WO2016119534A1 - Poly-compound semiconductor light-emitting component with doped multilayer quantum wells - Google Patents

Poly-compound semiconductor light-emitting component with doped multilayer quantum wells Download PDF

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WO2016119534A1
WO2016119534A1 PCT/CN2015/097538 CN2015097538W WO2016119534A1 WO 2016119534 A1 WO2016119534 A1 WO 2016119534A1 CN 2015097538 W CN2015097538 W CN 2015097538W WO 2016119534 A1 WO2016119534 A1 WO 2016119534A1
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layer
miscellaneous
quantum well
component
barrier layer
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PCT/CN2015/097538
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French (fr)
Chinese (zh)
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吴超瑜
蔡正文
陶青山
王笃祥
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天津三安光电有限公司
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Publication of WO2016119534A1 publication Critical patent/WO2016119534A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

Definitions

  • the present invention relates to the field of semiconductor light emitting devices, and more particularly to a multilayer quantum well multi-component semiconductor high efficiency light emitting device with doping.
  • Semiconductor light-emitting diodes have long life, low power consumption, and high reliability, and are widely recognized in many fields of production and life.
  • the quantum well structure part of the light-emitting diode is mainly the structural design of the multiple quantum well, and the quantum well in the high temperature environment causes the wavelength red shift and the brightness attenuation due to the material itself, which limits the application range of the diode, To expand the range of diodes, it is necessary to develop a semiconductor light-emitting component that can maintain high efficiency at high temperatures.
  • the problem to be solved by the present invention is a multi-layer quantum well multi-component semiconductor high-efficiency light-emitting component with a doping which reduces the problem of brightness decay and wavelength variation of the germanium at high temperatures.
  • the technical solution adopted by the present invention is: a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting component, comprising an active region, the active region including a miscellaneous a multi-layer quantum well multi-component semiconductor structure, and the multi-layer quantum well multi-component semiconductor structure has at least one quantum well layer, wherein all or part of the barrier layer is cumbersome, and the well layer is not miscellaneous;
  • the impurity layer concentration is 8 ⁇ 10 16 2 ⁇ 1 017 atomic centimeters
  • the thickness of the well layer is 120-170 angstroms
  • the thickness of the barrier layer is 140-190 angstroms
  • the miscellaneous form is P-type miscellaneous or N. The type is uncomfortable.
  • the P type miscellaneous impurity element is Mg or Zn
  • the N type miscellaneous miscellaneous element is Si or T e°
  • the barrier layer near the N-type confinement layer or near the P-type confinement layer or the barrier layer in the center of the active region is cumbersome, and the total miscellaneous logarithm ⁇ 1/3 of the total number of sub-log pairs.
  • the portion of the barrier layer located in the intermediate region is cumbersome, and the thickness of the barrier layer is 1/2 to 1/3 of the thickness of the barrier layer.
  • the advantages and positive effects of the present invention are:
  • the structure of the present invention has a better luminance output and a lower voltage on a large chip size. At high ambient or high temperatures, the red shift of the wavelength and the attenuation of the brightness due to the material itself are reduced.
  • FIG. 1 is a schematic view showing the structure of a multilayer quantum well according to Embodiment 1 of the present invention.
  • FIG. 2 is a schematic view showing the structure of a multilayer quantum well according to Embodiment 2 of the present invention.
  • Embodiment 3 is a schematic structural view of a multilayer quantum well of Embodiment 3 of the present invention.
  • Embodiment 4 is a schematic structural view of a multilayer quantum well of Embodiment 4 of the present invention.
  • FIG. 5 is a schematic diagram of a multilayer quantum well structure in which a barrier layer is not cumbersome
  • FIG. 6 is a schematic view showing the structure of the barrier layer in the middle region
  • a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a doped multi-layer quantum well multi-component compound Semiconductor structure
  • the multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers;
  • the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material It is (Al.. 12 Ga.. 88 ) InP, in which all the barrier layers are cumbersome, that is, there is a complicated barrier layer 150, and the well layer 140 is not cumbersome;
  • the miscellaneous barrier layer 150 has a viscous concentration of 1.5 ⁇ 10 17 atoms/cm, and the well layer 140 has a thickness of 140 angstroms, and the barrier layer has a thickness of 180 angstroms.
