WO2016076671A1 - Procédé et appareil pour essayer un élément flexible - Google Patents

Procédé et appareil pour essayer un élément flexible Download PDF

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Publication number
WO2016076671A1
WO2016076671A1 PCT/KR2015/012248 KR2015012248W WO2016076671A1 WO 2016076671 A1 WO2016076671 A1 WO 2016076671A1 KR 2015012248 W KR2015012248 W KR 2015012248W WO 2016076671 A1 WO2016076671 A1 WO 2016076671A1
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WIPO (PCT)
Prior art keywords
flexible
chamber
flexible element
flexible device
test
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PCT/KR2015/012248
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English (en)
Korean (ko)
Inventor
김덕기
류호준
현승민
장봉균
Original Assignee
세종대학교산학협력단
한국기계연구원
한국전자통신연구원
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Priority claimed from KR1020150060813A external-priority patent/KR101675387B1/ko
Application filed by 세종대학교산학협력단, 한국기계연구원, 한국전자통신연구원 filed Critical 세종대학교산학협력단
Publication of WO2016076671A1 publication Critical patent/WO2016076671A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/04—Housings; Supporting members; Arrangements of terminals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/30—Marginal testing, e.g. by varying supply voltage

Definitions

  • the present invention relates to a test method and apparatus for evaluating the electrical and mechanical properties of a flexible device in a bulge, bulge or shrinkage state.
  • the flexible device Unlike the device formed on the rigid substrate, the flexible device maintains the characteristics of the device even when repeated stress is applied and has the property of easily bending. Therefore, the flexible element may be used in a flexible electronic component such as a flexible display, a touch screen, or a sensor attachable on a free curved surface.
  • a flexible electronic component such as a flexible display, a touch screen, or a sensor attachable on a free curved surface.
  • the flexible device is generally manufactured in a film form by mixing a ceramic / metal material with a flexible polymer material, and then made through a subsequent process such as electrode deposition.
  • a device may be implemented using a semiconductor process on a substrate or a wafer for a semiconductor, and the device may be implemented through an etching process and a transfer process.
  • Korean Patent Laid-Open No. 10-2009-0083087 name of the invention: a thin film transistor, a method for manufacturing the same, and a flexible display device including the thin film transistor
  • a thin film transistor including a flexible substrate which simplifies the manufacturing process. It is starting.
  • a thin film transistor includes a gate electrode formed on a substrate, a semiconductor layer insulated from the gate electrode by a gate insulating layer, and including a channel region, a source region and a drain region, and a source electrode and a drain electrode in contact with the source region and the drain region.
  • 1 is a result of measuring the mechanical and electrical properties of a thin film transistor including a conventional flexible substrate. Specifically, the mechanical and electrical properties of the permanently deformed substrate are induced by inducing deformation on the flexible substrate.
  • FIG. 1 shows a thin film transistor formed of carbon nanotubes on a flexible substrate
  • (d) shows an optical transmission of the flexible substrate and an optical state of a carbon nanotube thin film transistor formed on a flexible substrate.
  • the transmittance is shown.
  • (b) shows I D -V GS transfer characteristics of the top-gate of the thin film transistor.
  • the I D -V GS transfer characteristic means a relationship between the drain current I D and the voltage V GS between the gate and the source.
  • (e) denotes an I D -V DS output characteristics on the thin film transistor, wherein the I D -V DS is a drain current (I D) and the drain-refers to the relationship between the source voltage (V DS).
  • (c) shows the strain according to the degree of bending of the substrate
  • (f) shows the on / off current according to the strain of the substrate.
  • the strain of the substrate may be derived through the bent angle d ⁇ of the substrate, the radius of curvature D, and the thickness d of the substrate.
  • the prior art induced deformation on the flexible substrate, thereby measuring the mechanical and electrical properties of the permanently deformed substrate.
  • various kinds of plastic deformation substrates have to be manufactured, and in the case of elastic deformation substrates, measurement is impossible. There was a problem.
  • Some embodiments of the present invention aim to propose a test method and apparatus for deforming a flexible device stepwise in an expanded, expanded or contracted state, thereby evaluating the electrical and mechanical properties of the flexible device.
