WO2016119417A1 - 一种加速度计的z轴结构及其生产方法 - Google Patents

一种加速度计的z轴结构及其生产方法 Download PDF

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WO2016119417A1
WO2016119417A1 PCT/CN2015/084966 CN2015084966W WO2016119417A1 WO 2016119417 A1 WO2016119417 A1 WO 2016119417A1 CN 2015084966 W CN2015084966 W CN 2015084966W WO 2016119417 A1 WO2016119417 A1 WO 2016119417A1
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anchor point
fixed electrode
substrate
mass
intermediate anchor
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French (fr)
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郑国光
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Goertek Inc
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Goertek Inc
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Priority claimed from CN201510050310.9A external-priority patent/CN104569490B/zh
Priority claimed from CN201510050419.2A external-priority patent/CN104569491B/zh
Application filed by Goertek Inc filed Critical Goertek Inc
Priority to US15/546,824 priority Critical patent/US20170356929A1/en
Publication of WO2016119417A1 publication Critical patent/WO2016119417A1/zh
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass

Definitions

  • the present invention belongs to the field of microelectromechanical (MEMS), and more particularly to a microelectromechanical accelerometer, and more particularly to a Z-axis structure in an accelerometer; the invention also relates to a method of producing a Z-axis structure.
  • MEMS microelectromechanical
  • Z-axis accelerometers were all flat-plate capacitive, and the motion mode of the mass was a structure similar to a seesaw.
  • the mass 3 and the two fixed electrodes 2 form two capacitors C1 and C2, respectively.
  • the mass 3 is supported above the substrate by anchor points 4.
  • the Z-axis structure of this structure is sensitive to deformation caused by external stress and temperature changes.
  • the deformation caused by external stress and temperature changes first acts on the substrate 1 and then on the fixed electrode 2. Since the fixed electrode 2 is attached to the substrate 1, the deformation of the substrate 1 is directly reflected on the fixed electrode 2. Under normal circumstances, the deformations of the two fixed electrodes 2 may not be equal, and as a result, the capacitance of the two fixed electrodes 2 to the movable mass 3 is not equal without the accelerometer input, and finally the error signal is output. Reflected on the chip, this is the zero offset of the Z-axis accelerometer. From the designer's point of view, it is hoped that the zero offset will be as small as possible. However, the accelerometer of this structure, the zero offset caused by external stress and temperature changes is unavoidable.
  • a Z-axis structure of an accelerometer comprising a substrate, a fixed electrode, a mass, a first anchor point disposed on a surface of the substrate, the fixed electrode passing through The end is connected to the first anchor point, and the fixed electrode is suspended on the substrate by the first anchor point;
  • An intermediate anchor point is also provided on the surface of the substrate, the mass being suspended above the fixed electrode by an intermediate anchor point.
  • the fixed electrode is integrally formed with the first anchor point.
  • the first anchor point is adjacent to the intermediate anchor point.
  • the fixed electrode is made of a single crystal silicon or a polycrystalline silicon material.
  • a plurality of through holes are provided in the mass and the fixed electrode.
  • the lower surface of the fixed electrode is further provided with a reinforcing structure.
  • the invention also provides a method for producing a Z-axis structure, comprising the following steps:
  • the invention also provides a method for producing a Z-axis structure, comprising the following steps:
  • a first sacrificial layer is deposited on the substrate, and a region of the first anchor point and the first intermediate anchor point is etched on the first sacrificial layer;
  • the first sacrificial layer and the second sacrificial layer are removed to form a Z-axis structure.
  • the step b and the step c further comprise the step of planarizing the fixed electrode layer to a predetermined thickness.
  • the step f before the pattern of the mass is etched out of the mass and the second intermediate anchor, the step of planarizing the mass to a predetermined thickness is further included.
  • the fixed electrode is connected to the substrate through the first anchor point, so that there is a certain gap between the fixed electrode and the substrate, which cuts the deformation transmission channel of the substrate to the fixed electrode, and reduces the fixation.
  • the contact area between the electrode and the substrate can effectively prevent the deformation of the substrate due to external stress and temperature changes from being transmitted to the fixed electrode, which greatly reduces the zero drift of the Z-axis structure.
  • the inventors of the present invention have found that in the prior art, the deformation of the substrate due to external stress and temperature changes is transmitted to the fixed electrode, thereby causing deformation of the fixed electrode, so that the difference between the two capacitors is not equal. Therefore, the technical task to be achieved by the present invention or the technical problem to be solved is not thought of or expected by those skilled in the art, so the present invention is a new technical solution.
  • Figure 1 is a schematic illustration of a conventional Z-axis configuration.
  • Figure 2 is a schematic illustration of the Z-axis structure of the present invention.
  • FIG. 3 to 9 are schematic flow charts showing the production method of the Z-axis structure of Fig. 2.
  • Figure 10 is a schematic view showing the structure of another embodiment of the Z-axis structure of the present invention.
  • 11 to 18 are schematic flow charts showing the production method of the Z-axis structure of Fig. 10.
