WO2016045254A1 - Method for manufacturing low-temperature polycrystalline silicon thin film, low-temperature polycrystalline silicon thin film and device using same - Google Patents

Method for manufacturing low-temperature polycrystalline silicon thin film, low-temperature polycrystalline silicon thin film and device using same Download PDF

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WO2016045254A1
WO2016045254A1 PCT/CN2015/070498 CN2015070498W WO2016045254A1 WO 2016045254 A1 WO2016045254 A1 WO 2016045254A1 CN 2015070498 W CN2015070498 W CN 2015070498W WO 2016045254 A1 WO2016045254 A1 WO 2016045254A1
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layer
low
temperature polysilicon
substrate
alkali metal
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张慧娟
刘建宏
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京东方科技集团股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/30—Organic light-emitting transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H10K71/421—Thermal treatment, e.g. annealing in the presence of a solvent vapour using coherent electromagnetic radiation, e.g. laser annealing

Definitions

  • the invention relates to the field of display panel manufacturing, in particular to a low-temperature polysilicon film and a manufacturing method thereof, a low-temperature polysilicon thin film transistor, an array substrate and a display device.
  • OLEDs Organic light-emitting displays
  • AMOLED active matrix organic light-emitting display
  • polycrystalline silicon thin film transistors are often used in AMOLED backplane technology.
  • the polysilicon thin film transistor has the advantages of low power consumption and large electron mobility.
  • Early polysilicon thin film transistors have process temperatures as high as 1000 ° C, so the choice of substrate material is greatly limited. Recently, due to the development of lasers, the process temperature of polysilicon thin film transistors can be reduced to below 600 ° C.
  • Polycrystalline silicon thin film transistors fabricated by such a process are also referred to as low temperature polysilicon thin film transistors (LTPS TFTs).
  • one of the steps is to form a polysilicon film on the substrate, and the subsequent process will form the source/drain regions and the channel region of the thin film transistor based on the polysilicon film.
  • the key technology for LTPS TFT fabrication is the crystallization method for converting amorphous silicon into polycrystalline silicon.
  • These methods can be divided into two types: non-laser crystallization and laser annealing.
  • non-laser crystallization method the simplest method is solid phase crystallization (SPC), but SPC needs to be annealed at 600 ° C for 10 hr, which is not suitable for large-area glass substrates.
  • SPC solid phase crystallization
  • laser annealing methods the most widely used is excimer laser annealing (ELA) because of its extremely high crystallinity, fast crystallization rate, and high mobility.
  • ELA excimer laser annealing
  • the electrical properties of the low temperature polysilicon thin film transistor include mobility, mobility, and threshold voltage stability.
  • the input voltage corresponding to the midpoint of the turning region in which the output voltage of the thin film transistor transmission characteristic curve abruptly changes with the change of the input voltage is generally referred to as a threshold voltage.
  • the threshold voltage of a thin film transistor is related to many factors including the doping of the underlying crystalline silicon layer, the thickness of the dielectric, the gate material, and the state of charge at the interface of the dielectric or dielectric and the semiconductor.
  • movable alkali metal ions Na + , etc.
  • the polysilicon film prepared by the prior art often contains more movable alkali metal ions, so that the threshold voltage drift of the thin film transistor made of the polysilicon film affects the performance of the thin film transistor.
  • embodiments of the present invention provide a low temperature polysilicon film and a method for fabricating the same, a low temperature polysilicon thin film transistor, an array substrate, and a display device for reducing alkali metal ions in a low temperature polysilicon film, thereby effectively preventing low temperature polysilicon thin film transistors Threshold voltage drift.
  • a method for fabricating a low temperature polysilicon film including the following steps:
  • Excimer laser annealing is performed on the substrate on which the alkali metal ion adsorption layer is formed, and the amorphous silicon layer is converted into a polysilicon layer;
  • the alkali metal ion adsorption layer is removed to form a polysilicon film on the substrate.
  • the material of the alkali metal ion adsorption layer may be, for example, a phosphosilicate glass.
  • forming an alkali metal ion adsorption layer on the amorphous silicon layer includes the following steps:
  • P is doped into the SiO 2 film by ion implantation to form a phosphosilicate glass layer.
  • the thickness of the SiO 2 film may be, for example, 80 to 150 nm.
  • ion implantation may be performed using a phosphine gas, and P may be doped into the SiO 2 film, and an implantation energy at the time of ion implantation is 15 to 25 keV, and an implantation concentration is 0.8 to 1.2 E 15 /cm 2 .
  • the substrate on which the alkali metal ion adsorption layer is formed is subjected to an excimer laser Annealing includes the following steps:
  • the substrate on which the phosphosilicate glass layer was formed was subjected to laser annealing at a laser pulse frequency of 500 Hz and a laser energy density of 350 to 450 mJ/cm 2 .
  • removing the alkali metal ion absorbing layer includes the following steps:
  • the substrate subjected to excimer laser annealing is treated with a hydrofluoric acid solution having a concentration of 1-5 wt% to remove the phosphosilicate glass layer on the substrate.
  • a step of forming a buffer layer on the substrate is further included before forming the amorphous silicon layer, and then the amorphous silicon layer is formed on the buffer layer.
  • the amorphous silicon layer may have a thickness of, for example, 40 to 80 nm.
  • a low temperature polysilicon film which is fabricated by the above-described fabrication method.
  • a low temperature polysilicon thin film transistor which is produced by using the above low temperature polysilicon film.
  • an array substrate comprising the above-described low temperature polysilicon thin film transistor formed on a base substrate.
  • a display device comprising the above array substrate.
  • an alkali metal ion adsorption layer is formed on the amorphous silicon layer, so that when the excimer laser annealing is performed, the alkali metal ion adsorption layer can adsorb the formed polysilicon layer.
  • the alkali metal ion adsorption layer can also function as a heat insulating layer, which can make the temperature of the silicon layer uniform during the crystallization process, and is favorable for forming a polysilicon layer having a uniform grain size.
