WO2016071086A1 - Tranche d'épitaxie, composant et procédé de fabrication d'une tranche d'épitaxie et d'un composant - Google Patents

Tranche d'épitaxie, composant et procédé de fabrication d'une tranche d'épitaxie et d'un composant Download PDF

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Publication number
WO2016071086A1
WO2016071086A1 PCT/EP2015/073794 EP2015073794W WO2016071086A1 WO 2016071086 A1 WO2016071086 A1 WO 2016071086A1 EP 2015073794 W EP2015073794 W EP 2015073794W WO 2016071086 A1 WO2016071086 A1 WO 2016071086A1
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Prior art keywords
layer
substrate
columnar structures
separation
epitaxial wafer
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PCT/EP2015/073794
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German (de)
English (en)
Inventor
Marco Englhard
Original Assignee
Osram Opto Semiconductors Gmbh
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Priority to DE112015005045.0T priority Critical patent/DE112015005045B4/de
Publication of WO2016071086A1 publication Critical patent/WO2016071086A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02647—Lateral overgrowth
    • H01L21/0265—Pendeoepitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Definitions

  • An epitaxial wafer, a device and methods for producing an epitaxial wafer and a component are specified.
  • the growth substrate can be separated from the semiconductor body by means of a laser lift-off method.
  • the laser lift-off method is suitable only for certain types of growth substrate.
  • alternative methods of separating the growth substrate it is often not possible to reuse the growth substrate.
  • a controlled gap method can be used for separating the growth substrate, in which the growth substrate is selectively separated from the semiconductor body by mechanical influences at various points.
  • the growth substrate is often damaged, so that a reuse of the growth substrate is no longer possible.
  • Recovering substrate is recyclable.
  • Other tasks are an epitaxial wafer with a recyclable
  • an epitaxial wafer is formed or provided.
  • the epitaxial wafer has a substrate and one on the substrate
  • the separation layer has to
  • Example a plurality of columnar structures such as a semiconductor material.
  • the substrate has one of the separating layer facing
  • Main surface which is particularly flat. This means in particular that the main surface has no curvatures, elevations or depressions within the scope of the manufacturing tolerances.
  • a columnar structure of the separation layer is understood to mean a structure that corresponds to the main surface of the
  • a lateral direction is understood to mean a direction
  • the vertical direction is directed perpendicular to the main surface and is thus perpendicular to the
  • a border of the cross section may take on any shape, for example, curved, approximately circular, elliptical or oval, or polygonal, approximately square or hexagonal. In particular, the remains
  • substantially constant means that the shape of the cross section does not change in particular. It can be a ratio of a minimum
  • Cross section to a maximum cross section of the columnar structure between 0.4 and 1 inclusive between about 0.6 and including 1 or 0.8 and including 1.
  • the aspect ratio is between
  • the columnar including 0.1 and 10, for example between 0.5 and 5 or between 1 and 5.
  • the columnar including 0.1 and 10, for example between 0.5 and 5 or between 1 and 5.
  • Structure has a lateral width, which is the maximum lateral extent of the cross section, wherein the vertical height is greater than the lateral width.
  • the columnar structures may have different sized cross sections.
  • the columnar structures may have different sized cross sections.
  • columnar structures may be arranged regularly or irregularly on the substrate.
  • the substrate is not completely covered by the columnar structures, but between the columnar structures are uncovered areas of the substrate.
  • the separating layer has in particular a semiconductor material or consists of this.
  • a semiconductor material for example, that is
  • Semiconductor material a III-V or II-VI semiconductor material.
  • Material of the separating layer chosen such that a
  • the columnar structures can be overgrown in a simple manner with a semiconductor layer or a layer sequence, wherein lattice defects within the on the epitaxy Wafer-applied semiconductor layer or
  • a layer sequence is formed on the epitaxial wafer.
  • the layer sequence contains in particular a plurality of
  • the layer sequence and the separation layer exclusively comprise semiconductor layers.
  • the layer sequence has an active layer which, for example, emits electromagnetic radiation during operation of the component.
