WO2016091281A1 - Dispositif de limitation de puissance lors de la commutation d'une charge, agencement de circuit et procédé - Google Patents

Dispositif de limitation de puissance lors de la commutation d'une charge, agencement de circuit et procédé Download PDF

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Publication number
WO2016091281A1
WO2016091281A1 PCT/EP2014/076915 EP2014076915W WO2016091281A1 WO 2016091281 A1 WO2016091281 A1 WO 2016091281A1 EP 2014076915 W EP2014076915 W EP 2014076915W WO 2016091281 A1 WO2016091281 A1 WO 2016091281A1
Authority
WO
WIPO (PCT)
Prior art keywords
load
semiconductor switching
bidirectionally
blocking
switching device
Prior art date
Application number
PCT/EP2014/076915
Other languages
German (de)
English (en)
Inventor
Markus Pfeifer
Yannick Fotsing
Karsten Handt
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to PCT/EP2014/076915 priority Critical patent/WO2016091281A1/fr
Publication of WO2016091281A1 publication Critical patent/WO2016091281A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/005—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection avoiding undesired transient conditions
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/043—Protection of over-voltage protection device by short-circuiting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches

Definitions

  • the invention relates to a device for limiting an alternating current and / or an alternating voltage when switching a load, wherein the device comprises a switching device for switching the alternating voltage and / or the alternating current in a switching phase and a bridging device for bridging the switching device in an operating phase.
  • the invention also relates to a circuit arrangement and a method.
  • soft starters are usually used by means of which a targeted start-up current reduction and a continuous increase in torque can be realized.
  • Such soft starters usually comprise two antiparallel-connected thyristors or a triac.
  • Phase control of both thyristors, the motor voltage and / or a motor current is slowly raised within an adjustable start-up time and thus regulated the starting current and the torque.
  • the triac After a zero crossing of the alternating voltage or the alternating current, the triac does not conduct the starting current until the triac receives a renewed ignition pulse.
  • the load for example the motor, is supplied with the alternating current and / or the alternating voltage until the next zero crossing. from that
  • the alternating current or the starting current can be switched off only at a zero crossing of the alternating current and / or the alternating voltage.
  • the thyristors are usually connected by means of semiconductor relays or by-pass
  • An inventive device is used to limit an alternating current and / or an alternating voltage when switching a load.
  • the device has a switching device for switching the alternating voltage and / or the alternating current in a switching phase and a bridging device for bridging the switching device in an operating phase.
  • the switching device comprises a bidirectionally barrier-capable semiconductor switching device, which is designed to switch off the AC voltage and / or the AC independently of a current phase angle of the AC voltage and / or the AC current.
  • the device has a protective circuit device for bridging the bidirectionally blocking-capable semiconductor switching device from a predetermined overvoltage in the switching phase.
  • the device which is also referred to below as a solid-state switch, so a load with, for example, provided by an energy source, electrical energy can be supplied.
  • the bidirectional blocking semiconductor switching device In a switching phase, so when switching on and / or off the load, the bidirectional blocking semiconductor switching device can be operated pulsed, whereby the AC or starting current supplied to the load can be switched on and off at any time.
  • the bidirectionally breakable semiconductor switching device can switch on and off the load current independently of a current phase of the alternating current and / or the alternating voltage. This means, in particular, that the bidirectionally non-conductive semiconductor switching device is designed to provide a
  • Alternating current and / or an alternating voltage in contrast to a triac, also switch off outside of a zero crossing of the alternating current and / or the alternating voltage.
  • an energy flow to the load can be interrupted immediately by immediate opening of the bidirectionally inhibitable semiconductor switching device.
  • the device or the solid-state switch can be operated in the continuous phase or in continuous operation.
  • the bidirectional lockable is
  • the bridging device can be used as a mechanical switch, for example as a power switch. lais, be executed. As a result, a load current can be conducted via the bridging device past the bidirectionally blocking-capable semiconductor switching device to the load.
