WO2016106766A1 - 一种化学机械抛光液及其应用 - Google Patents
一种化学机械抛光液及其应用 Download PDFInfo
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- WO2016106766A1 WO2016106766A1 PCT/CN2015/000899 CN2015000899W WO2016106766A1 WO 2016106766 A1 WO2016106766 A1 WO 2016106766A1 CN 2015000899 W CN2015000899 W CN 2015000899W WO 2016106766 A1 WO2016106766 A1 WO 2016106766A1
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- WO
- WIPO (PCT)
- Prior art keywords
- polishing liquid
- chemical mechanical
- mechanical polishing
- liquid according
- acid
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Definitions
- the invention relates to a chemical mechanical polishing liquid and an application thereof, in particular to a chemical mechanical polishing liquid for improving the polishing rate of silicon dioxide and an application thereof.
- CMP chemical mechanical polishing
- CMP Chemical mechanical polishing
- It usually consists of a polishing table with a polishing pad and a polishing head for carrying the chip.
- the polishing head holds the chip and then presses the front side of the chip against the polishing pad.
- the polishing head moves linearly on the polishing pad or in the same direction of motion as the polishing table.
- the slurry containing the abrasive particles is dropped onto the polishing pad and laid flat on the polishing pad by centrifugation.
- the surface of the chip achieves global planarization under both mechanical and chemical effects.
- the chemical mechanical polishing liquid used is mainly classified into an acidic and an alkaline slurry.
- the stability of the alkaline slurry is relatively good, but there is no suitable oxidizing agent, and the problem of surface cloud point and slight scratching is easily caused during the polishing process.
- Acidic pastes have shown certain advantages in this regard. It can achieve a higher polishing rate with lower abrasive particles.
- the size of the abrasive particles in the acid slurry gradually grows under the action of the chemical components in the slurry as the storage time increases. When the particle size is larger than 120 nm, sedimentation stratification and the like may occur, which seriously affects the polishing quality and causes product failure. So control the growth of abrasive particles and extend the service life. It is a problem that the acid slurry is eager to solve.
- abrasive particles used in chemical mechanical polishing fluids typically employ silica, including colloidal silica and fumed silica. They are solids themselves, but they are uniformly dispersed in aqueous solution, do not settle, and can even maintain long-term stability of 1 to 3 years.
- the stability of the abrasive particles in the aqueous phase can be explained by the electric double layer theory - since each particle surface carries the same charge, they repel each other and do not agglomerate.
- the Stern model when the colloidal ions move, a Zeta potential is generated on the shear plane.
- Zeta potential is an important indicator of colloidal stability because the stability of the colloid is closely related to the electrostatic repulsion between the particles.
- the decrease in Zeta potential reduces the electrostatic repulsion, resulting in an attractive van der Waals attraction between the particles, causing colloid accumulation and settling.
- the level of ionic strength is an important factor affecting the Zeta potential.
- the stability of the colloid is affected by many other factors in addition to the zeta potential. For example, due to the influence of temperature, at higher temperatures, the irregular thermal motion of the particles is intensified, and the probability of collision with each other increases, which accelerates aggregation; for example, it is more stable than neutral in strong alkaline and strong acidic conditions due to pH. Among them, the alkaline is the most stable, and the pH range of 4-7 is the most unstable; for example, some surfactants can act as a dispersing agent to improve the stability, while some surfactants reduce the nanometer by the surfactant type. The surface charge of the particles reduces electrostatic repulsion and accelerates sedimentation.
- anionic surfactants contribute to the stability of the nanoparticles, while cationic surfactants tend to reduce stability; for example, depending on the molecular weight of the additives, too long long chains of polymers sometimes entangle Nanoparticles increase the viscosity of the dispersion and accelerate particle agglomeration. Therefore, the stability of silica sol is affected by many factors.
- a polishing liquid containing a silane coupling agent and a polishing method are disclosed in U.S. Patent No. 6, 142, 706 and U.S. Patent No. 09,609, 882.
- the silane coupling agent serves to change the polishing speed of various materials and to improve the surface roughness.
- These two patents have not found that at high ionic strength (>0.1 mol/Kg), the silane coupling agent can act to counteract high ionic strength and stabilize the nanoparticles. Since it is usually contained in a very high ionic strength (for example, containing more than >0.2 mol/Kg of potassium ion), the electric double layer of the silica sol particles is greatly compressed, the electrostatic repulsion force is reduced, and gelation and precipitation are rapidly formed.
