CN210201798U - Elastic wave device, duplexer, and filter device - Google Patents
Elastic wave device, duplexer, and filter device Download PDFInfo
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- CN210201798U CN210201798U CN201790001548.5U CN201790001548U CN210201798U CN 210201798 U CN210201798 U CN 210201798U CN 201790001548 U CN201790001548 U CN 201790001548U CN 210201798 U CN210201798 U CN 210201798U
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
- H03H9/72—Networks using surface acoustic waves
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Abstract
The utility model provides an elastic wave device, duplexer and filter device can restrain IMD's production and can seek the miniaturization. An elastic wave device (1) is provided with an antenna terminal (3), a signal terminal, and a plurality of resonators (S1, S2, P1, P2) on a substrate (2) having piezoelectricity, wherein the thickness of an electrode film of an IDT electrode of a resonator (S1) closest to the antenna terminal (3) is the thinnest among the thicknesses of electrode films of IDT electrodes of all resonators, or the weight per unit area of an IDT electrode of a resonator (S1) closest to the antenna terminal (3) is the lightest among the weights per unit area of IDT electrodes of all resonators.
Description
Technical Field
The present invention relates to an elastic wave device in which a plurality of resonators having IDT electrodes are formed on the same plane of a substrate having piezoelectricity, and a duplexer and a filter device having the elastic wave device.
Background
Conventionally, duplexers and the like using elastic waves have been widely used in smart phones, mobile phones, and the like. A duplexer using an elastic wave is a nonlinear device. Therefore, there is a problem that intermodulation distortion (IMD) is easily generated.
In the duplexer having an elastic wave filter described in patent document 1 below, the series arm resonator or the parallel arm resonator closest to the antenna terminal is divided without changing the capacitance. This increases the area of the series-arm resonator or the parallel-arm resonator, and reduces the power consumption per unit area. Therefore, the generation of IMD can be suppressed.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open No. 2007-74698
SUMMERY OF THE UTILITY MODEL
Problem to be solved by utility model
However, when the series arm resonator and the parallel arm resonator are divided as described in patent document 1, the series arm resonator and the parallel arm resonator have a large area. Therefore, there is a problem that miniaturization becomes difficult.
An object of the utility model is to provide a can restrain the production of IMD and can seek miniaturized elastic wave device. Another object of the present invention is to provide a duplexer and a filter device having the elastic wave device of the present invention.
Means for solving the problems
The first utility model of the application relates to an elastic wave device possesses: a substrate having piezoelectricity; an antenna terminal provided on the piezoelectric substrate and connected to an antenna; a signal terminal provided on the substrate having piezoelectricity, for inputting and outputting a signal; and a plurality of resonators that are formed on the substrate having piezoelectricity, each of the plurality of resonators having an IDT electrode, each of the IDT electrodes having an electrode film that is a metal film made of a single metal or a single alloy or a laminated metal film obtained by laminating a plurality of metal films, the plurality of resonators having resonators connected between the antenna terminal and the signal terminal, the thickness of the electrode film of the IDT electrode of the resonator closest to the antenna terminal among the plurality of resonators being the thinnest among the thicknesses of the electrode films of the IDT electrodes of all the resonators.
The second utility model of the present application relates to an elastic wave device possesses: a substrate having piezoelectricity; an antenna terminal provided on the piezoelectric substrate and connected to an antenna; a signal terminal provided on the substrate having piezoelectricity, for inputting and outputting a signal; and a plurality of resonators that are formed on the substrate having piezoelectricity, each of the plurality of resonators having an IDT electrode, each of the IDT electrodes having an electrode film that is a metal film made of a single metal or a single alloy or a laminated metal film obtained by laminating a plurality of metal films, the plurality of resonators having resonators connected between the antenna terminal and the signal terminal, wherein a weight per unit area of the IDT electrode of the resonator closest to the antenna terminal is the lightest among weights per unit area of the IDT electrodes of all the resonators.
Hereinafter, the first utility model and the second utility model will be collectively referred to and simply referred to as the present invention.
