WO2016074948A1 - Composant électroluminescent et procédé de fabrication d'un composant électroluminescent - Google Patents

Composant électroluminescent et procédé de fabrication d'un composant électroluminescent Download PDF

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Publication number
WO2016074948A1
WO2016074948A1 PCT/EP2015/075242 EP2015075242W WO2016074948A1 WO 2016074948 A1 WO2016074948 A1 WO 2016074948A1 EP 2015075242 W EP2015075242 W EP 2015075242W WO 2016074948 A1 WO2016074948 A1 WO 2016074948A1
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WIPO (PCT)
Prior art keywords
encapsulation
scattering particles
layer
light
electrode
Prior art date
Application number
PCT/EP2015/075242
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German (de)
English (en)
Inventor
Richard Baisl
Original Assignee
Osram Oled Gmbh
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Filing date
Publication date
Application filed by Osram Oled Gmbh filed Critical Osram Oled Gmbh
Publication of WO2016074948A1 publication Critical patent/WO2016074948A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • OLEDs organic light emitting diodes
  • optical losses for example, due to total reflection and absorption, to a reduction of the decoupled
  • additional scattering films or coupling-out structures are usually used in the OLED substrate.
  • the latter can be achieved, for example, by roughening or otherwise structuring the surface of the substrate or else by scattering particles within the substrate
  • Substrate are formed. Such measures are also referred to as internal coupling-out structures.
  • OLEDs which mimic light in a direction away from the substrate, internal coupling-out structures are not possible since the light is emitted by a transparent electrode lying opposite the substrate. Nevertheless, an increase in the
  • an additional layer such as, for example, a scattering film is usually used in the prior art.
  • At least one object of certain embodiments is to specify a light-emitting component in which it is possible to determine the coupling-out efficiency, in particular without
  • Embodiments are to specify a method for producing a light-emitting component.
  • the emissive device to a functional stack of layers containing at least one light-emitting layer, which is adapted to generate light during operation of the device. Furthermore, the device has a first
  • one of the electrodes as the anode and the other of the electrodes as the anode and the other of the electrodes
  • Electrodes may be formed as a cathode, each injecting holes or electrons from different sides into the at least one light-emitting layer. By recombination of holes and electrons, light can be generated in the light-emitting layer by electroluminescence during operation of the component.
  • emissive device on an encapsulation, which has an encapsulation material.
  • Encapsulation arrangement can be arranged in particular over the electrodes and the functional layer stack.
  • the encapsulating material is suitable for the functional Layer stack and the first and second electrodes from harmful substances from the environment, for example
  • the encapsulation arrangement is in the form of thin-film encapsulation with at least one encapsulation layer of an oxide, nitride or
  • Oxynitride formed as encapsulating material is formed as encapsulating material.
  • the scattering particles are in the encapsulating material of
  • Encapsulating material is transparent and
  • the scattering particles (9) have a size of less than or equal to 50 nm.
  • the encapsulation arrangement may have a thickness of less than or equal to 5 ⁇ m, in particular less than or equal to 50 nm.
  • Electrodes free of scattering particles.
  • the component has at least one layer that is transparent and contains the scattering particles.
  • the transparent layer with scattering particles is in particular selected from the electrodes and at least one encapsulation layer of the
  • the scattering particles are embedded in the transparent layer containing the scattering particles.
  • the layer essentially comprises or is formed by a functional material that the
  • Electrode so are the scattering particles in one
  • the layer with the scattering particles is an encapsulation layer of the
  • the light-emitting component may thus comprise at least one electrode, which is transparent and contains scattering particles, and / or an encapsulation layer having a
  • Encapsulant material which is transparent and contains scattering particles.
  • the light-emitting component has at least one electrode and / or at least one encapsulation layer that is simultaneously formed as a scattering layer.
  • the coupling-out efficiency can be improved by the transparent electrode and / or the transparent encapsulation layer with the scattering particles without additional scattering layer compared to a corresponding device without such measures.
  • a transparent layer which may also be a sequence of layers, which is transparent to visible light, in particular for light, which is generated in the operation of the device in the light-emitting layer.
  • a transparent layer may be clear translucent or at least partially light-scattering and / or partially light-absorbing,
  • a layer designated as transparent in particular in the case of embedded scattering particles, so that a layer designated as transparent, for example, can also be diffuse or milky translucent and thus translucent.
