WO2015198808A1 - Semiconductor device, method for manufacturing semiconductor device, and sensor using semiconductor device - Google Patents

Semiconductor device, method for manufacturing semiconductor device, and sensor using semiconductor device Download PDF

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Publication number
WO2015198808A1
WO2015198808A1 PCT/JP2015/065965 JP2015065965W WO2015198808A1 WO 2015198808 A1 WO2015198808 A1 WO 2015198808A1 JP 2015065965 W JP2015065965 W JP 2015065965W WO 2015198808 A1 WO2015198808 A1 WO 2015198808A1
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WIPO (PCT)
Prior art keywords
adhesive
semiconductor device
semiconductor chip
thin film
substrate
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PCT/JP2015/065965
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French (fr)
Japanese (ja)
Inventor
雄志 金野
菊地　広
聡 池尾
雄治朗 岩本
徳安　昇
Original Assignee
日立オートモティブシステムズ株式会社
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Priority to JP2016529222A priority Critical patent/JP6370379B2/en
Publication of WO2015198808A1 publication Critical patent/WO2015198808A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a semiconductor device in which a semiconductor chip is bonded and fixed to a substrate such as a base, and more particularly to a stacked mounting structure in a semiconductor device, a method for manufacturing the semiconductor device, and a sensor using the same.
  • a semiconductor package as a semiconductor device of this type is often manufactured by a transfer mold method in which a semiconductor chip is mounted on a lead frame and the whole is sealed with a resin.
  • the semiconductor package manufactured by this transfer molding method has a structure in which the periphery of the semiconductor chip is mechanically cut off from the external environment because the periphery of the semiconductor chip is covered with the mold resin.
  • a semiconductor chip When manufacturing an externally exposed semiconductor package as described above, a semiconductor chip may be bonded to a substrate with an adhesive, and then clamped with a mold, and in that state, transfer molding may be performed to form an exposed portion. If the clamping force is excessive at this time, the semiconductor chip is damaged by applying bending stress to the semiconductor chip due to the flow deformation of the adhesive. Further, when the clamping force is too small, there is a problem that the mold resin flows between the mold and the portion to be exposed, and the portion to be exposed covers the mold resin.
  • the present invention has been made in view of such a problem, and an object of the present invention is to prevent an excessive stress from acting on a semiconductor chip when a semiconductor chip having a thin film portion is fixed with an adhesive.
  • An object of the present invention is to provide a semiconductor device capable of preventing breakage of a chip.
  • the present invention provides a semiconductor device having a structure in which excessive stress is not applied to a semiconductor chip even when an externally exposed semiconductor package in which a part of component parts is exposed to the outside from a mold resin is used.
  • a semiconductor device is a semiconductor device in which a semiconductor chip having a thin film portion is fixed to a substrate with an adhesive, and the adhesive is an adhesive having elastic-plastic characteristics. It is characterized by that. Specifically, the adhesive has an elastic property and a plastic property when stress is applied in the compression direction, and the elastic region has a strain in the compression direction within a range of 0.4 to 0.6.
  • the elastic modulus in the compression direction of the elastic characteristics is 50 MPa or more in the above range. That is, a mounting structure using an adhesive having a large elastic modulus in an elastic region in a compression direction at a molding process temperature as an adhesive used immediately below a semiconductor chip.
  • the adhesive for bonding and fixing the semiconductor chip to the substrate since the adhesive for bonding and fixing the semiconductor chip to the substrate has a large elastic modulus in the compression direction at the mode process temperature, excessive stress is applied to the thin film portion of the semiconductor chip.
  • the bending stress applied to the semiconductor chip due to the flow deformation of the adhesive can be prevented, and the semiconductor chip can be prevented from being damaged.
  • the semiconductor device of the present invention can prevent an excessive stress from being applied to the thin film portion of the semiconductor chip, and can prevent the semiconductor chip from being damaged.
  • the semiconductor chip in the molding process of an externally exposed semiconductor package in which a thin film portion is exposed from a mold resin as a sensor portion of a semiconductor chip, even if there is a variation in the height of component parts, the semiconductor chip is not subjected to excessive stress, and the semiconductor The chip can be molded while preventing breakage.
  • FIG. 2 is a stress strain curve diagram in a compression direction of an adhesive used in the semiconductor device of FIG. 1.
  • FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor device of FIG.
  • FIG. 1 is a longitudinal sectional view of the semiconductor device according to the present embodiment
  • FIG. 2 is a stress strain curve diagram of the adhesive used in the semiconductor device of FIG.
  • FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor device of FIG. 1, showing a stacking process and a molding process.
  • the mounting structure of the semiconductor device according to the present invention is to bond and fix to a substrate or the like using an adhesive having a large elastic modulus in the elastic region immediately below the semiconductor chip.
  • FIG. 1 shows a cross section of a mounting structure of a semiconductor device 1 according to the present invention.
  • the semiconductor device 1 according to the present invention includes a lead frame 20 serving as a substrate, an intermediate member 40 bonded and fixed to the upper surface of the lead frame 20 with a second adhesive 30, and an adhesive (first first) on the upper surface of the intermediate member 40.
  • the semiconductor chip 60 having the thin film portion 70 bonded and fixed by the adhesive 50) and the mold resin 10 covering the intermediate member 40 and the semiconductor chip 60.
  • the thin film portion 70 is molded with the mold resin 10 while being exposed outside.
  • the lead frame 20 is formed of a thin metal plate, and has a terminal for supplying power to the semiconductor chip 60, a terminal for inputting a signal to the semiconductor chip 60, an output terminal from the semiconductor chip 60, and the like.
  • An intermediate member 40 made of a wiring board is bonded and fixed using an adhesive 30.
  • the intermediate member 40 is composed of a ceramic substrate or a resin substrate, and a pattern for adhering the semiconductor chip 60 is formed at the center thereof, and the semiconductor chip 60 is adhered to the pattern using the first adhesive 50. Has been.
  • the intermediate member 40 is made of a substrate such as glass or ceramic, has an area larger than the planar shape of the semiconductor chip 60 and a thickness of about 0.05 to 2 mm, and is bonded and fixed to a lead frame 20 as a substrate.
  • the chip 60 functions as a pedestal of the chip 60, and is used to ensure electrical continuity between the semiconductor chip 60 and the lead frame 20.
