WO2016163192A1 - Appareil de luminothérapie - Google Patents

Appareil de luminothérapie Download PDF

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Publication number
WO2016163192A1
WO2016163192A1 PCT/JP2016/057056 JP2016057056W WO2016163192A1 WO 2016163192 A1 WO2016163192 A1 WO 2016163192A1 JP 2016057056 W JP2016057056 W JP 2016057056W WO 2016163192 A1 WO2016163192 A1 WO 2016163192A1
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Prior art keywords
light emitting
light
emission
layer
emitting diode
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PCT/JP2016/057056
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English (en)
Japanese (ja)
Inventor
和央 吉田
範幾 立花
大谷　博史
敦 今村
一樹 加藤
貴之 飯島
峻 濱口
一 都司
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コニカミノルタ株式会社
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Priority to JP2017511505A priority Critical patent/JP6702314B2/ja
Publication of WO2016163192A1 publication Critical patent/WO2016163192A1/fr

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    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00—Radiation therapy
    • A61N5/06—Radiation therapy using light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure

Definitions

  • the present invention relates to a phototherapy device, and more particularly, a light including a light emitting light emitting diode capable of stably irradiating an affected area with a therapeutic light beam having a broad emission wavelength and less radiation angle dependency.
  • the present invention relates to a therapeutic device.
  • treatment with light irradiation so-called phototherapy
  • phototherapy treatment for a specific disease.
  • treatment for pain relief such as stiff shoulders and low back pain and thin hair treatment is performed by irradiation with red light or infrared light.
  • red light or infrared light By irradiating this infrared ray, for example, near-infrared light, by expanding the blood vessels, increasing tissue blood flow, suppressing the excitement of the sympathetic nervous system, activating cellular tissues and promoting wound healing, It is well known to work on inflammatory cytokines and analgesics to produce anti-inflammatory and analgesic effects.
  • the near-infrared region in the vicinity of a wavelength of 800 to 900 nm which absorbs less water, hemoglobin, and melanin, has excellent biological permeability, and suppresses inflammation and relieves pain by an action mechanism different from the thermal effect.
  • treatment by irradiation with blue light or ultraviolet light is performed.
  • phototherapy is a combination of photochemotherapy with light irradiation.
  • PDT Photo Dynamic Therapy
  • a photosensitive therapeutic agent known as a photochemotherapeutic agent is supplied to the treated area of the body from the outside or the inside.
  • a phototherapy device used for the phototherapy as described above a plurality of light emitting means in which inorganic light emitting diodes (hereinafter abbreviated as LEDs) are arranged on the surface, and each of the light emitting means emits light.
  • LEDs inorganic light emitting diodes
  • a phototherapy device for performing treatment such as remission of inflammatory pain with near-infrared light
  • Patent Document 1 a phototherapy device for performing treatment such as remission of inflammatory pain with near-infrared light
  • the phototherapy device disclosed in Patent Document 1 the light intensity distribution and the temperature distribution on the treatment light irradiation surface are made uniform, and the treatment light is uniformly irradiated to the entire irradiation surface serving as a treatment site. It is said that the effect can be enhanced.
  • the LED used as the light source generally has a sharp maximum emission band of the emission spectrum, when applied to the light treatment as it is, the light intensity easily varies with respect to the affected area, and effective light treatment. From this point of view, there was a problem. Moreover, since it is a light-emitting element with poor flexibility because it includes a diffusion plate and the like due to the influence of heat generated by the LED itself and the LED light source, for example, it is uniform with respect to the curved surface structure of the affected area to be treated. In order to irradiate the light, it is necessary to arrange many LEDs, and there is a problem that the light emission control of many LEDs becomes complicated.
  • a phototherapy device using an organic light-emitting diode (hereinafter referred to as an organic electroluminescence element, OLED, or organic EL element) as a light source has been proposed.
  • a device for phototherapy uses an organic EL element as an organic light-emitting semiconductor in a region to be treated in a mobile device used for therapeutic or cosmetic treatment, and performs treatment by irradiating light (for example, a patent).
  • a phototherapy device having an organic EL element that emits light having a therapeutic wavelength and a control module that controls light emission conditions of the organic EL element is disclosed (for example, see Patent Document 3).
  • the light irradiation system can be controlled to a desired color characteristic by selectively selecting a plurality of organic EL elements or controlling light emission by a control module.
  • it is a phototherapy device using an organic electroluminescence device, and a flexible substrate is used for monitoring a flexible conformal medical light source and blood properties (for example, the level of CO, oxygen, or bilirubin).
  • Related diagnostic devices and therapeutic phototherapy devices for animals such as psoriasis and some forms of cancer have been disclosed (see, for example, US Pat.
  • the device is certainly devised to uniformly irradiate the affected area, but still has the following problems. .
  • the organic EL element has a wide half-value width of the maximum emission band of the emission spectrum as compared with the LED. Is composed of multiple organic functional layers, and therefore has an emission spectrum profile depending on the angle of light emission, for example, the angle dependency that the emission maximum wavelength and the full width at half maximum tend to vary depending on the emission angle. It turned out to be a factor of the variation in the case.
  • the phototherapy it is an important condition to stably irradiate light of an appropriate wavelength with respect to a target disease, and the above angle dependency becomes an obstacle in performing stable phototherapy. Yes.
  • the present invention has been made in view of the above-mentioned problems, and a solution to the problem is light capable of stably irradiating an affected area with a light beam for phototherapy having a broad emission wavelength and less radiation angle dependency.
  • An object of the present invention is to provide a phototherapy device comprising a light emitting diode for irradiation.
  • the present inventor has a specific emission wavelength region, and even if the light irradiation angle is changed, the fluctuation range and the half-value width of the emission maximum wavelength of the emission spectrum are in a specific condition.
  • the present inventors have found that a phototherapeutic apparatus that can stably irradiate an affected part with a therapeutic light beam can be obtained by a phototherapeutic apparatus having a light emitting light emitting diode within the range, and the present invention has been achieved. .
  • a phototherapy device comprising a light emitting light emitting diode having an emission wavelength in a wavelength range of 400 to 2000 nm, The phototherapy device, wherein the light emitting diode for light irradiation satisfies the following conditions 1 and 2.
  • Condition 1 emission maximum wavelength ( ⁇ max 0 ° ) of the maximum emission band in the emission spectrum observed at the front position of the light emitting light emitting diode and emission maximum of the maximum emission band in the emission spectrum observed at an angle inclined at 30 degrees.
  • ) of the difference from the wavelength ( ⁇ max 30 ° ) is less than 50 nm.
  • Condition 2 observed at the front position of the light emitting diode for light irradiation 1.
  • the half-value width of the maximum emission band in the emission spectrum and the half-value width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees are each 20 nm or more. 2.
  • a half-value width of a maximum emission band in an emission spectrum observed at a front position of the light emitting light emitting diode is 50 nm or more.
  • the light emitting diode for light irradiation has a grid electrode, a light extraction film, or an internal scattering layer disposed on a light extraction surface side, according to any one of items 1 to 3, Phototherapy device.
  • a phototherapeutic device comprising a light-treatment light-emitting diode capable of stably irradiating an affected area with a therapeutic light beam with a broad emission wavelength, less radiation angle dependency Can be provided.
  • light therapy requires light having an arbitrary wavelength and intensity. Therefore, it is important to use an irradiation light source that emits light having a required wavelength and intensity, not only from the front but also from an oblique direction, particularly an irradiation light source having a planar light emitting surface.
  • the emitted light from the light emitting layer can be scattered, and the viewing angle dependency due to the thin film multilayer film can be suppressed.
  • a similar effect can be obtained by providing a light extraction film or an internal scattering layer on the light emitting surface side.
  • the light emitting light emitting diode by forming a plurality of light emitting layers, it is possible to adjust optical characteristics such as a required wavelength, a half width, and an intensity. Furthermore, the heat generation during phototherapy can be suppressed to prevent the occurrence of burns and the like, and safe treatment can be performed.
  • the reason for this is that in the light emitting diode for light irradiation, a structure in which two or more organic functional layer units including a light emitting layer or a light emitting layer are stacked is used, whereby an anode as a first electrode and a cathode as a second electrode. The distance between the electrodes becomes longer.
  • the cathode as the second electrode is formed using a metal material having a film thickness of 100 nm or more, and the surface thereof is rough. Therefore, if the film thickness between the anode and the cathode is thin, leakage occurs and abnormal heat generation occurs. Cause.
  • the organic electroluminescence element applied to the present invention has two or more organic layer or organic functional layer units laminated, so that the distance between the anode as the first electrode and the cathode as the second electrode is increased. It becomes wider and the concern about abnormal heat generation can be reduced. This is an effective means for preventing abnormal heat generation in a flexible light source that has a high risk of leakage due to bending.
  • FIG. 2A is a graph showing an example of emission spectral characteristics (comparative examples) of the emitted lights L1, L2, and L3 shown in FIG.
  • FIG. 3A is a graph showing an example of emission spectrum characteristics (invention) of the emitted lights L1, L2 and L3 shown in FIG.