  • Component during training at least one
  • Encapsulation arrangement scattering particles embedded in a functional material of the layer.
  • the scattering particles are applied together with the functional material of the relevant layer, whereby the scattering particles are embedded directly in the layer.
  • hole injecting or electron injecting material and in the case of an encapsulation layer, embedded in a material which may form a barrier or part of a barrier to ambient gases.
  • the light is
  • the emitting device formed as an organic light-emitting device having a substrate on which the electrodes, the functional layer stack and the encapsulation arrangement are arranged.
  • the substrate on which the electrodes, the functional layer stack and the encapsulation arrangement are arranged.
  • At least one of the first and second electrodes is
  • the functional layer stack is formed in this case as an organic functional layer stack and has at least one organic light
  • the organic light-emitting component may in particular be designed as an organic light-emitting diode (OLED).
  • OLED organic light-emitting diode
  • the organic functional layer stack may include layers of organic polymers, organic oligomers,
  • the organic functional layer stack may have a functional layer designed as a hole transport layer for effective hole injection into the light
  • a hole transport layer for example, tertiary amines, carbazole derivatives, conductive polyaniline or
  • Materials for the light-emitting layer are suitable Materials that have a radiation emission due to
  • organic functional layer stack may have a functional layer which is referred to as
  • Electron transport layer is formed.
  • the layer stack can also electron and / or
  • functional layer stacks may also include a plurality of organic light emitting layers disposed between the electrodes.
  • a formed encapsulation arrangement is understood as meaning a device which is capable of providing a barrier to atmospheric substances, in particular to moisture and oxygen and / or to other damaging substances such as corrosive gases.
  • the thin-film encapsulation is designed such that it is at most very small of atmospheric substances Shares can be penetrated.
  • this barrier effect is essentially produced by encapsulation layers embodied as thin layers which are part of the encapsulation arrangement or which form the encapsulation arrangement.
  • the encapsulation layers of the encapsulation arrangement generally have a thickness of less than or equal to a few 100 nm.
  • the encapsulation arrangement preferably has a layer sequence with a plurality of the thin encapsulation layers, each having a thickness of greater than or equal to one atomic layer or greater than or equal to 1 nm or greater than or equal to 5 nm and less than or equal to 100 nm or less than or equal to 70 nm or smaller or equal to 50 nm or less than or equal to 20 nm or less than or equal to 10 nm.
  • the encapsulation layers can be produced, for example, by means of an atomic layer deposition method ("atomic layer
  • ALD atomic layer deposition
  • MLD molecular layer deposition method
  • Encapsulation layers of the encapsulation device are oxides, nitrides or oxynitrides such as alumina, zinc oxide, zirconia, titania, hafnia, lanthana, tantalum oxide.
  • Encapsulation arrangement at least one or a plurality of further layers, ie in particular barrier layers and / or passivation layers, which by
  • PECVD plasma-enhanced chemical vapor deposition
  • Gas phase deposition such as chemical vapor deposition (CVD) are deposited.
  • Suitable materials for this may be the materials mentioned in advance in connection with ALD and MLD as well as silicon nitride, silicon oxide, silicon oxynitride, indium tin oxide,
  • the one or more further layers may each have a thickness between 1 nm and 5 ym and preferably between 1 nm and 400 nm, the limits being included.
  • the encapsulation arrangement contains scattering particles, the encapsulation arrangement is preferred as
  • Encapsulation material is formed, wherein the scattering particles in the encapsulation material of the encapsulation layer
  • the encapsulation layer in this case preferably has a thickness that is greater than or equal to the size of the scattering particles.
  • Each encapsulation layer taken separately, has a thickness which is greater than or equal to the size of the scattering particles, so that scattering particles are embedded in each of the respective encapsulation layers. Furthermore, it may also be possible for several encapsulation layers to be thinner in each case than the size of the
  • Scattering particles the encapsulation layers taken together but have a thickness that is greater than or equal to the size of the scattering particles.
  • the substrate comprises one or more materials in the form of a layer, a plate, a foil or a laminate, which are selected from glass, quartz, plastic, metal, silicon wafers.
