WO2016146534A1

WO2016146534A1 - Optoelectronic component and method for producing an optoelectronic component

Info

Publication number: WO2016146534A1
Application number: PCT/EP2016/055322
Authority: WO
Inventors: Daniel Riedel; Thomas Wehlus
Original assignee: Osram Oled Gmbh
Priority date: 2015-03-16
Filing date: 2016-03-11
Publication date: 2016-09-22
Also published as: DE102015103805A1

Abstract

An optoelectronic component (1) and a method for producing an optoelectronic component (1) are provided in various exemplary embodiments. The optoelectronic component (1) has a carrier (12), a first electrode (20) on the carrier (12), an organic functional layer structure (22) over the first electrode (20), a second electrode (23) on the organic functional layer structure (22), and at least one planarizing layer (2), which is arranged on the carrier (12) and is in physical contact with the carrier (12), and/or is arranged on the first electrode (20) and is in physical contact with the first electrode (20), and/or is arranged on the second electrode (23) and is in physical contact with the second electrode (23). The at least one planarizing layer (2) contains electrically conductive nanoparticles (122). An average roughness of a surface of the planarizing layer (2) which is opposite from the surface of the planarizing layer (2) that is in physical contact with the carrier (12) or the first electrode (20) or the second electrode (23) is less than approximately 50 nm.

Description

OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING AN OPTOELECTRONIC COMPONENT

DESCRIPTION

The invention relates to an optoelectronic component having an organic functional layer structure and to a method for producing such an optoelectronic component.

Optoelectronic components which emit light can be, for example, light-emitting diodes (LEDs) or organic ones

Be light emitting diodes (OLEDs). An OLED may have an anode and a cathode with an organic functional layer system therebetween. The organic functional

Layer system may include one or more

Emitter layers in which electromagnetic radiation is generated, a charge carrier pair generation layer structure of two or more

Charge pair generation charge generating layer (CGL) and one or more electron block layers, also referred to as hole transport layer (HT), and one or more hole block layers, also referred to as an electron transport layer (E) ("electron transport layer" - ETL) to direct the flow of current.

Individual layers of the optoelectronic component are deposited on a growth substance to produce the optoelectronic component. Here it is for one

defect-free deposition and operation of in particular organic layer structures necessary to planarize underlying layer surfaces or to reduce their roughness.

Conventionally, polymeric materials are used to planarize rough surfaces or the

To reduce surface roughness. Such polymers However, materials usually have a short life. In addition, it is conventionally often necessary to

Surface roughness with costly procedures too

reduce, for example by using expensive

made, very smooth display glass or expensive

produced electrodes.

The object of the invention is to specify an optoelectronic component which has a planarization of surfaces of individual layers in a cost-effective and / or simple manner

Way allows, in particular without requiring this cost-intensive method, and / or the at least one

Planarization layer for reducing a

Has surface roughness, and / or which is characterized by a long life of individual layers of the optoelectronic device.

A further object of the invention is to provide a method for producing an optoelectronic component, which by a cost-effective and simple way a

Planarization layer for reducing a

Surface roughness provides, and / or in particular increases the life of individual layers of the optoelectronic device,

The object is achieved according to an aspect of the invention by an optoelectronic component comprising a carrier, a first electrode on the carrier, an organic functional layer structure over the first electrode and a second electrode on the organic functional

Layer structure, and at least one

Planarisierungsschicht which is arranged on the carrier and is in physical contact with the carrier, and / or is arranged above the first electrode and with the first

Electrode is in physical contact, and / or disposed on the second electrode and with the second

Electrode in physical contact, wherein the at least one planarizing conductor electrically conductive Contains nanoparticles, and wherein an average roughness of a surface of the planarization layer, which is opposite to the surface of the planarization layer, which is in physical contact with the carrier or the first electrode or the second electrode, is less than about 50 nm.

The average roughness, represented by the symbol Ra, indicates the average distance of a measuring point - on the surface - to the center line. The centerline intersects the true profile within the datum line so that the sum of the profile deviations (relative to the centerline) becomes minimal. The average roughness R _a thus corresponds to the

arithmetic mean of the deviation from the median line.

