WO2016101396A1 - 掩膜板的制作方法 - Google Patents

掩膜板的制作方法 Download PDF

Info

Publication number
WO2016101396A1
WO2016101396A1 PCT/CN2015/072552 CN2015072552W WO2016101396A1 WO 2016101396 A1 WO2016101396 A1 WO 2016101396A1 CN 2015072552 W CN2015072552 W CN 2015072552W WO 2016101396 A1 WO2016101396 A1 WO 2016101396A1
Authority
WO
WIPO (PCT)
Prior art keywords
mask
hole
fabricating
vapor deposition
curved groove
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2015/072552
Other languages
English (en)
French (fr)
Inventor
刘亚伟
吴聪原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Publication of WO2016101396A1 publication Critical patent/WO2016101396A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks

Definitions

  • the present invention relates to the field of fabrication of display devices, and more particularly to a method of fabricating a mask.
  • the fabrication of flat panel display devices or semiconductors involves the process of forming a thin film pattern on a substrate.
  • a deposition mask or photomask capable of depositing or transferring a high resolution pattern to a substrate is required. board.
  • the flat panel display device has many advantages such as thin body, power saving, no radiation, and has been widely used.
  • the existing flat panel display devices mainly include a liquid crystal display (LCD) and an organic light emitting display (OLED).
  • the OLED display device not only has excellent display performance, but also has the characteristics of self-illumination, simple structure, ultra-thin, fast response, wide viewing angle, low power consumption and flexible display, and is known as "dream display”. It has won the favor of major display manufacturers and has become the main force of the third generation display devices in the display technology field.
  • An OLED display device is generally composed of an anode, a cathode, and an organic electroluminescent material layer sandwiched between an anode and a cathode.
  • the organic electroluminescent material layer further includes a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer. And electron injection layer.
  • the luminescence mechanism of the OLED display device is to inject electrons and holes from the cathode and the yang respectively, and the injected electrons and holes are recombined in the luminescent layer to excite the luminescent layer molecules to generate singlet excitons, singlet excitons.
  • the radiation is attenuated to emit light.
  • an organic electroluminescent material is usually deposited on a ITO anode by vacuum thermal evaporation using a mask, and the metal cathode is deposited by vacuum thermal evaporation.
  • the mask having a small opening size is formed by chemical etching using a stainless steel (SUS) alloy or an INVAR alloy sheet having a thickness of 20 ⁇ m to 100 ⁇ m. Due to the limitation of the chemical etching process conditions, the occurrence of side etching cannot be avoided, and the accuracy of the opening size of the metal plate having a thickness greater than 20 ⁇ m cannot be controlled within 2 ⁇ m.
  • the electroforming process can avoid side etching and improve the dimensional accuracy of the opening.
  • the casting process cannot have a taper angle mask, which is easy to block the vapor deposition material during the evaporation process and reduce the evaporation efficiency.
  • the object of the present invention is to provide a method for fabricating a mask.
  • the dimensional accuracy of the vapor deposition opening can be improved, and on the other hand, the vapor deposition opening has a taper angle required for design, and the shielding of the vapor deposition material is reduced. Improve the evaporation efficiency and make the mask more in line with the process requirements.
  • the present invention provides a method for fabricating a mask.
  • the initial mask is first formed by an electroforming process or a physical vapor deposition process.
  • the initial mask has a plurality of openings arranged in an array.
  • a straight hole through hole having a size equal to the design opening size required for vapor deposition; and a chemical etching process is performed to etch the lower surface of the initial mask and the inner wall of the straight hole through hole to form a curve having a tapered cone angle
  • the groove is formed, and the opening size of the curved groove is gradually reduced from bottom to top to the design opening size required for vapor deposition, thereby fabricating a mask.
  • the manufacturing method of the mask comprises the following steps:
  • Step 1 providing a metal substrate, coating a layer of photoresist on the metal substrate;
  • Step 2 exposing and developing the photoresist to form a photoresist pattern
  • the photoresist pattern comprises a plurality of straight holes arranged in an array and spaced apart from each other, and an interval size between each adjacent two straight holes is equal to an opening design size required for evaporation;
  • Step 3 depositing a mask material on the metal substrate in a straight hole of the photoresist pattern by using an electroforming process or a physical vapor deposition technique;
  • Step 4 removing the metal substrate and the photoresist pattern to obtain an initial mask
  • the initial mask has a plurality of straight hole through holes arranged in an array, having an opening size equal to a design opening required for vapor deposition, and a retaining wall between each adjacent two straight holes. ;
  • Step 5 forming an upper photo-etching layer pattern and a lower photo-etching layer pattern on the upper and lower surfaces of the initial mask;
  • the upper photo-etching layer pattern completely covers the upper surface of the retaining wall, and the lower photo-etching layer pattern covers only the intermediate portion of the lower surface of the retaining wall;
  • Step 6 etching a lower surface of the initial mask and an inner wall of the through hole through a chemical etching process to form a curved groove having a tapered cone angle;
  • the opening size of the curved groove is gradually reduced from bottom to top to the design opening size required for evaporation;
  • Step 7 Removing the upper and lower photo-etching layer patterns to obtain a mask.
  • the mask material in the step 3 is nickel or a nickel-iron alloy.