  • the miscellaneous form is P-type miscellaneous or N-type exotic. miscellaneous.
  • the P type miscellaneous miscellaneous element is Z n, the miscellaneous element of the N type is Te.
  • a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a multi-layer quantum well multi-component compound with a miscellaneous Semiconductor structure
  • the multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material It is (Al.. 12 Ga.. 88 ) InP, in which part of the barrier layer is cumbersome, the well layer is not cumbersome; the miscellaneous area is the barrier layer close to the N-type confinement layer, and the total miscellaneous logarithm is four.
  • the miscellaneous barrier layer 150 has a doping concentration of 1.5 ⁇ 10 “atoms/cm, and the well layer 140 has a thickness of 140 angstroms, and the miscellaneous barrier layer 150 and the non-heavy barrier layer 160 have a thickness of 180.
  • the miscellaneous form is P-type miscellaneous or N-type miscellaneous.
  • the P-type miscellaneous miscellaneous element is Zn, and the N-type miscellaneous miscellaneous element is Te.
  • a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a doped multi-layer quantum well multi-component compound Semiconductor structure
  • the multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material It is (Al 0 . 12 Ga.. 88 )InP, in which all the barrier layers are cumbersome, and the well layer 140 is not cumbersome; but the portion of each barrier layer located in the middle region is cumbersome
  • the thickness of the miscellaneous region 190 is the thickness of the 1/3 barrier layer.
  • the doped barrier layer 150 has a concentration of 1.5 ⁇ 10 17 atoms/cm, and the well layer 140 has a thickness of 140 angstroms, and the barrier layer has a thickness of 180 angstroms.
  • the miscellaneous form is P-type miscellaneous or N-type miscellaneous.
  • the miscellaneous element of the P type is Zn, and the miscellaneous element of the N type is Te.
  • a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a doped multi-layer quantum well multi-component compound Semiconductor structure
  • the multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material For (Al.. 12 Ga.. 88 ) InP, Some of the barrier layers are cumbersome, and the well layer 140 is not cumbersome; the miscellaneous region is a barrier layer close to the N-type confinement layer, and the total miscellaneous logarithm is four. The portion of the barrier layer 150 located in the middle portion is cumbersome. As shown in Fig. 6, the thickness of the miscellaneous region 9 is the thickness of the 1/3 barrier layer.
  • the cumbersome barrier layer 150 has a viscous concentration of 1.5 x 10" atoms/cm, and the well layer 140 has a thickness of 140 angstroms and a barrier layer thickness of 180 angstroms.
  • the miscellaneous form is P-type miscellaneous or N-type miscellaneous.
  • the miscellaneous element of the P type is Zn
  • the miscellaneous element of the N type is Te.
  • a complex multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly comprising an active region 100 comprising a doped multi-layer quantum well multi-component semiconductor structure,
  • the multi-component compound is aluminum gallium indium phosphide, and the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers;
  • the barrier layer material is ⁇ 1. . 7 0&. . 3 ?
  • the well layer 140 is made of ⁇ 1. . 12 0&. 88 ), wherein the barrier layer and the well layer 140 are not cumbersome, and the well layer 140 has a thickness of 140 angstroms and the barrier layer has a thickness of 180 angstroms.
  • the structure of the present invention has better brightness output than the structure of the control group, about 30% increase, and the voltage is lower 0.03V;
  • the structure of the present invention has a brightness decay of 10% less than that of the control group at a high ambient temperature, and the wavelength red shift phenomenon is 1.2 nm less than that of the control group.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

Provided is a poly-compound semiconductor high-efficiency light-emitting component with doped multilayer quantum wells, comprising an active region (100), the active region (100) comprising a poly-compound semiconductor structure with doped multilayer quantum wells, the poly-compound semiconductor structure with multilayer quantum wells having at least one quantum well layer, all or some barrier layers (150) being doped, and well layers (140) not being doped, and the poly-compound being aluminium gallium indium phosphide. Thus, with a large-sized chip, the brightness output is better, and the voltage is also relatively low. Under a high environmental temperature or high-temperature state, wavelength red shift and brightness decay caused by the materials themselves are both reduced.