In two dimensions, it is calculated as:

^ U N m = l n = l where the mean is computed by M N m = l n = 1.

Somewhat easier to imagine is the average roughness (in one dimension) than the height of the rectangle, which is the same length as the track to be examined and the same

Area like that area between reference height and profile has.

The optoelectronic component thus contains a

integrated planarization layer, in particular on a layer of the optoelectronic component with a high surface roughness is arranged. The

Planarization, in particular the use of electrically conductive nanoparticles, allows a

Reduction in the roughness of the underlying

Layer surface. Due to the additional electrical

It is the conductivity that the nanoparticles have

possible, rough electrodes or rough electrically conductive layers of the optoelectronic device

planarize. With the planarization layer can thus electrically conductive layers in the optoelectronic

Component find use which without planarization due to electrical defects occurring at

sensitive organic optoelectronic devices would not be usable. Costly or expensive smoothing processes, in particular costly produced, very smooth layers such as very smooth display glass, can be avoided. Lower cost layers, such as substrates or ITG layers, which have high surface roughness on iron, can be used in the

Optoelectronic device find use. Moreover, through the use of nanoparticles as

Planarisierungsschicht to expect a long life of this layer. The first electrode and the second electrode are designed to electrically contact the organic functional layer structure. By way of example, the first electrode and the second electrode are in the form of an entire surface

configured, electrically conductive electrode layer or formed as part of an electrically conductive electrode layer. The first electrode and the second electrode are preferably for common electrical

Contacting the organic functional layer structure provided. Alternatively, the organic functional

Layer structure formed be segmented, wherein j edem layer structure segment is assigned a separate electrically conductive first and / or second electrode. The organic functional layer structure is designed to convert electrical energy into light or light into electrical energy. For example, the optoelectronic component is an OLED and the organic functional layer structure is an optically active

Area of the OLED.

The planarization layer is in particular for flattening

provided at least one layer of the optoelectronic device and thus has surface roughness reducing properties in the form of electrically conductive

Nanoparticles on. In this case, the planarization layer is arranged directly on the layer to be planarized, in particular in direct physical contact and directly adjacent thereto. The layer to be leveled can

For example, be the carrier, the first electrode and / or the second electrode. To flatten the underlying

Layer is the mean roughness of the surface of the

Planarization layer, the surface of the

Planarization layer, which is in physical contact with the layer to be leveled, is less than about 50 nra.

In one embodiment, the average roughness of the

Surface of the planarization layer may be smaller than the mean roughness of the surface of the planarization layer, with the carrier or with the first electrode or with the second electrode {23) in

is in physical contact. In other words, the roughness of the underlying layer in this embodiment is higher than the roughness of the surface of the planarization

According to a development, the average roughness of

Surface of the planarization layer is smaller than

about 20 nm, preferably less than about 5 nm. Preferably, the average roughness of the surface of the

Planarization layer in a range of about 1 nra to about 50 nm. According to a development, the planarization layer contains at least one inorganic material. By using an inorganic material, a long lifetime of the planarization layer can be achieved.

According to a development, the electrically conductive nanoparticles are metal oxides, for example, the electrically conductive nanoparticles contain ITO {indium tin oxide), Al: ZnO (aluminum zinc oxide), FTO (fluorine tin oxide} and / or AZO {azo compound). Due to the electrical properties that comprise these nanoparticles, in particular electrically conductive layers of the optoelectronic

Component can be planarized without having to accept noticeable losses in electrical conductivity. Favorably processed, electrically conductive layers can thus be used in the optoelectronic component.

According to a development, the electrically conductive nanoparticles have an average diameter in a range between 1 nm and 100 nm, in particular between 5 nm and 5 nm, inclusive. The use of nanoparticles in the specified size in particular allows a reduction in the surface roughness of the layer immediately below, a

Planarization or flattening of the underlying layer can thus be generated. On costly

Procedural processes for flattening this underlying

Layer can be dispensed with. In addition, by nanoparticles in the specified size, a high

Packing density and associated high Perkol tion and electrical conductivity can be achieved

According to a development, the electrically conductive nanoparticles have a substantially spherical or

spherical shape. According to a development, the electrically conductive nanoparticles form a nanoporous layer. Thus, the electrically conductive nanoparticles form a conductive matrix and thus need not be embedded in a polymeric matrix.

