WO2016175458A1 - Procédé de formation de grille métallique et dispositif à semi-conducteurs comportant une grille métallique - Google Patents

Procédé de formation de grille métallique et dispositif à semi-conducteurs comportant une grille métallique Download PDF

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Publication number
WO2016175458A1
WO2016175458A1 PCT/KR2016/003093 KR2016003093W WO2016175458A1 WO 2016175458 A1 WO2016175458 A1 WO 2016175458A1 KR 2016003093 W KR2016003093 W KR 2016003093W WO 2016175458 A1 WO2016175458 A1 WO 2016175458A1
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WIPO (PCT)
Prior art keywords
metal mesh
forming
substrate
network
cnt
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PCT/KR2016/003093
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English (en)
Korean (ko)
Inventor
김태근
이병룡
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고려대학교 산학협력단
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Publication of WO2016175458A1 publication Critical patent/WO2016175458A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions

Definitions

  • the present invention relates to a metal mesh, and more particularly, to a metal mesh forming method and a semiconductor device having a metal mesh.
  • Metal mesh structure refers to the formation of a network (network) shape using a metal.
  • Metal mesh films applied to display devices are pointed out by visibility problems and moire (Moire) phenomenon.
  • the visibility problem is a phenomenon in which a metal pattern is visible in a product implementation. This problem can be solved by blackening a black material on the pattern or by minimizing the line width (thickness) of the pattern to less than 1.8 ⁇ m. In other words, producing fine particles is a key technology.
  • the moiré phenomenon is a phenomenon in which the mesh pattern overlaps two sheets, and the grid pattern of the display is added to it, and it looks like a wave, which is a problem of pattern design.
  • This is the key technology for the design of a pattern that transmits electrical signals well, and the moire phenomenon does not occur when the ultra fine line width of 1 ⁇ m or less is realized. Therefore, fabrication of metal mesh with nano sized line width is essential.
  • a metal mesh structure In order to form such a metal mesh structure, various methods are used. For example, a method of dispersing nanostructures (carbon nanotubes, silver nanowires, etc.) on a solution and then applying them onto a substrate, forming a metal mesh through a photolithography process, roll printing, gravure printing, and offset printing The method of forming a metal mesh using printing methods, such as these, etc. are mentioned.
  • the method of applying the nanostructure on the substrate has the advantage that it is possible to form a nano-scale metal mesh structure, but there is a limit to lower the resistance value because the particles are not organically connected to each other, or nanoparticles There is a problem that a variation in transmittance or a haze of the formed metal mesh occurs due to aggregation of these.
  • the method of forming the metal mesh through photolithography has a problem that not only the process is complicated, but also the process cost and time consuming.
  • the implementation of metal mesh with nano size line width through photolithography process has various technical difficulties.
  • a method of forming a metal mesh using a conventional printing method has a problem that the mesh line width cannot be reduced.
  • the problem to be solved by the present invention is to provide a metal mesh forming method having a nano-size line width in a low-cost process and a semiconductor device having a metal mesh manufactured thereby.
  • Metal mesh forming method for solving the above problems, (a) forming a network interconnecting a nano-size material (nano material) longer than the width on the substrate; (b) forming a patterned layer on the substrate so that a portion of the network is submerged; (c) removing the network to form a pattern corresponding to the network on the pattern layer; (d) depositing a metal on the substrate to form a metal mesh corresponding to the pattern; And (e) removing the pattern layer to leave only the metal mesh on the substrate.
  • nano-size material nano material
  • a network may be formed by a spray method or a dipping method.
  • a pattern layer may be formed by depositing any one of oxide compounds including SiO 2 and Ga 2 O 3 on the substrate on which the network is formed. .
  • a pattern layer may be removed by applying a BOE (Buffered Oxide Etch) method.
  • the nanomaterial according to an embodiment of the present invention may be any one of CNT, Au, Ag, Cu, Si, GaN, ZnO, SiO 2 TiO 2 .