  • the active layer can be designed so that it absorbs electromagnetic radiation during operation of the component and converts it into electrical signals or into electrical energy.
  • the layer sequence can also have several
  • the layer sequence is applied in layers on the epitaxial wafer by means of an epitaxy process.
  • the substrate is removed from the layer sequence at the separating layer, wherein the columnar structures are at least partially destroyed during the separation of the substrate.
  • the columnar structures are formed such that they for the separation of the substrate from the layer sequence alone by lateral mechanical
  • an epitaxial wafer is formed
  • the epitaxial wafer has a substrate and a release layer disposed on the substrate.
  • the separation layer has a plurality of columnar structures of a semiconductor material.
  • Epitaxy wafer becomes a layer sequence, about one
  • the substrate is removed from the layer sequence at the separating layer, whereby the columnar structures are at least partially destroyed during the removal of the substrate.
  • Substrate and the layer sequence can be separated non-destructively from each other.
  • a separation process only by means of external mechanical forces can be
  • the layer sequence is applied directly on the epitaxial wafer.
  • the layer sequence can be applied directly to the columnar structures of the separation layer.
  • the layer sequence after application has a
  • transition layer which completely covers the columnar structures in plan view of the substrate.
  • the transition layer and further layers of the layer sequence become one and the same Step by step, for example by means of a
  • the epitaxial wafer can be provided prefabricated in the manufacture of the device, wherein the prefabricated epitaxial wafer the
  • Transition layer which is formed for example by a lateral overgrowth over the columnar structures and as a contiguous
  • a material of the transition layer is chosen so that the remote crystallographic order is maintained within the epitaxial wafer with the substrate, the release layer, and the transition layer.
  • the separating layer in the case of the formation of the epitaxial wafer, is first applied flatly to the substrate. To form the columnar structures, the separating layer is subsequently structured. In this case, separating layer after structuring a substrate layer facing the bottom layer with it
  • the columnar structures may be structured on the substrate by a mask, for example
  • Such a mask may be prefabricated or be formed by marking the substrate, for example with an oxide layer, wherein the columnar
  • Structures can be grown on non-labeled sites of the substrate such as by an epitaxial growth process.
  • the layer sequence is fastened to a carrier composite prior to removal from the substrate. After removal of the substrate, the carrier composite and the layer sequence for singling the plurality of
  • Components each have a carrier from the carrier assembly and an associated layer sequence.
  • At least one trench is formed through the layer sequence, in particular before the layer sequence is attached to the carrier assembly.
  • the substrate is then removed from the layer sequence so that the trench is exposed in particular.
  • the carrier assembly can be singulated for singling the plurality of components along the trench.
  • the trench thus serves as a dividing line between the
  • Layer sequences of the components to be produced For example, you can saw along the trench. It is also possible that the at least one trench is formed such that it extends through the separating layer to the substrate. Also, a plurality of trenches can be formed. In particular, the trenches can be formed such that the layer sequences of the components to be produced are respectively surrounded by the trenches and thus on the
  • the separation of the carrier composite along the trenches can be designed in a simplified and reliable manner with high yield.
  • the substrate is mechanically separated from the layer sequence. This can be done in particular by applying a shearing force, for example by lateral mechanical force effects, whereby the columnar structures are at least partially or completely broken.
  • the substrate can thereby non-destructive of the layer sequence
  • Structures may be formed on the substrate such that a
  • Distribution density of the columnar structure varies depending on a distance from an edge of the substrate.
  • distances of adjacent columnar structures from a first edge of the substrate to a first opposite second edge or to a first
  • central region of the substrate at least in regions vary continuously.
  • central region of the substrate is understood to mean a region which is arranged, for example, about a geometrical center or about a center of mass of the substrate, wherein a surface of the central region is in particular at most 30%, at most 20% or at most 10 -6
