WO2016066003A1 - Détecteur mems de méthane fondé sur un dispositif de chauffage de silicium, son procédé de fabrication et ses applications - Google Patents

Détecteur mems de méthane fondé sur un dispositif de chauffage de silicium, son procédé de fabrication et ses applications Download PDF

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WO2016066003A1
WO2016066003A1 PCT/CN2015/091133 CN2015091133W WO2016066003A1 WO 2016066003 A1 WO2016066003 A1 WO 2016066003A1 CN 2015091133 W CN2015091133 W CN 2015091133W WO 2016066003 A1 WO2016066003 A1 WO 2016066003A1
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silicon
type silicon
heating element
etching
heater
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PCT/CN2015/091133
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English (en)
Chinese (zh)
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马洪宇
丁恩杰
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中国矿业大学
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/18—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by changes in the thermal conductivity of a surrounding material to be tested

Definitions

  • the invention relates to a sensor and a preparation method and application thereof, in particular to a silicon heater-based MEMS methane sensor used for gas prevention and control in an industrial and mining enterprise, and a preparation method and application thereof.
  • the existing catalytic combustion type methane sensor uses a coil wound with a noble metal such as platinum wire as a heating element, which is difficult to mass-produce, has poor consistency, and has a large power consumption. Therefore, the application requirements of the Internet of Things for methane sensors cannot be well met.
  • the price of infrared methane sensor is high, and the sensing element is seriously affected by dust and water vapor, which can not meet the application requirements of low-power high-performance methane sensor.
  • Existing thermal conductivity methane sensors are used in coal mines to detect high concentrations of methane-based methane gas. For low concentrations (0 to 4%) of methane-based methane gas, the sensitivity is too low to be used for detection. Call the police.
  • the present invention provides a novel micromethane sensor that can detect low concentrations (0 to 5%) of methane without using a catalyst.
  • the methane sensor is processed by using a common low-cost silicon wafer as a substrate, and can be CMOS-compatible. MEMS process mass production, low cost, and silicon heater-free MEMS methane sensor without sensor and its preparation method and application.
  • a silicon heater-based MEMS methane sensor of the present invention uses P-type silicon as a substrate to form N-type silicon on the P-type silicon substrate; and the P-type silicon substrate Forming a silicon heating element on the N-type silicon;
  • the silicon heating element comprises two fixed ends, a silicon heater, two silicon cantilevers;
  • the single silicon cantilever is at least 300 um in length; one end of the single silicon cantilever is silicon The heater is connected and the other end is connected to a fixed end to provide an electrical connection for the silicon heater;
  • the two silicon cantilevers are parallel and Arranging, integrally forming a U-shaped cantilever structure with the silicon heater to suspend the silicon heater in the air;
  • the silicon heater of the silicon heating element and the outer surface of the silicon cantilever are provided with a passivation protective layer;
  • the fixed end includes N-type silicon, a silicon oxide layer on the N-type silicon, and a metal serving as an electrical extraction pad Pad, and the electrical extraction pad metal pad
  • the contact portion of the pad metal pad and the underlying N-type silicon layer has no silicon oxide layer.
  • An isolation trench with N-type silicon removed is disposed around the fixed end of the silicon heating element, the isolation trench such that the silicon heating element and its fixed end N-type silicon and the remaining N on the P-type silicon substrate
  • the type of silicon is in a high resistance state, in particular, there is no circuit path between the two fixed ends of the silicon heating element provided on the P-type silicon substrate except for the electrical path formed by the silicon cantilever and the silicon heater.
  • a silicon heater-based MEMS methane sensor application method using two silicon heater-based MEMS methane sensors, one of which is based on a silicon heater-based MEMS methane sensor, the silicon heating element is in contact with ambient air, and the other is based on silicon heating.
  • the silicon heating element of the MEMS methane sensor is hermetically sealed, and the sealed air inside the package is isolated from the ambient air.
