WO2016158051A1 - Acoustic wave resonator, acoustic wave filter, and duplexer - Google Patents
Acoustic wave resonator, acoustic wave filter, and duplexer Download PDFInfo
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- WO2016158051A1 WO2016158051A1 PCT/JP2016/054466 JP2016054466W WO2016158051A1 WO 2016158051 A1 WO2016158051 A1 WO 2016158051A1 JP 2016054466 W JP2016054466 W JP 2016054466W WO 2016158051 A1 WO2016158051 A1 WO 2016158051A1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14544—Transducers of particular shape or position
- H03H9/1457—Transducers having different finger widths
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
- H03H9/725—Duplexers
Definitions
- the present invention relates to an elastic wave resonator in which an IDT electrode is provided on a piezoelectric substrate, and an elastic wave filter and a duplexer including the elastic wave resonator.
- Patent Document 1 discloses an acoustic wave resonator including a piezoelectric substrate and an IDT electrode provided on the piezoelectric substrate.
- Patent Document 1 shows a structure in which electrode fingers having different widths are periodically arranged in an IDT electrode.
- An object of the present invention is to provide an acoustic wave resonator that can sufficiently suppress the generation of nonlinear signals without increasing the area of an IDT electrode.
- Another object of the present invention is to provide an elastic wave filter and a duplexer provided with the elastic wave resonator.
- the acoustic wave resonator according to the present invention includes a piezoelectric substrate and an IDT electrode formed on the piezoelectric substrate, and the IDT electrode includes a first electrode finger, and the first electrode finger and the acoustic wave propagation.
- the first width of the electrode fingers along the elastic wave propagation direction is W 1
- the second width of the electrode fingers along the elastic wave propagation direction was a W 2
- the pitch is an electrode finger center distance between the first and the electrode fingers and the second electrode fingers when is L
- the metallization ratio of the first electrode fingers (W 1 / L ) Is smaller than the metallization ratio (W 2 / L) of the second electrode finger
- the sum of the metallization ratios of the first and second electrode fingers is 0.
- the ratio of the first and second widths of the electrode fingers (W 2 / W 1 But 1.12 or more and 2.33 or less, or the sum of the first and metallization ratio of the second electrode fingers (W 1 / L + W 2 / L) is greater than 1.00, and wherein The ratio of the widths of the first and second electrode fingers (W 2 / W 1 ) is 1.40 or more and 2.34 or less.
- a sum of metallization ratios of the first and second electrode fingers (W 1 / L + W 2 / L) is greater than 0.70 and is 1.00.
- the width ratio (W 2 / W 1 ) of the first and second electrode fingers is 1.14 or more and 2.33 or less, or the first and second electrode fingers
- the sum of the metallization ratios (W 1 / L + W 2 / L) is greater than 1.00, and the ratio of the widths of the first and second electrode fingers (W 2 / W 1 ) is 1.40 or more 2.34 or less. In this case, it is possible to suppress the generation of nonlinear signals while reducing the size.
- the IDT electrode includes a plurality of the first electrode fingers and a plurality of the second electrode fingers, and an elastic wave propagation direction.
- the first electrode fingers and the second electrode fingers are alternately arranged.
- the IDT electrode includes a plurality of the first electrode fingers and a plurality of the second electrode fingers, and an elastic wave propagation direction. 2, two adjacent first electrode fingers and two adjacent second electrode fingers are alternately arranged.
- An elastic wave filter according to the present invention is an elastic wave filter having a plurality of elastic wave resonators, and at least one of the plurality of elastic wave resonators is configured according to the present invention. It is an elastic wave resonator.
- the duplexer according to the present invention is a duplexer that includes a plurality of acoustic wave resonators, and includes a bandpass first filter and a second filter having a different passband from the first filter, Of the plurality of elastic wave resonators of at least one of the first and second filters, at least one elastic wave resonator is an elastic wave resonator configured according to the present invention.
- the metallization ratio of the first and second electrode fingers and the ratio of the widths of the first and second electrode fingers are limited to a specific range. Therefore, according to the acoustic wave resonator of the present invention, it is possible to sufficiently suppress the generation of nonlinear signals without increasing the area of the IDT electrode.
- FIG. 1 is a schematic plan view of an acoustic wave resonator according to the first embodiment of the present invention.
- FIG. 2 is a schematic front sectional view showing, in an enlarged manner, a portion where the first and second electrode fingers are adjacent to each other in the elastic wave device according to the first embodiment of the present invention.
