WO2016153184A1

WO2016153184A1 - Film touch sensor and method for manufacturing same

Info

Publication number: WO2016153184A1
Application number: PCT/KR2016/001998
Authority: WO
Inventors: 최봉진; 박민혁; 차진규
Original assignee: 동우화인켐 주식회사
Priority date: 2015-03-20
Filing date: 2016-02-29
Publication date: 2016-09-29
Also published as: KR20160112600A; TW201635119A

Abstract

The present invention relates to a film touch sensor and a method for manufacturing the same and, more particularly, to a film touch sensor and a method for manufacturing the same, the film touch sensor comprising: a separation layer; an inorganic protective layer having a modulus of elasticity of 10GPa to 15GPa and placed on the separation layer; and an electrode pattern layer placed on the inorganic protective layer. Therefore, the film touch sensor has excellent thermal resistance and can thus suppress thermal damage such as wrinkles and cracks which may be caused during a high temperature deposition and annealing process, has excellent flexural characteristics and thus reduces the possibility of causing cracks during a peeling process, and can be applied as a flexible touch sensor and the like.

Description

Film touch sensor and manufacturing method thereof

The present invention relates to a film touch sensor and a manufacturing method thereof.

As the touch input method has been spotlighted as the next generation input method, attempts have been made to introduce the touch input method to a variety of electronic devices. Therefore, research and development on touch sensors that can be applied to various environments and enable accurate touch recognition are also actively conducted. have.

For example, in the case of an electronic device having a touch type display, an ultra-thin flexible display that achieves ultralight weight, low power, and improved portability has been attracting attention as a next generation display, and development of a touch sensor applicable to such a display has been required.

A flexible display means a display manufactured on a flexible substrate that can bend, bend, or roll without loss of properties, and technology development is in progress in the form of a flexible LCD, a flexible OLED, and an electronic paper.

In order to apply the touch input method to such a flexible display, a touch sensor having excellent bending and resilience and excellent flexibility and elasticity is required.

Regarding the film touch sensor for manufacturing such a flexible display, a wiring board including wiring embedded in a transparent resin substrate has been proposed.

A wiring forming step of forming a metal wiring on the carrier substrate, a lamination step of applying and drying a transparent resin solution to cover the metal wiring to form a transparent resin substrate, and a peeling process of peeling the transparent resin substrate from the carrier substrate. It is.

In this manufacturing method, in order to perform the peeling process smoothly, an inorganic peeling material such as an organic peeling material such as a silicone resin or a fluororesin, a diamond like carbon thin film (DLC) thin film or a zirconium oxide thin film is applied to the surface of the substrate. A method of forming in advance is used. However, in the case of using the inorganic release material, when peeling the substrate and the metal wiring from the carrier substrate, there is a problem that the peeling of the wiring and the substrate does not proceed smoothly and some of the metal wiring and the substrate remain on the substrate surface. There is a problem that the organic material used adheres to the surface of the wiring and the substrate.

In order to solve this problem, the method proposed in Korean Patent No. 1191865 includes a sacrificial layer, a metal wiring, and a polymer material which can be removed by light or a solvent in the manufacturing of a flexible substrate having a metal wiring embedded therein. After the (flexible substrate) is formed on the carrier substrate, the metal wiring and the polymer material (flexible substrate) are separated from the carrier substrate by removing the sacrificial layer using light or a solvent.

However, this method is difficult to remove the sacrificial layer in a large size, the metal wiring is directly exposed to a chemical solution such as a solvent, there is a problem that can not use a variety of film substrates because the high temperature process is impossible.

[Preceding technical literature]

[Patent Documents]

Korean Patent No. 1191865

An object of this invention is to provide the film touch sensor provided with the protective layer which coat | covers an electrode pattern layer.

An object of the present invention is to provide a film touch sensor having a protective layer excellent in heat resistance and capable of suppressing thermal damage that may occur during high temperature deposition and annealing processes.

An object of the present invention is to provide a film touch sensor having excellent bending characteristics.

An object of the present invention is to provide a method for manufacturing a film touch sensor having excellent heat resistance and bending characteristics.

1. Separation layer;

An inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa located on the separation layer; And

And an electrode pattern layer on the inorganic protective layer.

2. In the above 1, wherein the inorganic protective layer is an inorganic oxide or inorganic nitride layer, film touch sensor.

