CN111394693A - 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法 - Google Patents
掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法 Download PDFInfo
- Publication number
- CN111394693A CN111394693A CN202010403021.3A CN202010403021A CN111394693A CN 111394693 A CN111394693 A CN 111394693A CN 202010403021 A CN202010403021 A CN 202010403021A CN 111394693 A CN111394693 A CN 111394693A
- Authority
- CN
- China
- Prior art keywords
- mask
- layer
- mask plate
- preparation
- carrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000000835 fiber Substances 0.000 claims abstract description 33
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 239000007888 film coating Substances 0.000 claims abstract description 5
- 238000009501 film coating Methods 0.000 claims abstract description 5
- 238000001704 evaporation Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 41
- 230000008020 evaporation Effects 0.000 claims description 36
- 239000000463 material Substances 0.000 claims description 28
- 238000005520 cutting process Methods 0.000 claims description 14
- 230000031700 light absorption Effects 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 7
- 239000011133 lead Substances 0.000 claims description 7
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- -1 methylamino, amidino Chemical group 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910001887 tin oxide Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910003472 fullerene Inorganic materials 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 4
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 claims description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 4
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 claims description 4
- ZTLUNQYQSIQSFK-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=CC=C12 ZTLUNQYQSIQSFK-UHFFFAOYSA-N 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910021595 Copper(I) iodide Inorganic materials 0.000 claims description 3
- 229920001167 Poly(triaryl amine) Polymers 0.000 claims description 3
- 229910001080 W alloy Inorganic materials 0.000 claims description 3
- QSJRLTAPBBPGQN-UHFFFAOYSA-N [Co].[W].[C] Chemical compound [Co].[W].[C] QSJRLTAPBBPGQN-UHFFFAOYSA-N 0.000 claims description 3
- BFMWBLSAZJTDOV-UHFFFAOYSA-N [Fe].[Cu].[Ni].[W] Chemical compound [Fe].[Cu].[Ni].[W] BFMWBLSAZJTDOV-UHFFFAOYSA-N 0.000 claims description 3
- OWUGOENUEKACGV-UHFFFAOYSA-N [Fe].[Ni].[W] Chemical compound [Fe].[Ni].[W] OWUGOENUEKACGV-UHFFFAOYSA-N 0.000 claims description 3