  • the semiconductor chip 60 is formed of a silicon substrate or the like having a rectangular shape with a planar shape of about 0.5 to 5 mm and a thickness of about 0.05 to 1 mm, on which various circuits such as a detection circuit and an arithmetic circuit are formed, and a thin film A sensor portion such as a diaphragm is formed.
  • the semiconductor device of the present embodiment is used for an airflow sensor installed in an intake system such as an engine, and is formed with various circuits and sensor units for measuring a gas flow rate.
  • a cavity 65 is formed in the lower surface of the thin film portion 70 constituting the diaphragm, and the thin film portion 70 corresponding to the cavity serves as a sensor unit for measuring a gas flow rate or the like.
  • FIG. 2 shows a stress strain curve in the compression direction of an adhesive having physical properties suitable for the first adhesive 50, and the second adhesive 30 is shown as a comparison.
  • the first adhesive 50 has a large elastic modulus in the elastic region in the compression direction at the mode process temperature, and has a strain in the compression direction of 0.4 to 0. . It is desirable to have an elastic region within the range of 6 and have an elastic modulus in the compression region (indicated by the gradient E2) of 50 MPa or more. Further, when the strain in the compression direction is in the range of 0.4 to 0.6 or more, plastic deformation is exhibited, and the stress does not increase even if the strain is increased.
  • the first adhesive 50 is an elastic-plastic body having elastic characteristics and plastic characteristics.
  • the mode process temperature is in the range of 100 to 250 ° C.
  • the first adhesive 50 has a plastic property that can be displaced even after curing.
  • the adhesive 50 that bonds the semiconductor chip 60 is plastically deformed when a stress that enters the plastic region beyond the elastic region in FIG. 2 is applied, but can be further plastically deformed when further stress is applied. It is. Since it has such characteristics, for example, it has a characteristic that it can be further deformed when it is further pressed in a state of being pressed in the compression direction and causing plastic deformation. Further, the portion where the stress at the right end falls in the stress-strain curve of the plastic region in FIG. 2 indicates that the stress remains zero after unloading (the strain does not completely return to the original shape).
  • the second adhesive 30 has a low elastic modulus in the elastic region in the compression direction at the mode process temperature, and the strain in the compression direction is 0.4 to 0. .6 in the elastic region, the elastic modulus in the elastic region (indicated by the gradient E1) is about 20 MPa, and the elastic modulus is smaller at the mode process temperature than the first adhesive 50. It has become a thing.
  • the second adhesive 30 also shows that the stress falls to 0 while the strain remains in the portion where the stress at the right end falls in the stress strain curve of the plastic region in FIG. 2 when unloading.
  • the intermediate member 40 is bonded and fixed on the lead frame 20 with the second adhesive 30, and the intermediate member 40 has a large elastic modulus in the compression direction at the mode process temperature.
  • the laminated structure of these members is placed in the mold die 80, and the thin film portion 70 to be exposed to the outside is clamped by the projecting portion 82 of the mold die 80 or the like. Inject resin.
  • an intermediate member 40 in which an adhesive layer 30 is formed on the lower surface of the lead frame 20 with a second adhesive is brought into contact with the lower surface (
  • the laminated body is formed by bringing the semiconductor chip 60 on which the adhesive layer 50 is formed with the first adhesive into contact with the surface on the intermediate member 40 side. That is, the semiconductor chip is bonded and fixed to the intermediate member 40 using the first adhesive having a large elastic modulus immediately below the semiconductor chip 60.
  • a mold 80 is installed so as to cover the laminate.
  • the mold 80 has a protruding portion 82 that protrudes downward in the space 81.
  • the protrusion 82 has a flat surface at the lower end that comes into contact with the thin film portion 70 of the semiconductor chip 60, and the flat surface contacts the thin film portion 70 to clamp the semiconductor chip 60 as shown in FIG. Yes.
  • the mold 80 covers the semiconductor chip 60 through the space 81.
  • the protrusion 82 that is in contact with and clamps the thin film portion 70 of the semiconductor chip 60 contacts the thin film portion 70 with an appropriate clamping pressure P.
  • the laminate including the semiconductor chip 60 is covered with the mold 80, and the mold resin 80 is injected and filled into the internal space 81 to mold the semiconductor chip 60 except for the thin film portion 70, and the intermediate member 40 is also formed.
  • the intermediate member 40 may not be molded.
  • the lead frame 20, the intermediate member 40, and the semiconductor chip 60 have different dimensions in the height direction, and the first adhesive 50 that bonds and fixes the semiconductor chip 60 has a large elastic modulus even if the height increases or decreases. Therefore, the clamping force (pressing force) does not become excessive. Further, since the pressing force of the projecting portion 82 is appropriate, when the resin is injected into the space 81 of the mold 80, the mold resin does not enter between the projecting portion 82 and the thin film portion 70, and the thin film portion 70. The surface of is not covered with resin. For this reason, when this semiconductor device 1 is used for the sensor which measures the flow volume of gas, a measurement precision can be improved.
  • the mold 80 is shaped so as to cover the laminated body of the lead frame 20, the intermediate member 40, and the semiconductor chip 50 from above.
  • a mold mold having a shape in which the laminated body is sandwiched between the lower mold 85 that covers the lead frame 20 from below can also be used.
  • the first adhesive 50 has a large elastic modulus in the elastic region in the compression direction after curing, in order to mold the mold by absorbing the height variation of the component parts without damaging the thin film portion 70, and Use an adhesive that exhibits plastic deformation.
  • the first adhesive 50 for fixing the semiconductor chip 60 is an elastic-plastic adhesive, has a large elastic modulus in the elastic region in the compression direction after curing, and exhibits plastic deformation. Even if the protruding portion 82 excessively presses the thin film portion 70 due to height variation or the like, that is, even if the clamping force P is excessive, it can be absorbed by the large elasticity of the first adhesive 50. Breakage and the like can be prevented, and damage applied to the thin film portion 70 can be reduced. Further, since the elastic modulus of the first adhesive 50 is large, it is difficult to form a gap between the protruding portion 82 and the thin film portion 70 of the mold 80, and the resin enters between the thin film portion 70 and the protruding portion 82. The thin film portion 70 can be reliably exposed from the mold resin 10.