  • a transparent substrate this preferably has glass or a transparent plastic, for example in the form of a glass layer, glass film, plastic film,
  • Plastic plate or glass plate on or off it. In the case of a non-transparent substrate this can be
  • Plastic film or sheet, an opaque glass sheet or plate or a metal foil In the event that the substrate has plastic or is plastic, it can
  • a further encapsulation arrangement is arranged, which may be formed as the encapsulation arrangement described above.
  • the further encapsulation arrangement may, for example, be arranged between the first electrode and the substrate and / or on the side of the substrate which is remote from the first electrode.
  • the further encapsulation arrangement has at least one transparent encapsulation layer which, as described above
  • first electrode formed transparent, so that in the light-emitting layer generated light can be emitted through the transparent first electrode and the substrate.
  • Such an organic light emitting device may also be referred to as a so-called "bottom emitter”.
  • the transparent first electrode in this case may contain scattering particles as described above.
  • the second electrode may be reflective in the case of a device designed as a bottom emitter.
  • Transparent electrode formed so that light generated in the light-emitting layer can be emitted through the transparent electrode and the encapsulation device.
  • Component can also be called a “top emitter”
  • the first electrode may be in the case of a device formed as a top emitter
  • the light is
  • emissive component formed simultaneously as a bottom emitter and top emitter and thus has a transparent first electrode and a transparent second electrode which between a transparent substrate and a
  • the light-emitting component can be made transparent in this case.
  • the scattering particles can hereby be seen from the light-emitting layer one or both sides, ie in one or more layers selected from the first electrode, the second electrode and at least one encapsulation layer of the encapsulation arrangement.
  • a transparent electrode as a functional electrode material has a transparent conductive oxide or consists of a transparent conductive oxide.
  • Transparent conductive oxides are transparent, conductive materials, typically metal oxides, such as
  • zinc oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or indium tin oxide (ITO).
  • binary oxide for example, zinc oxide, tin oxide, cadmium oxide, titanium oxide, indium oxide or
  • Metal oxygen compounds such as ZnO, Sn0 2 or ⁇ 2 ⁇ 3 also include ternary metal oxygen compounds, such as Zn 2 Sn0 4 , CdSnO 3, ZnSnO 3, Mgln 2 0 4 , GalnO 3, ⁇ 2 ⁇ 2 ⁇ 5 or In 4 Sn30i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
  • ternary metal oxygen compounds such as Zn 2 Sn0 4 , CdSnO 3, ZnSnO 3, Mgln 2 0 4 , GalnO 3, ⁇ 2 ⁇ 2 ⁇ 5 or In 4 Sn30i 2 or mixtures of different transparent conductive oxides to the group of TCOs.
  • TCOs do not necessarily correspond to one
  • the electrode material may for example by ALD, MLD, sputtering or another in advance in
  • a reflective electrode has a metal which may be selected from aluminum, barium, indium, silver, gold, magnesium, calcium and lithium as well as compounds, combinations and alloys thereof.
  • the reflective further electrode Ag, Al or alloys with these
  • the scattering particles comprise a metal, for example gold, silver, platinum,
  • the scattering particles in this case may have a size greater than or equal to 1 nm or greater than or equal to 5 nm or greater than or equal to 10 nm.
  • the scattering particles may have a size of less than or equal to 100 nm or less than or equal to 50 nm or less than or equal to 30 nm or less than or equal to 20 nm, or less than or equal to 10 nm
  • Stray particles can also be embedded in thinner layers such as encapsulation layers.
  • the layer containing the scattering particles for example an electrode or an encapsulation layer, is produced using an ALD method or an MLD method.
  • the functional material of the respective scattering particles-containing layer are fed to a coating chamber in which the layer is produced with scattering particles.
  • This can be done in particular in the case of an ALD method or MLD method in which the different starting materials are alternately supplied to the coating chamber.
  • the scattering particles may be admixed with at least one of the starting materials and thus embedded in the growing layer during the growth of the layer become.
  • the liquid can be used together with the
  • Streupumblen are transferred into small droplets, which are then fed to the coating chamber.
  • the DLI method can be performed in combination with the ALD or MLD method or in combination with another method suitable for the layer containing the scattering particles
  • Figure 1 is a schematic representation of an example of a
  • Figures 2A to 2C are schematic representations of a light
  • Figure 3 is a schematic representation of a light
  • FIGS. 4A and 4B are schematic representations of a light-emitting component and of a method for producing the light-emitting component according to a further exemplary embodiment
  • Figures 5A and 5B are schematic representations of a light
  • Figure 6 is a schematic representation of a light
  • identical, identical or identically acting elements can each be provided with the same reference numerals.