  • the step (c) is a CNT by applying an O 2 plasma treatment method or an oxygen heat treatment method, Can be removed.
  • the step (c) is a metal having a higher reduction potential than the CNT on the pattern layer;
  • the CNT may be removed by applying an O 2 plasma treatment method or an oxygen heat treatment method.
  • the metal mesh forming method according to an embodiment of the present invention may further comprise forming a transparent electrode layer formed of any one of CNT, graphene, ITO on the substrate on which the metal mesh is formed. have.
  • the semiconductor device according to the preferred embodiment of the present invention for solving the above problems is formed by the metal mesh forming method of any one of the above-described methods.
  • the present invention is formed by forming a network with a nano-sized material on a substrate including a light emitting device or a light receiving device, and forming a pattern layer so that a part of the network is submerged, and then removing the nanomaterial forming the network from the pattern layer, By forming a nano-sized pattern on the layer, depositing a metal thereon, and removing the pattern layer, a metal mesh having a nano-sized line width may be formed on the substrate.
  • the present invention can not only form a metal mesh having a nano-size line width in a simple process, but also have a width corresponding to the line width of a desired metal mesh, compared to a metal mesh forming method using a conventional photolithography process.
  • the line width of the metal mesh can be easily adjusted, so that the visibility problem and the moire phenomenon can be easily solved.
  • FIGS. 1A to 1D are process charts illustrating a metal mesh forming method according to a preferred embodiment of the present invention.
  • FIG. 2 is a view showing the structure of the CNT which is an example of the nanomaterial used to form the metal mesh in accordance with a preferred embodiment of the present invention.
  • FIG 3 is a diagram illustrating an example of further forming a metal layer on a pattern layer.
  • FIG. 4 is a diagram illustrating an example in which a transparent electrode layer is further formed on a metal mesh.
  • FIGS. 1A to 1D are process diagrams illustrating a metal mesh forming method according to a preferred embodiment of the present invention.
  • FIGS. 1A to 1D a method of forming a metal mesh 150 according to an exemplary embodiment of the present invention will be described.
  • a substrate 110 on which a metal mesh is to be formed is prepared.
  • the nanomaterials 120-1 to 120-n are formed thereon to form a network 120.
  • the nanomaterial applied to the present invention is defined as a material having a length longer than the diameter as a nano-sized material
  • a representative example is a carbon nanotube (CNT)
  • Au, Ag, Cu, Si, GaN , Nanowires such as ZnO, SiO 2 , TiO 2 , and nanorods may be applied.
  • the line widths of the metal mesh 150 formed on the substrate 110 are determined according to the widths of the nano wires and the nano bars, the width and the material of the nano wires and the nano bars are not only the line widths of the desired metal mesh 150 but also described later. It is selected in consideration of the process. In a preferred embodiment of the present invention to be described later to form a metal mesh 150 using CNT.
  • the substrate 110 of the present invention is a concept that generically refers to the structure on which the metal mesh 150 is to be formed. That is, the substrate of the present invention may be a light emitting device or a light receiving device, for example, a light emitting device having an n-GaN layer, an active layer, and a p-GaN layer formed on a semiconductor substrate 110, or an n-GaN layer, an active layer, and p-.
  • the GaN layer and the ITO transparent electrode layer may be sequentially light emitting devices.
  • the metal mesh 150 of the present invention may be formed on the P-GaN layer or the ITO transparent electrode layer.
  • the nano-materials arranged on the substrate 110 are connected to each other defined as the network 120, in a preferred embodiment of the present invention in a manner to form a network 120, a mixture of nano-materials
  • the dipping method of dipping and drying the substrate 110 in an air or a spray method of spraying and drying a solution mixed with nanomaterials onto the substrate 110 was used, but the network 120 composed of nanomaterials was used. If there is no way that can be formed on the substrate 110 is not limited.
  • the pattern layer 130 is formed on the substrate 110.
  • the pattern layer 130 is used to transfer the shape of the network 120 formed of nanomaterials, and as illustrated in FIG. 1B, only a portion of the nanomaterials forming the network 120 is locked, rather than the width of the nanomaterial.