  • FIG. 1 is a schematic flow chart of a method for fabricating a low temperature polysilicon film according to an embodiment of the present invention
  • FIG. 2 is a schematic flow chart of a method for fabricating a low temperature polysilicon film according to a specific embodiment of the present invention
  • FIG. 3 is a schematic view showing ion implantation of a SiO 2 layer in a specific embodiment of the present invention.
  • FIG. 4 is a schematic view showing excimer laser annealing of a substrate on which a phosphosilicate glass layer is formed in a specific embodiment of the present invention.
  • Embodiments of the present invention provide a low temperature polysilicon film and a method for fabricating the same, a low temperature polysilicon thin film transistor, an array substrate, and a display device for reducing alkali metal ions in a low temperature polysilicon film, thereby effectively preventing threshold voltage drift of the low temperature polysilicon thin film transistor.
  • a method for fabricating a low temperature polysilicon film is provided. As shown in FIG. 1, the manufacturing method includes:
  • Step a forming an amorphous silicon layer on the substrate
  • Step b forming an alkali metal ion adsorption layer on the amorphous silicon layer
  • Step c performing excimer laser annealing on the substrate on which the alkali metal ion adsorption layer is formed, and converting the amorphous silicon layer into a polysilicon layer;
  • Step d removing the alkali metal ion adsorption layer to form a polysilicon film on the substrate.
  • an alkali metal ion adsorption layer is formed on the amorphous silicon layer, so that the polycrystalline silicon can be adsorbed by the alkali metal ion adsorption layer during excimer laser annealing.
  • the alkali metal ions in the layer reduce the alkali metal ions in the low-temperature polysilicon film, thereby effectively preventing the threshold voltage drift of the low-temperature polysilicon thin film transistor.
  • the alkali metal ion adsorption layer can also function as a heat insulating layer, so that the temperature of the silicon layer is uniform during the crystallization process, which is favorable for forming a polysilicon layer having a uniform grain size.
  • the material of the alkali metal ion adsorption layer may be, for example, a phosphosilicate glass.
  • Phosphorus silica glass is a SiO 2 containing P element which acts against alkali metal ions. In the PSG, a part of silicon in SiO 2 is replaced with a pentavalent phosphorus atom to form a negative electric center, thereby being capable of trapping an alkali metal ion such as Na + .
  • the step b includes:
  • P is doped into the SiO 2 film by ion implantation to form a phosphosilicate glass layer.
  • the thickness of the SiO 2 film may be, for example, 80 to 150 nm.
  • ion implantation may be performed using a phosphine gas, and P may be doped into the SiO 2 film, and the implantation energy at the time of ion implantation is, for example, 15 to 25 keV, and the implantation concentration is, for example, 0.8 to 1.2 E 15 /cm 2 .
  • the step c includes:
  • the substrate on which the phosphosilicate glass layer is formed is subjected to laser annealing, wherein the laser pulse frequency is, for example, 500 Hz, and the laser energy density is, for example, 350 to 450 mJ/cm 2 .
  • the alkali metal ion in the formed polysilicon layer can be adsorbed by the alkali metal ion adsorption layer, thereby reducing the alkali metal ions in the low temperature polysilicon film, thereby effectively preventing the threshold voltage drift of the low temperature polysilicon thin film transistor.
  • the step d includes:
  • the substrate subjected to the step c is treated with a hydrofluoric acid solution having a concentration of 1-5 wt% to remove the phosphosilicate glass layer on the substrate.
  • a step of forming a buffer layer on the substrate is further included, and then the amorphous silicon layer is formed on the buffer layer.
  • the amorphous silicon layer may have a thickness of, for example, 40 to 80 nm.
  • a low temperature polysilicon film which is fabricated by the above-described fabrication method.
  • a low temperature polysilicon thin film transistor which is produced by using the above low temperature polysilicon film.
  • an array substrate comprising the low temperature polysilicon thin film transistor as described above formed on a base substrate.
  • a display device comprising the array substrate as described above.
  • the display device may be, for example, a liquid crystal panel, a liquid crystal television, a liquid crystal display, an OLED display panel, an OLED display, a digital photo frame, a mobile phone, a tablet computer, or the like, or any product or component having a display function.
  • the method for fabricating the low temperature polysilicon film of the present embodiment includes the following steps.
  • Step 21 A buffer layer 2 is deposited on the base substrate 1.
  • the base substrate 1 may be a glass substrate or a quartz substrate.
  • the buffer layer 2 may be a single layer structure or a two layer structure.
  • the upper layer of the buffer layer is a SiO 2 film
  • the lower layer of the buffer layer is a SiNx film.
  • the thickness of the SiNx film may be 50-150 nm
  • the thickness of the SiO 2 film may be 200-400 nm.
  • the buffer layer 2 has a single layer structure
  • the buffer layer 2 is a SiNx film or a SiO 2 film.
  • the thickness of the SiNx film may be 50-150 nm, and the thickness of the SiO 2 film may be 200-400 nm.
  • Step 22 depositing an amorphous silicon layer 3 on the buffer layer 2.
  • a layer of a-Si (amorphous silicon) is deposited on the buffer layer 2 to form an amorphous silicon layer 3.
  • the amorphous silicon layer 3 may have a thickness of 40 to 80 nm.
  • Step 23 depositing a thin film 4 of SiO 2 on the amorphous silicon layer 3.
  • the SiO 2 film 4 may have a thickness of 80 to 150 nm.
  • Step 24 P is doped into the SiO 2 film 4 by ion implantation using a phosphine gas.
  • P is doped into the SiO 2 film 4 at an implantation concentration of 0.8 to 1.2 E 15 /cm 2 at a implantation concentration of 15 to 25 keV using a phosphine gas PH 3 having a concentration of 10%. PSG layer.
  • the implantation energy at the time of ion implantation may be 20 keV, and the implantation concentration may be 1E 15 /cm 2 .
