WO2016015445A1 - Puce del et son procédé de fabrication - Google Patents

Puce del et son procédé de fabrication Download PDF

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Publication number
WO2016015445A1
WO2016015445A1 PCT/CN2014/095920 CN2014095920W WO2016015445A1 WO 2016015445 A1 WO2016015445 A1 WO 2016015445A1 CN 2014095920 W CN2014095920 W CN 2014095920W WO 2016015445 A1 WO2016015445 A1 WO 2016015445A1
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WO
WIPO (PCT)
Prior art keywords
layer
type
led chip
electrode
transparent electrode
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PCT/CN2014/095920
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English (en)
Chinese (zh)
Inventor
王磊
朱琳
王强
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无锡华润华晶微电子有限公司
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Publication of WO2016015445A1 publication Critical patent/WO2016015445A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Definitions

  • Embodiments of the present invention relate to the field of semiconductor technologies, and in particular, to an LED chip and a method of fabricating the same.
  • LED Light Emitting Diode
  • LED has the advantages of small volume, long life, fast response, high degree of controllability, good stability, low power consumption, no heat radiation, no mercury, and other toxic substances. Its application and promotion has been very rapid since its launch.
  • the structure of the LED chip can be divided into a vertical structure, a formal structure and a flip-chip structure.
  • the flip-chip LED chip has good heat dissipation performance, so it has attracted the attention of technicians.
  • the current flow between the P-type electrode and the N-type electrode is concentrated, resulting in uneven current density distribution, thereby affecting the luminous efficiency of the LED chip.
  • an embodiment of the present invention provides an LED chip and a manufacturing method thereof to solve the problem that the current distribution between the P-type electrode and the N-type electrode is relatively concentrated when the LED chip is operated, and the current density distribution is uneven.
  • an LED chip including:
  • An epitaxial layer the epitaxial layer being on the substrate
  • the transparent electrode layer is located on the epitaxial layer
  • At least two grooves extending longitudinally through the transparent electrode layer and a bottom portion in the epitaxial layer, the grooves being distributed at edges of the transparent electrode layer;
  • An insulating layer, the insulating layer is lined on the sidewall of the trench and on the transparent electrode layer at the edge of the slot;
  • N-type electrode the N-type electrode being on the insulating layer
  • the P-type electrode being located on the transparent electrode layer, wherein distances of the P-type electrode to each of the N-type electrodes are equal.
  • the epitaxial layer includes an N-type GaN layer, an n-GaN or GaN multiple quantum well active layer, and a P-type GaN layer, wherein the N-type GaN layer is on the substrate, and the InGaN or GaN is more A quantum well active layer is on the N-type GaN layer, and the P-type GaN layer is on the InGaN or GaN multiple quantum well active layer.
  • a bottom of the trench is located in the N-type GaN layer; the N-type electrode is in direct contact with the N-type GaN layer.
  • the groove has a cross section of one of a circle, a rectangle, and a square; the number of the grooves is 4, 5, 6, 7, or 8.
  • the material of the transparent electrode layer is ITO, ZnO, or Ni and Au alloy; the material of the insulating layer is one of SiO 2 , Si 3 N 4 , SiON; the N-type electrode and the The material of the P-type electrode is one of Ti, Cr, Pt, Au, Ni, Al, Be, and Ge.
  • the grooves are evenly distributed along the edges of the transparent electrode layer.
  • the LED chip is soldered on a circuit board by flip-chip eutectic soldering, wherein the circuit board includes a substrate and a positive electrode and a negative electrode on the substrate, and the positive electrode is spaced apart from the negative electrode;
  • the P-type electrode is located on the positive electrode, and the N-type electrode is located on the negative electrode.
  • an embodiment of the present invention further provides a method for fabricating an LED chip, including:
  • a P-type electrode is formed on the transparent electrode layer, wherein distances of the P-type electrode to each of the N-type electrodes are equal.
  • forming an epitaxial layer on the substrate includes sequentially forming an N-type GaN layer, an InGaN or GaN multiple quantum well active layer, and a P-type GaN layer on the substrate.
  • a bottom of the trench is formed in the N-type GaN layer; the N-type electrode is in direct contact with the N-type GaN layer.
