WO2016154449A1 - Feed-forward bidirectional implanted split-gate flash memory cell - Google Patents

Feed-forward bidirectional implanted split-gate flash memory cell Download PDF

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Publication number
WO2016154449A1
WO2016154449A1 PCT/US2016/024037 US2016024037W WO2016154449A1 WO 2016154449 A1 WO2016154449 A1 WO 2016154449A1 US 2016024037 W US2016024037 W US 2016024037W WO 2016154449 A1 WO2016154449 A1 WO 2016154449A1
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Prior art keywords
select gate
gate
cell
pocket
implant
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PCT/US2016/024037
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French (fr)
Inventor
Xiangzheng Bo
Douglas Tad GRIDER
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Texas Instruments Incorporated
Texas Instruments Japan Limited
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Application filed by Texas Instruments Incorporated, Texas Instruments Japan Limited filed Critical Texas Instruments Incorporated
Priority to JP2017550145A priority Critical patent/JP6974684B2/en
Priority to EP16769704.4A priority patent/EP3274996A4/en
Priority to CN201680011401.4A priority patent/CN107251149B/en
Publication of WO2016154449A1 publication Critical patent/WO2016154449A1/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H01L29/42328—Gate electrodes for transistors with a floating gate with at least one additional gate other than the floating gate and the control gate, e.g. program gate, erase gate or select gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0441—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND

Definitions

  • This relates to split-gate flash memory cells.
  • Flash memory is an improved version of electrically erasable, programmable read-only memory (EEPROM) which is capable of block-by-block erasing. Flash memory is used in a variety of applications that require programmability with no loss of memory data during power down (non-volatility).
  • Split-gate flash memory cells have been widely used in the semiconductor industry, due to low leakage controlled by a word line (WL) or select gate transistor generally including doped polysilicon, lower program current, higher endurance and improved data retention.
  • WL word line
  • select gate transistor generally including doped polysilicon
  • a particular flash memory cell is a split-gate flash cell that includes 2 side-by-side transistor structures that share a common source (or drain) region in the middle of the flash memory cell.
  • the select gate is formed to couple voltage onto the floating gate (FG) and to control a channel region of the transistor. To accomplish these purposes, the select gate is physically formed directly overlying the substrate and overlying (or adjacent) the FG.
  • Split-gate flash cells are widely used in semiconductor industry, due to their advantage (over convention flash cells) of lower leakage controlled by select gate transistor, lower program current, higher endurance and improved data retention.
  • a split-gate flash memory cell includes a semiconductor surface.
  • a first control gate (CG) on a first floating gate (FG) and a second CG on a second FG are each on a tunnel gate dielectric layer on the semiconductor surface.
  • a common source or common drain in the semiconductor surface is between the first and second FGs.
  • a first select gate and a second select gate are on a select gate dielectric layer between a first BL source or drain (S/D) and the first FG and between a second BL S/D and the second FG, respectively.
  • the first select gate has a first pocket region that has a first doping distribution different from a second doping distribution in a second pocket region associated with the second select gate, which reduces a variation in read current (Ir) for the cell between measuring Ir using the first select gate and measuring Ir using the second select gate.
  • FIG. 1 is a flow chart of steps in an example method for fabricating a feed-forward bidirectional pocket implanted split-gate flash cell, according to an example embodiment.
  • FIG. 2A is a cross sectional depiction of an example feed-forward bidirectional pocket implanted split-gate flash cell, according to an example embodiment.
  • FIG. 2B is a cross sectional depiction of the feed-forward bidirectional pocket implanted split-gate flash cell of FIG. 2A, with the silicide layer removed depicting the respective angled pocket implants with arrows provided to show example angles that make up the bi-directional pocket implant.
  • FIG. 3 is a block diagram depiction of a monolithic IC processor chip combination including a non-volatile memory, including an array of interconnected feed-forward bidirectional pocket implanted split-gate flash cells, according to an example embodiment.
  • FIG. 4 shows normalized Ir distribution data for cells across a wafer for even odd select gate reads in table and plot form at the erased state using a BL reading voltage of 1.2V and a 12.5 V erase voltage.
  • FIG. 5 is a plot of normalized Ir versus select gate CD, which evidences (for the particular split-gate flash cell design tested) that Ir monotonically increases with increasing select gate CD.
  • the select gate length becomes shorter, and thus more susceptible to process variation, such as to gate length variation between the respective select gates on opposite ends of the cell (referred to herein as even/odd select gates, and their length difference an even/odd select gate critical dimension (CD) variation) and implant doping variation for implants that influence the select gate threshold voltage (Vt).
  • even/odd select gates gate length variation between the respective select gates on opposite ends of the cell
  • CD even/odd select gate critical dimension
  • Vt implant doping variation for implants that influence the select gate threshold voltage
  • Broadening of the select gate Vt distribution within the die and die-to-die across the substrate translates into a larger reading current (Ir) distribution within the die and die-to-die across the substrate, and into reduced flash circuit design margins.
  • the WL photo-alignment margin is tightened, such as by employing improved lithography apparatus.
