WO2016083594A1 - Dispositif électroluminescent à luminophore déporté - Google Patents

Dispositif électroluminescent à luminophore déporté Download PDF

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Publication number
WO2016083594A1
WO2016083594A1 PCT/EP2015/077955 EP2015077955W WO2016083594A1 WO 2016083594 A1 WO2016083594 A1 WO 2016083594A1 EP 2015077955 W EP2015077955 W EP 2015077955W WO 2016083594 A1 WO2016083594 A1 WO 2016083594A1
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WO
WIPO (PCT)
Prior art keywords
phosphor
emitting
light
ceramic
applicable
Prior art date
Application number
PCT/EP2015/077955
Other languages
German (de)
English (en)
Inventor
Jürgen Honold
Tom HILGERINK
Original Assignee
Silicon Hill B. V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Silicon Hill B. V. filed Critical Silicon Hill B. V.
Publication of WO2016083594A1 publication Critical patent/WO2016083594A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil

Definitions

  • the present invention relates to the field of light-emitting devices, more specifically light-emitting devices based on the so-called “remote phosphor” system.
  • “Remote phosphor” systems are understood to mean in particular devices in which a phosphor (luminophore , Engl.:Phosphor) from one in a narrow one
  • Wavelength range light-emitting light source is arranged remotely, usually bound in or connected to a polymer, glass or ceramic matrix.
  • a remote phosphor system is fundamentally different from a system in which the phosphor is mounted directly on or at the light source, such as in LED light sources where the phosphor is applied directly to the light emitting dice.
  • the converted light is re-emitted in the direction of the light source or in the emission direction; the light which has passed through the phosphor matrix is also directed through the back-reflection layer through the phosphor matrix in the emission direction. So the light can only escape in the remission direction.
  • a light-emitting device comprising a converting phosphor ceramic (as a phosphor matrix), the phosphor ceramic
  • the light-emitting remote phosphor device is operated at a radiation power radiated from the device of> 10 W per cm 2 of the outward surfaces of the phosphor ceramics.
  • the maximum temperature of the phosphor matrix can be limited to 200 ° C
  • a system of non-organic components can be formed which is relatively insensitive to aggressive substances such as alkalis or acids
  • a system of non-organic components can be formed which is relatively insensitive to high-energy radiation in the UV or blue light spectrum
  • converting phosphor in the context of the present invention designates or comprises in particular a material which emits light with suitable excitation, preferably in the blue, UV-A or UV-B range (ie in particular from 280 to 490 nm).
  • ceramic in the sense of the present invention means and / or comprises in the context of the present invention, in particular a compact crystalline or
  • polycrystalline material with a controlled amount of pores or nonporous.
  • polycrystalline material within the meaning of the present invention means and / or in particular comprises a material having a volume density of greater than 90 percent of the main component, consisting of more than 80 percent of individual
  • Crystal domains each crystal domain has a diameter of 0.1-10 ⁇ and different crystallographic orientation.
  • the individual crystal domains can be connected or diluted with one another via amorphous or vitreous material or via additional crystalline phases.
  • the crystalline material has a density of> 90% to ⁇ 100% of the theoretical density. This has proven advantageous for many applications of the present invention.
  • LED dice means and / or comprises in particular a light-emitting semiconductor component which is the central, light-emitting subsystem of each LED
  • An LED dice usually consists essentially of a so-called carrier layer (eg silicon, Silicon carbide, sapphire or gallium nitride) and deposited by vapor deposition thin
  • Semiconductor layers e.g., GaN, InGan which are the electroluminescent light-emitting layers. Between the light-emitting layers and the carrier material, light-reflecting layers are usually introduced in order to increase the efficiency of the dices with respect to light extraction.
  • the mounting method of the dice on the internal mounting surface of the light module is increasingly being reversed in order to achieve better heat coupling between light emitting layer and mounting surface, which is then referred to a "flip-chip" system architecture of the dice.
  • the coming LED technologies are not excluded in the context of the invention, such as the so-called nano-LEDs, which have stak miniaturized microstructures, and in particular by their 3-dimensionally shaped , Light-emitting semiconductor layers differ from the layered semiconductor layers of today's customary LED-Dice system architecture.
  • thickness in the sense of the present invention means and / or in particular comprises the average thickness.
  • the thickness of the first layer is a predefined thickness of the second layer.
  • diameter in the sense of the present invention means and / or in particular comprises the minimum extent if the phosphor ceramics is not circular but eg square or rectangular when the devices are embedded in a system, as explained later, the term “diameter” then refers to the respective section of FIG.