  • the step 3 uses an electroforming process to connect the metal substrate to the negative electrode, and the mask material is used.
  • the positive electrode a solution containing metal ions of the mask material is used as a medium.
  • the mask has a thickness of from 20 micrometers to 100 micrometers.
  • the mask has a thickness of 50 microns.
  • the curved groove has a taper angle of less than 63 degrees.
  • the curved groove has a taper angle of 53 degrees or 56 degrees.
  • the curved groove is in the shape of a bowl that is inverted.
  • the mask is applied to vacuum thermal evaporation of an organic electroluminescent material in an OLED display device.
  • the invention also provides a method for fabricating a mask plate, wherein an initial mask panel is firstly formed by an electroforming process or a physical vapor deposition process, the initial mask panel having a plurality of arrays arranged in an opening size equal to evaporation.
  • the required straight hole through hole of the designed opening size is further etched by a chemical etching process to form a curved groove having a tapered cone angle on the lower surface of the initial mask and the inner wall of the through hole through hole.
  • the opening size of the curved groove is gradually reduced from bottom to top to the design opening size required for evaporation, thereby fabricating a mask;
  • Step 1 providing a metal substrate, coating a layer of photoresist on the metal substrate;
  • Step 2 exposing and developing the photoresist to form a photoresist pattern
  • the photoresist pattern comprises a plurality of straight holes arranged in an array and spaced apart from each other, and an interval size between each adjacent two straight holes is equal to an opening design size required for evaporation;
  • Step 3 depositing a mask material on the metal substrate in a straight hole of the photoresist pattern by using an electroforming process or a physical vapor deposition process;
  • Step 4 removing the metal substrate and the photoresist pattern to obtain an initial mask
  • the initial mask has a plurality of straight hole through holes arranged in an array, having an opening size equal to a design opening required for vapor deposition, and a retaining wall between each adjacent two straight holes. ;
  • Step 5 forming an upper photo-etching layer pattern and a lower photo-etching layer pattern on the upper and lower surfaces of the initial mask;
  • the upper photo-etching layer pattern completely covers the upper surface of the retaining wall, and the lower photo-etching layer pattern covers only the intermediate portion of the lower surface of the retaining wall;
  • Step 6 etching a lower surface of the initial mask and an inner wall of the through hole through a chemical etching process to form a curved groove having a tapered cone angle;
  • the opening size of the curved groove is gradually reduced from bottom to top to the design opening size required for evaporation;
  • Step 7 removing the upper and lower photo-etching layer patterns to obtain a mask
  • the mask material in the step 3 is nickel or nickel-iron alloy
  • the step 3 adopts an electroforming process, connecting the metal substrate to the negative electrode, using the mask material as a positive electrode, and using a solution containing a metal ion of the mask material as a medium;
  • the mask has a thickness of 20 micrometers to 100 micrometers;
  • the curved groove has a taper angle of less than 63 degrees.
  • the method for fabricating a mask provided by the present invention firstly forms an initial mask by an electroforming process or a physical vapor deposition process, and forms a plurality of arrays in the initial mask.
  • the opening size is equal to the straight hole through hole of the designed opening size required for vapor deposition; and the lower surface of the initial mask and the inner wall of the straight hole through hole are etched by a chemical etching process to form a taper angle
  • the curved groove, and the opening size of the curved groove is gradually reduced from bottom to top to the design opening size required for vapor deposition, thereby forming a mask plate, on the one hand, the size of the vapor deposition opening can be increased.
  • Accuracy on the one hand, makes the vapor deposition opening have the oblique cone angle required by the design, reduces the shielding of the evaporation material, improves the evaporation efficiency, and makes the mask more in line with the process requirements.
  • FIG. 1 is a flow chart of a method of fabricating a mask according to the present invention.
  • FIG. 2 is a cross-sectional view showing the first step of the method for fabricating a mask according to the present invention
  • FIG. 3 is a schematic cross-sectional view showing a step 2 of a method for fabricating a mask according to the present invention
  • FIG. 4 is a schematic cross-sectional view showing a step 3 of a method for fabricating a mask according to the present invention
  • FIG. 5 is a cross-sectional view showing the step 4 of the method for fabricating a mask according to the present invention.
  • FIG. 6 is a cross-sectional view showing the step 5 of the method for fabricating a mask according to the present invention.
  • Figure 7 is a cross-sectional view showing the step 6 of the method for fabricating the mask of the present invention.
  • Figure 8 is a cross-sectional view showing the step 7 of the method of fabricating the mask of the present invention.
  • the present invention provides a method for fabricating a mask, comprising the following steps:
  • Step 1 as shown in FIG. 2, a metal substrate 1 is provided, and a coating is applied on the metal substrate 1. Layer photoresist 2'.
  • the surface of the metal substrate 1 is relatively smooth, such as a stainless steel substrate.
  • Step 2 As shown in Fig. 3, the photoresist 2' is exposed and developed to form a photoresist pattern 2.
  • the photoresist pattern 2 includes a plurality of mutually arranged straight holes 21 arranged in an array, the straight holes 21 exposing the surface of the metal substrate 1, between each adjacent two straight holes 21
  • the spacing dimension is equal to the design opening size W required for evaporation.
