WO2016076630A1

WO2016076630A1 - Method for forming electrode patterns and electrode patterns

Info

Publication number: WO2016076630A1
Application number: PCT/KR2015/012124
Authority: WO
Inventors: 김호종; 정택성; 한진기; 이승혁
Original assignee: 주식회사 동진쎄미켐
Priority date: 2014-11-12
Filing date: 2015-11-11
Publication date: 2016-05-19
Also published as: JP2017539053A; CN107003787A; KR20160056830A

Abstract

The present invention relates to a method for forming electrode patterns. The method for forming the electrode patterns of the present invention is applicable to various devices which require microelectrode patterning and, particularly, is useful to be applicable to forming a touch sensor provided in a touch screen panel (TSP).

Description

【Specification】

[Name of invention]

Formation method of electrode pattern and electrode pattern

Technical Field

The present invention relates to a method of forming an electrode pattern and an electrode pattern. More specifically, the present invention relates to a method of forming an electrode pattern and an electrode pattern, which can be applied to forming a touch sensor included in a touch screen panel (TSP), and can form a fine line width. Background Art

The touch screen panel presses a screen displayed on the panel to input information displayed on the screen. Recently, touch screen panels have been actively applied to all display devices due to ease of use.

In general, the touch screen panel extracts the coordinates of the pressed portion and inputs information using a capacitive method, a resistive film method, a surface ultrasonic method, and an infrared method. Here, in the capacitive method, when the user touches the screen, the capacitive method detects a position by using a capacitance of the human body to recognize a current change amount.

The touch screen panel is driven by forming a plurality of electrode sensors in the center of the substrate, which is basically made of glass or film. Recently, as the sensor area is expanded and complicated, it is required to form electrode patterns in increasingly fine patterns. have.

Conventionally, a method of forming an electrode pattern typically includes a printing method, an imprinting method, and a photo method including a screen printing method and a gravure off-set printing method. Photolithography and the like.

In the above printing method, the screen printing method is a method of forming an electrode pattern by printing a conductive conductive paste composition to a predetermined thickness on a surface of a substrate using a screen having an electrode pattern shape to be formed, and then curing it. . The screen printing method is simpler in manufacturing equipment and processes than in photolithography, thereby reducing equipment and material costs. Although there is an advantage in that it is difficult to implement a fine pattern of the electrode wiring of less than 80 microns.

In the gravure offset printing method, a printed conductive paste composition is printed on a surface of a substrate using a gravure roll having a negative electrode pattern in the shape of an electrode pattern and a silicon blanket of a flat plate, and then cured to form an electrode pattern. That's the way. The gravure offset printing method has advantages in that the manufacturing equipment and process are simpler than the photolithography method, thereby reducing equipment and material costs, but it is difficult to realize a fine pattern of 20 or less electrode wirings.

In the photolithography method, first, a conductive film is formed on a substrate by a sputtering process, a photoresist is applied on the conductive film, and then a portion of the conductive film is exposed by selectively exposing the photoresist using a mask. The exposed conductive film is removed by etching to form an electrode pattern, and the remaining? Toresist is removed to finally complete the electrode pattern. Such photolithography method can realize fine line width, but it must go through complicated process because photoresist coating, exposure, development, etching and peeling process must be performed after conductive film deposition under vacuum, and expensive equipment is required for investment cost and production cost. Has the disadvantage of increasing.

Korean Laid-open Patent Publication No. 2013-0109586 forms a trench in a substrate, and forms a conductive pattern including providing the conductive ink in the trench in a state in which an electric field is formed between the nozzle and the substrate for spraying the conductive ink. A method is disclosed. However, since the method uses an electric field, there is a limit to using a conductive material having electrical characteristics as a trench, and the process is complicated, and due to process characteristics, it is difficult to form one or more thicknesses.

[Content of invention]

[Problem to solve]

Accordingly, an object of the present invention to provide an electrode pattern and a method of forming an electrode pattern capable of implementing a fine pattern at a relatively low cost and simple process steps will be.

