에서 사방으로 뻗어 나간 모양인 방사상으로 뻗어 나간 모양으로 설치 될 수 있다. 상기 챔버리드(4)에 설치된 상기 제 1 소스 가스 분사기(S1)와 상기 제 1 퍼지 가스 분사기(1)의 중앙에 한 점에서 사방으로 뻗어나간 방사상모양의 상기 챔버리드(4)에서 중앙에 한 점이 위치한 중심을 중심부라고 했을 때, 상기 제 1 소스 가스 분사기와 상기 제 1 퍼지 가스 분사기 의 중심부 간의 거리는 상기 챔버리드(4)의 외곽부 즉, 에지부근을 외곽부라고 한다면, 외곽부 간의 거리 보다 짧을 수 있다. 반대로 에지 부근 즉,외곽부간의 거리는 중심부 간의 거리 보다 길 수 있다. 또한, 상기 가스 분사기(5)간 거리가 짧은(가까운) 표현은 상기 가스 분사기(5)간 거리가 좁다 및 라고 표현 할 수 있고, 상기 가스 분사기(5)간 거리가 긴(멀다) 것은 넓다 라고 표현 할 수 있다.Referring to FIG. 4, the first source gas injector S1, the second source gas injector S2, and the first purge gas injector P1 including a plurality of gas injectors 5 installed in the chamber lid 4. ) May be installed in a radially extending shape that extends in all directions from one point of the center of the chamber lead 4 that is circular. In the center of the first source gas injector (S1) and the first purge gas injector (1) installed in the chamber lead (4) extending in all directions from one point to the center of the radial chamber chamber (4) Assuming that the center where the point is located is the center, the distance between the center of the first source gas injector and the first purge gas injector is greater than the distance between the outer parts of the chamber lid 4, that is, the edge part is the outer part. It can be short. In contrast, the distance near the edges, i.e., the edges, may be longer than the distance between the centers. In addition, the shorter (closer) distance between the gas injectors 5 may be expressed by the distance between the gas injectors 5 being narrower, and the longer (far) distance between the gas injectors 5 being wider. I can express it.
도 5를 참조하면, 본 발명의 일 실시 예에 따른 챔버리드(4)와 복수 개의 가스 분사기(5)를 포함한 기판 처리 장치(1)의 공정순서는 제 1 소스 가스 분사기(S1) → 제 1 퍼지 가스 분사기(P1) → 제 2 소스 가스 분사기(S2) → 제 2 퍼지 가스 분사기(P2) → 반응 가스 분사기(R) → 제 3 퍼지 가스 분사기(P3)로 구성되는 증착 Cycle을 이용한 박막 증착 장치 및 박막 증착 방법일 수 있다. 박막 증착 장치 중에 제 1 소스 가스 분사기(S1)와 제 2 소스 가스 분사기(S2) 사이의 제 1 퍼지 가스 분사기(P1)보다 제 2 퍼지 가스 분사기(P2) 또는 제 3 퍼지가스 분사기(P3)의 가스분사영역이 더 넓을 수 있고, 박막 증착 장치 중에 제 1 소스 가스 분사기(S1)와 제 2 소스 가스 분사기(S2) 사이의 제 1 퍼지 가스 분사기(P1)보다 제 2 퍼지 가스 분사기(P2) 또는 제 3 퍼지가스 분사기(P3)의 가스분사유량이 더 많을 수 있으며, 박막 증착 장치 중에 제 1 소스 가스 분사기(S1)와 제 2 소스 가스 분사기(S2) 사이의 제 1 퍼지 가스 분사기(P1)보다 제 2 퍼지 가스 분사기(P2) 또는 제 3 퍼지가스 분사기(P3)의 가스분사홀의 수량이 더 많은 장치일 수 있다. 제 1 소스 가스 분사기(S1) 또는 제 2 소스 가스 분사기(S2) 보다 반응 가스 분사기(R)의 가스분사영역이 더 넓을 수 있고, 제 1 소스 가스 분사기(S1) 또는 제 2 소스 가스 분사기(S2) 보다 반응 가스 분사기(R)의 가스분사유량이 더 많을 수 있고, 제 1 소스 가스 분사기(S1) 또는 제 2 소스 가스 분사기(S2) 보다 반응 가스 분사기(R)의 가스분사홀의 수량이 더 많은 장치일 수 있다. 또한, 제 1 퍼지 가스 분사기(P1)는 제 2 퍼지 가스 분사기(P2) 또는 제 3 퍼지 가스 분사기(P3)의 사이에 위치한 제 1 소스 가스 분사기(S1)와 제 2 소스 가스 분사기(S2)와의 거리가 더 가까울 수 있다.Referring to FIG. 5, the process sequence of the substrate processing apparatus 1 including the chamber lead 4 and the plurality of gas injectors 5 according to an embodiment of the present invention is the first source gas injector S1 → first. Thin film deposition apparatus using a deposition cycle consisting of a purge gas injector (P1) → a second source gas injector (S2) → a second