  • Step 3 As shown in FIG. 4, a mask material is deposited on the metal substrate 1 in the straight hole 21 of the photoresist pattern 2 by an electroforming process or a physical vapor deposition (PVD) process.
  • PVD physical vapor deposition
  • the mask material is preferably nickel or a nickel-iron alloy.
  • the metal substrate 1 is connected to the negative electrode by using an electroforming process, and a mask material such as nickel or nickel-iron alloy is used as a positive electrode, and a solution containing metal ions of the mask material, such as nickel sulfate, nickel chloride, A salt solution such as ferrous sulfate is used as a medium, and a masking material is deposited on the metal substrate 1 in the straight hole 21 of the photoresist pattern 2 by electrolysis.
  • a mask material such as nickel or nickel-iron alloy
  • a solution containing metal ions of the mask material such as nickel sulfate, nickel chloride,
  • a salt solution such as ferrous sulfate
  • Step 4 As shown in Fig. 5, the metal substrate 1 and the photoresist pattern 2 are removed to obtain an initial mask 3'.
  • the initial mask 3' formed by a casting process or a PVD process has a plurality of straight hole through holes 31 arranged in an array and having an opening size equal to the design opening size W required for vapor deposition, and each adjacent A retaining wall 32 between the two straight through holes 31.
  • the deviation between the opening size of the straight hole through hole 31 and the design opening size W required for vapor deposition can be reduced, and the dimensional accuracy of the straight hole through hole 31 can be improved.
  • Step 5 The surface of the initial mask 3' near the side to be vapor-deposited is defined as the upper surface, and the other surface is defined as the lower surface, as shown in FIG. 6, above and below the initial mask 3'.
  • the upper photoresist layer pattern 41 and the lower photo etch layer pattern 42 are formed on the surface, respectively.
  • the upper and lower photo etch layer patterns 41, 42 provide a protective layer for the chemical etching of the subsequent step 6.
  • the upper and lower photo-etching layer patterns 41 and 42 are obtained by coating a photoresist, exposing and developing the photoresist.
  • the upper photo etch layer pattern 41 completely covers the upper surface of the retaining wall 32, and the lower photo etch layer pattern 42 covers only the middle portion of the lower surface of the retaining wall 32, that is, the lower light
  • the size of the etch layer pattern 42 is smaller than the size of the upper etch layer pattern 41.
  • Step 6 As shown in FIG. 7, the lower surface of the initial mask 3' and the inner wall of the through hole through hole 31 are etched by a chemical etching process to form a curved groove 33 having a tapered taper angle ⁇ .
  • the curved groove 33 has an inverted bowl shape, and the opening size thereof is gradually reduced from bottom to top until intersecting with the remaining partial straight hole through holes 31 to jointly form an evaporation opening, that is, the curved groove
  • the opening size of 33 is gradually reduced from bottom to top to the design opening size W required for vapor deposition.
  • the curved groove 33 can reduce the shielding of the vapor deposition material, improve the evaporation efficiency, and the smaller the height of the remaining partial straight hole through hole 31, the more favorable to reducing the evaporation material.
  • the most desirable state of the occlusion is that the curved groove 33 directly intersects the upper surface of the initial mask 3'.
  • the inclined cone angle ⁇ of the curved groove 33 is less than 63 degrees.
  • the curved cone angle ⁇ of the curved groove 33 is 53 degrees or 56 degrees.
  • Step 7 As shown in FIG. 8, the upper and lower photo-etching layer patterns 41 and 42 are removed to obtain a mask 3.
  • the mask 3 has a thickness of 20 micrometers to 100 micrometers. Preferably, the mask 3 has a thickness of 50 micrometers.
  • the straight hole through hole 31 is formed by an electroforming process or a PVD process, and the dimensional accuracy is high, and the deviation between the designed opening size W required for vapor deposition is small; the curved groove 33 is formed by a chemical etching process. It has a taper angle ⁇ , and the opening size is gradually reduced from bottom to top to the design opening size W required for vapor deposition, which can reduce the shielding of the vapor deposition material and improve the evaporation efficiency.
  • the mask 3 produced by the method can be applied to vacuum thermal evaporation of organic electroluminescent materials in OLED display devices, including organic materials and inorganic materials such as lithium fluoride (LiF); and can also be applied to other vacuum thermal evaporation. field.
  • organic electroluminescent materials including organic materials and inorganic materials such as lithium fluoride (LiF); and can also be applied to other vacuum thermal evaporation. field.
  • LiF lithium fluoride
  • an initial mask is first formed by an electroforming process or a physical vapor deposition process, and a plurality of arrays are arranged in the initial mask to have an opening size equal to The straight hole through hole of the designed opening size required for vapor deposition; and the lower surface of the initial mask plate and the inner wall of the straight hole through hole are etched by a chemical etching process to form a curved concave shape having a tapered cone angle
  • the groove is formed, and the opening size of the curved groove is gradually reduced from bottom to top to the design opening size required for vapor deposition, thereby preparing a mask plate, which can improve the dimensional accuracy of the vapor deposition opening.
  • the vapor deposition opening has the oblique taper angle required by the design, reduces the shielding of the vapor deposition material, improves the evaporation efficiency, and makes the mask plate more in line with the process requirements.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板(3')，该初始掩膜板(3')具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸(W)的直孔通孔(31)；再采用化学刻蚀工艺，对初始掩膜板(3')的下表面及直孔通孔(31)的内壁进行刻蚀，形成具有斜锥角(Φ)的曲线形凹槽(33)，该曲线形凹槽(33)的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸(W)，从而制作出掩膜板(3)，一方面能够提高蒸镀开孔的尺寸精度，一方面使蒸镀开孔具有设计需要的斜锥角，减少对蒸镀材料的遮挡，提高蒸镀效率，使掩膜板更符合制程要求。