  • the accelerometer of the conventional structure adopts a translational mode in both the X-axis and the Y-axis direction, and the Z-axis adopts a seesaw-type deflection mode.
  • the present invention provides a Z in an accelerometer.
  • the shaft structure can be used to detect the Z-axis acceleration signal in the vertical direction.
  • the present invention provides a Z-axis structure of an accelerometer including a substrate 1, a mass 3, and further comprising two fixed electrodes 2, two firsts being provided on the surface of the substrate 1.
  • the anchor points 20 are respectively connected to the two fixed electrodes 2, and the fixed electrodes 2 are connected to the first anchor point 20 through the ends thereof.
  • the first anchor point 20 and the fixed electrode 2 may be integrally formed, and the whole is In the L shape, the fixed electrode 2 is located in the horizontal direction, and the first anchor point 20 is located in the vertical direction.
  • the fixed electrode 2 is disposed approximately parallel to the substrate 1, and due to the arrangement of the first anchor point 20, there is a certain gap between the fixed electrode 2 and the surface of the substrate 1, that is, the fixed electrode 2 passes through the first anchor point 20. Suspended on the substrate 1.
  • the fixed electrode 2 can be fixed by a single first anchor point 20. Of course, a plurality of anchor points can also be used for fixing.
  • an intermediate anchor point 4 Arranged between the two first anchor points 20 is an intermediate anchor point 4 which is fixed on the substrate 1 through which the mass 3 is suspended above the fixed electrode 2.
  • the measuring block 3 is connected to the intermediate anchor point 4 by an elastic beam, so that the mass 3 is elastically supported above the substrate 1 and the fixed electrode 2.
  • Two detection capacitors can be formed separately from the two fixed electrodes 2, which are common knowledge of those skilled in the art and will not be described herein.
  • the fixed electrode 2 is connected to the substrate 1 through the first anchor point 20 such that there is a certain gap between the fixed electrode 2 and the substrate 1, which deforms the substrate 1 to the fixed electrode 2
  • the channel is cut, the contact area of the fixed electrode 2 and the substrate 1 is reduced, and the deformation of the substrate due to external stress and temperature change can be effectively prevented from being transmitted to the fixed electrode, which greatly reduces the zero drift of the Z-axis structure.
  • the first anchor point 20 is adjacent to the intermediate anchor point 4.
  • the two first anchor points 20 are symmetrically distributed on both sides of the intermediate anchor point 4, so that the first anchor point 20 is as close as possible to the intermediate anchor point 4 without affecting the acceleration performance, so as to greatly reduce external stress and temperature.
  • the capacitance output deviation caused by the change is not limited to the Z-axis structure of the present invention.
  • the fixed electrode 2 is made of a single crystal silicon material to improve the deformation resistance of the fixed electrode 2.
  • the thickness of the fixed electrode 2 is preferably 10 ⁇ m or more. Further, it is between 20 ⁇ m and 30 ⁇ m.
  • a reinforcing structure such as a mesh-like rib structure may be provided on the lower surface of the fixed electrode 2.
  • the present invention also provides a method of producing a Z-axis structure, comprising the steps of:
  • the fixed electrode 2 is pressed onto the substrate 1 by the first anchor point 20 and the first intermediate anchor point 21; that is, the free ends of the first anchor point 20 and the first intermediate anchor point 21 are pressed against the lining.
  • the press-bonding between them may be carried out by means of bonding, such as silicon-silicon bonding, silicon-silicon dioxide bonding or alloy bonding, with reference to FIG.
  • the pressure between the two The bonding may be carried out by means of bonding, such as silicon-silicon bonding, silicon-silicon dioxide bonding or alloy bonding. Since the first intermediate anchor point 21 is higher than the surface of the fixed electrode 2, there is a certain gap between the mass 3 and the fixed electrode 2 which are pressed on the first intermediate anchor point 21, refer to FIG.
  • the intermediate anchor point 4 of the present invention includes a first intermediate anchor point 21 and a second intermediate anchor point 31 that are pressed together, wherein the first intermediate anchor point 21 is etched from the fixed electrode 2, and The second intermediate anchor point 31 is etched from the mass 3.
  • the first intermediate anchor point 21 and the second intermediate anchor point 31, which are pressed together, constitute an intermediate anchor point 4 for supporting the mass 3 above the substrate 1, the fixed electrode 2, with reference to FIG.
  • the second intermediate anchor point 31 and the connecting beam are etched out over the entire mass 3 such that the mass 3 is elastically supported above the substrate 1.
  • a step of etching and thinning the fixed electrode 2 is further included between the step b and the step c.
  • a step of etching and thinning the mass 3 is further included. In order to avoid the damage caused by the etching and thinning of the fixed electrode 2 and the mass 3 under the unsupported structure.
  • the production method of the present invention further includes the step of press-fitting the outer casing 5 on the substrate 1, thereby encapsulating the components in the outer casing 5, with reference to FIG.