purge gas injector (P2) → a reactive gas injector (R) → a third purge gas injector (P3) And a thin film deposition method. In the thin film deposition apparatus, the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 of the second purge gas injector P2 or the third purge gas injector P3 The gas injection region may be wider, and the second purge gas injector P2 may be larger than the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 in the thin film deposition apparatus. The gas injection flow rate of the third purge gas injector P3 may be higher than that of the first purge gas injector P1 between the first source gas injector S1 and the second source gas injector S2 in the thin film deposition apparatus. The number of gas injection holes of the second purge gas injector P2 or the third purge gas injector P3 may be higher. The gas injection region of the reaction gas injector R may be wider than the first source gas injector S1 or the second source gas injector S2, and the first source gas injector S1 or the second source gas injector S2 may be larger. The gas injection flow rate of the reaction gas injector R may be higher than that of the reaction gas injector R, and the number of the gas injection holes of the reaction gas injector R may be greater than that of the first source gas injector S1 or the second source gas injector S2. It may be a device. In addition, the first purge gas injector P1 is formed between the first source gas injector S1 and the second source gas injector S2 positioned between the second purge gas injector P2 or the third purge gas injector P3. The distance may be closer.
도 5를 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)로 패턴이 형성된 기판을 증착하는 단계는 제 1 소스 가스 분사기(S1) → 패턴 상부 가스를 퍼지하는 단계(Small purge) → 제 2 소스 가스 분사기(S2) → 패턴 상부 및 패턴 내부를 퍼지하는 단계(Large purge) → 반응 가스 분사기(R) → 패턴 상부 및 패턴 내부를 퍼지하는 단계일 수 있다. 구체적으로는 Ti 함유가스를 패턴 내부 및 상부로 분사하는 단계 → 패턴 상부 가스를 퍼지하는 단계 또는 패턴 내부의 Ti 가스가 충분히 제거되지 않은 단계 → Ti 함유가스를 패턴 내부 및 상부로 분사하는 단계 → 패턴 상부 및 패턴 내부를 퍼지하는 단계 → N 함유가스를 패턴 내부 및 상부로 분사하는 단계 → 패턴 상부 및 패턴 내부를 퍼지하는 단계일 수 있다.Referring to FIG. 5, the depositing of the substrate on which the pattern is formed by the substrate processing apparatus 1 according to an embodiment of the present disclosure may include purging the first source gas injector S1 → the upper pattern gas. → a second source gas injector S2 → purging the upper part of the pattern and the inside of the pattern (Large purge) → a reactive gas injector R → purging the upper part of the pattern and the inside of the pattern. Specifically, the step of injecting the Ti-containing gas into and above the pattern → the step of purging the upper gas of the pattern or the step of not sufficiently removing the Ti gas in the pattern → the step of injecting the Ti-containing gas into and above the pattern → pattern Purging the upper part and the inside of the pattern → spraying the N-containing gas into the upper part and the upper part of the pattern → may purge the upper part and the inside of the pattern.