  • the silicon heating elements of the two silicon heater-based MEMS methane sensors constitute the Wheatstone bridge detection bridge arm; Applying a voltage or current to the two fixed ends of the silicon heating element of the silicon heater-based MEMS methane sensor, so that the operating point of the silicon heating element is located in the operating point region to the left of the turning point in the current-voltage characteristic curve, so that the silicon heating element
  • the silicon heater generates heat, characterized in that the heating temperature is above 500 degrees Celsius; the turning point is the maximum point of resistance that occurs when the resistance increases with current or voltage, and when the current or voltage continues to increase, the resistance does not continue to increase.
  • the steps of the preparation method (1) are as follows:
  • N-type silicon is prepared by doping or diffusion on the front side of the crystal orientation (100) P-type silicon substrate, and the thickness of the N-type silicon is 3 to 30 um;
  • the second step thermal oxidation to form a silicon oxide layer, thickness of 0.5 to 1 um;
  • a photoresist is prepared on the front side of the P-type silicon substrate, and after lithography, a silicon heating element, an isolation trench disposed around the fixed end of the silicon heating element, and a pattern of the front etching window are formed, and then RIE (Reactive) is adopted.
  • Ion Etching, reactive ion etching) dry etching of the exposed silicon oxide layer and the underlying silicon, deep etching The degree is greater than the sum of the thicknesses of the N-type silicon and the silicon oxide layer, and the photoresist is removed;
  • the silicon oxide layer formed in the second step is photolithographically formed on the front side of the P-type silicon substrate to form a metal contact hole pattern;
  • a metal layer is formed by sputtering or depositing or evaporating on the front side of the P-type silicon substrate.
  • the material of the metal layer may be gold or aluminum, and annealed, and the exposed N-type on the metal layer and the P-type silicon substrate. Silicon forms an ohmic contact;
  • the metal layer is photolithographically etched to form an electrical extraction pad metal pad, a metal connection line and a total metal connection end, and the electrical extraction pad metal pad and metal of each silicon heating element are formed.
  • the connecting wires are connected by a metal layer, and the metal connecting wires are connected to the total metal connecting end through a metal layer, and the total metal connecting end is disposed at an edge of the P-type silicon substrate, and when a potential is applied at the total metal connecting end, the whole silicon is
  • the N-type silicon of all the silicon heating elements on the wafer form a good electrical connection and have the same potential as the total connection end, the metal connection line being disposed in the scribe groove;
  • a photoresist is prepared on the front surface of the P-type silicon substrate, and a front etching window pattern is formed by photolithography, and the P-type silicon exposed by the front etching window pattern formed by dry etching by the RIE method is engraved.
  • the etching depth is greater than 20um, forming an etching window of the front wet silicon etching to remove the photoresist; the projection of the silicon heater of the silicon heating element is located at the center of the etching window;
  • an etch protection layer is prepared on the front side of the P-type silicon substrate, and a photoresist resistant to tetramethylammonium hydroxide solution or potassium hydroxide solution is used as an etch protection layer; the etch protection layer is patterned After exposing the total metal connection end and the front side wet silicon etching etching window prepared in the seventh step;
  • the prepared silicon wafer is placed in a tetramethylammonium hydroxide solution or a potassium hydroxide solution to perform a front side wet etching of the P-type silicon, that is, the silicon etching starts from the front side of the P-type silicon substrate.
  • a positive voltage to the N-type silicon on the P-type silicon substrate through the total metal connection end during etching, the positive voltage being higher than the passivation potential of the PN junction from the stop etching, so that the P-type silicon substrate and the N-type
  • the PN junction formed by the silicon is in a reverse bias state; the N-type silicon of the silicon heating element is not etched by the PN junction self-stop etching, and the depth of the front surface of the P-type silicon is at least 100 um to be completely released.
