WO2016148340A1 - Diplexeur diélectrique - Google Patents

Diplexeur diélectrique Download PDF

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Publication number
WO2016148340A1
WO2016148340A1 PCT/KR2015/005277 KR2015005277W WO2016148340A1 WO 2016148340 A1 WO2016148340 A1 WO 2016148340A1 KR 2015005277 W KR2015005277 W KR 2015005277W WO 2016148340 A1 WO2016148340 A1 WO 2016148340A1
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Prior art keywords
pattern
input
resonance
output
patterns
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PCT/KR2015/005277
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English (en)
Korean (ko)
Inventor
류지만
김덕한
장대훈
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(주)파트론
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Publication of WO2016148340A1 publication Critical patent/WO2016148340A1/fr

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters
    • H01P1/208Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters
    • H01P1/208Cascaded cavities; Cascaded resonators inside a hollow waveguide structure
    • H01P1/2084Cascaded cavities; Cascaded resonators inside a hollow waveguide structure with dielectric resonators
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/213Frequency-selective devices, e.g. filters combining or separating two or more different frequencies

Definitions

  • the present invention relates to a dielectric diplexer, and more particularly, to a dielectric diplexer capable of filtering and outputting an input signal according to a frequency band.
  • Japanese Patent Laid-Open No. 2001-136004 discloses such a dielectric monoblock diplexer.
  • the insertion loss is small and the physical size is small, so that it can be miniaturized.
  • conventional diplexers using dielectric monoblocks have been difficult to have wideband characteristics, and it is difficult to control parasitic capacitances between resonance holes. Accordingly, there is a need for a dielectric diplexer that can solve this problem.
  • the problem to be solved by the present invention is to provide a diplexer having a small size and low insertion loss.
  • Another object of the present invention is to provide a diplexer having a configuration capable of maximally suppressing unintended parasitic capacitance between resonance holes formed in a dielectric monoblock.
  • Another object of the present invention is to provide a diplexer capable of securing a wide bandwidth and having excellent attenuation characteristics of a cutoff band.
  • Dielectric diplexer of the present invention for solving the above problems, a dielectric block formed with a plurality of resonant holes penetrating from the first surface to the second surface facing the first surface, the inner pattern formed on the inner surface of the resonance hole A ground pattern formed on at least a portion of an outer surface of the dielectric block, first to third input / output patterns formed on the dielectric block, a low pass filter part, a band pass filter part, and an electrical connection with the ground pattern; And a metal cover facing the surface and spaced apart from each other, wherein the low pass filter unit is formed on the first surface of the first resonance hole located on one side of the dielectric block among the plurality of resonance holes and on the first surface, A first inductance pattern connected to the input / output pattern and the inner pattern of the first resonance hole, and formed on the first surface, and connected to the second input / output pattern and the inner pattern of the first resonance hole.
  • the first to third input / output patterns may be sequentially arranged in the dielectric block, and the first resonance hole may be disposed between the first input / output pattern and the second input / output pattern.
  • the second resonance hole may be located between the second input / output pattern and the third input / output pattern.
  • the first resonance hole includes a plurality of resonance holes arranged in one direction
  • the low pass filter unit is formed on the first surface, between the plurality of first resonance holes In may further include a third inductance pattern connecting each of the internal patterns.
  • the first capacitance pattern may include a plurality of patterns connected to the inner patterns of each of the plurality of first resonance holes and spaced apart from each other.
  • the second resonant hole includes a plurality of resonant holes arranged in one direction, the second capacitance pattern is connected to the internal patterns of each of the plurality of second resonant holes, It may include a plurality of patterns spaced apart.
  • the inner pattern of the second resonance hole may be electrically connected to the ground pattern formed on the second surface.
  • the metal cover, the coupling portion coupled to the ground pattern formed on the surface connecting the first surface and the second surface and bent at one end of the coupling portion spaced apart from the first surface It may include a bent portion facing the state.
  • the coupling portion may be coupled to the ground pattern through a conductive adhesive.
  • the metal cover is coupled to one of the surfaces connecting the first surface and the second surface, the first to third input and output patterns are the first surface and the second surface It may be formed on the other surface facing the one of the surfaces connecting the.