  • a designed as a mechanical switch bridging device generally has lower Maiswider states as a semiconductor switching device. This results in the advantage that in continuous operation of the Vorrichtun the power loss in the bidirectional blocking semiconductor switching device is reduced and thus heating of the solid-state switch is reduced.
  • Said protective circuit device is designed to bridge the bidirectionally barrier-capable semiconductor switching device from a predetermined overvoltage, which can lead to destruction or damage to the bidirectionally blocking-capable semiconductor switching device.
  • overvoltages which are also referred to as voltage peaks, can occur, for example, when switching off inductive loads.
  • a control device may be provided.
  • the bidirectionally barrier-capable semiconductor switching device is designed to switch off a short circuit immediately, the device is designed particularly short-circuit proof.
  • the bidirectionally barrier-capable semiconductor switching device has an antiserial circuit of two IGBTs.
  • An IGBT insulated gate bipolar transistor
  • An IGBT is a bipolar transistor with an insulated control electrode, a so-called gate electrode, and combines the advantages of a bipolar transistor, namely a good on-state behavior and a high blocking voltage, with the advantages of a bipolar transistor Field effect transistor, namely the almost powerless control.
  • the bidirectionally non-conductive semiconductor switching device is designed for switching alternating currents and / or alternating voltages.
  • IGBTs are operated pulsed, a switching on and off of the IGBTs is possible at any time, that is independent of a current phase angle of the alternating current and / or the alternating voltage and thus closing and opening the bidirectional Sperrstateen Halbleiterschaltein- direction possible.
  • the bidirectionally breakable semiconductor switching device on an anti-parallel connection of two backward blocking IGBTs.
  • Backward blocking IGBTs so-called RB-IGBTs
  • the semiconductor switching device is advantageously designed to block alternating current.
  • it is possible to dispense with a freewheeling diode, which is necessary in the case of non-backward blocking IGBTs for realizing a reverse blocking capability. This leads above all to a reduction of the switching losses.
  • the device is thus particularly low loss and designed to save on components.
  • the bidirectionally blocking-capable semiconductor switching device has an antiserial circuit of two power MOSFETs.
  • Power MOSFETs also referred to as DMOS field effect transistors, have a vertical construction, unlike MOSFETs used in integrated circuits, for example, and are designed to conduct and block large currents and voltages. Power MOSFETs have particularly fast switching times.
  • the bidirectionally blocking-capable semiconductor switching device has an antiserial circuit of two junction field-effect transistors.
  • barrier layer Field effect transistors or JFETs Junction Field Effect Transistor are particularly easy to manufacture.
  • the said protective circuit device is designed to bridge the bidirectionally barrier-capable semiconductor switching device as of a breakdown voltage of the bidirectionally blocking-capable semiconductor switching device as the predetermined overvoltage. While a blocking voltage is present across the bidirectionally blocking-capable semiconductor switching device, the bidirectionally blocking-capable semiconductor switching device is in a blocking operation and can block a load current from the energy source to the load. In particular, only a small reverse current flows.
  • the said overvoltage, at which the protective circuit device turns on corresponds to the breakdown voltage of the bidirectionally blocking-capable semiconductor switching device or exceeds the breakdown voltage, a so-called breakdown can not occur in which the
  • the protective circuit device is designed to bridge the bidirectionally barrier-capable Halbleiterschaltein- direction by passing, for example, caused by the overvoltage overcurrent of the bidirectional blocking semiconductor switching device.
  • the protective circuit device preferably has a varistor for this purpose.
  • Resistor is a voltage-dependent resistor whose dif ferential resistance abruptly decreases from a certain threshold voltage.
  • the varistor is in particular dimensioned such that its differential resistance is abruptly smaller than the predetermined overvoltage as the threshold voltage. As soon as the predetermined overvoltage and thus the threshold voltage at the varis connected in parallel with the bidirectionally inhibitable semiconductor switching device gate is applied, a current flow is passed to the bidirectional blocking semiconductor switching device over the varistor.