Description

说明书 发明名称：带有参杂的多层量子阱多元化合物半导体发光组件 技术领域  Description: Inventive name: multi-layer quantum well multi-component semiconductor light-emitting device with doping
[0001] 本发明涉及半导体发光组件技术领域， 尤其是涉及带有参杂的多层量子阱多元 化合物半导体高效率发光组件。  [0001] The present invention relates to the field of semiconductor light emitting devices, and more particularly to a multilayer quantum well multi-component semiconductor high efficiency light emitting device with doping.
背景技术  Background technique
[0002] 半导体发光二极管光源寿命长、 功耗低、 可靠性好， 在生产和生活的许多领域 得到了普遍的认可， 用途广泛。 目前， 发光二级管的量子阱结构部分主要是多 量子阱的结构设计， 而量子阱在高温环境下， 因材料本身会造成波长红移以及 亮度衰减， 这就限制了二极管的适用范围， 为了扩大二极管的适用范围， 有必 要研发一种在高温下， 能保持较高效率的半导体发光组件。  [0002] Semiconductor light-emitting diodes have long life, low power consumption, and high reliability, and are widely recognized in many fields of production and life. At present, the quantum well structure part of the light-emitting diode is mainly the structural design of the multiple quantum well, and the quantum well in the high temperature environment causes the wavelength red shift and the brightness attenuation due to the material itself, which limits the application range of the diode, To expand the range of diodes, it is necessary to develop a semiconductor light-emitting component that can maintain high efficiency at high temperatures.
技术问题  technical problem
[0003] 本发明要解决的问题是一种带有参杂的多层量子阱多元化合物半导体高效率发 光组件， 该组件降低了在高温下作业吋的亮度衰减以及波长变化的问题。  The problem to be solved by the present invention is a multi-layer quantum well multi-component semiconductor high-efficiency light-emitting component with a doping which reduces the problem of brightness decay and wavelength variation of the germanium at high temperatures.
问题的解决方案  Problem solution
技术解决方案  Technical solution
[0004] 为解决上述技术问题， 本发明采用的技术方案是： 带有惨杂的多层量子阱多元 化合物半导体高效率发光组件， 包括有源区， 所述有源区包括带有惨杂的多层 量子阱多元化合物半导体结构， 且所述多层量子阱多元化合物半导体结构具有 至少一个量子阱层， 其中全部或部分的垒层惨杂， 阱层不惨杂； 所述的多元化 合物为磷铝镓铟、 铝铟磷或镓铟磷中的一种。  [0004] In order to solve the above technical problem, the technical solution adopted by the present invention is: a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting component, comprising an active region, the active region including a miscellaneous a multi-layer quantum well multi-component semiconductor structure, and the multi-layer quantum well multi-component semiconductor structure has at least one quantum well layer, wherein all or part of the barrier layer is cumbersome, and the well layer is not miscellaneous; One of aluminum gallium indium, aluminum indium phosphorus or gallium indium phosphorus.
[0005] 优选的， 所述惨杂的垒层浓度为 8xl016~2xl017原子厘米， 且阱层厚度为 120~ 170埃， 垒层厚度为 140~190埃， 惨杂形态为 P型惨杂或 N型惨杂。  [0005] Preferably, the impurity layer concentration is 8×10 16 2×1 017 atomic centimeters, and the thickness of the well layer is 120-170 angstroms, the thickness of the barrier layer is 140-190 angstroms, and the miscellaneous form is P-type miscellaneous or N. The type is miserable.
[0006] 优选的， 所述 P型惨杂的惨杂元素为 Mg或 Zn， 所述 N型惨杂的惨杂元素为 Si或 T e°  [0006] Preferably, the P type miscellaneous impurity element is Mg or Zn, and the N type miscellaneous miscellaneous element is Si or T e°
[0007] 优选的， 靠近 N型限制层或靠近 P型限制层的垒层或在有源区中央的垒层惨杂 ， 总惨杂对数≤ 1/3总量子井对数。 [0008] 优选的， 所述垒层内位于中间区域的部分惨杂， 惨杂厚度为 1/2~1/3垒层的厚度 发明的有益效果 [0007] Preferably, the barrier layer near the N-type confinement layer or near the P-type confinement layer or the barrier layer in the center of the active region is cumbersome, and the total miscellaneous logarithm ≤ 1/3 of the total number of sub-log pairs. [0008] Preferably, the portion of the barrier layer located in the intermediate region is cumbersome, and the thickness of the barrier layer is 1/2 to 1/3 of the thickness of the barrier layer.