3. In the above 1, wherein the inorganic protective layer is a silicon oxide layer, film touch sensor.

4. In the above 1, wherein the inorganic protective layer is less than 200nm in thickness, film touch sensor.

5. In the above 1, wherein the electrode pattern layer has a thickness of 30 to 150nm, film touch sensor.

6. In the above 1, wherein the electrode pattern layer is manufactured through a high temperature process of 150 ℃ to 250 ℃, the film touch sensor.

7. In the above 1, further comprising a base film attached through the adhesive layer on the electrode pattern layer, the film touch sensor.

8. In the above 7, the adhesive layer has an elastic modulus of 107Pa to 109Pa, the peel force is 10N / 25mm or more, film touch sensor.

9. according to the above 7, further comprising a second protective layer positioned between the electrode pattern layer and the adhesive layer, the touch sensor film.

10. The image display device including the film touch sensor of any one of the above 1 to 9.

11. forming a separation layer on the carrier substrate;

Forming an inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer;

Forming an electrode pattern layer on the inorganic protective layer; And

Peeling the separation layer from the carrier substrate.

12. The method according to 11 above, wherein the inorganic protective layer is a silicon oxide layer having a thickness of less than 200 nm.

13. In the above 11, wherein the inorganic protective layer is formed through a curing process for 10 to 30 minutes at 160 to 240 ℃ after coating, the method of manufacturing a touch sensor film.

14. In the above 11, wherein the electrode pattern layer is formed through a high temperature process of 150 ℃ to 250 ℃, manufacturing method of the film touch sensor.

15. In the above 11, forming an adhesive layer on the electrode pattern layer; And attaching a base film on the adhesive layer.

16. forming a separation layer on the carrier substrate;

Forming an inorganic protective layer having a thickness of less than 200 nm and an elastic modulus of 10 Gpa to 15 Gpa on the separation layer; And

And forming an electrode pattern layer on the inorganic protective layer through a high temperature process between 150 ° C. and 250 ° C .;

The film touch sensor of the present invention is excellent in heat resistance, and can suppress thermal damage such as wrinkles, cracks, and color changes that may occur during high temperature deposition and annealing processes. Accordingly, a high temperature deposition and annealing process may be performed to implement an electrode pattern layer having a lower resistance.

The film touch sensor of the present invention is excellent in flexural characteristics, low probability of cracking during peeling, and may be applied as a flexible touch sensor.

1 to 3 are schematic cross-sectional views of a film touch sensor according to an embodiment of the present invention.

4 and 5 is a schematic process diagram of a method of manufacturing a film touch sensor according to an embodiment of the present invention.

The present invention is a separation layer; An inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa located on the separation layer; And by including an electrode pattern layer located on the inorganic protective layer, it is excellent in heat resistance, it is possible to suppress thermal damage such as wrinkles, cracks, etc. that may occur during the high temperature deposition and annealing process, and excellent bending characteristics to crack during peeling The present invention relates to a film touch sensor and a method for manufacturing the same, which have a low possibility of occurrence and can be applied to a flexible touch sensor.

The film touch sensor of the present invention includes a separation layer, an inorganic protective layer and an electrode pattern layer.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic cross-sectional view of a film touch sensor according to an embodiment of the present invention.

In the touch sensor of the present invention, a manufacturing process is performed on the carrier substrate 10, and the manufactured laminate is manufactured by separating the carrier substrate 10, and the separation layer 20 is separated from the carrier substrate 10. Layer is formed.

The separation layer 20 is a layer for protecting the electrode pattern layer 40 by covering the electrode pattern layer 40 without being removed after separation from the carrier substrate 10.

The separation layer 20 may be a polymer organic membrane, for example, a polyimide polymer, a polyvinyl alcohol polymer, a polyamic acid polymer, a polyamide polymer , Polyethylene polymer, polystylene polymer, polynorbornene polymer, phenylmaleimide copolymer polymer, polyazobenzene polymer, polyphenylene phthalamide (polyphenylenephthalamide) polymer, polyester polymer, polymethyl methacrylate polymer, polyarylate polymer, cinnamate polymer, coumarin polymer, It may be made of a polymer such as phthalimidine-based polymer, chalcone-based polymer, aromatic acetylene-based polymer, but That's not one. These can be used individually or in mixture of 2 or more types.

The separation layer 20 is easily peeled from the carrier substrate 10, and the peeling force on the carrier substrate 10 of the material is 1 N / 25 mm so that the separation layer 20 is not peeled off from the protective layer 30 to be described later. It is preferable to be manufactured from the following materials.