[Measures of problem]

Bo tiVrf ^.

o

Forming a photoresist pattern on the substrate;

Filling the intaglio portion of the photoresist pattern with a conductive paste; And

It provides a method of forming an electrode pattern comprising the step of curing the conductive paste.

In addition, the present invention; And an electrode formed on the substrate, wherein the electrode has an electrode pattern formed in a U shape, a V shape, a trapezoid with an open top, an inverted trapezoid with an open top, or a rectangle with an open top. to provide. 【Effects of the Invention】

The electrode pattern forming method of the present invention has a high degree of design freedom with respect to the size and shape of the pattern and excellent positional accuracy, and can form an electrode pattern having a high resolution and a uniform line width.

In addition, since the photoresist pattern plays a role of supporting the electrode pattern, the quality of the electrode pattern can be improved due to excellent sharpness, flatness, straightness, and the like, and can realize fine and various patterns.

In addition, the photoresist pattern may be selectively peeled off, and if selectively peeled off, the photoresist pattern residues of the view area may be removed, thereby realizing a higher quality product. The photoresist pattern may serve as a support and / or insulation of the electrode pattern.

The method of forming the electrode pattern of the present invention is applicable to various devices requiring fine electrode patterning, and in particular, it is useful to form a touch sensor provided in a touch screen panel (TSP). Can be. [Brief Description of Drawings]

1 is a schematic flowchart of a method of forming an electrode pattern according to an exemplary embodiment of the present invention.

2 is a photograph of the electrode pattern formed according to Examples 1 to 4 under an optical microscope.

3 is a photograph of an electrode pattern formed according to Example 5 under an optical microscope.

4 is a schematic diagram of an electrode pattern cross section according to an embodiment of the present invention. 5 is a schematic diagram of an electrode pattern cross section according to an embodiment of the present invention. FIG. 6 is a photograph of an surface of an electrode pattern observed by an optical microscope according to an embodiment of the present invention.

FIG. 7 is a SEM photograph of the surface of an electrode pattern according to an exemplary embodiment of the present invention. FIG.

8 is a SEM photograph of a cross section of an electrode pattern according to an embodiment of the present invention.

[Specific contents to carry out invention]

Forming method of the electrode pattern of the present invention, forming a photoresist pattern on the substrate; Filling the intaglio portion of the photoresist pattern with a conductive paste; And curing the conductive paste.

And the electrode pattern of this invention is a base material; And an electrode formed on the substrate, wherein the electrode has a U-shape, a V-shape, a trapezoid with an open top, an inverted trapezoid with an open top, or a rectangle with an open top. In the present invention, terms such as first and second are used to describe various components, and the terms are used only for the purpose of distinguishing one component from another component.

In addition, the terminology used herein is for illustrative purposes only. It is used for the purpose of illustration and is not intended to limit the invention. Singular expressions include plural expressions unless the context clearly indicates otherwise. Also, in the present invention, when each component is referred to as being formed "on" or "on" of each component, it means that each component is directly formed on each component, or other components are each It can be formed between the layer, the object, the substrate further.

As the invention allows for various changes and numerous modifications, particular embodiments will be illustrated and described in detail below. However, this is not intended to limit the present invention to a specific disclosed form, it should be understood to include all modifications, equivalents, and substitutes included in the spirit and scope of the present invention.

Hereinafter, a method of forming an electrode pattern according to a specific embodiment of the present invention will be described in detail with reference to the accompanying drawings. Forming method of the electrode pattern of the present invention, forming a photoresist pattern on the substrate; Filling the intaglio portion of the photoresist pattern with a conductive paste; And curing the conductive paste.

1 is a view showing a schematic sequence of a method of forming an electrode pattern according to an embodiment of the present invention.