  • Total surface of the main surface of the substrate makes up.
  • the columnar structures each have a cross section whose maximum lateral extent is smaller than one
  • an etching agent is fed into the at least one trench or into the plurality of trenches for the separation of the substrate so that the etchant partially etches away the columnar structures. Subsequently, the substrate can by lateral
  • Concentration of the etchant is chosen so that the
  • Layer sequence is completely separated, which can be dispensed with a separation process due to mechanical force effects.
  • the separating layer contains a sacrificial layer and a further layer, wherein the sacrificial layer is arranged between the substrate and the further layer.
  • the sacrificial layer comprises a material that is more susceptible to etching than a material of the further layer.
  • the sacrificial layer and the further layer of the separation layer are patterned or structured on the substrate, so that the columnar structures are each formed a first region of the sacrificial layer and a second region of the further layer. Due to the sacrificial material of the sacrificial layer, the columnar structures upon supply of a
  • Etched etchant predominantly or exclusively on the sacrificial layer. Alternatively or in addition to the separation of the
  • an epitaxial wafer it has a substrate, a release layer and in particular a transition layer.
  • Separating layer are, for example, semiconductor layers, wherein the separating layer between the substrate and the
  • the separation layer has a plurality of columnar structures approximately from one
  • Such an epitaxial wafer is particularly suitable for the method described above.
  • the features disclosed in connection with the method described above can therefore also be used for the epitaxial wafer or vice versa.
  • a remote crystallographic ordering within the entire epitaxial wafer is within manufacturing tolerances
  • the separation layer and the transition layer can have the same semiconductor material. By way of derogation, they may also have different materials, which are chosen in particular such that the
  • the latter has a carrier and a support arranged on the carrier
  • Layer sequence with an active layer is in particular free of a growth substrate.
  • the device is with an above
  • the device is free of the substrate of the epitaxial wafer.
  • the component has a carrier facing away, in particular exposed surface with partially removed
  • columnar structures such as of a semiconductor material. Under partially removed columnar structures are understood columnar structures having, for example, separation marks. The separation traces can emerge from an etching process or from a mechanical separation process.
  • the active layer emits an electromagnetic radiation, in particular in the ultraviolet, visible or in the infrared spectral range.
  • the active layer can be designed so that it absorbs electromagnetic radiation during operation of the component and converts the radiation into electrical energy or electrical signals.
  • the partially removed columnar structures can serve as coupling-out structures of the component.
  • the carrier facing away, in particular exposed surface of the device may be formed by a surface of the transition layer.
  • the surface of the transition layer can be structured. This structured surface serves as one, for example Radiation decoupling surface of the device.
  • the transition layer is overgrown directly onto the columnar structures, so that the structured surface of the
  • Transition layer replicates a distribution of the columnar structures.
  • Figure 1 is a schematic representation of a
  • FIGS. 2A to 2D are schematic representations of various components
  • FIGS. 3 and 4 are schematic representations of a method for producing a component
  • Figures 5 and 6 are schematic representations of a device, and Figures 7 and 8 further embodiments of a
  • FIG. 1 A first embodiment of an epitaxial wafer and its production is shown schematically in FIG.
  • the epitaxial wafer 10 has a substrate 1, a
  • Transition layer 30 and disposed between the substrate 1 and the transition layer 30 separating layer 2.
  • Separating layer 2 has a plurality of columnar
  • semiconductor layers in particular semiconductor layers. They may be formed of a same semiconductor material or different
  • the substrate 1 has a main surface 11 facing the columnar structures 20. A the columnar structures 20 facing away
  • Main surface 301 of the transition layer 30 is formed parallel to the main surface 11 of the substrate.
  • the main surface 301 of the transitional layer 30 is planar.
  • Transition layer 30 has a surface 302 facing columnar structure, which is structured.