有益效果  Beneficial effect
[0009] 本发明具有的优点和积极效果是： 在大芯片尺寸上本发明结构具有较佳的亮度 输出并且电压也较低。 在高环境温度或高温状态下， 因材料本身所造成的波长 红移以及亮度衰减均有所降低。  The advantages and positive effects of the present invention are: The structure of the present invention has a better luminance output and a lower voltage on a large chip size. At high ambient or high temperatures, the red shift of the wavelength and the attenuation of the brightness due to the material itself are reduced.
对附图的简要说明  Brief description of the drawing
附图说明  DRAWINGS
[0010] 图 1是本发明中实施例一的多层量子阱结构示意图；  1 is a schematic view showing the structure of a multilayer quantum well according to Embodiment 1 of the present invention;
[0011] 图 2是本发明中实施例二的多层量子阱结构示意图； 2 is a schematic view showing the structure of a multilayer quantum well according to Embodiment 2 of the present invention;
[0012] 图 3是本发明中实施例三的多层量子阱结构示意图； 3 is a schematic structural view of a multilayer quantum well of Embodiment 3 of the present invention;
[0013] 图 4是本发明中实施例四的多层量子阱结构示意图； 4 is a schematic structural view of a multilayer quantum well of Embodiment 4 of the present invention;
[0014] 图 5是垒层未惨杂的多层量子阱结构示意图； 5 is a schematic diagram of a multilayer quantum well structure in which a barrier layer is not cumbersome;
[0015] 图 6是中间区域惨杂的垒层结构示意图； [0015] FIG. 6 is a schematic view showing the structure of the barrier layer in the middle region;
[0016] 图中： 100、 有源区； 140、 阱层； 150、 有惨杂的垒层； 160、 非惨杂的垒层； 170、 P型限制层； 180、 N型限制层； 190、 惨杂区。  [0016] In the figure: 100, active region; 140, well layer; 150, miscellaneous barrier layer; 160, non-miscellaneous barrier layer; 170, P-type confinement layer; 180, N-type confinement layer; Miserable area.
实施该发明的最佳实施例  BEST MODE FOR CARRYING OUT THE INVENTION
本发明的最佳实施方式  BEST MODE FOR CARRYING OUT THE INVENTION
[0017] 实施例一 [0017] Embodiment 1
[0018] 如图 1所示， 带有惨杂的多层量子阱多元化合物半导体高效率发光组件， 包括 有源区 100， 所述有源区 100包括带有惨杂的多层量子阱多元化合物半导体结构 [0018] As shown in FIG. 1, a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a doped multi-layer quantum well multi-component compound Semiconductor structure
， 所述的多元化合物为磷化铝镓铟， 所述多层量子阱多元化合物半导体结构具 有 12个量子阱层； 垒层材料为 (Al 0.7Ga。.3)InP， 阱层 140材料为 (Al。.12Ga。.88)InP， 其中全部垒层均惨杂即有惨杂的垒层 150， 阱层 140不惨杂； The multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material It is (Al.. 12 Ga.. 88 ) InP, in which all the barrier layers are cumbersome, that is, there is a complicated barrier layer 150, and the well layer 140 is not cumbersome;
[0019] 所述惨杂的垒层 150惨杂浓度为 1.5x10 17原子 /厘米， 且阱层 140厚度为 140埃， 垒层厚度为 180埃， 惨杂形态为 P型惨杂或 N型惨杂。 所述 P型惨杂的惨杂元素为 Z n， 所述 N型惨杂的惨杂元素为 Te。 [0019] The miscellaneous barrier layer 150 has a viscous concentration of 1.5× 10 17 atoms/cm, and the well layer 140 has a thickness of 140 angstroms, and the barrier layer has a thickness of 180 angstroms. The miscellaneous form is P-type miscellaneous or N-type miserable. miscellaneous. The P type miscellaneous miscellaneous element is Z n, the miscellaneous element of the N type is Te.