  • the sensor according to the present invention is a sensor using the semiconductor device 1 described above, and the thin film portion 70 of the semiconductor chip 60 is exposed from the mold resin, the thin film portion 70 forms a diaphragm, and the flow rate of fluid such as gas is controlled. It is to be measured. For example, in a thermal flow sensor, a gas flows along a diaphragm, and the flow rate of the gas is measured by measuring the amount of heat radiated by the flow.
  • the thin film portion 70 exposed from the mold resin is not damaged, there is no residual stress, and the mold resin does not cover the thin film portion, so that accurate measurement is possible.
  • the adhesive when a semiconductor chip having a thin film portion is bonded and fixed to a substrate, the adhesive has elastic-plastic characteristics and uses a material having a large elastic modulus. Other components can be prevented from being damaged, and when the semiconductor device is molded, the exposed thin film portion of the semiconductor chip is not covered with the molding resin and can be easily manufactured.
  • the semiconductor chip 60 is bonded and fixed to the intermediate member 40 using the first adhesive 50 having a large elastic modulus immediately below the semiconductor chip 60, and the intermediate member 40 uses the second adhesive 30. Since the lead frame 20 is bonded and fixed, two types of adhesives can be used in accordance with the function. Further, although an example in which two types of adhesives are used has been shown, it goes without saying that the first adhesive may also be used for bonding between the intermediate member 40 and the lead frame 20. In this case, since the elastic modulus of both of the adhesives used for the two layers is large, dimensional variations in the height direction can be absorbed.
  • the present invention is also applied to a two-layer structure without an intermediate member.
  • the present invention can also be applied to a multilayer structure.
  • the present invention is not limited to the above-described embodiments, and various designs can be made without departing from the spirit of the present invention described in the claims. It can be changed.
  • an example of a lead frame is shown as an example of the substrate, the present invention is not limited to this, and an appropriate substrate such as a plate-shaped ceramic substrate or a resin substrate can be used.
  • a part of the configuration of a certain embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of a certain embodiment. Furthermore, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment.
  • the present invention can be applied to various sensors using this semiconductor device.
  • it can also be applied to the use of a sensor in which a part of a semiconductor chip such as a pressure sensor and a humidity sensor is exposed from a mold resin.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Measuring Volume Flow (AREA)
  • Die Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Pressure Sensors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

Provided is a mounting structure which, even if there are variations, for example, based on tolerance in the height of a component part when an externally exposed semiconductor device in which part of the component part is exposed to the outside from a molding resin is manufactured, is able to easily prevent the component part from being broken in a molding step. In a semiconductor device (1), a semiconductor chip (60) having a thin film part is secured to a lead frame (substrate) (20) by an adhesive (50), and the adhesive is an adhesive having an elasto-plastic property. More specifically, the adhesive has an elastic property and a plastic property when stress is applied in a compression direction, and has an elastic area when strain in the compression direction is in the range of 0.4-0.6, the modulus of elasticity in the compression direction of the elastic property is 50 MPa or more in the abovementioned range, and the adhesive has the plastic property when the strain in the compression direction becomes greater than or equal to the range of 0.4-0.6.

Description

半導体装置、該半導体装置の製造方法及び該半導体装置を用いたセンサSemiconductor device, method for manufacturing the semiconductor device, and sensor using the semiconductor device
　本発明は、半導体チップをベース等の基板に接着固定した半導体装置に係り、特に、半導体装置内の積層実装構造と半導体装置の製造方法及びこれを用いたセンサに関する。 The present invention relates to a semiconductor device in which a semiconductor chip is bonded and fixed to a substrate such as a base, and more particularly to a stacked mounting structure in a semiconductor device, a method for manufacturing the semiconductor device, and a sensor using the same.
　従来、この種の半導体装置としての半導体パッケージは、リードフレーム上に半導体チップを搭載し、全体を樹脂で封止するトランスファーモールド法により製造される場合が多い。このトランスファーモールド法により製造された半導体パッケージは、半導体チップの周囲がモールド樹脂で覆われるため、外部環境から機械的に遮断された構造となっている。 Conventionally, a semiconductor package as a semiconductor device of this type is often manufactured by a transfer mold method in which a semiconductor chip is mounted on a lead frame and the whole is sealed with a resin. The semiconductor package manufactured by this transfer molding method has a structure in which the periphery of the semiconductor chip is mechanically cut off from the external environment because the periphery of the semiconductor chip is covered with the mold resin.
　近年、モールド樹脂の一部を開口し、従来はモールド樹脂内に覆われていた半導体チップやリードフレームや放熱部品等を外部環境に露出する、外部露出型の半導体パッケージが使われるようになっている。例えば、特許文献１に記載されている外部露出型の半導体パッケージは、放熱板の一部をパッケージ外部に露出することにより、半導体チップの発生する熱を低熱抵抗で外部に放熱する効果を発揮している。また、同様に、半導体センサ等の一部をパッケージ外部に露出させるチップ露出型半導体パッケージにおいて、半導体チップを破損させることなく半導体パッケージを製造できる半導体チップ封止用離型フィルムもある（例えば、特許文献２参照）。 In recent years, externally exposed semiconductor packages have been used in which a part of the mold resin is opened to expose the semiconductor chip, lead frame, heat dissipation component, etc. that were previously covered in the mold resin to the external environment. Yes. For example, the externally exposed semiconductor package described in Patent Document 1 exhibits the effect of radiating the heat generated by the semiconductor chip to the outside with a low thermal resistance by exposing a part of the heat radiating plate to the outside of the package. ing. Similarly, in a chip-exposed semiconductor package in which a part of a semiconductor sensor or the like is exposed to the outside of the package, there is a release film for sealing a semiconductor chip that can manufacture the semiconductor package without damaging the semiconductor chip (for example, patents) Reference 2).
特開２０１２－１５２２５号公報JP 2012-15225 A 特開２００６－４９８５０号公報JP 2006-49850 A
　前記した外部露出型の半導体パッケージを製造する場合、半導体チップを基板上に接着剤で接着した後、モールド金型でクランプし、その状態でトランスファーモールドを行って露出部を形成させる場合がある。このときクランプ力が過大だと、接着剤の流動変形に伴う半導体チップへの曲げ応力印加により、半導体チップが破損する。また、クランプ力が過小の場合にはモールド金型と露出したい部分との間にモールド樹脂が流れ込み、露出したい部分にモールド樹脂が被さってしまう問題点がある。 When manufacturing an externally exposed semiconductor package as described above, a semiconductor chip may be bonded to a substrate with an adhesive, and then clamped with a mold, and in that state, transfer molding may be performed to form an exposed portion. If the clamping force is excessive at this time, the semiconductor chip is damaged by applying bending stress to the semiconductor chip due to the flow deformation of the adhesive. Further, when the clamping force is too small, there is a problem that the mold resin flows between the mold and the portion to be exposed, and the portion to be exposed covers the mold resin.