  • the transition layer 30 is, in particular, laterally overgrown directly onto the columnar structures 20, so that the structured surface 302 of the transitional layer 30 is the same Positions of the columnar structures 20 reproduces.
  • the structured surface 302 is modeled on a distribution of the columnar structures 20.
  • the columnar structures 20 may cover at least 20% and at most 80% of a total area of the main surface 11 of the substrate 1. In particular, the columnar structures 20 cover between 25% and 70% inclusive, approximately between 30% and 60% inclusive of the total area of the major surface 11 of the substrate 1.
  • the columnar structures 20 cover between 40% and 70% of the total area of the main surface 11, whereby the transition layer 30 can be reliably applied to the columnar structures 20 and the substrate 1 in a subsequent step, for example by a mechanical separation process simplified from the transition layer 30th can be separated.
  • the substrate 1 is provided.
  • the substrate 1 may be
  • Sapphire substrate a silicon substrate, a germanium substrate or a gallium-containing substrate, such as a gallium nitride ⁇ or a gallium arsenide substrate.
  • the release layer 2 is applied, for example, surface.
  • the surface-applied release layer 2 can then by means of photo technology, such as by means of a photomask, and a
  • Etching process to the columnar structures 20 are structured.
  • Separating layer 2 are applied and then the uncovered areas of the lacquer layer of the release layer 2, for example by means of an etching process, such as a
  • Plasma etching process such as ICP etching (English: Inductively
  • Coupled plasma etching which causes the columnar structures 20 are generated.
  • Lack Mrs uncovered points can have any geometry, such as circular, elliptical or oval, or polygonal, approximately square or hexagonal.
  • the columnar structures 20 may be applied directly to the substrate 1.
  • the main surface 11 of the substrate can be partially covered by a mask, such as silicon oxide such as SiO 2, wherein the columnar structures 20 can be grown on uncovered areas of the main surface 11 in particular by an epitaxial process, such as the so-called molecular beam epitaxy.
  • the mask has openings whose cross-section may have any desired geometry, for example circular, elliptical or oval, or polygonal, approximately quadrangular or hexagonal.
  • Structures 20 are chosen such that the columnar
  • Transition layer 30 or by a formed on the transition layer 30 layer sequence by a mechanical
  • the columnar structures 20 are formed so that the substrate 1 on the separation layer 2 can be removed by exposing the columnar structures 20 at least
  • the columnar structures 20 may be lateral
  • the transition layer 30 forms in particular a coherent layer.
  • the transition layer 30 and the separation layer 2 may each comprise a semiconductor material. In particular, they may comprise a similar semiconductor material, such as gallium arsenide or gallium nitride.
  • the materials of the transition layer 30 and the separation layer 2 are designed such that, in particular, a crystallographic distance order is maintained within the entire epitaxial wafer 10. For example, a material of the substrate 1 is selected so that the
  • the substrate 1 is a
  • Gallium arsenide or a gallium nitride substrate Gallium arsenide or a gallium nitride substrate.
  • the columnar structures 20 are in FIG. 1
  • Structures 20 are substantially the same. They have in particular the same cross sections. Alternatively, the columnar structures 20 may be unevenly arranged. You can have different cross sections or so on the
  • Substrate 1 arranged that the distances between the
  • the columnar structures 20 are different.
  • the columnar structures 20 are formed on the substrate 2 so that a distribution density of the columnar structures 20 varies depending on a distance from an edge of the substrate.
  • Substrate 1 steadily to a central region of the substrate. The distances between the adjacent columnar
  • Structures 20 thus steadily increase from an edge of the substrate 1 toward the central region. Apart from that, it is also possible that the distances from one edge of the substrate 2 to the central area decrease steadily. In FIG. 2B, the distances between adjacent ones vary
  • columnar structures 20 continuously from a first edge of the substrate 1 to a second edge opposite the first edge. Apart from that, it is also possible that the distances vary only in certain regions.
  • the columnar structures 20 are arranged on the substrate 1 such that a plurality of groups of the columnar structures 20 are formed, wherein a lateral distance between the adjacent groups is greater than the distances between the columnar structures 20 within a group.
  • the separation layer 2 is formed so that the distances between the adjacent columnar
  • Structures 20 are larger than the vertical heights of the columnar structures 20.