In a specific aspect of the acoustic wave device according to the present invention, a thickness of a metal film having a highest density in the electrode films constituting the IDT electrode of the resonator closest to the antenna terminal is thinner than a thickness of a metal film having a highest density in the electrode films in the IDT electrodes of the other resonators.
In another specific aspect of the elastic wave device according to the present invention, the resonator closest to the antenna terminal has a size in the elastic wave propagation direction that is not the largest among the sizes in the elastic wave propagation direction of all the resonators. In this case, further miniaturization can be achieved.
In another specific aspect of the elastic wave device according to the present invention, the resonator having the largest dimension in the elastic wave propagation direction among the plurality of resonators is a longitudinally coupled resonator type elastic wave filter. In this case, the elastic wave device having the longitudinally coupled resonator-type elastic wave filter can be further miniaturized.
In still another specific aspect of the elastic wave device according to the present invention, the metal film having the highest density among the electrode films is one selected from the group consisting of Pt, Mo, and W.
In still another specific aspect of the elastic wave device according to the present invention, the plurality of resonators include: a series arm resonator provided in a series arm connecting the antenna terminal and the signal terminal; and a parallel arm resonator provided in a parallel arm connecting the series arm and a ground potential. In this manner, the elastic wave device including the series-arm resonators and the parallel-arm resonators may be a ladder filter.
In still another specific aspect of the elastic wave device according to the present invention, the plurality of resonators have, as the resonator, a longitudinally coupled resonator type elastic wave filter provided in a series arm connecting the antenna terminal and the signal terminal.
The utility model relates to a duplexer possesses: a first bandpass type filter; and a second band pass filter, commonly connected to the antenna terminal, the passband being different from the first band pass filter, the first band pass filter and at least one of the second band pass filters having an elastic wave device according to the present invention.
The utility model relates to a filter device possesses: a first bandpass filter constituted by an elastic wave device constituted according to the present invention; and at least one band pass filter commonly connected to the antenna terminal of the first band pass filter.
Effect of the utility model
According to the present invention, it is possible to reduce the size of an acoustic wave device, a duplexer, and a filter device while suppressing the generation of IMD.
Drawings
Fig. 1 is a plan view showing an electrode structure of an elastic wave device according to a first embodiment of the present invention.
Fig. 2 is a circuit diagram of an elastic wave device according to a first embodiment of the present invention.
Fig. 3 is a plan view showing an electrode structure of a series-arm resonator closest to an antenna terminal used in the first embodiment of the present invention
Fig. 4 is a partial front cross-sectional view for explaining a laminated structure of electrode fingers of IDT electrodes of series-arm resonators used in the first embodiment of the present invention.
Fig. 5 is a circuit diagram of a filter device using an elastic wave device according to a first embodiment of the present invention.
Fig. 6 is a graph showing IMD characteristics in the case where the total thickness of IDT electrodes in the series-arm resonator closest to the antenna terminal is 600nm, 490nm or 348 nm.
Fig. 7 is a diagram showing IMD characteristics when the normalized weight of the IDT electrode of the acoustic wave resonator closest to the antenna terminal is 1.00 or 0.90.
Fig. 8 is a circuit diagram of an elastic wave device according to a third embodiment of the present invention.
Fig. 9 is a plan view showing an electrode structure of an elastic wave device according to a fourth embodiment of the present invention.
Fig. 10 is a circuit diagram of an elastic wave device according to a fourth embodiment of the present invention.
Fig. 11 is a circuit diagram for explaining a duplexer according to a fifth embodiment of the present invention.
Detailed Description
Hereinafter, specific embodiments of the present invention will be described with reference to the drawings, to thereby clarify the present invention.
Note that the embodiments described in the present specification are exemplary, and partial replacement or combination of the structures may be performed between different embodiments.
(first embodiment)
Fig. 1 is a plan view showing an electrode structure of an acoustic wave device according to a first embodiment of the present invention, and fig. 2 is a circuit diagram of the acoustic wave device according to the first embodiment of the present invention.
The elastic wave device 1 is a reception filter of Band 5.