  • the LED chip provided by the embodiment of the present invention and the manufacturing method thereof are provided by disposing at least two slots in the LED chip that pass through the transparent electrode layer in the longitudinal direction and the bottom portion is located in the epitaxial layer, wherein the slots are distributed along the edge of the transparent electrode layer, An insulating layer is disposed on the sidewall of the trench and on the transparent electrode layer at the edge of the slot, and an N-type electrode is disposed on the insulating layer and a P-type electrode is disposed on the transparent electrode layer, wherein the P-type electrode is connected to each of the N-type electrodes The distances are equal, so that the N-type electrode to the P-type electrode are equidistant and surround it.
  • the LED chip When the LED chip is operated, the current flow between the N-type electrode and the P-type electrode is relatively dispersed, and the current density distribution can be relatively uniform. Thereby, the luminous efficiency of the LED chip can be improved.
  • FIG. 1 is a cross-sectional view of an LED chip according to a first embodiment of the present invention
  • FIG. 2 is a top plan view of an LED chip according to Embodiment 1 of the present invention.
  • FIG. 3 is a cross-sectional view showing a connection between an LED chip and a circuit board according to Embodiment 1 of the present invention
  • FIG. 4 is a schematic flow chart of a method for fabricating an LED chip according to Embodiment 2 of the present invention.
  • Embodiment 1 of the present invention provides an LED chip.
  • 1 is a schematic cross-sectional view of an LED chip according to a first embodiment of the present invention.
  • the LED chip 10 includes: a substrate 11; an epitaxial layer 12, the epitaxial layer 12 is located on the substrate 11, a transparent electrode layer 13, and the transparent electrode layer 13 is located at the epitaxial layer.
  • the groove is distributed along the edge of the transparent electrode layer 13; the insulating layer 14 is lined on the sidewall of the groove And a transparent electrode layer 13 on the edge of the notch; an N-type electrode 15 on the insulating layer 14; and a P-type electrode 16 on the transparent electrode layer 13 wherein the distance from the P-type electrode 16 to each of the N-type electrodes 15 is equal.
  • the material of the substrate 11 may be sapphire.
  • the "longitudinal direction" passing through the transparent electrode layer 13 in the longitudinal direction is a direction from the transparent electrode layer 13 to the epitaxial layer 12 and perpendicular to the surface of the transparent electrode layer 13.
  • the structure of the LED chip shown in FIG. 1 is only a specific example of the present invention, and the structure of the LED chip is not limited herein.
  • the distance between the N-type electrode 15 and the P-type electrode 16 refers to the distance between the N-type electrode portion and the P-type electrode 16 in the groove because the N-type electrode of the portion is directly connected to the epitaxial layer. 12 contact (since the bottom of the trench is located in the epitaxial layer 12), a voltage difference is formed between the portion of the N-type electrode and the P-type electrode 16 when the LED chip 10 is in operation, thereby enabling the LED chip to emit light. Therefore, the distance between the N-type electrode 15 and the P-type electrode 16 can also be regarded as the distance between the groove and the P-type electrode 16.
  • the N-type electrodes located at the edge of the groove can be used to protect the insulating layer 14, and on the other hand, the N-type electrodes 15 can be electrically connected to each other to provide an operating voltage together during operation.
  • the transparent electrode layer 13 and the epitaxial layer 12 may be etched in the longitudinal direction by an etching process to form a trench, wherein the bottom of the trench is located in the epitaxial layer 12, that is, the trench passes through the transparent electrode layer 13, but is not worn. Over the epitaxial layer 12. And the formed grooves are distributed along the edges of the transparent electrode layer 13.
  • the insulating layer 14 is lined on the sidewall of the trench and on the transparent electrode layer 13 at the edge of the slot and forms an N-type electrode 15 on the insulating layer 14, that is, the N-type electrode 15 corresponds to the slot one by one, that is, the N-type electrode
  • the number of 15 is the same as the number of grooves, so that the N-type electrode 15 is also distributed along the edge of the transparent electrode layer 13, but is electrically insulated from the transparent electrode layer 13 by the insulating layer 14.
  • the material for electrically connecting all of the N-type electrodes 15 is the same as that of the N-type electrode, which simplifies the process flow and reduces the cost.
  • an N-type electrode 15 is formed around the P-type electrode 16 and each of the N-type electrodes 15 to the P-type electrode is formed.