- FIG. 3 is a diagram illustrating the third harmonic characteristics of the acoustic wave device produced in the experimental example.
- FIG. 4 is a diagram illustrating the third-order IMD characteristics of the acoustic wave device manufactured in the experimental example.
- FIG. 5 is a schematic plan view of an acoustic wave resonator according to the second embodiment of the present invention.
- FIG. 6 is a diagram illustrating the third harmonic characteristic of the acoustic wave resonator according to the second embodiment.
- FIG. 7 is a diagram illustrating third-order IMD characteristics of the acoustic wave resonator according to the second embodiment.
- FIG. 8 is a diagram illustrating second harmonic characteristics of the elastic wave resonators according to the first and second embodiments.
- FIG. 9 is a schematic circuit diagram of a duplexer according to an embodiment of the present invention.
- FIG. 1 is a schematic plan view of an acoustic wave resonator according to the first embodiment of the present invention.
- FIG. 2 is an enlarged schematic front sectional view showing a portion where the first and second electrode fingers are adjacent to each other in the elastic wave device according to the first embodiment of the present invention.
- the acoustic wave resonator 1 has a piezoelectric substrate 2.
- the piezoelectric substrate 2 is a substrate made of LiTaO 3 .
- a substrate made of other piezoelectric single crystals such as LiNbO 3 may be used, or a substrate made of piezoelectric ceramics may be used.
- an IDT electrode 3 and reflectors 4 and 5 disposed on both sides of the IDT electrode 3 in the elastic wave propagation direction are formed on the piezoelectric substrate 2. Thereby, a 1-port elastic wave resonator is formed.
- the IDT electrode 3 is made of an appropriate metal such as Al, Cu, Ni, Ti, Pt, NiCr or AlCu, or an alloy containing at least one of these metals.
- the IDT electrode 3 may be a single-layer metal film or a laminated metal film in which two or more kinds of metals or alloys are laminated.
- the IDT electrode 3 has a plurality of first electrode fingers 3a, a plurality of second electrode fingers 3b, and first and second bus bars 3c, 3d.
- the plurality of first electrode fingers 3a and the plurality of second electrode fingers 3b are alternately arranged in the elastic wave propagation direction.
- the elastic wave propagation direction is a direction orthogonal to the direction in which the electrode fingers extend.
- the plurality of first electrode fingers 3a and the plurality of second electrode fingers 3b are interleaved with each other.
- One end of the plurality of first electrode fingers 3a is connected to the first bus bar 3c.
- One end of the plurality of second electrode fingers 3b is connected to the second bus bar 3d.
- the IDT electrode 3 has only the first and second electrode fingers 3a and 3b and does not have other electrode fingers.
- at least some of the electrode fingers in the IDT electrode 3 may be the first and second electrode fingers 3a and 3b. That is, it is only necessary to provide a region where the first and second electrode fingers 3a and 3b are alternately arranged in at least a part in the elastic wave propagation direction.
- the entire electrode fingers constitute a region where the first and second electrode fingers 3a and 3b are alternately arranged. Further, as in this embodiment, it is more preferable that all the first and second electrode fingers 3a and 3b are alternately arranged in the elastic wave propagation direction. As the proportion of the area where the first and second electrode fingers 3a and 3b are alternately arranged is larger, the generation of a nonlinear signal to be described later can be more effectively suppressed.
- the metallization ratio of the first electrode finger 3a is smaller than the metallization ratio of the second electrode finger 3b.
- the width of the first electrode fingers 3a and W 1 when the pitch is an electrode finger center distance between the first electrode fingers 3a and the second electrode finger 3b is L, first The metallization ratio of the electrode finger 3a is represented by W 1 / L. Further, if the width of the second electrode fingers 3b and W 2, metallization ratio of the second electrode finger 3b is expressed by W 2 / L. In addition, W 1 is, W 2 smaller.
- the sum of metallization ratios (W 1 / L + W 2 / L) of the first and second electrode fingers 3 a and 3 b is 0.65 or more and 1.00 or less
- the width ratio (W 2 / W 1 ) of the second electrode fingers 3a and 3b is 1.12 or more and 2.33 or less.
- W 1 / L + W 2 / L is greater than 1.00, and W 2 / W 1 is 1.40 or more and 2.34 or less.
- the sum of metallization ratio (W 1 / L + W 2 / L) and the ratio of electrode finger width (W 2 / W 1 ) are within the above ranges, and W 1 / L ⁇ W 2 / L.