An antenna terminal 3, a receiving terminal 4 as a signal terminal, and ground terminals 5 to 8 connected to a ground potential are provided on a substrate 2 having piezoelectricity.
As shown in fig. 2, in elastic wave device 1, in the series arm connecting antenna terminal 3 and reception terminal 4, a plurality of series arm resonators S1 and S2 and longitudinally coupled resonator 9, which is a longitudinally coupled resonator type elastic wave filter, are connected in series with each other. Further, a parallel arm resonator P1 is connected between the ground potential and the connection point between the series arm resonators S1 and S2. A parallel arm resonator P2 is connected between the ground potential and the connection point between the series arm resonator S2 and the longitudinally coupled resonator 9. That is, elastic wave device 1 includes series-arm resonators S1 and S2, longitudinally-coupled resonator 9, and parallel-arm resonators P1 and P2 as a plurality of resonators provided on substrate 2 having piezoelectricity.
However, as shown in fig. 1 and 2, the resonator electrically closest to the antenna terminal 3 is the series arm resonator S1. The series-arm resonator S1 is formed of a single-port type elastic wave resonator. Fig. 3 is a plan view showing the electrode configuration of single-port type elastic wave resonator 11 as series-arm resonator S1. In the single-port acoustic wave resonator 11, reflectors 13 and 14 are provided on both sides of the IDT electrode 12 in the acoustic wave propagation direction. The IDT electrode 12 includes a plurality of first electrode fingers 12a and a plurality of second electrode fingers 12b alternately inserted into each other.
The electrode materials for constituting the antenna terminal 3, the reception terminal 4, the ground terminals 5 to 8, the series-arm resonators S1 and S2, the longitudinal coupling resonator 9, and the parallel-arm resonators P1 and P2 are not particularly limited. For example, metals such as Pt, Mo, W, Al, Cu, Au, and Ti, or alloys mainly composed of these metals such as AlCu and NiCr can be used. In the present invention, the IDT electrode has an electrode film, and the electrode film may be a metal film made of a single metal or a single alloy, or may be a laminated metal film in which a plurality of metal films are laminated. In the present embodiment, the electrode film of the IDT electrode 12 of the series-arm resonator S1 is formed of a laminated metal film in which a plurality of metal films are laminated. Fig. 4 is a partial front cross-sectional view for explaining a stacked structure of IDT electrodes 12 in a single-port type acoustic wave resonator as series-arm resonator S1. Here, a cross-sectional portion of one electrode finger including the IDT electrode 12 is illustrated.
On the substrate 2 having piezoelectricity, among electrode films of the IDT electrode 12, a Pt film 12c, a Ti film 12d, an Al film 12e, and a Ti film 12f are laminated in this order from the substrate 2 having piezoelectricity.
Although the electrode structure is schematically illustrated in fig. 1 and 2, the first dielectric film 16 is laminated so as to cover the electrode structure as illustrated in fig. 4. The first dielectric film 16 is made of SiO2And (4) forming. By laminating like SiO2A dielectric film having a positive temperature coefficient of frequency like a film can improve the temperature characteristic of frequency. Further, a second dielectric film 17 made of Si is laminated on the first dielectric film 16 above the reaction kettle. The second dielectric film 17 is provided as a protective film or a frequency adjustment film. However, in the present invention, the first dielectric film 16 and the second dielectric film 17 may not be provided.
Fig. 5 is a circuit diagram of a filter device using elastic wave device 1. In filter device 15, antenna terminal 3 of elastic wave device 1 is connected to antenna 18. Further, an amplifier 19 is connected to the subsequent stage of the reception terminal 4.
The elastic wave device 1 is characterized in that the thickness of the laminated metal film, which is the electrode film of the IDT electrode of the series-arm resonator S1 that is the resonator closest to the antenna terminal 3 among all the resonators, is the thinnest among the thicknesses of the laminated metal films, which are the electrode films of the IDT electrodes of all the resonators. This can suppress the generation of IMD and achieve miniaturization.