  • tightening of the select gate photo alignment margin is limited in effectiveness, because the alignment margin cannot be made to be zero, so that the even/odd select flash cell CD difference generally always exists.
  • Example embodiments use even/odd select gate CD in-line process control data that is fed-forward for determining the bidirectional pocket implants to compensate for select gate CD alignment margin. Flash orientation is recognized to be restricted to 1 direction, which enables a 2-rotation implant.
  • the implant parameters (dose, energy and/or angle) for the even select gate side and for odd select gate side of the split-gate flash cell can be tuned respectively, based on in-line even/odd select gate CD data, with different implant parameters for each of the 2 rotations used as compensation for the even/odd select gate CD difference.
  • Tightened erase split-gate flash cell Ir is a result of bidirectional pocket implants, which improves flash design and process margins.
  • Disclosed embodiments can generally be applied to all source or drain center-shared split-gate flash cell devices.
  • FIG. 1 is a flow chart of steps in an example method 100 for fabricating a feed-forward bidirectional pocket implanted split-gate flash cell, according to an example embodiment.
  • the split-gate flash cell can be based on either n-channel metal-oxide semiconductor (NMOS) or p-channel MOS (PMOS) transistors.
  • NMOS transistors may generally be described herein, this information is also useful for PMOS transistors by substituting the n-doped regions with p-doping and vice versa.
  • Disclosed embodiments can be applied to NOR or NAND-based flash memory designs, which allow different pocket implants to be used for respective pocket regions of the split-gate flash cell.
  • Step 101 includes providing a substrate having a semiconductor surface including a first CG on a first FG and a second CG on a second FG, each on a tunnel gate dielectric layer on the semiconductor surface.
  • the tunnel gate dielectric layer 211 such as a dielectric oxide layer, may be between about 50 Angstroms and 120 Angstroms in thickness.
  • the tunnel gate dielectric layer is selected to be relatively thin to allow charge transfer to the FGs above (during programming or erasing), but thick enough to provide good charge retention during non-programming and non-erasing operation. Because the FGs are electrically isolated by their tunnel gate dielectric layer from the semiconductor surface, electrons reaching it are trapped until they are removed by another application of electric field (e.g., an applied voltage or ultraviolet (UV) light as in EPROM).
  • an applied voltage or ultraviolet (UV) light as in EPROM.
  • a common source or common drain is in the semiconductor surface between the first CG/FG and second CG/FG.
  • a first select gate is on a select gate dielectric layer between a first BL source or drain (S/D) in the semiconductor surface and the first FG.
  • a second select gate is on the select gate dielectric layer between a second BL S/D in the semiconductor surface and the second FG.
  • the substrate can include silicon, silicon-germanium or other semiconductor materials including III-V or II- VI materials, and can include a bulk substrate or an epitaxial layer on a bulk substrate.
  • SiGe silicon/germanium
  • the first CG, first FG, first select gate, second CG, second FG and second select gate can all include polysilicon gates.
  • other possible gate materials include metals for metal-comprising gates for the CGs, FGs and select gates.
  • the select gates e.g., polysilicon gates
  • the select gates are formed after the formation of the CG/FG stacks.
  • step 102 based on a CD of the first select gate and a CD of the second select gate, a set of first pocket implant parameters are selected including a first dose, and a second set of pocket implant parameters are selected including a second dose.
  • select gate misalignment data is useful instead of select gate CD data to determine the pocket implant parameters, where the select gate misalignment data can be translated to select gate CD data to determine the respective pocket implant parameters.
  • an empirical correlation can be established between misalignment and CD. If misalignment CD is zero, even/odd select gate CDs are the same at "xx" nanometer. If the misalignment to odd select gate direction is "yy" nanometer, then the odd select gate CD is "xx + yy" nm, and the even select gate CD is "xx - yy” nm.
  • the pocket implant parameters can be at least one of the doses (which are generally different), implant energy and implant angle.
  • a p-type dopant generally Boron
  • the pocket implant dose has a clear correlation with select gate CD to the flash cell Ir, and the pocket dose can be easily controlled and precisely manipulated within a small range by modern ion implantation equipment.
  • An example pocket implant dose range is from 5 x 10 12 to 1 x 10 14 cm "2
  • an example pocket implant energy is generally from 10 KeV to 50 KeV
  • an example implant angle is from 15 to 45 degrees (measured relative to the semiconductor surface associated with the even or odd select gates being implanted).
  • Step 103 includes performing a bidirectional pocket implant, including a first pocket implant using the first implant parameters into a first pocket region associated with the first select gates, and performing a second pocket implant using the second implant parameters into a second pocket region associated with the second select gates.
  • the first pocket implant is at a first direction to form the first pocket region
  • the second pocket implant is at a second (different) direction to form the second pocket region.
  • the respective pocket implants are angled sufficiently, such as between 15 and 50 degrees, so that the respective pocket implants are physically blocked (or shadowed) by one select gate of the split-gate flash cells (e.g.
  • polysilicon gates such as the even select gates of the split-gate flash cells
  • pocket implanting the other set of select gates such as the odd select gates of the split-gate flash cells.
