WO2016143547A1 - Élément de conversion photoélectrique, dispositif de conversion photoélectrique, procédé de production d'élément de conversion photoélectrique et procédé de production de dispositif de conversion photoélectrique - Google Patents
Élément de conversion photoélectrique, dispositif de conversion photoélectrique, procédé de production d'élément de conversion photoélectrique et procédé de production de dispositif de conversion photoélectrique Download PDFInfo
- Publication number
- WO2016143547A1 WO2016143547A1 PCT/JP2016/055764 JP2016055764W WO2016143547A1 WO 2016143547 A1 WO2016143547 A1 WO 2016143547A1 JP 2016055764 W JP2016055764 W JP 2016055764W WO 2016143547 A1 WO2016143547 A1 WO 2016143547A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- photoelectric conversion
- semiconductor film
- amorphous semiconductor
- forming
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 210
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000000463 material Substances 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 239000012535 impurity Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- -1 polyethylene naphthalate Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
La présente invention concerne un élément de conversion photoélectrique (10) qui est pourvu : d'un film semi-conducteur amorphe (3) ayant un premier type de conductivité et d'un film semi-conducteur amorphe (5) ayant un second type de conductivité qui sont sur une face d'un substrat semi-conducteur (1) ayant un premier type de conductivité ou un second type de conductivité; une première électrode (11) sur le film semi-conducteur amorphe (3) ayant un premier type de conductivité; une seconde électrode (12) sur le film semi-conducteur amorphe (5) ayant un second type de conductivité; et une couche isolante (13) recouvrant la première face du substrat semi-conducteur (1). La couche isolante (13) est pourvue d'une ouverture (14) pour son raccordement électrique à la première électrode (11) et pour son raccordement électrique à la seconde électrode (12).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017504969A JPWO2016143547A1 (ja) | 2015-03-06 | 2016-02-26 | 光電変換素子、光電変換装置、光電変換素子の製造方法および光電変換装置の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-044497 | 2015-03-06 | ||
| JP2015044497 | 2015-03-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2016143547A1 true WO2016143547A1 (fr) | 2016-09-15 |
Family
ID=56880311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/JP2016/055764 WO2016143547A1 (fr) | 2015-03-06 | 2016-02-26 | Élément de conversion photoélectrique, dispositif de conversion photoélectrique, procédé de production d'élément de conversion photoélectrique et procédé de production de dispositif de conversion photoélectrique |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2016143547A1 (fr) |
| WO (1) | WO2016143547A1 (fr) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009096539A1 (fr) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | Élément de batterie solaire et procédé de fabrication d'élément de batterie solaire |
| JP2013058808A (ja) * | 2012-12-25 | 2013-03-28 | Sharp Corp | 太陽電池および太陽電池の製造方法 |
| JP2013125853A (ja) * | 2011-12-14 | 2013-06-24 | Hitachi Plant Technologies Ltd | 太陽電池モジュールの製造方法および製造装置 |
| JP2014199859A (ja) * | 2013-03-29 | 2014-10-23 | 大日本印刷株式会社 | 太陽電池モジュール用集電シートの製造方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2880989B1 (fr) * | 2005-01-20 | 2007-03-09 | Commissariat Energie Atomique | Dispositif semi-conducteur a heterojonctions et a structure inter-digitee |
| EP2605286A1 (fr) * | 2011-12-13 | 2013-06-19 | Samsung SDI Co., Ltd. | Module photoélectrique |
| US8766090B2 (en) * | 2012-03-19 | 2014-07-01 | Rec Solar Pte. Ltd. | Method for metallization or metallization and interconnection of back contact solar cells |
| JP2015023234A (ja) * | 2013-07-23 | 2015-02-02 | パナソニック株式会社 | 光電変換素子およびその製造方法 |
-
2016
- 2016-02-26 JP JP2017504969A patent/JPWO2016143547A1/ja active Pending
- 2016-02-26 WO PCT/JP2016/055764 patent/WO2016143547A1/fr active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009096539A1 (fr) * | 2008-01-30 | 2009-08-06 | Kyocera Corporation | Élément de batterie solaire et procédé de fabrication d'élément de batterie solaire |
| JP2013125853A (ja) * | 2011-12-14 | 2013-06-24 | Hitachi Plant Technologies Ltd | 太陽電池モジュールの製造方法および製造装置 |
| JP2013058808A (ja) * | 2012-12-25 | 2013-03-28 | Sharp Corp | 太陽電池および太陽電池の製造方法 |
| JP2014199859A (ja) * | 2013-03-29 | 2014-10-23 | 大日本印刷株式会社 | 太陽電池モジュール用集電シートの製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2016143547A1 (ja) | 2017-12-21 |
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