Referring to FIG. 1, first, a substrate 10 on which an electrode pattern is to be prepared is prepared, and a photoresist composition 20 is applied on the substrate 10 (steps (a) and (b)),

Next, the photoresist pattern 30 is formed by selectively exposing and developing the region to which the photoresist composition 20 is applied using a mask pattern or the like (step (c)). The mask pattern is designed in consideration of the electrode pattern to be finally formed, and the photoresist pattern 30 thus formed has a negative portion 30a and an embossed portion 30b according to selective exposure and development. The intaglio portion 30a of the photoresist pattern 30 is filled with a conductive paste. At this time, although not shown in the drawings, when the conductive paste filled with all the negative portions 30a of the photoresist pattern 30 and is excessively applied, In order to uniformly adjust the application height of the conductive paste to the height of the embossed portion 30b and to flatten the surface, the surface of the applied conductive paste is pushed and flattened by means such as a blade. Can be.

Next, the conductive paste filled with the intaglio portion 30a is cured. Curing of the conductive paste may be performed by heating the conductive paste by heating to a constant temperature, and an electrode pattern 40 is formed by curing the conductive paste (step (d)).

Thereafter, the photoresist pattern 30 can be removed (step (e)). Although FIG. 1 illustrates that the photoresist pattern 30 is removed after the electrode pattern 40 is formed, all of the photoresist patterns 30 may be removed. Hereinafter, a method of forming an electrode pattern according to the present invention will be described in more detail.

According to an embodiment of the present invention, the substrate forming the photoresist pattern may be a substrate. Sing-based substrates include, for example, glass, tempered glass, silicon, aluminum, indium tin oxide (ITO), indium zinc oxide (IZO), molybdenum, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper, poly What is chosen from the group which consists of a silicone, a ceramic, an aluminum / copper mixture, and a polymeric resin can be used, It does not specifically limit. Preferably, the substrate may be a tempered glass substrate.

When the tempered glass is used as the substrate, soda lime and aluminosilicate glass may be applied.

The photoresist pattern may be formed directly on the substrate, or, if necessary, may be formed with another film, layer, film, pattern, or the like interposed on the substrate.

The photoresist pattern may be formed using a photoresist composition and a method of forming a photoresist pattern well known in the art.

At this time, the components constituting the photoresist composition are not particularly limited, and may include a general polymer resin, a photosensitive compound, a solvent, and other additives. Can be.

Representative examples of the polymer resin include phenoxy, polyester, urethane, epoxy, novolac resin, and the like.

Specifically, the novolak-based resin may be a resin obtained by condensation polymerization of a phenol compound, an aldehyde compound, or a ketone compound under an acidic catalyst. For example, the novolak-based resin is a novolak-based resin synthesized by methacresol alone, a novolak-based resin synthesized by paracresol alone, a novolak-based resin using resorcinol, salicylic aldehyde and benzyl aldehyde. Novolak-based resins prepared by mixing, and novolak-based resins prepared by mixing and reacting metacresol, paracresol, resorcinol and the like may be used.

Specific examples of the phenolic compounds include phenol, orthocresol, metacresol, paracresol, 2,3-dimethylphenol, 3,4-dimethylphenol, 3,5-dimethylphenol, 2,4-dimethylphenol, 2,6 -Dimethylphenol, 2,3,6-trimethylphenol, 2-t-butylphenol, 3-t-butylphenol, 4-t-butylphenol, 2-methylresolcinol, 4-methylresolcinol, 5- Methylenezolsol, 4-t-butylcatechol, 2-methoxyphenol, 3-methoxyphenol, 2-propylphenol, 3-propylphenol, 4-propylphenol. 2-isopropylphenol, 2-methoxy-5-methylphenol, 2-t-butyl-5-methylphenol, thymol, isothymol, etc. are mentioned. These may each be used alone or in combination.

Specific examples of the aldehyde-based compound include formaldehyde, formalin, paraformaldehyde, trioxane, acetaldehyde, propylaldehyde, benzaldehyde, phenylacetaldehyde, _α -phenylpropylaldehyde, β-phenylpropylaldehyde, 0-hydroxybenz Aldehyde, _m -hydroxybenzaldehyde, P-hydroxybenzaldehyde, 0-chlorobenzaldehyde, m-chlorobenzaldehyde, P-chlorobenzaldehyde, 0-methylbenzaldehyde, m-methylbenzaldehyde, P-methylbenz Aldehyde, P-ethylbenzaldehyde, pn-butylbenzaldehyde, terephthalate aldehyde and the like. These may each be used alone or in combination.