도 6을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)는 제 1 소스 가스 분사기(S1) → 제 1 퍼지 가스 분사기(P1) → 제 2 소스 가스 분사기(S2) → 제 2 퍼지가스 분사기(P2) → 제 1 반응 가스 분사기(R1) → 제 3 퍼지 가스 분사기(P3) → 제 2 반응 가스 분사기(R2) → 제 4 퍼지 가스 분사기(P4)로 구성되는 증착 Cycle을 이용한 박막 증착 방법일 수 있다.Referring to FIG. 6, the substrate processing apparatus 1 according to the exemplary embodiment may include a first source gas injector S1 → a first purge gas injector P1 → a second source gas injector S2 → a second source gas injector S1. Thin film using a deposition cycle consisting of purge gas injector (P2) → first reaction gas injector (R1) → third purge gas injector (P3) → second reaction gas injector (R2) → fourth purge gas injector (P4) Deposition method.
도 6을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)를 실현하기 위한 장치의 복수 개의 반응 가스 분사기(R1, R2)를 배치하여, 1 Cycle 또는 1 번의 회전에 복수 개의 반응 가스 분사기(R1, R2)를 기판(100)이 지나가게 할 수 있다. 또한, 제 1 반응 가스 분사기(R1)와 제 2 반응 가스 분사기(R2) 사이의 간격은 제 1 반응가스 분사기(R1)와 제 2 퍼지 가스(Purge Gas)분사기(P2) 사이의 간격보다 더 작게(좁게) 할 수 있다. 또는, 제 1 반응 가스 분사기(R1)와 제 2 반응 가스 분사기(R2) 사이의 간격은 제 2 반응가스 분사기(R2)와 제 4 퍼지 가스(Purge Gas)분사기(P4) 사이의 간격보다 더 작게(좁게) 할 수 있다.Referring to FIG. 6, a plurality of reaction gas injectors R1 and R2 of an apparatus for realizing a substrate processing apparatus 1 according to an embodiment of the present invention are disposed, and a plurality of reactions are performed in one cycle or one rotation. The substrate 100 may pass through the gas injectors R1 and R2. Further, the interval between the first reactive gas injector R1 and the second reactive gas injector R2 is smaller than the interval between the first reactive gas injector R1 and the second purge gas injector P2. I can (narrowly) do it. Alternatively, the interval between the first reactive gas injector R1 and the second reactive gas injector R2 is smaller than the interval between the second reactive gas injector R2 and the fourth purge gas injector P4. I can (narrowly) do it.
또한, 제 1 반응 가스 분사기(R1)과 제 2 반응 가스 분사기(R2)는 동일한 가스를 포함하게 할 수 있다. 또한, 제 1 반응 가스 분사기(R1)과 제 2 반응 가스 분사기(R2)는 유량 또는 유량비가 서로 같지 않게 할 수 있다.In addition, the first reactive gas injector R1 and the second reactive gas injector R2 may include the same gas. In addition, the flow rate or the flow rate ratio of the first reaction gas injector R1 and the second reaction gas injector R2 may not be the same.
도 6을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)를 실현하기 위한 장치의 소스 가스는 금속전구체(Ti 함유 전구체)를 포함 할 수 있고, 반응 가스는 질화가스 또는 산화가스(N 함유 가스)를 포함 할 수 있다. 구체적으로, 소스 가스는 Zr (또는 Al, Hf, Ta, … 등) 함유 전구체, 반응 가스는 O 함유 가스를 포함 할 수 있다.Referring to FIG. 6, the source gas of the apparatus for realizing the substrate processing apparatus 1 according to an embodiment of the present invention may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas. (N-containing gas) may be included. Specifically, the source gas may include a Zr (or Al, Hf, Ta, ...) containing precursor, and the reaction gas may include an O-containing gas.
도 6을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)를 실현하기 위한 장치로서 소스 가스는 Si 함유가스 (유기실란, 아미노실란 포함)를 포함 할 수 있고, 반응 가스는 질화가스 또는 산화가스를 포함 할 수 있고, 퍼지 가스는 비반응성 가스를 포함 할 수 있다. 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 반응 가스는 N 또는 O 함유가스를 포함 할 수 있다.Referring to FIG. 6, as an apparatus for realizing a substrate processing apparatus 1 according to an embodiment of the present disclosure, the source gas may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may be nitrided. Gas or oxidizing gas may be included and the purge gas may comprise a non-reactive gas. Specifically, the source gas may include Si-containing gas, and the reaction gas may include N or O-containing gas.