- GAYPVYLCOOFYAP-UHFFFAOYSA-N [Nb].[W] Chemical compound [Nb].[W] GAYPVYLCOOFYAP-UHFFFAOYSA-N 0.000 claims description 3
- LTOKVQLDQRXAHK-UHFFFAOYSA-N [W].[Ni].[Cu] Chemical compound [W].[Ni].[Cu] LTOKVQLDQRXAHK-UHFFFAOYSA-N 0.000 claims description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- PDZKZMQQDCHTNF-UHFFFAOYSA-M copper(1+);thiocyanate Chemical compound [Cu+].[S-]C#N PDZKZMQQDCHTNF-UHFFFAOYSA-M 0.000 claims description 3
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 claims description 3
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000395 magnesium oxide Substances 0.000 claims description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 3
- NQMRYBIKMRVZLB-UHFFFAOYSA-N methylamine hydrochloride Chemical compound [Cl-].[NH3+]C NQMRYBIKMRVZLB-UHFFFAOYSA-N 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 claims description 2
- YWKKLBATUCJUHI-UHFFFAOYSA-N 4-methyl-n-(4-methylphenyl)-n-phenylaniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(C)=CC=1)C1=CC=CC=C1 YWKKLBATUCJUHI-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000640 Fe alloy Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001768 cations Chemical class 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 2
- 229940112669 cuprous oxide Drugs 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 229910003437 indium oxide Inorganic materials 0.000 claims description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052740 iodine Inorganic materials 0.000 claims description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052753 mercury Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Inorganic materials O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 2
- AZQWKYJCGOJGHM-UHFFFAOYSA-N para-benzoquinone Natural products O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 claims description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 claims description 2
- 229910052703 rhodium Inorganic materials 0.000 claims description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004408 titanium dioxide Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 229910052742 iron Inorganic materials 0.000 claims 2
- GNMQOUGYKPVJRR-UHFFFAOYSA-N nickel(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ni+3].[Ni+3] GNMQOUGYKPVJRR-UHFFFAOYSA-N 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 239000011701 zinc Substances 0.000 claims 2
- 239000005751 Copper oxide Substances 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 claims 1
- 229910000431 copper oxide Inorganic materials 0.000 claims 1