Specific examples of the ketone compound include acetone, methyl ethyl ketone, diethyl ketone, diphenyl ketone, and each of these is alone or It can be used in combination.

In the photoresist composition, a diazide compound may be used as the photosensitive compound, and the diazide photosensitive compound may be polyhydroxy benzophenone, 1,2-naphthoquinone diazide, and 2-diazo-. It may be a compound prepared by reacting 1-naph with a compound such as -5-sulfonic acid. For example, the diazide-based photosensitive compound 2,3,4-trihydroxybenzophenone-1 prepared by reacting trihydroxy benzophenone and 2-diazo-1-naph-5-sulfonic acid. , 2-naphthoquinonediazide-5-sulfonate; Or 2,3,4,4'-tetrahydroxybenzophenone-1,2-naphthoquinonedia prepared by reacting tetrahydroxy benzophenone and ₂ -diazo-1-naph with -5-sulfonic acid. Zide-5-sulfonate, which may be used alone or in combination. In addition, the mixing ratio of the diazide compound exemplified above is not particularly limited and may be mixed at a ratio well known to those skilled in the art.

As the organic solvent, a conventional organic solvent used in a conventional photoresist composition may be used. For example, glycol ethers, ethylene glycol alkyl ether acetates, diethylene glycols, etc. which can dissolve each component of the photoresist composition and easily form a coating film can be used. Preferably, the organic solvent is propylene glycol methyl ether acetate, ethyl lactate, 2-methoxyethyl acetate, propylene glycol monomethyl ether, methyl ethyl ketone, methyl isobutyl ketone and 1-methyl-2-pyridinone. One or more types can be used from the group which consists of these.

In addition, the photoresist composition may further include a conventional additive to improve the sensitivity of the photoresist, if necessary. More specifically, the photoresist composition may further include additives such as colorants, dyes, plasticizers, adhesion promoters, surfactants, anti-scratching agents, and the like, as necessary.

On the other hand, the compounds exemplified as components of the photoresist composition are presented as an example which can be used, and the pattern forming method of the present invention is not limited to the photoresist composition illustrated above. ^'

The photoresist composition may be applied onto a substrate by conventional application methods including dipping, spraying, spinning and spin coating. Next, an exposure is selectively performed on a region to which the photoresist composition is applied using a mask pattern or the like. The exposure step is a step of placing a mask pattern between the substrate and the light source so that the light from the light source passes through only the portion without the pattern to thereby expose the photoresist composition.

By developing the exposed photoresist composition, a photoresist pattern is formed.

More specifically, the exposed substrate is sufficiently immersed in an alkaline developing aqueous solution and then left until all or almost all of the photoresist film in the portion exposed to light is dissolved. In this case, it is preferable to use an aqueous solution containing alkali hydroxide, ammonium hydroxide or tetramethylammoni zm hydroxide as the developing aqueous solution. When the exposed part is dissolved and removed, the substrate is removed from the developer, washed, and dried to form a photoresist pattern having a desired shape.

The photoresist pattern formed by the above-described process has a negative portion and an embossed portion according to selective exposure and development. The engraved portion is a portion where the substrate or film under the photoresist pattern is exposed, and the embossed portion is a pattern portion having a constant height without exposing the substrate.

According to the electrode pattern forming method of the present invention, the conductive paste is applied by filling the intaglio portion of the photoresist pattern, and then cured, thereby forming the electrode pattern in the shape of the intaglio portion of the photoresist pattern.

The coating of the conductive paste on the intaglio portion of the photoresist pattern may include a blade coating method including a squeeze coating method, a doctor blade coating method, and a spin coating method. coating) and the like, but the present invention is not limited thereto.