10-1000 nm is preferable and, as for the thickness of the separation layer 20, it is more preferable that it is 50-500 nm. If the thickness of the separation layer 20 is less than 10 nm, the uniformity during application of the separation layer 20 may be inferior, or the electrode pattern may be unevenly formed, or the peeling force may be locally increased to cause tearing or separation from the carrier substrate 10. After that, there is a problem that the curl of the film touch sensor is not controlled. And when the thickness exceeds 1000nm, there is a problem that the peeling force is no longer lowered, there is a problem that the flexibility of the film is lowered.

The protective layer 30 is disposed on the separation layer 20 and covers the electrode pattern layer 40 similarly to the separation layer 20 to prevent contamination of the electrode pattern layer 40 and separation from the carrier substrate 10. It serves to prevent breakage of the electrode pattern layer 40.

In the case of a normal organic protective layer, deformation of wrinkles or the like may occur due to high heat applied during manufacturing of the electrode pattern layer 40, which will be described later, or a crack of the electrode pattern layer 40 may be caused by thermal stress. And high elasticity is difficult, and there exists a problem of lacking a bending characteristic.

However, the inorganic protective layer 30 according to the present invention is made of an inorganic material, it is excellent in heat resistance can reduce the occurrence of cracks due to thermal deformation and thermal stress. Accordingly, the electrode pattern layer 40 having a lower resistance may be implemented by performing a high temperature deposition and annealing process. Moreover, it is excellent in chemical resistance and suppresses swelling, peeling, etc. of the separation layer 20. FIG.

The inorganic material constituting the inorganic protective layer 30 is not particularly limited as long as it is an inorganic material, and may be, for example, an inorganic oxide or an inorganic nitride. Examples of the inorganic oxide include silicon oxide, alumina, titanium oxide, and the like, and examples of the inorganic nitride include silicon nitride and titanium nitride. It may be preferably silicon oxide in terms of achieving high transmittance.

The inorganic protective layer 30 according to the present invention may have an elastic modulus of 10 GPa to 15 GPa. If the elastic modulus is less than 10 GPa or greater than 15 GPa, cracks may occur in the inorganic protective layer 30, the electrode pattern layer 40, or the touch sensor when the manufactured film touch sensor is peeled from the carrier substrate 10.

The method for allowing the inorganic protective layer 30 to have the elastic modulus range is not particularly limited, and can be adjusted by adjusting the thickness and curing density of the inorganic protective layer 30, for example. Specific examples of adjusting the curing density may be cured for 10 to 30 minutes at 160 ° C to 240 ° C, preferably at 180 to 220 ° C for 15 minutes to 25 minutes after coating the inorganic protective layer 30. It is not limited to this.

The thickness of the inorganic protective layer 30 is not particularly limited as long as it is a range showing the modulus of elasticity, and may be, for example, less than 200 nm. When the thickness is 200 nm or more, it may be difficult to satisfy the elastic modulus range, and when the manufactured film touch sensor is peeled from the carrier substrate 10, a crack may occur in the protective layer, the electrode pattern layer 40, or the touch sensor. Within this range, for example, it may be 10nm to 190nm, 10nm to 195nm, 20nm to 190nm, 30nm to 150nm and the like.

The electrode pattern layer 40 is positioned on the inorganic protective layer 30.

The electrode pattern layer 40 may include not only an electrode sensing a touch but also a wiring pattern connected to the electrode.

The electrode pattern layer 40 may be used without limitation as long as it is a conductive material. For example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), aluminum zinc oxide (AZO), Gallium Zinc Oxide (GZO), Florin Tin Oxide (FTO), Indium Tin Oxide-Silver-Indium Tin Oxide (ITO-Ag-ITO), Indium Zinc Oxide-Silver-Indium Zinc Oxide (IZO-Ag-IZO), Indium Zinc Metal oxides selected from the group consisting of tin oxide-silver-indium zinc tin oxide (IZTO-Ag-IZTO) and aluminum zinc oxide-silver-aluminum zinc oxide (AZO-Ag-AZO); Metals selected from the group consisting of gold (Au), silver (Ag), copper (Cu), molybdenum (Mo), and APC (Ag, Pd, Cu alloys); Nanowires of metals selected from the group consisting of gold, silver, copper and lead; Carbon-based materials selected from the group consisting of carbon nanotubes (CNT) and graphene; And conductive polymer materials selected from the group consisting of poly (3,4-ethylenedioxythiophene) (PEDOT) and polyaniline (PANI). These can be used individually or in mixture of 2 or more types.