  • the test method of the flexible device according to the first aspect of the present invention is a step of fixing the flexible device to be measured to the main body, along the circumference of the support surface included in the main body Electrically contacting a flexible device with an electrical connection including at least one electrode pad disposed thereon, adjusting a pressure of the chamber by inputting or outputting a medium into the chamber included in the body part, and induced by the pressure of the chamber. Testing the flexible element deformed by stress.
  • the flexible device test apparatus includes a main body portion including a chamber and a support surface on which the flexible element is to be mounted, a main body portion, and an input unit through which a medium for adjusting pressure of the chamber is input, and formed in the main body portion. And an output part for outputting the medium, a clamping part for fixing the flexible element to the support surface, and a clamping part, which is formed along a circumference of the support surface and a window part for exposing a portion of the flexible element.
  • An electrical connection including at least one electrode pad for electrical contact, and a control unit for adjusting the pressure of the chamber through the control of the input and output. At this time, the stress is provided to the flexible device according to the pressure of the chamber.
  • the mechanical and electrical characteristics of the flexible device can be grasped.
  • the deformation of the flexible element due to expansion, expansion or contraction can be measured step by step.
  • 1 is a result of measuring the mechanical and electrical properties of a thin film transistor including a conventional flexible substrate.
  • FIG. 2 is a view showing a test apparatus of a flexible device according to an embodiment of the present invention.
  • FIG. 3 is a view showing a test apparatus of a flexible device according to another embodiment of the present invention.
  • FIG. 4 is a flowchart illustrating a test method of a flexible device according to an exemplary embodiment of the present invention.
  • the flexible device described throughout the present specification may include an active device that may be used in a passive device and a thin film transistor formed by forming a thin film by a method such as deposition or sputtering on a substrate having good insulation.
  • the thin film transistor is insulated from the gate electrode by a gate electrode and a gate insulating film formed on the flexible device serving as a substrate and includes a channel region, a source region and a drain region. And a source electrode and a drain electrode in contact with the semiconductor layer and the source region and the drain region.
  • the flexible device used at this time is a polymer film, polyester (polyester), polyvinyl (polyvinyl), polycarbonate (polycarbonate), polyethylene (polyethylene), polyacetate (polyacetate), polyimide, polyether sulfone (polyethersulphone; PES), polyacrylate (polyacrylate; PAR), polyethylene naphthelate (PEN), polyethyleneterephehalate (PET), elastomer (elastomer), PDMS (polydimethylsiloxane), etc. It may be made of.
  • the gate electrode may be formed of a conductive metal, carbon nanotube (CNT), graphene, and the like, and the semiconductor layer may be formed of an inorganic semiconductor, an organic semiconductor, or an oxide semiconductor.
  • the source electrode and the drain electrode may be formed of a metal, a carbon nano tube (CNT), graphene, or the like.
  • the gate insulating film is formed by applying an inorganic material such as HfOx, TiOx, SiOx, SiNx, AlOx, or other organic materials such as PVA, PVP, PMMA, which can be processed at low temperature (for example, 200 ° C. or lower) by a conventional coating method can do.
  • an inorganic material such as HfOx, TiOx, SiOx, SiNx, AlOx, or other organic materials such as PVA, PVP, PMMA, which can be processed at low temperature (for example, 200 ° C. or lower) by a conventional coating method can do.
  • the semiconductor layer should be formed at a temperature lower than the melting temperature of the flexible element. Therefore, chemical vapor deposition (CVD) or physical vapor deposition (PVD) methods which can be processed at a temperature of 200 ° C. or less can be used.
  • the semiconductor layer may be formed of an inorganic semiconductor such as silicon (Si), an organic semiconductor such as polyacetylene, polythiophene, polypyrrole, polyaniline, or zinc oxide (ZnO) or copper oxide. It can be formed from an oxide semiconductor containing (CuOx) or the like as a main component.
  • the source electrode and the drain electrode may be formed of a metal.
  • the source electrode and the drain electrode may be formed by mixing metals such as gold (Au), silver (Ag), platinum (Pt), and the like in an organic solvent, and then printing and curing the ink.
  • the source electrode and the drain electrode may be manufactured by printing a metal by an inkjet method. Since the inkjet method does not need to use a mask, a mask saving effect can be obtained.
  • the flexible element can be used in the thin film transistor, and can flexibly cope when the substrate is to be moved or the substrate is bent to insert the component element.