  • a silicon heating element preferably penetrating the silicon wafer to form a through hole; a projection of the silicon heater of the silicon heating element is located at a center of the through hole, and the outer dimension is much smaller than the size of the through hole;
  • the etching protection layer prepared in the eighth step is removed, and after drying, the silicon oxide on the surface of the silicon heating element generated in the second step is removed by using a hydrofluoric acid solution or a hydrofluoric acid gas mist;
  • the silicon exposed on the outer surface of the silicon oxide heating element forms a thin layer of silicon oxide having a uniform thickness, the thickness of which is from ten to 100 nm, as a passivation protective layer;
  • N-type silicon is prepared by doping or diffusion on the front side of the (100) crystal orientation P-type silicon substrate, and the thickness of the N-type silicon is 3 to 30 um;
  • the second step thermal oxidation to form a silicon oxide layer, thickness of 0.5 to 1 um;
  • a photoresist is prepared on the silicon oxide layer on the front surface of the P-type silicon substrate, and after lithography, a silicon heating element, an isolation trench disposed around the fixed end of the silicon heating element, and a front etching window are formed, and Drying the exposed silicon oxide layer and the underlying silicon by RIE, the etching depth is greater than the sum of the thickness of the N-type silicon and the silicon oxide layer formed in the second step, and removing the photoresist;
  • the silicon oxide layer formed in the second step is photolithographically formed on the front side of the P-type silicon substrate to form a metal contact hole;
  • a metal layer is formed by sputtering or depositing or evaporating on the front side of the P-type silicon substrate.
  • the material of the metal layer is aluminum and annealed, and the metal layer forms an ohmic with the exposed N-type silicon on the P-type silicon substrate. contact;
  • a metal layer is formed by sputtering or depositing or evaporating on the front side of the P-type silicon substrate, the material of the metal layer is aluminum, and the thickness is 2 to 5 um;
  • a photoresist is prepared on the metal layer, and a pattern of the front etching window is formed by photolithography, and the metal layer corresponding to the pattern of the front etching window is removed, and then the exposed P is etched by RIE dry etching.
  • Type silicon etching depth 30um, forming a front wet etching window; the projection of the silicon heater of the silicon heating element is located at the center of the etching window;
  • the prepared silicon wafer is placed in a tetramethylammonium hydroxide solution, and a wet etching is started from the front surface of the P-type silicon substrate by stop etching using a PN junction, and is prepared by the seventh step during etching.
  • the metal on the edge of the P-type silicon substrate applies a positive voltage to the N-type silicon on the P-type silicon substrate, the positive voltage being higher than the passivation potential of the PN junction from the stop etching, so that the P-type silicon substrate and The PN junction formed by the N-type silicon is in a reverse bias state; the N-type silicon of the silicon heating element is not etched under the action of stopping the etching of the PN junction, and the front side etching depth of the P-type silicon is at least 100 ⁇ m to completely release the silicon.
  • the heating element preferably etches through the silicon wafer to form a through hole; the projection of the silicon heater of the silicon heating element is located at the center of the through hole, and the outer dimension is much smaller than the size of the through hole;
  • a photoresist is prepared on the fixed end of the silicon heating element, dried, and etched to remove metal other than the electrical lead pad metal pad on the fixed end of the silicon heating element;
  • the silicon oxide on the surface of the silicon heating element generated in the second step is removed by using a hydrofluoric acid solution or a hydrofluoric acid gas mist to remove the photoresist of the ninth step;
  • the silicon exposed on the outer surface of the silicon oxide heating element forms a thin layer of silicon oxide having a uniform thickness of more than ten nm to 100 nm as a passivation protective layer;
  • the silicon heater-based MEMS methane sensor of the present invention uses a low-cost ordinary P-type silicon wafer as a substrate instead of a high-priced SOI silicon wafer, which greatly reduces the cost of raw materials; and has a simple processing process and can be combined with CMOS.
  • the process is compatible and easy to mass-produce; the silicon etching process adopts a wet silicon etching process, and the release of the device of the invention can be completed by using a low-cost chemical solution, and the expensive dry etching is not required compared with the dry etching. Corrosion equipment and processing costs, so the processing cost is lower; therefore, the methane sensor of the present invention has the advantage of low processing cost;
  • the silicon heater of the methane sensor of the invention is suspended in the air away from the silicon substrate, and the distance is more than 300 um, which greatly reduces the heat lost through the silicon wafer, so that the silicon heater can be heated at a lower power.