  • the periphery CMOS is generally masked by photoresist during the process of flash LDD and pocket implants, so that the flash LDD and pocket implants are going only to the channel regions of the split-gate flash cells, and not to the CMOS circuitry.
  • the first implant parameters and second implant parameters are different, with a difference (e.g., a dose difference) that results in different dopant distributions in the first and second pocket regions, which reduces a variation in Ir for the split-gate flash cell between measuring Ir using the first select gate and measuring Ir using the second select gate.
  • Program-state reading current is comparatively very small, so the even/odd select gate Ir difference is generally negligible, while the erase state has higher reading current, so that select gate CD differences may generate relatively significant Ir differences, such as a few ⁇ (see Examples described below).
  • FIG. 2A is a cross sectional depiction of an example feed-forward bidirectional pocket implanted split-gate flash cell 200, according to an example embodiment. Contacts and the metallization stack over the split-gate flash cell 200 are not shown.
  • Split-gate flash cell 200 includes a substrate 205 having a semiconductor surface 205a.
  • a first FG 210 and second FG 220 are on a tunnel gate dielectric layer 211 on the semiconductor surface 205a.
  • a first control gate (CG) 230 is on the first FG 210, and a second CG 240 is on the second FG 220, where a dielectric stack is between the CGs and FGs including a first dielectric layer 234, second dielectric layer 235 and a third dielectric layer 236.
  • CG control gate
  • a common source or common drain 245 is in the semiconductor surface 205a between the first FG 210 and second FG 220, shown having a silicide layer 231 thereon.
  • the silicide layer 231 is also shown on first CG 230, second CG 240, the first select gate 215 (shown as an "even select gate”) and second select gate 225 (shown as an "odd select gate”), which will generally be the case when these gate include polysilicon gates.
  • the first select gate 215 is on a select gate dielectric layer 216 between a first BL source or drain (S/D) 218 in the semiconductor surface 205a and the first FG 210.
  • the second select gate 225 is on the select gate dielectric layer 216 between a second BL S/D 228 in the semiconductor surface 205a and the second FG 220.
  • the select gate dielectric layer 216 can include a high-k dielectric layer, which is defined as a material with a dielectric constant ⁇ of at least 5 (compared to silicon dioxide's dielectric constant ⁇ , which is about 3.9).
  • a spacer includes the third dielectric layer 238 (e.g., silicon nitride) on the second dielectric layer 239 (e.g., silicon oxide) that provides electrical isolation between the silicide layer 231 over the source from the first and second FGs 210, 220 and the first and second BLs 218, 228 from the first and second select gates 215 and 225. Also, a fourth dielectric layer 237 is under the spacer between the CGs/FGs and select gates.
  • the third dielectric layer 238 e.g., silicon nitride
  • the second dielectric layer 239 e.g., silicon oxide
  • the first select gate 215 has a first pocket region 217 that has a first doping distribution, different from a second doping distribution in a second pocket region 227 associated with the second select gate 225, which reduces a variation in Ir for the split-gate flash cell 200 between measuring Ir using the first select gate 215 and measuring Ir using the second select gate 225.
  • a first lightly doped drain (LDD) region 219 is associated with the first select gate 215, and a second LDD region 229 is associated with the second select gate 225.
  • LDD lightly doped drain
  • FIG. 2B is a cross sectional depiction of the feed-forward bidirectional pocket implanted split-gate flash cell 200 of FIG. 2A, with the silicide layer 231 removed with arrows provided to show example angles depicting the respective angled pocket implants that make up the bi-directional pocket implant.
  • the first pocket implant 265 uses first implant parameters and is implanted into a first pocket region associated with the first select gates shown as even select gate 215, and a second pocket implant 270 uses second implant parameters that is implanted into a second pocket region associated with the second select gates shown as odd select gate 225.
  • the different number of arrows shown for first pocket implant 265 and second pocket implant 275 are provided to indicate an implant dose difference between the two implants.
  • the polysilicon gates can act as an implant mask (so photoresist is unnecessary) to block the first pocket implant 265 from entering the second pocket region associated with the second select gates shown as odd select gate 225, and block the second pocket implant 275 from entering the first pocket region associated with the first select gates shown as the even select gate 215.
  • FIG. 3 is a block diagram depiction of a monolithic IC processor chip combination (IC combination) 300 formed in and on a semiconductor surface 205a of a substrate 205 including a non-volatile memory 372, including an array of interconnected disclosed bidirectional pocket implanted split-gate flash cells 200, according to an example embodiment.
  • the connection between the split-gate flash cells 200 can be in parallel to the bit lines, so that each cell can be read/written/erased individually, or connected in series.
  • On-chip flash memory is perhaps the most important memory element in any application, because it is most often the source of all instructions for the central processing unit (CPU or processor) 375. If instructions are not fetched efficiently, then the overall processor performance will likely suffer.
  • the IC combination 300 can include a microprocessor, digital signal processor (DSP) or microcontroller unit (MCU).