  • the present invention provides a Z-axis structure of an accelerometer including a substrate 1a, a mass 3a, and further comprising two fixed electrodes 2a, two of which are provided on the surface of the substrate 1a
  • the first anchor point 20a is connected to the two fixed electrodes 2a, and the fixed electrode 2a is connected to the first anchor point 20a through the end thereof.
  • the first anchor point 20a and the fixed electrode 2a may be an integrally formed structure. The whole is L-shaped, the fixed electrode 2a is located in the horizontal direction, and the first anchor point 20a is located in the vertical direction.
  • the fixed electrode 2a is disposed approximately parallel to the substrate 1a.
  • the fixed electrode 2a can be fixed by a single first anchor point 20a. Of course, a plurality of anchor points can also be used for fixing.
  • An intermediate anchor point 4a is provided between the two first anchor points 20a, and the intermediate anchor point 4a is fixed on the surface of the substrate 1a, and the mass 3a is elastically suspended by the intermediate anchor point 4a on the fixed electrode 2a.
  • the mass 3a is connected to the intermediate anchor point 4a via the elastic beam, so that the mass 3a is elastically supported above the substrate 1a and the fixed electrode 2a.
  • there is a certain gap between the mass 3a and the fixed electrode 2a so that the mass is 3a can form two detection capacitors with the two fixed electrodes 2a, which are common knowledge of those skilled in the art, and will not be further described herein.
  • a plurality of through holes 6a are provided in the mass 3a and the fixed electrode 2a, which facilitates the release of the structure of the fixed electrode and the movable mass.
  • the fixed electrode 2a is connected to the substrate 1a through the first anchor point 20a such that there is a certain gap between the fixed electrode 2a and the substrate 1a, which causes the deformation of the substrate 1a to the fixed electrode 2a.
  • the channel is cut off, the contact area of the fixed electrode 2a and the substrate 1a is reduced, and the deformation of the substrate due to external stress and temperature change can be effectively prevented from being transmitted to the fixed electrode, which greatly reduces the zero drift of the Z-axis structure.
  • the first anchor point 20a is adjacent to the intermediate anchor point 4a.
  • the two first anchor points 20a are symmetrically distributed on both sides of the intermediate anchor point 4a, so that the first anchor point 20a is as close as possible to the intermediate anchor point 4a without affecting the acceleration performance, so as to be greatly lower due to external stress, The difference in capacitance due to temperature changes.
  • the fixed electrode 2a is made of a single crystal silicon material to improve the deformation resistance of the fixed electrode 2a.
  • the thickness of the fixed electrode 2a is preferably 5 ⁇ m or more. Of course, if the process capability can be achieved, the fixed electrode 2a can be made 5 ⁇ m or less.
  • a reinforcing structure such as a mesh-like rib structure may be provided on the lower surface of the fixed electrode 2a.
  • the present invention also provides a method of producing a Z-axis structure comprising the following steps:
  • a first sacrificial layer 7a is deposited on the substrate 1a, and the first sacrificial layer 7a may be a silicon oxide material. And etching a region of the first anchor point and the first intermediate anchor point on the first sacrificial layer 7a; specifically, according to the shape of the first anchor point and the first intermediate anchor point, for example, two first anchors The points need to be symmetrically distributed on both sides of the first intermediate anchor point. Therefore, corresponding etching regions should also be formed on the first sacrificial layer 7a, refer to FIG.
  • the fixed electrode layer a includes a fixed electrode directly above the first sacrificial layer 7a, and The first anchor point 20a and the first intermediate anchor point 21a are located in the first anchor point, the first intermediate anchor point area. Since the first sacrificial layer 7a of the region has been etched away, the first anchor point 20a and the first intermediate anchor point 21a are directly deposited on the substrate 1a, and the first anchor point 20a and the first intermediate anchor point are realized. 21a is connected to the substrate 1a.
  • the fixed electrode layer a may be a polysilicon material in order to increase the strength of the fixed electrode layer.
  • the deposition thickness of the fixed electrode layer may be greater than a predetermined thickness, and then planarization processing is performed, that is, The deposited fixed electrode layer is etched and thinned, and then step c is performed.
  • the pattern of the fixed electrode 2a and the first intermediate anchor point 21a is etched on the fixed electrode layer a, and a plurality of through holes 6a are etched on the fixed electrode 2a. That is, the fixed electrode 2a is separated from the first intermediate anchor point 21a, and the fixed electrode 2a is connected to the substrate through the first anchor point 20a, with reference to FIG.
  • the deposition thickness of the second sacrificial layer 8a may be greater than a predetermined thickness, and then planarization processing is performed, that is, the second sacrificial layer 8a is etched and thinned, and then step e is performed.
  • the deposition thickness of the mass layer may be greater than a predetermined thickness, and then planarization processing, that is, after deposition The mass layer is etched and thinned, and then a subsequent etching process is performed.
  • a pattern of the mass 3a and the second intermediate anchor 31a is etched on the mass layer, wherein the second intermediate anchor point 31a is located directly above the first intermediate anchor point 21a; and a plurality of etched on the mass 3a Through hole 6a, refer to FIG. That is, the mass 3a and the second intermediate anchor 31a are etched out on the mass layer such that the mass 3a and the second intermediate anchor 31a are connected together only by the elastic beams, and finally.