- RVPVRDXYQKGNMQ-UHFFFAOYSA-N lead(2+) Chemical compound [Pb+2] RVPVRDXYQKGNMQ-UHFFFAOYSA-N 0.000 claims 1
- 125000000040 m-tolyl group Chemical group [H]C1=C([H])C(*)=C([H])C(=C1[H])C([H])([H])[H] 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims 1
- IUTCEZPPWBHGIX-UHFFFAOYSA-N tin(2+) Chemical compound [Sn+2] IUTCEZPPWBHGIX-UHFFFAOYSA-N 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
- 238000003698 laser cutting Methods 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000000429 assembly Methods 0.000 abstract description 2
- 230000000712 assembly Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 98
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- 239000002346 layers by function Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 229960004643 cupric oxide Drugs 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 238000009210 therapy by ultrasound Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DNTVTBIKSZRANH-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(3-methylphenyl)aniline Chemical compound CC1=CC=CC(C=2C(=CC=C(N)C=2)C=2C=CC(N)=CC=2)=C1 DNTVTBIKSZRANH-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QHJPGANWSLEMTI-UHFFFAOYSA-N aminomethylideneazanium;iodide Chemical compound I.NC=N QHJPGANWSLEMTI-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- OOBPIWAAJBRELM-UHFFFAOYSA-N imidazol-1-yl-(2-methylfuran-3-yl)methanone Chemical compound O1C=CC(C(=O)N2C=NC=C2)=C1C OOBPIWAAJBRELM-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- ISWNAMNOYHCTSB-UHFFFAOYSA-N methanamine;hydrobromide Chemical compound [Br-].[NH3+]C ISWNAMNOYHCTSB-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0605—Carbon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0694—Halides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明涉及一种掩膜板包括框架，在框架内设置掩膜工作区域，在掩膜工作区域内设置多条掩膜线，多条掩膜线将掩膜工作区域分隔成多个镀膜工作区，掩膜线的截面包括金属纤维层和陶瓷层，陶瓷层凸设在金属纤维层的底面；掩膜线的截面为矩形，其宽度为50微米~100微米，其中，金属纤维层的厚度为1微米~100微米，陶瓷层的厚度为1微米~1毫米。本发明还公开一种该掩膜板的制备方法及使用该掩膜板制备光伏组件的方法。本发明具有可重复性高，避免了现有激光切割后组件出现的能量转化效率不稳定的问题，并且节省了昂贵的激光器的成本，为光伏组件的量产提供了有效的解决方案。
Description
技术领域
本发明光伏组件制备技术领域，特别涉及一种掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法。
背景技术
通常制备单个钙钛矿太阳电池不需要使用切割方法，但是为了满足不同的光伏组件输出功率、额定工作电压、电流的要求，我们就需要制备钙钛矿光伏组件，将多个单个的钙钛矿太阳电池组合在一起，并通过使用不同的切割方法，例如激光切割、机械切割等，将N个子单元以串联或并联的方式连接为一个整体。
激光切割是一种高效的分割和组装光伏组件的方法，但由于光伏组件中各功能层对于激光的吸收系数不同，因此难以使用相同的工艺参数对各个功能层同时进行切割清除。当切割参数选择不当时，会致使光伏组件的某些功能层未被清除干净，使切割后的钙钛矿组件部分短路。例如，使用激光切割P3时，由于载流子传输层与顶部的背电极对同一参数下的激光有不同的吸收，因此当底部的载流子传输层被激光清除后，顶部的导电背电极并未被完全清除，会在封装后受到背板的挤压，与底部导电基底接触，形成短路现象。因此，激光切割的方法需要对激光参数进行严格的调控才能找到满足清除各功能层的参数，在很多情况下，对于激光器的精准度也有很高的要求。同时，购买激光器也十分的昂贵，对于组件中多道切割步骤，一台激光器也很难满足多种工艺需求。