  • FIG. 3A Schematic which shows an example of the state which applied the phototherapy apparatus of this invention which has flexibility at the time of phototherapy to the affected part of a curved surface
  • Schematic which shows an example of the method of measuring the light emission spectrum characteristic when the light radiation angle of the light emitting diode for light irradiation prescribed
  • FIG. 1 Schematic sectional view showing an LED light emitting device (embodiment 1) using an inorganic light emitting diode (LED) as an example of a light emitting light emitting diode as a light source
  • Sectional drawing which shows an example of the whole structure of the organic electroluminescent device (embodiment 2) used suitably as a light emitting diode for light irradiation concerning this invention
  • Schematic sectional view showing an example (embodiment 3) of a configuration of an organic EL element having two light emitting layers
  • Schematic sectional view showing another example of the configuration of an organic EL element having two light emitting layers (tandem configuration, embodiment 4)
  • Schematic sectional view showing another example of the configuration of an organic EL element having two light emitting layers (independent drive configuration, embodiment 5)
  • FIG. 1 Schematic sectional view showing an LED light emitting device (embodiment 1) using an inorganic light emitting diode (LED) as an example of a light emit
  • FIG. 10 is a schematic cross-sectional view showing an example (embodiment 6) of a light emitting light emitting diode having a light extraction film on the light extraction surface of the organic EL element shown in FIG.
  • FIG. 10 is a schematic cross-sectional view showing another example (embodiment 7) of a light emitting light emitting diode having a light extraction film on the light extraction surface of the organic EL element shown in FIG.
  • the phototherapy device of the present invention includes a light emitting light emitting diode having an emission wavelength in a wavelength range of 400 to 2000 nm, and the light emitting light emitting diode is 1) Condition 1: Front position of the light emitting light emitting diode. The absolute value of the difference between the maximum emission band wavelength ( ⁇ max 0 ° ) in the emission spectrum observed at 1 and the maximum emission band wavelength ( ⁇ max 30 ° ) in the emission spectrum observed at an angle of 30 degrees.
  • ⁇ max (
  • condition 2 the half width of the maximum emission band in the emission spectrum observed at the front position of the light emitting light emitting diode
  • the half width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees is 20 nm or more, respectively.
  • Therapy device is a broad emission wavelength, a beam of light for the treatment is less emission angle dependency, can be stably irradiated to the tumor. This feature is a technical feature common to or corresponding to the claimed invention.
  • the half-value width of the maximum emission band in the emission spectrum observed at the front position of the light emitting light emitting diode is 50 nm or more. It is preferable from the viewpoint that the variation in the amount of irradiation light source with respect to the affected part can be further reduced and stable phototherapy can be performed.
  • light emitting diodes for light irradiation are arranged on a flexible substrate, so that flexibility can be imparted as a phototherapy device, and light that is stably fitted to the shape of an affected part having various curved surfaces. This is a preferred embodiment from the viewpoint that an irradiation surface can be formed and a high phototherapy effect can be obtained.
  • disposing a grid electrode, a light extraction film, or an internal scattering layer on the light extraction surface side of the light emitting diode for light irradiation can obtain a broader emission spectrum having a wide half-value width, and more stable phototherapy. From the viewpoint that can be applied.
  • the light emitting light emitting diode an organic electroluminescence element is applied, and further, the light emitting light emitting diode has a structure having two or more light emitting layers, and the emission spectrum becomes broader, and From the viewpoint of being able to suppress the angle dependence of the emission spectrum, and in addition to being able to prevent the adverse effects of heat on the affected area during phototherapy with high-intensity light emission and enable treatment in a low-temperature environment This is a preferred embodiment.
  • a photochemotherapeutic agent together with the light emitting diode for light irradiation according to the present invention from the viewpoint of further enhancing the phototherapy effect.
  • ⁇ is used to mean that the numerical values described before and after it are included as the lower limit value and the upper limit value.
  • the phototherapy device of the present invention includes a light emitting light emitting diode having an emission wavelength in a wavelength range of 400 to 2000 nm, and the light emitting diode satisfies the following conditions 1 and 2 simultaneously.
  • Condition 1 emission maximum wavelength ( ⁇ max 0 ° ) of the maximum emission band in the emission spectrum observed at the front position of the light emitting light emitting diode and emission maximum of the maximum emission band in the emission spectrum observed at an angle inclined at 30 degrees.
  • ) of the difference from the wavelength ( ⁇ max 30 ° ) is less than 50 nm
  • Condition 2 The half width of the maximum emission band in the emission spectrum observed at the front position of the light emitting diode for light irradiation and the half width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees are each 20 nm or more. Be.
  • a condition 1 As a light emission characteristic of the light emitting light emitting diode provided in the phototherapy device of the present invention, as a condition 1, with respect to one light emitting point P as a reference, from the position in front of the affected area, that is, from the light emitting light emitting diode surface When each emission spectrum is observed at a position where a perpendicular to the affected surface intersects and at a position where irradiation light emitted at an angle of 30 ° with respect to the light emitting point P from the light emitting diode surface intersects the affected area.
  • ) is less than 50 nm, ie, to the affected area, the light of the light irradiation emitting diodes surface-release Even when the angle is varied within the range of 0 ⁇ 30 °, it is characteristic shift width of the emission maximum wavelength is less fluctuation width of less than 50nm, ⁇ max (
  • the emission spectrum is preferably a single peak with one emission band.
  • condition 2 in the same manner as described above, the half-value width of the maximum emission band in the emission spectrum observed at the front position and the half-value width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees Is 20 nm or more. That is, even if the light emission angle of the light emitting diode surface for light irradiation is changed from 0 to 30 ° with respect to the affected part, a broad light emission band having a half width of the emission spectrum of 20 nm or more can be maintained.
  • Stable light treatment can be performed by reducing the range of variation in the amount of irradiation light during light treatment.
  • the full width at half maximum of the maximum emission band in the emission spectrum observed at the front position is 50 nm or more.
  • an upper limit of a half value width it is preferable that it is about 200 nm or less in general.
  • the half-value width of the maximum emission band in the emission spectrum observed at the front position and the half-value width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees are both 20 nm or more.
  • the half-value width of the emission band as used in the present invention is defined as the width (nm) of the wavelength at which the relative emission intensity of the maximum emission band in the emission spectrum is 50% of the maximum value (maximum emission intensity at ⁇ max).
  • the interval between two points of the maximum intensity of the emission intensity is the full width at half maximum (FWHM, Full Width at Half Maximum), and the half is half width at half maximum (HWHM, Half Width at Half Maximum)
  • FWHM full width at half maximum
  • HWHM Half Width at Half Maximum
  • FIG. 1 is a schematic diagram for explaining a half-value width in an emission spectrum of a light emitting light emitting diode.
  • the graph shown in FIG. 1 shows an emission spectrum of a light emitting light emitting diode, for example, with a spectral radiance meter CS-1000 manufactured by Konica Minolta, Inc. (ultraviolet region) to visible light region to infrared region (wavelength of 400 to 2000 nm).
  • the light emission wavelength (nm) is plotted on the horizontal axis, and the light emission intensity f is plotted on the vertical axis to create a light emission intensity profile (light emission band distribution diagram).
  • the wavelength (nm) at the maximum emission intensity fmax of the created emission intensity profile is set as the maximum emission wavelength ( ⁇ max), and the wavelength width (nm) at the emission intensity (1 / 2fmax) at which the maximum emission intensity fmax is 50%. And the full width at half maximum (also referred to as hw).
  • FIG. 2A and FIG. 2B are schematic diagrams showing an example of emission spectrum characteristics which are comparative examples when the light emission angle in the light emitting light emitting diode is changed.
  • FIG. 2B is a graph showing respective emission spectra of the emitted lights L1, L2 and L3 shown in FIG. 2A, and does not have a normal light emitting diode (1), for example, an effective light scattering means.
  • the light emission maximum wavelength ( ⁇ max 0 ° ) in the vertical light irradiation L1 of the light emitting diode (1) is L2 with an irradiation angle of 15 ° and L3 with an irradiation angle of 30 °.
  • the emission maximum wavelength ( ⁇ max 30 ° ) is shifted by 50 nm or more as an absolute value.
  • the shift width of the emission maximum wavelength in the range of 0 to 30 ° is 50 nm or more, the wavelength of the irradiation light at the time of the light treatment varies, which hinders the light treatment under the optimum conditions.
  • the half-value widths hw 0 ° , hw 15 ° , and hw 30 ° of the respective emission bands become narrower as the irradiation angle becomes larger, and the half-value width becomes less than 20 nm.
  • the half-value width is less than 20 nm in this way, for example, the emission spectrum as shown by L3 becomes a very sharp emission spectrum, so that when the radiation angle is increased by phototherapy, the fluctuation of the irradiation energy amount increases. As a result, stable phototherapy cannot be performed under high energy conditions.
  • FIG. 3A and FIG. 3B are schematic diagrams showing an example of emission spectrum characteristics satisfying the conditions defined in the present invention when the light emission angle of the light emitting light emitting diode is changed.
  • the emission spectrum characteristics of the light emitting light emitting diode illustrated in FIGS. 3A and 3B are as follows.
  • the half-value widths hw 0 ° , hw 15 ° and hw 30 ° of the maximum emission band of each emission spectrum are each 20 nm. It is characterized by maintaining such a wide half-value width.
  • the radiation surface of the applied light emitting light emitting diode is matched to the shape of the affected part, and even when the light emitting light emitting diode is curved, a stable phototherapy effect can always be obtained.
  • FIG. 4 is a schematic view showing an example of a state in which the phototherapy device of the present invention having flexibility is arranged in the vicinity of a curved affected area during phototherapy.
  • phototherapy is performed on the affected part (2) having a curved surface by a light emitting diode (1) for light irradiation in which an organic functional layer (4) including a light emitting layer is formed on a flexible substrate (3).