In some cases, the electrode pattern layer 40 may be formed of two or more conductive layers in the form of a first electrode layer and a second electrode layer in order to reduce electrical resistance.

In one embodiment, the electrode pattern layer 40 may be formed of one layer of ITO, silver nanowires (AgNW), or a metal mesh, and in the case of forming two or more layers, the first electrode layer may be formed of a transparent metal oxide such as ITO. In order to further reduce the electrical resistance, the second electrode layer may be formed using a metal, AgNW, or the like on the ITO electrode layer.

In order to improve the electrical conductivity of the electrode pattern layer 40, the electrode pattern layer 40 made of a metal or a metal oxide may be formed to include at least one or more layers. In more detail, the electrode pattern layer 40 forms a transparent conductive layer of a metal or a metal oxide on the separation layer 20 or the protective layer, and then further laminates the transparent conductive layer to form an electrode pattern or a separation layer ( 20) Alternatively, an electrode pattern may be formed by stacking one or more transparent conductive layers on the protective layer and then further forming a transparent conductive layer with a metal or a metal oxide. Specific examples of the laminated structure of the electrode pattern is as follows. A structure in which a metal or metal oxide pattern layer is further formed between the separation layer 20 and the electrode pattern layer 40, a structure in which a metal or metal oxide pattern layer is further formed between the electrode pattern layer 40 and the insulating layer, and protection A metal or metal oxide pattern layer may be further formed between the layer and the electrode pattern layer 40, and may further include at least one electrode pattern layer 40 made of a transparent conductive material.

Specific examples of the laminated structure of the applicable electrode pattern layer 40 are as follows.

A structure for laminating metal oxides and laminating silver nanowires thereon, a structure for laminating metal oxides and laminating metals thereon, a structure for laminating metal oxides and laminating metal mesh electrodes thereon, and silver nanowires A structure for laminating and stacking metal oxides on top of it, a structure for laminating metals and stacking metal oxide on top of it, a structure for laminating metal mesh electrodes and laminating metal oxide on top of it, a lamination of metal oxide on top of it Stacking silver nanowires and further stacking a metal layer thereon; stacking silver nanowires, stacking a metal oxide thereon, and further stacking a metal layer thereon; and the electrode stacking structure is a touch sensor. It can be changed in consideration of the signal processing, the resistance and is not limited to the above-described laminated structure.

In the electrode pattern layer 40, an electrical insulation layer may be formed between the first electrode pattern layer 40 and the second electrode pattern layer 40, and the second conductive layer may be formed by patterning the electrical insulation layer to form a contact hole. May be formed to be a bridge electrode.

In addition, the structure of the electrode pattern layer 40 will be described below in terms of the touch sensor method.

The pattern structure of the electrode pattern layer 40 is preferably an electrode pattern structure used in the capacitive method, a mutual capacitance method (self-capacitance) or a self-capacitance method (self-capacitance) may be applied.

In the case of mutual capacitance, the grid electrode structure may have a horizontal axis and a vertical axis. A bridge electrode may be included at an intersection point of the electrodes of the horizontal axis and the vertical axis, or the horizontal electrode pattern layer 40 and the vertical axis electrode pattern layer 40 may be formed to be electrically spaced apart from each other.

In the case of self-capacitance, the electrode layer structure may be a method of reading capacitance change by using one electrode at each point.

The electrode pattern layer 40 is preferably formed by including a high temperature heat treatment process to implement a low resistance. The high temperature may be, for example, 150 ℃ to 250 ℃. Specifically, it may be formed by a deposition process of 150 ° C to 250 ° C, or may be formed by a room temperature deposition and a heat treatment process of 150 ° C to 250 ° C, but is not limited thereto.

The film touch sensor of the present invention may further include a base film attached to the electrode pattern layer 40 through the adhesive layer 50. 2 is a schematic cross-sectional view of a film touch sensor according to such an embodiment.

The adhesive layer 50 means an adhesive layer or an adhesive layer.