使用机械切割也可以将一个完整的光伏组件分割为多个子单元。与激光切割相比，对导电基底和顶部的有机层比较友好，不会发生像激光切割后会导致参数不合适，清除掉底部起电路连接作用的导电层，使电池发生断路的现象。但对于某些硬度较高的材料，机械切割难以清除。
以上两种制备方式各有其优点，但都不是理想的制备光伏组件的方法。对于需要量产商业化的光伏组件需要稳定的、可重复性好的切割加工工艺，因此，亟待开发一种成本低，可重复的工艺方法，克服上述切割方法的缺点。
发明内容
本发明所要解决的技术问题在于，提供一种掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法，使用镀膜板替代现有的激光切割划线P1、P2和P3的步骤，制备出的光伏组件具有稳定的可重复的效率。由于此方法可重复性高，避免了现有激光切割后组件出现的能量转化效率不稳定的问题，并且节省了昂贵的激光器的成本，为光伏组件的量产提供了有效的解决方案。
本发明是这样实现的，提供一种掩膜板，包括框架，在框架内设置掩膜工作区域，在掩膜工作区域内设置多条掩膜线，多条掩膜线将掩膜工作区域分隔成多个镀膜工作区，掩膜线的截面包括金属纤维层和陶瓷层，陶瓷层凸设在金属纤维层的底面；掩膜线的截面为矩形，其宽度为50微米~100微米，其中，金属纤维层的厚度为1微米~100微米，陶瓷层的厚度为1微米~1毫米。
将掩膜线设置为金属纤维层和陶瓷层复合线既增加了掩膜线的强度和刚性，也增加了其与待镀膜基底表面的接触，使得其与待镀膜基底表面需要遮挡的区域紧密贴合，防止镀膜时有机小分子或金属原子钻进未紧密覆盖的区域而影响掩膜效果。
本发明是这样实现的，提供一种如前所述的掩膜板的制备方法，包括如下步骤：采用激光加工方式对框架内设置的金属纤维板进行切割加工，在框架的掩膜工作区域内加工出多条金属纤维线，掩膜工作区域被多条金属纤维线切隔成多个镀膜工作区，再在金属纤维线的下表面制备陶瓷层，即得到含有金属纤维和陶瓷复合层的掩膜线。
本发明的掩膜板的制备方法简单易行，增加了掩膜线的刚性和强度。
本发明是这样实现的，提供一种光伏组件的制备方法，光伏组件的内部结构从下往上依次包括基底、导电层、第一载流子层、吸光层、第二载流子层和背电极层，在光伏组件的制备过程中使用了如前所述的掩膜板，其制备方法包括如下步骤：
步骤一、在基底上覆盖第一掩膜板，然后一起送入溅射腔室中，采用溅射法在基底上制备导电层，制备完成后取下第一掩膜板；
步骤二、在导电层上覆盖第二掩膜板，依次一起送入蒸镀室中采用蒸镀法依次制备第一载流子层、吸光层、第二载流子层，制备完毕后取下第二掩膜板；
步骤三、在第二载流子层上覆盖第三掩膜板，一起送入蒸镀室中采用蒸镀法制备背电极层，制备完毕后取下第三掩膜板即可；
其中，在第一掩膜板上设置n条相互平行的掩膜线，n条掩膜线将掩膜工作区域分隔成n个镀膜工作区，在第二掩膜板上设置2n条相互平行的掩膜线，对应地，在靠近每条第一掩膜板的掩膜线的一侧边分别同时设置两条第二掩膜板的掩膜线，在第三掩膜板上设置n条相互平行的掩膜线，第三掩膜板的掩膜线所在位置与第二掩膜板的离第一掩膜板最远的掩膜线的重合，相当于，在第二掩膜板上同时预留有第三掩膜板的掩膜线的位置。
本发明的光伏组件的制备方法具有稳定性、克重复性高，而且无需激光切割工艺，缩短了制备时间，提高制备效率，制备的光伏组件稳定性高，使用寿命长。
与现有技术相比，本发明的掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法，基于掩膜板的非常细的金属纤维厚度和宽度较低，不具备刚性，难以与光伏组件表面需要遮挡的区域紧密贴合，本发明通过在金属纤维层的上方沉积一层陶瓷层，增加了金属纤维层的厚度和刚性，本发明改进后的掩膜板可以与玻璃或功能层的基底紧密贴合，防止镀膜时有机小分子或金属原子钻进未紧密覆盖的区域而影响掩膜效果。另一方面，使用本发明的掩膜板制备光伏组件具有稳定的可重复的效率，克服了现有激光切割后组件出现的能量转化效率不稳定的问题，并且节省了昂贵的激光器的成本，为光伏组件的量产提供了有效的解决方案。
附图说明
图1为本发明的掩膜板一较佳实施例的立体示意图；
图2为图1剖面示意图；
图3为本发明的第一掩膜板、第二掩膜板和第三掩膜板的掩膜线相对位置对比示意图；
图4为本发明制备的光伏组件内部结构示意图；
图5为采用本发明的掩膜板制备的光伏组件剖面示意图。
具体实施方式
为了使本发明所要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
请同时参照图1以及图2所示，本发明掩膜板的较佳实施例，包括框架1，在框架1内设置掩膜工作区域。在掩膜工作区域内设置多条掩膜线2，多条掩膜线2将掩膜工作区域分隔成多个镀膜工作区3。掩膜线2的截面包括金属纤维层4和陶瓷层5，陶瓷层5凸设在金属纤维层4的底面。陶瓷层5与待镀膜基片的表面抵接，使得陶瓷层5与待镀膜基底表面需要遮挡的区域紧密贴合，防止镀膜时有机小分子或金属原子钻进未紧密覆盖的区域而影响掩膜效果。
掩膜线2的截面为矩形，其宽度为50微米~100微米，其中，金属纤维层4的厚度为1微米~100微米，陶瓷层5的厚度为1微米（um）~1毫米（mm）。
在框架1上设置用于固定待镀膜基片的定位片（图中未示出）。
金属纤维层4的制备材料为铌钨合金、钨碳钴合金、钨镍铁、钨镍铜或钨镍铜铁合金中任意一种，陶瓷层5的制备材料为SiO2、SiC和SiNx中任意一种。
掩膜板的长、宽、高，以及掩膜线2的长度、宽度和厚度，根据所需制备光伏组件的大小来制备。掩膜线2的功能是分隔不同大小的光伏组件的子电池。在图2中，在掩膜板上设置八条掩膜线2，掩膜工作区域分隔成八个镀膜工作区3，制备后的光伏组件设置了八个子电池。
本发明还公开一种如前所述的掩膜板的制备方法，包括如下步骤：采用激光加工方式对框架1内设置的金属纤维板进行切割加工，在框架1的掩膜工作区域内加工出多条金属纤维线，掩膜工作区域被多条金属纤维线切隔成多个镀膜工作区3，再使用等离子体化学气相沉积法在金属纤维线的下表面制备陶瓷层5，即得到含有金属纤维和陶瓷复合层的掩膜线2。