  • the dielectric diplexer according to the embodiment of the present invention is small in size and low in insertion loss.
  • the dielectric diplexer according to an embodiment of the present invention can suppress the unintended parasitic capacitance between resonance holes formed in the dielectric monoblock to the maximum.
  • the dielectric diplexer according to an embodiment of the present invention has a feature of excellent attenuation characteristic of the blocking band while ensuring a wide bandwidth.
  • FIG. 1 is a perspective view of a dielectric diplexer according to an embodiment of the present invention.
  • FIG. 2 is an exploded perspective view of a dielectric diplexer according to an embodiment of the present invention.
  • FIG. 3 is a perspective view of the dielectric diplexer according to the exemplary embodiment viewed from a direction different from that of FIG. 1.
  • FIG. 4 is an equivalent circuit diagram of a dielectric diplexer according to an embodiment of the present invention.
  • FIG. 5 is a graph illustrating frequency response characteristics of a dielectric diplexer according to an embodiment of the present invention.
  • first or second may be used to describe various components.
  • the components are not limited to the above terms. The term may be used to distinguish one component from another. Therefore, the first component referred to herein may be a second component within the technical spirit of the present invention.
  • FIG. 1 is a perspective view of a dielectric diplexer according to an embodiment of the present invention.
  • 2 is an exploded perspective view of a dielectric diplexer according to an embodiment of the present invention.
  • 3 is a perspective view of the dielectric diplexer according to the exemplary embodiment viewed from a direction different from that of FIG. 1.
  • the dielectric diplexer includes a dielectric block 110, a resonance hole 120, an internal pattern 130, a ground pattern 140, an input / output pattern 150, and a low pass filter unit 200. ), The band pass filter unit 300 and the metal cover 400.
  • the dielectric block 110 is formed in a block shape such as a cube.
  • the dielectric block 110 may be formed of a ceramic material, an alumina material, or the like.
  • the dielectric block 110 is preferably formed of a material having a relative dielectric constant of 3.5 or more.
  • the dielectric block 110 is illustrated as having a rectangular parallelepiped shape, but is not limited thereto.
  • the dielectric block 110 may include a first surface 111 and a second surface 112 facing each other.
  • the dielectric block 110 may include surfaces connecting the first surface 111 and the second surface 112.
  • the first surface 111 and the second surface 112 may be front and rear surfaces of the dielectric block 110.
  • the surfaces connecting the first surface 111 and the second surface 112 may include an upper surface, a lower surface, a left side, and a right side.
  • the resonance hole 120 may be formed in the dielectric block 110.
  • the resonance hole 120 may penetrate from the first surface 111 to the second surface 112 of the dielectric block 110.
  • the resonance hole 120 may have a circular cross section. By the resonance hole 120, a cylindrical cavity may be formed in the dielectric block 110.
  • a plurality of resonance holes 120 may be formed in the dielectric block 110.
  • the plurality of resonance holes 120 may be arranged in one direction in the dielectric block 110.
  • the plurality of resonance holes 120 may be arranged from one side to the other side of the dielectric block 110 in a parallel form, respectively.
  • a portion of the plurality of resonance holes 120 biased to one side of the dielectric block 110 may be the first resonance hole 121.
  • another portion of the plurality of resonant holes 120 which is biased to the other side of the dielectric block 110 may be the second resonant hole 122.
  • the first resonance hole 121 and the second resonance hole 122 may include a plurality of resonance holes 120, respectively.
  • the plurality of resonant holes 120 not the first resonant hole 121 but also the second resonant hole 122 other than the resonant hole 120 may exist.
  • 310 may be a conductive layer bonded to the surface of the dielectric block 110.
  • These patterns 130, 140, 150, 210, 220, 230, 240, and 310 may be formed of a conductive material through which electricity flows.
  • the patterns 130, 140, 150, 210, 220, 230, 240, and 310 may be formed of a plating layer bonded to the surface of the dielectric block 110.
  • the thicknesses of the patterns 130, 140, 150, 210, 220, 230, 240, and 310 are not separately expressed in the accompanying drawings, the patterns 130, 140, 150, 210, 220, 230, and 240 are not separately represented.