  • Up to 500 ° C high temperature has the advantage of low power consumption, the power consumption of a single silicon heating element is about 80 ⁇ 90mW;
  • the methane sensor of the present invention does not use a catalyst and a catalytic carrier, and therefore, the performance of the sensor is not affected by the catalyst, and there is no problem of sensitivity reduction, poisoning, activation, and unpredictable zero drift caused by a decrease in catalyst activity; At the same time, the methane sensor of the present invention does not require oxygen to participate in the detection of methane, and thus is not affected by oxygen in the air;
  • the MEMS methane sensor of the present invention uses a silicon heating element as a heating element and a methane detecting element, and can realize high sensitivity detection of low concentration methane gas (0 to 4%) without using a catalyst; detection of methane by using a silicon heating element
  • the structure of the silicon heater is a parallel form of a plurality of silicon heating strips, and has a high temperature surface area in contact with air, which contributes to the improvement of sensitivity; the sensitivity of the MEMS methane sensor of the present invention can reach 10 mV/CH 4 %, It can directly push the instrument and meet the requirements of national standards.
  • the methane sensor of the present invention can be mass-produced in a CMOS process, and has good consistency, so that it can be batch-calibrated, thereby further improving sensor performance and reducing the cost of calibration of the sensor;
  • the methane sensor of the invention has small size, low power consumption, high sensitivity, fast response speed, response speed of about 40 ms, good linearity of output signal and long service life.
  • the material of the silicon heating element of the present invention is monocrystalline silicon, which is stable at high temperatures, which makes the methane sensor of the present invention have good stability and long life under high temperature operation. This is because monocrystalline silicon is not There are disadvantages such as rapid heating and migration of metal heating materials such as platinum and tungsten at a high temperature of 500 degrees Celsius or higher, and there is no disadvantage that the grain boundary resistance of the polysilicon resistor is easily changed at a high temperature and cannot be controlled. At the same time, the passivation layer provided on the outer surface of the silicon heating element of the present invention also reduces the influence of the external environment on the above components, thereby further improving the stability of the performance of the methane sensor of the present invention.
  • the methane sensor of the present invention can be mass-produced in a CMOS process, and has good consistency, so that it can be batch-calibrated, thereby further improving sensor performance and reducing the cost of sensor calibration.
  • FIG. 1 is a top plan view of a silicon heater based MEMS methane sensor of the present invention.
  • Figure 2 is a cross-sectional view taken along line A-A of Figure 1 of the present invention.
  • Fig. 3 is a schematic view showing the structure of a silicon heater of the present invention.
  • FIG. 4 is a schematic view showing a metal connecting wire and a partial dicing groove of a silicon heater-based MEMS methane sensor on a silicon wafer according to the present invention.
  • FIG. 5 is a current-resistance characteristic curve of a silicon heating element of a silicon heater-based MEMS methane sensor of the present invention.
  • a P-type silicon substrate 01 is formed, and the P-type silicon substrate 01 is doped or diffused to form an N-type silicon 02;
  • a silicon heating element 101 is fabricated by N-type silicon 02 on a silicon substrate 01;
  • the silicon heating element 101 includes two fixed ends 102, a silicon heater 1011, and two silicon cantilevers 1012;
  • the single silicon cantilever 1012 is at least at least 300 um; one end of the single silicon cantilever 1012 is connected to the silicon heater 1011, and the other end is connected to a fixed end 102 to provide electrical connection for the silicon heater 1011;
  • the two silicon cantilevers 1012 are arranged side by side in parallel with silicon heating
  • the device 1011 integrally forms a U-shaped cantilever structure, and suspends the silicon heater 1011 in the air;
  • the silicon heater 1011 of the silicon heating element 101 and the outer surface of the silicon cantilever 1012 are provided with a passivation protective layer 22;
  • On the P-type silicon substrate 01 including
  • An isolation trench 103 from which N-type silicon is removed is disposed around the silicon heating element 101 and its fixed end 102, and the isolation trench 103 makes the silicon heating element 101 and its fixed end 102 N-type silicon and P
  • the remaining N-type silicon on the type silicon substrate 01 is in a high resistance state, in particular, between the two fixed ends 102 of the silicon heating element 101 disposed on the P-type silicon substrate 01, except for being heated by the silicon cantilever 1012 and silicon. There is no other circuit path beyond the electrical path formed by the device 1011.