  • FIG 3 is a step of a
  • Embodiment for producing a device 100 shown schematically.
  • the epitaxial wafer 10 this
  • Embodiment corresponds to the embodiment described in connection with Figure 1 for an epitaxial wafer.
  • the layer sequence 3 has a first one
  • the layer sequence 3 can be applied to it directly after the application of the transition layer 30, for example by means of an epitaxy process. In other words, the layer sequence 3 and the transition layer 30 in a common process step, such as in a
  • transition layer 30 and the first semiconductor layer 31 may be a same semiconductor material
  • Process step can be formed.
  • the epitaxial wafer 10 with the transition layer 30 is produced in a separate process, the epitaxial wafer 10 is provided for the production of the device 10 and the layer sequence 3 in one of the production of the epitaxial wafer 10th
  • Epitaxial wafers 10 is applied.
  • the layer sequence 3 is applied to a carrier 9 or to a carrier composite 90 by means of a bonding layer 4, such as an adhesive layer or a solder layer, attached. It is also possible that the connection layer 4 is designed to be radiation-reflecting.
  • the carrier 9 or the carrier assembly 90 may include germanium or silicon or germanium or
  • the layer sequence 3 is bonded to the carrier assembly 90.
  • the carrier assembly 90 the layer sequence 3 is bonded to the carrier assembly 90.
  • Connecting layer 4 is formed as a bond connection.
  • FIG. 4 shows a further method step of a
  • the substrate is from the
  • Layer sequence 3 at the separation layer 2 separated by the columnar structures 20 at least partially or
  • a shearing force is applied, such as by lateral
  • columnar structures 20 are broken.
  • the substrate 1 can be separated from the layer sequence 3 and reused without destruction.
  • the carrier composite 90 with the layer sequence 3 arranged thereon is produced separated after removal of the substrate 1, whereby a plurality of individual components 100 is formed, each having a carrier 9 from the carrier assembly 90 and an associated layer sequence.
  • a component is shown schematically, for example, in FIG.
  • the device 100 in FIG. 5 is free of one
  • the device 100 is free of the substrate 1 of the epitaxial wafer 10.
  • the active layer 33 of the layer sequence 3 may be formed so that it in the operation of the device 100 is an electromagnetic
  • the active layer 33 absorbs an electromagnetic radiation during operation of the device 100 and converts it into electrical energy or electrical signals.
  • the component 100 has a support 9 facing away from, in particular exposed surface with partially removed columnar structures 20.
  • Under partially removed columnar structures 20 are understood in particular columnar structures having on their side facing away from the layer sequence 3 side separation marks.
  • Structures 20 a radiation passage area 101 about a radiation exit surface or a radiation entrance surface of the device 100, wherein the columnar structures 20 as Strahlungsauskoppel- or as
  • columnar structures 20 act in particular as radiation coupling-out structures or as scattering structures which in particular emit the radiations emerging from the component sprinkle evenly in different directions.
  • the radiation passage area 101 is columnar
  • Component 100 shown schematically The component 100 of this embodiment substantially corresponds to that described in connection with FIG. 1
  • the component 100 has a mirror layer 5, which is arranged between the carrier 9 and the layer sequence 3.
  • the radiation passage area 101 is a surface of the transitional layer 30, wherein the surface of the transitional layer 30 is structured, but free of the columnar structures 20. In other words, the columnar structures 20 are completely removed compared to the embodiment described in FIG.
  • FIG. 7 shows an exemplary embodiment of a method for producing a plurality of components in a schematic sectional view. This embodiment substantially corresponds to the embodiment described in FIG.
  • the substrate 1 is removed from the layer sequence 3 in particular so that the trench 23 is exposed. It is also possible that a plurality of trenches 23 be formed. For separating the plurality of
  • FIG. 8 is another embodiment of a
  • Separation layer 2 first, a sacrificial layer 21, about
  • AlAs Aluminum arsenide
  • the separating layer 2 has a further layer 22, which is applied to the sacrificial layer 21, for example by means of an epitaxial process.
  • the further layer 22 of the separation layer 2 comprises a material which is more etch-resistant than a material of the sacrificial layer 21.
  • the separating layer 2 is arranged with the between the further layer 22 and the substrate 1
  • Sacrificial layer 21 is then used to form a