  • the affected part (2) having a curved surface can be stably irradiated with the emitted light (L), thereby enabling efficient phototherapy.
  • the radius of curvature (R) of the light emitting diode (1) for light irradiation is a characteristic that can be 20 mm or less.
  • FIG. 5 shows an example of a method for measuring the emission spectrum characteristic when the light irradiation angle of the light emitting light emitting diode defined in the present invention is changed.
  • the emission spectrum is measured using a spectrophotometer (SP), for example, a spectral radiance meter CS-1000 manufactured by Konica Minolta, Inc. (ultraviolet region) to visible light region to infrared region (wavelength region of 400 to 2000 nm).
  • SP spectrophotometer
  • the light emission wavelength (nm) is plotted on the horizontal axis and the light emission intensity f is plotted on the vertical axis to create a light emission intensity profile.
  • the maximum emission wavelength ( ⁇ max 0 ° ) and the full width at half maximum (hw 0 ° ) of the maximum emission band are obtained.
  • a slit (S) is provided on the light emitting surface side of the light emitting light emitting diode (1), and the radiated light within a specific range is measured.
  • the slit gap or the light emission area can be appropriately set to an optimum condition.
  • the distance between the light emitting surface of the light emitting light emitting diode (1) and the spectrophotometer (SP) is preferably set within a range of 2 to 10 cm.
  • the condition B shown in FIG. 5 has the same configuration as the condition A shown in FIG. 5 and is a spectrophotometer arranged in a direction immediately below the light emitting point (P) of the light emitting light emitting diode (1) inclined by 15 °. From (SP), the emission maximum wavelength ( ⁇ max 15 ° ) and the half width (hw 15 ° ) of the maximum emission band are obtained.
  • the spectrophotometer (SP) arranged in the direct downward direction from the light emitting point (P) of the light emitting light emitting diode (1) tilted by 30 ° has the maximum emission band.
  • the light emission maximum wavelength ( ⁇ max 30 ° ) and the half width (hw 30 ° ) are obtained.
  • means for satisfying the conditions 1 and 2 defined in the present invention is not particularly limited, but it is preferable to combine the respective means described later in detail, alone or in combination.
  • ) to less than 50 nm is not particularly limited, but in particular, it is preferable to use a light emitting light emitting diode composed of a multilayer organic functional layer, and to construct at least two light emitting layers. .
  • a light emitting layer with two or more layers for example, as shown in Embodiment 2 of FIG. 8 described later, two light emitting layers (21 and 22) are arranged adjacent to each other, and each light emitting layer is arranged.
  • the light-emitting dopant used in the above the light-emitting maximum wavelength ( ⁇ max) in the maximum light-emitting band can be stabilized even when the radiation angle is changed.
  • an intermediate layer containing the host compound used in any one of the light emitting layers may be provided between two or more light emitting layers.
  • the light emitting layer and the following organic functional layer are used.
  • Two organic functional layer units (U1, U2) composed of the above layers are stacked, and the light emitting layer (21) and the light emitting layer (22) are arranged at positions spaced apart by a certain distance. Even if changes, the light emission maximum wavelength ( ⁇ max) can be stabilized.
  • the two or more light emitting layers (for example, 21 and 22) in the structure shown in FIG. 9 or FIG. 10 may be composed of the same kind of light emitting dopant, or each light emitting layer may have a different dopant.
  • the structure to contain may be sufficient.
  • the half-value width of the maximum emission band in the emission spectrum observed at the front position of the light emitting diode for light irradiation specified in Condition 2 and the half-value width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees are respectively
  • a method for realizing a broad emission spectrum of 20 nm or more is not particularly limited, but means for broadening the emission spectrum characteristic of light emitted from the light emitting surface of the light emitting light emitting diode may be applied. preferable.
  • a grid electrode may be used as an electrode on the light emitting surface side (for example, an anode electrode)
  • a method of forming an electrode having surface scattering using a printing method such as a screen method, a photolithographic method or the like, or a light extraction film on a light emitting surface of a light emitting light emitting diode, for example, an outcoupling film (Hereinafter referred to as “OCF”) can be applied.
  • a light scattering film containing scattering particles (for example, organic fine particles or inorganic fine particles) in the layer, a film having a concavo-convex structure on the surface, or the like can be applied.
  • An internal scattering layer can also be applied.
  • the surface roughness of the upper electrode or the lower electrode for example, the surface roughness Ra of the transparent electrode or the like located on the light emitting surface side is preferably 1 nm or more, preferably Includes a method of 5 nm or more.
  • a substrate having a surface roughness of 1 nm or more, preferably 5 nm0 or more can be used.
  • it can achieve by forming into a film at the temperature which crystallizes metal oxide electrodes, such as ITO.
  • the growth mechanism of the thin film can be utilized, and a method of forming the electrode on a thin film made of a material having a surface free energy smaller than that of the constituent material of the electrode can be mentioned.
  • the organic functional layer unit has a structure having two or more units, that is, a tandem structure. The reason is that when the electrode surface becomes rough, the upper electrode of one unit and the lower electrode of the other unit are in contact with each other, and sudden death due to leakage is likely to occur, but this electrode is increased by increasing the film thickness. It is possible to prevent leaks in between.
  • FIG. 6 is a cross-sectional view showing a configuration example (embodiment 1) of an LED light emitting device using an inorganic light emitting diode (LED) that is a light emitting light emitting diode as a light source.
  • LED inorganic light emitting diode
  • an LED light emitting device (301) includes an LED light source (302), a light guide (304), a reflector (305), and a diffuser plate (for emitting emitted light (L) in a wide range and uniformly. 306).
  • the light guide (304) for example, an acrylic plate can be used, and in the present invention, scattering particles are formed in the layer as an outcoupling film for increasing the light extraction efficiency on the diffusion plate (306).
  • an LED light source (302) that emits light (L) emitted from an LED light-emitting device (301) of an arbitrary wavelength may be used, or a light emitting material having an arbitrary light emission wavelength.
  • An LED light source (302) using a diffusion plate (306) containing a luminescent substance having an arbitrary emission wavelength is disposed on the upper surface or the lower surface of the diffusion plate (306).
  • the white LED light source (302) can be converted into an arbitrary color by using a color filter installed on the upper or lower surface of the diffuser plate (306) or a diffuser plate (306) having a color filter function to convert white light.
  • a method of obtaining light emission of a wavelength may be used.
  • an organic EL element is further applied to the LED described above as the light emitting diode for light irradiation.
  • the maximum emission band in the emission spectrum is broader than that of the LED, and the emission maximum wavelength of the maximum emission band in the emission spectrum specified in Condition 1 or It is preferable from the viewpoint that a wide half-value width can be easily realized.
  • a highly flexible resin substrate or the like can be applied, and excellent flexibility can be imparted to the light emitting diode for light irradiation. As a result, it can be fitted to various shapes of the affected area having a curved surface. , Can be arranged in a stable form.
  • the organic EL element has an advantage that there is almost no heat generation during phototherapy and there is no risk of burns and the like.
  • FIG. 7 is a cross-sectional view showing an example of the entire configuration including a sealing structure of an organic EL element (EL, embodiment 2) suitably used as a light emitting light emitting diode according to the present invention.
  • EL organic EL element
  • the organic EL element (EL) according to the present invention preferably has a structure in which an organic functional layer unit including at least two light emitting layers is laminated on a flexible substrate (3).
  • FIG. 7 shows a first electrode (5, anode) constituting a pair of electrodes on a substrate (3), for example, a flexible substrate, and a first organic functional layer group (6) thereon. And an organic functional layer unit (4) composed of the light emitting layer (7) and the second organic functional layer group (8).
  • a second electrode (9, cathode) is formed on the organic functional layer unit (4), and the first electrode (5) to the second electrode (9) constitute a light emitting unit.
  • An upper part of the second electrode (9) is provided with a sealing adhesive layer (10) and a sealing substrate, preferably a flexible sealing substrate (11), so as to cover at least the organic functional layer unit.
  • An organic EL element (EL) is formed.
  • the first electrode (5) is formed of a transparent electrode, so that the emitted light (L) emitted from the light emitting point (h) of the light emitting unit is a transparent electrode. It can be taken out from the first electrode (5) side.
  • the organic EL element (EL) according to the present invention is characterized in that the emission wavelength is in the range of 400 to 2000 nm. By having such a wide emission wavelength range, light having an emission wavelength suitable for organic EL treatment can be selected as needed. Such control of the emission wavelength can be realized by selecting the kind of the light emitting compound (light emitting dopant) used in the light emitting layer or combining two or more kinds of light emitting compounds.
  • Embodiment 3 (Laminated structure of organic EL element having two light emitting layers: Embodiment 3)
  • the organic EL element shown in FIG. 8 is a schematic cross-sectional view showing the configuration of the organic EL element (Embodiment 3) in which two light emitting layers, which are one aspect of the organic EL element applicable to the present invention, are arranged at adjacent positions. is there.
  • the organic EL element (EL) having the structure shown in FIG. 8 has a transparent anode (5) formed on a substrate (3), preferably a flexible substrate (3), on which a hole injection layer (
  • the first organic functional layer group (6) is formed by stacking the HIL) and the hole transport layer (HTL).
  • HIL hole injection layer
  • On the first organic functional layer group (6) two light emitting layers, a first light emitting layer (21), and a second light emitting layer (22) are laminated adjacently to form a light emitting layer group (7). It is composed.