  • 310 may be formed of a thin film having a thickness of several ⁇ m to several hundred ⁇ m on the surface of the dielectric block 110.
  • the inner pattern 130 is formed on the inner surface of the resonance hole 120.
  • the inner pattern 130 may extend from the opening surface of the first surface 111 side of the resonance hole 120 to the opening surface of the second surface 112 side.
  • the inner pattern 130 formed on each opening surface side may be electrically connected to other patterns formed on the first surface 111 and the second surface 112 around each opening surface. This electrical connection will be described in detail below.
  • the ground pattern 140 is formed on at least a portion of the outer surface of the dielectric block 110.
  • the ground pattern 140 may be formed to surround the input / output pattern, inductance patterns 210, 220, and 230 and the capacitance patterns 240 and 310 to be described later.
  • the ground pattern 140 may be formed on all surfaces of the outer surface of the dielectric block 110, but in some cases, the ground pattern 140 may not be formed. In more detail, the ground pattern 140 may not be formed on the left side and / or the right side of the dielectric block 110.
  • the input / output pattern 150 is formed on at least a portion of an outer surface of the dielectric block 110.
  • the input / output pattern 150 may be formed on the first surface 111 or the lower surface of the dielectric block 110.
  • the dielectric diplexer may be mounted so as to be oriented so as to contact the substrate on which the bottom surface is mounted.
  • the input / output pattern 150 may include a plurality of input / output patterns.
  • the input / output pattern 150 may include first to third input / output patterns 151, 152, and 153 that are distinguished from each other.
  • the first to third input / output patterns 151, 152, and 153 may be formed in the dielectric block 110 in one direction.
  • the first input / output pattern 151 is formed on one side of the dielectric block 110
  • the second input / output pattern 152 is on one side and the other side of the dielectric block 110.
  • the third input / output pattern 153 may be formed on the other side of the dielectric block 110.
  • Each input / output pattern 150 may be used to input or output a signal to the dielectric diplexer.
  • the second input / output pattern 152 may receive a signal as an input terminal
  • the first and third input / output patterns 153 may output a frequency selective filtered signal as an output terminal. have.
  • the dielectric diplexer includes a low pass filter unit 200 and a band pass filter unit 300 formed at spaced positions, respectively.
  • the low pass filter unit 200 may be formed at one side of the dielectric block 110
  • the band pass filter unit 300 may be formed at the other side of the dielectric block 110. More specifically, the low pass filter unit 200 may be formed between a portion of the first input / output pattern 151 and the second input / output pattern 152 of the dielectric block 110.
  • the band pass filter unit 300 may be formed between the second input / output pattern 152 and the third input / output pattern 153 of the dielectric block 110.
  • the low pass filter unit 200 will be described first.
  • the low pass filter unit 200 includes a first resonance hole 121, a first inductance pattern 210, a second inductance pattern 220, a third inductance pattern 230, and a first capacitance pattern 240. .
  • the first resonant hole 121 may be a part of the plurality of resonant holes 120 biased to one side of the dielectric block 110.
  • the first resonance hole 121 may include a plurality of resonance holes 121. 2 and 3, five resonance holes 121 formed at one side of the dielectric block 110 are illustrated as the first resonance holes 121, but the number and positions of the first resonance holes 121 are It can be changed according to the design of those skilled in the art.
  • the first to third inductance patterns 210, 220, and 230 are formed on the first surface 111 of the dielectric block 110.
  • the first capacitance pattern 240 is formed on the second surface 112 of the dielectric block 110. Accordingly, the first to third inductance patterns 210, 220, and 230 and the first capacitance pattern 240 are formed on surfaces facing each other.
  • the first to third inductance patterns 210, 230, and 230 and the first capacitance pattern 240 are formed so as not to be directly connected to the ground pattern 140.
  • the first to third inductance patterns 230, the first capacitance pattern 240, and the ground pattern 140 may be formed in a non-pattern region, which is a non-conductive region, to be spaced apart from each other.
  • the non-patterned region may be a portion where the conductive pattern formed on the dielectric block 110 is removed using a laser or the like.
  • a first inductance pattern 210 is formed on the first surface 111 and the internal patterns of the first input / output pattern 151 and the first resonance hole 121 are described. 131 is connected.