- the technical problem to be solved by the present invention is how to increase the polishing rate of silica and maintain the stability and dispersion of the abrasive particles in the chemical mechanical polishing liquid at high ionic strength.
- the present invention discloses a method in which a silicon-containing organic compound is used, and there is a significant synergistic effect between the silicon-containing compound and other complexing agents, which greatly increases the polishing rate of the silica.
- a silicon-containing organic compound is used, and there is a significant synergistic effect between the silicon-containing compound and other complexing agents, which greatly increases the polishing rate of the silica.
- a chemical mechanical polishing liquid comprising a silicon-containing compound, an electrolyte ion having an ionic strength of greater than or equal to 0.1 mol/Kg, a complexing agent, silica abrasive particles, and water
- the silicon-containing organic compound can be represented by the following formula:
- R is a non-hydrolyzable substituent, usually an alkyl group, having 1 to 50 carbon atoms, preferably 1 to 20 carbon atoms, of which 2 to 10 carbon atoms are most preferred; The carbon atoms can continue to be replaced by other atoms such as oxygen, nitrogen, sulfur, phosphine, halogen, silicon, and the like.
- D is an organic functional group attached to R, and may be an amino group, a ureido group, a thiol group, an epoxy group, an acryl group or the like.
- A, B are the same or different hydrolyzable substituents or hydroxyl groups; C may be a hydrolyzable group or a hydroxyl group, or may be a non-hydrolyzable alkyl substituent; A, B and C are usually a chlorine group, a methoxy group The group, ethoxy group, methoxyethoxy group, acetoxy group, hydroxyl group, etc., when these groups are hydrolyzed, form silanol (Si(OH)3), and combine with inorganic substances to form a siloxane.
- D is a vinyl group, an amino group, an epoxy group, an acryloyloxy group, a fluorenyl group or a ureido group. These reactions The group can be combined with an organic substance to react.
- a representative silicon-containing organic compound is a silane coupling agent such as the following structure:
- the silicon-containing organic compound can be added to the polishing liquid through various ways. 1: The abrasive particles are bonded to the silicon-containing compound before the preparation of the polishing liquid (commonly known as particle surface modification, surface treatment), and then the surface is modified. The post abrasive particles are added to the polishing liquid. 2: The silicon-containing organic compound is mixed with the abrasive particles and other components at the time of producing the polishing liquid. 3: the silicon-containing organic compound may be completely hydrolyzed or partially hydrolyzed to form a Si-OH group, and then added to the polishing liquid, in which the Si-OH group and the particle surface Si-OH are completely bonded or Partial bonding. Therefore, the silicon-containing organic compound used in the present invention may have various forms such as free, bonded, partially hydrolyzed, and completely hydrolyzed during polishing.
- the complexing agent used in the present invention is preferably a polycarboxylic acid and/or a hydroxycarboxylic acid and/or an amino acid, preferably benzoic acid, acetic acid, citric acid, maleic acid, oxalic acid, malonic acid, succinic acid. , adipic acid, propionic acid, tartaric acid, malic acid, oxalic acid, salicylic acid and glycine, histidine, tyrosine, lysine, arginine, glutamic acid, proline, aspartic acid
- One or more of the complexing agents are preferably present in an amount of from 0.01 to 1.5% by mass, more preferably from 0.05 to 0.5% by mass.
- the polishing composition is capable of operating at an acidic pH or an alkaline pH.
- the polishing composition has a pH between 1 and 7. Within this range, the pH is preferably greater than or equal to 2 and less than or equal to 6. The most preferred pH for the polishing composition is 4-6.
- the polishing composition may also comprise an inorganic or organic pH adjusting agent to reduce the pH of the polishing composition to an acidic pH or to increase the pH to an alkaline pH.
- Suitable inorganic pH reducing agents include, for example, nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, or at least one of the above inorganic pH reducing agents The combination.
- Suitable pH enhancers include one of the following: a metal hydroxide, ammonium hydroxide or a nitrogen-containing organic base, or a combination of the above-described pH increasing agents.
- the concentration of the silicon-containing organic compound in the polishing liquid is 0.001% to 1% by mass, preferably 0.01% to 0.5% by mass.
- the concentration of the silica abrasive particles is 2% to 10% by mass.
- the particle diameter is 20 to 200 nm, preferably 20 to 120 nm.
- electrolyte ions having an ionic strength of 0.1 mol/Kg or more are metal ions and non-metal ions.
- the electrolyte ions are potassium ions.