도 7을 참조하면, 소스 가스 분사기 또는 반응 가스 분사기에는 RF전원/RF매처(RF Matcher)(6)가 연결 될 수 있다. RF전원/RF매처(RF Matcher)(6)를 사용하여 챔버(2) 내부의 반응공간 중 일부 공간에 플라즈마를 생성 할 수 있다.Referring to FIG. 7, an RF power source / RF matcher 6 may be connected to the source gas injector or the reactive gas injector. The RF power source / RF matcher 6 may be used to generate plasma in some of the reaction spaces inside the chamber 2.
도 8을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치는 제 1 소스 가스 분사기(S1) → 제 1 퍼지가스 분사기(P1) → 제 2 소스 가스 분사기(S2) → 제 2 퍼지 가스 분사기(P2) → 제 1 반응 가스 분사기(R1) → 제 3 퍼지 사기 분사기(P3) → 제 2 플라즈마 반응 가스 분사기(R2), Plasma 전극 또는 라디칼 분사 → 제 4 퍼지 가스 분사기(P4)로 구성되는 증착 Cycle에서 제 1 반응 가스 분사기(R1) 또는 제 2 반응 가스 분사기(R2)는 Plasma 전극이 설치 또는 라디칼을 분사 할 수 있다.Referring to FIG. 8, the substrate processing apparatus according to the exemplary embodiment may include a first source gas injector S1 → a first purge gas injector P1 → a second source gas injector S2 → a second purge gas injector (P2) → a first reactive gas injector R1 → a third purge fraud injector P3 → a second plasma reactive gas injector R2, a plasma electrode or radical injection → a deposition consisting of a fourth purge gas injector P4 In the cycle, the first reactive gas injector R1 or the second reactive gas injector R2 may be provided with a plasma electrode or spray radicals.
도 8을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)는 복수 개의 반응 가스 분사기(R1, R2)를 배치하여, 1 Cycle 또는 1 번의 회전에 복수 개의 반응 가스 분사기(R1, R2)를 기판(100)이 지나 갈 수 있고, 복수 개의 반응 가스 분사기(R1, R2) 중 어느 하나는 라디칼 가스를 분사하거나, 플라즈마 전극을 설치하거나 또는 라디칼 분사를 포함 할 수 있다.Referring to FIG. 8, the substrate processing apparatus 1 according to an exemplary embodiment may include a plurality of reactive gas injectors R1 and R2, and may include a plurality of reactive gas injectors R1 and one cycle or one rotation. The substrate 100 may pass through R2), and any one of the plurality of reactive gas injectors R1 and R2 may inject a radical gas, install a plasma electrode, or include radical injection.
도 8을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)의 소스 가스는 금속전구체(Ti 함유 전구체)를 포함 할 수 있고, 반응 가스는 질화가스 또는 산화가스(N 함유 가스)를 포함 할 수 있고, 구체적으로, 소스 가스는 Zr (또는 Al, Hf, Ta, … 등) 함유 전구체를 포함 할 수 있고, 반응 가스는 산소(O) 함유 가스를 포함 할 수 있다.Referring to FIG. 8, the source gas of the substrate processing apparatus 1 according to the exemplary embodiment may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas (N-containing gas). In some embodiments, the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas.