  • the LED chips 10 are equally spaced apart by 16.
  • the number of slots is required to be at least two (as described above, the number of formed N-type electrodes 15 is the same as the number of slots), so that the N-type electrode 15 can well surround P. Type electrode 16.
  • the current flow between the N-type electrode 15 and the P-type electrode 16 is relatively dispersed, thereby avoiding a relatively concentrated current flow between the N-type electrode and the P-type electrode in the prior art, and the current can be made.
  • the density distribution is relatively uniform, so that the luminous efficiency of the LED chip can be improved.
  • the grooves are evenly distributed along the edge of the transparent electrode layer 13.
  • the N-type electrode 15 surrounds the P-type electrode 16 and is uniformly distributed around the P-type electrode 16, so that between the N-type electrode 15 and the P-type electrode 16
  • the current flow is more dispersed, which makes the current density distribution more uniform, so that the luminous efficiency of the LED chip can be better improved.
  • FIG. 2 is a top plan view of an LED chip according to Embodiment 1 of the present invention.
  • the N-type electrode 15 surrounds the P-type electrode 16, and all of the N-type electrodes 15 are electrically connected.
  • FIG. 2 is only one specific example of the LED chip.
  • the shape of the surface of the LED chip shown in FIG. 2 is a square. In actual design, the shape of the surface of the LED chip may also be a rectangle, a circle, a hexagon, or the like.
  • the shape of the P-type electrode 16 is not limited herein as long as the distances from the P-type electrode 16 to the respective N-type electrodes 15 are equal.
  • the slots 2 is eight, and the slots are evenly distributed along the edges of the transparent electrode layer 13.
  • the number of slots may be at least two according to the situation, and the present invention
  • the shape of the surface of the LED chip and the number of slots and the groove along the transparent electrode The distribution of the layer 13 is not limited.
  • the portion between the adjacent N-type electrodes 15 is the same as the material of the N-type electrode and realizes electrical connection between the adjacent N-type electrodes 15. As described above, the portion that electrically connects the N-type electrodes 15 can provide an operating voltage for the N-type electrode 15 more conveniently when the LED chip is in operation.
  • the epitaxial layer 12 includes an N-type GaN layer 121, an InGaN or GaN multiple quantum well active layer 122, and a P-type GaN layer 123, wherein the N-type GaN layer 121 is located on the substrate 11,
  • the InGaN or GaN multiple quantum well active layer 122 is located on the N-type GaN layer 121
  • the P-type GaN layer 123 is located on the InGaN or GaN multiple quantum well active layer 122.
  • the N-type GaN layer 121, the InGaN or GaN multiple quantum well active layer 122, and the P-type GaN layer 123 may be sequentially formed on the substrate 11 by a chemical vapor deposition process.
  • the structure of the epitaxial layer 12 is closely related to the working principle of the LED chip 10.
  • a PN junction is formed between the N-type GaN layer 121 and the P-type GaN layer 123, and the terminal voltage of the PN junction forms a certain barrier, which prevents the N-type GaN layer 121 from being formed. Electrons (majority carriers in the N-type GaN layer 121) diffuse into the P-type GaN layer 123 and holes in the P-type GaN layer 123 (majority carriers in the P-type GaN layer 123) are directed to the N-type GaN layer 121. diffusion.
  • the barrier formed by the PN structure is lowered, and the majority carriers in the N-type GaN layer 121 and the P-type GaN layer 123 are diffused toward each other due to the electron mobility ratio.
  • the mobility of the holes is much larger, so that a large amount of electrons are diffused into the P-type GaN layer 123, constituting the injection of minority carriers in the P-type GaN layer 123.
  • These electrons from the N-type GaN layer 121 are recombined with the holes in the P-type GaN layer 123, and the energy obtained by the recombination is released in the form of light energy, thereby enabling the LED chip 10 to emit light.
  • the bottom of the trench is located in the N-type GaN layer 121; the N-type electrode 15 is in direct contact with the N-type GaN layer 121.
  • the N-type electrode 15 can apply a voltage to the N-type GaN layer 121.
  • the LED chip 10 can operate normally.
  • the groove may have a cross section of one of a circle, a rectangle, and a square.