  • the term "emitting metal ions” includes and / or means, in particular, metal ions which emit light with suitable excitation, preferably in the blue, UV-A or UV-B range, particular preference being given to rare earths, in particular europium and / or cerium ions.
  • the concentration of emitting metal ions in the phosphor ceramics is from> 0.1 mmol / cm 3 to ⁇ 0.5 mmol / cm 3 .
  • the term "radiation power" in the sense of the present invention designates or comprises in particular the radiant power (W) emitted from the light system in the entire room
  • W radiant power
  • a standardized way of measuring the radiant power of a lighting device in the sense of the present invention is described in the CIE 127: 2007 (Measurements of LEDs) of the International Commission on Illumination.CIE 127: 2007 (Measurements of LEDs) proposes to use an integrating sphere for the measurement, which is set to the mode "total flux mode" all
  • Radiation power (W) to be measured which is emitted by the lighting device.
  • W Radiation power
  • a radiometer is an instrument to measure the power of a radiation source ( ⁇ ).
  • a silicon detector allows measurements from the ultraviolet range to the near infrared range (200nm to 1 lOOnm).
  • a germanium detector allows measurements beyond the near-infrared range (800nm to 1800nm).
  • Other detectors are available for even longer wavelengths, such as InGaAs detectors.
  • Standard industrial coatings can be applied inside the integrating sphere to measure the radiance of the illuminator in the ultraviolet, visible and infrared light spectrum.
  • a Teflon (PTFE) for example, PTFE
  • the remote light-emitting phosphor device comprises a reflection chamber and at least one LED Dice, wherein the height of the reflection chamber minus the height of the LED dices is> 3% to ⁇ 50% of the diameter of the phosphor ceramics.
  • the height of the reflection chamber is> 5% to ⁇ 20% of the diameter of the phosphor ceramics, more preferably> 7% to ⁇ 11% of the diameter of the
  • the LED dice comprises
  • semiconductor layers which are excited upon application of electrical voltage to emit electromagnetic radiation (electroluminescence). These semiconductor layers are selected from the group comprising:
  • AlGaN AlGaN (Aluminum Gallium Nitride)
  • AlInGaP aluminum gallium indium phosphide
  • GaAs gallium arsenides
  • GaAsP gallium arsenide phosphides
  • InGaN Indium Gallium Nitride
  • GaN gallium nitrides
  • semiconductor layers from the group are particularly preferred.
  • InGaN Indium Gallium Nitride
  • GaN gallium nitrides
  • the reflection chamber is filled with a transparent medium and / or material which has a higher optical refractive index than air.
  • a transparent medium and / or material which has a higher optical refractive index than air.
  • Preferred materials are selected from the group comprising silicones, glasses and mixtures thereof.
  • the converting phosphor ceramics comprises a phosphor selected from the group comprising:
  • the device still comprises thermal bridges.
  • thermal bridges encompasses and / or means in particular a thermal connection of the system component to be cooled (phosphor matrix) with a system component suitable for heat removal, this thermal connection being realized by a material having particularly good thermal conductivity (thermal conductivity)
  • Thermal conductivity of the phosphor matrix such as carbon nanotubes
  • an at least partially, preferably completely, circumferential contact surface is formed at least in one edge area of the optical converter and another one is outside the edge area
  • the present invention also relates to a system comprising one or more light-emitting devices according to the present invention. These are preferably arranged adjacent to each other in grid or lattice form, so that a simultaneously compact as well as relatively large overall architecture can be achieved The compact system architecture is further facilitated if the adjacent systems share the same thermal bridges on the facing sides, which is a preferred embodiment of the present invention.
  • the present invention also relates to a lighting fixture comprising one or more light emitting devices according to the invention.
  • Fig. 1 is a very schematic cross-sectional view of a light-emitting device
  • Fig. 2 is a fragmentary plan view of the device of FIG. 1 obliquely from above.
  • Fig. 3 shows a system of several devices according to the invention according to an alternative embodiment of the invention
  • FIG. 4 shows an exploded view of a second system comprising a plurality of inventive devices according to a further embodiment of the invention
  • FIG. 5 is a very schematic view of another embodiment of the invention.
  • Fig. 6 shows the view of Fig. 5 in a sectional view obliquely from above
  • Fig. 7 is a very schematic view of another embodiment of the invention. such as
  • FIG. 8 shows a luminaire fitting comprising light-emitting devices according to a
  • Fig. 1 shows a very schematic cross-sectional view of a light-emitting device 1 according to a first embodiment of the invention.
  • the device 1 comprises a converting luminescent ceramic 10, which is placed on an annular thermally conductive layer 25, which in turn is applied to a carrier substrate 20, so that a reflection chamber 40 is formed.
  • an LED Dice 30 is further applied, in addition, two Metallmaschinesebenen 50 are provided, via which the device can be mechanically and thermally connected.
  • the carrier substrate 20 is furthermore located on a heat dissipator 60. As can be seen in FIG.