  • Step 25 Excimer laser annealing is performed on the substrate subjected to the above steps as shown in FIG.
  • the laser pulse frequency may be 500 Hz
  • the laser energy density may be 350-450 mJ/cm 2 .
  • the crystallization process of the amorphous silicon to the polycrystalline silicon is completed, and the PSG layer absorbs the alkali metal ions in the crystalline silicon layer, thereby reducing the alkali metal ions in the formed low-temperature polysilicon film, thereby effectively preventing the use of the Threshold voltage drift of a low temperature polysilicon thin film transistor made of a low temperature polysilicon film.
  • the PSG layer can also function as a heat insulating layer, which can make the temperature of the silicon layer uniform during the crystallization process, and is favorable for forming a polysilicon layer having a uniform grain size.
  • Step 26 The PSG layer was removed in the HF solution.
  • Hydrofluoric acid is capable of dissolving silica to form gaseous silicon tetrafluoride but does not react directly with silicon. Therefore, this embodiment utilizes a hydrofluoric acid solution having a concentration of 1-5 wt% for the substrate subjected to step 25 Process it.
  • the PSG layer formed on the substrate was placed face down in a pickling apparatus, and the PSG layer was removed using a roller with a hydrofluoric acid solution.
  • a protective film may be coated on the surface of the glass substrate.
  • the processing time can be, for example, 10-60 s, and the PSG layer on the polysilicon layer can be removed to obtain a polysilicon film.
  • the technical solution of the embodiment makes the process of adsorbing alkali metal ions by PSG and the excimer laser annealing process simultaneously, and the process is simple and easy to operate.

Abstract

A method for manufacturing a low-temperature polycrystalline silicon thin film, a low-temperature polycrystalline silicon thin film and a device using the same, which relate to the field of display panel manufacturing. The method for manufacturing a low-temperature polycrystalline silicon thin film comprises the following steps: forming an amorphous silicon layer (3) on a substrate (1); forming an alkali metal ion adsorption layer (4) on the amorphous silicon layer (3); conducting quasi-molecular laser annealing on the substrate (1) on which the alkali metal ion adsorption layer (4) is formed, to convert the amorphous silicon layer (3) into a polycrystalline silicon layer; and removing the alkali metal ion adsorption layer (4) to form a polycrystalline silicon thin film on the substrate (1).

Description

低温多晶硅薄膜的制作方法、低温多晶硅薄膜及使用其的器件Method for manufacturing low temperature polysilicon film, low temperature polysilicon film and device using same
相关申请的交叉参考Cross-reference to related applications
本申请主张在2014年9月23日在中国提交的中国专利申请号No.201410492155.1的优先权，其全部内容通过引用包含于此。The present application claims priority to Chinese Patent Application No. 201410492155.1, filed on Sep. 23, 2014, in
技术领域Technical field
本发明涉及显示面板制造领域，特别是指一种低温多晶硅薄膜及其制作方法、低温多晶硅薄膜晶体管、阵列基板及显示装置。The invention relates to the field of display panel manufacturing, in particular to a low-temperature polysilicon film and a manufacturing method thereof, a low-temperature polysilicon thin film transistor, an array substrate and a display device.
背景技术Background technique
有机发光显示器(OLED)由于具有自主发光、快速响应、轻薄、低功耗并可实现柔性显示等诸多优点而备受关注，被认为是下一代的平板显示技术。目前，OLED技术已逐步应用于各种电子产品中，其中有源矩阵有机发光显示屏(AMOLED)凭借高画质、移动图像响应时间短、低功耗、宽视角及超轻超薄等优点而成为OLED发展的主要趋势。Organic light-emitting displays (OLEDs) are attracting attention due to their many advantages such as autonomous illumination, fast response, light weight, low power consumption, and flexible display. They are considered to be the next generation of flat panel display technology. At present, OLED technology has been gradually applied to various electronic products, among which the active matrix organic light-emitting display (AMOLED) has the advantages of high image quality, short response time of moving image, low power consumption, wide viewing angle and ultra-light and ultra-thin. Become the main trend of OLED development.
目前，AMOLED背板技术中多采用多晶硅薄膜晶体管。多晶硅薄膜晶体管具有消耗功率小且电子迁移率大等优点。早期的多晶硅薄膜晶体管的制程温度高达1000℃，因此基板材质的选择受到大幅限制。近来，由于激光的发展，多晶硅薄膜晶体管的制程温度可降至600℃以下，利用此种制程方式所制得的多晶硅薄膜晶体管又被称为低温多晶硅薄膜晶体管(LTPS TFT)。At present, polycrystalline silicon thin film transistors are often used in AMOLED backplane technology. The polysilicon thin film transistor has the advantages of low power consumption and large electron mobility. Early polysilicon thin film transistors have process temperatures as high as 1000 ° C, so the choice of substrate material is greatly limited. Recently, due to the development of lasers, the process temperature of polysilicon thin film transistors can be reduced to below 600 ° C. Polycrystalline silicon thin film transistors fabricated by such a process are also referred to as low temperature polysilicon thin film transistors (LTPS TFTs).
在现有LTPS TFT的制程中，其中一个步骤是在基板上形成一层多晶硅薄膜，后续制程会基于该多晶硅薄膜形成薄膜晶体管的源极/漏极区与沟道区。In the prior art LTPS TFT process, one of the steps is to form a polysilicon film on the substrate, and the subsequent process will form the source/drain regions and the channel region of the thin film transistor based on the polysilicon film.