  • a second organic functional layer group (8) in which an electron transport layer (ETL) and an electron injection layer (EIL) are stacked is formed on the light emitting layer group (7), and a cathode (9) is provided as the uppermost layer. ing.
  • ETL electron transport layer
  • EIL electron injection layer
  • the light-emitting layer of the organic EL element is formed of a light-emitting dopant (for example, a phosphorescent compound or a fluorescent compound) described later in detail and a host compound.
  • the light emitting layer group (7) has at least two light emitting layers (in FIG. 8, an example of a two layer configuration is described), and each of the light emitting layers (21 and 22).
  • the light emitting layer has a light emitting maximum wavelength. Angle dependency cannot be suppressed.
  • An intermediate layer is provided between the first light emitting layer (21) and the second light emitting layer (22), and the first light emitting layer (21) or the second light emitting layer (22) is provided in the intermediate layer. It may be configured to contain the host compound used in (1).
  • FIG. 9 is a schematic cross-sectional view showing an organic EL element (embodiment 4) having two organic functional layer units and having a tandem configuration.
  • the organic EL element (EL) shown in FIG. 9 has a structure in which a transparent anode (5) is formed on a substrate (3), preferably a flexible substrate, and a first hole injection layer ( HIL1) and a first hole transport layer (HTL1) are stacked, a first light emitting layer (21) is stacked thereon, and further, a first electron transport layer (ETL1) and a first
  • the first organic functional layer unit 1 (U1) is configured by laminating the electron injection layer (EIL1).
  • an intermediate connector layer (23) is formed on the first organic functional layer unit 1 (U1), and the first organic functional layer unit 1 (U1) is formed thereon via the intermediate connector layer (23). ), A second hole injection layer (HIL2) and a second hole transport layer (HTL2) are stacked, and a second light emitting layer (22) is stacked thereon, and further On top of this, a second electron transport layer (ETL2) and a second electron injection layer (EIL2) are laminated to constitute a second organic functional layer unit 2 (U2). Finally, the cathode (9) is provided on the top layer.
  • HIL2 hole injection layer
  • HTL2 second hole transport layer
  • EIL2 second electron injection layer
  • EIL2 second electron injection layer
  • the first light emitting layer (21) and the second light emitting layer (22) are arranged at a certain distance, even if the light emitting light emitting diode has an inclination, the light emission maximum is achieved.
  • the angle dependency of the wavelength can be suppressed.
  • the light-emitting dopants may be the same type or different types.
  • the light emitting dopant constituting each light emitting layer may be a single type or a mixture of two or more types.
  • FIG. 10 is a schematic cross-sectional view showing an organic EL element (embodiment 5) having two organic functional layer units and having an independently driven configuration having two applied voltages.
  • the structure of the organic EL element (EL) shown in FIG. 10 is the same as that shown in FIG. 9, in which a transparent anode (5) is formed on a substrate (3), preferably a flexible substrate, and the first is formed thereon.
  • the hole injection layer (HIL1) and the first hole transport layer (HTL1) are stacked, the first light emitting layer (21) is stacked thereon, and the first electron transport layer is further formed thereon.
  • (ETL1) and the first electron injection layer (EIL1) are stacked to constitute the first organic functional layer unit 1 (U1).
  • the intermediate electrode (24) is formed on the first organic functional layer unit 1 (U1), and the second hole injection layer (HIL2) and the second hole are formed thereon as in FIG.
  • a transport layer (HTL2) is stacked, a second light emitting layer (22) is stacked thereon, and a second electron transport layer (ETL2) and a second electron injection layer (EIL2) are further formed thereon.
  • the second organic functional layer unit 2 (U2) is laminated.
  • the cathode (9) is provided on the top layer.
  • the angle dependency of the light emission maximum wavelength can be relaxed even if the light emitting light emitting diodes are inclined.
  • the first light emitting layer (21) and the second light emitting layer (22) have the same or different types of light emitting dopants. Moreover, as a light emitting dopant which comprises each light emitting layer, only 1 type may be sufficient, or 2 or more types may be mixed and comprised.
  • the half width of the maximum emission band in the emission spectrum observed at the front position and the half width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees are each 20 nm or more.
  • a preferred means of broadening the emission spectrum and achieving the desired half-width is: 1) A method of forming an electrode having a surface scattering property by using a grid electrode as a light emitting surface side electrode using a printing method such as an inkjet method, a screen method, or a photolith method, 2) A method of providing, for example, an outcoupling film (hereinafter referred to as OCF) as a light extraction film on the light emitting surface of the light emitting diode. 3) a method of applying an internal scattering layer, Etc.
  • OCF outcoupling film
  • the grid electrode is composed of conductive fine metal wires.
  • the shape of the grid electrode is not limited to a lattice shape, and various shapes of grids such as a stripe shape, a honeycomb structure shape, and a mesh shape can be used. From the viewpoint of obtaining uniform conductivity regardless of the position, a grid having a periodic shape located on the entire surface of the organic EL element is preferable.
  • the line width dw of the fine metal wires constituting the grid electrode is preferably in the range of 10 to 200 ⁇ m, and the height dh is preferably in the range of 0.1 to 10.0 ⁇ m.
  • the aperture ratio of the grid electrode is preferably 80% or more from the viewpoint of enhancing transparency.
  • An aperture ratio is an area ratio which the area
  • the aperture ratio of a grid electrode in which fine metal wires having a line width of 100 ⁇ m and a line interval of 1 mm are formed in a stripe shape or a lattice shape is 90%.
  • Examples of the conductive metal material that can be used for the fine metal wires constituting the grid electrode include gold, silver, copper, iron, cobalt, nickel, chromium, and alloys thereof. From the viewpoint of low resistance, silver or copper is preferable, and silver is more preferable.
  • the grid electrode is formed by applying a coating solution containing metal nanoparticles, metal complexes, etc. using the above metal material by letterpress printing method, intaglio printing method, stencil printing method, screen printing method, ink jet method, ink jet parallel line drawing method, etc. It can form by apply
  • the ink jet parallel line drawing method uses a coffee stain phenomenon in which when the coating liquid is applied in a line shape, the coating liquid flows from the center to the end of the line and solidification of the end proceeds. This is a method of forming two parallel lines from a line.
  • the light scattering film can be provided on the light emitting surface of the organic EL element.
  • the light scattering film has a function of scattering light passing through the film. When the light before passing through the light scattering film is compared with the light after passing through the light scattering film, the light after passing through the light scattering film is more diffused, and the half width of the maximum emission band in the emission spectrum is reduced. A broader emission spectrum can be obtained.
  • the organic EL element emits light inside a layer having a refractive index higher than that of air (for example, within a refractive index range of about 1.6 to 2.1), and about 15% to 20% of the light generated in the light emitting layer. It is generally said that only the light can be extracted. This is because light incident on the interface (interface between the resin substrate and the air) at an angle ⁇ greater than the critical angle causes total reflection and cannot be extracted outside the device, or between the transparent electrode or the light emitting layer and the resin substrate. This is because light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the side surface of the device.
  • a light scattering film is provided on the organic EL element.
  • the film having the light scattering layer is also referred to as a light extraction film, and the light extraction film is also referred to as an outcoupling film (OCF).
  • a method of forming irregularities on the surface of the film substrate to prevent total reflection at the resin substrate and the air interface for example, US Pat. No. 4,774,435), concentrating the substrate.
  • a method for forming a reflection surface on the side surface of the element for example, Japanese Patent Application Laid-Open No. 1-220394
  • a method of forming an antireflection film by introducing a flat layer having a refractive index for example, Japanese Patent Laid-Open No.
  • Japanese Patent Laid-Open No. 2001-202827 a method of forming a diffraction grating between any one of the substrate, the transparent electrode layer and the light emitting layer (including between the substrate and the outside)
  • Japanese Patent Laid-Open No. 11-283951 a method of providing an organic layer or a scattering layer having a high refractive index than the substrate between the substrate and the light emitting element and the like.
  • the OCF organic EL device according to the present invention
  • the OCF organic EL device
  • a microlens film for example, a microlens film, a lenticular film, a light having many microlens-like structures provided on the light extraction side on the film (3).
  • examples thereof include a light scattering film containing scattering fine particles, a diffusion film whose surface has been processed into random irregularities, an internal refractive index distribution type film, and a light scattering film containing a diffraction grating layer.
  • JP-A-2001-33783 JP-A-2001-56461, JP-A-6-18706, JP-A-10-20103, JP-A-11-160505, JP-A-11-305010, Japanese Laid-Open Patent Publication No. 11-326608, Japanese Laid-Open Patent Publication No. 2000-121809, Japanese Laid-Open Patent Publication No. 2000 Mention may be made of films described in 180611 and JP 2000-338310 Patent Publication. In particular, it is preferable to use a light-scattering film mixed with fine particles that are inexpensive and can be mass-produced.
  • FIG. 11 shows an organic EL element having a light-scattering film having a concavo-convex structure on the surface as a light extraction film on the light extraction surface of the organic EL element shown in FIG.
  • the organic functional layer unit (the first organic functional layer unit U1 and the second organic functional layer unit U2), the electrode configuration, and the like are described in FIG.
  • the light-scattering film (25) having a fine concavo-convex structure on the surface is disposed on the surface of the transparent substrate (3) which is the same as the organic EL element and on the extraction surface side of the organic EL element.
  • the change width of the light emission maximum wavelength ( ⁇ max) can be made less than 50 nm, and the front position of the organic EL element
  • the half-value width of the maximum emission band in the emission spectrum observed in the above and the half-value width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees can each be 20 nm or more, and the emission characteristics defined in the present invention Can be realized.