Description

掩膜板的制作方法 技术领域
本发明涉及显示器件的制作领域，尤其涉及一种掩膜板的制作方法。
背景技术
平板显示器件或者半导体的制作涉及到在基底上形成薄膜图案的过程。随着显示技术及半导体技术的发展，为了适应高分辨率、高像素密度(Pixel Per Inch)的要求，需要一种能够将高分辨率图案沉积或者转移至基底的沉积掩膜板或光掩膜板。
平板显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平板显示器件主要包括液晶显示器件(Liquid Crystal Display，LCD)及有机电致发光显示器件(Organic Light Emitting Display，OLED)。其中，OLED显示器件不仅具有十分优异的显示性能，还具有自发光、结构简单、超轻薄、响应速度快、宽视角、低功耗及可实现柔性显示等特性，被誉为“梦幻显示器”，得到了各大显示器厂家的青睐，已成为显示技术领域中第三代显示器件的主力军。
OLED显示器件通常由阳极、阴极、以及夹在阳极和阴极之间的有机电致发光材料层构成，有机电致发光材料层又包括空穴注入层、空穴传输层、发光层、电子传输层、及电子注入层。OLED显示器件的发光机理是从阴、阳两级分别注入电子和空穴，被注入的电子和空穴经传输在发光层内复合，从而激发发光层分子产生单态激子，单态激子辐射衰减而发光。
制作OLED显示器件通常需使用掩膜板将有机电致发光材料以真空热蒸镀的方式成膜于ITO阳极上，再将金属阴极以真空热蒸镀的方式沉积上去。为了实现OLED显示器件的高分辨率，需要减小有机电致发光材料层上各个像素的尺寸，因而也需要减小用于制备该有机电致发光材料层的掩膜板的开孔尺寸。一般情况下，上述开孔尺寸很小的掩膜板是使用一块厚度为20微米～100微米的不锈钢(SUS)合金或者因瓦(INVAR)合金板材，通过化学刻蚀的方式制作开孔。由于化学刻蚀的工艺条件限制，无法避免侧蚀现象的发生，且无法达到将厚度大于20微米的金属板材的开孔尺寸精度控制在2微米以内。
与化学刻蚀工艺相比，电铸工艺可以避免侧蚀、改善开孔尺寸精度，未来极有可能取代通过化学刻蚀金属板材来制作掩膜板的方法，但通过电 铸工艺无法具有斜锥角(Taper Angle)的掩膜板，容易造成蒸镀过程中对蒸镀材料的遮挡，降低蒸镀效率。
发明内容
本发明的目的在于提供一种掩膜板的制作方法，一方面能够提高蒸镀开孔的尺寸精度，一方面使蒸镀开孔具有设计需要的斜锥角，减少对蒸镀材料的遮挡，提高蒸镀效率，使掩膜板更符合制程要求。
为实现上述目的，本发明提供一种掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板，该初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔；再采用化学刻蚀工艺，对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽，该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸，从而制作出掩膜板。
所述的掩膜板的制作方法，包括如下步骤：
步骤1、提供一金属基板，在所述金属基板上涂覆一层光刻胶；
步骤2、对所述光刻胶进行曝光、显影，形成光刻胶图案；
所述光刻胶图案包括多个呈阵列式排布的、相互间隔的直孔，每相邻两个直孔之间的间隔尺寸等于蒸镀所需的开孔设计尺寸；
步骤3、采用电铸工艺或物理气相沉积艺在所述金属基板上于光刻胶图案的直孔内沉积一层掩膜材料；
步骤4、去除金属基板和光刻胶图案，得到初始掩膜板；
所述初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔、及位于每相邻两个直孔通孔之间的挡墙；
步骤5、在初始掩膜板的上、下表面分别形成上光致刻蚀层图案、下光致刻蚀层图案；
所述上光致刻蚀层图案完全覆盖所述挡墙的上表面，所述下光致刻蚀层图案仅覆盖所述挡墙的下表面的中间部分；
步骤6、采用化学刻蚀工艺对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽；
该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸；
步骤7、去除所述上、下光致刻蚀层图案，得到掩膜板。
所述步骤3中的掩膜材料为镍、或镍铁合金。
所述步骤3采用电铸工艺，将所述金属基板连接负极，将掩膜材料作 为正极，将含有掩膜材料金属离子的溶液作为媒介。
所述掩膜板的厚度为20微米～100微米。
所述掩膜板的厚度为50微米。
所述曲线形凹槽的斜锥角小于63度。
所述曲线形凹槽的斜锥角为53度或56度。
所述曲线形凹槽呈倒扣的碗状。
所述掩膜板应用于OLED显示器件中有机电致发光材料的真空热蒸镀。
本发明还提供一种掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板，该初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔；再采用化学刻蚀工艺，对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽，该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸，从而制作出掩膜板；
其中，包括如下步骤：
步骤1、提供一金属基板，在所述金属基板上涂覆一层光刻胶；
步骤2、对所述光刻胶进行曝光、显影，形成光刻胶图案；
所述光刻胶图案包括多个呈阵列式排布的、相互间隔的直孔，每相邻两个直孔之间的间隔尺寸等于蒸镀所需的开孔设计尺寸；
步骤3、采用电铸工艺或物理气相沉积工艺在所述金属基板上于光刻胶图案的直孔内沉积一层掩膜材料；
步骤4、去除金属基板和光刻胶图案，得到初始掩膜板；
所述初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔、及位于每相邻两个直孔通孔之间的挡墙；
步骤5、在初始掩膜板的上、下表面分别形成上光致刻蚀层图案、下光致刻蚀层图案；
所述上光致刻蚀层图案完全覆盖所述挡墙的上表面，所述下光致刻蚀层图案仅覆盖所述挡墙的下表面的中间部分；
步骤6、采用化学刻蚀工艺对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽；
该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸；
步骤7、去除所述上、下光致刻蚀层图案，得到掩膜板；