  • a plurality of columnar structures 20 structured approximately by means of an etching process.
  • the columnar structures 20 thus each have a portion of the sacrificial layer 21 and a further portion of the further layer 22 of the
  • columnar structures 20 directly structured, for example by a mask made of silicon oxide, are applied to the substrate 1.
  • Substrate 1 by a mechanical separation process, such as by lateral mechanical force on the substrate or on the carrier network 90 or on the
  • Layer sequence 3 are separated from the layer sequence 3. Due to the presence of the trench 23, the
  • Shearing force can be reduced because a part of thefitscherenden material of the release layer 2 has already been removed.
  • Substrate 1 applied an etching process.
  • An etchant for example a hydrofluoric acid such as hydrofluoric acid (HF), can be supplied into the trench 23 or into the plurality of trenches 23. Due to the capillary effect, the etchant may laterally on the substrate 1 and vertically
  • the sacrificial layer 21 may be etched away partially or completely. In a complete path etching of the sacrificial layer 21, the substrate 1 is separated from the layer sequence 3 solely on the basis of the etching process. By forming the columnar structures 20 and / or the trenches 23, the amount of material to be etched of the sacrificial layer 21 is significantly reduced. in the
  • the amount of material to be etched may be up to 50% or more
  • columnar structures 20 are only partially etched and for
  • Separation of the substrate is additionally applied a shear force to the substrate 1 and / or to the carrier composite 1 or to the layer sequence 3.
  • the shear force can be further reduced.
  • the separating layer 2 has columnar structures 20 which are partially made of a porous Material, such as porous oxidized Aluminiumarsenid formed.
  • a porous Material such as porous oxidized Aluminiumarsenid formed.
  • the sacrificial layer 21 described in FIG. 8 it is also possible for the sacrificial layer 21 described in FIG. 8 to be approximately a porous coherent layer, for example oxidized
  • Growth substrate 1 can be easily separated from the semiconductor layer sequence 3 by applying a shearing force alone.
  • the separation layer 2 can thus in addition to the
  • columnar structures 20 have a continuous porous sacrificial layer 21.
  • the separation layer 2 can be partially or completely oxidized, whereby the separation layer 2 is formed partially or completely porous. Due to the
  • Oxidation of the release layer 2 will increase the adhesion of the
  • Separation layer 2 reduced to surrounding crystal layers. A faster etching or a simplified approximately purely mechanical separation of the separation layer 2 of the
  • Layer sequence 3 or of the substrate 1 can be achieved thereby.
  • Layer sequence 3 are greatly reduced by the substrate 1. Due to the porosity and the reduced adhesive force too
  • the sacrificial layer 21 may be contiguous and not necessarily in columnar form.
  • the separation layer 2 can be laterally oxidized into greater depths, whereby components with larger
  • Structures in the release layer can be a special cost-effective method for producing a plurality of components are specified, in which the growth substrate is simplified and reliably produced by the
  • Components is separated nondestructively and thus can be reused.
  • Such a separation method is also applicable to any growth substrate, so that, for example, a sapphire substrate can be reliably removed from the layer sequence without the use of the laser lift-off process or a GaAs substrate without the use of etchants nondestructive.
  • German patent application DE 10 2014 116 276.5 is claimed, the disclosure content of which is hereby incorporated by reference.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un composant et un procédé destiné à fabriquer un composant, le procédé comportant les étapes suivantes : - formation ou préparation d'une tranche d'épitaxie qui comporte un substrat et un séparateur disposé sur le substrat, le séparateur comprenant une pluralité de structures en formes de piles et composées d'un matériau semi-conducteur, - la formation d'une succession de couches avec une couche active sur la tranche d'épitaxie ; et - l'enlèvement du substrat de la succession de couches sur le séparateur en détruisant au moins partiellement les structures en forme de piles. L'invention concerne en outre une tranche d'épitaxie qui est appropriée en particulier pour la fabrication du composant.
PCT/EP2015/073794 2014-11-07 2015-10-14 Tranche d'épitaxie, composant et procédé de fabrication d'une tranche d'épitaxie et d'un composant WO2016071086A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE112015005045.0T DE112015005045B4 (de) 2014-11-07 2015-10-14 Epitaxie-Wafer, Bauelement und Verfahren zur Herstellung eines Epitaxie-Wafers und eines Bauelements