  • the luminescent ceramic material 10 is plate-shaped, so that the diameter D of the luminescent ceramic 10 is significantly greater than 5: 1 in relation to the thickness d Height h of the reflection chamber 40 is displayed; the conditions in Fig. 1 are very schematic, in most applications, the height h is the
  • Fig. 2 shows the device of Fig. 1 in a fragmentary plan view obliquely from above.
  • the phosphor ceramics 10 is approximately discus-shaped and rests on the annular thermally conductive layer 25.
  • Fig. 3 shows a system of several fiction, contemporary devices according to an alternative embodiment of the invention.
  • the phosphor ceramics 10 this time of square shape, form a 3 ⁇ 3 gate.
  • the thermally conductive layer 25 in the embodiment shown here is attached in a form-fitting manner laterally to the phosphor ceramic 10 or merges into it, in which case the thermally conductive layer 25 can be made of the same material as that of the phosphor ceramic.
  • thermally conductive layer 25 is positively attached or merges into a bottom flange 25b which can be thermally and mechanically connected to a carrier substrate or the heat dissipator 60, not shown here, for example via a bottom metallization level not shown here.
  • FIG. 4 shows an exploded view of a second, much more complex system comprising a plurality of inventive devices according to a further embodiment of the invention.
  • the system is constructed in layers on a copper-containing heat dissipator 60.
  • a first metallization layer 51 is applied, followed by an electrically insulating but thermally conductive ceramic layer 80.
  • a reflective and electrically conductive metallization layer 52 is provided, on which in turn a frame and webs of copper are attached, which are the thermally and electrically conductive layers 25A and the thermal vias 25B.
  • a reflective (paint) layer 70 is applied.
  • a grid of LEDs 30 which are deposited on the metallization layer 52 not covered by the layers 25A and 25B.
  • Layer 25A and 25B may consist of separate or coherent bodies, so these are
  • thermovias or also: heat sinks
  • phosphor ceramic 10 The width of a single reflection chamber is defined by the indication of the diameter in FIG. 4, which depends on the distance of the thermo sets 25B derives
  • FIG. 5 shows a very schematic view of another embodiment of the invention. In Fig. 5 is good to see that similar to the embodiment of FIG. 3 also here
  • Phosphor ceramic 10 merges positively or is attached to the thermally conductive layer 25, which in turn is mounted form-fitting or merges into one
  • Bottom flange 25b which, for example, via a bottom-side metallization not shown here thermally and mechanically with a not shown here
  • Carrier substrate or the cherriesabieiter 60 can be connected.
  • this embodiment has a separate bottom flange mounted inside the luminescent ceramic material 10, which in turn is connected to the luminescent ceramic via the thermally conductive layer as described above and thermally and / or mechanically to a carrier substrate or heat dissipator 60 on the bottom side can be connected, wherein bottom flange and thermally conductive layer can be made of the same material as that of the phosphor ceramic.
  • Luminescent ceramic is defined by the indication of the diameter in Fig. 5.
  • Fig. 6 shows the embodiment of Fig. 5 in a sectional view approximately obliquely from above. In this view, the size of the phosphor ceramic 10 is particularly good to see.
  • Fig. 7 shows a very schematic view of a further embodiment of the invention, in which, unlike in Fig. 5 and 6, the thermal bridges 90 are constructed columnar.
  • the phosphor ceramic covers as in Figure 4 several reflection chambers, these reflection chambers are not delimited by bar-shaped Thermostege in contrast to Fig. 4, but abstractly formed by the adjacent free-standing thermal vias 90th
  • the size of a single abstract reflection chamber is defined by the indication of the diameter in FIG. 6, which can be formed by the distance of the chamber-forming thermovias 90 from one another and the distance of the chamber-forming thermovias 90 and the nearest inner wall of the thermally conductive layer 25 ,
  • thermovias 90 are deliberately partially distributed irregularly under the surface of the phosphor ceramic in FIG. 6, since it has been found in practice that the spacings of the thermovias must be reduced from case to case by the distribution of these thermovias 90 with the distribution of the LED dices
  • the LED dices must be electronically connected in two parallel series circuits with the same number of LED dices. D is thus to be understood here as the maximum chamber size, which limits the thermally induced Lichtkonverttechnikseffizienzabfall (English: thermal quenching) in the phosphor plate, whereby single chamber large and thus the distances of the thermovias due to circuitry reasons, can also be reduced.
  • FIG. 8 shows a luminaire fitting 100 comprising light-emitting devices 1, 1 'according to an embodiment of the invention.
  • the lighting fixture 100 additionally includes a housing 110, a cooling apparatus or heat sink 120, an LED driver electronics 130, and optical system components, in this case a light reflector 140.
  • optical System components such as light-reflecting, refractive or light diffractive optical components may be present.
  • Such light fittings are used, inter alia, in the so-called "high bay” lighting, which requires particularly high luminous fluxes, inter alia for illuminating sports stadiums or other applications in the outdoor or indoor area.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)