LTPS TFT制备的关键技术是将非晶硅转变为多晶硅的结晶化方法。这些方法可以分成非激光结晶和激光退火两类。在非激光结晶方法中，最简单的方法是固相结晶(SPC)，但SPC需在600℃退火10hr，不适用于大面积玻璃基板。在激光退火方法中，应用最广泛的是准分子激光退火(ELA)，因为其结晶度极高、结晶速度快且迁移率高。另外，ELA已经应用于大规模生产。 The key technology for LTPS TFT fabrication is the crystallization method for converting amorphous silicon into polycrystalline silicon. These methods can be divided into two types: non-laser crystallization and laser annealing. In the non-laser crystallization method, the simplest method is solid phase crystallization (SPC), but SPC needs to be annealed at 600 ° C for 10 hr, which is not suitable for large-area glass substrates. Among laser annealing methods, the most widely used is excimer laser annealing (ELA) because of its extremely high crystallinity, fast crystallization rate, and high mobility. In addition, ELA has been applied to mass production.
低温多晶硅薄膜晶体管的电学性能包括有迁移率大小、迁移率及阈值电压(Threshold voltage)的稳定性等。通常将薄膜晶体管传输特性曲线中输出电压随输入电压的改变而急剧变化的转折区的中点所对应的输入电压称为阈值电压。薄膜晶体管的阈值电压和很多因素有关，包括基底层晶硅层的掺杂、电介质的厚度、栅极材质、以及电介质或电介质与半导体的界面处的电荷状况等等。其中，可动碱金属离子(Na+等)是导致薄膜晶体管阈值电压漂移的主要原因之一。现有技术制备的多晶硅薄膜中往往含有较多的可动碱金属离子，使得采用该多晶硅薄膜制成的薄膜晶体管的阈值电压漂移，进而影响薄膜晶体管的性能。The electrical properties of the low temperature polysilicon thin film transistor include mobility, mobility, and threshold voltage stability. The input voltage corresponding to the midpoint of the turning region in which the output voltage of the thin film transistor transmission characteristic curve abruptly changes with the change of the input voltage is generally referred to as a threshold voltage. The threshold voltage of a thin film transistor is related to many factors including the doping of the underlying crystalline silicon layer, the thickness of the dielectric, the gate material, and the state of charge at the interface of the dielectric or dielectric and the semiconductor. Among them, movable alkali metal ions (Na + , etc.) are one of the main causes of threshold voltage drift of thin film transistors. The polysilicon film prepared by the prior art often contains more movable alkali metal ions, so that the threshold voltage drift of the thin film transistor made of the polysilicon film affects the performance of the thin film transistor.
发明内容Summary of the invention
有鉴于此，本发明实施例提供了一种低温多晶硅薄膜及其制作方法、低温多晶硅薄膜晶体管、阵列基板及显示装置，用以减少低温多晶硅薄膜中的碱金属离子，从而有效防止低温多晶硅薄膜晶体管的阈值电压漂移。In view of this, embodiments of the present invention provide a low temperature polysilicon film and a method for fabricating the same, a low temperature polysilicon thin film transistor, an array substrate, and a display device for reducing alkali metal ions in a low temperature polysilicon film, thereby effectively preventing low temperature polysilicon thin film transistors Threshold voltage drift.
为解决上述技术问题，根据本发明的一个实施例，提供一种低温多晶硅薄膜的制作方法，包括如下步骤：In order to solve the above technical problem, according to an embodiment of the present invention, a method for fabricating a low temperature polysilicon film is provided, including the following steps:
在基板上形成非晶硅层；Forming an amorphous silicon layer on the substrate;
在所述非晶硅层上形成碱金属离子吸附层；Forming an alkali metal ion adsorption layer on the amorphous silicon layer;
对形成有所述碱金属离子吸附层的基板进行准分子激光退火，使所述非晶硅层转化成多晶硅层；Excimer laser annealing is performed on the substrate on which the alkali metal ion adsorption layer is formed, and the amorphous silicon layer is converted into a polysilicon layer;
去除碱金属离子吸附层，在所述基板上形成多晶硅薄膜。The alkali metal ion adsorption layer is removed to form a polysilicon film on the substrate.
在一个示例中，所述碱金属离子吸附层的材料例如可以为磷硅玻璃。In one example, the material of the alkali metal ion adsorption layer may be, for example, a phosphosilicate glass.
在一个示例中，在所述非晶硅层上形成碱金属离子吸附层包括如下步骤：In one example, forming an alkali metal ion adsorption layer on the amorphous silicon layer includes the following steps:
在所述非晶硅层上沉积一层SiO2薄膜；Depositing a thin film of SiO 2 on the amorphous silicon layer;
通过离子注入的方式将P掺入所述SiO2薄膜中，形成磷硅玻璃层。P is doped into the SiO 2 film by ion implantation to form a phosphosilicate glass layer.
其中，所述SiO2薄膜的厚度例如可以为80-150nm。The thickness of the SiO 2 film may be, for example, 80 to 150 nm.
进一步地，例如可以利用磷烷气体进行离子注入，将P掺入所述SiO2薄膜中，离子注入时的注入能量为15-25keV，注入浓度为0.8-1.2E15/cm2。Further, for example, ion implantation may be performed using a phosphine gas, and P may be doped into the SiO 2 film, and an implantation energy at the time of ion implantation is 15 to 25 keV, and an implantation concentration is 0.8 to 1.2 E 15 /cm 2 .
在一个示例中，对形成有所述碱金属离子吸附层的基板进行准分子激光 退火包括如下步骤：In one example, the substrate on which the alkali metal ion adsorption layer is formed is subjected to an excimer laser Annealing includes the following steps:
对形成有所述磷硅玻璃层的基板进行激光退火，激光脉冲频率为500Hz，激光能量密度为350-450mJ/cm2。The substrate on which the phosphosilicate glass layer was formed was subjected to laser annealing at a laser pulse frequency of 500 Hz and a laser energy density of 350 to 450 mJ/cm 2 .
在一个示例中，去除碱金属离子吸附层包括如下步骤：In one example, removing the alkali metal ion absorbing layer includes the following steps:
利用浓度为1-5wt％的氢氟酸溶液对经过准分子激光退火后的基板进行处理，去除基板上的磷硅玻璃层。The substrate subjected to excimer laser annealing is treated with a hydrofluoric acid solution having a concentration of 1-5 wt% to remove the phosphosilicate glass layer on the substrate.