  • the intermediate anchor point 4a of the present invention includes a first intermediate anchor point 21a and a second intermediate anchor point 31a deposited together, wherein the first intermediate anchor point 21a is etched from the fixed electrode layer, and The second intermediate anchor point 31a is etched from the mass layer.
  • the first intermediate anchor point 21a and the second intermediate anchor point 31a deposited together constitute an intermediate anchor point 4a for supporting the mass 3a above the substrate 1a and the fixed electrode 2a.
  • the first sacrificial layer 7a and the second sacrificial layer 8a are removed to form the Z-axis structure of the present invention, with reference to FIG.
  • the first sacrificial layer and the second sacrificial layer 8a may be etched away by the HF solution or the gaseous HF, which is common knowledge of those skilled in the art and will not be described herein.
  • the corrosion of the first sacrificial layer 7a and the second sacrificial layer 8a can be accelerated, and the mass 3a and the fixed electrode 2a can be quickly released.
  • the production method of the present invention further includes the step of pressing the outer casing 5a on the substrate 1a, thereby encapsulating the components in the outer casing 5a, see Fig. 18.
  • the first sacrificial layer 7a in the step a, the second sacrificial layer 8a in the step d, is not limited to the silicon oxide material, and an organic material such as polyimide (PI) may also be used.
  • PI polyimide
  • the internal stress can be increased by adjusting the process parameters; and in the deposition process of the mass layer, the internal stress of the film can be reduced by adjusting the process parameters.

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Abstract

公开了一种加速度计的Z轴结构，包括衬底（1、1a）、固定电极（2、2a）、质量块（3、3a），在所述衬底（1、1a）的表面上设置有第一锚点（20、20a），所述固定电极（2、2a）通过其端部连接在第一锚点（20、20a）上，所述固定电极（2、2a）通过第一锚点（20、20a）悬置在衬底（1、1a）上；在所述衬底（1、1a）的表面上还设置有中间锚点（4、4a），所述质量块（3、3a）通过中间锚点（4、4a）悬置在固定电极（2、2a）的上方。还公开了一种Z轴结构的生产方法。该Z轴结构，固定电极（2、2a）通过第一锚点（20、20a）与衬底（1、1a）连接，使得固定电极（2、2a）与衬底（1、1a）之间具有一定的间隙，这就将衬底（1、1a）到固定电极（2、2a）的形变传输通道切断，减小了固定电极（2、2a）与衬底（1、1a）之间的接触面积，可以有效避免由于外界应力和温度变化引起的衬底（1、1a）的形变传到固定电极（2、2a）上，大大降低了Z轴结构的零点漂移。