- a 1-port elastic wave resonator 1 was manufactured under the following conditions.
- the acoustic wave resonator 1 having a fundamental mode resonance frequency of 839 MHz was manufactured.
- Piezoelectric substrate 2 42 ° YX-LiTaO 3
- IDT electrode 3 Ti / AlCu (Ti and AlCu are stacked in this order) Number of electrode fingers: 80 pairs
- the metallization ratios W 1 / L and W 2 / L of the first and second electrode fingers 3a and 3b are set in the range of 0.3 to 0.7 as shown in Table 1.
- Samples were made by changing. Specifically, by changing the combination of W 1 / L and W 2 / L, samples A1 to A8, B1 to B7, C1 to C6, D1 to D5, E1 to E4, F1 to F3, G1 shown in Table 1 ⁇ G2 and H1 were made.
- the wavelength and the crossing width were adjusted so that the characteristics of each sample were equivalent.
- Table 2 shows the adjusted wavelength of each sample
- Table 3 shows the crossing width of each sample.
- the electrode finger width ratio (W 2 / W 1 ) in each sample is shown in Table 4, and the sum of metallization ratios (W 1 / L + W 2 / L) is shown in Table 5. Note that the sum of the metallization ratios (W 1 / L + W 2 / L) in Table 5 decreases as the IDT electrode 3 area increases. This is because the capacitance per electrode finger increases as the metallization ratio increases, and the crossing width needs to be reduced in order to design the IDT electrode 3 with the same impedance.
- W 1 / L + W 2 / L is equal to or greater than that of the reference sample and W 1 / L ⁇ when compared to the reference sample having a smaller IDT electrode area than the sample itself.
- W 2 / L and W 1 / L ⁇ W 2 / L it can be seen that the peak value of the third harmonic is improved as compared with any of the reference samples.
- W 1 / L + W 2 / L is 0.65 or more and 1.00 or less
- W 2 / W 1 is 1.12 or more and 2.33 or less
- W 1 / L + W 2 / L is larger than 1.00, W 2 / W 1 is 1.40 or more and 2.34 or less, and W 1 / L ⁇ W 2 / L is satisfied It can be seen that the peak value of the third harmonic is improved as compared with any of the reference samples.
- FIG. 3 is a diagram illustrating the third harmonic characteristics of the acoustic wave device produced in the experimental example.
- FIG. 4 is a diagram illustrating the third-order IMD characteristics of the acoustic wave device manufactured in the experimental example.
- FIG. 4 shows that the level of the third order IMD (frequency: the third order IMD in the frequency band of 870 to 895 MHz) is improved by about 1 to 5 dB in B5 compared to the reference sample of D1.
- the level of the 3rd order IMD is worse than that of the reference sample, but this is an effect of the secondary mode and is not an essential problem.
- the peak level of the third-order IMD is improved by about 4 dB in B5 compared to the reference sample of D1.
- the phase of the nonlinear signal generated by each electrode finger is different and canceling occurs, so the level of the nonlinear signal is considered to be lowered.
- the samples A4 to A8, B2 to B7, C3 to C6, D3, D5, and E4 shown in Table 1 are the third order compared to the reference sample in which W 1 / L + W 2 / L is equal or smaller. It can be seen that the peak value of the harmonic is improved.
- W 1 / L + W 2 / L is greater than 0.7, and 1.00 or less
- W 2 / W 1 is 1.14 or more and 2.33 or less
- W 1 / L + W 2 / L is larger than 1.00, W 2 / W 1 is 1.40 or more and 2.34 or less, and W 1 / L ⁇ W 2 / L is satisfied It can be seen that the peak value of the third harmonic is improved as compared with a reference sample in which W 1 / L + W 2 / L is equal or small.
- W 1 / L + W 2 / L is set to be greater than 0.70 and equal to or less than 1.00, and W 2 / W 1 (W 1 / L ⁇ W 2 / L) is 1.14. As mentioned above, it is preferable to be 2.33 or less. Alternatively W 1 / L + W 2 / L is greater than 1.00, and the W 2 / W 1, 1.40 or more, it is preferable that 2.34 or less.
- FIG. 5 is a schematic plan view of an acoustic wave resonator according to the second embodiment of the present invention. As shown in FIG. 5, in the acoustic wave resonator 21, in the acoustic wave propagation direction, two adjacent first electrode fingers 3a, 3a and two adjacent second electrode fingers 3b, 3b Are arranged alternately.