  • a thin film for various functions may be formed on one surface of the substrate formed of the flexible element.
  • a semiconductor chip but also a plurality of devices such as a capacitor, a solar cell, a thermoelectric element, and a battery may be mounted as the electronic element. Therefore, in order to develop and apply a flexible device, an apparatus and method for evaluating the characteristics of the flexible device are needed.
  • the term “deformation” refers to a state in which the swelling is bulky due to swelling
  • “expansion” refers to a state of bulging and protrudes
  • “shrinkage” refers to expansion and It refers to a state of returning to the original state from the expanded state, or the state of shrinking in volume or scale within the elastic limit of the flexible element.
  • FIG. 2 is a view showing a test apparatus of a flexible device according to an embodiment of the present invention.
  • the test apparatus 10 of the flexible device may include a main body 100, an input unit 200, an output unit 300, a clamping unit 400, a window unit 500, and an electrical connection unit. 600, the control unit 700, and the O-ring member 800.
  • the test device 10 of the flexible device may include an electrical property measuring device 900 for measuring electrical properties of the flexible device, a mechanical property measuring device (not shown) for measuring mechanical properties, and a heating device ( 1000) may be further included.
  • the mechanical property measuring device may be any device that can measure the height of the flexible device when it is expanded, expanded or contracted to rise or contract.
  • the main body 100 may include a chamber 110 and a support surface 120 on which the flexible device is mounted.
  • the chamber 110 may be located on the lower surface of the main body 100, and the support surface 120 may be located along the circumference of the upper end surface of the chamber 110.
  • the chamber 110 may accommodate the medium, and may receive the pressure in the chamber 110.
  • the medium may include oil, gas, distilled water, and the like, but is not limited thereto.
  • the input unit 200 and the output unit 300 formed in the main body unit 100 may input or output a medium.
  • the input unit 200 and the output unit 300 may be located anywhere in the main body unit 100, but an easy place for inputting and outputting a medium is preferable.
  • the support surface 120 of the body portion 100 may mount the flexible element.
  • a clamping part 400 may be formed to fix the flexible element to the support surface 120.
  • the clamping part 400 may be provided with a window part 500 to expose a portion of the flexible element.
  • an area of a hole drilled in the clamping part 400 is the window part 500. Therefore, when the flexible element is fixed on the support surface 120 by the clamping part 400, one side of the flexible element is exposed toward the chamber 110 through the window portion 500, thereby to the chamber 110. Can be in contact with the stored media.
  • the pressure in the chamber 110 may be adjusted by the input or output of the medium, and thus, the flexible element may be inflated, expanded or contracted and bent toward the inside or outside of the chamber 110.
  • the window 500 may be in the form of any one of a circle, a rectangle, a square, and an oval.
  • FIG. 2 (d) shows a circular window portion 500.
  • the stress state applied to the area of the flexible element may vary.
  • the stress state applied to the flexible element is a biaxial stress state.
  • the stress state applied to the flexible element may be a uniaxial stress state.
  • the O-ring member 800 is disposed along the circumference of the upper end surface of the chamber 110.
  • the O-ring member 800 when the flexible element is mounted on the support surface 120 located on the upper end surface of the chamber 110 (FIG. 2C), the flexible element, the clamping part 400, and the chamber 110. It is possible to strengthen the contact between the upper end of the). Therefore, the O-ring member 800 is preferably located between the upper end surface of the chamber 110 and the flexible element.
  • the electrical connection 600 including one or more electrode pads 610 disposed along the circumference of the support surface 120 And (e) of FIG. 2.
  • the electrical connection unit 600 may measure an electrical signal that changes as the flexible device gradually changes due to expansion, expansion, or contraction in real time.
  • the electrical connection unit 600 is connected to the electrical characteristic measuring device 900 and may be connected to the flexible device through wire bonding.
  • the electrical characteristic measuring apparatus 900 may output a voltage or current signal for detecting electrical characteristics with respect to the connected flexible element, and calculate an electrical characteristic based on the voltage or current signal detected from the electrode of the flexible element.
  • the electrical characteristic measuring apparatus 900 may measure I D -V GS transfer characteristics representing a relationship between the drain current I D of the top-gate and the voltage V GS between the gate and the source of the flexible device. And I D -V DS output characteristics indicating the relationship between the drain current I D and the voltage V DS between the drain and the source can be measured. In addition, the on / off current of the thin film transistor can be measured. Mobility, threshold voltage, slope of sub-threshold voltage, etc. can be calculated based on the measured electrical characteristics.