  • Varistors have short response times and can also limit very short-term overvoltage nondestructively.
  • the protective circuit device has an RC element.
  • An RC element comprises a series connection of a resistor and a capacitor.
  • a protective circuit with an RC element is particularly well suited for alternating voltages and / or alternating currents, since a damping of high-frequency voltage peaks can be effected bidirectionally by the capacitor.
  • the protective circuit device has a gas absorber.
  • Gas ablators are gas discharge tubes which are used as surge arresters.
  • the Gasabieiter which is connected in parallel to the bidirectional blocking semiconductor switching device, behaves below an ignition voltage, which is adapted in the context of the invention, in particular to the predetermined overvoltage, such as an insulator and thus does not affect the bidirectional blocking semiconductor switching device in an advantageous manner.
  • the predetermined overvoltage is applied to the gas absorber, it ignites and passes an overcurrent caused by the overvoltage almost completely past the bidirectionally inhibitable semiconductor switching device.
  • the described protective circuit devices are in particular self-disconnecting, e.g. lock them if the voltage drops below the overvoltage.
  • the invention also includes a circuit arrangement with a load, a control device and at least one device according to the invention.
  • a polyphase electrical line may be provided and a device of the type described may be present in each phase.
  • the Load is electrically connected to the at least one device and the control device is designed to control the respective bidirectionally barrier-capable semiconductor switching device of the at least one device and / or the respective bridging device of the device for opening and / or closing.
  • the load can be an inductive, an ohmic or a capacitive load.
  • An inductive load may be, for example, a three-phase asynchronous machine which can be supplied with three-phase alternating current or three-phase alternating current via three phases or three conductors, wherein each of the three phases can each have a device according to the invention.
  • the invention comprises a method for limiting an alternating current and / or an alternating voltage when switching a load.
  • a bidirectionally inhibitable semiconductor switching device When the load is switched on, a bidirectionally inhibitable semiconductor switching device is closed and then bridged by a bridging device and thus the load is operated in an operating phase.
  • the bridging device is bridged by the bidirectionally blocking-capable semiconductor switching device, then the bridging device is opened to terminate the operating phase and the bidirectionally blocking-capable semiconductor switching device is blocked for momentary-phase angle-independent blocking of the alternating current and / or the alternating voltage.
  • the bidirectionally barrier-capable semiconductor switching device can, for example, be operated pulsed, so that an alternating current and / or an alternating voltage is limited when the load is switched on. If, for example, a short circuit occurs or occurs during the switching on of the load, the bidirectionally breakable semiconductor switching device can block the alternating current and / or the alternating voltage independently of a momentary phase, ie from a current phase angle of the alternating current and / or the alternating voltage. Once the load with a predetermined operating voltage and / or a predetermined operating current is supplied, the load can be operated in the operating phase.
  • the bidirectionally barrier-capable semiconductor switching device is bridged by the bridging device, which may be designed, for example, as a mechanical switch.
  • a mechanical switch connected in parallel with the bidirectionally inhibitable semiconductor switching device can be closed as a bridging device.
  • the bidirectionally disabling semiconductor switching device can be opened, so that the alternating current and / or the alternating voltage is conducted to the load only via the bridging device.
  • the bridging device is bridged by the bidirectionally blocking-capable semiconductor switching device.
  • the bidirectionally barrier-capable semiconductor switching device is closed, while the bridging device is still closed.
  • the bridging device is opened, as a result of which the alternating current and / or the alternating voltage is conducted via the bidirectionally blocking-capable semiconductor switching device.
  • a bridging device designed as a mechanical switch an arc is thus avoided or an arc duration reduced when the mechanical switch is opened.
  • the bidirectionally barrier-capable semiconductor switching device is also opened, whereby no AC and / or no AC voltage is fed to the load.