其中，所述步骤3中的掩膜材料为镍、或镍铁合金；
其中，所述步骤3采用电铸工艺，将所述金属基板连接负极，将掩膜材料作为正极，将含有掩膜材料金属离子的溶液作为媒介；
其中，所述掩膜板的厚度为20微米～100微米；
其中，所述曲线形凹槽的斜锥角小于63度。
本发明的有益效果：本发明提供的一种掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板，在初始掩膜板形成多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔；再采用化学刻蚀工艺，对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽，且使曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸，从而制作出掩膜板，一方面能够提高蒸镀开孔的尺寸精度，一方面使蒸镀开孔具有设计需要的斜锥角，减少对蒸镀材料的遮挡，提高蒸镀效率，使掩膜板更符合制程要求。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为本发明掩膜板的制作方法的流程图；
图2为本发明掩膜板的制作方法的步骤1的剖面示意图；
图3为本发明掩膜板的制作方法的步骤2的剖面示意图；
图4为本发明掩膜板的制作方法的步骤3的剖面示意图；
图5为本发明掩膜板的制作方法的步骤4的剖面示意图；
图6为本发明掩膜板的制作方法的步骤5的剖面示意图；
图7为本发明掩膜板的制作方法的步骤6的剖面示意图；
图8为本发明掩膜板的制作方法的步骤7的剖面示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图1，本发明提供一种掩膜板的制作方法，包括如下步骤：
步骤1、如图2所示，提供一金属基板1，在所述金属基板1上涂覆一 层光刻胶2’。
所述金属基板1的表面比较光滑，如不锈钢基板。
步骤2、如图3所示，对所述光刻胶2’进行曝光、显影，形成光刻胶图案2。
具体的，所述光刻胶图案2包括多个呈阵列式排布的、相互间隔的直孔21，所述直孔21暴露出金属基板1的表面，每相邻两个直孔21之间的间隔尺寸等于蒸镀所需的设计开孔尺寸W。
步骤3、如图4所示，采用电铸工艺或物理气相沉积(Physical Vapor Deposition，PVD)工艺在所述金属基板1上于光刻胶图案2的直孔21内沉积一层掩膜材料。
具体的，所述掩膜材料优选为镍、或镍铁合金。
优选的，该步骤3采用电铸工艺，将所述金属基板1连接负极，将掩膜材料如镍、或镍铁合金作为正极，将含有掩膜材料金属离子的溶液如硫酸镍、氯化镍、与硫酸亚铁等盐溶液作为媒介，通以直流电，经电解反应在所述金属基板1上于光刻胶图案2的直孔21内沉积一层掩膜材料。
步骤4、如图5所示，去除金属基板1和光刻胶图案2，得到初始掩膜板3’。
由于掩膜材料沉积在所述光刻胶图案2的直孔21内，且每相邻两个直孔21之间的间隔尺寸等于蒸镀所需的设计开孔尺寸W，相应的，经电铸工艺或PVD工艺形成的所述初始掩膜板3’具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸W的直孔通孔31、及位于每相邻两个直孔通孔31之间的挡墙32。
由于采用电铸工艺或PVD工艺不存在侧蚀现象，能够减少直孔通孔31开口尺寸与蒸镀所需的设计开孔尺寸W之间的偏差，提高所述直孔通孔31的尺寸精度。
步骤5、将初始掩膜板3’靠近待蒸镀面一侧的表面定义为上表面，另一侧表面定义为下表面，如图6所示，在初始掩膜板3’的上、下表面分别形成上光致刻蚀层图案41、下光致刻蚀层图案42。所述上、下光致刻蚀层图案41、42为后续步骤6的化学刻蚀提供保护层。
具体的，所述上、下光致刻蚀层图案41、42均通过涂覆光刻胶、再对光刻胶进行曝光、显影制得。所述上光致刻蚀层图案41完全覆盖所述挡墙32的上表面，所述下光致刻蚀层图案42仅覆盖所述挡墙32的下表面的中间部分，即所述下光致刻蚀层图案42的尺寸小于所述上光致刻蚀层图案41的尺寸。
步骤6、如图7所示，采用化学刻蚀工艺对初始掩膜板3’的下表面及直孔通孔31的内壁进行刻蚀，形成具有斜锥角Φ的曲线形凹槽33。
所述曲线形凹槽33呈倒扣的碗状，其开口尺寸自下而上逐渐减小直至与剩余的部分直孔通孔31相交，共同构成蒸镀开孔，即所述曲线形凹槽33的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸W。
值得一提的是，所述曲线形凹槽33能够减少对蒸镀材料的遮挡，提高蒸镀效率，且所述剩余的部分直孔通孔31的高度越小越有利于减少对蒸镀材料的遮挡，最理想的状态是所述曲线形凹槽33直接与初始掩膜板3’的上表面相交。
进一步的，所述曲线形凹槽33的斜锥角Φ小于63度，优选的，所述曲线形凹槽33的斜锥角Φ为53度或56度。
步骤7、如图8所示，去除所述上、下光致刻蚀层图案41、42，得到掩膜板3。
具体的，所述掩膜板3的厚度为20微米～100微米，优选的，所述掩膜板3的厚度为50微米。
由于所述掩膜板3的蒸镀开孔由曲线形凹槽33与直孔通孔31相交得到。所述直孔通孔31经电铸工艺或PVD工艺形成，尺寸精度高，与蒸镀所需的设计开孔尺寸W之间的偏差小；所述曲线形凹槽33经化学刻蚀工艺形成，其具有斜锥角Φ，且开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸W，能够减少对蒸镀材料的遮挡，提高蒸镀效率。
由该方法制作的掩膜板3可应用于OLED显示器件中有机电致发光材料的真空热蒸镀，包括有机材料及氟化锂(LiF)等无机材料；也可应用于其它真空热蒸镀领域。
综上所述，本发明的掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板，在初始掩膜板形成多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔；再采用化学刻蚀工艺，对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽，且使曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸，从而制作出掩膜板，一方面能够提高蒸镀开孔的尺寸精度，一方面使蒸镀开孔具有设计需要的斜锥角，减少对蒸镀材料的遮挡，提高蒸镀效率，使掩膜板更符合制程要求。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (15)