在一个示例中，在形成所述非晶硅层之前还包括在基板上形成缓冲层的步骤，然后，在所述缓冲层上形成所述非晶硅层。In one example, a step of forming a buffer layer on the substrate is further included before forming the amorphous silicon layer, and then the amorphous silicon layer is formed on the buffer layer.
在一个示例中，所述非晶硅层的厚度例如可以为40-80nm。In one example, the amorphous silicon layer may have a thickness of, for example, 40 to 80 nm.
根据本发明的另一个实施例，还提供了一种低温多晶硅薄膜，其为采用上述制作方法制作而成。According to another embodiment of the present invention, there is also provided a low temperature polysilicon film which is fabricated by the above-described fabrication method.
根据本发明的另一个实施例，还提供了一种低温多晶硅薄膜晶体管，其为采用上述低温多晶硅薄膜制得。According to another embodiment of the present invention, there is also provided a low temperature polysilicon thin film transistor which is produced by using the above low temperature polysilicon film.
根据本发明的另一个实施例，还提供了一种阵列基板，其包括形成在衬底基板上的上述低温多晶硅薄膜晶体管。According to another embodiment of the present invention, there is also provided an array substrate comprising the above-described low temperature polysilicon thin film transistor formed on a base substrate.
根据本发明的另一个实施例，还提供了一种显示装置，其包括上述阵列基板。According to another embodiment of the present invention, there is also provided a display device comprising the above array substrate.
本发明实施例具有以下有益效果：Embodiments of the present invention have the following beneficial effects:
上述技术方案中，在形成非晶硅层之后，在非晶硅层上形成碱金属离子吸附层，因此在进行准分子激光退火时，通过碱金属离子吸附层能够吸附所形成的多晶硅层中的碱金属离子，从而减少低温多晶硅薄膜中的碱金属离子，进而能够有效防止低温多晶硅薄膜晶体管的阈值电压漂移。In the above technical solution, after the amorphous silicon layer is formed, an alkali metal ion adsorption layer is formed on the amorphous silicon layer, so that when the excimer laser annealing is performed, the alkali metal ion adsorption layer can adsorb the formed polysilicon layer. Alkali metal ions, thereby reducing alkali metal ions in the low-temperature polysilicon film, thereby effectively preventing threshold voltage drift of the low-temperature polysilicon thin film transistor.
另外，碱金属离子吸附层还可以起到保温层的作用，能够使晶化过程中硅层的温度均匀一致，有利于形成晶粒尺寸大小一致的多晶硅层。In addition, the alkali metal ion adsorption layer can also function as a heat insulating layer, which can make the temperature of the silicon layer uniform during the crystallization process, and is favorable for forming a polysilicon layer having a uniform grain size.
附图说明DRAWINGS
图1为本发明实施例中低温多晶硅薄膜的制作方法的流程示意图；1 is a schematic flow chart of a method for fabricating a low temperature polysilicon film according to an embodiment of the present invention;
图2为本发明的具体实施例中低温多晶硅薄膜的制作方法的流程示意图； 2 is a schematic flow chart of a method for fabricating a low temperature polysilicon film according to a specific embodiment of the present invention;
图3为本发明的具体实施例中对SiO2层进行离子注入的示意图；3 is a schematic view showing ion implantation of a SiO 2 layer in a specific embodiment of the present invention;
图4为本发明的具体实施例中对形成有磷硅玻璃层的基板进行准分子激光退火的示意图。4 is a schematic view showing excimer laser annealing of a substrate on which a phosphosilicate glass layer is formed in a specific embodiment of the present invention.
具体实施方式detailed description
为使本发明实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。以下实施例不用来限制本发明的范围。The technical problems, the technical solutions, and the advantages of the embodiments of the present invention will be more clearly described in the following description. The following examples are not intended to limit the scope of the invention.
本发明实施例提供一种低温多晶硅薄膜及其制作方法、低温多晶硅薄膜晶体管、阵列基板及显示装置，用以减少低温多晶硅薄膜中的碱金属离子，从而有效防止低温多晶硅薄膜晶体管的阈值电压漂移。Embodiments of the present invention provide a low temperature polysilicon film and a method for fabricating the same, a low temperature polysilicon thin film transistor, an array substrate, and a display device for reducing alkali metal ions in a low temperature polysilicon film, thereby effectively preventing threshold voltage drift of the low temperature polysilicon thin film transistor.
根据本发明的一个实施例，提供了一种低温多晶硅薄膜的制作方法，如图1所示，所述制作方法包括：According to an embodiment of the present invention, a method for fabricating a low temperature polysilicon film is provided. As shown in FIG. 1, the manufacturing method includes:
步骤a：在基板上形成非晶硅层；Step a: forming an amorphous silicon layer on the substrate;
步骤b：在所述非晶硅层上形成碱金属离子吸附层；Step b: forming an alkali metal ion adsorption layer on the amorphous silicon layer;
步骤c：对形成有所述碱金属离子吸附层的基板进行准分子激光退火，使所述非晶硅层转化成多晶硅层；Step c: performing excimer laser annealing on the substrate on which the alkali metal ion adsorption layer is formed, and converting the amorphous silicon layer into a polysilicon layer;
步骤d：去除碱金属离子吸附层，在所述基板上形成多晶硅薄膜。Step d: removing the alkali metal ion adsorption layer to form a polysilicon film on the substrate.