  • the illustrated elements and their proportions with each other are not to be regarded as true to scale, but individual elements, such as layers, components, components and areas, for better representation and / or better understanding may be exaggerated.
  • the light-emitting components of the exemplary embodiments shown are designed, for example, as organic light-emitting components.
  • FIG. 1 shows the basic structure of an organic light-emitting component 100, which is referred to as
  • OLED organic light emitting diode
  • the organic light-emitting component 100 which may also be referred to below as OLED 100, has a substrate 1 on which between a first electrode 2 and a second electrode 4 a functional layer stack 3 in the form of an organic functional layer stack with at least one light emitting layer is arranged so that in operation of the OLED 100 in the functional
  • Layer stack 3 light is generated. At least one of the electrodes 2,4 is transparent. Depending on which of the electrodes 2, 4 and optionally further
  • Elements of the device 100 are formed transparent, the light-emitting device 100 in operation emits light through the first electrode 2 and the substrate 1 and / or through the second electrode 4 and the overlying
  • the OLED 100 is to emit light, for example, through the substrate 1, it is called a bottom emitter
  • the substrate 1 is transparent and
  • the substrate 1 for example, in the form of a glass plate or glass layer.
  • the substrate 1 for example, in the form of a glass plate or glass layer.
  • the substrate 1 for example, in the form of a glass plate or glass layer.
  • the substrate 1 can be encapsulated with an encapsulation arrangement which can be arranged between the substrate 1 and the first electrode 2 and / or on the side of the substrate 1 facing away from the first electrode 2.
  • the OLED 100 is to emit light in the direction away from the substrate 1 through the second electrode 4 and is embodied as a so-called top emitter, this can
  • Substrate 1 also have an opaque material, for example a metal foil when no radiation through the substrate 1 is desired.
  • the substrate 1 and the first electrode 2 may also be formed together as a metal foil.
  • At least one of the electrodes 2, 4 is transparent and has as electrode material, for example, a transparent conductive oxide such as
  • the other electrode may preferably be reflective and comprise, for example, a metal such as silver or aluminum.
  • the electrodes 2, 4 are preferably large area and
  • Luminous source in particular as a surface light source, may be formed.
  • Large-area may mean that the organic light-emitting element 100 has an area greater than or equal to a few square millimeters, preferably greater than or equal to one square centimeter, and particularly preferably greater than or equal to one square decimeter
  • the at least one the electrodes 2, 4 of the light-emitting component 100 is structured, whereby by means of the light-emitted component 100 a spatially and / or temporally structured and / or variable luminous impression,
  • electrode connecting pieces 5 designed as electrical contact leads can be made transparent or non-transparent and can comprise or be, for example, a TCO and / or a metal.
  • emitting layer further organic layers, for example one or more selected from a
  • Hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, and a charge generation layer (CGL) which are suitable holes
  • Isolator 6 may be present, for example with or made of polyimide, for example, the electrodes 2, 4th
  • Embodiment of the individual layers of the OLED 100 also insulator layers 6 may not be necessary and may not be present, such as appropriate
  • the encapsulation arrangement 7 is particularly preferably designed as a thin-film encapsulation which has at least one or a plurality of encapsulation layers of one or more encapsulation materials.
  • Encapsulation layers can be applied, for example, by means of an ALD or MLD method.
  • Atomic layer and less than or equal to 100 nm are for example alumina, zinc oxide, zirconia,
  • Titanium oxide, hafnium oxide, lanthanum oxide, tantalum oxide Alternatively or in addition to produced by ALD or MLD
  • Encapsulation layers the encapsulation 7 at least one or a plurality of further layers, ie in particular barrier layers and / or
  • the encapsulation arrangement 7 can also have a glass cover which is adhesively bonded to the substrate 1, for example in the form of a glass substrate having a cavity by means of an adhesive layer. In the cavity can continue to
  • Moisture absorbing material such as zeolite
  • Adhesive layer for attaching the lid on the substrate itself to be absorbent for damaging substances and / or adhesive layer structures may be present. Furthermore, viewed from the substrate 1 on the encapsulation arrangement 7, as shown in Figure 1, a protective layer 8 may be arranged, which can form a scratch protection and, for example, a paint, a glued or laminated film, a glued or glued glass plate or a combination may have it.