  • the controller 700 may control the entry and exit of the input unit 200 and the output unit 300. For this reason, the pressure in the chamber 110 can be adjusted.
  • the controller 700 may include a pressure sensor and a pressure controller, the accuracy of which is preferably within the error range of 1%.
  • the controller 700 closes the output unit 300 and controls the input unit 200 to input the medium
  • the pressure in the chamber 110 is higher than the pressure of the external environment, thereby causing the chamber 110 and
  • the connected flexible element is pressured in a direction outside the chamber 110 inside the chamber 110.
  • Figure 3 is a view showing a test device of the flexible device according to another embodiment of the present invention.
  • the flexible element is bent in the direction of the interior of the chamber 110.
  • the control unit 700 adjusts the output unit 300 to close the input unit 200 and output the medium. That is, the pressure in the chamber 110 is lower than the pressure of the external environment, so that the flexible element connected to the chamber 110 may be bent in the direction of the inside of the chamber 110 from the outside of the chamber 110.
  • the controller 700 controls the pressure in the chamber 110
  • the flexible element fixed to the support surface 120 of the chamber 110 may be deformed.
  • the degree of deformation may be measured through a mechanical characteristic measuring instrument, and the change in electrical characteristics due to deformation may be measured by the electrical characteristic measuring apparatus 900.
  • deformation may be induced in a state in which heat is applied using a heating device 1000 such as a halogen lamp or a heater from the outside.
  • a heating device 1000 such as a halogen lamp or a heater from the outside.
  • Mechanical properties of flexible devices that can be measured by measuring instruments include height and displacement due to expansion, expansion or contraction, residual stress, Young's modulus, yield strength and tensile strength. (tensile strength), the ratio of transverse and longitudinal strain (poisson ratio), the coefficient of thermal expansion (CTE), the creep properties, and the stress-life curves.
  • the mechanical properties are measured by the nano-indentation test, the expansion or bulge test (bulge test), the bending test (bending test), the micro-tension test method.
  • the nano indentation test is a method of performing the indentation test with a tester at a constant frequency and amplitude and evaluating the mechanical properties of the thin film using the dynamic response characteristics of the test piece. That is, the load and displacement generated while indenting the indenter into the material can be continuously measured, and the area of the indentation can be inferred from the measured displacement and load, thereby measuring residual stress, viscoelastic properties, and flow curves. have.
  • the flexible element is deformed by a gas or a liquid, and by measuring the deformation, the relationship between the stress and the deformation of the thin film can be calculated.
  • the strain is measured by an interferometry or capacitive gauge.
  • the elasticity and plastic behavior of the material can be determined by measuring the height of the thin film of the flexible element deformed by the expansion or expansion test method. In particular, by measuring the difference in the refractive index of the comparison group and the control group by using an interferometer method using a laser can determine the degree of deformation of the comparison group.
  • the bending test method measures the mechanical properties of a flexible device by applying a bending state by moving a movable jig relative to a fixed jig using a motor or the like.
  • the tensile test method can measure the degree of extension of the flexible element by applying a load after fixing the flexible element. For example, both ends of the test piece are fixed to the tester, and a tensile force (pulling force) is applied in both directions of the test piece axis, and then the difference between the refractive indexes of the comparison group and the control group is measured by an interferometer method.
  • the degree of deformation can be known.
  • the electrical characteristic measuring device 900 outputs a voltage or current signal for detecting electrical characteristics to the flexible element connected through wire bonding, and based on the voltage or current signal detected from the electrode of the flexible element Can be calculated.
  • the accuracy is at least within an error range of ⁇ 0.1%.
  • the small current passed can often be the gate leakage current, when the gate leakage current is 1 pA, the resolution of the equipment should be 1 fA or smaller.
  • the change in temperature is preferably less than 2 degrees.
  • the heating device 1000 used to maintain the temperature condition or used to heat the flexible element itself may be implemented as a heater or a halogen lamp.
  • the heating device 1000 is in the form of a heater. When implemented, as shown in (a) of FIG. 2, it may be located at the bottom of the chamber 110 to transfer heat energy to the chamber 110. Accordingly, the medium in the chamber 110 is actively moved, it is possible to transfer the heat energy to the flexible element.