  • the bidirectionally blocking-capable semiconductor switching device can be bypassed by a protective circuit device when a predetermined overvoltage occurs.
  • FIG. 1 shows a schematic representation of an embodiment of a device according to the invention
  • FIG. 2 shows a schematic illustration of a further embodiment of a device according to the invention
  • Fig. 3 is a schematic representation of an embodiment of a circuit arrangement according to the invention.
  • 4 shows a schematic illustration of a further embodiment of a circuit arrangement according to the invention.
  • FIG. 5 shows a schematic illustration of the switching characteristics within an embodiment of the device according to the invention when a short circuit occurs during a switch-on phase of a load
  • FIG. 6 shows a schematic representation of the switching characteristics within an embodiment of the device according to the invention when a short circuit occurs during an operating phase of a load.
  • Fig. 1 shows a device 1 for limiting an alternating current and / or an alternating voltage when switching a load, not shown here.
  • the device 1 constitutes a solid-state switch and comprises a bidirectionally blocking-capable semiconductor switching device 2, a protective circuit device 3 connected in parallel with the bidirectionally-blocking semiconductor switching device 2 and a bypass device 4 connected in parallel with the bidirectionally-blocking semiconductor switching device 2 and the protective circuit device 3.
  • the bidirectional blocking semiconductor switching device 2 here comprises an antiserial circuit of a first IGBT 5 and a second IGBT 6.
  • Each of the IGBTs 5 and 6 has a control terminal or a gate terminal G, via which the IGBTs 5 and 6 can be controlled.
  • the gate terminal G may for example be connected to a driver circuit or control device, not shown here, which is designed to turn on and / or off the respective IGBT 5 and 6. Since IGBTs are usually limited in the reverse direction only limited, here between an emitter terminal E and a collector terminal C of each of the IGBTs 5 and 6 is provided in each case a freewheeling diode FD, which conducts in the reverse direction.
  • the bidirectionally breakable semiconductor switching device 2 is closed, that is, the IGBTs 5 and 6 are turned on, an alternating current and / or an alternating voltage can be applied across the bidirectionally breakable semiconductor switching device 2 are performed.
  • the protective circuit device 3 is designed here as a varistor and is designed to bridge the bidirectionally barrier-capable semiconductor switching device 2 from a predetermined overvoltage, which may occur, for example, as a so-called voltage peak when switching off an inductive load. While the bidirectionally breakable semiconductor switching device 2 is bridged by the protective circuit device 3, a current caused by the predetermined overvoltage can be conducted past the protective circuit device 3 to the bidirectionally inhibitable semiconductor switching device 2. Further possibilities for overvoltage limiting are so-called active clamping or monitoring of the collector-emitter voltage (U CE ) of the IGBTs 5 and 6.
  • the bridging device 4 is designed here as a relay or as bypass contacts and serves to bridge the bidirectionally blocking-capable semiconductor switching device 2 in an operating phase of the load. While the bidirectionally barrier-capable semiconductor switching device 2 is bridged by the bridging device 4, the alternating current for supplying the load or the load current can be passed over the bridging device 4 to the bidirectional blocking semiconductor switching device 2.
  • FIG. 2 shows a further embodiment of a device 1 according to the invention.
  • the bidirectionally barrier-capable semiconductor switching device 2 here has a parallel connection of a first backward blocking IGBT (RB-IGBT) 7 and a second backward blocking IGBT 8.
  • RB-IGBT backward blocking IGBT
  • IGBT 8 the freewheeling diodes FD according to FIG. 1 can be dispensed with.
  • Fig. 3 shows an embodiment of a circuit arrangement 9 according to the invention with a load M.
  • the load M is here exemplified by an asynchronous three-phase machine.
  • the load M is operated via three phases or conductors LI, L2, L3 with a three-phase alternating current.
  • Each of the three conductors LI, L2, L3 has in each case a device 1, via which the load M is supplied with an alternating voltage and / or an alternating current.
  • Each of the devices 1 here has a bidirectionally barrier-capable semiconductor switching device 2 according to FIG. To switch on the load M, eg to start up the
  • the bidirectional breakable semiconductor switching device 2 is first closed by at least two of the three conductors LI, L2, L3.
  • the IGBTs 5 and 6 of the respective bidirectionally blocking-capable semiconductor switching device 2 can be driven pulsed to a
  • Soft start of the load M to enable.
  • a control device not shown here may be provided.
  • the bridging device 4 is galvanically isolated from the load M. If a short-circuit occurs during turn-on of the load M, the bidirectionally breakable semiconductor switching device 2 can be opened immediately, ie independently of a current phase of the alternating current and / or the alternating voltage, and the load M thereby switched off. An overvoltage occurring when switching off can be limited by the protective circuit device 3.
  • the bidirectionally barrier-capable semiconductor switching device 2 can be bridged by the respective bridging device 4. After bridging the respective bidirectionally blocking-capable semiconductor switching device 2, this can be opened, that is, switched to a blocking state.
  • the load M is now operated in an operating phase and is only activated via the respective bridging direction 4 supplied with the alternating current and / or the alternating voltage.
  • the respective bi-directional blocking semiconductor switching device 2 is closed again, ie the IGBTs 5 and 6 are turned on. Subsequently, the respective bridging device 4 is galvanically separated from the load M.
  • a bridging device 4 designed as a relay during the opening of the relay, contact resistances at the respective relay rise in such a way that the respective IGBTs 5 and 6, ie the bidirectionally nonconductive semiconductor switching device 2, take over the carrying of the alternating current. As a result, the relay is switched off and there is no arc.
  • the respective IGBTs 5 and 6 are turned off.
  • the circuit 9 surges or so-called voltage peaks can arise, which can be limited by the respective protective circuit device 3.
  • FIG. 4 shows a further embodiment of a circuit arrangement 9 according to the invention, in which the three conductors L 1, L 2, L 3 have a device 1 according to FIG. 2.
  • FIG. 5 shows switching characteristics 10 and 11 of the bridging device 4 and the bidirectionally inhibitable semiconductor switching device 2 when a short circuit 12 occurs during a switch-on phase 13 of the load M.
  • the switching curve 10 corresponds to the switching curve of the bridging device 4 and the switching curve 11 corresponds to the switching curve of FIG bidirectionally blocking semiconductor switching device 2.
  • the switching curves 10 and 11 are plotted over the time t.
  • a respective switching state "1" means that the bidirectional blocking semiconductor switching device 2 or the bridging device 4 is closed.
  • a respective switching state "0" means that the bidirectionally barrier-capable semiconductor switching device 2 or the bridging device 4 is open
  • Semiconductor switching device 2 is closed to switch on the load M, that is to say into the switching state "1.”
  • the bridging device 4 is opened during the switch-on phase 13, thus has the switching state "0".
  • the alternating current and / or the alternating voltage is thus conducted to the load M only via the bidirectionally non-conductive semiconductor switching device 2.
  • the bidirectionally barrier-capable semiconductor switching device 2 is opened, that is to say placed in the switching state "0"
  • the bridging device 4 remains open, so that a flow of the alternating current to the load M is interrupted.
  • FIG. 6 shows the switching characteristics 10 and 11 of the bridging device 4 and of the bidirectionally inhibitable semiconductor switching device 2 during the occurrence of the short circuit 12 during an operating phase 14 of the load M over the time t.
  • the bi-directionally blocking-capable semiconductor switching device 2 is closed in the switch-on phase 13, that is, in the switching state "1", between times t 1 and .2
  • the lock-up device 4 is closed, so also in the switching state "1" offset.
  • the load M is in the operating phase. 14.
  • both the bidirectionally blocking-capable semiconductor switching device 2 and the bridging device 4 remain in the closed state.
  • the bidirectionally blocking-capable semiconductor switching device 2 is opened, that is to say placed in the switching state "0", while the bridging device 4 remains closed, ie the alternating current is only conducted to the load M via the bridging device 4.
  • the short-circuit 12 occurs
  • the bidirectionally breakable semiconductor switching device 2 is closed, that is put into the switching state "1”.
  • the bridging device 4 remains closed until a time t 5 in addition to the bidirectionally disabling semiconductor switching device 2 and is opened at time t 5 .
  • the alternating current is only passed through the bidirectional blocking semiconductor switching device 2, which is also opened at the time te. From the time te, the load M is no longer supplied with the alternating current and / or the alternating voltage.

Abstract

L'invention concerne un dispositif (1) destiné à limiter un courant alternatif et/ou une tension alternative lors de la commutation d'une charge (M). Le dispositif (1) comporte un moyen de commutation destiné à commuter la tension alternative et/ou le courant alternatif dans une phase de commutation et un moyen de pontage (4) destiné à ponter le moyen de commutation dans une phase d'actionnement (14) de la charge (M). Le moyen de commutation comprend un moyen de commutation à semi-conducteur (2) à blocage bidirectionnel qui est adapté pour couper la tension alternative et/ou le courant alternatif indépendamment de l'angle de phase instantanée de la tension alternative et/ou du courant alternatif, et le dispositif (1) comporte un moyen de circuit de protection (3) destiné à ponter le moyen de commutation à semi-conducteur à blocage bidirectionnel (2) à partir d'une surtension prédéterminée dans la phase de commutation.
PCT/EP2014/076915 2014-12-08 2014-12-08 Dispositif de limitation de puissance lors de la commutation d'une charge, agencement de circuit et procédé WO2016091281A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/076915 WO2016091281A1 (fr) 2014-12-08 2014-12-08 Dispositif de limitation de puissance lors de la commutation d'une charge, agencement de circuit et procédé

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/076915 WO2016091281A1 (fr) 2014-12-08 2014-12-08 Dispositif de limitation de puissance lors de la commutation d'une charge, agencement de circuit et procédé

Publications (1)

Publication Number Publication Date
WO2016091281A1 true WO2016091281A1 (fr) 2016-06-16

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018046653A1 (fr) 2016-09-12 2018-03-15 Phoenix Contact Gmbh & Co. Kg Système photovoltaïque, dispositif de commutation hybride de courant continu, utilisation et procédé pour la connexion et la déconnexion d'une chaîne photovoltaïque
DE102017107801A1 (de) 2017-04-11 2018-10-11 Phoenix Contact Gmbh & Co. Kg Photovoltaik-Anlage, Gleichstrom-Hybrid-Schalteinrichtung, Verwendung und Verfahren zum An-und Abschalten eines Photovoltaik-Strangs
DE102017108507A1 (de) 2017-04-21 2018-10-25 Phoenix Contact Gmbh & Co. Kg Photovoltaik-Anlage, Schutzschaltung und Verfahren zum selbständigen Abschalten eines Photovoltaik-Strangs
US20220158437A1 (en) * 2019-01-31 2022-05-19 Siemens Aktiengesellschaft Connecting a load to a direct current network

Citations (4)

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Publication number Priority date Publication date Assignee Title
WO2002005411A1 (fr) * 2000-07-11 2002-01-17 Siemens Ag Österreich Circuit de protection pour pont thyristor commute par le reseau
DE10118743A1 (de) * 2001-04-17 2002-10-24 Siemens Ag Verfahren zum Überstromschutz eines steuerbaren Halbleiterschalters und zugehörige Schaltung
JP2009081969A (ja) * 2007-09-27 2009-04-16 Fuji Electric Holdings Co Ltd 双方向スイッチ
WO2010022750A1 (fr) * 2008-08-27 2010-03-04 Maschinenfabrik Reinhausen Gmbh Commutateur à gradins pourvu d'éléments de commutation à semi-conducteur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002005411A1 (fr) * 2000-07-11 2002-01-17 Siemens Ag Österreich Circuit de protection pour pont thyristor commute par le reseau
DE10118743A1 (de) * 2001-04-17 2002-10-24 Siemens Ag Verfahren zum Überstromschutz eines steuerbaren Halbleiterschalters und zugehörige Schaltung
JP2009081969A (ja) * 2007-09-27 2009-04-16 Fuji Electric Holdings Co Ltd 双方向スイッチ
WO2010022750A1 (fr) * 2008-08-27 2010-03-04 Maschinenfabrik Reinhausen Gmbh Commutateur à gradins pourvu d'éléments de commutation à semi-conducteur

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018046653A1 (fr) 2016-09-12 2018-03-15 Phoenix Contact Gmbh & Co. Kg Système photovoltaïque, dispositif de commutation hybride de courant continu, utilisation et procédé pour la connexion et la déconnexion d'une chaîne photovoltaïque
WO2018046654A1 (fr) 2016-09-12 2018-03-15 Phoenix Contact Gmbh & Co. Kg Système photovoltaïque, circuit de protection et procédé de mise à l'arrêt autonome d'une chaîne photovoltaïque
US11538943B2 (en) 2016-09-12 2022-12-27 Phoenix Contact Gmbh & Co. Kg Photovoltaic system, direct current hybrid switching device, use and method for switching a photovoltaic string on and off
DE102017107801A1 (de) 2017-04-11 2018-10-11 Phoenix Contact Gmbh & Co. Kg Photovoltaik-Anlage, Gleichstrom-Hybrid-Schalteinrichtung, Verwendung und Verfahren zum An-und Abschalten eines Photovoltaik-Strangs
DE102017108507A1 (de) 2017-04-21 2018-10-25 Phoenix Contact Gmbh & Co. Kg Photovoltaik-Anlage, Schutzschaltung und Verfahren zum selbständigen Abschalten eines Photovoltaik-Strangs
US20220158437A1 (en) * 2019-01-31 2022-05-19 Siemens Aktiengesellschaft Connecting a load to a direct current network
US11876365B2 (en) * 2019-01-31 2024-01-16 Siemens Aktiengesellschaft Connecting a load to a direct current network

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