도 8을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)의 소스 가스는 Si 함유가스(유기실란, 아미노실란 포함)를 포함 할 수 있고, 반응 가스는 질화가스 또는 산화가스를 포함 할 수 있고, 퍼지 가스는 비반응성 가스를 포함 할 수 있다. 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 제 1 반응 가스와 제 2 반응 가스는 원자량이 상이 할 수 있다. 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 제 1 반응 가스 분사기(R1)는 오존(O3), 제 2 반응 가스 분사기(R2)는 산소(O2) Plasma를 생성 할 수 있다. 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 제 1 반응 가스 분사기(R1)는 산소(O2), 제 2 반응 가스 분사기(R2)는 C와 H를 포함하는 Plasma를 생성 할 수 있다.Referring to FIG. 8, the source gas of the substrate processing apparatus 1 according to an embodiment of the present invention may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may include nitriding gas or oxidizing gas. The purge gas may comprise a non-reactive gas. Specifically, the source gas may include a Si-containing gas, and the first reactant gas and the second reactant gas may have different atomic amounts. In detail, the source gas may include Si-containing gas, and the first reactive gas injector R1 may generate ozone (O 3 ), and the second reactive gas injector R2 may generate oxygen (O 2 ) plasma. . In detail, the source gas may include a Si-containing gas, and the first reactive gas injector R1 may generate oxygen (O 2 ), and the second reactive gas injector R2 may generate plasma including C and H. have.
도 9을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)는 제 1 소스 가스 분사기(S1) → 제 1 퍼지가스 분사기(P1) → 제 1 반응 가스 분사기(R1) → 제 2 퍼지 가스 분사기(P2) → 제 2 반응 가스 분사기(R2) → 제 3 퍼지 가스 분사기(P3)로 구성되는 증착 Cycle을 이용한 박막 증착을 할 수 있다.Referring to FIG. 9, the substrate processing apparatus 1 according to the exemplary embodiment may include a first source gas injector S1 → a first purge gas injector P1 → a first reactive gas injector R1 → a second Thin film deposition using a deposition cycle including a purge gas injector P2 → a second reactive gas injector R2 → a third purge gas injector P3 may be performed.
도 9을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)를 실현하기 위한 장치로서, 복수 개의 반응 가스 분사기(R1, R2)를 배치하여, 1 Cycle 또는 1 번의 회전에 복수 개의 반응 가스 분사기(R1, R2)를 기판(100)이 지나가게 할 수 있다. 또한, 반응 가스 분사기(제 1 반응 가스 분사기(R1), 제 2 반응 가스 분사기(R2)) 사이의 간격은 소스 가스 분사기(제 1 소스 가스 분사기(S1))와 퍼지 가스 분사기(제 1 퍼지 가스 분사기(P1) 또는 제 3 퍼지 가스 분사기(P3))의 간격보다 더 작을 수 있다. 또한, 제 1 반응 가스 분사기(R1)와 제 2 반응 가스 분사기(R2)는 동일한 가스가 포함할 수 있다. 또한, 제 1 반응 가스 분사기(R1)과 제 2 반응 가스 분사기(R2)는 유량 또는 유량비가 서로 같지 않을 수 있다.Referring to FIG. 9, a device for realizing a substrate processing apparatus 1 according to an embodiment of the present invention may include a plurality of reactive gas injectors R1 and R2, and may be arranged in one cycle or one rotation. The substrate 100 may pass through the reactive gas injectors R1 and R2. In addition, the interval between the reactive gas injectors (the first reactive gas injector R1 and the second reactive gas injector R2) is such that the source gas injector (the first source gas injector S1) and the purge gas injector (the first purge gas). It may be smaller than the interval of the injector (P1) or the third purge gas injector (P3). In addition, the first reactive gas injector R1 and the second reactive gas injector R2 may include the same gas. In addition, the first reaction gas injector R1 and the second reaction gas injector R2 may not have the same flow rate or flow rate ratio.
도 9을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)를 실현하기 위한 장치의 소스 가스는 금속전구체(Ti 함유 전구체)를 포함 할 수 있고, 반응 가스는 질화가스 또는 산화가스(N 함유 가스)를 포함 할 수 있고, 구체적으로, 소스 가스는 Zr (또는 Al, Hf, Ta, … 등) 함유 전구체를 포함 할 수 있고, 반응 가스는 산소(O) 함유 가스를 포함 할 수 있다.Referring to FIG. 9, the source gas of the apparatus for realizing the substrate processing apparatus 1 according to an embodiment of the present invention may include a metal precursor (Ti-containing precursor), and the reaction gas may be a nitride gas or an oxidizing gas. (N-containing gas), and specifically, the source gas may include a Zr (or Al, Hf, Ta, ..., etc.)-Containing precursor, and the reaction gas may include an oxygen (O) -containing gas. have.