　本発明は、このような問題に鑑みてなされたものであって、その目的とするところは、薄膜部を持つ半導体チップを接着剤で固定するとき、半導体チップに過大な応力が作用せず半導体チップの破損を防止できる半導体装置を提供することにある。特に、構成部品の一部がモールド樹脂から外部に露出する外部露出型半導体パッケージを用いても、半導体チップに過度な応力がかからない構造の半導体装置を提供するものである。 The present invention has been made in view of such a problem, and an object of the present invention is to prevent an excessive stress from acting on a semiconductor chip when a semiconductor chip having a thin film portion is fixed with an adhesive. An object of the present invention is to provide a semiconductor device capable of preventing breakage of a chip. In particular, the present invention provides a semiconductor device having a structure in which excessive stress is not applied to a semiconductor chip even when an externally exposed semiconductor package in which a part of component parts is exposed to the outside from a mold resin is used.
　前記目的を達成すべく、本発明に係る半導体装置は、基板に、薄膜部を持つ半導体チップを接着剤で固定した半導体装置であって、前記接着剤は、弾塑性特性を有する接着剤であることを特徴としている。具体的には、前記接着剤は、圧縮方向に応力を加えたとき、弾性特性と塑性特性とを有するものであり、圧縮方向の歪が０．４～０．６の範囲以内で弾性領域を持ち、弾性特性の圧縮方向の弾性率は、前記の範囲で５０ＭＰａ以上である。すなわち、半導体チップ直下に使用する接着剤として、モールドプロセス温度において圧縮方向の弾性領域の弾性率が大きいもの用いた実装構造としている。 In order to achieve the above object, a semiconductor device according to the present invention is a semiconductor device in which a semiconductor chip having a thin film portion is fixed to a substrate with an adhesive, and the adhesive is an adhesive having elastic-plastic characteristics. It is characterized by that. Specifically, the adhesive has an elastic property and a plastic property when stress is applied in the compression direction, and the elastic region has a strain in the compression direction within a range of 0.4 to 0.6. The elastic modulus in the compression direction of the elastic characteristics is 50 MPa or more in the above range. That is, a mounting structure using an adhesive having a large elastic modulus in an elastic region in a compression direction at a molding process temperature as an adhesive used immediately below a semiconductor chip.
　前記のごとく構成された本発明の半導体装置では、半導体チップを基板に接着固定する接着剤は、モードプロセス温度において圧縮方向の弾性率が大きいため、半導体チップの薄膜部に過大な応力が加わることを防止でき、接着剤の流動変形に伴う半導体チップへの曲げ応力印加を防止でき、半導体チップの破損を防止することができる。 In the semiconductor device of the present invention configured as described above, since the adhesive for bonding and fixing the semiconductor chip to the substrate has a large elastic modulus in the compression direction at the mode process temperature, excessive stress is applied to the thin film portion of the semiconductor chip. The bending stress applied to the semiconductor chip due to the flow deformation of the adhesive can be prevented, and the semiconductor chip can be prevented from being damaged.
　本発明の半導体装置は、半導体チップの薄膜部に過大な応力が加わることを防止でき、半導体チップの破損を防止することができる。特に、半導体チップのセンサ部として薄膜部をモールド樹脂から露出させる外部露出型の半導体パッケージのモールド工程において
、構成部品の高さばらつきがある場合でも、半導体チップに過度な応力がかからず、半導体チップの破損を防止して成型することが可能となる。 The semiconductor device of the present invention can prevent an excessive stress from being applied to the thin film portion of the semiconductor chip, and can prevent the semiconductor chip from being damaged. In particular, in the molding process of an externally exposed semiconductor package in which a thin film portion is exposed from a mold resin as a sensor portion of a semiconductor chip, even if there is a variation in the height of component parts, the semiconductor chip is not subjected to excessive stress, and the semiconductor The chip can be molded while preventing breakage.
本発明に係る半導体装置の一実施形態の実装構造を示す断面図。Sectional drawing which shows the mounting structure of one Embodiment of the semiconductor device which concerns on this invention. 図１の半導体装置に用いる接着剤の圧縮方向の応力歪曲線図。FIG. 2 is a stress strain curve diagram in a compression direction of an adhesive used in the semiconductor device of FIG. 1. 図１の半導体装置の製造工程を示す断面図。FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor device of FIG.
　以下、本発明に係る半導体装置の一実施形態を図面に基づき詳細に説明する。図１は本実施形態に係る半導体装置の縦方向の断面図、図２は図１の半導体装置に用いる接着剤の圧縮方向の応力歪曲線図で圧縮方向の弾性率を示しており、図３は図１の半導体装置の製造工程を示す断面図で、積層工程、モールド工程を示している。 Hereinafter, an embodiment of a semiconductor device according to the present invention will be described in detail with reference to the drawings. 1 is a longitudinal sectional view of the semiconductor device according to the present embodiment, and FIG. 2 is a stress strain curve diagram of the adhesive used in the semiconductor device of FIG. FIG. 2 is a cross-sectional view showing a manufacturing process of the semiconductor device of FIG. 1, showing a stacking process and a molding process.
　本発明による半導体装置の実装構造は、半導体チップ直下に弾性領域の弾性率が大きい接着剤を使用して基板等に接着固定するものである。 The mounting structure of the semiconductor device according to the present invention is to bond and fix to a substrate or the like using an adhesive having a large elastic modulus in the elastic region immediately below the semiconductor chip.
　図１に、本発明に係る半導体装置１の実装構造の断面を示す。本発明に係る半導体装置１は、基板となるリードフレーム２０と、リードフレーム２０の上面に第２の接着剤３０で接着固定された中間部材４０と、中間部材４０の上面に接着剤（第１の接着剤）５０で接着固定された薄膜部７０を持つ半導体チップ６０と、中間部材４０と半導体チップ６０を覆うモールド樹脂１０から成る。なお、薄膜部７０は、外部露出させたままモールド樹脂１０でモールドされている。 FIG. 1 shows a cross section of a mounting structure of a semiconductor device 1 according to the present invention. The semiconductor device 1 according to the present invention includes a lead frame 20 serving as a substrate, an intermediate member 40 bonded and fixed to the upper surface of the lead frame 20 with a second adhesive 30, and an adhesive (first first) on the upper surface of the intermediate member 40. The semiconductor chip 60 having the thin film portion 70 bonded and fixed by the adhesive 50) and the mold resin 10 covering the intermediate member 40 and the semiconductor chip 60. The thin film portion 70 is molded with the mold resin 10 while being exposed outside.