  • the heating device 1000 when the heating device 1000 is implemented in the form of a halogen lamp, as shown in Figure 2 (b), it may be positioned at a predetermined interval on the upper end of the flexible element. In this manner, the heating device 1000 may be any device that can apply thermal energy to a flexible element such as a heater or a halogen lamp.
  • FIG. 4 is a flowchart illustrating a test method of a flexible device according to an exemplary embodiment of the present invention.
  • the size of the flexible device to be tested is preferably larger than the window 500.
  • the window portion 500 it is difficult to support the clapping portion 400, and when the size of the window portion 500 and the flexible element are similar, the expansion, expansion or contraction may be applied.
  • the flexible element When the flexible element is deformed, the flexible element may be bent and smaller than the window part 500.
  • the window part 500 since the window part 500 is not sealed with the flexible element, the inside of the chamber 110 may be exposed to air, and thus it may be difficult to maintain the pressure of the chamber 110.
  • the manufactured flexible device should be stored well to prevent oxidation.
  • the measurement may not be performed properly due to the change of electrochemical properties due to the storage environment.
  • the fixing of the flexible device to be measured to the main body unit 100 (S410) and the support included in the main body unit 100 is performed. Electrically contacting the flexible device and the electrical connection part 600 including one or more electrode pads 610 disposed along the circumference of the surface 120 (S420), and the chamber 110 included in the main body part 100. Controlling the pressure of the chamber 110 by inputting or outputting the medium to the medium (S430), and testing the flexible element deformed by the biaxial stress induced by the pressure of the chamber 110 (S440). .
  • testing of the flexible device at this time can measure the mechanical and electrical properties.
  • the flexible device to be measured is fixed to the main body unit 100 (S410).
  • the flexible element may be fixed along the circumference of the support surface 120 while covering the window portion 500. At this time, it can be mechanically fixed using the clamping unit (400). In addition, it can be completely sealed through epoxy gluing. At this time, it is desirable to prevent unwanted wrinkles, bends, sheer stress and the like.
  • the O-ring member 800 may be disposed between the flexible element, the clamping part 400, and the upper end surface of the chamber 110 to strengthen the contact state.
  • the flexible element and the electrical connection 600 may be wire-bonded to make electrical contact.
  • the medium is input or output to the chamber 110 included in the body portion 100 to adjust the pressure of the chamber 110 (S430). .
  • the pressure is preferably increased or decreased sequentially.
  • the pressure range is preferably 10 ⁇ 9 / s to 10 ⁇ 4 / s.
  • I D -V GS transfer characteristics representing the relationship between the drain current I D of the top-gate and the voltage V GS between the gate and the source can be measured, and the drain current I D and the drain-source can be measured.
  • I D -V DS output characteristics indicating the relationship between the voltage (V DS ) can be measured.
  • V th (ci), V th (ext), I d (sat), I d (lin), I d (leak), G m (max), ⁇ ( parameters such as lin), ⁇ (sat), and SS can be extracted. Next, each parameter will be described in more detail.
  • V th (ci) means a constant current threshold voltage, and can be defined by the following equation.
  • V ds 0.05 ⁇ 0.1V
  • V th (ci) the gate voltage when I d has a value of 0.1 ⁇ A X gate width.
  • V th (ext) means extrapolated threshold voltage, and can be defined by the following equation.
  • V ds 0.05 ⁇ 0.1V.
  • V th (ext) is a gate voltage when the slope of I d -V gs becomes maximum.
  • V gs (gm (max)) is a gate voltage when gm This is the maximum, I d (gm (max) ) refers to a drain current when the V gs value is the V gs (gm (max)) .
  • gm (max) is a value when DC conductivity is maximum.
  • I d (sat) means saturated drain current and is the drain current when the values of V ds and V gs are typical supply voltage values under driving conditions.
  • I d (lin) stands for linear drain current, where V ds is a value between 0.05V and 0.1V and V gs is the drain current when it has a typical supply voltage under operating conditions. it means.
  • I d (leak) means drain leakage current
  • V ds is a typical supply voltage under driving conditions
  • V gs is zero.
  • Gm (max) means maximum trans-conductance.
  • Gm is the slope of I d -V gs
  • Gm (max) is the interconductance value measured when V gs is equal to V th (ext).