  • FIG. 12 shows an organic EL device having a light scattering film containing scattering particles as a light extraction film on the light extraction surface of the organic EL device shown in FIG.
  • the first organic functional layer unit U1 and the second organic functional layer unit U2 and the electrode configuration are the same as those of the organic EL element shown in FIG.
  • a light scattering film (26) containing light scattering fine particles is disposed on the surface of the transparent substrate (3) which is the element take-out surface side.
  • the change width of the light emission maximum wavelength ( ⁇ max) can be made less than 50 nm, and the front position of the organic EL element
  • the half-value width of the maximum emission band in the emission spectrum observed in the above and the half-value width of the maximum emission band in the emission spectrum observed at an angle inclined by 30 degrees can each be 20 nm or more, and the emission characteristics defined in the present invention Can be realized.
  • organic functional layer unit including a light emitting layer sandwiched between a pair of electrodes and a sealing member is provided on a substrate
  • organic EL element a configuration in which an organic functional layer unit including a light emitting layer sandwiched between a pair of electrodes and a sealing member is provided on a substrate
  • organic functional layer unit What is comprised by a group is called an organic functional layer unit.
  • the anode (5) as the first electrode is formed on the substrate (3) from below, and then, for example, a hole injection layer, An organic functional layer group 1 (6) composed of a hole transport layer and the like, and a light emitting layer (7), for example, an organic functional layer group 2 (8) composed of an electron transport layer, an electron injection layer and the like are laminated.
  • the organic functional layer unit (4) is constituted.
  • a cathode (9) as a second electrode, a sealing adhesive layer (10), and a sealing substrate (11) are provided on the upper part.
  • Anode / organic functional layer unit [organic functional layer group 1 (hole injection transport layer) / light emitting layer / organic functional layer group 2] / cathode (ii) Anode / organic functional layer unit [organic functional layer group 1 ( Hole injection / transport layer) / light emitting layer / organic functional layer group 2 (hole blocking layer / electron injection / transport layer)] / cathode (iii) anode / organic functional layer unit [organic functional layer group 1 (hole injection / transport layer) / Electron blocking layer) / light emitting layer / organic functional layer group 2 (hole blocking layer / electron injection transport layer)] / cathode (iv) anode / organic functional layer unit [organic functional layer group 1 (hole injection layer / positive) Hole transport layer) / light emitting layer / organic functional layer group 2 (electron transport layer / electron injection layer)] / cathode (v) anode / organic functional layer unit [organic functional layer group
  • tandem organic EL element examples include, for example, US Pat. No. 6,337,492, US Pat. No. 7,420,203, US Pat. No. 7,473,923, US Pat. No. 6,872,472, US Pat. No. 6107734, US Pat. No. 6,337,492, JP-A 2006-228712, JP-A 2006-24791, JP-A 2006-49393, JP-A 2006-49394, JP-A 2006- No. 49396, JP 2011-96679, JP 2005-340187, JP 47114424, JP 3496681, JP 3884564, JP 4213169, JP 2010-192719.
  • the substrate has flexibility.
  • the flexibility as used in the present invention means that the substrate is cracked or chipped by visual confirmation after being repeatedly wound and released 10 times around a rod made of ABS resin (acrylonitrile-butadiene-styrene copolymer resin) having a diameter of 5 mm. This is a characteristic that is not damaged.
  • the substrate (3) disposed on the outermost surface (light emission surface side) is configured to irradiate at least the light irradiated by the light emitting light emitting diode, for example, the organic EL element, to the affected area to be treated. It is necessary to have optical transparency in a wavelength region of ⁇ 2000 nm.
  • the light transmittance in the present invention means that the substrate (3) has a transmittance in the wavelength region of 400 to 2000 nm of 60% or more, preferably 70% or more, more preferably 80% or more, particularly Preferably it is 90% or more.
  • the substrate (3) in the configuration in which the emitted light (L) is extracted from the substrate (3) side, the substrate (3) needs to be a transparent material, and the transparent flexible substrate (3) preferably used is Examples thereof include glass, quartz, and a resin substrate. More preferably, the organic EL element is a resin substrate from the viewpoint of safety because it can impart flexibility to the organic EL element and is not damaged.
  • polyesters such as polyethylene terephthalate (abbreviation: PET), polyethylene naphthalate (abbreviation: PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, and cellulose triacetate.
  • TAC cellulose acetate butyrate, cellulose acetate propionate
  • CAP cellulose esters such as cellulose acetate phthalate, cellulose nitrate and derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, Syndiotactic polystyrene, polycarbonate (abbreviation: PC), norbornene resin, polymethylpentene, polyetherketone, polyimide, Ether sulfone (abbreviation: PES), polyphenylene sulfide, polysulfones, polyether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic and polyarylates, Arton (trade name, manufactured by JSR) and Examples thereof include cycloolefin resins such as Apel (trade name, manufactured by Mitsui Chemicals).
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • PC polycarbonate
  • the thickness of the resin substrate is preferably a thin resin substrate in the range of 10 to 500 ⁇ m, more preferably in the range of 30 to 400 ⁇ m, and particularly preferably in the range of 50 to 300 ⁇ m. is there. If the thickness is 10 ⁇ m, the light emitting light emitting diode can be stably held, and if the thickness is 500 ⁇ m or less, the thermal energy generated during the light treatment can be efficiently diffused, and The patient can be in close contact with the skin while wearing clothes.
  • the thin plate flexible glass applicable as the flexible substrate according to the present invention is a glass plate that is thin enough to be bent.
  • the thin flexible glass examples include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
  • the thickness of the thin flexible glass is, for example, in the range of 10 to 500 ⁇ m, and preferably in the range of 50 to 300 ⁇ m.
  • a metal such as Ag or Au or an alloy containing a metal as a main component, CuI, indium-tin composite oxide (ITO), indium-zinc composite oxide (IZO), SnO 2 and metal oxides such as ZnO can be mentioned, but a metal or an alloy containing a metal as a main component is preferable, and silver or an alloy containing silver as a main component is more preferable.
  • the grid electrode mentioned later is also applicable.
  • the purity of silver is preferably 99% or more. Further, palladium (Pd), copper (Cu), gold (Au), or the like may be added to ensure the stability of silver.
  • the transparent anode is preferably a layer composed mainly of silver, but specifically, it may be formed of silver alone or may be composed of an alloy containing silver (Ag).
  • alloys include silver-magnesium (Ag-Mg), silver-copper (Ag-Cu), silver-palladium (Ag-Pd), silver-palladium-copper (Ag-Pd-Cu), silver -Indium (Ag-In) and the like.
  • the anode constituting the organic EL device according to the present invention is a transparent anode composed mainly of silver and having a thickness in the range of 2 to 20 nm.
  • the thickness is preferably in the range of 4 to 12 nm.
  • a thickness of 20 nm or less is preferable because the absorption component and reflection component of the transparent anode can be kept low and high light transmittance can be maintained.
  • the layer composed mainly of silver means that the silver content in the transparent anode is 60% by mass or more, preferably the silver content is 80% by mass or more, More preferably, the silver content is 90% by mass or more, and particularly preferably the silver content is 98% by mass or more.
  • transparent in the transparent anode according to the present invention means that the light transmittance at a wavelength of 550 nm is 50% or more.
  • the transparent anode may have a configuration in which a layer composed mainly of silver is divided into a plurality of layers as necessary.
  • a base layer may be provided at the lower portion from the viewpoint of improving the uniformity of the silver film of the transparent anode to be formed.
  • a base layer it is a layer containing the organic compound which has a nitrogen atom or a sulfur atom, and the method of forming a transparent anode on the said base layer is a preferable aspect.
  • the indium-zinc composite oxide (IZO) that can be applied to the anode maintains a high transmittance and can have a low resistance without firing. Since it is amorphous, it is excellent in flexibility and the electrode surface is smooth, so that there is little concern about leakage due to contact with the cathode.
  • IZO indium-zinc composite oxide
  • the grid electrode is composed of thin metal wires, a low resistance electrode of 3 ⁇ / ⁇ or less can be formed, and a large area light emitting device can be manufactured.
  • the grid electrode has a risk of leakage of the element due to the irregularities on the grid surface, but the light emitting layer becomes two layers, and the gap between the anode and the cathode becomes thick, so that the risk of leakage is reduced.
  • the grid electrode is composed of conductive fine metal wires.
  • the shape of the grid electrode is not limited to a lattice shape, and various shapes of grids such as a stripe shape, a honeycomb structure shape, and a mesh shape can be used. From the viewpoint of obtaining uniform conductivity regardless of the position, a grid having a periodic shape located on the entire surface of the organic EL element is preferable.
  • the line width of the fine metal wire constituting the grid electrode is preferably in the range of 10 to 200 ⁇ m, and the height of the fine wire is preferably in the range of 0.1 to 10.0 ⁇ m.
  • the aperture ratio of the grid electrode is preferably 80% or more from the viewpoint of enhancing transparency.
  • the aperture ratio is the ratio of the area occupied by the region where the fine metal wires forming the grid electrode are not arranged in the light emitting area of the organic EL element.
  • the aperture ratio of a grid electrode in which fine metal wires having a line width of 100 ⁇ m and a line interval of 1 mm are formed in a stripe shape or a lattice shape is about 90%.
  • Examples of the conductive metal material that can be used for the fine metal wires constituting the grid electrode include gold, silver, copper, iron, cobalt, nickel, chromium, and alloys thereof. From the viewpoint of low resistance, silver or copper is preferable, and silver is more preferable.