As the base film 60, a transparent film made of a material widely used in the art may be used without limitation, and for example, a cellulose ester (eg, cellulose triacetate, cellulose propionate, cellulose butyrate, cellulose acetate Propionate, and nitrocellulose), polyimide, polycarbonate, polyester (e.g. polyethylene terephthalate, polyethylene naphthalate, poly-1,4-cyclohexanedimethylene terephthalate, polyethylene 1,2-diphenoxyethane -4,4'-dicarboxylate and polybutylene terephthalate, polystyrene (e.g. syndiotactic polystyrene), polyolefins (e.g. polypropylene, polyethylene and polymethylpentene), polysulfones, polyether sulfones , Polyarylate, polyether-imide, polymethylmethacrylate, polyether ketone, It may be a film made of a single or a mixture thereof selected from the group consisting of polyvinyl alcohol and polyvinyl chloride.

In addition, the transparent film may be an isotropic film or a retardation film.

In the case of an isotropic film, in-plane retardation (Ro, Ro = [(nx-ny) xd], nx, ny are principal refractive index in the film plane, nz is refractive index in the film thickness direction, d is film thickness) is 40 nm or less, and 15 nm The thickness direction retardation (Rth, Rth = [(nx + ny) / 2-nz] xd) is preferably -90 nm to +75 nm, preferably -80 nm to +60 nm, particularly -70 nm to +45 nm. desirable.

Retardation film is a film produced by the method of uniaxial stretching, biaxial stretching, polymer coating, liquid crystal coating of a polymer film, and is generally used for improving and adjusting optical properties such as viewing angle compensation, color reduction, light leakage improvement, and color control of a display. do.

In addition, a polarizing plate can also be used for the base film 60.

The polarizing plate may be a polarizer protective film is attached to one side or both sides of the polyvinyl alcohol polarizer.

In addition, a protective film can also be used as the base film 60.

The protective film may be a film including an adhesive layer on at least one surface of a film made of a polymer resin or a film having a self-adhesive property such as polypropylene, and may be used for protecting the touch sensor surface and improving process resolution.

The light transmittance of the base film 60 is preferably 85% or more, more preferably 90% or more. Moreover, it is preferable that the total haze value measured according to JISK7136 is 10% or less, and, as for the said base film 60, it is more preferable that it is 7% or less.

Although the thickness of the said base film 60 is not restrict | limited, Preferably it is 30-150 micrometers, More preferably, it is 70-120 micrometers.

As the pressure-sensitive adhesive or adhesive, any thermosetting or photocurable pressure-sensitive adhesive or adhesive known in the art may be used without limitation. For example, thermosetting or photocurable adhesives or adhesives, such as polyester type, polyether type, urethane type, epoxy type, silicone type, and acryl type, can be used.

It is preferable that the adhesive bond layer 50 has a high elasticity of 107 Pa or more in terms of suppressing crack generation during the peeling process of the film touch sensor. The elastic modulus may be preferably 107 Pa to 109 Pa in view of suppressing crack generation and at the same time showing excellent adhesion.

Moreover, it is preferable that the adhesive force layer 50 has peeling force of 10 N / 25mm or more from a viewpoint of suppressing a crack generation at the peeling process of a film touch sensor.

The film touch sensor of the present invention may further include a second protective layer 70 positioned between the electrode pattern layer 40 and the adhesive layer 50. 3 is a schematic cross-sectional view of a film touch sensor according to such an embodiment.

The second protective layer 70 covers the electrode pattern layer 40 to prevent corrosion of the electrode pattern layer 40, and prevents damage to the electrode pattern layer 40 by static electricity.

The second protective layer 70 may be a layer formed of the same material as the organic insulating layer or the inorganic protective layer 30.

Moreover, an object of this invention is to provide the image display apparatus containing the said film touch sensor.

The film touch sensor of the present invention can be applied to various image display devices such as electroluminescent display devices, plasma display devices, field emission display devices, as well as ordinary liquid crystal display devices.

In addition, the film touch sensor of the present invention has excellent bending characteristics, and the image display device may be a flexible image display device.

The present invention also provides a method of manufacturing a film touch sensor.

4 and 5 is a schematic process diagram of a method of manufacturing a film touch sensor according to an embodiment of the present invention. This is one embodiment in the case of including the step of attaching the base film to be described later, the present invention is not limited thereto.

Hereinafter, with reference to the drawings will be described in detail.

First, as shown in FIG. 4A, the separation layer 20 is formed on the carrier substrate 10.