  • FIG 3 is a schematic view of a structure of a silicon heater in which a plurality of parallel silicon heaters of the silicon heating strip 1013 can increase the high temperature surface area in contact with methane in the air, and the silicon heater can also be annular.
  • FIG. 4 is a schematic view of a metal connecting line and a partial dicing groove on a silicon wafer of a silicon heater-based MEMS methane sensor of the present invention. After dicing along the illustrated partial dicing grooves 40, not only can the silicon heater-based MEMS methane sensor be separated from the silicon wafer, but also the two electrical extraction pad metal pads 21 of each silicon heating element 101 are not There is a metal connection.
  • the metal connecting wires 31 are not shown in Figs. 1, 2, and 3.
  • a silicon heater-based MEMS methane sensor for methane detection uses two silicon heater-based MEMS methane sensors, one of which is based on a silicon heater-based MEMS methane sensor.
  • the silicon heating element 101 is in contact with ambient air.
  • a silicon heater-based MEMS methane sensor silicon heating element 101 is hermetically sealed, and the sealed air inside the package is isolated from ambient air.
  • the silicon heating elements 101 of the two silicon heater-based MEMS methane sensors constitute Whist.
  • the power bridge detects the bridge arm; a voltage or current is applied to the two fixed ends 102 of the silicon heating element 101 of the silicon heater based MEMS methane sensor, such that the operating point of the silicon heating element 101 is at the current-resistance as shown in FIG.
  • the working point region on the left side of the turning point in the characteristic curve causes the silicon heater 1011 of the silicon heating element 101 to generate heat, which is characterized in that the heating temperature is above 500 degrees Celsius; the turning point is the maximum resistance that occurs when the resistance increases with current or voltage. Point, when the current or voltage continues to increase, the resistance no longer continues to increase but decreases; when a single silicon heating element is operating It consumes about 80-90 mW; when methane gas is present, the temperature of the silicon heater 1011 in contact with the ambient air is lowered, and the resistance of the silicon heating element 101 is changed, and the MEMS methane sensor based on the silicon heater is formed.
  • the Stone Bridge realizes the detection of low concentration methane; the detection sensitivity of low concentration methane gas (0 ⁇ 4%) can reach 10mV/CH 4 %, and the response time can reach 40ms.
  • the steps of the preparation method (1) are as follows:
  • N-type silicon 02 is prepared by doping or diffusion on the front side of the (100) crystal orientation P-type silicon substrate 01, and the thickness of the N-type silicon 02 is 3 to 30 um;
  • the second step thermal oxidation to form a silicon oxide layer, thickness of 0.5 to 1 um;
  • a photoresist is prepared on the front surface of the P-type silicon substrate 01, and after lithography, a pattern of the silicon heating element 101, the isolation trench 103 disposed around the fixed end of the silicon heating element, and the front etching window 104 is formed. Etching the exposed silicon oxide layer and the underlying silicon by RIE, the etching depth is greater than the sum of the thickness of the N-type silicon 02 and the silicon oxide layer formed in the second step, and removing the photoresist;
  • the silicon oxide layer formed in the second step is photolithographically formed on the front side of the P-type silicon substrate 01 to form a metal contact hole;
  • a metal layer is formed by sputtering or deposition or evaporation on the front surface of the P-type silicon substrate 01.
  • the material of the metal layer may be gold or aluminum and annealed, and the exposed metal layer and the P-type silicon substrate 01 are exposed.
  • N-type silicon 02 forms an ohmic contact;
  • the metal layer is photolithographically etched to form an electrical extraction pad metal pad 21, a metal connection line 31 and a total metal connection end 32, and the electrical extraction pads of each of the silicon heating elements 101 are formed.