  • the second inductance pattern 220 is formed on the first surface 111 and is connected to the second input / output pattern 152 and the inner pattern 131 of the first resonance hole 121.
  • the third inductance pattern 230 is formed on the first surface 111 and connects the respective internal patterns 130 between the plurality of first resonance holes 121.
  • the first inductance pattern 210 is connected to the internal pattern 130 of the resonance hole 120 located at one end of the first input / output pattern 151 and the first resonance hole 121. .
  • the first inductance pattern 210 is opened on the first surface 111 of the first surface 111 of the resonance hole 120 located at one end of the first resonance hole 121 in the first input / output pattern 151 on the first surface 111. It extends around the sphere.
  • the first inductance pattern 210 around the opening surface of the first surface 111 and the internal pattern 130 of the resonance hole 120 are electrically connected to each other.
  • the first inductance pattern 210 may be formed in a line shape having a predetermined thickness. The inductance between the first input / output pattern 151 and the inner pattern 131 of the first resonance hole may be changed according to the shape of the line and the thickness of the line.
  • the second inductance pattern 220 is connected to the internal pattern 130 of the resonance hole 120 located at the other end of the second input / output pattern 152 and the first resonance hole 121.
  • the second inductance pattern 220 is opened on the first surface 111 side of the resonance hole 120 located at the other end of the first resonance hole 121 in the second input / output pattern 152 on the first surface 111. It extends around the sphere.
  • the second inductance pattern 220 around the opening surface of the first surface 111 and the internal pattern 130 of the resonance hole 120 are electrically connected to each other.
  • the second inductance pattern 220 may be formed in a line shape having a predetermined thickness. The inductance between the second input / output pattern 152 and the inner pattern 131 of the first resonance hole may be changed according to the shape of the line and the thickness of the line.
  • the third inductance pattern 230 connects the respective internal patterns 130 of the plurality of first resonance holes 121 from one side to the other side.
  • the third inductance pattern 230 connects the internal patterns 130 around the opening surface on the side of the first surface 111 of each of the plurality of first resonance holes 121 on the first surface 111.
  • the third inductance pattern 230 may be disposed between the adjacent resonance holes 120 among the plurality of first resonance holes 121 to connect the respective internal patterns 130.
  • the third inductance pattern 230 may be formed in a line shape having a predetermined thickness. The inductance between the internal patterns 131 of the plurality of first resonance holes may be changed according to the shape of the line and the thickness of the line.
  • the first capacitance pattern 240 is formed on the second surface 112, is connected to the internal pattern 131 of the first resonance hole 121, and is grounded. Spaced apart from the pattern 140.
  • the first capacitance pattern 240 may be connected to the internal patterns 130 of each of the plurality of first resonance holes 121, and may include a plurality of patterns spaced apart from each other.
  • the first capacitance pattern 240 is formed around the opening surface of the second surface 112 side of the first resonance hole 121 to be electrically connected to the internal pattern 130.
  • the first capacitance pattern 240 is surrounded by the non-patterned area and spaced apart from the surrounding ground pattern 140.
  • the first capacitance may be formed in a predetermined shape, and may be spaced apart from the ground pattern 140 at a predetermined interval by the non-patterned region.
  • the capacitance between the internal pattern 131 of the first resonance hole 121 and the ground pattern 140 may be changed according to the shape and the spacing interval of the first capacitance pattern 240.
  • the low pass filter unit 200 including the first resonance hole 121, the first inductance pattern 210, the second inductance pattern 220, the third inductance pattern 230, and the first capacitance pattern 240. Can function as a low pass filter.
  • the low pass filter 200 may function as a low pass filter between the first input / output pattern 151 and the second input / output pattern 152. Detailed description thereof will be described later.
  • band pass filter 300 will be described.
  • the band pass filter unit 300 includes a second resonance hole 122 and a second capacitance pattern 310.
  • the second resonator hole 122 may be a portion of the plurality of resonant holes 120 that are biased to the other side of the dielectric block 110.
  • the second resonance hole 122 may include a plurality of resonance holes 122. 2 and 3, four resonance holes 122 formed on the other side of the dielectric block 110 are illustrated as second resonance holes 122, but the number and positions of the second resonance holes 122 are It can be changed according to the design of those skilled in the art.