　リードフレーム２０は金属薄板で形成され、半導体チップ６０に電源を供給する端子、半導体チップ６０に信号を入力する端子、半導体チップ６０からの出力端子等が形成され
、その中心部には第２の接着剤３０を用いて配線基板からなる中間部材４０が接着固定されている。中間部材４０はセラミック製基板や樹脂製基板から構成され、その中心部には
、半導体チップ６０を接着するパターンが形成され、このパターン上に第１の接着剤５０を用いて半導体チップ６０が接着されている。 The lead frame 20 is formed of a thin metal plate, and has a terminal for supplying power to the semiconductor chip 60, a terminal for inputting a signal to the semiconductor chip 60, an output terminal from the semiconductor chip 60, and the like. An intermediate member 40 made of a wiring board is bonded and fixed using an adhesive 30. The intermediate member 40 is composed of a ceramic substrate or a resin substrate, and a pattern for adhering the semiconductor chip 60 is formed at the center thereof, and the semiconductor chip 60 is adhered to the pattern using the first adhesive 50. Has been.
　中間部材４０は例えばガラス、セラミック等の基板で構成され、半導体チップ６０の平面形状より大きい面積で厚さが０．０５～２ｍｍ程度に設定され、基板としてのリードフレーム２０に接着固定されて半導体チップ６０の台座として機能すると共に、半導体チップ６０とリードフレーム２０との導通を確保するためのものであり、上下の面に形成された導電パターンと、これらの導電パターンを導通させるスルーホール等で形成されている
。 The intermediate member 40 is made of a substrate such as glass or ceramic, has an area larger than the planar shape of the semiconductor chip 60 and a thickness of about 0.05 to 2 mm, and is bonded and fixed to a lead frame 20 as a substrate. The chip 60 functions as a pedestal of the chip 60, and is used to ensure electrical continuity between the semiconductor chip 60 and the lead frame 20. The conductive patterns formed on the upper and lower surfaces and the through holes that conduct these conductive patterns. Is formed.
　半導体チップ６０は平面形状が０．５～５ｍｍ程度の矩形で厚さが０．０５～１ｍｍ程度のシリコン基板等で形成され、検出回路、演算回路等の各種の回路が形成されると共に
、薄膜のダイアフラム等のセンサ部が形成されている。本実施の形態の半導体装置は、エンジン等の吸気系に設置されるエアフロセンサに使用されるものであり、気体の流量を測定するための各種回路やセンサ部が形成されている。ダイアフラムを構成する薄膜部７０の下面には空洞６５が形成され、この空洞に対応する薄膜部７０が気体の流量等を測定するセンサ部となっている。 The semiconductor chip 60 is formed of a silicon substrate or the like having a rectangular shape with a planar shape of about 0.5 to 5 mm and a thickness of about 0.05 to 1 mm, on which various circuits such as a detection circuit and an arithmetic circuit are formed, and a thin film A sensor portion such as a diaphragm is formed. The semiconductor device of the present embodiment is used for an airflow sensor installed in an intake system such as an engine, and is formed with various circuits and sensor units for measuring a gas flow rate. A cavity 65 is formed in the lower surface of the thin film portion 70 constituting the diaphragm, and the thin film portion 70 corresponding to the cavity serves as a sensor unit for measuring a gas flow rate or the like.
　ここで、前記した第２の接着剤３０及び第１の接着剤５０について詳細に説明する。図２に、第１の接着剤５０に適した物性を持つ接着剤の圧縮方向の応力歪曲線を示すと共に
、第２の接着剤３０を比較として示している。第１の接着剤５０は、モードプロセス温度において、圧縮方向の弾性領域の弾性率が大きいものであり、圧縮方向の歪が０．４～０
．６の範囲以内で弾性領域を持ち、弾性領域における圧縮方向弾性率（勾配Ｅ２で示す）が５０ＭＰａ以上のものが望ましい。また、圧縮方向の歪が０．４～０．６の範囲以上になると塑性変形を示し、歪を増加させても応力が増加しない。塑性変形領域まで変形後は
、応力を除去しても元の形に戻らない。つまり、第１の接着剤５０は弾性特性と塑性特性を有する弾塑性体である。なお、本実施形態のモードプロセス温度は１００～２５０℃の範囲である。 Here, the above-described second adhesive 30 and first adhesive 50 will be described in detail. FIG. 2 shows a stress strain curve in the compression direction of an adhesive having physical properties suitable for the first adhesive 50, and the second adhesive 30 is shown as a comparison. The first adhesive 50 has a large elastic modulus in the elastic region in the compression direction at the mode process temperature, and has a strain in the compression direction of 0.4 to 0.
. It is desirable to have an elastic region within the range of 6 and have an elastic modulus in the compression region (indicated by the gradient E2) of 50 MPa or more. Further, when the strain in the compression direction is in the range of 0.4 to 0.6 or more, plastic deformation is exhibited, and the stress does not increase even if the strain is increased. After deformation to the plastic deformation region, it does not return to its original shape even if the stress is removed. That is, the first adhesive 50 is an elastic-plastic body having elastic characteristics and plastic characteristics. In this embodiment, the mode process temperature is in the range of 100 to 250 ° C.
　前記第１の接着剤５０は、硬化後においても変位可能な塑性特性を有するものである。すなわち、半導体チップ６０を接着する接着剤５０は、図２において弾性領域を超えて塑性領域に入る応力が加わった場合に塑性変形するが、さらに応力が加わるとさらに塑性変形することができる接着剤である。このような特性を有するため、例えば圧縮方向に押圧され塑性変形を起こした状態で、さらに押圧された場合に、さらに変形できる特性を有している。また、図２の塑性領域の応力歪曲線で右端の応力が落ち込む部位は、除荷すると歪が残ったまま（元の形状に完全に戻らず）、応力が０となることを示している。 The first adhesive 50 has a plastic property that can be displaced even after curing. In other words, the adhesive 50 that bonds the semiconductor chip 60 is plastically deformed when a stress that enters the plastic region beyond the elastic region in FIG. 2 is applied, but can be further plastically deformed when further stress is applied. It is. Since it has such characteristics, for example, it has a characteristic that it can be further deformed when it is further pressed in a state of being pressed in the compression direction and causing plastic deformation. Further, the portion where the stress at the right end falls in the stress-strain curve of the plastic region in FIG. 2 indicates that the stress remains zero after unloading (the strain does not completely return to the original shape).