请同时参照图4、图5所示，本发明还公开一种光伏组件的制备方法，光伏组件的内部结构从下往上依次包括基底6、导电层7、第一载流子层8、吸光层9、第二载流子层10和背电极层11，在光伏组件的制备过程中使用了如前所述的掩膜板，其制备方法包括如下步骤：
步骤一、在基底6上覆盖第一掩膜板M1，然后一起送入溅射腔室中，采用溅射法在基底6上制备导电层7，制备完成后取下第一掩膜板M1。
步骤二、在导电层7上覆盖第二掩膜板M2，依次一起送入蒸镀室中采用蒸镀法依次制备第一载流子层8、吸光层9、第二载流子层10，制备完毕后取下第二掩膜板M2。
步骤三、在第二载流子层10上覆盖第三掩膜板M3，一起送入蒸镀室中采用蒸镀法制备背电极层11，制备完毕后取下第三掩膜板M3即可。
请同时参照图3、图5所示，其中，在第一掩膜板M1上设置n条相互平行的掩膜线2，n条掩膜线2将掩膜工作区域分隔成n个镀膜工作区3，每个镀膜工作区3对应为一个光伏组件的子电池，步骤一完成后，在导电层7上被分隔成n个导电薄膜区，相当于第一掩膜板M1在导电层7上得到第一刻划线P1。在第二掩膜板M2上设置2n条相互平行的掩膜线2，对应地，在靠近每条第一掩膜板M1的掩膜线的一侧边分别同时设置两条第二掩膜板M2的掩膜线2，在第三掩膜板M3上设置n条相互平行的掩膜线2，第三掩膜板M3的掩膜线2所在位置与第二掩膜板M2的离第一掩膜板最远的掩膜线2的重合，相当于，在第二掩膜板M2上同时预留有第三掩膜板M3的掩膜线2的位置，也相当于第二掩膜板M2在第二载流子层10上得到第二刻划线P2和第三刻划线P3。
其中，光伏组件包括钙钛矿光伏组件、染料敏化太阳能组件、碲化镉太阳能组件、有机太阳能组件和聚合物太阳能组件中任意一种。
其中，导电层7的厚度为300nm~1um，第一载流子层8的厚度为10nm~500nm，吸光层9的厚度为200nm~500nm，第二载流子层10的厚度为10nm~500nm，背电极层11的厚度为80nm~200nm。
其中，导电层7的制备材料包括氧化锌（ZnO）、氧化铟（In2O3）、氧化锡（SnO2）、掺铝氧化锌、掺铟氧化锌以及氧化铟锡（ITO）中任意一种。
其中，吸光层9为具有ABX3型结构的钙钛矿卤化物晶体，其中，A为甲胺基、甲脒基、铯中任意一种一价阳离子，B为二价的铅离子或亚锡离子，X为卤素Cl、Br、I中任意一种。常用的钙钛矿吸光层9的制备材料包括1H-咪唑-1-基(2-甲基-3-呋喃基)甲酮（C31H26N2O）、碘化甲胺（CH3NH3I）、碘化甲脒（HC(NH2)2I）、溴化甲胺（HC(NH2)2Br）、溴化铅（PbBr2）、碘化铅（PbI2）、氯化铅（PbCI2）氯化甲胺（HC(NH2)2Cl）等。蒸发材料的质量比为1:1~1:3。
其中，背电极层11的制备材料包括铂（Pt）、金（Au）、铜（Cu）、银（Ag）、铝（Al）、铑（Rh)、铟（In）、钛（Ti）、铁（Fe）、镍（Ni）、锡（Sn）、锌（Zn）的金属中的任意一种。
其中，当光伏组件为正型结构时，第一载流子层8的制备材料包括酰亚胺化合物、醌类化合物、富勒烯（C60）及其衍生物、镉（Cd）、锌（Zn）、铟（In）、铅（Pb）、钼（Mo）、钨（W）、锑（Sb）、铋（Bi）、铜（Cu）、汞（Hg）、钛（Ti）、银（Ag）、锰（Mn）、铁（Fe）、钒（V）、锡（Sn）、锆（Zr）、锶（Sr）、镓（Ga）和铬（Cr）的金属氧化物、钛酸锶（SrTiO3）和钛酸钙（CaTiO3）的钙钛矿氧化物、三氧化二铝（Al2O3）、氧化锡（SnO2）、氧化锌镁（MZO）、氧化锌锡（ZnSnO）或二氧化钛（TiO2），以及氟化锂（LiF）、氟化钙（CaF2）、氧化镁（MgO）、五氧化二铌（Nb2O5）和二氧化硅（SiO2）中的任意一种，其制备厚度为100nm~500nm。
第二载流子层10的制备材料包括2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴（Spiro-MeOTAD）、OMeTPA-FA、聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸（PEDOT:PSS）、3-己基取代聚噻吩（P3HT）、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]（PTAA）、4,4'-环己基二[N,N-二(4-甲基苯基)苯胺]（TAPC）、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺（NPB）、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺（TPD）、硫氰化亚铜（CuSCN）、三氧化二镍（Ni2O3）、三氧化二铁（Fe2O3）、EDOT-OMeTPA、CzPAF-SBF、碘化亚铜（CuI）、氧化铜（CuO）、氧化亚铜（Cu2O）、氧化镍（NiO）、氧化钼（MoOx）、聚噻吩（POLYTHIOPHENE）中的至少一种，其制备厚度为10nm~50nm。
其中，当光伏组件为正型结构时，第一载流子层8和第二载流子层10的制备材料及厚度与光伏组件为反型结构的正好相反。
下面结合具体实施例来进一步说明本发明的光伏组件的制备方法。
实施例1
请同时参照图4、图5所示，本发明的使用了如前所述的掩膜板进行光伏组件的制备方法，包括如下步骤：
步骤11、在洗净的高透光白玻基底上覆盖第一掩膜板，然后一起送入溅射腔室中，采用溅射法在基底上制备氧化铟锡（ITO）的导电层，其制备厚度为800nm，制备完成后取下第一掩膜板。
步骤12、在镀好导电层的基底进行清洗，在清洗后的导电层上覆盖第二掩膜板，一起送入蒸镀室中采用蒸镀法制备富勒烯（C60）的第一载流子层，其制备厚度为35nm。
清洗过程包括将基底按顺序置于ITO清洗剂、去离子水、异丙醇中进行超声处理30min，随后将清洗干净的导电玻璃紫外处理10min。