  • the material of the transparent electrode layer 13 may be ITO (Indium Tin Oxide), ZnO or Ni and Au alloy.
  • the material of the insulating layer 14 may be one of SiO 2 , Si 3 N 4 , and SiON.
  • the materials of the N-type electrode 15 and the P-type electrode 16 may each be one of Ti, Cr, Pt, Au, Ni, Al, Be, and Ge.
  • the number of the slots may be 4, 5, 6, 7, or 8.
  • the P-type electrode 16 is located at the top of the LED chip 10 and has a light blocking effect, light generated in the epitaxial layer 12 of the LED chip 10 is reflected by the P-type electrode 16 and only a small amount of light is emitted from the N-type. A gap between the electrode 15 and the P-type electrode 16 is emitted. Since the substrate 11 and the epitaxial layer 12 are both transparent, the generated light and the light reflected by the P-type electrode 16 can be emitted through the epitaxial layer 12 and the substrate 11 and the bottom of the LED chip 10, and thus, in practical applications, The LED chip 10 in FIG. 1 needs to be inverted, that is, the LED chip 10 needs to adopt a flip-chip structure.
  • FIG. 3 is a cross-sectional view showing the connection of an LED chip and a circuit board according to Embodiment 1 of the present invention.
  • the LED chip 10 is soldered on the circuit board 20 by flip-chip eutectic soldering, wherein the circuit board 20 includes a substrate 21 and a positive electrode 22 and a negative electrode 23 on the substrate 21, and The positive electrode 22 is spaced apart from the negative electrode 23; the P-type electrode 16 of the LED chip 10 is located on the positive electrode 22, and the N-type electrode 15 of the LED chip 10 is located on the negative electrode 23.
  • the LED chip 10 is soldered on the circuit board 20 by a flip-chip eutectic soldering process.
  • the operating voltage can be supplied through the circuit board 20, which can improve the reliability of the LED chip.
  • the LED chip can be soldered to the circuit board including the heat sink by flip-chip eutectic soldering, which can better improve the stability and reliability of the LED chip.
  • the LED chip provided in Embodiment 1 of the present invention has at least two slots disposed in the LED chip through the transparent electrode layer in the longitudinal direction and at the bottom in the epitaxial layer, wherein the slots are distributed along the edge of the transparent electrode layer, on the sidewall of the slot
  • An insulating layer is disposed on the transparent electrode layer at the edge of the notch, and an N-type electrode is disposed on the insulating layer and a P-type electrode is disposed on the transparent electrode layer, wherein the distance between the P-type electrode and each of the N-type electrodes is equal
  • the N-type electrode to the P-type electrode are equidistant and surround the periphery thereof.
  • the LED chip When the LED chip is operated, the current flow between the N-type electrode and the P-type electrode is relatively dispersed, so that the current density distribution is relatively uniform, thereby improving The luminous efficiency of the LED chip; in addition, the LED chip is soldered on the circuit board by flip-chip eutectic soldering, and the reliability of the LED chip can also be improved.
  • Embodiment 2 of the present invention provides a method for fabricating an LED chip.
  • the LED chip described in the first embodiment can be fabricated by the method for fabricating the LED chip in the embodiment, and the manufacturing process is compatible with the existing process.
  • the manufacturing process is compatible with the existing process.
  • FIG. 4 is a schematic flow chart of a method for fabricating an LED chip according to Embodiment 2 of the present invention. As shown in FIG. 4, the manufacturing method of the LED chip of this embodiment includes:
  • Step 301 forming an epitaxial layer on the substrate
  • forming an epitaxial layer on the substrate includes sequentially forming an N-type GaN layer, an InGaN or GaN multiple quantum well active layer, and a P-type GaN layer on the substrate.
  • Step 302 forming a transparent electrode layer on the epitaxial layer
  • Step 303 forming at least two grooves that pass through the transparent electrode layer in the longitudinal direction and have a bottom portion in the epitaxial layer, wherein the grooves are distributed at the edges of the transparent electrode layer;
  • the bottom of the trench is formed in the N-type GaN layer.
  • Step 304 forming an insulating layer on the sidewall of the trench and on the transparent electrode layer at the edge of the slot;
  • Step 305 forming an N-type electrode on the insulating layer
  • the N-type electrode is in direct contact with the N-type GaN layer.