In addition, after the conductive paste is applied, the planarization step of filling the intaglio portions of the photoresist pattern and removing the remaining conductive paste and uniformly adjusting the coating height of the conductive paste to the height of the relief portion and flattening the surface is performed. You can do more. At this time, the means or method for removing the remaining conductive paste is not particularly limited. And physical and chemical means such as blades, squeezes, cleaning fluids, and the like.

The conductive paste is not particularly limited as long as the conductive paste is excellent in electrical conductivity and capable of forming an electrode by firing or curing. According to one embodiment of the present invention, the silver paste may include silver (Ag) as a main component. Can be. When the silver paste is used as the conductive paste, the silver paste may include silver powder, a binder, a solvent, a glass frit, and other additives, but the present invention is not limited thereto, and the present invention is not limited thereto. Known silver pastes can be used.

The silver paste has excellent electrical conductivity and is particularly widely used when forming electrode patterns for touch screens. The method of forming an electrode pattern using the silver paste includes a screen printing method, an imprinting method, photolithography, and the like.

In the dual screen printing method, a printed conductive paste composition is printed on a surface of a substrate using a screen having an electrode pattern shape to be formed to a predetermined thickness and then cured to form an electrode pattern. The screen printing method has advantages in that the manufacturing equipment and the process are simpler than the imprinting and photolithography methods, thereby reducing equipment and material costs, but it is difficult to realize a fine pattern of electrode wiring of 80 microns or less.

The gravure offset printing method is a method of forming a pattern on a substrate by first transferring a printed conductive paste composition to a negative gravure with a doctor blade and then transferring the substrate to a flat substrate. The method through the gravure townset has the advantage of reducing the equipment and material costs because the manufacturing equipment and processes are simpler than the photolithography method, but it is difficult to implement a fine pattern of the electrode wiring of 20 microns or less

The imprinting method is a system in which an electrode pattern is formed by applying a pressure stamp to curable resin such as photocurable resin or thermosetting resin. However, there is a disadvantage in that a complex pattern requiring alignment is difficult, and a pattern is difficult to be formed and residues are not easily removed. In particular, In the imprinting method, a pattern may be formed by using a working mold such as polydimethylsiloxane (PDMS), but when applied to a continuous process, residues remain on the mold, which makes work difficult. There is a disadvantage that can be, and the life of the mold is shortened.

In the photolithography method, first, a conductive film is formed on a substrate by a sputtering process, a photoresist is applied on the conductive film, and then a portion of the conductive film is exposed by selectively exposing the photoresist using a mask. The exposed conductive film is removed by etching to form an electrode pattern, and the remaining photoresist is removed to finally complete the electrode pattern. Such photolithography method can realize fine line width, but it must go through complex process because photoresist coating, exposure, development, etching and peeling process must be performed after conductive film deposition under vacuum, and expensive equipment is required for investment cost and production cost. Has the disadvantage of increasing.

On the other hand, the method of forming the electrode pattern of the present invention design the electrode pattern using the photoresist pattern, high design freedom of the line width, size and shape of the electrode pattern and excellent position accuracy, high resolution and uniform line width The electrode pattern which has can be formed. In addition, instead of patterning the conductive film by photolithography, the photoresist pattern is first formed by a general photoresist process, and then a conductive paste can be applied and cured only on the portion to be patterned, such as etching and water washing. Since it does not go through an additional process, it can be carried out in a relatively simple process, there is no burden of additional equipment, material costs can be reduced. According to one embodiment of the present invention, curing the conductive paste may be performed by drying and / or firing for about 3 minutes to about 60 minutes at a temperature of about 60 to about 600 ^° C. Specifically, The solvent may be cured while evaporating the solvent ^at about 60 to about 250 ^° C., or calcined at a glass transition temperature of about 60 ^° C. or less, to form an electrode pattern, but is not limited thereto.

As described above, the conductive paste is heated to a constant By baking, the electrode pattern is formed in the shape of the intaglio portion of the photoresist pattern.

Thereafter, the photoresist pattern may be removed, partially removed, or all removed as necessary. If the photoresist pattern is left without being removed, it may serve as a support and / or an insulating part of the electrode pattern.