步骤13、再一起送入另一蒸镀室再蒸镀钙钛矿吸光层，蒸发源材料为碘化甲胺（HC（NH2）2I）和碘化铅（PbI2），两种蒸发源材料的质量比为1:3，二者反应生成CH3NH3PbI3钙钛矿吸光层薄膜，其制备厚度为390nm。
步骤14、再一起送入另一蒸镀室再蒸镀第二载流子层，第二载流子层的制备材料为N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺（TPD），其制备厚度为25nm，制备完毕后取下第二掩膜板。
步骤15、在第二载流子层上覆盖第三掩膜板，一起送入另一蒸镀室中采用蒸镀法制备金属金（Au）的背电极层，其制备厚度为100nm。
步骤16、取下第三掩膜板，即得到制备好的光伏组件。
实施例2
请同时参照图4、图5所示，本发明的使用了如前所述的掩膜板进行光伏组件的制备方法的第二种实施例，包括如下步骤：
步骤21、在洗净的高透光白玻基底上覆盖第一掩膜板，然后一起送入溅射腔室中，采用溅射法在基底上制备掺氟氧化锡（FTO）的导电层，其制备厚度为900nm，制备完成后取下第一掩膜板。
步骤22、在镀好导电层的基底进行清洗，在清洗后的导电层上覆盖第二掩膜板，一起送入蒸镀室中采用蒸镀法制备第一载流子层，第一载流子层的制备材料为N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺（NPB），其制备厚度为30nm。
清洗过程包括将基底按顺序置于FTO清洗剂、去离子水、异丙醇中进行超声处理30min，随后将清洗干净的导电玻璃紫外处理10min。
步骤23、再一起送入另一蒸镀室再蒸镀钙钛矿吸光层，蒸发源材料为氯化甲胺（HC（NH2）2Cl）和氯化铅（PbCl2），两种蒸发源材料的质量比为1:3，二者反应生成CH3NH3PbCl3钙钛矿吸光层薄膜，其制备厚度为390nm。
步骤24、再一起送入另一蒸镀室再蒸镀氮化钛（TiN）的第二载流子层，其制备厚度为30nm，制备完毕后取下第二掩膜板。
步骤25、在第二载流子层上覆盖第三掩膜板，一起送入另一蒸镀室中采用蒸镀法制备金属铜（Cu）的背电极层，其制备厚度为120nm。
步骤26、取下第三掩膜板，即得到制备好的光伏组件。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (10)
1.一种掩膜板，其特征在于，包括框架，在框架内设置掩膜工作区域，在掩膜工作区域内设置多条掩膜线，多条掩膜线将掩膜工作区域分隔成多个镀膜工作区，掩膜线的截面包括金属纤维层和陶瓷层，陶瓷层凸设在金属纤维层的底面；掩膜线的截面为矩形，其宽度为50微米~100微米，其中，金属纤维层的厚度为1微米~100微米，陶瓷层的厚度为1微米~1毫米。
2.如权利要求1所述的掩膜板，其特征在于，在框架上设置用于固定待镀膜基片的定位片。
3.如权利要求1所述的掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法，其特征在于，金属纤维层的制备材料为铌钨合金、钨碳钴合金、钨镍铁、钨镍铜或钨镍铜铁合金中任意一种，陶瓷层的制备材料为SiO2、SiC和SiNx中任意一种。
4.一种如权利要求1至3中任意一项所述的掩膜板的制备方法，其特征在于，包括如下步骤：采用激光加工方式对框架内设置的金属纤维板进行切割加工，在框架的掩膜工作区域内加工出多条金属纤维线，掩膜工作区域被多条金属纤维线切隔成多个镀膜工作区，再在金属纤维线的下表面制备陶瓷层，即得到含有金属纤维和陶瓷复合层的掩膜线。
5.一种光伏组件的制备方法，光伏组件的内部结构从下往上依次包括基底、导电层、第一载流子层、吸光层、第二载流子层和背电极层，其特征在于，在光伏组件的制备过程中使用了如权利要求1至3中任意一项所述的掩膜板，其制备方法包括如下步骤：
步骤一、在基底上覆盖第一掩膜板，然后一起送入溅射腔室中，采用溅射法在基底上制备导电层，制备完成后取下第一掩膜板；
步骤二、在导电层上覆盖第二掩膜板，依次一起送入蒸镀室中采用蒸镀法依次制备第一载流子层、吸光层、第二载流子层，制备完毕后取下第二掩膜板；
步骤三、在第二载流子层上覆盖第三掩膜板，一起送入蒸镀室中采用蒸镀法制备背电极层，制备完毕后取下第三掩膜板即可；
其中，在第一掩膜板上设置n条相互平行的掩膜线，n条掩膜线将掩膜工作区域分隔成n个镀膜工作区，在第二掩膜板上设置2n条相互平行的掩膜线，对应地，在靠近每条第一掩膜板的掩膜线的一侧边分别同时设置两条第二掩膜板的掩膜线，在第三掩膜板上设置n条相互平行的掩膜线，第三掩膜板的掩膜线所在位置与第二掩膜板的离第一掩膜板最远的掩膜线的重合，相当于，在第二掩膜板上同时预留有第三掩膜板的掩膜线的位置。
6.如权利要求5所述的光伏组件的制备方法，其特征在于，导电层的厚度为300nm~1um，第一载流子层的厚度为10nm~500nm，吸光层的厚度为200nm~500nm，第二载流子层的厚度为10nm~500nm，背电极层的厚度为80nm~200nm。
7.如权利要求5所述的光伏组件的制备方法，其特征在于，导电层的制备材料包括氧化锌、氧化铟、氧化锡、掺铝氧化锌、掺铟氧化锌以及氧化铟锡中任意一种；吸光层为具有ABX3型结构的钙钛矿卤化物晶体，其中，A为甲胺基、甲脒基、铯中任意一种一价阳离子，B为二价的铅离子或亚锡离子，X为卤素Cl、Br、I中任意一种；背电极层的制备材料包括铂、金、铜、银、铝、铑、铟、钛、铁、镍、锡、锌的金属中的任意一种。