　これに対して、第２の接着剤３０は図２に破線で示すように、モードプロセス温度において、圧縮方向の弾性領域の弾性率が小さいものであり、圧縮方向の歪が０．４～０．６の範囲まで弾性領域を持ち、弾性領域における圧縮方向弾性率（勾配Ｅ１で示す）が２０ＭＰａ程度となっており、第１の接着剤５０と比較してモードプロセス温度において、弾性率が小さいものとなっている。また、第２の接着剤３０も、図２の塑性領域の応力歪曲線で右端の応力が落ち込む部位は、除荷すると歪が残ったまま、応力が０となることを示している。 On the other hand, as shown by the broken line in FIG. 2, the second adhesive 30 has a low elastic modulus in the elastic region in the compression direction at the mode process temperature, and the strain in the compression direction is 0.4 to 0. .6 in the elastic region, the elastic modulus in the elastic region (indicated by the gradient E1) is about 20 MPa, and the elastic modulus is smaller at the mode process temperature than the first adhesive 50. It has become a thing. In addition, the second adhesive 30 also shows that the stress falls to 0 while the strain remains in the portion where the stress at the right end falls in the stress strain curve of the plastic region in FIG. 2 when unloading.
　このように、第２の接着剤３０でリードフレーム２０上に中間部材４０を接着固定し、モードプロセス温度において、圧縮方向の弾性率の大きい特性を有する、第１の接着剤５０で中間部材４０上に半導体チップ６０を接着した後、これらの部材の積層構造体をモールド金型８０内に設置し、外部露出させたい薄膜部７０をモールド金型８０の突出部８２等でクランプした状態でモールド樹脂を注入する。 In this way, the intermediate member 40 is bonded and fixed on the lead frame 20 with the second adhesive 30, and the intermediate member 40 has a large elastic modulus in the compression direction at the mode process temperature. After the semiconductor chip 60 is bonded on top, the laminated structure of these members is placed in the mold die 80, and the thin film portion 70 to be exposed to the outside is clamped by the projecting portion 82 of the mold die 80 or the like. Inject resin.
　具体的には、図３（ａ）に示すように、リードフレーム２０上に、下面に第２の接着剤で接着層３０を形成した中間部材４０を接触させ、中間部材４０上に、下面（中間部材４０側の面）に第１の接着剤で接着層５０を形成した半導体チップ６０を接触させて積層体を形成する。すなわち、半導体チップ６０の直下に、弾性率の大きい第１の接着剤を使用して中間部材４０に半導体チップを接着固定している。 Specifically, as shown in FIG. 3A, an intermediate member 40 in which an adhesive layer 30 is formed on the lower surface of the lead frame 20 with a second adhesive is brought into contact with the lower surface ( The laminated body is formed by bringing the semiconductor chip 60 on which the adhesive layer 50 is formed with the first adhesive into contact with the surface on the intermediate member 40 side. That is, the semiconductor chip is bonded and fixed to the intermediate member 40 using the first adhesive having a large elastic modulus immediately below the semiconductor chip 60.
　この後、図３（ｂ）に示すように積層体を覆うようにモールド型８０を設置する。モールド型８０には空間８１内に下方に向けて突出する突出部８２が形成されている。突出部８２は半導体チップ６０の薄膜部７０と接触する平坦面が下端に形成され、この平坦面が図３（ｃ）に示すように、薄膜部７０に接触して半導体チップ６０をクランプしている。そして、モールド型８０は空間８１を介して半導体チップ６０を覆っている。半導体チップ６０の薄膜部７０と接触してクランプしている突出部８２は薄膜部７０に適正なクランプ圧力Ｐで接触する。このように、半導体チップ６０を備える積層体をモールド型８０で覆い、内部の空間８１にモールド樹脂を注入、充填することで薄膜部７０を除いて半導体チップ６０をモールドすると共に、中間部材４０もモールドすることができる。なお、中間部材４０の部分はモールドしないようにしてもよい。 Thereafter, as shown in FIG. 3B, a mold 80 is installed so as to cover the laminate. The mold 80 has a protruding portion 82 that protrudes downward in the space 81. The protrusion 82 has a flat surface at the lower end that comes into contact with the thin film portion 70 of the semiconductor chip 60, and the flat surface contacts the thin film portion 70 to clamp the semiconductor chip 60 as shown in FIG. Yes. The mold 80 covers the semiconductor chip 60 through the space 81. The protrusion 82 that is in contact with and clamps the thin film portion 70 of the semiconductor chip 60 contacts the thin film portion 70 with an appropriate clamping pressure P. In this way, the laminate including the semiconductor chip 60 is covered with the mold 80, and the mold resin 80 is injected and filled into the internal space 81 to mold the semiconductor chip 60 except for the thin film portion 70, and the intermediate member 40 is also formed. Can be molded. The intermediate member 40 may not be molded.
　すなわち、リードフレーム２０、中間部材４０、半導体チップ６０の高さ方向の寸法にばらつきがあり、高さが増減しても、半導体チップ６０を接着固定する第１の接着剤５０は弾性率が大きいため、クランプ力（押圧力）が過大とならない。また、突出部８２の押圧力が適正であるため、モールド金型８０の空間８１に樹脂を注入する際に、突出部８２と薄膜部７０との間にモールド樹脂が進入せず、薄膜部７０の表面が樹脂で覆われることがない。このため、この半導体装置１を気体の流量を測定するセンサに使用したとき、測定精度を向上させることができる。 That is, the lead frame 20, the intermediate member 40, and the semiconductor chip 60 have different dimensions in the height direction, and the first adhesive 50 that bonds and fixes the semiconductor chip 60 has a large elastic modulus even if the height increases or decreases. Therefore, the clamping force (pressing force) does not become excessive. Further, since the pressing force of the projecting portion 82 is appropriate, when the resin is injected into the space 81 of the mold 80, the mold resin does not enter between the projecting portion 82 and the thin film portion 70, and the thin film portion 70. The surface of is not covered with resin. For this reason, when this semiconductor device 1 is used for the sensor which measures the flow volume of gas, a measurement precision can be improved.