  • a coating solution containing metal nanoparticles using metal materials, metal complexes, etc. is desired by letterpress printing, intaglio printing, stencil printing, screen printing, ink jet, ink jet parallel line drawing, etc. It can form by the method of apply
  • the ink jet parallel line drawing method uses a coffee stain phenomenon in which when the coating liquid is applied in a line shape, the coating liquid flows from the center to the end of the line and solidification of the end proceeds. This is a method of forming two parallel lines from a line. Also, the grid electrode surface can be plated.
  • the grid electrode has a transparent conductive layer on the lower or upper part of the grid, thereby enabling OLED light emission in a large area.
  • the transparent conductive layer is made of a transparent metal oxide or a conductive polymer.
  • the transparent metal oxide include indium-tin composite oxide (ITO), indium-zinc composite oxide (IZO), SnO 2 and ZnO.
  • ITO indium-tin composite oxide
  • IZO indium-zinc composite oxide
  • SnO 2 SnO 2
  • ZnO ZnO
  • the conductive polymer a ⁇ -conjugated conductive polymer containing a polyanion can be used.
  • Examples of ⁇ -conjugated conductive polymers that can be used include polythiophenes, polypyrroles, polyindoles, polycarbazoles, polyanilines, polyacetylenes, polyfurans, polyparaphenylene vinylenes, polyazulenes, polyparaphenylenes. , Polyparaphenylene sulfides, polyisothianaphthenes, polythiazyl compounds and the like. Of these, polythiophenes or polyanilines are preferable and polyethylenedioxythiophene is more preferable from the viewpoint of improving conductivity, transparency, stability, and the like.
  • an insulating layer may be provided on the grid for the purpose of relaxing the irregularities on the surface of the grid, or for the purpose of preventing a short circuit when in contact with the cathode.
  • the material for forming the first electrode (3, anode) described above can be used in the same manner.
  • a phosphorescent light emitting compound or a fluorescent compound can be used as the light emitting material.
  • a configuration containing a photoluminescent compound is preferred.
  • This light emitting layer is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer and holes injected from the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. Alternatively, it may be the interface between the light emitting layer and the adjacent layer.
  • Such a light emitting layer is not particularly limited in its configuration as long as the light emitting material contained satisfies the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer between the light emitting layers.
  • the total thickness of the light emitting layers is preferably in the range of 1 to 100 nm, and more preferably in the range of 1 to 30 nm because a lower driving voltage can be obtained.
  • the sum total of the thickness of a light emitting layer is the thickness also including the said intermediate
  • the light emitting layer as described above is prepared by using a known method such as a vacuum evaporation method, a spin coating method, a casting method, an LB method (Langmuir-Blodget, Langmuir Blodgett method) and an ink jet method. Can be formed.
  • a known method such as a vacuum evaporation method, a spin coating method, a casting method, an LB method (Langmuir-Blodget, Langmuir Blodgett method) and an ink jet method. Can be formed.
  • a plurality of light emitting materials may be mixed, and a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound) may be mixed and used in the same light emitting layer.
  • the structure of the light-emitting layer preferably includes a host compound (also referred to as a light-emitting host) and a light-emitting material (also referred to as a light-emitting dopant compound), and emits light from the light-emitting material.
  • ⁇ Host compound> As the host compound contained in the light emitting layer, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. Further, the phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in a light emitting layer.
  • a known host compound may be used alone, or a plurality of types of host compounds may be used.
  • a plurality of types of host compounds it is possible to adjust the movement of charges, and the efficiency of the organic electroluminescent device can be improved.
  • a plurality of kinds of light emitting materials described later it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.
  • the host compound used in the light emitting layer may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). )
  • Examples of host compounds applicable to the present invention include, for example, JP-A Nos. 2001-257076, 2001-357777, 2002-8860, 2002-43056, 2002-105445, 2002-352957, 2002-231453, 2002-234888, 2002-260861, 2002-305083, US Patent Application Publication No. 2005/0112407, US Patent Application Publication No. 2009/0030202, International Publication No. 2001/039234, International Publication No. 2008/056746, International Publication No. 2005/089025, International Publication No. 2007/063754, International Publication No. 2005/030900, International Publication 200th / No. 086,028, WO 2012/023947, can be mentioned JP 2007-254297, JP-European compounds described in Japanese Patent No. 2034538 Pat like.
  • a phosphorescent compound also referred to as a phosphorescent compound, a phosphorescent material, or a phosphorescent dopant
  • a fluorescent compound both a fluorescent compound or a fluorescent material
  • a phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, it is a compound that emits phosphorescence at room temperature (25 ° C.), and the phosphorescence quantum yield is 0 at 25 ° C.
  • a preferred phosphorescence quantum yield is 0.1 or more, although it is defined as 0.01 or more compounds.
  • the phosphorescent quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of the Fourth Edition Experimental Chemistry Course 7.
  • the phosphorescence quantum yield in the solution can be measured using various solvents, but when using a phosphorescent compound in the present invention, the phosphorescence quantum yield is 0.01 or more in any solvent. Should be achieved.
  • the phosphorescent compound can be appropriately selected from known compounds used for the light-emitting layer of a general organic EL device, but preferably contains a group 8 to 10 metal in the periodic table of elements. More preferred are iridium compounds, more preferred are iridium compounds, osmium compounds, platinum compounds (platinum complex compounds) or rare earth complexes, and most preferred are iridium compounds.
  • At least one light emitting layer may contain two or more phosphorescent compounds, and the concentration ratio of the phosphorescent compound in the light emitting layer varies in the thickness direction of the light emitting layer. It may be an embodiment.
  • preferred phosphorescent compounds include organometallic complexes having Ir as a central metal. More preferably, a complex containing at least one coordination mode of a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, and a metal-sulfur bond is preferable.
  • the phosphorescent compound described above (also referred to as a phosphorescent metal complex) is described in, for example, Organic Letter, vol. 16, 2579-2581 (2001), Inorganic Chemistry, Vol. 30, No. 8, pp. 1685-1687 (1991), J. Am. Am. Chem. Soc. , 123, 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, pages 1704-1711 (2001), Inorganic Chemistry, Vol. 41, No. 12, pages 3055-3066 (2002) , New Journal of Chemistry. 26, 1171 (2002), European Journal of Organic Chemistry, Vol. 4, pages 695-709 (2004), and methods disclosed in the references and the like described in these documents Can be synthesized.
  • Fluorescent compounds include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes. And dyes, polythiophene dyes, and rare earth complex phosphors.
  • each layer constituting the organic functional layer unit will be described in the order of a charge injection layer, a hole transport layer, an electron transport layer, and a blocking layer.
  • the charge injection layer is a layer provided between the electrode and the light emitting layer in order to lower the driving voltage and improve the light emission luminance.
  • the organic EL element and its industrialization front line June 30, 1998, NT. The details are described in Volume 2, Chapter 2, “Electrode Materials” (pages 123 to 166) of “Part 2” of S Co., Ltd., and there are a hole injection layer and an electron injection layer.
  • the charge injection layer is present between the anode and the light emitting layer or the hole transport layer in the case of a hole injection layer, and between the cathode and the light emitting layer or the electron transport layer in the case of an electron injection layer.
  • the present invention is characterized in that the charge injection layer is disposed adjacent to the transparent electrode. When used in an intermediate electrode, it is sufficient that at least one of the adjacent electron injection layer and hole injection layer satisfies the requirements of the present invention.
  • the hole injection layer is a layer disposed adjacent to the anode, which is a transparent electrode, in order to lower the driving voltage and improve the luminance of light emission.
  • the organic EL element and its industrialization front line June 30, 1998 “Published by TS Co., Ltd.)”, Chapter 2, “Electrode Materials” (pages 123 to 166) in the second volume.
  • the details of the hole injection layer are also described in JP-A-9-45479, 9-260062, 8-82869, etc., and these compounds can be used for the hole injection layer. it can.
  • hexaazatriphenylene derivatives such as those described in JP-T-2003-519432 and JP-A-2006-135145 can also be used as a hole transport material.
  • the electron injection layer is a layer provided between the cathode and the light emitting layer for lowering the driving voltage and improving the light emission luminance.
  • the cathode is composed of the transparent electrode according to the present invention
  • Chapter 2 “Electrode materials” pages 123 to 166) of the second edition of “Organic EL devices and their industrialization front line (issued by NTS, November 30, 1998)” ) Is described in detail.
  • the details of the electron injection layer are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, etc., and the materials described therein are used for the electron injection layer. It can be preferably used.
  • the electron injection layer is preferably a very thin film, and depending on the constituent material, the layer thickness is preferably in the range of 1 nm to 10 ⁇ m.
  • the hole transport layer is made of a hole transport material having a function of transporting holes.
  • the hole injection layer and the electron blocking layer also have the function of a hole transport layer.
  • the hole transport layer can be provided as a single layer or a plurality of layers.
  • the hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic.
  • hole transport material those described above can be used, but porphyrin compounds, aromatic tertiary amine compounds and styrylamine compounds can be used, and in particular, aromatic tertiary amine compounds can be used. preferable.
  • the hole transport material may be formed by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, and an LB method (Langmuir Brodget, Langmuir Brodgett method). Thus, it can be formed by thinning.
  • the layer thickness of the hole transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
  • the hole transport layer may have a single layer structure composed of one or more of the above materials.
  • the p property can be increased by doping impurities into the material of the hole transport layer.
  • Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175 and J.P. Appl. Phys. 95, 5773 (2004), and the like.
  • the electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer.
  • the electron transport layer can be provided as a single layer structure or a stacked structure of a plurality of layers.
  • an electron transport material (also serving as a hole blocking material) constituting a layer portion adjacent to the light emitting layer is used as an electron transporting material. What is necessary is just to have the function to transmit.
  • any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives.
  • a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as a material for the electron transport layer. It can. Furthermore, a polymer material in which these materials are introduced into a polymer chain, or a polymer material having these materials as a polymer main chain can also be used.
  • metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (abbreviation: Alq 3 ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8- Quinolinol) aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (abbreviation: Znq), etc. and the central metal of these metal complexes
  • a metal complex replaced with In, Mg, Cu, Ca, Sn, Ga, or Pb can also be used as a material for the electron transport layer.
  • the electron transport layer can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an inkjet method, and an LB method.
  • the thickness of the electron transport layer is not particularly limited, but is usually about 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
  • the electron transport layer may have a single structure composed of one or more of the above materials.
  • the blocking layer includes a hole blocking layer and an electron blocking layer, and is a layer provided as necessary in addition to the constituent layers of the organic functional layer unit 3 described above. For example, it is described in JP-A Nos. 11-204258 and 11-204359, and “Organic EL elements and the forefront of industrialization (published by NTT Corporation on November 30, 1998)” on page 237. Hole blocking (hole block) layer and the like.
  • the hole blocking layer has a function of an electron transport layer in a broad sense.
  • the hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved.
  • the structure of an electron carrying layer can be used as a hole-blocking layer as needed.
  • the hole blocking layer is preferably provided adjacent to the light emitting layer.
  • the electron blocking layer has a function of a hole transport layer in a broad sense.
  • the electron blocking layer is made of a material that has the ability to transport holes and has a very small ability to transport electrons. By blocking holes while transporting holes, the probability of recombination of electrons and holes is improved. Can be made.
  • the structure of a positive hole transport layer can be used as an electron blocking layer as needed.
  • the layer thickness of the hole blocking layer applied to the present invention is preferably in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.
  • the cathode is an electrode film that functions to supply holes to the organic functional layer group and the light emitting layer, and a metal, an alloy, an organic or inorganic conductive compound, or a mixture thereof is used. Specifically, gold, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO Oxide semiconductors such as 2 and SnO 2 .
  • the cathode can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering.
  • the sheet resistance as the second electrode is several hundred ⁇ / sq.
  • the film thickness is usually selected from the range of 5 nm to 5 ⁇ m, preferably 5 to 200 nm.
  • the organic EL device it is preferable to use an electrode using Ag as the material constituting the anode and the cathode described above.
  • Ag it is possible to suppress heat generation, and it is possible to prevent luminance degradation and drive voltage increase caused by the high temperature of the organic EL element. This is because there are two types of heat carriers, electrons and phonons (lattice vibration), and there is a correlation between heat conduction and electron conduction.
  • sealing means used for sealing the organic EL element include a method of bonding a flexible sealing substrate (11), a cathode and a transparent substrate with a sealing adhesive layer (10). Can do.
  • the sealing substrate (11) may be disposed so as to cover the display area of the organic EL element, and may be a concave plate shape or a flat plate shape. Further, transparency and electrical insulation are not particularly limited.
  • a thin film glass plate, a polymer plate, a film, a metal film (metal foil) having flexibility, and the like can be given.
  • the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz.
  • the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.
  • the metal film include one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum.
  • the sealing substrate (11) a polymer film and a metal film can be preferably used from the viewpoint that the organic EL element can be thinned. Furthermore, the polymer film has a water vapor transmission rate of 1 ⁇ 10 ⁇ 3 g / m 2 .multidot.m at a temperature of 25 ⁇ 0.5 ° C. and a relative humidity of 90 ⁇ 2% RH measured by a method according to JIS K 7129-1992.
  • the oxygen permeability measured by a method according to JIS K 7126-1987 is preferably 1 ⁇ 10 ⁇ 3 ml / m 2 ⁇ 24 h ⁇ atm (1 atm is 1.01325 ⁇ 10 5 a Pa) equal to or lower than a temperature of 25 ⁇ 0.5 ° C.
  • water vapor permeability at a relative humidity of 90 ⁇ 2% RH is preferably not more than 1 ⁇ 10 -3 g / m 2 ⁇ 24h.
  • sealing adhesive (10) examples include photocuring and thermosetting adhesives having reactive vinyl groups of acrylic acid oligomers and methacrylic acid oligomers, and moisture curing types such as 2-cyanoacrylates. Can be mentioned. Moreover, heat
  • an inert gas such as nitrogen and argon in the gas phase and liquid phase
  • An inert liquid such as fluorinated hydrocarbon or silicon oil can be injected.
  • the gap between the sealing member and the display area of the organic EL element can be evacuated, or a hygroscopic compound can be sealed in the gap.
  • the organic EL element is transparent in a state that completely covers the light emitting functional layer unit and exposes the terminal portions of the anode (3) as the first electrode and the cathode (6) as the second electrode in the organic EL element.
  • a sealing film can also be provided on the substrate.
  • the sealing member as described above is provided in a state in which the terminal portions of the anode (3) as the first electrode and the cathode (6) as the second electrode in the organic EL element are exposed and at least the light emitting functional layer is covered. It has been.
  • the phototherapy method or phototherapy in the present invention is a method for performing treatment by light irradiation, that is, so-called phototherapy for a specific disease, and the phototherapy device of the present invention is described above. It is the apparatus provided with the function which irradiates the light ray effective for the phototherapy equipped with the light emitting diode for light irradiation concerning this invention.
  • treatment by irradiation with red light or infrared light is performed.
  • This infrared treatment is performed, for example, by irradiating the affected area with near infrared light to dilate blood vessels and increase tissue blood flow, suppress sympathetic nervous system excitement, or activate cellular tissues to heal wounds. It works on inflammatory cytokines and analgesics to bring about anti-inflammatory and analgesic effects.
  • the near-infrared region in the vicinity of a wavelength of 800 to 900 nm, which absorbs less water, hemoglobin, and melanin, has excellent biological permeability, and can suppress inflammation and relieve pain by an action mechanism different from the thermal effect. Treatment of atopic dermatitis by blue or ultraviolet irradiation.
  • a method using light is called phototherapy, and a treatment using a photochemotherapeutic agent together with light irradiation is called photodynamic therapy (PDT, Photo Dynamic Therapy).
  • PDT Photo Dynamic Therapy
  • a photosensitive therapeutic agent known as a photochemotherapeutic agent is supplied to the treated area of the body from the outside or the inside.
  • the phototherapy method according to the present invention can be applied to treatment of various diseases, syndromes, diseases, symptoms, or various diseases that respond to phototherapy and cosmetic symptoms.
  • Therapeutic diseases and cosmetic conditions to which phototherapy can be applied include, for example, skin diseases and skin-related symptoms including skin aging and cellulite, enlarged pores, oily skin, folliculitis, Precancerous actinic keratosis, skin damage, aging, bruised and sun-damaged skin, eyelids, skin ulcers (diabetic, pressure ulcer, venous stasis), rosacea acne, cellulite Light adjustment of sebaceous glands and surrounding tissues, scoring, acne scars and acne bacteria, inflammation, pain, trauma, mental and nervous system related diseases and symptoms, comedones, edema, Paget's disease, primary tumor and metastasis Sex tumors, connective tissue diseases, collagen treatment, fibroblasts, and fibroblast-derived cell levels in mammalian tissues, retinal irradiation, neoplastic diseases, neovascular diseases and hypertrophic diseases, inflammatory and allergic reactions, sweat, Klein sweat gland (sweat gland) or sweat from the apocrine
  • the cosmetic symptoms are selected from acne, skin rejuvenation, skin wrinkles, cellulite, vitiligo, and psoriasis (mild, mild to severe, and severe).
  • the phototherapy device of the present invention is characterized in that the light emission wavelength of a light emitting light emitting diode, for example, an organic EL element is in a wavelength range of 400 to 2000 nm.
  • the light emission wavelength of the light emitting light emitting diode is preferably 400 to 1000 nm, more preferably 400 to 950 nm, and particularly preferably 400 to 900 nm.
  • One of the main effects of phototherapy is known to be able to relieve stiffness and pain, for example, by irradiating the skin surface with light of various wavelengths. That is, stimulation of metabolism in mitochondria. After the phototherapy, the cells increase in metabolism, improve transmission, and improve resistance to good stress and the like.
  • the light emitting diode for light irradiation according to the present invention for example, an organic EL device can be used for cell stimulation.
  • a preferable wavelength range for cell stimulation is 600 to 900 nm, more preferably 620 to 880 nm, and particularly preferably 650 to 870 nm.
  • Examples of particularly preferred wavelengths for cell stimulation are 683.7 nm, 667.5 nm, 772.3 nm, 750.7 nm, 846 nm, and 812.5 nm.
  • the wavelength range applied for skin care and skin repair is preferably in the range of 400 to 800 nm, more preferably in the range of 450 to 750 nm, still more preferably in the range of 500 to 700 nm, and particularly preferably. It is in the range of 580 to 640 nm.
  • a light emitting light emitting diode used for acne treatment for example, an organic EL element
  • a combination of red light and blue light is particularly preferable.
  • the red light is preferably selected from the range of 590 to 750 nm, more preferably 600 to 720 nm, and still more preferably 620 to 700 nm.