- the plurality of first electrode fingers 3a and the plurality of first or second electrode fingers 3a, 3b are interleaved with each other.
- a plurality of first or second electrode fingers 3a and 3b are connected to the first bus bar 3c.
- a plurality of first or second electrode fingers 3a and 3b are connected to the second bus bar 3d.
- all electrode fingers are constituted by two adjacent first electrode fingers 3a and 3a and two adjacent second electrode fingers 3b and 3b. Two adjacent first electrode fingers 3a, 3a and two adjacent second electrode fingers 3b, 3b are alternately arranged in the elastic wave propagation direction.
- two adjacent first electrode fingers 3a, 3a and two adjacent second electrode fingers 3b, 3b are alternately and periodically provided at least partially within the IDT electrode 3. What is necessary is just to have the area
- 50% or more of the electrode fingers of the entire electrode finger are constituted by two adjacent first electrode fingers 3a, 3a and two adjacent second electrode fingers 3b, 3b. Is preferred. As in the present embodiment, it is more preferable that all electrode fingers are constituted by two adjacent first electrode fingers 3a, 3a and two adjacent second electrode fingers 3b, 3b. The larger the ratio of such electrode fingers, the more reliably the generation of nonlinear signals described later can be suppressed. Other points are the same as in the first embodiment.
- the metallization ratio (W 1 / L) of the first electrode finger 3a is smaller than the metallization ratio (W 2 / L) of the second electrode finger 3b. Further, W 1 ⁇ W 2 is satisfied.
- the sum of metallization ratios (W 1 / L + W 2 / L) of the first and second electrode fingers 3 a and 3 b is 0.65 or more and 1.00 or less, and the first and second electrodes
- the width ratio (W 2 / W 1 ) of the fingers 3a and 3b is 1.12 or more and 2.33 or less.
- W 1 / L + W 2 / L is greater than 1.00, and W 2 / W 1 is 1.40 or more and 2.34 or less. Therefore, also in the acoustic wave resonator 21, generation
- W 1 / L + W 2 / L is greater than 0.70 and 1.00 or less, and W 2 / W 1 is 1.14 or more and 2.33 or less. Thereby, generation of a nonlinear signal can be sufficiently suppressed without increasing the size.
- FIG. 6 is a diagram illustrating the third harmonic characteristic of the acoustic wave resonator according to the second embodiment.
- FIG. 7 is a diagram illustrating third-order IMD characteristics of the acoustic wave resonator according to the second embodiment.
- FIG. 8 is a diagram illustrating second harmonic characteristics of the elastic wave resonators according to the first and second embodiments.
- the peak value of the second harmonic (the peak value in the frequency range of 1600 to 1800 MHz) is further improved as compared with the acoustic wave resonator 1.
- the first and second electrode fingers 3a and 3b are connected to the first and second bus bars 3c and 3d in a well-balanced manner, thereby improving electrical symmetry. This is probably because of this.
- FIG. 9 is a schematic circuit diagram of a duplexer according to an embodiment of the present invention.
- the duplexer according to the present embodiment includes a first filter 9 and a second filter 10 that are commonly connected to the antenna 8.
- the first filter 9 is a band-pass transmission filter.
- the first filter 9 is a ladder type filter.
- the first filter 9 has an input terminal 12a that is a transmission terminal and an output terminal 12b.
- a plurality of series arm resonators S1 to S4 are arranged on the series arm connecting the input terminal 12a and the output terminal 12b.
- a parallel arm resonator P1 is connected between a connection point between the series arm resonator S1 and the series arm resonator S2 and the ground potential.
- a parallel arm resonator P2 is connected between a connection point between the series arm resonator S3 and the series arm resonator S4 and the ground potential.
- the second filter 10 is a reception filter having a pass band different from that of the first filter 9.
- the second filter 10 includes a longitudinally coupled resonator type acoustic wave filter 14.
- the second filter 10 has an input terminal 13a and an output terminal 13b as a receiving terminal.
- the acoustic wave resonator 11 is connected between the input terminal 13 a and the longitudinally coupled resonator type acoustic wave filter 14.
- the input terminal 13a is connected to the antenna 8 through a common connection point with the output terminal 12b.
- a ladder-type filter, a longitudinally coupled resonator-type filter, a lattice-type filter, or the like may be used as the filters used for the first and second filters.