  • the metal pad 21 is connected to the metal connection line 31 through a metal layer, and the metal connection line 31 is connected to the total metal connection end 32 through a metal layer; the total metal connection end 32 is provided at the edge of the P-type silicon substrate, when When the metal connection end 32 applies an electric potential, the N-type silicon of all the silicon heating elements 101 on the entire silicon wafer forms a good electrical connection and has the same potential as the total metal connection end 32, and the metal connection line 31 is disposed in the dicing groove. 40;
  • a photoresist is prepared on the front surface of the P-type silicon substrate 01, and a pattern of the front etching window 104 is formed by photolithography, and the P-type exposed by the pattern of the front etching window 104 formed by dry etching by the RIE method is performed.
  • Silicon, the etching depth is greater than 20 um, forming an etch window 104 of the front wet silicon etch, removing the photoresist; the projection of the silicon heater 1011 of the silicon heating element 101 is located at the center of the etch window 104;
  • an etching protection layer is prepared on the front surface of the P-type silicon substrate 01, and a photoresist resistant to tetramethylammonium hydroxide solution or potassium hydroxide solution is used as an etching protection layer; the etching protection is patterned After the layer, the total metal connection end 32 and the front side wet silicon etched etching window 104 prepared in the seventh step are exposed;
  • the prepared silicon wafer is placed in a tetramethylammonium hydroxide solution or a potassium hydroxide solution to perform a front side wet etching of the P-type silicon, that is, the silicon etching is performed from the front side of the P-type silicon substrate 01.
  • the etching window 104 starts, and a positive voltage is applied to the N-type silicon 02 on the P-type silicon substrate 01 through the total metal connection end 32 during etching, which is higher than the passivation potential of the PN junction from the stop etching, Forming a P-type silicon substrate 01 and an N-type silicon 02
  • the PN junction is in a reverse bias state.
  • the N-type silicon 02 of the silicon heating element 101 is not etched, and the depth of the front surface of the P-type silicon is etched by at least 100 um to completely release the silicon heating element 101.
  • the through hole 105 is formed through the silicon wafer; the projection of the silicon heater 1011 of the silicon heating element 101 is located at the center of the through hole 105, and the outer dimension is much smaller than the size of the through hole 105;
  • the etching protection layer prepared in the eighth step is removed, and after drying, the silicon oxide on the surface of the silicon heating element 101 generated in the second step is removed by using a hydrofluoric acid solution or a hydrofluoric acid gas mist;
  • the eleventh step the silicon exposed to the outer surface of the silicon oxide heating element 101, forming a thin layer of silicon oxide having a thickness of ten to 100 nm, as a passivation protective layer 22;
  • the steps of the second preparation method are as follows:
  • N-type silicon 02 is prepared by doping or diffusion on the front side of the (100) crystal orientation P-type silicon substrate 01, and the thickness of the N-type silicon 02 is 3 to 30 um;
  • the second step thermal oxidation to form a silicon oxide layer, thickness of 0.5 to 1 um;
  • a photoresist is prepared on the silicon oxide layer on the front surface of the P-type silicon substrate 01, and a silicon heating element 101, an isolation trench 103 disposed around the fixed end of the silicon heating element, and a front etching window 104 are formed after photolithography. a pattern, and RIE etching the exposed silicon oxide layer and the underlying silicon, the etching depth is greater than the sum of the thickness of the N-type silicon 02 and the silicon oxide layer formed in the second step, and removing the photoresist;
  • the silicon oxide layer formed in the second step is photolithographically formed on the front side of the P-type silicon substrate 01 to form a metal contact hole;
  • a metal layer is formed by sputtering or deposition or evaporation on the front surface of the P-type silicon substrate 01.
  • the material of the metal layer is aluminum, and the metal layer and the exposed N-type silicon on the P-type silicon substrate 01 are exposed.