According to a development is at least one

Surface area of the vehicle that the

Planarisierungsschicht facing, electrically insulating. In this surface area is therefore no electrical

Contacting the optoelectronic component provided.

According to a development, the first electrode and / or the second electrode is / are not segmented, with the planarization layer extending over the entire first electrode and / or the entire second electrode. A

Accordingly, the entire surface of the first and / or second electrode is used.

According to a development, the planarization layer contains light-scattering particles, for example TiO ₂ particles

{Titanium Dioxide Particles}, In addition to the surface roughness-reducing properties and electrical properties, the planarization layer also has light-scattering properties. The planarization layer thus also makes it possible to influence the emission characteristic of the

optoelectronic device in a desired manner.

The object is further solved by a method for

Producing an optoelectronic component,

for example, the one explained above

optoelectronic component. In the method, a first electrode is formed on a carrier, an organic functional layer structure is formed over the first electrode, and a second electrode is formed on the organic functional layer structure _. , and at least one planarization layer, which is arranged on the carrier and is brought into physical contact with the carrier, and / or arranged on the first electrode is brought into physical contact with the first electrode, and / or placed on the second electrode and brought into physical contact with the second electrode. The at least one planarization layer contains electrically conductive nanoparticles. A medium

Roughness of a surface of the planarization layer that is in physical contact with the surface of the planarization layer that is in physical contact with the carrier or the first electrode or the second electrode,

is less than about 50 nm.

The method is characterized in particular by a

inexpensive and easy way to manufacture the

Planarization layer for reducing a

Surface roughness, as well as by its reduced risk of failure of the planarization of the

optoelectronic component, in particular based on a high lifetime of the planarization layer, alternative embodiments and / or advantages concerning the planarization layer, the organic functional

Layer structure, the optoelectronic component and / or in each case components thereof are already in connection with the respective product above in the application

executed and found in the manufacturing process, of course, according to application, without explicit again here

to be listed.

In particular, the planarization layer is directly and directly above or to be planarized

planarizing layer applied, which may be for example the carrier or one of the electrodes. Alternatively, over several of these layers of the optoelectronic

Component can be applied depending on a planarization layer, in case several of these layers have a surface roughness to be reduced. According to a development for applying the

Planarisierungsschicht the electrically conductive

Nanoparticles introduced into a solvent. The electrically conductive nanoparticles thus become a solution

processed. The solvent is for example

Isopropanol, acetone or 1-methoxy-2-propanol. To apply the planarization layer, one of the following methods or solution process techniques may be used: an inkjet printing process, an offset printing process, a flexographic printing process, a gravure printing experience

Slot casting method, a screen printing method or a

Rakel-Verf listen, These methods are known in the art and are therefore not explained in detail here. To measure the surface roughness of individual layers of the optoelectronic component, a profilometer can be used

or the Tastschnittverfahren be used. This process is known to the person skilled in the art and is therefore not explained in detail here. The measurement should have a resolution of at least 10 nanometers over one

Minimum distance of 20 μπι have to roughness in the

present range, in particular less than 50 nm, preferably less than 20 nm, to be able to measure significantly. Alternatively, to measure the surface roughness of individual layers of the optoelectronic component, an AFM (Atomic Force Microscope) for the two-dimensional evaluation of the

Surface roughness find use. There are the same requirements for the resolution (<10nm) and gauge length

or in this case measuring area (20μ20μτη) to ask. A measurement of the surface roughness with an AFM is likewise known to the person skilled in the art and will therefore not be discussed further here. Embodiments of the invention are illustrated in the figures and are explained in more detail below. It shows a side sectional view of a conventional optoelectronic device; a sectional side view of a section of an embodiment of an optoelectronic device, · a sectional side view of a section of an embodiment of an optoelectronic device; 3 is a side sectional view of a section of an exemplary embodiment of an optoelectronic component, FIG. 3 is a side sectional view of an exemplary embodiment of an optoelectronic component,