  • the elements of the OLED 100 may additionally or alternatively have corresponding features of the embodiments described above in the general part.
  • FIG. 2A shows an exemplary embodiment of a light
  • emitting device 100 which is designed as a top emitter and the light in operation by the second electrode 4, the encapsulation assembly 7 and the
  • Protective layer 8 radiates.
  • Protective layer 8 are therefore transparent.
  • the substrate 1 may be opaque. It may also be possible that no protective layer 8 is present.
  • the first electrode 2 may preferably be reflective. As an alternative to the exemplary embodiment shown, it is also possible that the light-emitting component 100 shown in FIG. 2A is designed to be transparent and thus also emits light additionally through the first electrode 2 and the substrate 1.
  • the transparent encapsulation arrangement 7 is designed as a thin-film encapsulation as described above and has a plurality of transparent encapsulation layers 71, 72, 73 which have one or more of the encapsulation materials described above. Purely by way of example, three encapsulation layers 71, 72, 73 are shown in the exemplary embodiment shown, wherein the encapsulation arrangement 7 can also have more or fewer encapsulation layers.
  • the encapsulation arrangement 7 in the exemplary embodiment shown has a transparent encapsulation layer 71 which contains scattering particles 9.
  • Encapsulation layers 72, 73 are also transparent.
  • the encapsulation arrangement 7 simultaneously acts as a scattering layer through the encapsulation layer 71 with the embedded scattering particles 9. This makes it possible, without additional process step in one as a top emitter
  • FIG. 2B shows a method for producing the light-emitting component 100 shown in FIG. 2A. Here, represented by a method step 11, on the substrate 1, the first electrode 2, above the
  • Electrode 4 applied.
  • the protective layer 8 is applied in a further method step 13.
  • the scattering particles 9 typically have a thickness of less than or equal to 100 nm, the scattering particles 9 preferably have a size of less than or equal to 100 nm and particularly preferably less than or equal to 50 nm, so that the scattering particles 9 can be embedded in the encapsulation material of the encapsulation layer 71. With such a particle size, the light scattering takes place as so-called Mie scattering.
  • the scattering particles 9 comprise, for example, a metal such as gold, silver, titanium or another material mentioned above in the general part.
  • Scattering particles 9 become these during the formation of the encapsulation layer 71 in the encapsulation material
  • the encapsulation layer 71 may in particular be produced by means of an ALD or MLD method as described above. As shown in Figure 2C, this will be
  • Starting materials 21, 22, 23 are provided, which are alternately supplied to a coating chamber 20. If, for example, as the encapsulating material of the encapsulation layers 71, 72, 73 Al 2 O 3 are prepared, can be used as starting material 21 trimethylaluminum (TMA) and further Starting material 22 H 2 O are used.
  • TMA trimethylaluminum
  • Direct liquid injection experienced (DLI method) can be used. This can be especially true in the case
  • the starting materials are gaseous. However, it is not necessary that at the
  • Process gases that is, the starting materials 21, 22 and, if appropriate, further gases which are necessary for the deposition process, can be used as additional starting material 23 via an additional line with the aid of a DLI system
  • Gas stream with a carrier gas and the scattering particles 9 are fed into the coating chamber 20.
  • a carrier gas and the scattering particles 9 are fed into the coating chamber 20.
  • helium can be used as the carrier gas. This allows an encapsulation layer with silicon nitride as
  • Encapsulating material and embedded therein scattering particles 9 are produced.
  • Scattering particles in the growing encapsulation material embed. Furthermore, it may be advantageous under some circumstances, after the deposition of scattering particles 9 a
  • FIG. 3 shows a further exemplary embodiment of a light-emitting component 100 that, in comparison to the previous exemplary embodiment, has an encapsulation arrangement 7 which has a plurality of encapsulation layers 71, 72 with embedded scattering particles 9.
  • encapsulation arrangement 7 which has a plurality of encapsulation layers 71, 72 with embedded scattering particles 9.