  • a ground resonance hole may be formed between the first resonance hole 121 and the second resonance hole 122. The number and position of the ground resonant holes can be changed according to the design of those skilled in the art.
  • the second capacitance pattern 310 is formed on the first surface 111 of the dielectric block 110. Accordingly, the second capacitance pattern 310 is formed on the same surface of the first to third inductance patterns 230 and the dielectric block 110 of the low pass filter unit 200.
  • the second capacitance pattern 310 is formed so as not to be directly connected to the ground pattern 140.
  • the second capacitance pattern 310 is formed to be spaced apart from each other on the first surface 111 with the non-pattern region interposed therebetween.
  • the second capacitance pattern 310 may be connected to the ground pattern 140 at the second surface 112 through the inner pattern 132 of the second resonance hole 122. There is a number.
  • the second capacitance pattern 310 is formed on the first surface 111, is connected to the internal pattern 132 of the second resonance hole 122, and is grounded.
  • the pattern 140 is spaced apart from the second and third input / output patterns 152 and 153.
  • the second capacitance pattern 310 is formed around the opening surface of the first surface 111 side of the second resonance hole 122 to be electrically connected to the internal pattern 130.
  • the second capacitance pattern 310 is surrounded by the non-patterned area and spaced apart from the surrounding ground pattern 140.
  • the second capacitance pattern 310 may be formed in a predetermined shape, and may be spaced apart from the ground pattern 140 at a predetermined interval by the non-patterned region.
  • the capacitance between the inner pattern 132 of the second resonance hole 122 and the ground pattern 140 may be changed according to the shape and spacing interval of the second capacitance pattern 310.
  • the second capacitance pattern 310 is spaced apart from the second and third input / output patterns 153 on the first surface 111.
  • a non-pattern region may be formed between the second capacitance pattern 310 and the second and third input / output patterns 153 to be spaced apart from each other.
  • the capacitance between the internal pattern 132 of the second resonance hole 122 and the second and third input / output patterns 153 may be changed according to the shape of the second capacitance and the separation interval.
  • the internal pattern 130 on the second surface 112 side of the second resonance hole 122 may be electrically connected to the ground pattern 140 formed on the second surface 112. Is connected.
  • the band pass filter unit 300 including the second resonance hole 122 and the second capacitance pattern 310 may function as a band pass filter.
  • the band pass filter unit 300 may function as a band pass filter between the second input / output pattern 152 and the third input / output pattern 153. Detailed description thereof will be described later.
  • the metal cover 400 includes a coupling part 410 coupled to the ground pattern 140 and a bent part 420 formed by bending at one end of the coupling part 410.
  • the coupling part 410 may be coupled to the ground pattern 140 formed on the surface connecting the first surface 111 and the second surface 112 of the dielectric block 110.
  • the ground pattern 140 may be combined with the ground pattern 140 formed on the upper surface of the dielectric block 110.
  • the coupling part 410 and the ground pattern 140 may be coupled through solder.
  • the coupling part 410 may be coupled to the first surface 111 side of the top surface of the dielectric block 110, and one end of the coupling part 410 may extend beyond the top surface of the dielectric block 110.
  • the bent portion 420 is bent at one end of the coupling portion 410 extending beyond the upper surface of the dielectric block 110.
  • the bent portion 420 may be bent substantially vertically at the coupling portion 410 to face the first surface 111 of the dielectric block 110.
  • the bent portion 420 and the first surface 111 of the dielectric block 110 are spaced apart by a predetermined distance. Accordingly, the bent portion 420 is spaced apart from the first to third inductance pattern 230 and the first to second capacitance pattern 310 formed on the first surface 111 of the dielectric block 110 by a predetermined distance. Overlap in state.
  • the metal cover 400 may be formed of a conductive metal material.
  • the metal cover 400 may be stainless steel, copper, tin, lead, or the like. Since the metal cover 400 is coupled to the ground pattern 140, the metal cover 400 has a ground potential as a whole. Especially.