  • the pattern layer 130 is formed by depositing a pattern layer forming material on the substrate 110 at a low thickness.
  • the network 120 is formed of CNTs, and an oxide compound such as SiO 2 or Ga 2 O 3 is deposited thereon to form a pattern layer 130.
  • the thickness of the pattern layer 130 should be adjusted according to the width of the nanomaterial forming the network 120.
  • the diameters of the CNTs forming the network 120 vary from 1 nm to 25 nm, as well as the CNTs of the single wall structure shown in A of FIG. 2, as well as the Multi- shown in B of FIG. 2. CNTs with a wall structure can also be applied.
  • the pattern layer 130 is formed to have a thickness of about 50% to 80% of the CNT width in consideration of the width of the CNT.
  • the material forming the pattern layer 130 is not limited to an oxide compound as long as it can selectively remove nanomaterials inside the pattern layer 130 in a process to be described later.
  • the nanomaterial network 120 is formed of an oxide compound such as ZnO, SiO 2 , TiO 2, or the like, a material other than the oxide compound may be used in consideration of a process of removing the nano material network 120 later. It is preferable to form the pattern layer 130.
  • the network 120 formed in the pattern layer 130 is removed to form the same pattern 140 as the shape of the network 120 in the pattern layer 130.
  • various methods may be applied depending on the nanomaterial forming the network 120.
  • 400 degrees of O 2 plasma treatment may be used.
  • the CNT was removed by sublimation with carbon dioxide by applying an oxygen heat treatment method at the above temperature.
  • the network 120 when the network 120 is formed of a nanomaterial other than the above-described CNT, the network 120 formed of the nanomaterial may be removed using an etching solution corresponding to each nanomaterial as shown in Table 1 below. .
  • Nano wire / nano rod Etching solution Ni H3PO4: HNO3: CH3COOH: H2O
  • Au AquaRegia HCl: HNO3
  • Ag NH4OH: H2O2: CH3OH
  • Cu 150g
  • Sodiumpersulfate: 1000ml H2O) Si HF: HNO3: H2O
  • GaN Acid / H2O2 OR KOH
  • ZnO with HCl, H3PO4 and NH4Cl) SiO 2 (HF) TiO 2 (H3PO4-H2O2)
  • the metal to form the metal mesh 150 on the pattern layer 130 as shown in FIG. 1D By depositing the metal to fill the voids (ie, the metal mesh pattern) of the network 120 is removed, the metal mesh 150 is formed on the substrate 110, the pattern layer 130 from the substrate 110 ), The metal mesh 150 is finally formed on the substrate 110.
  • the pattern layer 130 is removed by performing wet etching with a solution corresponding to the type of the material forming the pattern layer 130.
  • the pattern layer 130 is formed by using a buffered oxide etching (BOE) method. Removed.
  • BOE buffered oxide etching
  • CNT is applied by O 2 plasma treatment or oxygen heat treatment at a temperature of 400 degrees or more. Was removed by sublimation with carbon dioxide.
  • a metal having a higher reduction potential than CNT on the patterned layer, such as Au, Pt, Ag and Cu, the CNT is more smoothly oxidized during the heat treatment.
  • a pattern layer is formed to a thickness of about 50% to 60% of the CNT width, and a reduction potential is higher than CNT, such as Au, Pt, Ag, and Cu, up to about 80% of the CNT width thereon.
  • CNT such as Au, Pt, Ag, and Cu
  • the metals such as Au, Pt, Ag, and Cu deposited on the CNT fall into the pattern formed on the pattern layer, and when the metal is deposited on the pattern layer to form the metal mesh, the inside of the pattern Metals such as Au, Pt, Ag, and Cu in the metal mesh together with the deposited metal to form a metal mesh, it is easy to apply to the existing process does not need a separate removal process.
  • the current dispersion and the formation of a conductive material of a transparent material such as CNT, graphene, and ITO are further formed on the metal mesh formed on the substrate.
  • the current injection effect can be further improved.
  • the metal mesh 150 formed by the method of forming the metal mesh 150 described above may be provided in a semiconductor device such as a light emitting device and a light receiving device.
  • the semiconductor device including the metal mesh 150 illustrated in FIG. 1D may be manufactured in a structure in which the metal mesh 150 is formed on the substrate 110 including the light emitting layer therein.
  • the semiconductor device including the metal mesh 150 illustrated in FIG. 1D may be manufactured in a structure in which the metal mesh 150 is formed on the substrate 110 including the light receiving layer therein.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)