  • DSP digital signal processor
  • MCU microcontroller unit
  • the IC combination 300 generally includes other integrated circuit modules, such as a Universal Serial Bus (USB) controller and a transceiver. Also, IC combination 300 is shown including volatile data memory 373, digital I/O (interface) 374, clock (or timer) 376, digital data bus 378 and address bus 379.
  • USB Universal Serial Bus
  • IC combination 300 is shown including volatile data memory 373, digital I/O (interface) 374, clock (or timer) 376, digital data bus 378 and address bus 379.
  • FIG. 4 shows normalized Ir distribution data for flash cells across a wafer.
  • Such data is actual data with normalization for even odd select gate reads in table and plot form at the erased state after applying a 12.5V erase voltage for 45ms.
  • the y-axis in the plots is the normal quantile.
  • the even and odd select gate flash cell average Ir readings are both different by only -5%. This difference is mainly due to the select gate (e.g., polysilicon) CD difference between even and odd select gates.
  • Select gate photo alignment error to the FG or CG on FG stack generates even and odd select gate (e.g., polysilicon gate) CD variation.
  • the alignment error (as described above) can be converted to even and odd select gate CD, or the odd/even select gate CD variation can be directly measured in-line.
  • the subsequent bidirectional pocket implant doses can be adjusted to be different doses. For example, longer select gates (such as odd select gates) can receive a lighter pocket implant dose, while shorter select gates (such as even select gates) can receive a heavier pocket implant dose, such as -5% more.
  • the pocket implant (e.g., dose) differences can be applied to all the wafers in the entire lot, or each wafer can receive a customized pocket implant.
  • select gate even and odd average Ir difference can be decreased and produce a combined split-gate flash cell distribution with a reduced standard deviation.
  • the even select gate CD and odd select gate CD average Ir difference is decreased, and combined split-gate flash cell Ir distribution has lower standard deviation. Tightened erased split-gate flash cell Ir distribution improves flash design and process margins.
  • FIG. 5 is a plot of normalized Ir versus select gate CD, which evidences (for the particular split-gate flash cell design tested) that Ir monotonically increases with increasing select gate CD. Other cell designs may have a reverse trend. If Ir monotonically increases with increasing select gate CD, then the odd select gates can be pocket implanted with a higher dose as compared to the even select gates, such as a 2% to 8% higher dose in one particular example.
  • Disclosed embodiments are useful to form semiconductor die that may be integrated into a variety of assembly flows to form a variety of different devices and related products.
  • the semiconductor die may include various elements therein and/or layers thereon, including barrier layers, dielectric layers, device structures, active elements and passive elements, such as source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines and conductive vias.
  • the semiconductor die can be formed from a variety of processes including bipolar, insulated gate bipolar transistor (IGBT), CMOS, BiCMOS and MEMS.

Abstract

In described examples, a split-gate flash memory cell (cell) includes a semiconductor surface (205a). A first control gate (CG) (230) on a first floating gate (FG) (210) and a second CG (240) on a second FG (220) are each on a tunnel gate dielectric layer (211) on the semiconductor surface. A common source or common drain (245) is between the first and second FGs. A first select gate (215) and a second select gate (225) are on a select gate dielectric layer (216) between a first BL source or drain (S/D) (218) and the first FG and between a second BL S/D (228) and the second FG, respectively. The first select gate (215) has a first pocket region (217) that has a first doping distribution different from a second doping distribution in a second pocket region (227) associated with the second select gate (225), which reduces a variation in read current (Ir) for the cell between measuring Ir using the first select gate and measuring Ir using the second select gate.

Description

FEED-FORWARD BIDIRECTIONAL IMPLANTED SPLIT-GATE FLASH MEMORY CELL
[0001] This relates to split-gate flash memory cells.
BACKGROUND
[0002] Flash memory is an improved version of electrically erasable, programmable read-only memory (EEPROM) which is capable of block-by-block erasing. Flash memory is used in a variety of applications that require programmability with no loss of memory data during power down (non-volatility). Split-gate flash memory cells have been widely used in the semiconductor industry, due to low leakage controlled by a word line (WL) or select gate transistor generally including doped polysilicon, lower program current, higher endurance and improved data retention.
[0003] A particular flash memory cell is a split-gate flash cell that includes 2 side-by-side transistor structures that share a common source (or drain) region in the middle of the flash memory cell. In a split-gate flash cell, the select gate is formed to couple voltage onto the floating gate (FG) and to control a channel region of the transistor. To accomplish these purposes, the select gate is physically formed directly overlying the substrate and overlying (or adjacent) the FG. Split-gate flash cells are widely used in semiconductor industry, due to their advantage (over convention flash cells) of lower leakage controlled by select gate transistor, lower program current, higher endurance and improved data retention.
SUMMARY
[0004] In described examples, a split-gate flash memory cell (cell) includes a semiconductor surface. A first control gate (CG) on a first floating gate (FG) and a second CG on a second FG are each on a tunnel gate dielectric layer on the semiconductor surface. A common source or common drain in the semiconductor surface is between the first and second FGs. A first select gate and a second select gate are on a select gate dielectric layer between a first BL source or drain (S/D) and the first FG and between a second BL S/D and the second FG, respectively. The first select gate has a first pocket region that has a first doping distribution different from a second doping distribution in a second pocket region associated with the second select gate, which reduces a variation in read current (Ir) for the cell between measuring Ir using the first select gate and measuring Ir using the second select gate.