(second embodiment)
An acoustic wave device according to a second embodiment of the present invention has the same structure as the acoustic wave device 1 according to the first embodiment. In the second embodiment, the thickness of the laminated metal film, which is the electrode film of the IDT electrode of the resonator closest to the antenna terminal among the plurality of resonators, is not particularly limited. The second embodiment is characterized in that the weight per unit area of the IDT electrode of the series-arm resonator, which is the resonator closest to the antenna terminal, is the lightest among the weights per unit area of the IDT electrodes in all the resonators. The other configurations are the same as those of the first embodiment.
In addition, although the weight per unit area of the IDT electrode of the series-arm resonator closest to the antenna terminal is set to be the lightest among the weights per unit area of the IDT electrodes of all the resonators in the second embodiment, the structure of the first embodiment may be further provided in which the thickness of the laminated metal film, which is the electrode film of the IDT electrode of the series-arm resonator closest to the antenna terminal, is the thinnest among the thicknesses of the laminated metal films, which are the electrode films of the IDT electrodes of all the resonators, and in this case, the occurrence of IMDs can be more effectively suppressed.
The elastic wave devices according to the first and second embodiments are described based on specific experimental examples, which can be made smaller and can suppress the generation of IMDs. A first experimental example will be described with reference to fig. 6. Fig. 6 is a diagram showing IMD characteristics of Band5, that is, IMD characteristics in the 2Tx-Rx Band, in a case where the total thickness of IDT electrodes of series-arm resonators closest to the antenna terminal is set to 600nm, 490nm, or 348nm in the elastic wave device. The design parameters of the resonator a, the resonator B, and the resonator C in fig. 6 are shown in table 1 below, and the film thicknesses of the IDT electrodes in the resonator a, the resonator B, and the resonator C are shown in table 2 below.
[ Table 1]
[ Table 2]
In table 1, λ is a wavelength defined by the electrode finger pitch of the IDT electrode.
The pair number is the pair number of electrode fingers in the IDT electrode, and the duty ratio is the duty ratio of the IDT electrode.
As shown in table 2, in any of the resonators a to C, a Pt film, a Ti film, an Al film, and a Ti film were sequentially stacked in this order from the substrate side having piezoelectricity.
As shown in table 2, the thicknesses of the Ti film, the Al film, and the Ti film were all the same. The thickness of the Pt film was varied so that the total thickness of the IDT electrode was 600nm, 490nm, or 348 nm. Therefore, when the weight of the IDT electrode is normalized with respect to the resonator a, the normalized weight of the IDT electrode in the resonator B is 0.70, and the normalized weight of the IDT electrode in the resonator C is 0.32. Since the IDT electrodes of the resonators a, B, and C have the same area, the weight per unit area of the IDT electrodes of the resonators a, B, and C is represented by the normalized weight. Therefore, the resonator having the IDT electrode having the lightest weight per unit area is one of the resonators a, B, and C.
Table 3 below shows IMD (dBm) shown in FIG. 6.
[ Table 3]
As is clear from fig. 6 and table 3, in the resonators a to C, at any one of frequencies of 869MHz, 881.5MHz, and 894MHz, the IMD characteristics can be improved by the resonator C as compared with the resonators a and B.
In general, in a filter device in which a plurality of resonators are connected between an antenna terminal and a signal terminal, the resonator electrically closest to the antenna terminal has the greatest influence on IMD characteristics.
In the elastic wave device according to the first embodiment, the thickness of the laminated metal film of the IDT electrode of the series-arm resonator S1, which is the resonator closest to the antenna terminal, among all the resonators is set to be the thinnest among the thicknesses of the laminated metal films of the IDT electrodes of all the resonators. Therefore, the generation of IMD can be effectively suppressed.
In addition, in the acoustic wave device according to the first embodiment, by devising the thickness of the laminated metal film of the IDT electrode of the series-arm resonator, it is possible to suppress the generation of IMD. The duplexer described in patent document 1 uses a structure in which the series arm resonator or the parallel arm resonator closest to the antenna terminal is divided without changing the capacitance. Therefore, the area of the series-arm resonator or the parallel-arm resonator closest to the antenna terminal becomes large, and miniaturization is difficult. In contrast, in the acoustic wave device, by adjusting the thickness of the electrode film of the IDT electrode of the series-arm resonator, the generation of IMDs can be suppressed. Therefore, the size of the series arm resonator closest to the antenna terminal 3 can be avoided, and the size of the elastic wave device 1 can be reduced.