根据本发明实施例的制作方法，在形成非晶硅层之后，在非晶硅层上形成碱金属离子吸附层，因此在进行准分子激光退火时，通过碱金属离子吸附层能够吸附形成的多晶硅层中的碱金属离子，从而减少低温多晶硅薄膜中的碱金属离子，进而能够有效防止低温多晶硅薄膜晶体管的阈值电压漂移。另外，碱金属离子吸附层还可以起到保温层的作用，使得在晶化过程中硅层的温度均匀一致，有利于形成晶粒尺寸大小一致的多晶硅层。According to the manufacturing method of the embodiment of the present invention, after the amorphous silicon layer is formed, an alkali metal ion adsorption layer is formed on the amorphous silicon layer, so that the polycrystalline silicon can be adsorbed by the alkali metal ion adsorption layer during excimer laser annealing. The alkali metal ions in the layer reduce the alkali metal ions in the low-temperature polysilicon film, thereby effectively preventing the threshold voltage drift of the low-temperature polysilicon thin film transistor. In addition, the alkali metal ion adsorption layer can also function as a heat insulating layer, so that the temperature of the silicon layer is uniform during the crystallization process, which is favorable for forming a polysilicon layer having a uniform grain size.
在一个示例中，所述碱金属离子吸附层的材料例如可以为磷硅玻璃。磷硅玻璃(PSG)是一种含有P元素的SiO2，可以起到对抗碱金属离子的作用。PSG中用五价磷原子替代了SiO2中的部分硅，形成负电中心，从而能够俘获Na+等碱金属离子。In one example, the material of the alkali metal ion adsorption layer may be, for example, a phosphosilicate glass. Phosphorus silica glass (PSG) is a SiO 2 containing P element which acts against alkali metal ions. In the PSG, a part of silicon in SiO 2 is replaced with a pentavalent phosphorus atom to form a negative electric center, thereby being capable of trapping an alkali metal ion such as Na + .
在一个示例中，所述步骤b包括： In one example, the step b includes:
在所述非晶硅层上沉积一层SiO2薄膜；Depositing a thin film of SiO 2 on the amorphous silicon layer;
通过离子注入的方式将P掺入所述SiO2薄膜中，形成磷硅玻璃层。P is doped into the SiO 2 film by ion implantation to form a phosphosilicate glass layer.
其中，所述SiO2薄膜的厚度例如可以为80-150nm。The thickness of the SiO 2 film may be, for example, 80 to 150 nm.
进一步地，例如可以利用磷烷气体进行离子注入，将P掺入所述SiO2薄膜中，离子注入时的注入能量例如为15-25keV，注入浓度例如为0.8-1.2E15/cm2。Further, for example, ion implantation may be performed using a phosphine gas, and P may be doped into the SiO 2 film, and the implantation energy at the time of ion implantation is, for example, 15 to 25 keV, and the implantation concentration is, for example, 0.8 to 1.2 E 15 /cm 2 .
在一个示例中，所述步骤c包括：In one example, the step c includes:
对形成有所述磷硅玻璃层的基板进行激光退火，其中，激光脉冲频率例如为500Hz，激光能量密度例如为350-450mJ/cm2。The substrate on which the phosphosilicate glass layer is formed is subjected to laser annealing, wherein the laser pulse frequency is, for example, 500 Hz, and the laser energy density is, for example, 350 to 450 mJ/cm 2 .
在进行准分子激光退火时，通过碱金属离子吸附层能够吸附形成的多晶硅层中的碱金属离子，从而减少低温多晶硅薄膜中的碱金属离子，进而能够有效防止低温多晶硅薄膜晶体管的阈值电压漂移。In the excimer laser annealing, the alkali metal ion in the formed polysilicon layer can be adsorbed by the alkali metal ion adsorption layer, thereby reducing the alkali metal ions in the low temperature polysilicon film, thereby effectively preventing the threshold voltage drift of the low temperature polysilicon thin film transistor.
在一个示例中，所述步骤d包括：In one example, the step d includes:
利用浓度为1-5wt％的氢氟酸溶液对经过步骤c的基板进行处理，去除基板上的磷硅玻璃层。The substrate subjected to the step c is treated with a hydrofluoric acid solution having a concentration of 1-5 wt% to remove the phosphosilicate glass layer on the substrate.
在一个示例中，所述步骤a中，在形成所述非晶硅层之前还包括在基板上形成缓冲层的步骤，然后，在所述缓冲层上形成所述非晶硅层。In one example, in the step a, before the forming the amorphous silicon layer, a step of forming a buffer layer on the substrate is further included, and then the amorphous silicon layer is formed on the buffer layer.
在一个示例中，所述非晶硅层的厚度例如可以为40-80nm。In one example, the amorphous silicon layer may have a thickness of, for example, 40 to 80 nm.
根据本发明的另一个实施例，还提供了一种低温多晶硅薄膜，其为采用上述制作方法制作而成。According to another embodiment of the present invention, there is also provided a low temperature polysilicon film which is fabricated by the above-described fabrication method.
根据本发明的另一个实施例，还提供了一种低温多晶硅薄膜晶体管，其为采用上述低温多晶硅薄膜制得。According to another embodiment of the present invention, there is also provided a low temperature polysilicon thin film transistor which is produced by using the above low temperature polysilicon film.
根据本发明的另一个实施例，还提供了一种阵列基板，其包括形成在衬底基板上的如上所述的低温多晶硅薄膜晶体管。According to another embodiment of the present invention, there is further provided an array substrate comprising the low temperature polysilicon thin film transistor as described above formed on a base substrate.
根据本发明的另一个实施例，还提供了一种显示装置，其包括如上所述的阵列基板。According to another embodiment of the present invention, there is also provided a display device comprising the array substrate as described above.
所述显示装置例如可以为：液晶面板、液晶电视、液晶显示器、OLED显示面板、OLED显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件。 The display device may be, for example, a liquid crystal panel, a liquid crystal television, a liquid crystal display, an OLED display panel, an OLED display, a digital photo frame, a mobile phone, a tablet computer, or the like, or any product or component having a display function.
下面结合附图以及具体的实施例对本发明的低温多晶硅薄膜的制作方法进行详细说明。The method for fabricating the low temperature polysilicon film of the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
如图2所示，本实施例的低温多晶硅薄膜的制作方法包括以下步骤。As shown in FIG. 2, the method for fabricating the low temperature polysilicon film of the present embodiment includes the following steps.