The carrier substrate 10 may be used without particular limitation as long as it provides a suitable strength so that it can be fixed without being easily bent or twisted during the process and has little effect on heat or chemical treatment. For example, glass, quartz, silicon wafers, sus etc. may be used, preferably glass may be used.

The separation layer 20 may be formed of the aforementioned polymer material.

In the case of the electrode pattern layer 40 formed of a metal material, it may be difficult to peel from the carrier substrate 10, but in the case of the separation layer 20, the separation layer 20 is formed because the separation layer 20 is well separated from the carrier substrate 10. In this case, since the impact applied to the touch sensor during peeling from the carrier substrate 10 is small, problems such as damage to the electrode pattern layer 40 can be reduced.

Preferably, the separation layer 20 may have a peel force of about 1 N / 25 mm or less on the carrier substrate 10 in terms of minimizing physical damage applied to the peeling.

The formation method of the separation layer 20 is not specifically limited, Slit coating method, knife coating method, spin coating method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method To methods known in the art such as dip coating, spray coating, screen printing, gravure printing, flexographic printing, offset printing, inkjet coating, dispenser printing, nozzle coating, capillary coating, etc. You can.

After forming the separation layer 20 by the method described above, an additional curing process may be further performed.

The hardening method of the separation layer 20 is not specifically limited, either photocuring or thermosetting, or both methods can be used. The order in which both photocuring and thermosetting are performed is not specifically limited.

Next, as shown in FIG. 4B, an inorganic protective layer 30 having an elastic modulus of 10 GPa to 15 GPa is formed on the separation layer 20.

The inorganic protective layer 30 may be formed of the above-described materials, and the method of forming the inorganic protective layer 30 is not particularly limited, but may be a physical vapor deposition method, a chemical vapor deposition method, a plasma deposition method, a plasma polymerization method, a thermal vapor deposition method, a thermal oxidation method, an anodization method, a cluster ion beam deposition method, It may be by a method known in the art such as screen printing, gravure printing, flexographic printing, offset printing, inkjet coating, dispenser printing.

The inorganic protective layer 30 may be formed to have the aforementioned thickness range.

The inorganic protective layer 30 may be manufactured by a high temperature curing process after coating by the above-described method. For example, curing may be performed at 160 ° C. to 240 ° C. for 10 to 30 minutes, preferably at 180 to 220 ° C. for 15 minutes to 25 minutes, but is not limited thereto.

Next, as shown in FIG. 4C, an electrode pattern layer 40 is formed on the inorganic protective layer 30.

The electrode pattern layer 40 is made of the material described above, and can be formed by the same method as the method for forming the inorganic protective layer 30.

In the aspect that the electrode pattern layer 40 has a low resistance, preferably the electrode pattern layer 40 may be formed through a high temperature process of 150 ℃ to 250 ℃. For example, it may be formed by a deposition process of 150 ° C to 250 ° C, or may be formed by room temperature deposition and a heat treatment process of 150 ° C to 250 ° C, but is not limited thereto.

Next, as shown in FIG. 4E, the separation layer 20 is peeled from the carrier substrate 10.

Through the above-described process, a laminate obtained by sequentially separating the separation layer 20, the inorganic protective layer 30, and the electrode pattern layer 40 on the carrier substrate 10 may be obtained, and the separation layer 20 may be transferred to the carrier. It peels off from the board | substrate 10, and the said laminated body can be used as a film touch sensor.

The manufacturing method of the film touch sensor of the present invention may further include attaching a base film on the electrode pattern layer 40, as shown in FIG. Specifically, forming an adhesive layer 50 on the electrode pattern layer 40; And attaching a base film on the adhesive layer 50.

In this case, the peeling process may be performed before or after the attachment of the base film. 5 illustrates a case where a peeling process is performed after the adhesion of the base film.

The adhesive layer 50 may be formed by the above-described pressure-sensitive adhesive or adhesive, and may be formed on the electrode pattern layer 40 by a coating method exemplified as the separation layer 20 forming method, and may be dried or cured. have.

It is preferable that the adhesive layer 50 has the above-mentioned elastic modulus range and peeling force range in view of crack generation suppression of the film touch sensor during the peeling process.

The method of manufacturing a film touch sensor according to the present invention may further include forming a second protective layer 70 on the electrode pattern layer 40 before attaching the base film.

The second protective layer 70 may be formed of the material described above and may be formed in the same manner as the separation layer 20 is formed.