  • 02 forming an ohmic contact;
  • a metal layer is formed by sputtering or depositing or evaporating on the front surface of the P-type silicon substrate 01, the material of the metal layer is aluminum, and the thickness is 2 to 5 um;
  • a photoresist is prepared on the metal layer, and a pattern of the front etching window 104 is formed by photolithography, and the metal layer corresponding to the pattern of the front etching window 104 is removed, and then exposed by RIE dry etching.
  • the prepared silicon wafer is placed in a tetramethylammonium hydroxide solution, and the wet etching is started from the etching window 104 on the front surface of the P-type silicon substrate 01 by the PN junction self-stop etching.
  • the metal on the edge of the P-type silicon substrate 01 prepared by the seventh step applies a positive voltage to the N-type silicon 02 on the P-type silicon substrate 01, which is higher than the passivation potential of the PN junction from the stop etching,
  • the PN junction formed by the P-type silicon substrate 01 and the N-type silicon 02 is in a reverse bias state;
  • the N-type silicon 02 of the silicon heating element 101 is not etched by the PN junction self-stop etching, and the P-type is
  • the front surface of the silicon is etched to a depth of at least 100 um to completely release the silicon heating element 101, preferably through the silicon wafer to form the via 105;
  • the projection of the silicon heater 1011 of the silicon heating element 101 is located at the center of the via 105 and has a large outer dimension Less than the size of the through hole 105;
  • a photoresist is prepared on the fixed end 102 of the silicon heating element 101, dried, and etched to remove metal other than the electrical extraction pad metal Pad 21 on the fixed end 102 of the silicon heating element 101;
  • the silicon oxide 23 on the surface of the silicon heating element 101 generated in the second step is removed by using a hydrofluoric acid solution or a hydrofluoric acid gas mist to remove the photoresist of the ninth step;
  • the eleventh step the silicon exposed to the outer surface of the silicon oxide heating element 101, forming a thin layer of silicon oxide having a thickness of more than ten nm to 100 nm, as a passivation protective layer 22;

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Abstract

L'invention concerne un détecteur MEMS de méthane (système micro-électromécanique) fondé sur un dispositif de chauffage de silicium et son procédé de fabrication, des détecteurs de méthane et leurs procédés de fabrication et, plus précisément, un détecteur de méthane utilisant une technique de traitement MEMS, un procédé de fabrication du détecteur et un procédé de détection de méthane associé. Le détecteur de méthane utilise une tranche de silicium monocristallin courante pour le dispositif de chauffage de silicium (1011). Le dispositif de chauffage de silicium (1011) sert également en tant que composant sensible au méthane et élimine le besoin pour un support de catalyseur et un matériau catalyseur. Le procédé de traitement du détecteur de méthane est compatible avec le procédé CMOS, présente l'avantage d'être peu coûteux en cas de production à grande échelle et permet l'étalonnage de lots. Le détecteur de méthane a pour caractéristiques une faible consommation d'énergie, une grande sensibilité et une vitesse de réponse rapide, empêche la détection du méthane d'être affectée en cas de déficit en oxygène et est exempt des effets associés à l'utilisation d'un catalyseur, tel que dépôt de carbone et empoisonnement du catalyseur.
PCT/CN2015/091133 2014-10-31 2015-09-29 Détecteur mems de méthane fondé sur un dispositif de chauffage de silicium, son procédé de fabrication et ses applications WO2016066003A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410607093.4 2014-10-31
CN201410607093.4A CN104316576B (zh) 2014-10-31 2014-10-31 基于硅加热器的mems甲烷传感器及其制备方法与应用

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Publication Number Publication Date
WO2016066003A1 true WO2016066003A1 (fr) 2016-05-06

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CN104316576B (zh) * 2014-10-31 2017-05-31 中国矿业大学 基于硅加热器的mems甲烷传感器及其制备方法与应用
CN108226235B (zh) * 2016-12-21 2020-12-15 中国矿业大学 一种电容式mems气体传感器
CN109856336B (zh) * 2019-02-28 2020-07-03 中国矿业大学 一种确定mems甲烷传感器最佳工作电流的方法

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