도 9을 참조하면, 본 발명의 일 실시 예에 따른 기판 처리 장치(1)를 실현하기 위한 장치의 소스 가스는 Si 함유가스 (유기실란, 아미노실란 포함)를 포함 할 수 있고, 반응 가스는 질화가스 또는 산화가스를 포함 할 수 있고, 퍼지 가스는 비반응성 가스를 포함 할 수 있고, 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 반응 가스는 N 또는 O 함유가스를 포함 할 수 있고, 구체적으로, 소스 가스는 Si 함유가스를 포함 할 수 있고, 제 1 반응 가스 분사기(R1)은 오존(O3), 제 2 반응 가스 분사기(R2)는 산소(O2) Plasma를 생성 할 수 있다. 구체적으로, 반응 가스(Source gas)는 Si 함유가스를 포함 할 수 있고, 제 1 반응 가스 분사기(R1)은 산소(O2), 제 2 반응 가스 분사기(R2)는 C와 H를 포함하는 Plasma를 생성할 수 있다.Referring to FIG. 9, the source gas of the apparatus for realizing the substrate processing apparatus 1 according to an embodiment of the present invention may include Si-containing gas (including organic silane and aminosilane), and the reaction gas may be nitrided. Gas or oxidizing gas, the purge gas may comprise a non-reactive gas, specifically, the source gas may comprise a Si containing gas, the reaction gas may comprise a N or O containing gas For example, the source gas may include Si-containing gas, and the first reactive gas injector R1 may generate ozone (O 3 ), and the second reactive gas injector R2 may generate oxygen (O 2 ) plasma. have. Specifically, the reaction gas (Source gas) may include a Si-containing gas, the first reaction gas injector (R1) is oxygen (O 2 ), the second reaction gas injector (R2) Plasma containing C and H Can be generated.
본 발명은 1 Cycle 또는 1 번 이상의 회전을 통해 증착 공정 및 트리트먼트 공정을 실시할 수 있으며, 수 회를 반복적인 회전을 할 수 있다. 또한, 동일 소스의 증착막 및 상이한 소스의 증착막을 동시 또는 순차적으로 증착 할 수 있다. 또한, 2회는 동일 증착막, 3회는 상이한 막으로 비순차적으로 증착 할 수 있다. 또한, 동일한 막 또는 상이한 막을 번갈아가며 증착 할 수 있다.In the present invention, the deposition process and the treatment process may be performed through one cycle or one or more rotations, and may be repeatedly rotated several times. In addition, deposition films of the same source and deposition films of different sources may be deposited simultaneously or sequentially. In addition, two times may be deposited in the same deposition film and three times in a different film out of order. It is also possible to alternately deposit the same film or different films.
본 발명의 기술적 사상은 상기 실시 예에 따라 구체적으로 기술되었으나, 상기 실시 예는 그 설명을 위한 것이며, 그 제한을 위한 것이 아님을 주지해야 한다. 또한, 본 발명의 기술분야에서 당업자는 본 발명의 기술 사상의 범위 내에서 다양한 실시 예가 가능함을 이해할 수 있을 것이다.Although the technical spirit of the present invention has been described in detail according to the above embodiment, it should be noted that the above embodiment is for the purpose of description and not for the purpose of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

Claims (18)

  1. 챔버; chamber;
    상기 챔버 하부에 위치되고 적어도 하나의 기판이 안치되는 서셉터;A susceptor positioned below the chamber and having at least one substrate placed therein;
    상기 서셉터 상부에 위치된 챔버리드;A chamber lead positioned above the susceptor;
    상기 챔버리드에 설치되어 소스 가스를 분사하는 제 1 소스 가스 분사기;A first source gas injector installed in the chamber lid to inject a source gas;
    상기 챔버리드에 설치되어 소스 가스를 분사하는 제 2 소스 가스 분사기;A second source gas injector installed in the chamber lid to inject a source gas;
    상기 챔버리드에 설치되어 퍼지 가스를 분사하는 제 1 퍼지 가스 분사기는 상기 제 1 및 제 2 소스 가스 분사기 사이에 설치된 것을 특징으로 하는 기판 처리 장치.And a first purge gas injector installed in the chamber lid to inject a purge gas, between the first and second source gas injectors.