- all the resonators of the first filter 9 are the elastic wave resonators 1 according to the first embodiment of the present invention described above. Therefore, generation of nonlinear signals in all the resonators of the first filter 9 can be suppressed, and increase in noise in the reception band of the second filter 10 can be suppressed. Therefore, in the duplexer according to the present embodiment, the reception sensitivity is not easily lowered.
- At least one of the plurality of elastic wave resonators constituting the elastic wave filter may be an elastic wave resonator configured according to the present invention.
- At least one elastic wave resonator of the transmission filter may be an elastic wave resonator configured according to the present invention.
- the resonator directly connected to the second filter as the reception filter is the elastic wave resonator of the present invention.
- the elastic wave resonator of the present invention Preferably there is.
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Abstract
Description
(第1の実施形態)
図1は、本発明の第1の実施形態に係る弾性波共振子の模式的平面図である。また、図2は、本発明の第1の実施形態に係る弾性波装置において、第1及び第2の電極指が隣り合っている部分を拡大して示す模式的正面断面図である。 [Elastic wave resonator]
(First embodiment)
FIG. 1 is a schematic plan view of an acoustic wave resonator according to the first embodiment of the present invention. FIG. 2 is an enlarged schematic front sectional view showing a portion where the first and second electrode fingers are adjacent to each other in the elastic wave device according to the first embodiment of the present invention.
実験例においては、以下に示す条件で、1ポート型の弾性波共振子1を作製した。なお、実験例においては、基本モードの共振周波数が、839MHzである弾性波共振子1を作製した。 Experimental example;
In the experimental example, a 1-port elastic wave resonator 1 was manufactured under the following conditions. In the experimental example, the acoustic wave resonator 1 having a fundamental mode resonance frequency of 839 MHz was manufactured.
IDT電極3:Ti/AlCu(Ti,AlCuの順に積層)
電極指の対数:80対 Piezoelectric substrate 2: 42 ° YX-LiTaO 3
IDT electrode 3: Ti / AlCu (Ti and AlCu are stacked in this order)
Number of electrode fingers: 80 pairs
図5は、本発明の第2の実施形態に係る弾性波共振子の模式的平面図である。図5に示すように、弾性波共振子21では、弾性波伝搬方向において、隣り合う2本の第1の電極指3a,3aと、隣り合う2本の前記第2の電極指3b,3bとが、交互に配置されている。 (Second Embodiment)
FIG. 5 is a schematic plan view of an acoustic wave resonator according to the second embodiment of the present invention. As shown in FIG. 5, in the
図9は、本発明の一実施形態に係るデュプレクサの概略回路図である。本実施形態に係るデュプレクサは、アンテナ8に共通に接続されている第1のフィルタ9と、第2のフィルタ10とを有する。 [Elastic wave filter and duplexer]
FIG. 9 is a schematic circuit diagram of a duplexer according to an embodiment of the present invention. The duplexer according to the present embodiment includes a
2…圧電基板
3…IDT電極
3a,3b…第1,第2の電極指
3c,3d…第1,第2のバスバー
4,5…反射器
8…アンテナ
9…第1のフィルタ
10…第2のフィルタ
12a,13a…入力端子
12b,13b…出力端子
14…縦結合共振子型の弾性波フィルタ
S1~S4…直列腕共振子
P1,P2…並列腕共振子 DESCRIPTION OF
Claims (6)
- 圧電基板と、
前記圧電基板上に形成されたIDT電極とを備え、
前記IDT電極が、第1の電極指と、該第1の電極指と弾性波伝搬方向において隣接している、第2の電極指とを有し、
弾性波伝搬方向に沿う前記第1の電極指の幅をW1とし、弾性波伝搬方向に沿う前記第2の電極指の幅をW2とし、前記第1の電極指と前記第2の電極指との電極指中心間距離であるピッチをLとしたときに、
前記第1の電極指のメタライゼーション比(W1/L)が、前記第2の電極指のメタライゼーション比(W2/L)より小さく、
前記第1及び第2の電極指のメタライゼーション比の和(W1/L+W2/L)が、0.65以上、1.00以下であり、かつ前記第1及び第2の電極指の幅の比(W2/W1)が、1.12以上、2.33以下であり、又は、
前記第1及び第2の電極指のメタライゼーション比の和(W1/L+W2/L)が、1.00より大きく、かつ前記第1及び第2の電極指の幅の比(W2/W1)が、1.40以上、2.34以下である、弾性波共振子。 A piezoelectric substrate;
An IDT electrode formed on the piezoelectric substrate;
The IDT electrode has a first electrode finger and a second electrode finger adjacent to the first electrode finger in the elastic wave propagation direction;