The second protective layer 70 may be formed before or after the exfoliation.

Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims, which are within the scope and spirit of the present invention. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.

Example 1

Sodium lime glass having a thickness of 700 µm was used as a carrier substrate, and 50 parts by weight of melamine-based resin and 50 parts by weight of cinnamate-based resin were propylene glycol monomethyl ether on the carrier substrate. The separation layer composition diluted in acetate (Propylene glycol monomethyl ether acetate, PGMEA) was applied by spin coating to a thickness of 300nm, and dried for 30 minutes at 150 ℃ to form a separation layer.

Later, SiOx Precursor (hexamethyldisilazane) was coated over the entire area through an atmospheric pressure plasma apparatus. At this time, the nozzle gap was maintained at 50mm and coated at a speed of 500mm / min, and cured at 200 ° C. for 20 minutes to form an inorganic protective layer having a thickness of 60 nm. Thereafter, ITO was deposited to a thickness of 35 nm at 25 ° C., and the ITO layer was annealed at 230 ° C. for 30 minutes to form an electrode pattern layer.

On the electrode pattern layer, a second protective layer composition (40 parts by weight of a polyfunctional acrylic monomer and 60 parts by weight of an epoxy resin is mixed and 30 parts by weight of diethylene glycol methylethyl ether (MEDG), PGMEA and 3-methoxybutanol, respectively) , 40 parts by weight, and 30 parts by weight of a solvent, the solid content of which is to have a proportion of 20 parts by weight) was applied by spin coating method with a thickness of 2㎛, UV curing at 200mJ / cm 2 to perform photocuring, 200 Dry curing was performed at 30 ° C. for 30 minutes to form a second protective layer.

Subsequently, on the second protective layer, 50 parts by weight of monomer CEL2021P ((3,4-Epoxycyclohenaxane) methyl 3,4-Epoxy cyclohexylcarboxylate and polymerization agent SP500, leveling agent KRM230, and NPGDGE (Neo-Pentyl Glycol DiGlycidyl Ether) 20 Parts by weight, 10 parts by weight of 1,6-hexanediol diacrylate, 5 parts by weight of trimethylol propane triacrylate, 10 parts by weight of adhesion tackifier KRM0273, 60 parts by weight of 4-HBVE as a dilution monomer It was apply | coated with the eyedropper between a micrometer TAC film and a 2nd protective layer, and it crimped | bonded by the roll laminator so that the thickness of an adhesion layer might be set to 2 micrometers.

10 mW / cm 2 intensity UV light was irradiated to the adhesive layer for 100 seconds to closely adhere, and the resultant was allowed to stand at room temperature after drying for 10 minutes in an 80 ° C. oven.

Example 2

A film touch sensor was manufactured in the same manner as in Example 1, except that the thickness of the inorganic protective layer was 120 nm.

Example 3

A film touch sensor was manufactured in the same manner as in Example 1, except that the thickness of the inorganic protective layer was 200 nm.

Example 4

A film touch sensor was manufactured in the same manner as in Example 1, except that the thickness of the inorganic protective layer was 190 nm.

Example 5

A film touch sensor was manufactured in the same manner as in Example 1, except that the inorganic protective layer was formed of TiO 2.

Comparative Example 1

Instead of forming an inorganic protective layer, a first protective layer composition (40 parts by weight of a polyfunctional acrylic monomer and 60 parts by weight of an epoxy resin is mixed on the electrode pattern layer, and diethylene glycol methylethyl ether (MEDG), PGMEA and 3- Methoxybutanol was prepared in a solvent mixed with 30 parts by weight, 40 parts by weight and 30 parts by weight, respectively, with a solid coating having a proportion of 20 parts by weight) by spin coating at a thickness of 2 μm, and UV irradiation at 200 mJ / cm 2. Photocuring was carried out and dried and cured at 200 ° C. for 30 minutes to form a first protective layer,

A film touch sensor was manufactured in the same manner as in Example 1, except that annealing of the ITO layer was not performed.

Comparative Example 2

A film touch sensor was manufactured in the same manner as in Comparative Example 1, except that the ITO layer was annealed at 230 ° C. for 30 minutes.

Comparative Example 3

An inorganic protective layer was formed by coating SiO 2, curing at 150 ° C. for 20 minutes, and setting the ITO annealing condition to 80 ° C. for 10 minutes to prepare a film touch sensor in the same manner as in Example 1.