  2. 제 1 항에 있어서,The method of claim 1,
    상기 소스 가스는 Si 함유가스, Ti 함유 전구체, Zr, Al, Hf, 및 Ta 중 어느 하나를 포함하는, 기판 처리 장치.And the source gas comprises any one of a Si containing gas, a Ti containing precursor, Zr, Al, Hf, and Ta.
  3. 제 1 항에 있어서,The method of claim 1,
    상기 챔버리드에 설치된 상기 제 1 소스 가스 분사기, 상기 제 2 소스 가스 분사기, 상기 제 1 퍼지 가스 분사기는 상기 챔버리드의 중심부를 기준으로 외곽부 방향으로 방사상 설치된 것을 특징으로 하는 기판 처리 장치.The substrate processing apparatus of claim 1, wherein the first source gas injector, the second source gas injector, and the first purge gas injector disposed in the chamber lead are radially installed in an outward direction with respect to the center of the chamber lead.
  4. 제 3 항에 있어서,The method of claim 3, wherein
    상기 챔버리드에 설치된 상기 제 1 소스 가스 분사기와 상기 제 1 퍼지 가스 분사기의 중심부 간의 거리는 상기 제 1 소스 가스 분사기와 상기 제 1 퍼지 가스 분사기의 외곽부 간의 거리 보다 짧은 것을 특징으로 하는 기판 처리 장치.And a distance between a center of the first source gas injector and the first purge gas injector provided in the chamber lid is shorter than a distance between the first source gas injector and an outer portion of the first purge gas injector.
  5. 제 1 항에 있어서,The method of claim 1,
    상기 챔버리드에 설치되어 퍼지 가스를 분사하는 제 2 퍼지 가스 분사기와 제 3 퍼지 가스 분사기를 더 포함하는, 기판 처리 장치.And a second purge gas injector and a third purge gas injector installed in the chamber lid to inject purge gas.
  6. 제 5 항에 있어서, The method of claim 5,
    상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기 영역이 더 넓은 것을 특징으로 하는 기판 처리 장치.And a second purge gas injector or a third purge gas injector area is wider than the first purge gas injector.
  7. 제 5 항에 있어서, The method of claim 5,
    상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기의 가스분사유량이 더 많은 것을 특징으로 하는 기판 처리 장치.And a gas injection flow rate of the second purge gas injector or the third purge gas injector is higher than that of the first purge gas injector.
  8. 제 1 항에 있어서,The method of claim 1,
    상기 챔버리드에 설치되어 반응 가스를 분사하는 복수개의 반응 가스 분사기를 더 포함하는, 기판 처리 장치. And a plurality of reactive gas injectors installed in the chamber leads to inject reaction gases.
  9. 제 8 항에 있어서,The method of claim 8,
    상기 반응 가스는 질소 함유 가스 또는 산소 함유 가스를 포함하는, 기판 처리 장치.And the reactive gas comprises a nitrogen containing gas or an oxygen containing gas.
  10. 제 8 항에 있어서,The method of claim 8,
    상기 반응 가스 분사기에 플라즈마 전극을 포함하는, 기판 처리 장치.And a plasma electrode in said reactive gas injector.
  11. 챔버의 내부에 설치된 기판 지지부에 적어도 하나의 기판을 안착시키는 제 1 단계;A first step of mounting at least one substrate on a substrate support provided in the chamber;
    상기 기판의 상부에 설치된 제 1 소스 가스 분사기를 통해 소스 가스를 분사하는 제 2 단계;A second step of injecting a source gas through a first source gas injector provided on the substrate;
    상기 기판의 상부에 설치된 제 1 퍼지가스 분사기를 통해 퍼지 가스를 분사하는 제 3 단계;A third step of injecting purge gas through a first purge gas injector provided on the substrate;
    상기 기판의 상부에 설치된 제 2 소스가스 분사기를 통해 소스 가스를 분사하는 제 4 단계;를 포함하며,And a fourth step of injecting the source gas through a second source gas injector installed on the substrate.