Wherein a first width of the electrode fingers and W 1, the width of the second electrode fingers along the elastic wave propagation direction and W 2, wherein the first electrode fingers and said second electrode along the propagation direction of an acoustic wave When the pitch that is the distance between the electrode finger centers with the finger is L,
A metallization ratio (W 1 / L) of the first electrode finger is smaller than a metallization ratio (W 2 / L) of the second electrode finger;
The sum of the metallization ratios of the first and second electrode fingers (W 1 / L + W 2 / L) is 0.65 or more and 1.00 or less, and the width of the first and second electrode fingers The ratio (W 2 / W 1 ) is 1.12 or more and 2.33 or less, or
The sum of the metallization ratios of the first and second electrode fingers (W 1 / L + W 2 / L) is greater than 1.00 and the ratio of the widths of the first and second electrode fingers (W 2 / An elastic wave resonator in which W 1 ) is 1.40 or more and 2.34 or less. - 前記第1及び第2の電極指のメタライゼーション比の和(W1/L+W2/L)が、0.70より大きく、1.00以下であり、かつ前記第1及び第2の電極指の幅の比(W2/W1)が、1.14以上、2.33以下であり、又は、
前記第1及び第2の電極指のメタライゼーション比の和(W1/L+W2/L)が、1.00より大きく、かつ前記第1及び第2の電極指の幅の比(W2/W1)が、1.40以上、2.34以下である、請求項1に記載の弾性波共振子。 The sum of metallization ratios of the first and second electrode fingers (W 1 / L + W 2 / L) is greater than 0.70 and less than or equal to 1.00, and between the first and second electrode fingers The width ratio (W 2 / W 1 ) is 1.14 or more and 2.33 or less, or
The sum of the metallization ratios of the first and second electrode fingers (W 1 / L + W 2 / L) is greater than 1.00 and the ratio of the widths of the first and second electrode fingers (W 2 / The elastic wave resonator according to claim 1, wherein W 1 ) is 1.40 or more and 2.34 or less. - 前記IDT電極が、複数本の前記第1の電極指と、複数本の前記第2の電極指とを有し、弾性波伝搬方向において、前記第1の電極指と、前記第2の電極指とが、交互に配置されている、請求項1又は2に記載の弾性波共振子。 The IDT electrode has a plurality of the first electrode fingers and a plurality of the second electrode fingers, and the first electrode fingers and the second electrode fingers in the elastic wave propagation direction. The elastic wave resonators according to claim 1, wherein and are arranged alternately.
- 前記IDT電極が、複数本の前記第1の電極指と、複数本の前記第2の電極指とを有し、弾性波伝搬方向において、隣り合う2本の前記第1の電極指と、隣り合う2本の前記第2の電極指とが、交互に配置されている、請求項1又は2に記載の弾性波共振子。 The IDT electrode has a plurality of the first electrode fingers and a plurality of the second electrode fingers, and is adjacent to the two adjacent first electrode fingers in the elastic wave propagation direction. The elastic wave resonator according to claim 1 or 2, wherein two matching second electrode fingers are alternately arranged.
- 複数の弾性波共振子を有する弾性波フィルタであって、
前記複数の弾性波共振子のうち、少なくとも1つの弾性波共振子が、請求項1~4のいずれか1項に記載の弾性波共振子である、弾性波フィルタ。 An acoustic wave filter having a plurality of acoustic wave resonators,
The elastic wave filter, wherein at least one of the plurality of elastic wave resonators is the elastic wave resonator according to any one of claims 1 to 4. - 複数の弾性波共振子を有し、帯域通過型の第1のフィルタと、前記第1のフィルタと通過帯域が異なる第2のフィルタとを備える、デュプレクサであって、
前記第1及び第2のフィルタの少なくとも一方の複数の弾性波共振子のうち、少なくとも1つの弾性波共振子が、請求項1~4のいずれか1項に記載の弾性波共振子である、デュプレクサ。 A duplexer having a plurality of acoustic wave resonators, and comprising a band-pass first filter and a second filter having a different pass band from the first filter;
The elastic wave resonator according to any one of claims 1 to 4, wherein at least one of the plurality of elastic wave resonators of the first and second filters is an elastic wave resonator. Duplexer.
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