  1. 一种掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板，该初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔；再采用化学刻蚀工艺，对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽，该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸，从而制作出掩膜板。
  2. 如权利要求1所述的掩膜板的制作方法，其中，包括如下步骤：
    步骤1、提供一金属基板，在所述金属基板上涂覆一层光刻胶；
    步骤2、对所述光刻胶进行曝光、显影，形成光刻胶图案；
    所述光刻胶图案包括多个呈阵列式排布的、相互间隔的直孔，每相邻两个直孔之间的间隔尺寸等于蒸镀所需的开孔设计尺寸；
    步骤3、采用电铸工艺或物理气相沉积工艺在所述金属基板上于光刻胶图案的直孔内沉积一层掩膜材料；
    步骤4、去除金属基板和光刻胶图案，得到初始掩膜板；
    所述初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔、及位于每相邻两个直孔通孔之间的挡墙；
    步骤5、在初始掩膜板的上、下表面分别形成上光致刻蚀层图案、下光致刻蚀层图案；
    所述上光致刻蚀层图案完全覆盖所述挡墙的上表面，所述下光致刻蚀层图案仅覆盖所述挡墙的下表面的中间部分；
    步骤6、采用化学刻蚀工艺对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽；
    该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸；
    步骤7、去除所述上、下光致刻蚀层图案，得到掩膜板。
  3. 如权利要求2所述的掩膜板的制作方法，其中，所述步骤3中的掩膜材料为镍、或镍铁合金。
  4. 如权利要求2所述的掩膜板的制作方法，其中，所述步骤3采用电铸工艺，将所述金属基板连接负极，将掩膜材料作为正极，将含有掩膜材料金属离子的溶液作为媒介。
  5. 如权利要求2所述的掩膜板的制作方法，其中，所述掩膜板的厚度 为20微米～100微米。
  6. 如权利要求5所述的掩膜板的制作方法，其中，所述掩膜板的厚度为50微米。
  7. 如权利要求2所述的掩膜板的制作方法，其中，所述曲线形凹槽的斜锥角小于63度。
  8. 如权利要求7所述的掩膜板的制作方法，其中，所述曲线形凹槽的斜锥角为53度或56度。
  9. 如权利要求2所述的掩膜板的制作方法，其中，所述曲线形凹槽呈倒扣的碗状。
  10. 如权利要求1所述的掩膜板的制作方法，其中，所述掩膜板应用于OLED显示器件中有机电致发光材料的真空热蒸镀。
  11. 一种掩膜板的制作方法，先采用电铸工艺或物理气相沉积工艺制作出初始掩膜板，该初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔；再采用化学刻蚀工艺，对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽，该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺寸，从而制作出掩膜板；
    其中，包括如下步骤：
    步骤1、提供一金属基板，在所述金属基板上涂覆一层光刻胶；
    步骤2、对所述光刻胶进行曝光、显影，形成光刻胶图案；
    所述光刻胶图案包括多个呈阵列式排布的、相互间隔的直孔，每相邻两个直孔之间的间隔尺寸等于蒸镀所需的开孔设计尺寸；
    步骤3、采用电铸工艺或物理气相沉积工艺在所述金属基板上于光刻胶图案的直孔内沉积一层掩膜材料；
    步骤4、去除金属基板和光刻胶图案，得到初始掩膜板；
    所述初始掩膜板具有多个呈阵列式排布的、开口尺寸等于蒸镀所需的设计开孔尺寸的直孔通孔、及位于每相邻两个直孔通孔之间的挡墙；
    步骤5、在初始掩膜板的上、下表面分别形成上光致刻蚀层图案、下光致刻蚀层图案；
    所述上光致刻蚀层图案完全覆盖所述挡墙的上表面，所述下光致刻蚀层图案仅覆盖所述挡墙的下表面的中间部分；
    步骤6、采用化学刻蚀工艺对初始掩膜板的下表面及直孔通孔的内壁进行刻蚀，形成具有斜锥角的曲线形凹槽；
    该曲线形凹槽的开口尺寸自下而上逐渐减小至蒸镀所需的设计开孔尺 寸；
    步骤7、去除所述上、下光致刻蚀层图案，得到掩膜板；
    其中，所述步骤3中的掩膜材料为镍、或镍铁合金；
    其中，所述步骤3采用电铸工艺，将所述金属基板连接负极，将掩膜材料作为正极，将含有掩膜材料金属离子的溶液作为媒介；
    其中，所述掩膜板的厚度为20微米～100微米；
    其中，所述曲线形凹槽的斜锥角小于63度。
  12. 如权利要求11所述的掩膜板的制作方法，其中，所述掩膜板的厚度为50微米。
  13. 如权利要求11所述的掩膜板的制作方法，其中，所述曲线形凹槽的斜锥角为53度或56度。
  14. 如权利要求11所述的掩膜板的制作方法，其中，所述曲线形凹槽呈倒扣的碗状。
  15. 如权利要求11所述的掩膜板的制作方法，其中，所述掩膜板应用于OLED显示器件中有机电致发光材料的真空热蒸镀。
PCT/CN2015/072552 2014-12-23 2015-02-09 掩膜板的制作方法 Ceased WO2016101396A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410815512.3 2014-12-23
CN201410815512.3A CN104593722B (zh) 2014-12-23 2014-12-23 掩膜板的制作方法