步骤21：在衬底基板1上沉积缓冲层2。Step 21: A buffer layer 2 is deposited on the base substrate 1.
其中，衬底基板1可以为玻璃基板或石英基板。The base substrate 1 may be a glass substrate or a quartz substrate.
缓冲层2可以为单层结构或者双层结构。在缓冲层2为双层结构时，缓冲层的上层为SiO2薄膜，缓冲层的下层为SiNx薄膜。其中，SiNx薄膜的厚度可以为50-150nm，SiO2薄膜的厚度可以为200-400nm。在缓冲层2为单层结构时，缓冲层2为SiNx薄膜或SiO2薄膜。其中，SiNx薄膜的厚度可以为50-150nm，SiO2薄膜的厚度可以为200-400nm。The buffer layer 2 may be a single layer structure or a two layer structure. When the buffer layer 2 has a two-layer structure, the upper layer of the buffer layer is a SiO 2 film, and the lower layer of the buffer layer is a SiNx film. The thickness of the SiNx film may be 50-150 nm, and the thickness of the SiO 2 film may be 200-400 nm. When the buffer layer 2 has a single layer structure, the buffer layer 2 is a SiNx film or a SiO 2 film. The thickness of the SiNx film may be 50-150 nm, and the thickness of the SiO 2 film may be 200-400 nm.
步骤22：在缓冲层2上沉积非晶硅层3。Step 22: depositing an amorphous silicon layer 3 on the buffer layer 2.
在缓冲层2上沉积一层a-Si(非晶硅)，形成非晶硅层3。其中，非晶硅层3的厚度可以为40-80nm。A layer of a-Si (amorphous silicon) is deposited on the buffer layer 2 to form an amorphous silicon layer 3. The amorphous silicon layer 3 may have a thickness of 40 to 80 nm.
步骤23：在非晶硅层3上沉积一层SiO2薄膜4。Step 23: depositing a thin film 4 of SiO 2 on the amorphous silicon layer 3.
其中，SiO2薄膜4的厚度可以为80-150nm。Among them, the SiO 2 film 4 may have a thickness of 80 to 150 nm.
步骤24：使用磷烷气体通过离子注入的方式将P掺入SiO2薄膜4中。Step 24: P is doped into the SiO 2 film 4 by ion implantation using a phosphine gas.
如图3所示，使用浓度为10％的磷烷气体PH3，在15-25keV的注入能量下，以0.8-1.2E15/cm2的注入浓度将P掺入SiO2薄膜4中，形成PSG层。进一步地，离子注入时的注入能量可以为20keV，注入浓度可以为1E15/cm2。As shown in FIG. 3 , P is doped into the SiO 2 film 4 at an implantation concentration of 0.8 to 1.2 E 15 /cm 2 at a implantation concentration of 15 to 25 keV using a phosphine gas PH 3 having a concentration of 10%. PSG layer. Further, the implantation energy at the time of ion implantation may be 20 keV, and the implantation concentration may be 1E 15 /cm 2 .
步骤25：如图4所示，对经过上述步骤的衬底基板进行准分子激光退火。Step 25: Excimer laser annealing is performed on the substrate subjected to the above steps as shown in FIG.
其中，激光脉冲频率可以为500Hz，激光能量密度可以为350-450mJ/cm2。Wherein, the laser pulse frequency may be 500 Hz, and the laser energy density may be 350-450 mJ/cm 2 .
在激光退火之后，非晶硅至多晶硅的晶化过程完成，同时PSG层吸收了晶硅层中的碱金属离子，从而减少所形成的低温多晶硅薄膜中的碱金属离子，进而能够有效防止利用该低温多晶硅薄膜制成的低温多晶硅薄膜晶体管的阈值电压漂移。另外，PSG层还可以起到保温层的作用，能够使晶化过程中硅层的温度均匀一致，有利于形成晶粒尺寸大小一致的多晶硅层。After the laser annealing, the crystallization process of the amorphous silicon to the polycrystalline silicon is completed, and the PSG layer absorbs the alkali metal ions in the crystalline silicon layer, thereby reducing the alkali metal ions in the formed low-temperature polysilicon film, thereby effectively preventing the use of the Threshold voltage drift of a low temperature polysilicon thin film transistor made of a low temperature polysilicon film. In addition, the PSG layer can also function as a heat insulating layer, which can make the temperature of the silicon layer uniform during the crystallization process, and is favorable for forming a polysilicon layer having a uniform grain size.
步骤26：在HF溶液中去除PSG层。Step 26: The PSG layer was removed in the HF solution.
氢氟酸(HF)能够溶解二氧化硅，生成气态的四氟化硅，但不与硅直接反应。因此本实施例利用浓度为1-5wt％的氢氟酸溶液对经过步骤25的基板 进行处理。Hydrofluoric acid (HF) is capable of dissolving silica to form gaseous silicon tetrafluoride but does not react directly with silicon. Therefore, this embodiment utilizes a hydrofluoric acid solution having a concentration of 1-5 wt% for the substrate subjected to step 25 Process it.
具体地，将该基板上形成的PSG层朝下放置于酸洗设备中，使用辊轮带氢氟酸溶液的方式，去除该PSG层。为了防止氢氟酸溶液对基板的侵蚀，还可以在玻璃基板表面覆盖保护膜。处理时间例如可以为10-60s，即可去除多晶硅层上的PSG层，得到多晶硅薄膜。Specifically, the PSG layer formed on the substrate was placed face down in a pickling apparatus, and the PSG layer was removed using a roller with a hydrofluoric acid solution. In order to prevent the hydrofluoric acid solution from attacking the substrate, a protective film may be coated on the surface of the glass substrate. The processing time can be, for example, 10-60 s, and the PSG layer on the polysilicon layer can be removed to obtain a polysilicon film.