　なお、モールド型８０はリードフレーム２０、中間部材４０、半導体チップ５０の積層体を上方から覆う形状のものを使用したが、図３（ｃ）に示すように、上方から覆う形状の上型８０と、下方からリードフレーム２０を覆う下型８５とで、積層体を挟み込む形状のモールド型を使用することもできる。 The mold 80 is shaped so as to cover the laminated body of the lead frame 20, the intermediate member 40, and the semiconductor chip 50 from above. However, as shown in FIG. Alternatively, a mold mold having a shape in which the laminated body is sandwiched between the lower mold 85 that covers the lead frame 20 from below can also be used.
　薄膜部７０をモールド金型８０等でクランプする際に、クランプ力Ｐが過大だと、モールド型８０の突出部８２が薄膜部７０を過度に押圧し、第１の接着剤５０が流動を伴う塑性変形を起こし、半導体チップ６０に曲げ応力がかかる結果、薄膜部７０にダメージが発生する。薄膜部７０にダメージを与えず、かつ構成部品の高さばらつきを吸収してモールド成型するためには、第１の接着剤５０に、硬化後の圧縮方向の弾性領域の弾性率が大きく、かつ塑性変形を示す接着剤を使用する。 When the thin film portion 70 is clamped with the mold 80 or the like, if the clamping force P is excessive, the protruding portion 82 of the mold 80 excessively presses the thin film portion 70 and the first adhesive 50 is flowed. As a result of causing plastic deformation and applying bending stress to the semiconductor chip 60, damage to the thin film portion 70 occurs. The first adhesive 50 has a large elastic modulus in the elastic region in the compression direction after curing, in order to mold the mold by absorbing the height variation of the component parts without damaging the thin film portion 70, and Use an adhesive that exhibits plastic deformation.
　なお、このような挙動を示す第１の接着剤５０としては、エポキシ樹脂とアクリル樹脂を使用したものなどが挙げられる。 In addition, as the 1st adhesive agent 50 which shows such a behavior, the thing using an epoxy resin and an acrylic resin etc. are mentioned.
　このように、半導体チップ６０を固定する第１の接着剤５０が弾塑性を有する接着剤であり、硬化後の圧縮方向の弾性領域の弾性率が大きく、かつ塑性変形を示すため、構成部品の高さばらつき等により突出部８２が薄膜部７０を過度に押し付けても、すなわちクランプ力Ｐが過大であっても、第１の接着剤５０の大きな弾性により吸収することができ、薄膜部７０の破損等を防止できると共に、薄膜部７０に加わるダメージを低減できる。また、第１の接着剤５０の弾性率が大きいため、モールド型８０の突出部８２と薄膜部７０との間に隙間ができにくく、薄膜部７０と突出部８２との間に樹脂が入り込むことがなくなり、薄膜部７０を確実にモールド樹脂１０から露出させることができる。 As described above, the first adhesive 50 for fixing the semiconductor chip 60 is an elastic-plastic adhesive, has a large elastic modulus in the elastic region in the compression direction after curing, and exhibits plastic deformation. Even if the protruding portion 82 excessively presses the thin film portion 70 due to height variation or the like, that is, even if the clamping force P is excessive, it can be absorbed by the large elasticity of the first adhesive 50. Breakage and the like can be prevented, and damage applied to the thin film portion 70 can be reduced. Further, since the elastic modulus of the first adhesive 50 is large, it is difficult to form a gap between the protruding portion 82 and the thin film portion 70 of the mold 80, and the resin enters between the thin film portion 70 and the protruding portion 82. The thin film portion 70 can be reliably exposed from the mold resin 10.
　本発明に係るセンサは、前記した半導体装置１を用いたセンサであり、半導体チップ６０の薄膜部７０がモールド樹脂から露出され、この薄膜部７０がダイアフラムを形成し、気体等の流体の流量を計測するものである。例えば熱式の流量センサでは、ダイアフラムに沿って気体が流れ、流れによって放熱される熱量を測定することで気体の流量を計測するものである。本実施形態の半導体装置１では、モールド樹脂から露出している薄膜部７０は破損がなく、残留応力もなく、モールド樹脂が薄膜部に被ることがないため、正確な計測が可能となる。 The sensor according to the present invention is a sensor using the semiconductor device 1 described above, and the thin film portion 70 of the semiconductor chip 60 is exposed from the mold resin, the thin film portion 70 forms a diaphragm, and the flow rate of fluid such as gas is controlled. It is to be measured. For example, in a thermal flow sensor, a gas flows along a diaphragm, and the flow rate of the gas is measured by measuring the amount of heat radiated by the flow. In the semiconductor device 1 of the present embodiment, the thin film portion 70 exposed from the mold resin is not damaged, there is no residual stress, and the mold resin does not cover the thin film portion, so that accurate measurement is possible.
　本発明に係る半導体装置の製造方法では、薄膜部を有する半導体チップを基板に接着固定する際、接着剤は弾塑性特性を有するものであり、弾性率が大きいものを使用するため
、半導体チップや他の構成部品の破損を防止でき、半導体装置をモールドする際に半導体チップの露出している薄膜部はモールド樹脂で覆われることがなく、容易に製造することができる。 In the method of manufacturing a semiconductor device according to the present invention, when a semiconductor chip having a thin film portion is bonded and fixed to a substrate, the adhesive has elastic-plastic characteristics and uses a material having a large elastic modulus. Other components can be prevented from being damaged, and when the semiconductor device is molded, the exposed thin film portion of the semiconductor chip is not covered with the molding resin and can be easily manufactured.