本发明的实施方式 Embodiments of the invention
[0020] 实施例二 [0020] Embodiment 2
[0021] 如图 2所示， 带有惨杂的多层量子阱多元化合物半导体高效率发光组件， 包括 有源区 100， 所述有源区 100包括带有惨杂的多层量子阱多元化合物半导体结构 [0021] As shown in FIG. 2, a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a multi-layer quantum well multi-component compound with a miscellaneous Semiconductor structure
， 所述的多元化合物为磷化铝镓铟， 所述多层量子阱多元化合物半导体结构具 有 12个量子阱层； 垒层材料为 (Al 0.7Ga。.3)InP， 阱层 140材料为 (Al。.12Ga。.88)InP， 其中部分垒层惨杂， 阱层不惨杂； 惨杂区域为靠近 N型限制层的垒层， 总惨杂对 数为 4个。 The multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material It is (Al.. 12 Ga.. 88 ) InP, in which part of the barrier layer is cumbersome, the well layer is not cumbersome; the miscellaneous area is the barrier layer close to the N-type confinement layer, and the total miscellaneous logarithm is four.
[0022] 所述惨杂的垒层 150惨杂浓度为 1.5x10 "原子 /厘米， 且阱层 140厚度为 140埃， 惨杂的垒层 150以及非惨杂的垒层 160的厚度均为 180埃， 惨杂形态为 P型惨杂或 N 型惨杂。 所述 P型惨杂的惨杂元素为 Zn， 所述 N型惨杂的惨杂元素为 Te。  [0022] The miscellaneous barrier layer 150 has a doping concentration of 1.5×10 “atoms/cm, and the well layer 140 has a thickness of 140 angstroms, and the miscellaneous barrier layer 150 and the non-heavy barrier layer 160 have a thickness of 180. A, the miscellaneous form is P-type miscellaneous or N-type miscellaneous. The P-type miscellaneous miscellaneous element is Zn, and the N-type miscellaneous miscellaneous element is Te.
[0023] 实施例三  [0023] Embodiment 3
[0024] 如图 3所示， 带有惨杂的多层量子阱多元化合物半导体高效率发光组件， 包括 有源区 100， 所述有源区 100包括带有惨杂的多层量子阱多元化合物半导体结构 [0024] As shown in FIG. 3, a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a doped multi-layer quantum well multi-component compound Semiconductor structure
， 所述的多元化合物为磷化铝镓铟， 所述多层量子阱多元化合物半导体结构具 有 12个量子阱层； 垒层材料为 (Al 0.7Ga。.3)InP， 阱层 140材料为 (Al 0.12Ga。.88)InP， 其中全部垒层均惨杂， 阱层 140不惨杂； 但每个垒层内位于中间区域的部分惨杂The multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material It is (Al 0 . 12 Ga.. 88 )InP, in which all the barrier layers are cumbersome, and the well layer 140 is not cumbersome; but the portion of each barrier layer located in the middle region is cumbersome
， 如图 6所示， 且惨杂区 190的厚度为 1/3垒层的厚度。 As shown in Fig. 6, the thickness of the miscellaneous region 190 is the thickness of the 1/3 barrier layer.
[0025] 所述惨杂的垒层 150浓度为 1.5x10 17原子 /厘米， 且阱层 140厚度为 140埃， 垒层 厚度为 180埃， 惨杂形态为 P型惨杂或 N型惨杂。 所述 P型惨杂的惨杂元素为 Zn， 所述 N型惨杂的惨杂元素为 Te。 [0025] The doped barrier layer 150 has a concentration of 1.5× 10 17 atoms/cm, and the well layer 140 has a thickness of 140 angstroms, and the barrier layer has a thickness of 180 angstroms. The miscellaneous form is P-type miscellaneous or N-type miscellaneous. The miscellaneous element of the P type is Zn, and the miscellaneous element of the N type is Te.