In the following detailed description, reference is made to the accompanying drawings, which are part of this

In the description, specific embodiments are shown in which the invention may be practiced. In this regard will

Directional terminology such as "top", "bottom", "front", "back", "front", "rear", etc. used with reference to the orientation of the described figure (s). There

Components of embodiments in number

different orientations can be positioned, the directional terminology is illustrative and is in no way limiting. It should be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. It should be understood that the features of the various embodiments described herein are combined unless specifically stated otherwise. The following detailed description is therefore not to be taken in a limiting sense, and the scope of the present invention is defined by the appended claims.

In the context of this description, the terms

"connected", "connected" and "coupled" used to describe both a direct and indirect connection, a direct or indirect connection and a direct or indirect coupling. In the figures, identical or similar elements are provided with identical reference numerals, as appropriate. An optoelectronic component may be an electromagnetic radiation emitting device or a

be electromagnetic radiation absorbing component. An electromagnetic radiation absorbing component may be, for example, an organic solar cell or an organic photocell. An electromagnetic radiation emitting device may be in various

Embodiments as an organic electromagnetic radiation emitting diode (organic light emitting diode, OLED) or be designed as a organic electromagnetic radiation emitting transistor. The radiation may, for example, be light in the visible range, UV light and / or infrared light. The light emitting device may be part of an integrated circuit in various embodiments. Furthermore, a plurality of

Be provided light emitting devices,

For example, housed in a common housing.

Fig. 1 shows a conventional optoelectronic

Component 1. The optoelectronic component 1 has a carrier 12. The carrier 12 may be translucent or

be transparent. The carrier 12 serves as

Carrier element for electronic elements or layers, for example light-emitting elements. The carrier 12 can For example, plastic, metal, glass, quartz and / or have a semiconductor material or be formed therefrom.

Further, the carrier 12 may be a plastic film or a

Laminate with one or more plastic films

have or be formed from it. The carrier 12 may be mechanically rigid or mechanically flexible.

The carrier 12 is conventionally usually planarized or costly produced, so that individual on it

applied layers can be operated defect-free. For example, finds an expensive manufactured, very smooth display glass as a carrier 12 use.

On the carrier 12 is an opto-electronic

Layer structure formed. The optoelectronic

Layer structure has a first electrode layer 14 having a first contact portion 16, a second

Contact portion 18 and a first electrode 20 has. The carrier 12 with the first electrode layer 14 may also be referred to as a substrate. A first one may not exist between the carrier 12 and the first electrode layer 14

represented barrier layer, for example, a first

Barrier thin film, be formed. The first electrode 20 is electrically insulated from the first contact portion 16 by means of an electrical insulation barrier 21. The second contact section 18 is connected to the first electrode 20 of the optoelectronic layer structure

electrically coupled. The first electrode 20 may be formed as an anode or as a cathode. The first electrode 20 may be translucent or transparent. The first electrode 20 comprises an electrically conductive material, for example metal and / or a conductive transparent oxide (TCO) or a

Layer stacks of multiple layers comprising metals or TCOs. For example, the first electrode 20 may comprise a layer stack of a combination of a layer of a metal on a layer of a TCO, or vice versa. One An example is a silver layer deposited on an indium-tin oxide (ITO) layer (Ag on ITO) or ITO-Ag-ITO multilayers. The first electrode 20 may alternatively or in addition to the materials mentioned:

Networks of metallic nanowires and particles,

for example, from Ag, networks of carbon nanotubes, Graphene Tei1chen and layers and / or networks of semiconducting nanowires. Above the first electrode 20 is an optically functional layer structure, for example an organic

functional layer structure 22, the optoelectronic layer structure formed. The organic functional layer structure 22 may, for example, have one, two or more partial layers. For example, the organic functional layer structure 22 may include a hole injection layer, a hole transport layer, an emitter layer, a