On the other hand, when removing all of the photoresist pattern, it is possible to remove the residue of the conductive paste that can be used as a transparent electrode and may remain in the embossed portion of the photoresist pattern to improve the reliability of the electrode pattern Can be helpful. In addition, when only a part of the photoresist pattern is removed, the remaining part that is not removed may support the formed pattern and function as an insulating layer capable of reducing migration and noise of the electrode metal.

The removal of the photoresist pattern may be performed using a method of removing the photoresist pattern, which is well known in the art, such as selecting an appropriate stripping solution and adjusting the exposure time to the stripping solution.

According to the method of forming the electrode pattern of the present invention as described above, it is possible to form an electrode pattern having a high degree of design freedom and excellent positional accuracy with respect to the size and shape of the pattern, and having a high resolution and uniform line width. In particular, a pattern having a fine line width of 10 microns or less can be easily formed.

In addition, during the formation of the electrode pattern, the photoresist pattern serves to support the electrode pattern, so that the sharpness, flatness, straightness, and the like can be improved, thereby improving the quality of the electrode pattern and realizing fine and various patterns. . Furthermore, the photoresist pattern may be selectively peeled off or not peeled off, and when peeling off, residues that may remain in the embossed portions may be removed, and if not peeled off, the photoresist pattern may serve as a support and / or an insulating part of the electrode pattern. can do.

In addition, since the electrode pattern is formed by filling the intaglio portion of the photoresist pattern and curing, the required property reference values such as viscoelasticity and development margin required for the conductive pattern forming electrode pattern may be lowered. Even a low-cost conductive paste can form a high quality pattern of fine line width, which is advantageous for improving productivity. On the other hand, according to another aspect of the invention, the substrate; And an electrode formed on the substrate, wherein the electrode has an electrode pattern formed in a U-shape, a V-shape, a trapezoid with an open top, an inverted trapezoid with an open top, or a rectangle with an open top. Is provided.

The electrode pattern of the present invention can be produced by the method of forming the electrode pattern described above. ^'

According to one example, the electrode pattern, the substrate; A photoresist pattern formed in a form having an intaglio and an intaglio on the substrate; And it may include an electrode formed in the form of filling the intaglio portion of the photoresist pattern.

The electrode may be formed to fill the intaglio portion of the photoresist pattern by applying a photoresist composition on the substrate, selectively exposing the photoresist composition, and developing the exposed photoresist composition, This means that the electrode is formed to fill all or a part of the intaglio portion having a lower height, that is, the photoresist is removed and the height is lower than the periphery.

That is, as described above in the method of forming the electrode pattern, the conductive paste for forming the electrode pattern is filled and cured in the intaglio portion of the photoresist, and the electrode may be formed. The height of the formed portion may be the same as the surrounding photoresist relief.

Alternatively, the height of the electrode may be formed to fill only a part of the intaglio. That is, during the drying and curing of the conductive paste, the solvent included in the conductive paste may be removed or the volume of the conductive paste may be reduced, so that an electrode pattern may be formed in a form in which an electrode is formed only at a portion of the intaglio portion.

The electrode is formed only on a part of the intaglio portion when the cross section of the electrode is observed. It means that the electrode is formed in a coated form on the exposed substrate having a predetermined thickness, more specifically, the cross-section of the formed electrode in the U-shaped, V-shaped, trapezoidal shape of the upper side, inverted trapezoidal shape of the upper side It means that the upper portion is formed in the shape of an open rectangle.

4 is a schematic diagram of an electrode pattern cross section according to an embodiment of the present invention. 4, the substrate 10; A photoresist pattern 30 formed on the substrate in a form having a concave portion 30a and an embossed portion 30b; And an electrode 40 formed to fill the intaglio portion of the photoresist pattern.

In particular, in the case of FIG. 4, when the cross section of the electrode is observed, the surface (side) of the portion (negative portion) 30a from which the photoresist has been removed and on the substrate 10 exposed by the portion from which the photoresist has been removed The electrode 40 is formed in a coated form, and it can be clearly seen that the cross-section of the formed electrode has a U-shape, a V-shape, an open trapezoidal shape at the top, an inverted trapezoidal shape at the top, a rectangular shape at the top, and the like. have.