Abstract

La présente invention permet de : former un réseau à partir d'un matériau de dimensions nanométriques sur un substrat comprenant un élément d'émission de lumière ou un élément de réception de lumière ; former une couche de motif de façon à intégrer une partie du réseau et retirer ensuite un nanomatériau de sorte à former un réseau de la couche de motif, ce qui permet de former un motif de dimensions nanométriques à former au niveau de la couche de motif ; et retirer la couche de motif après dépôt du métal sur le motif, ce qui permet de former une grille métallique ayant une largeur de ligne de taille nanométrique sur le substrat. Par conséquent, par comparaison avec un procédé de formation d'une grille métallique au moyen d'un traitement de photolithographie classique, la présente invention permet de former, par le biais d'un traitement simple, une grille métallique ayant une largeur de ligne de dimensions nanométriques, et permet également de régler facilement la largeur de ligne de la grille métallique à l'aide d'un nanomatériau ayant une largeur correspondant à une largeur de ligne souhaitée de la grille métallique, ce qui permet de résoudre de manière simple un problème de visibilité et un phénomène de moiré.
PCT/KR2016/003093 2015-04-28 2016-03-25 Procédé de formation de grille métallique et dispositif à semi-conducteurs comportant une grille métallique WO2016175458A1 (fr)

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KR1020150059717A KR101766828B1 (ko) 2015-04-28 2015-04-28 메탈 메쉬 형성 방법 및 메탈 메쉬를 구비하는 반도체 소자
KR10-2015-0059717 2015-04-28

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020080581A1 (fr) * 2018-10-15 2020-04-23 한국로봇융합연구원 Conducteur extensible pour dispositif pouvant être porté, dispositif de connexion utilisant ledit conducteur extensible, électrode flexible, élément électronique et leur procédé de fabrication

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102071051B1 (ko) 2018-01-03 2020-01-30 연세대학교 산학협력단 산화물 반도체 박막 트랜지스터 및 그 제조방법

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JP2011192396A (ja) * 2010-03-11 2011-09-29 Panasonic Electric Works Co Ltd 透明導電膜形成用基板、透明導電膜付き基板、透明導電膜の製造方法
KR20120124346A (ko) * 2011-05-03 2012-11-13 삼성전자주식회사 신축 가능한 전도성 패턴 형성용 조성물, 이를 이용한 신축 가능한 전도성 패턴의 제조방법 및 신축 가능한 전도성 전극을 포함하는 전자 소자
KR20130058664A (ko) * 2010-03-04 2013-06-04 가디언 인더스트리즈 코퍼레이션. 카본 나노튜브들 및 나노 와이어 복합체들을 포함하는 투명 전도성 코팅들을 포함하는 전자 디바이스들 및 그 제조방법들
KR101500192B1 (ko) * 2013-11-13 2015-03-06 주식회사 포스코 그래핀층을 포함하는 투명전극 및 이의 제조방법

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KR20110079117A (ko) * 2009-12-31 2011-07-07 고려대학교 산학협력단 전기방사법을 이용한 기판의 패턴구조 형성방법
KR20130058664A (ko) * 2010-03-04 2013-06-04 가디언 인더스트리즈 코퍼레이션. 카본 나노튜브들 및 나노 와이어 복합체들을 포함하는 투명 전도성 코팅들을 포함하는 전자 디바이스들 및 그 제조방법들
JP2011192396A (ja) * 2010-03-11 2011-09-29 Panasonic Electric Works Co Ltd 透明導電膜形成用基板、透明導電膜付き基板、透明導電膜の製造方法
KR20120124346A (ko) * 2011-05-03 2012-11-13 삼성전자주식회사 신축 가능한 전도성 패턴 형성용 조성물, 이를 이용한 신축 가능한 전도성 패턴의 제조방법 및 신축 가능한 전도성 전극을 포함하는 전자 소자
KR101500192B1 (ko) * 2013-11-13 2015-03-06 주식회사 포스코 그래핀층을 포함하는 투명전극 및 이의 제조방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020080581A1 (fr) * 2018-10-15 2020-04-23 한국로봇융합연구원 Conducteur extensible pour dispositif pouvant être porté, dispositif de connexion utilisant ledit conducteur extensible, électrode flexible, élément électronique et leur procédé de fabrication
KR20200042576A (ko) * 2018-10-15 2020-04-24 한국로봇융합연구원 웨어러블 디바이스용 신축성 전도체, 그 신축성 전도체를 이용한 연결장치, 유연전극, 전자소자 및 그 제조방법
KR102137805B1 (ko) 2018-10-15 2020-07-27 한국로봇융합연구원 웨어러블 디바이스용 신축성 전도체, 그 신축성 전도체를 이용한 연결장치, 유연전극, 전자소자 및 그 제조방법

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KR101766828B1 (ko) 2017-08-09

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