  • V ds the interconductance value measured when V gs is equal to V th (ext).
  • ⁇ (lin) means linear mobility, which can be calculated from the slope of I d -V gs , and follows the following equation.
  • V ds 0.05 to 0.1V
  • C g the capacitance of a given gate oxide
  • W the gate width
  • L the gate length
  • ⁇ (sat) means saturated mobility, and can be calculated using the following equation in I d -V gs .
  • the saturation range is (V ds ⁇ V gs -V th ), C g means capacitance of a given gate oxide film, W means gate width, and L means gate length.
  • SS denotes a sub-threshold slope, and thus, it is possible to measure how efficiently the conductive channel is formed in the device and calculate it by using the following equation.
  • V SS is the slope of the V gs -log10 (I d ) curve, and Log10 (I d ) and V gs graphs show the approximate log linear behavior in the driving region of the thin film transistor with V ds fixed.
  • mechanical properties such as expansion, expansion or contraction degree, displacement, etc. of the flexible element can be obtained from the mechanical property measuring device.
  • the mechanical property measuring instrument By measuring the deformed height from the mechanical property measuring instrument, mechanical properties such as stress-strain (strain) of the flexible device can be extracted.
  • measuring equipment using a laser interferometry such as Michelson interferometry can measure the height of the expanded or expanded state.
  • the source beam can be separated into two separate beams through an optical arrangement.
  • One beam is reflected from the expanded surface and returned to the measuring device. This can be recombined with the other beam reflected from the reference mirror.
  • the difference in path lengths of the two beams may generate a band-shaped pattern, and the band-shaped pattern may be composed of a black band and a light band. Therefore, the expansion, or the degree of expansion of the flexible element can be confirmed by measuring the number of bands formed by the beam that is refracted.
  • Photo detectors and spot infrared laser light sources can measure the maximum refraction of an expanded or expanded flexible device.
  • the degree of inflation to the maximum height or the maximum degree of refraction can be measured at the center of the flexible element.
  • the laser would have to be positioned so that the center of the flexible element is illuminated vertically.
  • the change in capacitance can also be measured, it is possible to measure the stress applied to the flexible element by the thickness of the flexible element, the change in capacitance, the pressure. At this time, the change in height and capacitance can be obtained from conventional mathematical calculations.
  • Figure 5 is an expected result of the electrical characteristics of the device using the flexible device test apparatus according to an embodiment of the present invention.
  • electrical characteristics such as V th , SS, and mobility may be extracted from I D and V GS curves of a thin film transistor using a flexible device through an embodiment of the present disclosure.
  • V D is equal to V ds .
  • ⁇ n is also the same as ⁇ and ⁇ _bar.
  • the SS value of a single crystal Si transistor is usually 70 mV / decade, and a small SS value means that the transistor turns on quickly from off to on.
  • FIG. 6 is an expected result of the mechanical properties of the device using the flexible device test apparatus according to an embodiment of the present invention.
  • Figure 6 is a result showing the relationship between the pressure for the Ag-Pd / SiNx and the height of expansion or expansion.
  • Mechanical properties such as residual stress and modulus can be extracted from the slopes and intercepts of the p / h and h2 graphs.
  • the test method and apparatus of the flexible device can measure the electrical and mechanical properties of the device manufactured on the flexible substrate.
  • the deformation of the flexible element due to expansion, expansion or contraction can be measured step by step.

Abstract

Selon la présente invention, l'invention concerne un procédé et un appareil permettant d'essayer un élément flexible, le procédé comprenant les étapes suivantes : la fixation, à une unité de corps principal, d'un élément flexible à mesurer ; le fait d'amener une unité de connexion électrique, qui comprend une ou plusieurs plaquettes d'électrodes agencées le long de la circonférence d'une surface de support incluse dans l'unité de corps principal, et l'élément flexible à venir électriquement en contact l'un avec l'autre ; le réglage de la pression d'une chambre en mettant un milieu dans la chambre incluse dans l'unité de corps principal ou en retirant le milieu de celle-ci ; l'essai de l'élément flexible déformé par la contrainte induite par la pression de la chambre.
PCT/KR2015/012248 2014-11-13 2015-11-13 Procédé et appareil pour essayer un élément flexible WO2016076671A1 (fr)

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