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102014116276.5A DE102014116276A1 (de) 2014-11-07 2014-11-07 Epitaxie-Wafer, Bauelement und Verfahren zur Herstellung eines Epitaxie-Wafers und eines Bauelements
DE102014116276.5 2014-11-07

Publications (1)

Publication Number Publication Date
WO2016071086A1 true WO2016071086A1 (fr) 2016-05-12

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PCT/EP2015/073794 WO2016071086A1 (fr) 2014-11-07 2015-10-14 Tranche d'épitaxie, composant et procédé de fabrication d'une tranche d'épitaxie et d'un composant

Country Status (2)

Country Link
DE (2) DE102014116276A1 (fr)
WO (1) WO2016071086A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111527590A (zh) * 2017-12-07 2020-08-11 索泰克公司 通过使用可分离结构来转移层的方法

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US20090079034A1 (en) * 2007-09-26 2009-03-26 Wang Nang Wang Non-polar iii-v nitride semiconductor and growth method
EP2136390A2 (fr) * 2008-06-19 2009-12-23 Nanogan Limited Production de matériau semi-conducteur et dispositifs utilisant des modèles gravés à angle oblique
GB2502818A (en) * 2012-06-08 2013-12-11 Nanogan Ltd Epitaxial growth of semiconductor material such as Gallium Nitride on oblique angled nano or micro-structures
US20140080287A1 (en) * 2011-03-31 2014-03-20 Osram Opto Semiconductors Gmbh Method for singulating a component composite assembly
EP2743966A1 (fr) * 2012-12-14 2014-06-18 Seoul Viosys Co., Ltd. Plaquette de couche épitaxiale possédant un vide permettant de séparer un substrat de croissance à partir de celui-ci et dispositif semi-conducteur fabriqué à l'aide de celui-ci

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TWI240434B (en) * 2003-06-24 2005-09-21 Osram Opto Semiconductors Gmbh Method to produce semiconductor-chips
US8852391B2 (en) * 2010-06-21 2014-10-07 Brewer Science Inc. Method and apparatus for removing a reversibly mounted device wafer from a carrier substrate
US9406551B2 (en) 2012-09-27 2016-08-02 Infineon Technologies Austria Ag Method for manufacturing a semiconductor substrate, and method for manufacturing semiconductor devices integrated in a semiconductor substrate
DE102012109594A1 (de) * 2012-10-09 2014-04-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090079034A1 (en) * 2007-09-26 2009-03-26 Wang Nang Wang Non-polar iii-v nitride semiconductor and growth method
EP2136390A2 (fr) * 2008-06-19 2009-12-23 Nanogan Limited Production de matériau semi-conducteur et dispositifs utilisant des modèles gravés à angle oblique
US20140080287A1 (en) * 2011-03-31 2014-03-20 Osram Opto Semiconductors Gmbh Method for singulating a component composite assembly
GB2502818A (en) * 2012-06-08 2013-12-11 Nanogan Ltd Epitaxial growth of semiconductor material such as Gallium Nitride on oblique angled nano or micro-structures
EP2743966A1 (fr) * 2012-12-14 2014-06-18 Seoul Viosys Co., Ltd. Plaquette de couche épitaxiale possédant un vide permettant de séparer un substrat de croissance à partir de celui-ci et dispositif semi-conducteur fabriqué à l'aide de celui-ci

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111527590A (zh) * 2017-12-07 2020-08-11 索泰克公司 通过使用可分离结构来转移层的方法
CN111527590B (zh) * 2017-12-07 2023-09-29 索泰克公司 通过使用可分离结构来转移层的方法

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DE102014116276A1 (de) 2016-05-12
DE112015005045A5 (de) 2017-08-31
DE112015005045B4 (de) 2021-10-07

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