Electron transport layer and / or a

Elektroneninj have ektionsschicht. The

Lochinj ektionsschicht serves to reduce the band gap between the first electrode and hole transport layer. In the hole transport layer, the hole conductivity is larger than the electron conductivity. The hole transport layer serves to transport the holes. In the electron transport layer, the electron conductivity is larger than that

Lochleitf ability. The electron transport layer serves to transport the holes. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Further, the organic functional layer structure 22 may be one, two or more

functional Schich enstruktur units, each having said sub-layers and / or further intermediate layers. Above the organic functional layer structure 22, the second electrode 23 is the optoelectronic one

Layer structure is formed, which is electrically coupled to the first contact portion 16. The second electrode 23 may be formed according to any of the configurations of the first electrode 20, wherein the first electrode 20 and the second electrode 23 may be the same or different. The first electrode 20 serves, for example, as the anode or cathode of the optoelectronic layer structure. The second electrode 23 serves corresponding to the first electrode as the cathode or anode of the optoelectronic

Layer structure.

The first and the second electrode 20, 23 are usually processed at high cost in order to achieve a low surface roughness and thus a defect-free deposition of subsequent layers and a defect-free operation of the optoelectronic

To enable component 1.

The optoelectronic layer structure is an electrically and / or optically active region. The active area is for example the area of the optoelectronic

Device in which electrical current flows to operate the optoelectronic component and / or in the

electromagnetic radiation is generated or absorbed. A getter structure (not shown) may be arranged on or above the active area The getter layer may be translucent, transparent or opaque The getter layer may comprise or be formed of a material that is harmful to the material the active area is, absorbs and binds.

Above the second electrode 23 and partially over the first contact portion 16 and partially over the second one

Contact section 18, an encapsulation layer 24 of the optoelectronic layer structure is formed, which encapsulates the optoelectronic layer structure. The

Encapsulation layer 24 may be formed as a second barrier layer, for example as a second barrier thin layer. The encapsulation layer 24 may also be referred to as

Thin-layer encapsulation may be referred to. The

Encapsulation layer 24 faces a barrier chemical contaminants or atmospheric sto fen, especially against water (moisture) and oxygen. The encapsulation layer 24 may be formed as a single layer, a layer stack, or a layered structure. The encapsulation layer 24 may include or be formed from: alumina, zinc oxide, zirconia,

Titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide,

Silicon oxide, silicon nitride, silicon oxynitride,

Indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof. Optionally, the first barrier layer may be formed on the carrier 12 corresponding to a configuration of the encapsulation layer 24. In the encapsulation layer 24 are above the first

Contact section 16 a first recess of the

Encapsulation layer 24 and over the second contact portion 18, a second recess of the encapsulation layer 24th

educated . In the first recess of the

Encapsulation layer 24, a first contact region 32 is exposed and in the second recess of

Encapsulation layer 24, a second contact region 34 is exposed. The first contact region 32 serves for

electrical contacting of the first contact portion 16 and the second contact portion 34 is for electrical

Contacting the second contact portion 18.

Over the encapsulation layer 24, an adhesive layer 36 is formed. The adhesive layer 36 comprises, for example, an adhesive, for example an adhesive, for example a laminating adhesive, a lacquer and / or a resin. The adhesive layer 36 may, for example, comprise particles which scatter electromagnetic radiation, for example light-emitting particles.

Over the adhesive layer 36, a cover 38 is formed. The adhesive layer 36 serves to attach the cover 38 to the encapsulation layer 24. The cover 38 has For example, plastic and / or metal. For example, the cover 38 may be formed substantially of glass and a thin metal layer, such as a

Metal foil, and / or a graphite layer, such as a graphite laminate, have on the glass body. The cover 38 serves to protect the conventional optoelectronic component 1, for example against mechanical

Force effects from the outside. Further, the cover 38 may serve for distributing and / or dissipating heat generated in the conventional optoelectronic component 1. For example, the glass of the cover 38 serve as protection against external influences and the metal layer of the

Cover 38 may serve to distribute and / or dissipate the heat generated during operation of the conventional optoelectronic component 1.