[0026] 实施例四 Embodiment 4
[0027] 如图 4所示， 带有惨杂的多层量子阱多元化合物半导体高效率发光组件， 包括 有源区 100， 所述有源区 100包括带有惨杂的多层量子阱多元化合物半导体结构 [0027] As shown in FIG. 4, a complicated multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly includes an active region 100 including a doped multi-layer quantum well multi-component compound Semiconductor structure
， 所述的多元化合物为磷化铝镓铟， 所述多层量子阱多元化合物半导体结构具 有 12个量子阱层； 垒层材料为 (Al 0.7Ga。.3)InP， 阱层 140材料为 (Al。.12Ga。.88)InP， 其中部分垒层惨杂， 阱层 140不惨杂； 惨杂区域为靠近 N型限制层的垒层， 总惨 杂对数为 4个。 且惨杂的垒层 150内位于中间区域的部分惨杂， 如图 6所示， 惨杂 区 9的厚度为 1/3垒层的厚度。 所述惨杂的垒层 150的惨杂浓度为 1.5x10 "原子 /厘 米， 且阱层 140厚度为 140埃， 垒层厚度为 180埃， 惨杂形态为 P型惨杂或 N型惨杂 。 所述 P型惨杂的惨杂元素为 Zn， 所述 N型惨杂的惨杂元素为 Te。 The multi-component compound is aluminum gallium indium phosphide, the multi-layer quantum well multi-component semiconductor structure has 12 quantum well layers; the barrier layer material is (Al 0 . 7 Ga.. 3 ) InP, well layer 140 material For (Al.. 12 Ga.. 88 ) InP, Some of the barrier layers are cumbersome, and the well layer 140 is not cumbersome; the miscellaneous region is a barrier layer close to the N-type confinement layer, and the total miscellaneous logarithm is four. The portion of the barrier layer 150 located in the middle portion is cumbersome. As shown in Fig. 6, the thickness of the miscellaneous region 9 is the thickness of the 1/3 barrier layer. The cumbersome barrier layer 150 has a viscous concentration of 1.5 x 10" atoms/cm, and the well layer 140 has a thickness of 140 angstroms and a barrier layer thickness of 180 angstroms. The miscellaneous form is P-type miscellaneous or N-type miscellaneous. The miscellaneous element of the P type is Zn, and the miscellaneous element of the N type is Te.
[0028] 对照组 [0028] control group
[0029] 带有惨杂的多层量子阱多元化合物半导体高效率发光组件， 包括有源区 100， 所述有源区 100包括带有惨杂的多层量子阱多元化合物半导体结构， 所述的多元 化合物为磷化铝镓铟， 所述多层量子阱多元化合物半导体结构具有 12个量子阱 层； 垒层材料为^1。.70&。.3 ？， 阱层140材料为^1。.120&。.88) ?， 其中垒层与阱 层 140均不惨杂， 且阱层 140厚度为 140埃， 垒层厚度为 180埃。 [0029] a complex multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly comprising an active region 100 comprising a doped multi-layer quantum well multi-component semiconductor structure, The multi-component compound is aluminum gallium indium phosphide, and the multi-layer quantum well multi-component compound semiconductor structure has 12 quantum well layers; the barrier layer material is ^1. . 7 0&. . 3 ? The well layer 140 is made of ^1. . 12 0&. 88 ), wherein the barrier layer and the well layer 140 are not cumbersome, and the well layer 140 has a thickness of 140 angstroms and the barrier layer has a thickness of 180 angstroms.
[0030] 取具有实施例一〜实施例四以及对照组的多层量子阱半导体发光组件进行检测 ， 可以得出：  [0030] Taking the multilayer quantum well semiconductor light-emitting device having the first embodiment to the fourth embodiment and the control group for detection, it can be concluded that:
[0031] a. 大尺寸即 42mil下可以看出本发明的结构较对照组的结构有较好的亮度输 出， 约增加 30%， 并且电压较低 0.03V;  [0031] a large size, that is, 42 mil, it can be seen that the structure of the present invention has better brightness output than the structure of the control group, about 30% increase, and the voltage is lower 0.03V;
[0032] b. 在小尺寸即 12mil下可以看出本发明的结构在高环境温度下亮度衰减较较 对照组的结构少 10%， 并且波长红移现象较对照组少 1.2纳米。 [0032] b. Under the small size, that is, 12 mil, it can be seen that the structure of the present invention has a brightness decay of 10% less than that of the control group at a high ambient temperature, and the wavelength red shift phenomenon is 1.2 nm less than that of the control group.