Description

一种加速度计的Z轴结构及其生产方法 技术领域
本发明属于微机电(MEMS)领域，更准确地说，涉及一种微机电的加速度计，尤其涉及一种加速度计中的Z轴结构；本发明还涉及到Z轴结构的生产方法。
背景技术
以往的Z轴加速度计都是平板电容式的，质量块的运动模式是类似跷跷板的结构。参考图1，在质量块3下方的衬底1上，会有金属做的两块固定电极2，该固定电极2贴附在衬底1的表面上。质量块3与两块固定电极2分别形成两个电容C1、C2。其中，质量块3通过锚点4支撑在衬底的上方。
这种结构的Z轴结构，其对外界应力、温度变化所引起的形变比较敏感。外界应力和温度变化引起的形变首先作用在衬底1上，进而传到固定电极2上。由于固定电极2是附着在衬底1上面，衬底1的形变直接反映到固定电极2上面。正常情况下，两个固定电极2产生的形变不可能相等，结果就造成在没有加速度计输入的情况下，两个固定电极2对可动质量块3的电容不相等，最终会输出误差信号，反映到芯片上面，这就是Z轴加速度计的零点偏移。而从设计者的角度，希望零点偏移越小越好。但这种结构的加速度计，外界应力和温度变化引起的零点偏移是无法避免的。
发明内容
本发明的一个目的是提供一种加速度计的Z轴结构的新技术方案。
根据本发明的第一方面，提供了一种加速度计的Z轴结构，包括衬底、固定电极、质量块，在所述衬底的表面上设置有第一锚点，所述固定电极通过其端部连接在第一锚点上，所述固定电极通过第一锚点悬置在衬底上； 在所述衬底的表面上还设置有中间锚点，所述质量块通过中间锚点悬置在固定电极的上方。
优选地，所述固定电极与第一锚点一体成型。
优选地，所述第一锚点邻近中间锚点。
优选地，所述固定电极采用单晶硅或多晶硅材料制成。
优选地，在所述质量块、固定电极上设置有多个通孔。
优选地，所述固定电极的下表面还设置有加强结构。
本发明还提供了一种Z轴结构的生产方法，包括以下步骤：
a、在固定电极的下表面上刻蚀出两个第一锚点以及位于两个第一锚点之间的第一中间锚点；
b、通过第一锚点、第一中间锚点将固定电极压合在衬底上；
c、在固定电极上表面上除了第一中间锚点的位置进行刻蚀，使得第一中间锚点高于固定电极上表面的其它位置；
d、将固定电极上第一锚点与第一中间锚点之间的位置刻蚀掉，使第一中间锚点和固定电极分开；并将固定电极刻蚀成预定的尺寸；
e、在所述第一中间锚点的上端压合质量块；
f、在所述质量块上刻蚀出位于第一中间锚点上方的第二中间锚点以及用于连接质量块和第二中间锚点的连接梁。
本发明还提供了一种Z轴结构的生产方法，包括以下步骤：
a、在衬底上沉积第一牺牲层，并在该第一牺牲层上刻蚀出第一锚点、第一中间锚点的区域；
b、在第一牺牲层上以及第一锚点、第一中间锚点的区域沉积固定电极层；
c、在固定电极层上刻蚀出与第一锚点连接的固定电极以及第一中间锚点的图案，并在固定电极上刻蚀出多个通孔；
d、在固定电极上以及第一中间锚点的区域沉积第二牺牲层；
e、将位于第一中间锚点正上方的第二牺牲层刻蚀掉；
f、在第二牺牲层上方沉积质量块层，并在质量块层上刻蚀出质量块、第二中间锚点的图案，其中第二中间锚点位于第一中间锚点的正上方；并 在质量块上刻蚀出多个通孔；
g、去掉第一牺牲层、第二牺牲层，形成Z轴结构。
优选地，在所述步骤b、步骤c之间还包括将固定电极层平整化成预定厚度的步骤。
优选地，所述步骤f中，在将质量块层刻蚀出质量块、第二中间锚点的图案之前，还包括将质量块层平整化成预定厚度的步骤。
本发明的Z轴结构，固定电极通过第一锚点与衬底连接，使得固定电极与衬底之间具有一定的间隙，这就将衬底到固定电极的形变传输通道切断，减小了固定电极与衬底之间的接触面积，可以有效避免由于外界应力和温度变化引起的衬底的形变传到固定电极上，大大降低了Z轴结构的零点漂移。
本发明的发明人发现，在现有技术中，由于外界应力、温度变化所带来的衬底形变会传到固定电极上，从而引起固定电极的形变，使得两个电容的差值不相等。因此，本发明所要实现的技术任务或者所要解决的技术问题是本领域技术人员从未想到的或者没有预期到的，故本发明是一种新的技术方案。
通过以下参照附图对本发明的示例性实施例的详细描述，本发明的其它特征及其优点将会变得清楚。
附图说明
被结合在说明书中并构成说明书的一部分的附图示出了本发明的实施例，并且连同其说明一起用于解释本发明的原理。
图1是传统Z轴结构的示意图。
图2是本发明Z轴结构的示意图。
图3至图9是图2中Z轴结构生产方法的流程示意图。
图10是本发明Z轴结构另一实施方式的结构示意图。
图11至图18是图10中Z轴结构生产方法的流程示意图。
具体实施方式
现在将参照附图来详细描述本发明的各种示例性实施例。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、数字表达式和数值不限制本发明的范围。