Further, it is preferable that the thickness of the Pt film, which is the film thickness of the metal film having the highest density among the laminated metal films, which are the electrode films constituting the IDT electrodes of the series-arm resonators, is thinner than the thickness of the Pt film, which is the metal film having the highest density among the laminated metal films, which are the electrode films among the IDT electrodes of the other resonators. This can more effectively suppress the generation of IMDs in the series-arm resonator S1.
In the first embodiment, all resonators have a laminated metal film in which the same kind of metal films are laminated in the same order. More specifically, the film thicknesses of the other metal films are all set to be equal except for the film thickness of the metal film having the highest density.
In the above embodiment, the laminated structures of the laminated metal films are made equal in all the resonators except for the film thickness of the metal film having the highest density. However, in the present invention, when the electrode film is a laminated metal film, the laminated structure is not limited to this. That is, if the thickness of the laminated metal film in the IDT electrode in the resonator closest to the antenna terminal is the smallest among the thicknesses of the laminated metal films in the IDT electrodes in all the resonators, the generation of IMDs can be effectively suppressed as described above.
Preferably, a film thickness of a metal film having the highest density among the laminated metal films, which are electrode films constituting the IDT electrode in the resonator closest to the antenna terminal, is thinner than a film thickness of a metal film having the highest density among the laminated metal films, which are electrode films in the IDT electrodes in the other resonators. In this case, the metal film having the highest density in the resonator closest to the antenna terminal and the metal film having the highest density in the other resonators may be composed of different metals.
It is described that generation of IMD can be effectively suppressed in the resonator C in which the thickness of the IDT electrode is the thinnest among the resonators a to C. As is clear from a comparison of normalized weights of the IDT electrodes of the resonators a to C in table 2, generation of IMD can be suppressed by minimizing the weight per unit area of the IDT electrode in the resonator C.
The reason why the IMD characteristics can be improved by minimizing the thickness of the electrode film constituting the IDT electrode or by minimizing the weight per unit area in the series-arm resonator closest to the antenna terminal is not clear. The inventor experimentally found that: the thickness of an electrode film of a resonator closest to the antenna terminal is minimized or the weight per unit area is minimized, so that the IMD characteristics can be improved.
Next, a second experimental example will be described with reference to fig. 7. Fig. 7 is a diagram showing IMD characteristics of 2Tx-Rx bands of Band5 of the resonator D and the resonator E shown in table 4 below as the series-arm resonator S1.
[ Table 4]
In table 4, λ is a wavelength defined by the electrode finger pitch of the IDT electrode.
In the resonator D, a laminated metal film obtained by laminating an Al film having a thickness of 372nm on a Ti film having a thickness of 10nm was used as an electrode film. In the resonator E, a laminated metal film obtained by laminating an Al film having a thickness of 332nm on a Ti film having a thickness of 10nm was used as an electrode film. Therefore, the thickness of the laminated metal film of the IDT electrode in the resonator E is made thinner than the thickness of the laminated metal film of the IDT electrode in the resonator D. As is clear from table 4, when the weight of the IDT electrode in the resonator D is 1.00, the normalized weight of the IDT electrode in the resonator E is 0.90. Thus, the resonator E is lighter than the resonator D with respect to the weight per unit area of the IDT electrode.
Table 5 below shows imd (dbm) of the resonator D and the resonator E at 869MHz, 881.5MHz, and 894MHz shown in fig. 7.
[ Table 5]
As is clear from table 5 and fig. 7, in the resonator E, the generation of IMD can be effectively suppressed as compared with the resonator D.