- the present invention achieves the problems of dispersion stability and pH stability of a chemical mechanical polishing liquid at a high ionic strength by a silane coupling agent.
- polishing speed of the silica is further greatly improved by the synergistic action of the silane coupling agent and the complexing agent;
- a highly concentrated chemical mechanical polishing liquid can be prepared by this method.
- the polishing liquid was prepared in accordance with the ingredients of the respective examples in Table 1 and the comparative examples, and the ratio thereof, and the mixture was uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH, HNO 3 or a pH adjuster.
- the polishing conditions were as follows: the polishing machine was a Mirra machine, a Fujibo polishing pad, a 200 mm Wafer, a down pressure of 1.5 psi, and a polishing droplet acceleration of 150 ml/min.
- Comparative Example 1 showed that at a very high ionic strength, the removal rate of silica was only 250 A/min, and the polishing solution was unstable, and the pH was raised from 4.0 to 6.6 in 30 days, and the layered sedimentation was rapid.
- Comparison of Comparative Example 3 and Comparative Example 1 showed that at a very high ionic strength, the addition of a silane coupling agent increased the removal rate of silica by 420 A/min, and the polishing liquid was stable and the average particle size of the abrasive particles ( The particle mean size) did not increase, but the pH of the polishing solution increased from 4.0 to 6.8.
- Comparative Example 2 showed that the addition of histidine did not increase the polishing rate of silica, and at the same time, the polishing liquid was unstable and rapidly destratified, but the pH of the polishing liquid was stable, and only increased by 0.1 in 30 days.
- the comparison between Example 1 and Comparative Example 2 showed that the addition of silane coupling agent in the presence of histidine increased the removal rate of silica by 642 A/min compared with no histidine and no silane coupling agent. This increase is greater than the sum of the contributions of both the silane coupling agent (420 A/min) and histidine (17 A/min), indicating that there is a synergy between the silane coupling agent and histidine and other complexing agents.
- Comparative Example 4 shows that in an alkaline environment, the silica removal rate (283 A/min) of the polishing solution of the low concentration abrasive particles is far from the action of the silicon-containing organic matter under the high ionic strength.
- the removal rate of silica (670 A/min) of the polishing liquid below the low concentration of abrasive particles in an acidic environment.
- the silica removal rate (670 A/min) was also higher than the silica removal rate (550 A/min) of the high concentration abrasive particle concentration in Comparative Example 5.
- Examples 1 to 14 there are silane coupling agents and complexing agents, the polishing liquid is relatively stable, the pH value is relatively stable, and the removal rate of silica is remarkably improved.
- the silane coupling agent has "the effect of resisting high ionic strength", the polishing liquid is very stable, and at the same time, the complexing agent has a function of stabilizing the pH of the polishing liquid.
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
Claims (18)
- 一种化学机械抛光液,其包括含硅化合物、大于或等于0.1mol/Kg的离子强度的电解质离子、络合剂、二氧化硅研磨颗粒以及水。
- 如权利要求2所述的化学机械抛光液,其特征在于,所述含硅的有机化合物中R为烷基,且所述烷基碳链上的碳原子被氧、氮、硫、膦、卤素、硅等其他原子继续取代;A,B和C分别为氯基、甲氧基、乙氧基、甲氧基乙氧基、乙酰氧基或羟基。