以下对至少一个示例性实施例的描述实际上仅仅是说明性的，决不作为对本发明及其应用或使用的任何限制。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
在这里示出和讨论的所有例子中，任何具体值应被解释为仅仅是示例性的，而不是作为限制。因此，示例性实施例的其它例子可以具有不同的值。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步讨论。
传统结构的加速度计，其X轴、Y轴方向均采用平动方式，而Z轴均采用跷跷板式的偏转方式，相对于传统Z轴加速度计结构，本发明提供了一种加速度计中的Z轴结构，可以用来检测垂直方向上的Z轴加速度信号。
实施例1
参考图2，本发明提供了一种加速度计的Z轴结构，其包括衬底1、质量块3，还包括两个固定电极2，在所述衬底1的表面上设置有两个第一锚点20，分别用于连接两个固定电极2，所述固定电极2通过其端部连接在第一锚点20上，该第一锚点20与固定电极2可以是一体成型结构，整体呈L形，固定电极2位于水平方向上，而第一锚点20位于垂直方向上。固定电极2与衬底1近似平行设置，由于第一锚点20的设置，使得固定电极2与衬底1的表面之间具有一定的间隙，也就是说，固定电极2通过第一锚点20悬置在衬底1上。固定电极2可以通过单个第一锚点20进行固定，当然，也可以采用多个锚点进行固定。
在两个第一锚点20之间设置有中间锚点4，该中间锚点4固定在衬底1上，所述质量块3通过该中间锚点4悬置在固定电极2的上方。例如质 量块3通过弹性梁与中间锚点4连接，使得质量块3弹性支承在衬底1、固定电极2的上方，当然，质量块3与固定电极2之间具有一定的间隙，使得质量块3可与两个固定电极2分别构成两个检测电容，这属于本领域技术人员的公知常识，在此不再进行赘述。
本发明的Z轴结构，固定电极2通过第一锚点20与衬底1连接，使得固定电极2与衬底1之间具有一定的间隙，这就将衬底1到固定电极2的形变传输通道切断，减小了固定电极2与衬底1的接触面积，可以有效地避免由于外界应力和温度变化引起的衬底的形变传到固定电极上，大大降低了Z轴结构的零点漂移。
本发明的Z轴结构中，所述第一锚点20邻近中间锚点4。两个第一锚点20对称分布在中间锚点4的两侧，在不影响加速度性能的前提下，使得第一锚点20尽可能地靠近中间锚点4，以便大大降低由于外界应力、温度变化所带来的电容输出偏差。
进一步地，所述固定电极2采用单晶硅材料制成，以提高固定电极2的抗形变能力。所述固定电极2的厚度优选在10μm以上。更进一步地，在20μm-30μm之间。为了进一步保证固定电极2的强度，可以在固定电极2的下表面设置有加强结构，例如网状的加强筋结构。
参考图3至图9，本发明还提供了一种Z轴结构的生产方法，包括以下步骤：
a、在固定电极2的下表面上刻蚀出两个第一锚点20以及位于两个第一锚点20之间的第一中间锚点21；其中，两个第一锚点20对称分布在第一中间锚点21的两侧，并尽可能地靠近第一中间锚点21。三个锚点之间具有间隙，参考图3。
b、通过第一锚点20、第一中间锚点21将固定电极2压合在衬底1上；也就是说，第一锚点20、第一中间锚点21的自由端压合在衬底1上，它们之间的压合可以采用键合的方式，例如硅-硅键合、硅-二氧化硅键合或合金键合的方式，参考图4。
c、将固定电极2上表面上除了第一中间锚点21的位置进行刻蚀，使得第一中间锚点21高于固定电极2上表面的其它位置；也可以理解为在固 定电极2的上表面上将第一中间锚点21的上端刻蚀出来，使得第一中间锚点21的上端高于固定电极2的上表面，参考图5。
d、将固定电极2上第一锚点20与第一中间锚点21之间的位置刻蚀掉，使第一中间锚点21和固定电极2、第一锚点20分开；并将固定电极2刻蚀成预定的尺寸，参考图6。
e、在所述第一中间锚点21的上端压合质量块3；也就是说，将质量块3压合在第一中间锚点21的上端，基于上述的道理，二者之间的压合可以采用键合的方式，例如硅-硅键合、硅-二氧化硅键合或合金键合的方式。由于第一中间锚点21高于固定电极2的表面，使得压合在第一中间锚点21上的质量块3与固定电极2之间具有一定的间隙，参考图7。
f、在所述质量块3上刻蚀出位于第一中间锚点21上方的第二中间锚点31，以及用于连接质量块3和第二中间锚点31的连接梁(视图未出给)，并将质量块3刻蚀成预定的尺寸。也就是说，本发明上述的中间锚点4包括压合在一起的第一中间锚点21、第二中间锚点31，其中，第一中间锚点21从固定电极2上刻蚀出来，而第二中间锚点31从质量块3上刻蚀出来。压合在一起的第一中间锚点21与第二中间锚点31构成了用于将质量块3支撑在衬底1、固定电极2上方的中间锚点4，参考图8。在整个质量块3上将第二中间锚点31、连接梁刻蚀出来，使得质量块3弹性支撑在衬底1的上方。
优选的是，在所述步骤b和步骤c之间还包括将固定电极2进行刻蚀减薄的步骤。在所述步骤e和步骤f之间还包括将质量块3进行刻蚀减薄的步骤。以避免固定电极2、质量块3在无支撑结构下进行刻蚀减薄所造成的损坏。
当然，本发明的生产方法，还包括在衬底1上压合外壳5的步骤，从而将各部件封装在外壳5中，参考图9。