Fig. 8 is a circuit diagram of an elastic wave device according to a third embodiment of the present invention. In the elastic wave device 21, series arm resonators S11 and S12 are disposed in a series arm connecting the antenna terminal 3 and the reception terminal 4 as a signal terminal. A parallel arm resonator P11 is connected between the antenna terminal 3 and the ground potential. A parallel-arm resonator P12 is connected between the ground potential and the connection point between the series-arm resonators S11 and S12. Among the series-arm resonators S11 and S12 and the parallel-arm resonators P11 and P12 which are a plurality of resonators, the resonator closest to the antenna terminal 3 is the parallel-arm resonator P11. In this manner, the resonator closest to the antenna terminal 3 may be the parallel arm resonator P11 instead of the series arm resonator S11.
In this case, the thickness of the electrode film of the IDT electrode of the parallel-arm resonator P11 closest to the antenna terminal 3 among the plurality of series-arm resonators S11 and S12 and the plurality of parallel-arm resonators P11 and P12 may be smaller than the thickness of the electrode film of the IDT electrode constituting the remaining series-arm resonators S11 and S12 and the parallel-arm resonator P12. As described above, the weight per unit area of the IDT electrode of the parallel-arm resonator P11 closest to the antenna terminal 3 may be the lightest among the weights per unit area of the IDT electrodes in all the resonators. Thus, as in the first and second embodiments, IMD characteristics can be improved and miniaturization can be achieved. One of the remaining series-arm resonators other than the parallel-arm resonator P11 closest to the antenna terminal 3 may be provided, and one of the remaining parallel-arm resonators other than the parallel-arm resonator P11 closest to the antenna terminal 3 may be provided.
Fig. 9 is a plan view showing an electrode structure of an elastic wave device according to a fourth embodiment, and fig. 10 is a circuit diagram of the elastic wave device according to the fourth embodiment.
In elastic wave device 31 of the fourth embodiment, series-arm resonator S3 is provided in place of longitudinal coupling type resonator 9 of the first embodiment. That is, in the series arm connecting the antenna terminal 3 and the reception terminal 4 as a signal terminal, the plurality of series arm resonators S1, S2, and S3 are connected in series with each other. In the present embodiment, elastic wave device 31 includes series-arm resonators S1, S2, and S3 and parallel-arm resonators P1 and P2 as a plurality of resonators. Thereby, a ladder filter is constructed.
The thickness of the electrode film of the IDT electrode of the series-arm resonator S1 closest to the antenna terminal 3 among the series-arm resonators S1, S2, and S3 may be smaller than the thickness of the electrode film of the IDT electrode constituting the remaining series-arm resonators S2 and S3. As described above, the weight per unit area of the IDT electrode of the series-arm resonator S1 closest to the antenna terminal 3 may be the lightest among the weights per unit area of the IDT electrodes in all the resonators. Thus, as in the first and second embodiments, IMD characteristics can be improved and miniaturization can be achieved.
Fig. 11 is a circuit diagram for explaining a duplexer according to a fifth embodiment of the present invention. The duplexer 41 has a common terminal 43 connected to the antenna 42. Elastic wave device 1 according to the first embodiment is connected to common terminal 43 as a first bandpass filter. That is, the antenna terminal 3 is connected to the common terminal 43. A second bandpass filter 44 is also connected to the common terminal 43. The second bandpass filter 44 is a transmission filter having a transmission terminal 45 and an output terminal 46. The output terminal 46 is connected to the common terminal 43. As described above, duplexer 41 includes a reception filter as a first bandpass filter and a transmission filter as a second bandpass filter 44, which are configured by acoustic wave device 1.
In duplexer 41 according to the fifth embodiment, the reception filter as the first bandpass filter is formed of acoustic wave device 1 according to the embodiment of the present invention. However, in the duplexer according to the present invention, the second bandpass filter may be constituted by an elastic wave device other than the first bandpass filter, and both the first bandpass filter and the second bandpass filter may be constituted by an elastic wave device according to the present invention.