BRIEF DESCRIPTION OF THE DRAWINGS
[0005] FIG. 1 is a flow chart of steps in an example method for fabricating a feed-forward bidirectional pocket implanted split-gate flash cell, according to an example embodiment.
[0006] FIG. 2A is a cross sectional depiction of an example feed-forward bidirectional pocket implanted split-gate flash cell, according to an example embodiment.
[0007] FIG. 2B is a cross sectional depiction of the feed-forward bidirectional pocket implanted split-gate flash cell of FIG. 2A, with the silicide layer removed depicting the respective angled pocket implants with arrows provided to show example angles that make up the bi-directional pocket implant.
[0010] FIG. 3 is a block diagram depiction of a monolithic IC processor chip combination including a non-volatile memory, including an array of interconnected feed-forward bidirectional pocket implanted split-gate flash cells, according to an example embodiment.
[0011] FIG. 4 shows normalized Ir distribution data for cells across a wafer for even odd select gate reads in table and plot form at the erased state using a BL reading voltage of 1.2V and a 12.5 V erase voltage.
[0012] FIG. 5 is a plot of normalized Ir versus select gate CD, which evidences (for the particular split-gate flash cell design tested) that Ir monotonically increases with increasing select gate CD.
DETAILED DESCRIPTION OF EXAMPLE EMB ODEVIENT S
[0013] In this disclosure, some acts or events may occur in different orders and/or concurrently with other acts or events, and some illustrated acts or events are optional.
[0014] With split-gate flash cells being scaled down in size, the select gate length becomes shorter, and thus more susceptible to process variation, such as to gate length variation between the respective select gates on opposite ends of the cell (referred to herein as even/odd select gates, and their length difference an even/odd select gate critical dimension (CD) variation) and implant doping variation for implants that influence the select gate threshold voltage (Vt). Broadening of the select gate Vt distribution within the die and die-to-die across the substrate (e.g., wafer) translates into a larger reading current (Ir) distribution within the die and die-to-die across the substrate, and into reduced flash circuit design margins.
[0015] In a conventional approach to reduce even/odd select gate CD variation in split-gate flash cell integration, the WL photo-alignment margin is tightened, such as by employing improved lithography apparatus. However, such tightening of the select gate photo alignment margin is limited in effectiveness, because the alignment margin cannot be made to be zero, so that the even/odd select flash cell CD difference generally always exists.
[0016] Example embodiments use even/odd select gate CD in-line process control data that is fed-forward for determining the bidirectional pocket implants to compensate for select gate CD alignment margin. Flash orientation is recognized to be restricted to 1 direction, which enables a 2-rotation implant. The implant parameters (dose, energy and/or angle) for the even select gate side and for odd select gate side of the split-gate flash cell can be tuned respectively, based on in-line even/odd select gate CD data, with different implant parameters for each of the 2 rotations used as compensation for the even/odd select gate CD difference. Tightened erase split-gate flash cell Ir is a result of bidirectional pocket implants, which improves flash design and process margins. Disclosed embodiments can generally be applied to all source or drain center-shared split-gate flash cell devices.
[0017] FIG. 1 is a flow chart of steps in an example method 100 for fabricating a feed-forward bidirectional pocket implanted split-gate flash cell, according to an example embodiment. The split-gate flash cell can be based on either n-channel metal-oxide semiconductor (NMOS) or p-channel MOS (PMOS) transistors. Although NMOS transistors may generally be described herein, this information is also useful for PMOS transistors by substituting the n-doped regions with p-doping and vice versa. Disclosed embodiments can be applied to NOR or NAND-based flash memory designs, which allow different pocket implants to be used for respective pocket regions of the split-gate flash cell.
[0018] Step 101 includes providing a substrate having a semiconductor surface including a first CG on a first FG and a second CG on a second FG, each on a tunnel gate dielectric layer on the semiconductor surface. The tunnel gate dielectric layer 211, such as a dielectric oxide layer, may be between about 50 Angstroms and 120 Angstroms in thickness. The tunnel gate dielectric layer is selected to be relatively thin to allow charge transfer to the FGs above (during programming or erasing), but thick enough to provide good charge retention during non-programming and non-erasing operation. Because the FGs are electrically isolated by their tunnel gate dielectric layer from the semiconductor surface, electrons reaching it are trapped until they are removed by another application of electric field (e.g., an applied voltage or ultraviolet (UV) light as in EPROM).
[0019] A common source or common drain is in the semiconductor surface between the first CG/FG and second CG/FG. A first select gate is on a select gate dielectric layer between a first BL source or drain (S/D) in the semiconductor surface and the first FG. A second select gate is on the select gate dielectric layer between a second BL S/D in the semiconductor surface and the second FG. The substrate can include silicon, silicon-germanium or other semiconductor materials including III-V or II- VI materials, and can include a bulk substrate or an epitaxial layer on a bulk substrate. One particular arrangement is a silicon/germanium (SiGe) semiconductor surface on a silicon substrate.