FIG. 2A shows a detail of an exemplary embodiment of an optoelectronic component 1 which, for example, largely corresponds to the optoelectronic component shown in FIG

Component 1 may correspond. The optoelectronic

Component 1 has on the carrier 12, which is formed in particular as a glass substrate, the first electrode, which is in particular an ITO layer and serves as an anode (not shown), the organic functional layer structure on the first electrode (not shown) second electrode on the organic functional

Layer structure, which is in particular an Al layer and serves as a cathode (not shown), the

Encapsulation layer, which is in particular a TFE layer, on the second electrode (not shown), the

Adhesive layer on the encapsulation layer (not

shown), and the cover (not shown).

The organic functional layer structure may have one, two or more sublayers. For example, the organic functional layer structure may be the

Hole injection layer, the hole transport layer, the

Emitter layer, the electron transport layer and / or the Elektroneninj have ektionsschicht. The

Hole conductivity. The electron transport layer serves to transport the holes. The electron injection layer serves to reduce the band gap between the second electrode and the electron transport layer. Further, the organic functional layer structure may be one, two or more

functional layer structure units, each having the said sub-layers and / or further intermediate layers.

The encapsulation layer can act as a barrier layer,

for example, as a barrier thin film, be formed. The encapsulation layer can also be referred to as thin-layer encapsulation. The encapsulation layer forms one

Barrier to chemical contaminants or

atmospheric substances, in particular to water

(Moisture) and oxygen. The encapsulation layer may be in the form of a single layer, a layer stack or a

Layer structure be formed. The encapsulation layer may include or be formed from: alumina,

Zinc oxide, zirconium oxide, titanium oxide, hafnium oxide, tantalum oxide, lanthanum oxide, silicon oxide, silicon nitride,

Silicon oxynitride, indium tin oxide, indium zinc oxide, aluminum doped zinc oxide, poly (p-phenylene terephthalamide), nylon 66, and mixtures and alloys thereof or

Tetrafluoroethylene (TFE).

The electrode layer serves to secure the cover to the encapsulation layer. The cover serves to protect the optoelectronic component 1, for example

mechanical forces from outside. Further, the cover may serve for distributing and / or removing heat, which is generated in the optoelectronic component 1. The cover may in particular comprise or be a metal layer or a metal foil, for example one

Aluminum foil.

The carrier 12 serves as a carrier element for the further layers arranged thereon. Here, the carrier 12 has a high surface roughness, which may be disadvantageous for a defect-free operation of the optoelectronic component 1. Therefore, on a surface 121 of the carrier 12, on which the further layers of the optoelectronic

Component 1 are applied, a Planarisierungsschiebt 2 applied. This is in direct physical contact with the carrier 12. An average roughness of a surface 1210 of the planarization layer 2, which pushes the surface of the planarization 2, which coincides with the carrier 12 in FIG

physical contact is less than about 50 nm, preferably less than about 20 nm,

preferably less than about 5 nm. The average roughness of the surface 1210 of the planarization layer 2 is more preferably in a range of about 1 nm to about 50 nm.

The planarization layer 2 contains electrically conductive nanoparticles 122 and serves, in particular, for the

Surface roughness of the carrier 12 to reduce. The

electrically conductive nanoparticles 122 are, for example, metal oxides, in particular ITO particles, ITO / AZO particles, Al: ZnO particles and / or FTO particles. The electrically conductive nanoparticles have a medium

Diameter in a range between 1 nm and 100 nm inclusive, in particular between 5 nm and 50 nm inclusive. The electrically conductive nanoparticles 122 have a substantially spherical or spherical shape.

The planarization layer 2 contains an inorganic

Material, and in particular no polymeric matrix.