本实施例的技术方案使PSG吸附碱金属离子的过程与准分子激光退火过程同时实现，工艺简单，易操作。The technical solution of the embodiment makes the process of adsorbing alkali metal ions by PSG and the excimer laser annealing process simultaneously, and the process is simple and easy to operate.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视本发明的保护范围。 The above description is only a preferred embodiment of the present invention, and it should be noted that those skilled in the art can also make several improvements and retouchings without departing from the principles of the present invention. The scope of protection of the invention should be considered.

Claims (13)

  1. 一种低温多晶硅薄膜的制作方法，其包括如下步骤：A method for fabricating a low temperature polysilicon film, comprising the steps of:
    在基板上形成非晶硅层；Forming an amorphous silicon layer on the substrate;
    在所述非晶硅层上形成碱金属离子吸附层；Forming an alkali metal ion adsorption layer on the amorphous silicon layer;
    对形成有所述碱金属离子吸附层的基板进行准分子激光退火，使所述非晶硅层转化成多晶硅层；Excimer laser annealing is performed on the substrate on which the alkali metal ion adsorption layer is formed, and the amorphous silicon layer is converted into a polysilicon layer;
    去除碱金属离子吸附层，在所述基板上形成多晶硅薄膜。The alkali metal ion adsorption layer is removed to form a polysilicon film on the substrate.
  2. 根据权利要求1所述的低温多晶硅薄膜的制作方法，其中，所述碱金属离子吸附层的材料为磷硅玻璃。The method for producing a low-temperature polysilicon film according to claim 1, wherein the material of the alkali metal ion adsorption layer is phosphosilicate glass.
  3. 根据权利要求2所述的低温多晶硅薄膜的制作方法，其中，在所述非晶硅层上形成碱金属离子吸附层包括如下步骤：The method of fabricating a low-temperature polysilicon film according to claim 2, wherein forming the alkali metal ion adsorption layer on the amorphous silicon layer comprises the following steps:
    在所述非晶硅层上沉积一层SiO2薄膜；Depositing a thin film of SiO 2 on the amorphous silicon layer;
    通过离子注入的方式将P掺入所述SiO2薄膜中，形成磷硅玻璃层。P is doped into the SiO 2 film by ion implantation to form a phosphosilicate glass layer.
  4. 根据权利要求3所述的低温多晶硅薄膜的制作方法，其中，所述SiO2薄膜的厚度为80-150nm。The method of producing a low-temperature polysilicon film according to claim 3, wherein the SiO 2 film has a thickness of 80 to 150 nm.
  5. 根据权利要求3所述的低温多晶硅薄膜的制作方法，其中，利用磷烷气体进行离子注入，将P掺入所述SiO2薄膜中，离子注入时的注入能量为15-25keV，注入浓度为0.8-1.2E15/cm2。The method for fabricating a low-temperature polysilicon film according to claim 3, wherein ion implantation is performed by using a phosphine gas, and P is doped into the SiO 2 film, and an implantation energy at the time of ion implantation is 15 to 25 keV, and an implantation concentration is 0.8. -1.2E 15 /cm 2 .
  6. 根据权利要求3所述的低温多晶硅薄膜的制作方法，其中，对形成有所述碱金属离子吸附层的基板进行准分子激光退火包括如下步骤：The method of fabricating a low-temperature polysilicon film according to claim 3, wherein the excimer laser annealing of the substrate on which the alkali metal ion adsorption layer is formed comprises the following steps:
    对形成有所述磷硅玻璃层的基板进行激光退火，激光脉冲频率为500Hz，激光能量密度为350-450mJ/cm2。The substrate on which the phosphosilicate glass layer was formed was subjected to laser annealing at a laser pulse frequency of 500 Hz and a laser energy density of 350 to 450 mJ/cm 2 .
  7. 根据权利要求3所述的低温多晶硅薄膜的制作方法，其中，去除碱金属离子吸附层包括如下步骤：The method of fabricating a low temperature polysilicon film according to claim 3, wherein the removing the alkali metal ion adsorption layer comprises the steps of:
    利用浓度为1-5wt％的氢氟酸溶液对经过准分子激光退火后的基板进行处理，去除基板上的磷硅玻璃层。The substrate subjected to excimer laser annealing is treated with a hydrofluoric acid solution having a concentration of 1-5 wt% to remove the phosphosilicate glass layer on the substrate.
  8. 根据权利要求1-7中任一项所述的低温多晶硅薄膜的制作方法，其中，在形成非晶硅层之前还包括在基板上形成缓冲层的步骤，然后，在所述缓冲 层上形成所述非晶硅层。The method of fabricating a low-temperature polysilicon film according to any one of claims 1 to 7, further comprising the step of forming a buffer layer on the substrate before forming the amorphous silicon layer, and then, in the buffer The amorphous silicon layer is formed on the layer.
  9. 根据权利要求1-8中任一项所述的低温多晶硅薄膜的制作方法，其中，所述非晶硅层的厚度为40-80nm。The method for producing a low-temperature polysilicon film according to any one of claims 1 to 8, wherein the amorphous silicon layer has a thickness of 40 to 80 nm.
  10. 一种低温多晶硅薄膜，其为采用如权利要求1-9中任一项所述的低温多晶硅薄膜的制作方法制作而成。A low-temperature polysilicon film produced by the method for producing a low-temperature polysilicon film according to any one of claims 1-9.
  11. 一种低温多晶硅薄膜晶体管，其为采用如权利要求10所述的低温多晶硅薄膜制得。A low temperature polysilicon thin film transistor produced by using the low temperature polysilicon film of claim 10.
  12. 一种阵列基板，其包括形成在衬底基板上的如权利要求11所述的低温多晶硅薄膜晶体管。An array substrate comprising the low temperature polysilicon thin film transistor of claim 11 formed on a base substrate.
  13. 一种显示装置，其包括如权利要求12所述的阵列基板。 A display device comprising the array substrate of claim 12.
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