As shown by the broken line in fig. 5, not only elastic wave device 1 as the first bandpass filter but also two or more bandpass filters 52 and 53 having different pass bands may be connected in common to common terminal 51. In this case, a bundled filter device suitable for Carrier Aggregation (CA) can be configured. When used for Carrier Aggregation (CA) or the like, elastic wave device 1 and at least one bandpass filter having different pass bands may be connected in common to common terminal 51.
Although the embodiments of the reception filter have been described in the first to third embodiments, the elastic wave device according to the present invention can be applied to a transmission filter. That is, in the transmission filter, the resonator that most affects the IMD characteristic is also the resonator closest to the antenna terminal. Therefore, the present invention can also be applied to a transmission filter having a plurality of series-arm resonators in a series arm.
Description of the reference numerals
1: an elastic wave device;
2: a substrate having piezoelectricity;
3: an antenna terminal;
4: a receiving terminal;
5-8: a ground terminal;
9: a resonator;
11: a single-port type elastic wave resonator;
12: an IDT electrode;
12 a: a first electrode finger;
12 b: a second electrode finger;
12 c: a Pt film;
12 d: a Ti film;
12 e: an Al film;
12 f: a Ti film;
13. 14: a reflector;
15: a filter means;
16: a first dielectric film;
17: a second dielectric film;
18: an antenna;
19: an amplifier;
21. 31: an elastic wave device;
41: a duplexer;
42: an antenna;
43: a common terminal;
44: a second bandpass filter;
45: a transmission terminal;
46: an output terminal;
51: a common terminal;
52. 53: a band-pass filter;
p1, P2, P11, P12: a parallel arm resonator;
s1, S2, S3, S11, S12: a series arm resonator.
Claims (18)
1. An elastic wave device is characterized by comprising:
a substrate having piezoelectricity;
an antenna terminal provided on the piezoelectric substrate and connected to an antenna;
a signal terminal provided on the substrate having piezoelectricity, for inputting and outputting a signal; and
a plurality of resonators formed on the substrate having piezoelectricity,
each of the plurality of resonators has an IDT electrode, each of the IDT electrodes has an electrode film that is a metal film made of a single metal or a single alloy or a laminated metal film obtained by laminating a plurality of metal films,
the plurality of resonators have resonators connected between the antenna terminal and the signal terminal,
the thickness of the electrode film of the IDT electrode of the resonator closest to the antenna terminal among the plurality of resonators is the thinnest among the thicknesses of the electrode films of the IDT electrodes of all the resonators.
2. The elastic wave device according to claim 1,
the film thickness of the metal film having the highest density among the electrode films of the IDT electrodes constituting the resonator closest to the antenna terminal is thinner than the film thickness of the metal film having the highest density among the electrode films of the IDT electrodes of the other resonators.
3. The elastic wave device according to claim 1,
the resonator closest to the antenna terminal has a dimension along the elastic wave propagation direction that is not the largest among the dimensions along the elastic wave propagation direction in all of the resonators.
4. The elastic wave device according to claim 1,
the resonator having the largest dimension in the elastic wave propagation direction among the plurality of resonators is a longitudinally coupled resonator type elastic wave filter.
5. The elastic wave device according to claim 1,
the metal film having the highest density among the electrode films is one selected from the group consisting of Pt, Mo, and W.
6. The elastic wave device according to claim 1,
the plurality of resonators have:
a series arm resonator provided in a series arm connecting the antenna terminal and the signal terminal; and
and a parallel arm resonator provided in a parallel arm connecting the series arm and a ground potential.
7. The elastic wave device according to claim 6,
the elastic wave device is a ladder filter.
8. The elastic wave device according to claim 1,
the plurality of resonators have, as the resonator, a longitudinally coupled resonator type elastic wave filter provided in a series arm connecting the antenna terminal and the signal terminal.
9. An elastic wave device is characterized by comprising:
a substrate having piezoelectricity;
an antenna terminal provided on the piezoelectric substrate and connected to an antenna;
a signal terminal provided on the substrate having piezoelectricity, for inputting and outputting a signal; and
a plurality of resonators formed on the substrate having piezoelectricity,
each of the plurality of resonators has an IDT electrode, each of the IDT electrodes has an electrode film that is a metal film made of a single metal or a single alloy or a laminated metal film obtained by laminating a plurality of metal films,
the plurality of resonators have resonators connected between the antenna terminal and the signal terminal,
the weight per unit area of the IDT electrode of the resonator closest to the antenna terminal is lightest among the weights per unit area of the IDT electrodes of all the resonators.