As described above in the method of forming the electrode pattern, at least part or all of the embossed portion 30b of the photoresist pattern may be removed after forming the electrode.

5 is a schematic diagram of an electrode pattern cross section according to an embodiment of the present invention. Referring to FIG. 5, the substrate 10; A photoresist pattern 30 formed on the substrate in a form having a concave portion 30a and an embossed portion 30b; And the electrode 40 formed in the form of filling the intaglio portion of the photoresist pattern, it can be clearly confirmed that the form removed to the photoresist pattern 30 remaining in the relief portion (30b).

As described above, the photoresist pattern formed in the form having the engraved portion and the embossed portion may not be removed, partially removed, or all removed as necessary. If the photoresist pattern is left without being removed, it may serve as a support and / or an insulating part of the electrode pattern.

And, when removing at least a portion of the photoresist pattern, Residue of the conductive paste, which may be partially remaining on the embossed portion of the photoresist pattern, may be removed to help improve the reliability of the electrode pattern. Depending on the degree of removal, the remaining portions that are not removed may be formed. As described above, it can function as an insulating layer capable of supporting the pattern and reducing noise.

Electrode pattern according to an embodiment of the present invention, due to the above-described characteristics, the line width of the electrode is about or less, preferably about 1 to about 10 m, it is possible to implement an ultra-fine line width, accordingly, fine electrode patterning It can be usefully applied to form a variety of devices that require, in particular, a touch sensor or the like provided in a touch screen panel (TSP). Hereinafter, the formation method of the electrode pattern of this invention is demonstrated in detail in the following Example. However, the following examples are merely to illustrate the invention, but the content of the present invention is not limited by the following examples.

Formation of electrode pattern

Example 1

As a substrate for forming an electrode pattern, a soda lime glass substrate generally used in the technical field of the present invention was prepared.

The photoresist composition (DTFR-JC800, positive type, manufactured by Dongjin Samicam) was applied on the substrate to a thickness of 6 by spin coating, and then pre-heated at 90 ^° C. for 120 seconds using a hot plate. bake. The thickness measured after prebaking was 3 / m.

Next, a mask pattern for forming a pattern having a line width of 10 is applied to the region to which the photoresist composition is applied, and 365 nm wavelength light is accumulated by integrating 365 nm wavelength light using a Proximity exposure machine (manufacturer: SEIWA). The exposure amount was exposed.

A substrate on which a part of the photoresist composition applied by exposure was cured was placed in a developer (product name: DPD-200, alkali developer, manufacturer: Dongjin Semicam) at 25 ^° C. The photoresist pattern was formed by immersion and development for 60 seconds. The formed photoresist pattern had a concave portion and a relief portion of a mesh pattern having a line width of 10, depending on the form of the mask pattern.

Filled conductive paste containing silver (Ag) in the intaglio portion of the formed photoresist pattern (Product Name: DNI-100, Manufacturer: Dongjin Semicam, Silver particle size 30 to 40nm), and using a squeegee blade, filled conductive The surface was flattened so that the height of the paste was matched with the height of the relief of the photoresist pattern.

Then, using an IR curing machine (manufacturer: Yeongam), heating was carried out at 85 ^° C. for 13 minutes to cure the conductive paste.

After confirming that the conductive paste was cured to form an electrode, the substrate was immersed in a solution for photoresist gegger (product name: DPS7300, amine removal liquid, manufacturer: Dongjin Semicam) to remove all photoresists. Example 2

An electrode pattern was formed in the same manner as in Example 1 except that the line width was set to 8 .; Example 3

An electrode pattern was formed in the same manner as in Example 1 except that the line width was set to 5. Example 4

An electrode pattern was formed in the same manner as in Example 1 except that the line width was set to 3. Example 5

An electrode pattern was formed in the same manner as in Example 1, except that the line width was set to 50 mW, and a large area pattern of several hundred mW was formed around it. FIG. 2 is a photograph of an electrode pattern formed at each line width according to Examples 1 to 4 using an optical microscope.