8.如权利要求5所述的光伏组件的制备方法，其特征在于，当光伏组件为正型结构时，第一载流子层的制备材料包括酰亚胺化合物、醌类化合物、富勒烯及其衍生物、镉、锌、铟、铅、钼、钨、锑、铋、铜、汞、钛、银、锰、铁、钒、锡、锆、锶、镓和铬的金属氧化物、钛酸锶和钛酸钙的钙钛矿氧化物、三氧化二铝、氧化锡、氧化锌镁、氧化锌锡或二氧化钛，以及氟化锂、氟化钙、氧化镁、五氧化二铌和二氧化硅中的任意一种，其制备厚度为100nm~500nm；第二载流子层的制备材料包括2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴、OMeTPA-FA、聚(3,4-乙烯二氧噻吩)-聚苯乙烯磺酸、3-己基取代聚噻吩、聚[双(4-苯基)(2,4,6-三甲基苯基)胺]、4,4'-环己基二[N,N-二(4-甲基苯基)苯胺]、N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺、N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺、硫氰化亚铜、三氧化二镍、三氧化二铁、EDOT-OMeTPA、CzPAF-SBF、碘化亚铜、氧化铜、氧化亚铜、氧化镍、氧化钼、聚噻吩中的至少一种，其制备厚度为10nm~50nm；
当光伏组件为正型结构时，第一载流子层和第二载流子层的制备材料及厚度与光伏组件为反型结构的正好相反。
9.如权利要求5所述的光伏组件的制备方法，其特征在于，包括如下步骤：
步骤11、在洗净的高透光白玻基底上覆盖第一掩膜板，然后一起送入溅射腔室中，采用溅射法在基底上制备氧化铟锡的导电层，其制备厚度为800nm，制备完成后取下第一掩膜板；
步骤12、在镀好导电层的基底进行清洗，在清洗后的导电层上覆盖第二掩膜板，一起送入蒸镀室中采用蒸镀法制备富勒烯的第一载流子层，其制备厚度为35nm；
步骤13、再一起送入另一蒸镀室再蒸镀钙钛矿吸光层，蒸发源材料为碘化甲胺和碘化铅，两种蒸发源材料的质量比为1:3，二者反应生成CH3NH3PbI3钙钛矿吸光层薄膜，其制备厚度为390nm；
步骤14、再一起送入另一蒸镀室再蒸镀第二载流子层，第二载流子层的制备材料为N,N'-二苯基-N,N'-二(3-甲基苯基)-1,1'-联苯-4,4'-二胺，其制备厚度为25nm，制备完毕后取下第二掩膜板；
步骤15、在第二载流子层上覆盖第三掩膜板，一起送入另一蒸镀室中采用蒸镀法制备金属金的背电极层，其制备厚度为100nm；
步骤16、取下第三掩膜板，即得到制备好的光伏组件。
10.如权利要求5所述的光伏组件的制备方法，其特征在于，包括如下步骤：
步骤21、在洗净的高透光白玻基底上覆盖第一掩膜板，然后一起送入溅射腔室中，采用溅射法在基底上制备掺氟氧化锡的导电层，其制备厚度为900nm，制备完成后取下第一掩膜板；
步骤22、在镀好导电层的基底进行清洗，在清洗后的导电层上覆盖第二掩膜板，一起送入蒸镀室中采用蒸镀法制备第一载流子层，第一载流子层的制备材料为N,N'-二苯基-N,N'-(1-萘基)-1,1'-联苯-4,4'-二胺，其制备厚度为30nm；
步骤23、再一起送入另一蒸镀室再蒸镀钙钛矿吸光层，蒸发源材料为氯化甲胺和氯化铅，两种蒸发源材料的质量比为1:3，二者反应生成CH3NH3PbCl3钙钛矿吸光层薄膜，其制备厚度为390nm；
步骤24、再一起送入另一蒸镀室再蒸镀氮化钛的第二载流子层，其制备厚度为30nm，制备完毕后取下第二掩膜板；
步骤25、在第二载流子层上覆盖第三掩膜板，一起送入另一蒸镀室中采用蒸镀法制备金属铜的背电极层，其制备厚度为120nm；
步骤26、取下第三掩膜板，即得到制备好的光伏组件。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010403021.3A CN111394693B (zh) | 2020-05-13 | 2020-05-13 | 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010403021.3A CN111394693B (zh) | 2020-05-13 | 2020-05-13 | 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111394693A true CN111394693A (zh) | 2020-07-10 |
| CN111394693B CN111394693B (zh) | 2023-07-04 |
Family
ID=71428130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010403021.3A Active CN111394693B (zh) | 2020-05-13 | 2020-05-13 | 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111394693B (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078267A (zh) * | 2021-03-26 | 2021-07-06 | 电子科技大学 | 一种掺杂三维钙钛矿的准二维钙钛矿太阳能电池及其制备方法 |
| CN115207170A (zh) * | 2022-08-23 | 2022-10-18 | 中节能太阳能科技（镇江）有限公司 | 一种沉积异质结电池铜栅线的方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668056A (zh) * | 2013-12-31 | 2014-03-26 | 信利半导体有限公司 | 一种掩膜板及其制作方法 |
| CN103695842A (zh) * | 2013-12-31 | 2014-04-02 | 信利半导体有限公司 | 一种掩膜板及其制作方法 |
| WO2016101396A1 (zh) * | 2014-12-23 | 2016-06-30 | 深圳市华星光电技术有限公司 | 掩膜板的制作方法 |
| CN107177818A (zh) * | 2017-07-19 | 2017-09-19 | 武汉天马微电子有限公司 | 有机材料蒸镀用掩膜板 |
| CN108588640A (zh) * | 2018-04-25 | 2018-09-28 | 京东方科技集团股份有限公司 | 一种掩膜板、显示器件的制作方法及显示器件 |