[0020] The first CG, first FG, first select gate, second CG, second FG and second select gate can all include polysilicon gates. However, other possible gate materials include metals for metal-comprising gates for the CGs, FGs and select gates. During an example process integration, the select gates (e.g., polysilicon gates) are formed after the formation of the CG/FG stacks.
[0021] In step 102, based on a CD of the first select gate and a CD of the second select gate, a set of first pocket implant parameters are selected including a first dose, and a second set of pocket implant parameters are selected including a second dose. Also, select gate misalignment data is useful instead of select gate CD data to determine the pocket implant parameters, where the select gate misalignment data can be translated to select gate CD data to determine the respective pocket implant parameters. In wafer fab, an empirical correlation can be established between misalignment and CD. If misalignment CD is zero, even/odd select gate CDs are the same at "xx" nanometer. If the misalignment to odd select gate direction is "yy" nanometer, then the odd select gate CD is "xx + yy" nm, and the even select gate CD is "xx - yy" nm.
[0022] The pocket implant parameters can be at least one of the doses (which are generally different), implant energy and implant angle. A p-type dopant (generally Boron) is used for pockets for MOS devices. The pocket implant dose has a clear correlation with select gate CD to the flash cell Ir, and the pocket dose can be easily controlled and precisely manipulated within a small range by modern ion implantation equipment. An example pocket implant dose range is from 5 x 1012 to 1 x 1014 cm"2, an example pocket implant energy is generally from 10 KeV to 50 KeV, and an example implant angle is from 15 to 45 degrees (measured relative to the semiconductor surface associated with the even or odd select gates being implanted). [0023] Step 103 includes performing a bidirectional pocket implant, including a first pocket implant using the first implant parameters into a first pocket region associated with the first select gates, and performing a second pocket implant using the second implant parameters into a second pocket region associated with the second select gates. The first pocket implant is at a first direction to form the first pocket region, and the second pocket implant is at a second (different) direction to form the second pocket region. The respective pocket implants are angled sufficiently, such as between 15 and 50 degrees, so that the respective pocket implants are physically blocked (or shadowed) by one select gate of the split-gate flash cells (e.g. polysilicon gates), such as the even select gates of the split-gate flash cells, while pocket implanting the other set of select gates, such as the odd select gates of the split-gate flash cells. For a process of fabricating an IC including flash memory and periphery CMOS circuitry, the periphery CMOS is generally masked by photoresist during the process of flash LDD and pocket implants, so that the flash LDD and pocket implants are going only to the channel regions of the split-gate flash cells, and not to the CMOS circuitry.
[0024] The first implant parameters and second implant parameters are different, with a difference (e.g., a dose difference) that results in different dopant distributions in the first and second pocket regions, which reduces a variation in Ir for the split-gate flash cell between measuring Ir using the first select gate and measuring Ir using the second select gate. Program-state reading current is comparatively very small, so the even/odd select gate Ir difference is generally negligible, while the erase state has higher reading current, so that select gate CD differences may generate relatively significant Ir differences, such as a few μΑβ (see Examples described below).
[0025] FIG. 2A is a cross sectional depiction of an example feed-forward bidirectional pocket implanted split-gate flash cell 200, according to an example embodiment. Contacts and the metallization stack over the split-gate flash cell 200 are not shown. Split-gate flash cell 200 includes a substrate 205 having a semiconductor surface 205a. A first FG 210 and second FG 220 are on a tunnel gate dielectric layer 211 on the semiconductor surface 205a. A first control gate (CG) 230 is on the first FG 210, and a second CG 240 is on the second FG 220, where a dielectric stack is between the CGs and FGs including a first dielectric layer 234, second dielectric layer 235 and a third dielectric layer 236.
[0026] A common source or common drain 245 is in the semiconductor surface 205a between the first FG 210 and second FG 220, shown having a silicide layer 231 thereon. The silicide layer 231 is also shown on first CG 230, second CG 240, the first select gate 215 (shown as an "even select gate") and second select gate 225 (shown as an "odd select gate"), which will generally be the case when these gate include polysilicon gates.
[0027] The first select gate 215 is on a select gate dielectric layer 216 between a first BL source or drain (S/D) 218 in the semiconductor surface 205a and the first FG 210. The second select gate 225 is on the select gate dielectric layer 216 between a second BL S/D 228 in the semiconductor surface 205a and the second FG 220. The select gate dielectric layer 216 can include a high-k dielectric layer, which is defined as a material with a dielectric constant κ of at least 5 (compared to silicon dioxide's dielectric constant κ, which is about 3.9). A spacer includes the third dielectric layer 238 (e.g., silicon nitride) on the second dielectric layer 239 (e.g., silicon oxide) that provides electrical isolation between the silicide layer 231 over the source from the first and second FGs 210, 220 and the first and second BLs 218, 228 from the first and second select gates 215 and 225. Also, a fourth dielectric layer 237 is under the spacer between the CGs/FGs and select gates.