- 如权利要求1所述的化学机械抛光液,其特征在于,所述含硅的有机化合物为硅烷偶联剂。
- 如权利要求4所述的化学机械抛光液,其特征在于,所述含硅的有机化合物为3-氨基丙基三乙氧基硅烷(商品名KH-550),γ-(2,3-环氧丙氧基) 丙基三甲氧基硅烷(商品名KH-560),γ-(甲基丙烯酰氧)丙基三甲氧基硅烷(商品名KH-570),γ-巯丙基三乙氧基硅烷(商品名KH-580),γ-巯丙基三甲氧基硅烷(商品名KH-590),N-(β-氨乙基)-γ-氨丙基甲基二甲氧基硅烷(商品名KH-602),γ-氨乙基氨丙基三甲氧基硅烷(商品名KH-792)中的一种或多种。
- 如权利要求1所述的化学机械抛光液,其中,所述含硅的有机化合物的浓度为质量百分比0.001%~1%。
- 如权利要求6所述的化学机械抛光液,其中,所述含硅的有机化合物的浓度为质量百分比0.01%~0.5%。
- 如权利要求1所述的化学机械抛光液,其中,所述二氧化硅研磨颗粒的浓度为质量百分比2%~10%。
- 如权利要求1所述的化学机械抛光液,其中,所述二氧化硅研磨颗粒的粒径为20~200nm。
- 如权利要求9所述的化学机械抛光液,其中,所述二氧化硅研磨颗粒的粒径为20~120nm。
- 如权利要求1所述的化学机械抛光液,其中,所述络合剂选自多元羧酸、羟基羧酸和/或氨基酸。
- 如权利要求11所述的化学机械抛光液,其中,所述络合剂选自苯甲酸、乙酸、柠檬酸、马来酸、乙二酸、丙二酸、丁二酸、己二酸、丙酸、酒石酸、苹果酸、草酸、水杨酸和甘氨酸、组氨酸、酪氨酸、赖氨酸、精氨酸、谷氨 酸、脯氨酸、天冬氨酸中的一种或多种。
- 如权利要求1所述的化学机械抛光液,其中,所述络合剂的含量为质量百分比0.01~1.5%。
- 如权利要求13所述的化学机械抛光液,其中,所述络合剂的含量为质量百分比0.05~0.5%。
- 如权利要求1所述的化学机械抛光液,其中,所述电解质离子是金属离子和/或非金属离子。
- 如权利要求15所述的化学机械抛光液,其中,所述电解质离子是钾离子。
- 如权利要求1所述的化学机械抛光液,其中,所述化学机械抛光液的pH范围是1-7。
- 如权利要求1所述的化学机械抛光液,其中,所述化学机械抛光液还包括pH调节剂。
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CN201410856726.5A CN105802511A (zh) | 2014-12-29 | 2014-12-29 | 一种化学机械抛光液及其应用 |
CN201410856726.5 | 2014-12-29 |
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WO2023178003A1 (en) * | 2022-03-14 | 2023-09-21 | Versum Materials Us, Llc | Stable chemical mechanical planarization polishing compositions and methods for high rate silicon oxide removal |
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CN110757803A (zh) * | 2019-10-10 | 2020-02-07 | 四川建筑职业技术学院 | 一种3d打印模型抛光液 |
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EP1994107A2 (en) * | 2006-03-13 | 2008-11-26 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
TW201018644A (en) * | 2008-11-07 | 2010-05-16 | Jgc Catalysts & Chemicals Ltd | Non-orbicular silica sol, preparation method thereof and polishing composition using the same |
CN102093820A (zh) * | 2011-01-06 | 2011-06-15 | 清华大学 | 一种高稳定性的硅晶片化学机械抛光组合物 |
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US6646348B1 (en) * | 2000-07-05 | 2003-11-11 | Cabot Microelectronics Corporation | Silane containing polishing composition for CMP |
CN101338082A (zh) * | 2007-07-06 | 2009-01-07 | 安集微电子(上海)有限公司 | 改性二氧化硅溶胶及其制备方法和应用 |
JP5178121B2 (ja) * | 2007-09-28 | 2013-04-10 | 富士フイルム株式会社 | 研磨液及び研磨方法 |
CN102516876B (zh) * | 2011-11-22 | 2014-06-04 | 清华大学 | 一种用于硅晶片抛光的抛光组合物及其制备方法 |
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- 2014-12-29 CN CN201410856726.5A patent/CN105802511A/zh active Pending
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- 2015-12-08 TW TW104141058A patent/TW201623558A/zh unknown
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1994107A2 (en) * | 2006-03-13 | 2008-11-26 | Cabot Microelectronics Corporation | Composition and method to polish silicon nitride |
CN102159662A (zh) * | 2008-09-19 | 2011-08-17 | 卡伯特微电子公司 | 用于低k电介质的阻挡物浆料 |
TW201018644A (en) * | 2008-11-07 | 2010-05-16 | Jgc Catalysts & Chemicals Ltd | Non-orbicular silica sol, preparation method thereof and polishing composition using the same |
CN102210013A (zh) * | 2008-11-10 | 2011-10-05 | 旭硝子株式会社 | 研磨用组合物和半导体集成电路装置的制造方法 |
CN102093820A (zh) * | 2011-01-06 | 2011-06-15 | 清华大学 | 一种高稳定性的硅晶片化学机械抛光组合物 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023178003A1 (en) * | 2022-03-14 | 2023-09-21 | Versum Materials Us, Llc | Stable chemical mechanical planarization polishing compositions and methods for high rate silicon oxide removal |
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TW201623558A (zh) | 2016-07-01 |
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