实施例2
参考图10，本发明提供了一种加速度计的Z轴结构，其包括衬底1a、质量块3a，还包括两个固定电极2a，在所述衬底1a的表面上设置有两个 第一锚点20a，分别用于连接两个固定电极2a，所述固定电极2a通过其端部连接在第一锚点20a上，该第一锚点20a与固定电极2a可以是一体成型结构，整体呈L形，固定电极2a位于水平方向上，而第一锚点20a位于垂直方向上。固定电极2a与衬底1a近似平行设置，由于第一锚点20a的设置，使得固定电极2a与衬底1a的表面之间具有一定的间隙，也就是说，固定电极2a通过第一锚点20a悬置在衬底1a上。固定电极2a可以通过单个第一锚点20a进行固定，当然，也可以采用多个锚点进行固定。
在两个第一锚点20a之间设置有中间锚点4a，该中间锚点4a固定在衬底1a的表面上，所述质量块3a通过该中间锚点4a弹性悬置在固定电极2a的上方。例如质量块3a通过弹性梁与中间锚点4a连接，使得质量块3a弹性支承在衬底1a、固定电极2a的上方，当然，质量块3a与固定电极2a之间具有一定的间隙，使得质量块3a可与两个固定电极2a分别构成两个检测电容，这属于本领域技术人员的公知常识，在此不再进行赘述。
其中，在质量块3a、固定电极2a上设置有多个通孔6a，可便于固定电极、可动质量块的结构释放。
本发明的Z轴结构，固定电极2a通过第一锚点20a与衬底1a连接，使得固定电极2a与衬底1a之间具有一定的间隙，这就将衬底1a到固定电极2a的形变传输通道切断，减小了固定电极2a与衬底1a的接触面积，可以有效地避免由于外界应力和温度变化引起的衬底的形变传到固定电极上，大大降低了Z轴结构的零点漂移。
本发明的Z轴结构中，所述第一锚点20a邻近中间锚点4a。两个第一锚点20a对称分布在中间锚点4a的两侧，在不影响加速度性能的前提下，使得第一锚点20a尽可能地靠近中间锚点4a，以便大大较低由于外界应力、温度变化所起来的电容差值。
进一步地，所述固定电极2a采用单晶硅材料制成，以提高固定电极2a的抗形变能力。所述固定电极2a的厚度优选在5μm以上。当然，如果工艺能力可以达到，固定电极2a可以做到5μm以下。为了进一步保证固定电极2a的强度，可以在固定电极2a的下表面设置有加强结构，例如网状的加强筋结构。
参考图11至图18，本发明还提供了一种Z轴结构的生产方法，包括以下步骤：
a、在衬底1a上沉积第一牺牲层7a，该第一牺牲层7a可以为氧化硅材料。并在该第一牺牲层7a上刻蚀出第一锚点、第一中间锚点的区域；具体地，根据第一锚点、第一中间锚点的形状而定，例如两个第一锚点需要对称分布在第一中间锚点的两侧，故，在第一牺牲层7a上也应做出相应的刻蚀区域出来，参考图11。
b、在第一牺牲层7a、第一锚点、第一中间锚点的区域沉积固定电极层a，参考图12，该固定电极层a包括位于第一牺牲层7a正上方的固定电极，以及位于第一锚点、第一中间锚点区域内的第一锚点20a、第一中间锚点21a。由于该区域的第一牺牲层7a已经被刻蚀掉，所述第一锚点20a、第一中间锚点21a直接沉积在衬底1a上，实现了第一锚点20a、第一中间锚点21a与衬底1a的连接。该固定电极层a可以是多晶硅材料，以便提高固定电极层的强度。
其中，鉴于第一锚点、第一中间锚点区域的影响，为了最终能够得到预定厚度的固定电极层，固定电极层的沉积厚度会大于预定的厚度，然后再进行平整化处理，也就是说，将沉积后的固定电极层进行刻蚀变薄，再进行步骤c。
c、在固定电极层a上刻蚀出固定电极2a、第一中间锚点21a的图案，并在固定电极2a上刻蚀出多个通孔6a。也就是说，将固定电极2a与第一中间锚点21a分离开来，而固定电极2a通过第一锚点20a连接在衬底上，参考图13。
d、在固定电极2a、第一中间锚点21a的上方沉积第二牺牲层8a，该第二牺牲层8a不仅位于固定电极2a、第一中间锚点21a的上方，而且还沉积到通孔6a中，以及第一中间锚点21a与固定电极2a之间的间隙中去，参考图14。和上述相同的道理，第二牺牲层8a的沉积厚度会大于预定的厚度，然后再进行平整化处理，也就是说，将第二牺牲层8a进行刻蚀变薄，再进行步骤e。
e、将位于第一中间锚点21a正上方的第二牺牲层8a刻蚀掉，形成以 凹槽80a，参考图15；
f、在第二牺牲层8a的上方沉积质量块层，此时，质量块层不但沉积到了第二牺牲层8a的上方，而且还沉积到凹槽80a内，与第一中间锚点21a连接在一起。和上述相同的道理，鉴于凹槽80a的影响，为了最终能够得到预定厚度的质量块层，质量块层的沉积厚度会大于预定的厚度，然后再进行平整化处理，也就是说，将沉积后的质量块层进行刻蚀变薄，再进行后续的刻蚀工序。
在质量块层上刻蚀出质量块3a、第二中间锚点31a的图案，其中第二中间锚点31a位于第一中间锚点21a的正上方；并在质量块3a上刻蚀出多个通孔6a，参考图16。也就是说，在质量块层上将质量块3a和第二中间锚点31a刻蚀出来，使得质量块3a与第二中间锚点31a之间仅通过弹性梁连接在一起，最终。也就是说，本发明上述的中间锚点4a包括沉积在一起的第一中间锚点21a、第二中间锚点31a，其中，第一中间锚点21a从固定电极层上刻蚀出来，而第二中间锚点31a从质量块层上刻蚀出来。沉积在一起的第一中间锚点21a与第二中间锚点31a构成了用于将质量块3a支撑在衬底1a、固定电极2a上方的中间锚点4a。