| WO2018219155A1 (zh) * | 2017-06-02 | 2018-12-06 | 颜步一 | 一种钙钛矿太阳能电池组件及其制备方法 |
| CN212247178U (zh) * | 2020-05-13 | 2020-12-29 | 杭州纤纳光电科技有限公司 | 一种掩膜板 |
-
2020
- 2020-05-13 CN CN202010403021.3A patent/CN111394693B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103668056A (zh) * | 2013-12-31 | 2014-03-26 | 信利半导体有限公司 | 一种掩膜板及其制作方法 |
| CN103695842A (zh) * | 2013-12-31 | 2014-04-02 | 信利半导体有限公司 | 一种掩膜板及其制作方法 |
| WO2016101396A1 (zh) * | 2014-12-23 | 2016-06-30 | 深圳市华星光电技术有限公司 | 掩膜板的制作方法 |
| WO2018219155A1 (zh) * | 2017-06-02 | 2018-12-06 | 颜步一 | 一种钙钛矿太阳能电池组件及其制备方法 |
| CN107177818A (zh) * | 2017-07-19 | 2017-09-19 | 武汉天马微电子有限公司 | 有机材料蒸镀用掩膜板 |
| CN108588640A (zh) * | 2018-04-25 | 2018-09-28 | 京东方科技集团股份有限公司 | 一种掩膜板、显示器件的制作方法及显示器件 |
| CN212247178U (zh) * | 2020-05-13 | 2020-12-29 | 杭州纤纳光电科技有限公司 | 一种掩膜板 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113078267A (zh) * | 2021-03-26 | 2021-07-06 | 电子科技大学 | 一种掺杂三维钙钛矿的准二维钙钛矿太阳能电池及其制备方法 |
| CN115207170A (zh) * | 2022-08-23 | 2022-10-18 | 中节能太阳能科技（镇江）有限公司 | 一种沉积异质结电池铜栅线的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111394693B (zh) | 2023-07-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101903242B1 (ko) | 페로브스카이트 태양전지 모듈 및 이의 제조방법 | |
| CN111394693B (zh) | 掩膜板和其制备方法及使用该掩膜板制备光伏组件的方法 | |
| US11205735B2 (en) | Low temperature p-i-n hybrid mesoporous optoelectronic device | |
| CN111668375A (zh) | 一种钙钛矿光伏电池及其制备方法和光电组件的制备方法 | |
| CN216980609U (zh) | 钙钛矿太阳能电池 | |
| US20230298826A1 (en) | Multilayer junction photoelectric converter and method for manufacturing multilayer junction photoelectric converter | |
| JP7170831B2 (ja) | 太陽電池素子、および太陽電池素子の製造方法 | |
| CN114695671A (zh) | 钙钛矿太阳能电池及其制备方法、光伏系统 | |
| TWI690099B (zh) | 鈣鈦礦太陽能電池模組的製造方法及鈣鈦礦太陽能電池模組 | |
| US20110011437A1 (en) | Solar cell and method for manufacturing solar cell | |
| CN212247178U (zh) | 一种掩膜板 | |
| US20230019802A1 (en) | Solar cell | |
| CN114665021A (zh) | 一种四端子钙钛矿与晶硅叠层电池组件及其制备方法 | |
| US11943941B2 (en) | Four-terminal tandem solar cell | |
| CN213366623U (zh) | 一种四端子钙钛矿与晶硅叠层电池组件 | |
| CN114864821A (zh) | 一种新型钙钛矿光电组件及其制备方法 | |
| JP6778069B2 (ja) | 太陽電池モジュールおよび太陽電池モジュールの製造方法 | |
| KR100776819B1 (ko) | 동축형 태양전지 및 그 제조방법 | |
| CN216980610U (zh) | 钙钛矿太阳能电池 | |
| US20110023933A1 (en) | Interconnection Schemes for Photovoltaic Cells | |
| JP7507383B2 (ja) | ４端子タンデム太陽電池 | |
| CN117979725B (zh) | 一种钙钛矿晶硅叠层太阳能电池及其制备方法 | |
| CN214123910U (zh) | 一种新型钙钛矿光电组件 | |
| US20220077412A1 (en) | Solar cell module | |
| EP4318604A1 (en) | Thin film photovoltaic devices and method of manufacturing them |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |