WO2016086506A1 - 在复合玻璃基板上制造视频显示板用多色led的方法 - Google Patents
在复合玻璃基板上制造视频显示板用多色led的方法 Download PDFInfo
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- WO2016086506A1 WO2016086506A1 PCT/CN2015/000839 CN2015000839W WO2016086506A1 WO 2016086506 A1 WO2016086506 A1 WO 2016086506A1 CN 2015000839 W CN2015000839 W CN 2015000839W WO 2016086506 A1 WO2016086506 A1 WO 2016086506A1
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- Prior art keywords
- color
- layer
- glass substrate
- masking layer
- color led
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- 239000011521 glass Substances 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000002131 composite material Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 230000000873 masking effect Effects 0.000 claims abstract description 78
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- 238000000227 grinding Methods 0.000 claims abstract description 3
- 238000012360 testing method Methods 0.000 claims abstract description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 27
- 238000001459 lithography Methods 0.000 claims description 6
- 238000005240 physical vapour deposition Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 150000002902 organometallic compounds Chemical group 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 9
- 239000003086 colorant Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 241001422033 Thestylus Species 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000005401 pressed glass Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
Definitions
- FIG. 1 is a flow chart of a method for manufacturing a multi-color LED for a video display panel on a composite glass substrate according to an embodiment of the present invention.
- the preparation method of the three-color LED is taken as an example for description. Those skilled in the art can know from the description of the present invention that the method of the present invention can be simplified or repeated local process to obtain a single color and two colors. , or a method of preparing a multi-color LED of three or more colors.
- the preparation of the second masking layer specifically includes:
- the deposition method of the epitaxial layer can be realized in the same manner as MOCVD.
- the invention provides a method for manufacturing a multi-color LED for a video display panel on a composite glass substrate, wherein an epitaxial layer of different colors is sequentially selected by using a masking layer to form LEDs of different colors in different regions of the composite glass substrate.
- the method provided by the invention is simple, easy to operate and low in cost, and is suitable for large-scale production application.
- the epitaxial growth of a plurality of same-color LEDs can be completed at one time on the composite glass substrate to form an LED display module, thereby effectively ensuring the LED
- the consistency between the LED chips of each color of the display module ensures a consistent display effect, and the stability of the LED display panel Mean Time Between Failure (MTBF) is 100,000 hours. And trustworthiness.
- MTBF Mean Time Between Failure
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (7)
- 一种在复合玻璃基板上制造视频显示板用多色LED的方法,其特征在于,所述方法包括:在复合玻璃基板上制备第一掩蔽层,所述第一掩蔽层用于掩蔽除第一颜色LED生长区域之外的其它区域;在所述第一颜色LED生长区和第一掩蔽层上淀积第一颜色外延层,形成第一颜色LED;所述第一颜色外延层包括第一颜色N型外延层和第一颜色P型外延层;去除所述第一掩蔽层和所述第一掩蔽层上的第一颜色外延层;制备第二掩蔽层,所述第二掩蔽层用于掩蔽除第二颜色LED生长区域之外的其它区域;在所述第二颜色LED生长区和第二掩蔽层上淀积第二颜色外延层,形成第二颜色LED;所述第二颜色外延层包括第二颜色N型外延层和第二颜色P型外延层;去除所述第二掩蔽层和所述第二掩蔽层上的第二颜色外延层;对所述复合玻璃基板的表面进行研磨,清洗和电学测试。
- 根据权利要求1所述的方法,其特征在于,所述复合玻璃基板包括:玻璃基板和容置于所述玻璃基板一侧的磊晶衬片;所述第一掩蔽层、第二掩蔽层和第三掩蔽层均制备与所述磊晶衬片一侧。
- 根据权利要求2所述的方法,其特征在于,所述磊晶衬片包括:SiC衬片、Al2O3衬片或GaAs衬片中的任一种。
- 根据权利要求2所述的方法,其特征在于,所述在复合玻璃基板上制备第一掩蔽层具体包括:在所述复合玻璃基板上物理气相沉积SiO2;对所述SiO2进行台阶Mesa光刻,露出所述第一颜色LED生长区的SiO2;对所述第一颜色LED生长区的SiO2进行刻蚀,用以在所述第一颜色LED 生长区内露出所述磊晶衬片。
- 根据权利要求2所述的方法,其特征在于,所述制备第二掩蔽层具体包括:在所述复合玻璃基板上物理气相沉积SiO2;对所述SiO2进行台阶Mesa光刻,露出所述第二颜色LED生长区的SiO2;对所述第二颜色LED生长区的SiO2进行刻蚀,用以在所述第二颜色LED生长区内露出所述磊晶衬片。
- 根据权利要求1所述的方法,其特征在于,所述淀积具体为:采用金属有机化合物化学气相沉淀MOCVD的方法,进行外延层生长。
- 根据权利要求1所述的方法,其特征在于,在所述对所述复合玻璃基板的表面进行研磨,清洗和电学测试之前,所述方法还包括:制备第三掩蔽层,所述第三掩蔽层用于掩蔽除第三颜色LED生长区域之外的其它区域;在所述第三颜色LED生长区和第三掩蔽层上淀积第三颜色外延层,形成第三颜色LED;所述第三颜色外延层包括第三颜色N型外延层和第三颜色P型外延层;去除所述第三掩蔽层和所述第三掩蔽层上的第三颜色外延层。
Priority Applications (1)
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US15/028,228 US9698302B2 (en) | 2014-12-02 | 2015-12-02 | Method for manufacturing on compound glass substrate multi-colored LED for use in video display board |
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CN201410724871.8A CN105720136B (zh) | 2014-12-02 | 2014-12-02 | 在复合玻璃基板上制造视频显示板用多色led的方法 |
CN201410724871.8 | 2014-12-02 |
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PCT/CN2015/000839 WO2016086506A1 (zh) | 2014-12-02 | 2015-12-02 | 在复合玻璃基板上制造视频显示板用多色led的方法 |
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CN (1) | CN105720136B (zh) |
WO (1) | WO2016086506A1 (zh) |
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CN115863497B (zh) * | 2023-02-20 | 2023-05-23 | 镭昱光电科技(苏州)有限公司 | MicroLED显示器件及其制备方法 |
Citations (4)
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CN2713508Y (zh) * | 2004-07-27 | 2005-07-27 | 比亚迪股份有限公司 | 一种单色和区域多色液晶显示板 |
WO2009066791A1 (en) * | 2007-11-22 | 2009-05-28 | Canon Kabushiki Kaisha | Multicolor display apparatus |
CN101840929A (zh) * | 2010-03-15 | 2010-09-22 | 信利半导体有限公司 | 一种区域多色有机电致发光显示器及其制造方法 |
CN102681281A (zh) * | 2011-03-17 | 2012-09-19 | 凸版印刷株式会社 | 多色显示板 |
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TW393785B (en) * | 1997-09-19 | 2000-06-11 | Siemens Ag | Method to produce many semiconductor-bodies |
CN2681266Y (zh) * | 2003-03-12 | 2005-02-23 | 新知科技股份有限公司 | 发光二极管显示装置 |
FR2861853B1 (fr) * | 2003-10-30 | 2006-02-24 | Soitec Silicon On Insulator | Substrat avec adaptation d'indice |
US7514859B2 (en) * | 2004-12-20 | 2009-04-07 | Hewlett-Packard Development Company, L.P. | Ultraviolet emitter display apparatus |
US20080124823A1 (en) * | 2006-11-24 | 2008-05-29 | United Microdisplay Optronics Corp. | Method of fabricating patterned layer using lift-off process |
JP2008166381A (ja) * | 2006-12-27 | 2008-07-17 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
CN101355118A (zh) * | 2007-07-25 | 2009-01-28 | 中国科学院半导体研究所 | 光学复合膜作电极的GaN功率型LED的制备方法 |
US20090032490A1 (en) * | 2007-08-02 | 2009-02-05 | United Microelectronics Corp. | Method of fabricating color filter |
KR101021775B1 (ko) * | 2009-01-29 | 2011-03-15 | 한양대학교 산학협력단 | 에피택셜 성장 방법 및 이를 이용한 에피택셜층 적층 구조 |
TWI563539B (en) * | 2012-01-18 | 2016-12-21 | Sino American Silicon Prod Inc | Composite substrate, manufacturing method thereof and light emitting device having the same |
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2014
- 2014-12-02 CN CN201410724871.8A patent/CN105720136B/zh active Active
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- 2015-12-02 US US15/028,228 patent/US9698302B2/en active Active
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN2713508Y (zh) * | 2004-07-27 | 2005-07-27 | 比亚迪股份有限公司 | 一种单色和区域多色液晶显示板 |
WO2009066791A1 (en) * | 2007-11-22 | 2009-05-28 | Canon Kabushiki Kaisha | Multicolor display apparatus |
CN101840929A (zh) * | 2010-03-15 | 2010-09-22 | 信利半导体有限公司 | 一种区域多色有机电致发光显示器及其制造方法 |
CN102681281A (zh) * | 2011-03-17 | 2012-09-19 | 凸版印刷株式会社 | 多色显示板 |
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Publication number | Publication date |
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US9698302B2 (en) | 2017-07-04 |
US20160329459A1 (en) | 2016-11-10 |
CN105720136B (zh) | 2019-04-05 |
CN105720136A (zh) | 2016-06-29 |
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