Publications (1)

Publication Number Publication Date
WO2016101396A1 true WO2016101396A1 (zh) 2016-06-30

Family

ID=53119769

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2015/072552 Ceased WO2016101396A1 (zh) 2014-12-23 2015-02-09 掩膜板的制作方法

Country Status (2)

Country Link
CN (1) CN104593722B (zh)
WO (1) WO2016101396A1 (zh)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106410064A (zh) * 2016-11-29 2017-02-15 武汉华星光电技术有限公司 Oled掩模板的制作方法
CN108598281A (zh) * 2018-04-27 2018-09-28 京东方科技集团股份有限公司 掩膜板及其制作方法、显示基板及其封装方法、显示装置
CN111394693A (zh) * 2020-05-13 2020-07-10 杭州纤纳光电科技有限公司 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法
CN111778476A (zh) * 2020-07-14 2020-10-16 京东方科技集团股份有限公司 支撑用掩膜板及制备方法、掩膜板组件
CN113802089A (zh) * 2020-06-12 2021-12-17 上海和辉光电股份有限公司 金属掩膜板
CN113823434A (zh) * 2020-06-19 2021-12-21 中国科学院福建物质结构研究所 一种防散射栅格及其制备方法
CN115692168A (zh) * 2021-07-28 2023-02-03 北京华卓精科科技股份有限公司 掩膜版及其制备方法、半导体结构制备方法及半导体结构
CN115799795A (zh) * 2023-02-08 2023-03-14 河南工学院 太赫兹金属空芯矩形波导腔体海量电铸制造方法
CN115896693A (zh) * 2022-12-23 2023-04-04 京东方科技集团股份有限公司 掩膜板、显示背板、显示装置以及掩膜板的制备方法
CN116200746A (zh) * 2023-02-07 2023-06-02 福建华佳彩有限公司 一种掩膜条的制作方法
CN116949401A (zh) * 2023-08-25 2023-10-27 江苏高光半导体材料有限公司 一种掩膜版制作方法及掩膜版
CN117364016A (zh) * 2023-10-12 2024-01-09 视涯科技股份有限公司 掩膜版及其制作方法
CN117385321A (zh) * 2023-10-12 2024-01-12 视涯科技股份有限公司 一种掩膜版及其制作方法
CN119263198A (zh) * 2024-09-04 2025-01-07 北京量子信息科学研究院 一种用于刻蚀方阵阵列图形的掩膜板及利用其刻蚀方阵阵列图形的方法

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104979495B (zh) * 2015-06-05 2017-03-01 信利（惠州）智能显示有限公司 掩膜板的制作方法
KR20170030685A (ko) * 2015-09-09 2017-03-20 삼성디스플레이 주식회사 증착용 마스크 및 그 제조 방법
CN105177496B (zh) * 2015-09-25 2019-06-04 信利（惠州）智能显示有限公司 掩膜板的制作方法
JP6264523B1 (ja) * 2016-05-23 2018-01-24 凸版印刷株式会社 蒸着用メタルマスク、蒸着用メタルマスクの製造方法、および、蒸着用メタルマスク形成基材
CN108728789B (zh) * 2017-04-14 2020-06-23 上海视欧光电科技有限公司 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
CN106920894B (zh) * 2017-04-28 2020-04-24 陕西科技大学 一种透明oled器件结构及其制备方法
CN108866475A (zh) * 2017-05-16 2018-11-23 上海和辉光电有限公司 掩膜板及其制作方法
CN107119288B (zh) * 2017-05-23 2019-08-02 上海天马有机发光显示技术有限公司 掩膜板及其制作方法
CN107435131B (zh) * 2017-09-29 2019-08-02 上海天马微电子有限公司 掩膜装置、蒸镀设备以及掩膜装置制备方法
CN108517489B (zh) * 2018-04-28 2023-05-12 京东方科技集团股份有限公司 用于oled显示面板蒸镀的掩膜板
CN110158025B (zh) * 2018-05-31 2021-01-26 京东方科技集团股份有限公司 掩膜板的制作方法及掩膜板
CN108866477B (zh) * 2018-07-06 2022-05-13 京东方科技集团股份有限公司 蒸镀掩膜版、其制作方法、蒸镀装置及蒸镀方法
CN108796438B (zh) * 2018-07-24 2021-01-15 京东方科技集团股份有限公司 一种掩膜板的制备方法、掩膜板、蒸镀设备
CN109712879A (zh) * 2018-12-14 2019-05-03 北京遥测技术研究所 一种用于晶圆干法刻蚀工艺的金属掩膜形成方法
WO2022092847A1 (ko) * 2020-10-30 2022-05-05 에이피에스홀딩스 주식회사 증착 마스크
CN114496771B (zh) * 2020-11-11 2024-05-03 长鑫存储技术有限公司 半导体结构的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102591134A (zh) * 2012-03-15 2012-07-18 昆山维信诺显示技术有限公司 掩膜板及其制备方法
CN103388121A (zh) * 2012-05-08 2013-11-13 昆山允升吉光电科技有限公司 一种高精度金属掩模板的混合制作工艺
CN103556150A (zh) * 2013-10-30 2014-02-05 昆山允升吉光电科技有限公司 一种高精度掩模板的制作方法
CN103572206A (zh) * 2013-11-08 2014-02-12 昆山允升吉光电科技有限公司 一种复合掩模板组件的制作方法
CN103589995A (zh) * 2013-10-09 2014-02-19 昆山允升吉光电科技有限公司 一种掩模板的制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10298738A (ja) * 1997-04-21 1998-11-10 Mitsubishi Chem Corp シャドウマスク及び蒸着方法
JP2005179742A (ja) * 2003-12-19 2005-07-07 Seiko Epson Corp マスク、マスクの製造方法、有機エレクトロルミネッセンス装置の製造方法、有機エレクトロルミネッセンス装置、及び電子機器
JP2006152396A (ja) * 2004-11-30 2006-06-15 Sony Corp メタルマスク、電鋳用マスク原版及びマスター原版の製造方法
CN100590232C (zh) * 2005-11-14 2010-02-17 昆山允升吉光电科技有限公司 一种有机发光显示器蒸镀用掩膜的电铸制作方法
KR101182265B1 (ko) * 2009-12-22 2012-09-12 삼성디스플레이 주식회사 증발원 및 이를 포함하는 증착 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102591134A (zh) * 2012-03-15 2012-07-18 昆山维信诺显示技术有限公司 掩膜板及其制备方法
CN103388121A (zh) * 2012-05-08 2013-11-13 昆山允升吉光电科技有限公司 一种高精度金属掩模板的混合制作工艺
CN103589995A (zh) * 2013-10-09 2014-02-19 昆山允升吉光电科技有限公司 一种掩模板的制作方法
CN103556150A (zh) * 2013-10-30 2014-02-05 昆山允升吉光电科技有限公司 一种高精度掩模板的制作方法
CN103572206A (zh) * 2013-11-08 2014-02-12 昆山允升吉光电科技有限公司 一种复合掩模板组件的制作方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106410064A (zh) * 2016-11-29 2017-02-15 武汉华星光电技术有限公司 Oled掩模板的制作方法
CN108598281A (zh) * 2018-04-27 2018-09-28 京东方科技集团股份有限公司 掩膜板及其制作方法、显示基板及其封装方法、显示装置
CN108598281B (zh) * 2018-04-27 2024-03-15 京东方科技集团股份有限公司 掩膜板及其制作方法、显示基板及其封装方法、显示装置
CN111394693A (zh) * 2020-05-13 2020-07-10 杭州纤纳光电科技有限公司 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法
CN113802089A (zh) * 2020-06-12 2021-12-17 上海和辉光电股份有限公司 金属掩膜板
CN113823434B (zh) * 2020-06-19 2023-09-08 中国科学院福建物质结构研究所 一种防散射栅格及其制备方法
CN113823434A (zh) * 2020-06-19 2021-12-21 中国科学院福建物质结构研究所 一种防散射栅格及其制备方法
CN111778476A (zh) * 2020-07-14 2020-10-16 京东方科技集团股份有限公司 支撑用掩膜板及制备方法、掩膜板组件
CN115692168A (zh) * 2021-07-28 2023-02-03 北京华卓精科科技股份有限公司 掩膜版及其制备方法、半导体结构制备方法及半导体结构
CN115896693A (zh) * 2022-12-23 2023-04-04 京东方科技集团股份有限公司 掩膜板、显示背板、显示装置以及掩膜板的制备方法
CN116200746A (zh) * 2023-02-07 2023-06-02 福建华佳彩有限公司 一种掩膜条的制作方法
CN115799795B (zh) * 2023-02-08 2023-04-28 河南工学院 太赫兹金属空芯矩形波导腔体海量电铸制造方法
CN115799795A (zh) * 2023-02-08 2023-03-14 河南工学院 太赫兹金属空芯矩形波导腔体海量电铸制造方法
CN116949401A (zh) * 2023-08-25 2023-10-27 江苏高光半导体材料有限公司 一种掩膜版制作方法及掩膜版
CN116949401B (zh) * 2023-08-25 2025-11-21 江苏高光半导体材料有限公司 一种掩膜版制作方法及掩膜版
CN117364016A (zh) * 2023-10-12 2024-01-09 视涯科技股份有限公司 掩膜版及其制作方法
CN117385321A (zh) * 2023-10-12 2024-01-12 视涯科技股份有限公司 一种掩膜版及其制作方法
CN119263198A (zh) * 2024-09-04 2025-01-07 北京量子信息科学研究院 一种用于刻蚀方阵阵列图形的掩膜板及利用其刻蚀方阵阵列图形的方法