[0033] 以上对本发明的实施例进行了详细说明， 但所述内容仅为本发明的较佳实施例[0033] The embodiments of the present invention have been described in detail above, but the content is only a preferred embodiment of the present invention.
， 不能被认为用于限定本发明的实施范围。 凡依本发明范围所作的均等变化与 改进等， 均应仍归属于本专利涵盖范围之内。 It should not be considered as limiting the scope of the invention. All changes and improvements made in accordance with the scope of the invention shall remain within the scope of this patent.

Claims

权利要求书 Claim
带有惨杂的多层量子阱多元化合物半导体高效率发光组件， 包括有源 区， 其特征在于： 所述有源区包括带有惨杂的多层量子阱多元化合物 半导体结构， 且所述多层量子阱多元化合物半导体结构具有至少一个 量子阱层， 其中全部或部分的垒层惨杂， 阱层不惨杂； 所述的多元化 合物为磷铝镓铟、 铝铟磷或镓铟磷中的一种。 a complex multi-layer quantum well multi-component semiconductor high-efficiency light-emitting component comprising an active region, characterized in that: the active region comprises a multi-layered quantum well multi-component compound semiconductor structure with a miscellaneous The quantum well-well multi-component semiconductor structure has at least one quantum well layer, wherein all or part of the barrier layer is cumbersome, and the well layer is not cumbersome; the multi-component compound is in the order of phosphorus aluminum gallium indium, aluminum indium phosphorus or gallium indium phosphorus One.
根据权利要求 1所述的带有惨杂的多层量子阱多元化合物半导体高效 率发光组件， 其特征在于： 所述惨杂的垒层浓度为 8xl016~2xl017原 子 /厘米， 且阱层厚度为 120~170埃， 垒层厚度为 140~190埃， 惨杂形 态为 P型惨杂或 N型惨杂。 The multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly according to claim 1, wherein the impurity layer concentration is 8 x 10 16 2 x 1 017 atoms/cm, and the well layer thickness is 120. ~170 angstroms, the thickness of the barrier layer is 140~190 angstroms, and the miscellaneous form is P-type miscellaneous or N-type miscellaneous.
根据权利要求 2所述的带有惨杂的多层量子阱多元化合物半导体高效 率发光组件， 其特征在于： 所述 P型惨杂的惨杂元素为 Mg或 Zn， 所述 N型惨杂的惨杂元素为 Si或 Te。 The multi-layer quantum well multi-component semiconductor high-efficiency light-emitting component according to claim 2, wherein: the P-type miscellaneous impurity element is Mg or Zn, and the N-type is miscellaneous The miscellaneous element is Si or Te.
根据权利要求 2或 3所述的带有惨杂的多层量子阱多元化合物半导体高 效率发光组件， 其特征在于： 靠近 N型限制层或靠近 P型限制层的垒 层或在有源区中央的垒层惨杂， 总惨杂对数≤ 1/3总量子井对数。 根据权利要求 1~4任一项所述的带有惨杂的多层量子阱多元化合物半 导体高效率发光组件， 其特征在于： 所述垒层内位于中间区域的部分 惨杂， 惨杂厚度为 1/2~1/3垒层的厚度。 A highly entangled multi-layer quantum well multi-component semiconductor high-efficiency light-emitting device according to claim 2 or 3, wherein: the barrier layer is adjacent to or close to the N-type confinement layer or in the center of the active region The barrier layer is cumbersome, and the total miscellaneous logarithm ≤ 1/3 of the total number of well logs. The multi-layer quantum well multi-component semiconductor high-efficiency light-emitting assembly according to any one of claims 1 to 4, wherein: the portion of the barrier layer located in the intermediate portion is cumbersome, and the thickness is The thickness of the 1/2~1/3 barrier layer.
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