  • Step 306 forming a P-type electrode on the transparent electrode layer, wherein the distance from the P-type electrode to each of the N-type electrodes is equal.
  • a method for fabricating an LED chip according to Embodiment 2 of the present invention wherein at least two grooves are formed in the LED chip through the transparent electrode layer in the longitudinal direction and the bottom portion is located in the epitaxial layer, wherein the grooves are distributed along the edge of the transparent electrode layer, An insulating layer is formed on the sidewall of the trench and on the transparent electrode layer at the edge of the slot, and an N-type electrode is formed on the insulating layer and a P-type electrode is formed on the transparent electrode layer, wherein the P-type electrode is applied to each of the N-type electrodes The distances are equal, so that the N-type electrode to the P-type electrode are equidistant and surround it.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une puce de diode électroluminescente (DEL) et son procédé de fabrication. Le procédé comprend : un substrat (11) ; une couche épitaxiale (12) située sur le substrat (11) ; une couche d'électrode transparente (13) située sur la couche épitaxiale (12) ; au moins deux rainures (A) pénétrant à travers la couche d'électrode transparente (13) le long d'une direction longitudinale, leur fond étant situé dans la couche épitaxiale (12), et agencées le long du bord de la couche d'électrode transparente (13) ; une couche isolante (14), garnissant les parois latérales des rainures et située sur la couche d'électrode transparente (13) au niveau du bord d'une encoche ; une électrode du type N (15) située sur la couche isolante (14) ; et une électrode du type P (16) située sur la couche d'électrode transparente (13), les distances de l'électrode du type P (16) à diverses électrodes du type N (15) étant toutes égales. Au moyen de la présente invention, par disposition d'électrodes du type N d'une puce DEL de façon à entourer une électrode du type P à égales distances, quand la puce DEL fonctionne, des directions de circulation du courant entre les électrodes du type N et l'électrode du type P sont relativement dispersées, ce qui peut rendre relativement uniforme la distribution d'intensité du courant, d'où une amélioration du rendement d'émission de lumière de la puce DEL.
PCT/CN2014/095920 2014-07-28 2014-12-31 Puce del et son procédé de fabrication WO2016015445A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201410362471.7 2014-07-28
CN201410362471.7A CN105449068A (zh) 2014-07-28 2014-07-28 一种led芯片及其制作方法

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WO2016015445A1 true WO2016015445A1 (fr) 2016-02-04

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CN109599465A (zh) 2017-09-30 2019-04-09 展晶科技(深圳)有限公司 发光二极管芯片结构
CN108172568A (zh) * 2017-12-26 2018-06-15 黄星群 一种用于大型电子显示器的led发光体的制备方法
CN108987547A (zh) * 2018-07-20 2018-12-11 扬州乾照光电有限公司 一种发光二极管及其制备方法
CN111477726A (zh) * 2019-05-08 2020-07-31 伊乐视有限公司 用于流体组装的平面表面贴装微型led及其制备方法
CN113130717B (zh) * 2021-04-14 2022-01-25 厦门乾照光电股份有限公司 一种可实现光均匀分布的mini-LED芯片及其制备方法
CN113690348B (zh) * 2021-06-29 2023-02-24 河源市众拓光电科技有限公司 一种用于可见光通信的led器件

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WO2011071100A1 (fr) * 2009-12-11 2011-06-16 昭和電工株式会社 Elément électroluminescent à semi-conducteur, dispositif électroluminescent utilisant ledit élément électroluminescent à semi-conducteur et appareil électronique
CN102931297A (zh) * 2012-11-16 2013-02-13 映瑞光电科技(上海)有限公司 一种led芯片及其制作方法
CN103378255A (zh) * 2012-04-27 2013-10-30 丰田合成株式会社 半导体发光元件

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
WO2011071100A1 (fr) * 2009-12-11 2011-06-16 昭和電工株式会社 Elément électroluminescent à semi-conducteur, dispositif électroluminescent utilisant ledit élément électroluminescent à semi-conducteur et appareil électronique
CN103378255A (zh) * 2012-04-27 2013-10-30 丰田合成株式会社 半导体发光元件
CN102931297A (zh) * 2012-11-16 2013-02-13 映瑞光电科技(上海)有限公司 一种led芯片及其制作方法

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