  • the bent portion 420 facing the first surface 111 in a state spaced apart has a ground potential so that the first to third inductance patterns 230 and the first to second capacitance patterns formed on the first surface 111. Unintentional coupling that can occur between 310 can be suppressed as much as possible. Without the metal cover 400, unintended coupling between components may occur between the first to third inductance patterns 230 and the first to second capacitance patterns 310 formed on the first surface 111. have. The occurrence of such coupling causes a lack of sufficient attenuation in non-pass band portions of the low pass filter and the band pass filter.
  • the metal cover 400 may include a tuning hole.
  • the tuning hole is an opening formed near a position corresponding thereto to adjust the shape of the first to third inductance patterns 230 and the first to second capacitance patterns 310.
  • FIG. 4 is an equivalent circuit diagram of a dielectric diplexer according to an embodiment of the present invention.
  • the low pass filter unit 200 and the band pass filter unit 300 will be described with reference to FIG. 4.
  • the equivalent circuit of FIG. 4 corresponds to the main inductance and capacitance of the low pass filter 200 and the band pass filter 300. Thus, some of the incidental inductance and capacitance that may occur between each component of the dielectric diplexer may not be shown in an equivalent circuit.
  • the low pass filter unit 200 is formed between the first input / output terminal port1 and the second input / output terminal port2 on an equivalent circuit.
  • the first input / output terminal port1 may correspond to the second input / output pattern 152 in the dielectric diplexer, and the second input / output terminal port2 may correspond to the first input / output pattern 151 in the dielectric diplexer. have.
  • the first input / output terminal port1 may be an antenna terminal. When a signal is input through the first input / output terminal port1, a low frequency signal may be filtered through the low pass filter unit 200 and output through the second input / output terminal port2.
  • the inductor L1 positioned between the second input / output terminal port2 and the internal pattern 130 of the first through hole may correspond to the first inductance pattern 210 of the dielectric diplexer.
  • the inductor L6 positioned between the first input / output terminal port1 and the inner pattern 130 of the second through hole may correspond to the second inductance pattern 220 of the dielectric diplexer.
  • the inductors L2, L3, L4, and L5 positioned between the internal patterns 131 of the first through holes 121 may correspond to the third inductance pattern 230 of the dielectric diplexer.
  • the capacitors C11, C12, C13, C14, and C15 positioned between the inner pattern 131 of the first through hole 121 and the ground may correspond to the first capacitance pattern 240 of the dielectric diplexer.
  • the capacitors C16, C17, C18, and C19 positioned between the internal patterns 131 of the first through holes 121 may have the internal patterns 131 of the first through holes 121 adjacent to each other in the dielectric diplexer. It may correspond to the capacitance generated between.
  • the capacitors C31 and C32 positioned between the first and second input / output terminals port1 and port2 and the ground may have a ground pattern 140 adjacent to the first and second input / output patterns 151 and 152 in the dielectric diplexer. It may correspond to the capacitance generated between.
  • the band pass filter is formed between the first input / output terminal port1 and the third input / output terminal port3 on an equivalent circuit.
  • the third input / output terminal port3 may correspond to the third input / output pattern 153 in the dielectric diplexer.
  • the capacitors C21, C22, C23, and C24 positioned between the inner pattern 132 of the second through hole 122 and the ground may be disposed between the second capacitance pattern 310 and the ground pattern 140 of the dielectric diplexer. It can correspond to the capacitance.
  • the capacitor C5 positioned between the internal pattern 132 of the through hole and the first input / output terminal port1 adjacent to the first input / output terminal port1 of the second through hole 122 may have a dielectric diplexer. Adjacent to the second input / output pattern 152 of the second through hole 122 to correspond to the capacitance between the second capacitance pattern 310 and the second input / output pattern 152 connected to the inner pattern 132 of the through hole. Can be.
  • the capacitor C1 positioned between the internal pattern 132 of the through hole and the third input / output terminal port3 adjacent to the third input / output terminal port3 of the second through hole 122 may have a dielectric diplexer.
  • the capacitance between the second capacitance pattern 310 and the third input / output pattern 153 connected to the internal pattern 132 of the through hole adjacent to the third input / output pattern 153 among the second through holes 122 may correspond to the capacitance. have.