    상기 기판은 상기 제 2 단계, 상기 제 3 단계, 상기 제 4 단계의 공정을 순차적으로 진행하는 기판 처리 방법.The substrate processing method of the second step, the third step, the fourth step to proceed sequentially.
  12. 제 11 항에 있어서,The method of claim 11,
    상기 소스 가스는 Si 함유가스, Ti 함유 전구체, Zr, Al, Hf, 및 Ta 중 어느 하나를 포함하는 기판 처리 방법. And the source gas comprises any one of a Si containing gas, a Ti containing precursor, Zr, Al, Hf, and Ta.
  13. 제 11 항에 있어서,The method of claim 11,
    상기 챔버리드에 설치되어 반응 가스를 분사하는 복수개의 반응 가스를 분사하는 제 5단계를 더 포함하는 기판 처리 방법.And a fifth step of injecting a plurality of reaction gases installed in the chamber leads to inject reaction gases.
  14. 제 13 항에 있어서,The method of claim 13,
    상기 반응 가스는 질소 함유 가스 또는 산소 함유 가스를 포함하는, 기판 처리 방법.The reaction gas includes a nitrogen-containing gas or an oxygen-containing gas.
  15. 제 13 항에 있어서,The method of claim 13,
    상기 반응 가스 분사기에서 플라즈마를 생성 또는 라디칼 분사를 포함하는, 기판 처리 방법.Generating plasma or radical injection in said reactive gas injector.
  16. 제 11 항에 있어서,The method of claim 11,
    상기 챔버리드에 설치되어 퍼지 가스를 분사하는 제 2 퍼지 가스 분사기와 제 3 퍼지 가스 분사기를 더 포함하는, 기판 처리 방법.And a second purge gas injector and a third purge gas injector installed in the chamber lid to inject purge gas.
  17. 제 16 항에 있어서, The method of claim 16,
    상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기 영역이 더 넓은 것을 특징으로 하는 기판 처리 방법.And a second purge gas injector or a third purge gas injector area is wider than the first purge gas injector.
  18. 제 16 항에 있어서, The method of claim 16,
    상기 제 1 퍼지 가스 분사기보다 제 2 퍼지가스 분사기 또는 제 3 퍼지가스 분사기의 가스분사유량이 더 많은 것을 특징으로 하는 기판 처리 방법.And a gas injection flow rate of the second purge gas injector or the third purge gas injector is higher than that of the first purge gas injector.
PCT/KR2016/004024 2015-04-28 2016-04-18 Substrate treatment device and substrate treatment method WO2016175488A1 (en)

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Publication number Priority date Publication date Assignee Title
JP2009147372A (en) * 2006-03-28 2009-07-02 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
KR20100078333A (en) * 2008-12-30 2010-07-08 주식회사 테스 Substrate processing apparatus
KR20130133622A (en) * 2012-05-29 2013-12-09 주성엔지니어링(주) Substrate processing apparatus and substrate processing method
KR20140049170A (en) * 2012-10-16 2014-04-25 주식회사 원익아이피에스 Substrate processing apparatus
KR20140101049A (en) * 2013-02-07 2014-08-19 주식회사 원익아이피에스 Substrate Processing Apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009147372A (en) * 2006-03-28 2009-07-02 Hitachi Kokusai Electric Inc Method of manufacturing semiconductor device
KR20100078333A (en) * 2008-12-30 2010-07-08 주식회사 테스 Substrate processing apparatus
KR20130133622A (en) * 2012-05-29 2013-12-09 주성엔지니어링(주) Substrate processing apparatus and substrate processing method
KR20140049170A (en) * 2012-10-16 2014-04-25 주식회사 원익아이피에스 Substrate processing apparatus
KR20140101049A (en) * 2013-02-07 2014-08-19 주식회사 원익아이피에스 Substrate Processing Apparatus

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