[0028] The first select gate 215 has a first pocket region 217 that has a first doping distribution, different from a second doping distribution in a second pocket region 227 associated with the second select gate 225, which reduces a variation in Ir for the split-gate flash cell 200 between measuring Ir using the first select gate 215 and measuring Ir using the second select gate 225. A first lightly doped drain (LDD) region 219 is associated with the first select gate 215, and a second LDD region 229 is associated with the second select gate 225.
[0029] FIG. 2B is a cross sectional depiction of the feed-forward bidirectional pocket implanted split-gate flash cell 200 of FIG. 2A, with the silicide layer 231 removed with arrows provided to show example angles depicting the respective angled pocket implants that make up the bi-directional pocket implant. The first pocket implant 265 uses first implant parameters and is implanted into a first pocket region associated with the first select gates shown as even select gate 215, and a second pocket implant 270 uses second implant parameters that is implanted into a second pocket region associated with the second select gates shown as odd select gate 225. The different number of arrows shown for first pocket implant 265 and second pocket implant 275 are provided to indicate an implant dose difference between the two implants. As described above, the polysilicon gates can act as an implant mask (so photoresist is unnecessary) to block the first pocket implant 265 from entering the second pocket region associated with the second select gates shown as odd select gate 225, and block the second pocket implant 275 from entering the first pocket region associated with the first select gates shown as the even select gate 215.
[0030] FIG. 3 is a block diagram depiction of a monolithic IC processor chip combination (IC combination) 300 formed in and on a semiconductor surface 205a of a substrate 205 including a non-volatile memory 372, including an array of interconnected disclosed bidirectional pocket implanted split-gate flash cells 200, according to an example embodiment. The connection between the split-gate flash cells 200 can be in parallel to the bit lines, so that each cell can be read/written/erased individually, or connected in series. On-chip flash memory is perhaps the most important memory element in any application, because it is most often the source of all instructions for the central processing unit (CPU or processor) 375. If instructions are not fetched efficiently, then the overall processor performance will likely suffer. The IC combination 300 can include a microprocessor, digital signal processor (DSP) or microcontroller unit (MCU).
[0031] Although not shown, the IC combination 300 generally includes other integrated circuit modules, such as a Universal Serial Bus (USB) controller and a transceiver. Also, IC combination 300 is shown including volatile data memory 373, digital I/O (interface) 374, clock (or timer) 376, digital data bus 378 and address bus 379.
EXAMPLES
[0032] Disclosed embodiments are further illustrated by the following non-limiting examples.
[0033] FIG. 4 shows normalized Ir distribution data for flash cells across a wafer. Such data is actual data with normalization for even odd select gate reads in table and plot form at the erased state after applying a 12.5V erase voltage for 45ms. The y-axis in the plots is the normal quantile. The even and odd select gate flash cell average Ir readings are both different by only -5%. This difference is mainly due to the select gate (e.g., polysilicon) CD difference between even and odd select gates.
[0034] Select gate photo alignment error to the FG or CG on FG stack generates even and odd select gate (e.g., polysilicon gate) CD variation. The alignment error (as described above) can be converted to even and odd select gate CD, or the odd/even select gate CD variation can be directly measured in-line. Based on in-line even and odd select gate CD, the subsequent bidirectional pocket implant doses can be adjusted to be different doses. For example, longer select gates (such as odd select gates) can receive a lighter pocket implant dose, while shorter select gates (such as even select gates) can receive a heavier pocket implant dose, such as -5% more.
[0035] The pocket implant (e.g., dose) differences can be applied to all the wafers in the entire lot, or each wafer can receive a customized pocket implant. Thus, select gate even and odd average Ir difference can be decreased and produce a combined split-gate flash cell distribution with a reduced standard deviation. As a result, the even select gate CD and odd select gate CD average Ir difference is decreased, and combined split-gate flash cell Ir distribution has lower standard deviation. Tightened erased split-gate flash cell Ir distribution improves flash design and process margins.
[0036] FIG. 5 is a plot of normalized Ir versus select gate CD, which evidences (for the particular split-gate flash cell design tested) that Ir monotonically increases with increasing select gate CD. Other cell designs may have a reverse trend. If Ir monotonically increases with increasing select gate CD, then the odd select gates can be pocket implanted with a higher dose as compared to the even select gates, such as a 2% to 8% higher dose in one particular example.
[0037] Disclosed embodiments are useful to form semiconductor die that may be integrated into a variety of assembly flows to form a variety of different devices and related products. The semiconductor die may include various elements therein and/or layers thereon, including barrier layers, dielectric layers, device structures, active elements and passive elements, such as source regions, drain regions, bit lines, bases, emitters, collectors, conductive lines and conductive vias. Moreover, the semiconductor die can be formed from a variety of processes including bipolar, insulated gate bipolar transistor (IGBT), CMOS, BiCMOS and MEMS.
[0038] Modifications are possible in the described embodiments, and other embodiments are possible, within the scope of the claims.