In particular, the electrically conductive nanoparticles form 122 itself a matrix. This can be a high

Life of the planarization layer 2 are provided. Optionally, the planarization layer 2 contains

light-scattering particles, for example T O 2 particles, the planarization layer 2 additionally serves as an electrically conductive litter layer for the particles of the

optoelectronic component 1 emitted radiation,

For applying the planarization layer 2 on the carrier 12, in particular the electrically conductive nanoparticles 122, they are processed in solution and are then present in a corresponding solvent. The solvent is, for example, isopropanol, acetone or 1-methoxy-2-propanol. Here, the electrically conductive nanoparticles by means of an ink jet printing method, a

Offset printing method, a flexographic printing method, a gravure printing method, a slot-casting method, a screen printing method or a doctor blade method applied to the carrier 12.

FIG. 2B shows a section of an exemplary embodiment of an optoelectronic component 1 which, for example, can largely correspond to the optoelectronic component 1 shown in FIG. 1 or FIG. 2A. In this case, the planarization layer 2 is applied on a surface 121a of the first electrode 20, on which the further layers of the optoelectronic component 1 are applied. This is in direct contact with the first electrode 20

physical contact. The average roughness of the surface 1210 of the Pianarisierungsschicht 2, the surface of the

Planarization layer 2, which is in physical contact with the first electrode 20, is less than about 50 nm, preferably less than about 20 nm, preferably less than about 5 nm. The average roughness of the surface 1210 of the planarization layer 2 is particularly preferably in a range of about 1 nm to about 50 nm. The first electrode 20 has the planarization layer 2 on the surface roughness reducing surface.

Due to the electrical conductivity of the

Planarisierungsschicht 2, in particular the electrical

conductive nanoparticles, thereby becomes the electric

Operating the optoelectronic device is not adversely affected due to occurring electrical defects.

FIG. 2C shows a section of an exemplary embodiment of an optoelectronic component 1 which, for example, largely corresponds to that in FIG. 1 or FIG. 2A

or Figure 2B shown optoelectronic

Component 1 may correspond. In this case, the planarization layer 2 is applied to a surface 121b of the second electrode 23. This is in direct physical contact with the second electrode 23. The mean roughness of the

Surface 1210 of the planarization layer 2, the

Surface of the planarization layer 2, which is in physical contact with the second electrode 23 is opposite, is smaller than about 50 nm, preferably smaller than

about 20 nm, preferably less than about 5 nm. The average surface roughness 1210 of the

Planarization layer 2 is more preferably in a range of about 1 nm to about 50 nm.

The second electrode 23 has the planarization layer 2 on the surface roughness reducing surface. Due to the electrical conductivity of the

Planarisierungsschicht 2, in particular the electrical

conductive nanoparticles, thereby becomes the electric

FIG. 3 shows a detail of an exemplary embodiment of an optoelectronic component 1 which, for example, largely corresponds to that in FIG. 1 or FIG. 2B

or Figure 2C shown optoelectronic

Component 1 may correspond. The first electrode 20 is formed segmented and thus has a plurality of electrode elements 19. The planarization layer 2 extends into intermediate spaces between the

Electrode segments 19 and connects adjacent

Electrode elements 19 via the gap electrically conductive with each other, In addition, the planarization layer 2 extends uniformly over the intermediate spaces and the

Electrode elements 19. In this case, the planarization layer. 2 the previously described effect of reducing the

Surface roughness, which results from the electrically conductive nanoparticles in the planarization. In particular, the average roughness of the surface 1210 of the planarization layer 2, which is opposite to the surface of the planarization layer 2 which is in physical contact with the electrode elements 19, is less than approximately 50 nm, preferably less than approximately 20 nm,

Preferably, less than about 5 nm. The average roughness of the surface 1210 of the planarization layer 2 is more preferably in a range of about 1 nm to about 50 nm.