Referring to Figure 2, the line width of 10, 8 卿, 5 ^ m, 3 / m, respectively, it can be seen that the mesh pattern (Mesh pattern) electrode pattern is formed, it is confirmed that the pattern of various line widths are well implemented Can be.

Referring to Figure 3, it can be seen that a large area pattern of 50 fine line width and hundreds of microns width is formed on one substrate, it can be confirmed that the electrode pattern of various forms can be well implemented simultaneously by the present invention have. Fig. 6 is a photograph of the surface of the electrode pattern formed by the above embodiment after the electrode was formed and before the photoresist was removed, the surface of which was observed with an optical microscope. 6, the substrate; A photoresist pattern formed in a form having an intaglio and an intaglio on the substrate; And of the photoresist pattern. An electrode pattern including an electrode formed in the form of filling the intaglio may be confirmed.

Specifically, in FIG. 6, the black dark portion is an embossed portion of the photoresist before removal, and the bright portion is a form in which an electrode of a metal component is formed on the negative portion of the photoresist pattern. The electrode has a V-shaped cross section or an inverted trapezoid, so that the center of the electrode can be observed relatively dark. 7 is a SEM photograph of the surface of the electrode pattern implemented in Example 3 (line width 5), Figure 8 is a SEM observation of the cross section of the electrode pattern implemented in Example 3 (line width 5 / im) It is a photograph.

Referring to FIGS. 7 and 8, in the electrode formed in the form of filling the intaglio portion of the photoresist pattern, the photoresist pattern remaining in the relief portion is completely removed to clearly confirm that the electrode is formed in the inverted trapezoidal shape on the substrate. Can be. [Explanation of code]

10: description

20: applied photoresist composition 30: photoresist pattern

30a: intaglio

30b: embossed

40: electrode pattern

Claims

[Patent Claims]

[Claim 1]

Forming a photoresist pattern on the substrate;

Filling the intaglio portion of the photoresist pattern with a conductive paste; Forming an electrode pattern comprising the step of curing the conductive paste.

[Claim 2]

The method of claim 1,

After the step of filling the intaglio portion of the photoresist pattern with the conductive paste, further comprising planarizing the surface of the conductive paste.

[Claim 3]

The method of claim 1,

After curing the conductive paste, further comprising removing at least a portion of the photoresist pattern.

[Claim 4]

According to claim 1,

Forming a photoresist pattern on the substrate,

Applying a photoresist composition on the substrate;

Selectively exposing a region to which the photoresist composition is applied; And

Developing the exposed photoresist composition to form a photoresist pattern.

[Claim 5]

According to claim 1, And the conductive paste contains silver (Ag).

[Claim 6]

The method of claim 1,

Method for forming an electrode pattern, the substrate is glass or tempered glass

[Claim 7]

The method of claim 1,

And the electrode pattern is a touch sensor of a touch screen panel.

[Claim 8]

materials; And

An electrode formed on the substrate,

The electrode pattern is formed in the shape of a cross-section U-shaped, V-shaped, the upper trapezoidal trapezoid, the upper open inverted trapezoidal shape, or the upper open rectangle.

[Claim 9]

According to claim 8,

materials;

A photoresist pattern formed in a form having an intaglio and an intaglio on the substrate; And

Electrode pattern comprising an electrode formed to fill the intaglio portion of the photoresist pattern.

[Claim 10]

The method of claim 8,

The substrate may include glass, tempered glass, silicon, aluminum, indium tin oxide (ITO indium zinc oxide, molybdenum, silicon dioxide, doped silicon dioxide, An electrode pattern comprising at least one member selected from the group consisting of silicon nitride, tantalum, copper, polysilicon, ceramics, aluminum / copper mixtures and polymerizable resins.

【Claim 11】

According to claim 18,

The electrode is formed with a line width of 10 or less, electrode pattern. [Claim 12]

A touch screen panel comprising the electrode pattern of claim 18.