  • Two additional wavelengths preferred for the treatment of acne are 633 nm and 660 nm.
  • an organic EL element that emits light having a wavelength of 500 nm or a wavelength in the range of 500 to 700 nm.
  • the wavelength for treatment or prevention of cellulite is in the range of 400 to 1000 nm, preferably in the range of 400 to 900 nm, more preferably in the range of 450 to 900 nm, and particularly preferably in the range of 500 to 850 nm. It is.
  • the wavelength for treating and preventing skin aging and reducing or preventing wrinkle formation is in the range of 400 to 950 nm.
  • This wavelength is preferably in the range of 550 to 900 nm, more preferably in the range of 550 to 860 nm.
  • the light emitting diode for light irradiation applied to skin rejuvenation for example, an organic EL element
  • the light emitting diode for light irradiation applied to skin rejuvenation is in the range of 700 to 1000 nm, preferably in the range of 750 to 900 nm, more preferably in the range of 750 to 860 nm, and particularly preferably 800. It is a light emitting diode for light irradiation that emits light in the range of ⁇ 850 nm.
  • the wavelength for treatment and prevention of skin redness is in the range of 460 to 660 nm.
  • the wavelength is preferably in the range of 500 to 620 nm, more preferably in the range of 540 to 580 nm.
  • One particularly preferred wavelength for this purpose is 560 nm.
  • the wavelength for treatment and prevention of dermatitis is in the range of 470 to 670 nm.
  • the wavelength is preferably in the range of 490 to 650 nm, more preferably in the range of 530 to 610 nm.
  • Two particularly preferred wavelengths for this purpose are 550 nm and 590 nm.
  • the wavelength for the treatment and prevention of atopic eczema is in the range of 470 to 670 nm.
  • the wavelength is preferably in the range of 490 to 650 nm, more preferably in the range of 530 to 610 nm.
  • the wavelength used for the treatment of edema is preferably in the range of 760 to 940 nm, more preferably in the range of 780 to 920 nm, still more preferably in the range of 800 to 900 nm, and particularly preferably in the range of 820 to 880 nm. .
  • the phototherapy device of the present invention can be used to treat a wound.
  • Preferred wavelengths for the treatment of wounds by phototherapy are in the range of 600-950 nm, more preferably in the range of 650-900 nm, and particularly preferred wavelengths are 660, 720, 880 nm.
  • the wavelength for treatment and prevention of nervous system and mental diseases and symptoms is in the range of 350 to 600 nm.
  • the wavelength is preferably in the range of 400 to 550 nm, more preferably in the range of 440 to 500 nm.
  • Two preferred wavelengths for this purpose are 460 nm and 480 nm.
  • Photodynamic therapy In the phototherapy method using the phototherapy device of the present invention, it is preferable to apply photodynamic therapy (PDT) using a photochemotherapeutic agent together with light irradiation by the light emitting diode for light irradiation.
  • PDT provides a photosensitive therapeutic agent, known as a photopharmacological agent, for external or internal use on the body region to be treated.
  • the photochemotherapy agent is activated by radiating light having an appropriate wavelength and intensity with the phototherapy device of the present invention.
  • a method of treating a tumor in which a photosensitizing substance as a photochemotherapeutic agent is taken into tumor cells and irradiated with light to kill the cells. More specifically, reactive oxygen is generated by introducing photosensitized fluorescent protein or the like into tumor cells or endothelial cells of new blood vessels in tumor tissue and irradiating with appropriate light. This active oxygen is a method in which tumor cells or tumor tissue are damaged and the tumor disappears.
  • a photochemotherapeutic agent also referred to as a photosensitizing compound
  • PDT photodynamic therapy
  • a formulation containing a photosensitizing substance that gives rise to seeds is cytotoxic.
  • the photochemotherapeutic agent can be used for either systemic administration or local administration (eg, delivery to the intestinal tract, cheek, sublingual, gingiva, palate, nose, lung, vagina, rectum, or eyeball).
  • Photodynamic therapy formulations can also be provided in dosage forms suitable for oral or parenteral administration.
  • photodynamic therapy preparations for topical administration include gels, creams, ointments, sprays, lotions, waxes, sticks, soaps, powders, tablets, films, vaginal suppositories, aerosols Formulated in any of drops, solutions, and conventional pharmaceutical forms in the art.
  • absorption enhancers such as lubricants, moisturizers, emulsifiers, suspending agents, preservatives, sweeteners, flavoring agents, surface penetration aids and the like may be further included as necessary.
  • photochemotherapeutic agent examples include 5-aminolevulinic acid hydrochloride (Crawford Pharmaceuticals), methylaminolevulinic acid (Metfix (registered trademark)), and Photocure (Photocure). ) And other topical agents.
  • Photofin (registered trademark) Photofin (registered trademark) (from Axcan) and Foskan (registered trademark) (from Foscan (registered trademark)) (from Biolittech Ltd)
  • injection drugs mainly used for malignant diseases. The drug is often applied in an inactive form, which is metabolized to a photosensitive photochemotherapeutic agent.
  • a method of providing a function to automatically turn off the device when the light emitting diode for light irradiation is overheated or overheated by installing an “overshoot prevention timer” for preventing excessive light irradiation 2)
  • An adhesive layer is provided on the side facing the affected part of the light emitting diode for light irradiation, and a function of attaching the affected part to the affected part is given, and the adhesive layer is a therapeutic agent, menthol as a shipping agent, aroma that uses fever, and moist And the like, 3)
  • a sheet having a fine hole is placed on the surface side in contact with the affected part with a slight gap from the organic EL element in order to prevent the affected part from being swollen.
  • the configuration has a light extraction film and an internal scattering layer.
  • 4) To have a toning function for changing the emission color of the organic EL element at the set time in order to notify the completion of phototherapy; 5) A function that can switch the light irradiation intensity without changing the color tone of the emitted light, 6) The provision of a waterproof function that can be used safely even in an environment where water is used, 7) As a light emitting light emitting diode, it has a wide light emitting area and high tourism uniformity (for this function, it is effective to apply a grid electrode), Etc.
  • the phototherapy device of the present invention has a light emission diode that is capable of stably irradiating an affected area with a therapeutic light beam with a broad emission wavelength, little radiation angle dependence, and stable irradiation. It is a device that can perform stable treatment on treatment target parts having various shapes, and is applicable to various diseases, syndromes, diseases, symptoms, or treatment of various diseases that respond to phototherapy and cosmetic symptoms. can do.

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Abstract

L'objet de la présente invention est de fournir un appareil de luminothérapie, comprenant une diode électroluminescente pour l'exposition à la lumière, qui permet à des faisceaux lumineux thérapeutiques, qui dépendent moins de l'angle d'émission, d'être projetés de manière stable sur une partie affectée avec une longueur d'onde d'émission large. L'appareil de luminothérapie selon la présente invention est caractérisé en ce que : l'appareil de luminothérapie est pourvu d'une diode électroluminescente pour l'exposition à la lumière qui a une longueur d'onde d'émission de 400 à 2 000 nm ; la valeur absolue (∆λmax) de la différence entre la longueur d'onde du pic d'émission (λmax0°) de la bande d'émission maximale dans un spectre d'émission observé au niveau d'une position devant la diode électroluminescente pour l'exposition à la lumière et la longueur d'onde du pic d'émission (λmax30°) de la bande d'émission maximale dans un spectre d'émission au niveau d'un angle d'inclinaison de 30° est inférieure à 50 nm ; et la demi-largeur de la bande d'émission maximale dans le spectre d'émission observé au niveau d'une position devant la diode électroluminescente pour l'exposition à la lumière et la demi-largeur de la bande d'émission maximale dans le spectre d'émission au niveau d'un angle d'inclinaison de 30° sont toutes les deux supérieures ou égales à 20 nm.
PCT/JP2016/057056 2015-04-09 2016-03-08 Appareil de luminothérapie WO2016163192A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018079204A1 (fr) * 2016-10-26 2018-05-03 株式会社アデランス Dispositif stimulant la régénération/pousse des cheveux

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JP2006289055A (ja) * 2005-03-14 2006-10-26 Toshio Oshiro 美容処理装置
JP2007000610A (ja) * 2005-05-27 2007-01-11 Toshio Oshiro 発光ダイオード治療装置
JP2009266385A (ja) * 2008-04-21 2009-11-12 Asahi Kasei Corp ボトムエミッション型有機ｅｌ素子
JP2013123586A (ja) * 2011-12-15 2013-06-24 Nagoya Univ 生体組織を活性化する方法及びその装置
JP2014049393A (ja) * 2012-09-03 2014-03-17 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子および電子機器

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Publication number Priority date Publication date Assignee Title
JP2006289055A (ja) * 2005-03-14 2006-10-26 Toshio Oshiro 美容処理装置
JP2007000610A (ja) * 2005-05-27 2007-01-11 Toshio Oshiro 発光ダイオード治療装置
JP2009266385A (ja) * 2008-04-21 2009-11-12 Asahi Kasei Corp ボトムエミッション型有機ｅｌ素子
JP2013123586A (ja) * 2011-12-15 2013-06-24 Nagoya Univ 生体組織を活性化する方法及びその装置
JP2014049393A (ja) * 2012-09-03 2014-03-17 Idemitsu Kosan Co Ltd 有機エレクトロルミネッセンス素子および電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018079204A1 (fr) * 2016-10-26 2018-05-03 株式会社アデランス Dispositif stimulant la régénération/pousse des cheveux

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