Claims

CLAIMS What is claimed is:
1. A split-gate flash memory cell (cell), comprising:
a substrate having a semiconductor surface;
a first control gate (CG) on a first floating gate (FG) and a second CG on a second floating gate (FG), each on a tunnel gate dielectric layer on the semiconductor surface;
a common source or common drain in the semiconductor surface between the first FG and the second FG; and
a first select gate and a second select gate on a select gate dielectric layer between a first BL source or drain (S/D) in the semiconductor surface and the first FG and between a second BL S/D in the semiconductor surface and the second FG, respectively;
wherein the first select gate has a first pocket region that has a first doping distribution different from a second doping distribution in a second pocket region associated with the second select gate, which reduces a variation in read current (Ir) for the cell between measuring the Ir using the first select gate and measuring the Ir using the second select gate.
2. The cell of claim 1, wherein the first select gate, the second select gate, the first CG, and the second CG each include polysilicon gates.
3. The cell of claim 1, wherein the first select gate, the second select gate, the first CG, and the second CG each include metal gates.
4. The cell of claim 1, wherein the first doping distribution and the second doping distribution differ in a total integrated dose by at least 2%.
5. The cell of claim 1, wherein a plurality of the cells are on the semiconductor surface, and are interconnected together and arranged in an array.
6. The cell of claim 1, wherein the cell includes n-channel metal-oxide semiconductor ( MOS) transistors, and wherein the first pocket region and the second pocket region are both boron doped.
7. The cell of claim 1, wherein the substrate includes silicon.
8. A method of fabricating a split-gate flash memory cell (cell), comprising:
providing: a substrate having a semiconductor surface including a first control gate (CG) on a first floating gate (FG) and a second CG on a second FG, each on a tunnel gate dielectric layer on the semiconductor surface; a common source or common drain in the semiconductor surface between the first FG and the second FG; and a first select gate and a second select gate on a select gate dielectric layer between a first BL source or drain (S/D) in the semiconductor surface and the first FG and between a second BL S/D in the semiconductor surface and the second FG, respectively;
based on a critical dimension (CD) of the first select gate and the second select gate, selecting: a set of first pocket implant parameters including a first dose; and a second set of pocket implant parameters including a second dose; and
performing a bidirectional pocket implant including: a first pocket implant using the first implant parameters into a first pocket region associated with the first select gate; and a second pocket implant using the second implant parameters into a second pocket region associated with the second select gate;
wherein the first implant parameters and the second implant parameters are different, with a difference that results in different dopant distributions in the first and second pocket regions, which reduces a variation in read current (Ir) for the cell between measuring the Ir using the first select gate and measuring the Ir using the second select gate.
9. The method of claim 8, wherein the first dose and the second dose are different by at least 2%.
10. The method of claim 8, further comprising converting misalignment data for the first select gate to the CD of the first select gate and misalignment data for the second select gate to the CD of the second select gate.
11. The method of claim 8, wherein an implant angle for the first pocket implant and the second pocket implant are both between 15 to 45 degrees.
12. The method of claim 8, wherein the first select gate, the second select gate, the first CG, and the second CG each include polysilicon gates.
13. The method of claim 12, further comprising forming a silicide layer on the first CG, the second CG, the first select gate, the second select gate, and the common source or common drain.
14. The method of claim 8, wherein the cell includes n-channel metal-oxide semiconductor ( MOS) transistors, and wherein the first pocket implant and the second pocket implant both include boron implantation.
15. The method of claim 8, wherein the difference in the first implant parameters and the second implant parameters is a dose difference with a first implant dose for the first implant parameters and a second implant dose for the second implant parameters, further comprising: customizing the dose difference for each of a plurality of wafers in a lot having die including the cell.
16. An integrated circuit (IC) combination, comprising:
a substrate having a semiconductor surface;
a processor formed on the semiconductor surface;
an array of interconnected split-gate flash memory cells (cells) formed on the semiconductor surface, each cell including: a first control gate (CG) on a first floating gate (FG) and a second CG on a second floating gate (FG), each on a tunnel gate dielectric layer on the semiconductor surface; a common source or common drain in the semiconductor surface between the first FG and the second FG; and a first select gate and a second select gate on a select gate dielectric layer between a first BL source or drain (S/D) in the semiconductor surface and the first FG and between a second BL S/D in the semiconductor surface and the second FG, respectively; wherein the first select gate has a first pocket region that has a first doping distribution different from a second doping distribution in a second pocket region associated with the second select gate, which reduces a variation in read current (Ir) for the cell between measuring the Ir using the first select gate and measuring the Ir using the second select gate; and a data bus for coupling the array of interconnected cells to the processor.
17. The IC combination of claim 16, wherein the first select gate, the second select gate, the first CG and the second CG each include polysilicon gates.
18. The IC combination of claim 16, wherein the first doping distribution and the second doping distribution differ in a total integrated dose by at least 2%.
19. The IC combination of claim 16, further comprising a microcontroller unit (MCU).
20. The IC combination of claim 16, wherein the cell includes n-channel metal-oxide semiconductor (NMOS) transistors, and wherein the first pocket region and the second pocket region are both boron doped.
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JP2018511179A (en) 2018-04-19
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CN107251149A (en) 2017-10-13
US9461060B1 (en) 2016-10-04
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US9343468B1 (en) 2016-05-17
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