Also Published As

Publication number Publication date
CN104593722A (zh) 2015-05-06
CN104593722B (zh) 2017-06-06

Similar Documents

Publication Publication Date Title
WO2016101396A1 (zh) 掩膜板的制作方法
CN108735915B (zh) 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
CN206033864U (zh) 一种开口掩膜板、掩膜板及基板
CN107435131B (zh) 掩膜装置、蒸镀设备以及掩膜装置制备方法
CN106449717B (zh) 有机电致发光器件基板、显示装置及制造方法
KR20080038650A (ko) 유기 발광 표시 장치의 진공 증착 장치
US20180355468A1 (en) Mask plate, manufacturing method thereof and method of evaporation by using the same
CN109860239B (zh) 阵列基板及其制作方法、显示装置
WO2016074554A1 (zh) 一种像素单元及其制备方法、发光器件、显示装置
WO2020181849A1 (zh) 微型精密掩膜板及其制作方法和amoled显示器件
CN108277454A (zh) 精细掩模板及其制备方法
US12091740B2 (en) Mask sheet and method of manufacturing the same, opening mask and method of using the same, thin film deposition device and display apparatus
KR102501481B1 (ko) 초고해상도 급 증착용 fmm 제조 방법
WO2014169524A1 (zh) 光罩掩模板的制作方法及用该方法制作的光罩掩模板
WO2019041820A1 (zh) 发光层的制造方法、电致发光器件及显示装置
CN115747712A (zh) 掩膜板及其制造方法
CN109301081B (zh) 用于oled蒸镀的荫罩及其制作方法、oled面板的制作方法
CN108628091B (zh) 掩膜板及其制作方法
CN106926559B (zh) 转印基板及其制作方法、oled器件制作方法
TW200307052A (en) Mask and method for producing the same, and method for producing electroluminous device
TW201833389A (zh) 母板、母板的製造方法及遮罩的製造方法
CN106033802A (zh) 一种蒸镀用掩模板及其制作方法
CN100389479C (zh) 掩模及其制造方法、成膜方法、电子器件、以及电子仪器
CN108796439A (zh) 一种掩膜板及其制作方法
CN105336763B (zh) 一种发光显示器及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15871475

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15871475

Country of ref document: EP

Kind code of ref document: A1