g、去掉第一牺牲层7a、第二牺牲层8a，形成了本发明的Z轴结构，参考图17。可以通过HF溶液或者气态HF来腐蚀掉第一牺牲层、第二牺牲层8a，这属于本领域技术人员的公知常识，在此不再进行赘述。通过在质量块3a、固定电极2a上设置的通孔，可以加快第一牺牲层7a、第二牺牲层8a的腐蚀，将质量块3a和固定电极2a快速地释放出来。
当然，本发明的生产方法，还包括在衬底1a上压合外壳5a的步骤，从而将各部件封装在外壳5a中，参考图18。
步骤a中的第一牺牲层7a，步骤d中的第二牺牲层8a，不限于氧化硅材料，也可以使用如聚酰亚胺(PI)的有机物材料。
在本发明的生产方法中，在固定电极层的沉积过程中，可以通过调整工艺参数，增加其内应力；而在质量块层的沉积过程中，可以通过调整工艺参数，降低其薄膜的内应力。
虽然已经通过例子对本发明的一些特定实施例进行了详细说明，但是本领 域的技术人员应该理解，以上例子仅是为了进行说明，而不是为了限制本发明的范围。本领域的技术人员应该理解，可在不脱离本发明的范围和精神的情况下，对以上实施例进行修改。本发明的范围由所附权利要求来限定。

Claims (10)

  1. 一种加速度计的Z轴结构，其特征在于：包括衬底(1、1a)、固定电极(2、2a)、质量块(3、3a)，在所述衬底(1、1a)的表面上设置有第一锚点(20、20a)，所述固定电极(2、2a)通过其端部连接在第一锚点(20、20a)上，所述固定电极(2、2a)通过第一锚点(20、20a)悬置在衬底(1、1a)上；在所述衬底(1、1a)的表面上还设置有中间锚点(4、4a)，所述质量块(3、3a)通过中间锚点(4、4a)悬置在固定电极(2、2a)的上方。
  2. 根据权利要求1所述的Z轴结构，其特征在于：所述固定电极(2、2a)与第一锚点(20、20a)一体成型。
  3. 根据权利要求1所述的Z轴结构，其特征在于：所述第一锚点(20、20a)邻近中间锚点(4、4a)。
  4. 根据权利要求1所述的Z轴结构，其特征在于：所述固定电极(2、2a)采用单晶硅或多晶硅材料制成。
  5. 根据权利要求1所述的Z轴结构，其特征在于：在所述质量块(3a)、固定电极(2a)上设置有多个通孔(6a)。
  6. 根据权利要求1所述的Z轴结构，其特征在于：所述固定电极(2、2a)的下表面还设置有加强结构。
  7. 一种Z轴结构的生产方法，其特征在于，包括以下步骤：
    a、在固定电极(2)的下表面上刻蚀出两个第一锚点(20)以及位于两个第一锚点(20)之间的第一中间锚点(21)；
    b、通过第一锚点(20)、第一中间锚点(21)将固定电极(2)压合在衬底(1)上；
    c、在固定电极(2)上表面上除了第一中间锚点(21)的位置进行刻蚀，使得第一中间锚点(21)高于固定电极(2)上表面的其它位置；
    d、将固定电极(2)上第一锚点(20)与第一中间锚点(21)之间的位置刻蚀掉，使第一中间锚点(21)和固定电极(2)分开；并将固定电极(2)刻蚀成预定的尺寸；
    e、在所述第一中间锚点(21)的上端压合质量块(3)；
    f、在所述质量块(3)上刻蚀出位于第一中间锚点(21)上方的第二中间锚点(31)以及用于连接质量块(3)和第二中间锚点(31)的连接梁。
  8. 一种Z轴结构的生产方法，其特征在于，包括以下步骤：
    a、在衬底(1a)上沉积第一牺牲层(7a)，并在该第一牺牲层(7a)上刻蚀出第一锚点、第一中间锚点的区域；
    b、在第一牺牲层(7a)上以及第一锚点、第一中间锚点的区域沉积固定电极层(a)；
    c、在固定电极层(a)上刻蚀出与第一锚点(20a)连接的固定电极(2a)以及第一中间锚点(21a)的图案，并在固定电极(2a)上刻蚀出多个通孔(6a)；
    d、在固定电极(2a)上以及第一中间锚点(21a)的区域沉积第二牺牲层(8a)；
    e、将位于第一中间锚点(21a)正上方的第二牺牲层(8a)刻蚀掉；
    f、在第二牺牲层(8a)上方沉积质量块层，并在质量块层上刻蚀出质量块(3a)、第二中间锚点(31a)的图案，其中第二中间锚点(31a)位于第一中间锚点(21a)的正上方；并在质量块(3a)上刻蚀出多个通孔(6a)；
    g、去掉第一牺牲层(7a)、第二牺牲层(8a)，形成Z轴结构。
  9. 根据权利要求8所述的生产方法，其特征在于：在所述步骤b、步骤c之间还包括将固定电极层(a)平整化成预定厚度的步骤。
  10. 根据权利要求8所述的生产方法，其特征在于：所述步骤f中，在将质量块层刻蚀出质量块(3a)、第二中间锚点(31a)的图案之前，还包括将质量块层平整化成预定厚度的步骤。
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