10. The elastic wave device according to claim 9,
the film thickness of the metal film having the highest density among the electrode films of the IDT electrodes constituting the resonator closest to the antenna terminal is thinner than the film thickness of the metal film having the highest density among the electrode films of the IDT electrodes of the other resonators.
11. The elastic wave device according to claim 9,
the resonator closest to the antenna terminal has a dimension along the elastic wave propagation direction that is not the largest among the dimensions along the elastic wave propagation direction in all of the resonators.
12. The elastic wave device according to claim 9,
the resonator having the largest dimension in the elastic wave propagation direction among the plurality of resonators is a longitudinally coupled resonator type elastic wave filter.
13. The elastic wave device according to claim 9,
the metal film having the highest density among the electrode films is one selected from the group consisting of Pt, Mo, and W.
14. The elastic wave device according to claim 9,
the plurality of resonators have:
a series arm resonator provided in a series arm connecting the antenna terminal and the signal terminal; and
and a parallel arm resonator provided in a parallel arm connecting the series arm and a ground potential.
15. The elastic wave device according to claim 14,
the elastic wave device is a ladder filter.
16. The elastic wave device according to claim 9,
the plurality of resonators have, as the resonator, a longitudinally coupled resonator type elastic wave filter provided in a series arm connecting the antenna terminal and the signal terminal.
17. A duplexer, comprising:
a first bandpass type filter; and
a second band-pass filter commonly connected to the antenna terminal, the second band-pass filter having a different pass band from the first band-pass filter,
at least one of the first band-pass filter and the second band-pass filter has the elastic wave device according to any one of claims 1 to 16.
18. A filter device is characterized by comprising:
a first bandpass filter comprising the elastic wave device according to any one of claims 1 to 16; and
at least one band pass filter commonly connected to the antenna terminal of the first band pass filter.
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| JP2017019661 | 2017-02-06 | ||
| JP2017-019661 | 2017-02-06 | ||
| PCT/JP2017/046447 WO2018142812A1 (en) | 2017-02-06 | 2017-12-25 | Acoustic wave device, duplexer, and filter device |
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| CN210201798U true CN210201798U (en) | 2020-03-27 |
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| CN201790001548.5U Active CN210201798U (en) | 2017-02-06 | 2017-12-25 | Elastic wave device, duplexer, and filter device |
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| WO (1) | WO2018142812A1 (en) |
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| JP7151668B2 (en) * | 2018-11-08 | 2022-10-12 | 株式会社村田製作所 | multiplexer |
| WO2020129470A1 (en) * | 2018-12-20 | 2020-06-25 | 株式会社村田製作所 | Multiplexer |
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| JP2000244275A (en) * | 1999-02-19 | 2000-09-08 | Murata Mfg Co Ltd | Saw resonator filter |
| JP2005005763A (en) * | 2003-06-09 | 2005-01-06 | Alps Electric Co Ltd | Surface acoustic wave element and filter |
| EP2299595A4 (en) * | 2008-06-30 | 2013-01-23 | Murata Manufacturing Co | Band elimination filter |
| JP6034222B2 (en) * | 2012-12-27 | 2016-11-30 | 京セラ株式会社 | Elastic wave device, duplexer and communication module |
| WO2015198905A1 (en) * | 2014-06-27 | 2015-12-30 | 株式会社村田製作所 | Elastic wave device |
| JP6424897B2 (en) * | 2014-12-01 | 2018-11-21 | 株式会社村田製作所 | Elastic wave resonator, elastic wave filter, duplexer and elastic wave device |
| KR102043411B1 (en) * | 2015-06-25 | 2019-11-12 | 가부시키가이샤 무라타 세이사쿠쇼 | Multiplexers, High-Frequency Front-End Circuits and Communications Devices |
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