  • the capacitors C2, C3, C4, and C5 positioned between the inner patterns 132 of the second through holes 122 are disposed between the inner patterns 132 of the second through holes 122 adjacent to each other in the dielectric diplexer. It may correspond to the capacitance generated in.
  • 5 is a graph illustrating frequency response characteristics of a dielectric diplexer according to an embodiment of the present invention. 5 is a result of measuring the second input / output pattern 152 of the dielectric diplexer by using the port 1 and the first input / output pattern 151 as the port 2 and the third input / output pattern 153 as the port 3.
  • one side of the dielectric diplexer is approximately 2.2. It can be seen that it functions as a low pass filter that passes signals that are in the lower frequency band than GHz.
  • the other side of the dielectric diplexer is It can be seen that it functions as a band pass filter that passes signals in the approximately 2.3 GHz to 2.4 GHz band.

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Abstract

La présente invention porte sur un diplexeur diélectrique. Le diplexeur diélectrique selon la présente invention comprend : un bloc diélectrique ayant une pluralité de trous de résonance formés de manière à pénétrer depuis une première surface vers une seconde surface, qui est tournée vers la première surface ; des motifs intérieurs formés sur des surfaces extérieures des trous de résonance, respectivement ; un motif de mise à la terre formé sur au moins une partie de la surface extérieure du bloc diélectrique ; de premier à troisième motifs d'entrée/sortie formés sur le bloc diélectrique ; une unité de filtre passe-bas ; une unité de filtre passe-bande ; et un couvercle métallique, qui est électriquement connecté au motif de mise à la terre, et qui est tourné vers la première surface tout en étant espacé de cette dernière, l'unité de filtre passe-bas comprenant un premier trou de résonance positionné sur un côté du bloc diélectrique parmi la pluralité de trous de résonance, un premier motif d'inductance formé sur la première surface et connecté au premier motif d'entrée/sortie et au motif intérieur du premier trou de résonance, un second motif d'inductance formé sur la première surface et connecté au deuxième motif d'entrée/sortie et au motif intérieur du premier trou de résonance, et un premier motif de capacité formé sur la seconde surface, connecté au motif intérieur du premier trou de résonance, et espacé du motif de mise à la terre, et l'unité de filtre passe-bande comprenant un second trou de résonance formé sur l'autre côté du bloc diélectrique parmi la pluralité de trous de résonance et un second motif de capacité formé sur la première surface, connecté au motif intérieur du second trou de résonance, et espacé du motif de mise à la terre et des deuxième et troisième motifs d'entrée/sortie.
PCT/KR2015/005277 2015-03-18 2015-05-27 Diplexeur diélectrique WO2016148340A1 (fr)

Applications Claiming Priority (2)

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KR1020150037216A KR20160112117A (ko) 2015-03-18 2015-03-18 유전체 다이플렉서
KR10-2015-0037216 2015-03-18

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US20080055016A1 (en) * 2006-03-08 2008-03-06 Wispry Inc. Tunable impedance matching networks and tunable diplexer matching systems
US20080272855A1 (en) * 2007-05-02 2008-11-06 Syouji Ono Laminate type band pass filter and diplexer using the same
US20090295501A1 (en) * 2006-07-03 2009-12-03 Hitachi Metals, Ltd. Diplexer circuit, high-frequency circuit and high-frequency module
US20130271239A1 (en) * 2012-04-13 2013-10-17 Yu-Lin Liao Diplexer

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* Cited by examiner, † Cited by third party
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US6362705B1 (en) * 1998-09-28 2002-03-26 Murata Manufacturing Co., Ltd. Dielectric filter unit, duplexer, and communication apparatus
US20080055016A1 (en) * 2006-03-08 2008-03-06 Wispry Inc. Tunable impedance matching networks and tunable diplexer matching systems
US20090295501A1 (en) * 2006-07-03 2009-12-03 Hitachi Metals, Ltd. Diplexer circuit, high-frequency circuit and high-frequency module
US20080272855A1 (en) * 2007-05-02 2008-11-06 Syouji Ono Laminate type band pass filter and diplexer using the same
US20130271239A1 (en) * 2012-04-13 2013-10-17 Yu-Lin Liao Diplexer

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