The invention is not limited to those specified

Embodiments limited. For example, the optoelectronic component 1, in particular the organic functional layer structure 22, may be segmented. Alternatively or additionally, a plurality of optoelectronic components 1 can be arranged next to one another to form an optoelectronic assembly. REFERENCE IDENTI

Optoelectronic component 1

Planarization Layer 2

Carrier 12

First electrode layer 14

First contact section 16

Second contact section 18

Electrode segments 19

First electrode 20

Isolation barrier 21

Organic functional layer structure 22

Second electrode 23

Encapsulation layer 24

first contact area 32

second contact area 34

Adhesive layer 36

Cover 38

Surface carrier 121

Nanoparticles 1222

Surface planarization layer 1210

Claims

claims

Optoelectronic component (1), comprising:

a carrier (12); and

a first electrode (20) on the carrier (12); and an organic functional layer structure (22) over the first electrode (20); and

a second electrode (23) on the organic

functional layer structure (22); and

at least one planarization layer (2), the

• on the support (12) is arranged and with the

Carrier (12) is in physical contact, and / or,

Is disposed on the first electrode (20) and in physical contact with the first electrode (20), and / or

• on the second electrode (23) is arranged and with the second electrode (23) in physical

Contact is;

wherein the at least one planarization layer (2) contains electrically conductive anoparticles (122), and wherein an average roughness of a surface of the

Planarisierungsschicht (2), the surface of the planarization layer (2), with the support (12) and the first electrode (20)

or the second electrode (23) in

physical contact is opposite, less than about 50 nm.

Optoelectronic component (1) according to claim 1, wherein the average roughness of the surface of the

Planarization layer (2) is less than about 20 nm, preferably less than about 5 nm.

Optoelectronic component (1) according to claim 1 or 2,

the mean roughness of the surface of the

Planarisierungsschicht (2) is smaller than the average roughness of the surface of the planarization layer (2), with the carrier (12) or the first

Electrode (20 ·) or the second electrode (23) is in physical contact. "

Optoelectronic component according to one of

previous claims,

the mean roughness of the surface of the

Planarization layer (2) in a range from about 1 nm to about 50 nm.

Optoelectronic component according to one of

previous claims,

wherein the planarization layer (2) is inorganic

Contains material.

Optoelectronic component according to one of

previous claims,

wherein the electrically conductive nanoparticles (122)

Metal oxides are.

Optoelectronic component (1) according to claim 6, wherein the electrically conductive nanoparticles (122) contain ITO, Al: ZnO and / or FTO.

Optoelectronic component (1) according to one of the preceding claims,

wherein the electrically conductive nanoparticles (122) have an average diameter in a range between 1 nm and 100 nm inclusive, in particular between 5 nm and 50 nm inclusive.

Optoelectronic component (1) according to one of the preceding claims,

wherein the electrically conductive nanoparticles (122) have a substantially spherical or spherical shape.

10. Optoelectronic component (1) according to one of

previous claims,

wherein at least a surface area of the carrier {12) facing the planarization layer (2) is electrically insulating.

Optoelectronic component (1) according to one of the preceding claims,

wherein the first electrode (20) and / or the second

Electrode (23) are unsegmented, and

wherein the planarization layer (2) over the entire first electrode (20) and / or the entire

Extends electrode (23),

Method for producing an optoelectronic

Component (1), wherein

a first electrode (20) on a support (12)

is trained; and

forming an organic functional layer structure (22) over the first electrode (20); and

a second electrode (23) on the organic

functional layer structure (22} is formed;

at least one planarization layer (2) is formed, the

• placed on the support (12) and brought into physical contact with the support (12),

• arranged on the first electrode (20) and brought into physical contact with the first electrode (20), and / or

• disposed on the second electrode (23) and brought into physical contact with the second electrode (23), wherein

the at least one planarization layer (2)

electrically conductive nanoparticles (122); and wherein an average roughness of a surface of the

Planarisierungsschicht (2), the surface of the

Planarisation layer (2) connected to the support (12) or the first electrode (20)

or the second electrode {23} in

physical contact, is less than about 50 nm.

Method according to claim 12,

where to

Applying the electrically conductive nanoparticles (122) are introduced into a solvent.

Method according to claim 13,

wherein the solvent is isopropanol, ethanol, acetone or 1-methoxy-2-propanol,

The method according to claim 13 or 14

wherein the electrically conductive nanoparticles (122) are applied by means of an ink jet printing method, an offset printing method, a plexo printing method, a gravure printing method, a slot casting method, a screen printing method, or a squeegee method.