Abstract

La présente invention concerne un dispositif électroluminescent à luminophore déporté comprenant une céramique à luminophore. La céramique à luminophore se présente en couches et présente un diamètre important par rapport à l'épaisseur.
PCT/EP2015/077955 2014-11-27 2015-11-27 Dispositif électroluminescent à luminophore déporté WO2016083594A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014117440.2 2014-11-27
DE102014117440.2A DE102014117440B3 (de) 2014-11-27 2014-11-27 Lichtemittierende Remote-Phosphor-Vorrichtung

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WO2016083594A1 true WO2016083594A1 (fr) 2016-06-02

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Cited By (1)

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CN108025982A (zh) * 2016-06-16 2018-05-11 日本碍子株式会社 陶瓷基体及其制造方法

Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
DE102017120091A1 (de) 2017-08-31 2019-02-28 NARVA Lichtquellen GmbH + Co. KG Industriegebiet Nord Remote-Phosphor-Leuchtvorrichtung mit Lichtemission im UV-Bereich
JP2022040893A (ja) * 2020-08-31 2022-03-11 日亜化学工業株式会社 アルカリ土類アルミン酸塩蛍光体、発光装置及びアルカリ土類アルミン酸塩蛍光体の製造方法

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EP2070891A1 (fr) * 2006-09-25 2009-06-17 Ube Industries, Ltd. Composite céramique pour phototransformation et dispositif d'émission de lumière utilisant celui-ci
US20100301739A1 (en) * 2009-06-01 2010-12-02 Nitto Denko Corporation Luminescent ceramic and light-emitting device using the same
US20120113617A1 (en) * 2010-11-10 2012-05-10 Osram Sylvania Inc. Luminescent Ceramic Converter and LED Containing Same
JP2013171844A (ja) * 2012-02-17 2013-09-02 Stanley Electric Co Ltd 光源装置および照明装置
JP5620562B1 (ja) * 2013-10-23 2014-11-05 株式会社光波 単結晶蛍光体及び発光装置

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DE102006054330A1 (de) * 2006-11-17 2008-05-21 Merck Patent Gmbh Leuchtstoffplättchen für LEDs aus strukturierten Folien
US8410500B2 (en) * 2006-12-21 2013-04-02 Koninklijke Philips Electronics N.V. Light-emitting apparatus with shaped wavelength converter
CN103403894B (zh) * 2011-03-07 2016-10-26 皇家飞利浦有限公司 发光模块、灯、照明器和显示装置
JP2014140015A (ja) * 2012-12-19 2014-07-31 Panasonic Corp 発光モジュールおよびこれを用いた照明用光源

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Publication number Priority date Publication date Assignee Title
EP2070891A1 (fr) * 2006-09-25 2009-06-17 Ube Industries, Ltd. Composite céramique pour phototransformation et dispositif d'émission de lumière utilisant celui-ci
US20100301739A1 (en) * 2009-06-01 2010-12-02 Nitto Denko Corporation Luminescent ceramic and light-emitting device using the same
US20120113617A1 (en) * 2010-11-10 2012-05-10 Osram Sylvania Inc. Luminescent Ceramic Converter and LED Containing Same
JP2013171844A (ja) * 2012-02-17 2013-09-02 Stanley Electric Co Ltd 光源装置および照明装置
JP5620562B1 (ja) * 2013-10-23 2014-11-05 株式会社光波 単結晶蛍光体及び発光装置
US20160043289A1 (en) * 2013-10-23 2016-02-11 National Institute For Materials Science Single crystal phosphor, phosphor-containing member and light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108025982A (zh) * 2016-06-16 2018-05-11 日本碍子株式会社 陶瓷基体及其制造方法
CN108025982B (zh) * 2016-06-16 2020-11-17 日本碍子株式会社 陶瓷基体及其制造方法

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