Comparative Example 4

The inorganic protective layer was formed by coating SiOx, curing at 250 ° C. for 20 minutes, and setting the film touch sensor in the same manner as in Example 1 except that the ITO annealing conditions were set at 300 ° C. and 60 minutes.

Experimental Example

(1) elastic modulus measurement

The elastic modulus of the inorganic protective layer (first protective layer) of the film touch sensor of the Example and the comparative example was measured with the nanoindenter. Each substrate was set in a nanoindenter and pressed to a force of 2000 mN to measure the elastic modulus of the exposed inorganic protective layer (first protective layer) portion.

(2) Sheet resistance measurement

The sheet resistance of the electrode pattern layer of the film touch sensor of the Example and the comparative example was measured by the 4-point probe.

(3) transmittance measurement

The total light transmittance of the film touch sensors of Examples and Comparative Examples was measured using a haze meter (HM-150, Murakamisa), and the measurement results are described in Table 2 below by calculating the transmittance with respect to the glass substrate.

(4) color evaluation

The color b value of the film touch sensor of an Example and a comparative example was measured with the N & K analyzer (N & K Technology Inc.).

(5) Observation of the protective layer wrinkles

In the film touch sensors of Examples and Comparative Examples, the presence of wrinkles of the inorganic protective layer or the first protective layer was observed under a microscope to determine whether wrinkles occurred.

(6) Evaluation of peeling crack occurrence

The film touch sensors manufactured in Examples and Comparative Examples were peeled off from the carrier substrate, and cracks were observed in the peeled film touch sensors to evaluate whether cracks were generated according to the following criteria.

○: no cracks on the front

Δ: cracks occur in some areas

X: Cracks occur across the front

Table 1

Referring to Table 1, the film touch sensor of the embodiment having a protective layer of the elastic modulus range of the present invention has a small color change even after ITO annealing, it can be seen that the wrinkles do not occur, the crack generation is minimized.

However, in the film touch sensor of the comparative example, wrinkles occurred in the protective layer or peeled cracks occurred by ITO annealing.

[Description of the code]

10 carrier substrate 20 separation layer

30: inorganic protective layer 40: electrode pattern layer

50: adhesive layer 60: base film

70: second protective layer

Claims

Separation layer;

An inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa located on the separation layer; And

And an electrode pattern layer on the inorganic protective layer.
The film touch sensor of claim 1, wherein the inorganic protective layer is an inorganic oxide or inorganic nitride layer.
The film touch sensor of claim 1, wherein the inorganic protective layer is a silicon oxide layer.
The film touch sensor of claim 1, wherein the inorganic protective layer has a thickness of less than 200 nm.
The film touch sensor of claim 1, wherein the electrode pattern layer has a thickness of 30 to 150 nm.
The method of claim 1, wherein the electrode pattern layer is a film touch sensor that is manufactured through a high temperature process of 150 ℃ to 250 ℃.
The film touch sensor according to claim 1, further comprising a base film attached on the electrode pattern layer through an adhesive layer.
The film touch sensor according to claim 7, wherein the adhesive layer has an elastic modulus of 107 Pa to 109 Pa and a peel force of 10 N / 25 mm or more.
8. The film touch sensor of claim 7, further comprising a second protective layer positioned between the electrode pattern layer and the adhesive layer.
An image display device comprising the film touch sensor of claim 1.
Forming a separation layer on the carrier substrate;

Forming an inorganic protective layer having an elastic modulus of 10 GPa to 15 GPa on the separation layer;

Forming an electrode pattern layer on the inorganic protective layer; And

Peeling the separation layer from the carrier substrate.
The method of claim 11, wherein the inorganic protective layer is a silicon oxide layer having a thickness of less than 200 nm.
The method of claim 11, wherein the inorganic protective layer is formed through a curing process at 160 to 240 ° C. for 10 to 30 minutes after coating.
The method of claim 11, wherein the electrode pattern layer is formed through a high temperature process of 150 ° C. to 250 ° C. 13.
The method of claim 11, further comprising: forming an adhesive layer on the electrode pattern layer; And attaching a base film on the adhesive layer.
Forming a separation layer on the carrier substrate;

Forming an inorganic protective layer having a thickness of less than 200 nm and an elastic modulus of 10 Gpa to 15 Gpa on the separation layer; And

And forming an electrode pattern layer on the inorganic protective layer through a high temperature process between 150 ° C. and 250 ° C .;