  • two encapsulation layers 71, 72 are shown
  • Scattering particles 9 included it is also possible for more than two encapsulation layers or even all encapsulation layers of an encapsulation arrangement to contain scattering particles.
  • the encapsulation layers 71, 72 containing the scattering particles 9 can be an identical encapsulation material or else different
  • Encapsulation layers 71, 72 with the scattering particles 9 can, as shown in FIG. 3, be arranged directly above one another. Furthermore, it is also possible that between encapsulation layers with scattering particles. 9
  • Encapsulation layers are arranged without scattering particles 9.
  • FIG. 4A shows a light-emitting component 100 according to a further exemplary embodiment, which in comparison with the two previous exemplary embodiments of FIGS to 3 is designed as a bottom emitter. Accordingly, in the light emitting device 100 of FIG. 4A, the first electrode 2 and the substrate 1 are transparent
  • the second electrode 4 may be formed, for example, reflective.
  • the first electrode 2 has, as a functional material, a transparent electrode material such as, for example, a TCO, such as indium tin oxide or aluminum tin oxide, in which scattering particles 9 are embedded.
  • a transparent electrode material such as, for example, a TCO, such as indium tin oxide or aluminum tin oxide
  • the conductive first electrode 2 can be simultaneously used as a scattering layer.
  • the functionality of a scattering layer and an electrode are thus connected in a single layer.
  • the scattering particles 9 can, as in connection with the
  • FIG. 4B shows a method for producing the light-emitting component 100 of FIG. 4A.
  • a first method step 11 ⁇ the substrate 1
  • Step 12 ⁇ the conductive first electrode 2 with the embedded scattering particles 9 deposited. If necessary, can be structured in a further method step, the first electrode 13 ⁇ . 2 Be it, as a further process step 14 ⁇ shown, the
  • Process step 15 ⁇ applied the encapsulation 7 and optionally the protective layer 8.
  • Process step 15 ⁇ applied the encapsulation 7 and optionally the protective layer 8.
  • Encapsulation arrangement 7 this can also be formed in the form of a glued glass lid glued above.
  • the production of the first electrode 2 with the embedded scattering particles 9 can take place, for example, by means of an ALD method, as in connection with FIG. 2C
  • the electrode deposition takes place on the substrate 1, which may be made of glass, for example, the manufacturing process at higher temperatures, that is at temperatures that are detrimental to the
  • Waxing temperatures are usually limited to below 100 ° C.
  • FIG. 5A shows a light-emitting component 100 according to a further exemplary embodiment, which is compared to the exemplary embodiment of FIG. 4A as a top emitter
  • Layer stack 3 are produced.
  • ⁇ ⁇ is the second electrode 4 with scattering particles 9
  • FIG. 6 shows a further exemplary embodiment of a light-emitting component 100 which is transparent
  • scattering particles are embedded in the encapsulation arrangement.

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  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne un composant électroluminescent comprenant un empilement de couches fonctionnelles (3) qui présente au moins une couche électroluminescente qui est conçue pour produire de la lumière lors du fonctionnement du composant, une première électrode (2) et une deuxième électrode (4) qui sont conçues pour injecter des porteurs de charge dans l'empilement de couches fonctionnelles (3) lors du fonctionnement, et un ensemble d'encapsulation (7) qui présente un matériau d'encapsulation et est disposé au-dessus des électrodes (2, 4) et de l'empilement de couches fonctionnelles (3), au moins l'une des électrodes (2, 4) étant réalisée de manière transparente et contenant des particules de diffusion (9) et/ou le matériau d'encapsulation étant réalisé de manière transparente et contenant des particules de diffusion (9). Par ailleurs, l'invention concerne un procédé de fabrication du composant électroluminescent.
PCT/EP2015/075242 2014-11-11 2015-10-30 Composant électroluminescent et procédé de fabrication d'un composant électroluminescent WO2016074948A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014222946.4A DE102014222946A1 (de) 2014-11-11 2014-11-11 Licht emittierendes Bauelement und Verfahren zur Herstellung eines Licht emittierenden Bauelements
DE102014222946.4 2014-11-11

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Publication number Priority date Publication date Assignee Title
WO2023092688A1 (fr) * 2021-11-25 2023-06-01 深圳市华星光电半导体显示技术有限公司 Panneau d'affichage et son procédé de fabrication, et appareil électronique

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