　前記の実施形態では、半導体チップ６０の直下に弾性率の大きい第１の接着剤５０を用いて半導体チップ６０を中間部材４０に接着固定し、中間部材４０は第２の接着剤３０を用いてリードフレーム２０に接着固定するため、２種類の接着剤を機能に合わせて使用することができる。また、２種類の接着剤を使用する例を示したが、中間部材４０とリードフレーム２０との接着にも第１の接着剤を用いてもよいことは勿論である。この場合は、２層に用いた接着剤の両方の弾性率が大きいため、より高さ方向の寸法ばらつきを吸収することができる。 In the above-described embodiment, the semiconductor chip 60 is bonded and fixed to the intermediate member 40 using the first adhesive 50 having a large elastic modulus immediately below the semiconductor chip 60, and the intermediate member 40 uses the second adhesive 30. Since the lead frame 20 is bonded and fixed, two types of adhesives can be used in accordance with the function. Further, although an example in which two types of adhesives are used has been shown, it goes without saying that the first adhesive may also be used for bonding between the intermediate member 40 and the lead frame 20. In this case, since the elastic modulus of both of the adhesives used for the two layers is large, dimensional variations in the height direction can be absorbed.
　また、本実施の形態では、基板としてのリードフレーム２０と、中間部材４０と、半導体チップ６０の３層構造の例について示したが、中間部材のない２層構造の場合にも本発明を適用できるものであり、さらに多層の構造の場合にも本発明を適用できることは勿論である。 In the present embodiment, an example of the three-layer structure of the lead frame 20, the intermediate member 40, and the semiconductor chip 60 as a substrate has been described. However, the present invention is also applied to a two-layer structure without an intermediate member. Of course, the present invention can also be applied to a multilayer structure.
　以上、本発明の実施形態について詳述したが、本発明は、前記の実施形態に限定されるものではなく、特許請求の範囲に記載された本発明の精神を逸脱しない範囲で、種々の設計変更を行うことができるものである。例えば、基板の一例としてリードフレームの例を示したが、これに限られるものでなく、板状のセラミック基板、樹脂製の基板等、適宜のものを用いることができる。 Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments, and various designs can be made without departing from the spirit of the present invention described in the claims. It can be changed. For example, although an example of a lead frame is shown as an example of the substrate, the present invention is not limited to this, and an appropriate substrate such as a plate-shaped ceramic substrate or a resin substrate can be used.
　また、ある実施例の構成の一部を他の実施例の構成に置き換えることが可能であり、ある実施例の構成に他の実施例の構成を加えることも可能である。さらに、各実施例の構成の一部について、他の構成の追加・削除・置換をすることが可能である。 Further, a part of the configuration of a certain embodiment can be replaced with the configuration of another embodiment, and the configuration of another embodiment can be added to the configuration of a certain embodiment. Furthermore, it is possible to add, delete, and replace other configurations for a part of the configuration of each embodiment.
　本発明の活用例として、この半導体装置を用いて各種のセンサに適用することができ、例えば圧力センサ、湿度センサ等の半導体チップの一部をモールド樹脂から露出したセンサの用途にも適用できる。 As an application example of the present invention, the present invention can be applied to various sensors using this semiconductor device. For example, it can also be applied to the use of a sensor in which a part of a semiconductor chip such as a pressure sensor and a humidity sensor is exposed from a mold resin.
　１：半導体装置、１０：モールド樹脂、２０：リードフレーム（基板）、３０：第２の
接着剤、４０：中間部材、５０：接着剤（第１の接着剤）、６０：半導体チップ、７０：
薄膜部、８０：モールド型、８１：空間、８２：突出部（クランプ部）、Ｐ：クランプ力 1: Semiconductor device, 10: Mold resin, 20: Lead frame (substrate), 30: Second adhesive, 40: Intermediate member, 50: Adhesive (first adhesive), 60: Semiconductor chip, 70:
Thin film part, 80: mold, 81: space, 82: protrusion (clamp part), P: clamping force

Claims (8)

  1. 　基板に、薄膜部を持つ半導体チップを接着剤で固定した半導体装置であって、
    　前記接着剤は、弾塑性特性を有する接着剤であることを特徴とする半導体装置。     A semiconductor device in which a semiconductor chip having a thin film portion is fixed to a substrate with an adhesive,
    The semiconductor device is characterized in that the adhesive is an adhesive having elastic-plastic characteristics.
  2. 　前記接着剤は、圧縮方向に応力を加えたとき、弾性特性と塑性特性とを有するものであり、圧縮方向の歪が０．４～０．６の範囲以内で弾性領域を持ち、
    　前記弾性特性の圧縮方向の弾性率は、前記の範囲で５０ＭＰａ以上であることを特徴とする請求項１に記載の半導体装置。     The adhesive has an elastic property and a plastic property when stress is applied in the compression direction, and has an elastic region with a strain in the compression direction within a range of 0.4 to 0.6,
    2. The semiconductor device according to claim 1, wherein an elastic modulus in the compression direction of the elastic characteristic is 50 MPa or more in the range.
  3. 　前記接着剤は、圧縮方向の歪が０．４～０．６の範囲以上では塑性特性を有することを特徴とする請求項２に記載の半導体装置。 3. The semiconductor device according to claim 2, wherein the adhesive has plastic properties when the strain in the compression direction is in a range of 0.4 to 0.6 or more.
  4. 　前記接着剤は、硬化後においても変位可能な塑性特性を有することを特徴とする請求項１～３のいずれかに記載の半導体装置。 4. The semiconductor device according to claim 1, wherein the adhesive has a plastic property that is displaceable even after curing.
  5. 　前記半導体チップの薄膜部は、モールドされず露出されており、該半導体チップおよび前記基板の半導体チップ側の面がモールドされていることを特徴とする請求項１～４のいずれかに記載の半導体装置。 5. The semiconductor according to claim 1, wherein the thin film portion of the semiconductor chip is exposed without being molded, and the semiconductor chip and the surface of the substrate on the semiconductor chip side are molded. apparatus.
  6. 　前記基板は、前記接着剤である第１の接着剤とは異なる第２の接着剤を介して第２の基板と接着されており、前記第２の接着剤の弾性領域の弾性率よりも、前記第１の接着剤の弾性領域の弾性率の方が大きいことを特徴とする請求項１～５のいずれかに記載の半導体装置。 The substrate is bonded to the second substrate via a second adhesive different from the first adhesive that is the adhesive, and more than the elastic modulus of the elastic region of the second adhesive, 6. The semiconductor device according to claim 1, wherein the elastic modulus of the elastic region of the first adhesive is larger.
  7. 　請求項１～６のいずれかに記載の半導体装置を用いたセンサであって、前記半導体チップの前記薄膜部がダイアフラムを形成し、流体の流量を計測することを特徴とするセンサ
    。     The sensor using the semiconductor device according to any one of claims 1 to 6, wherein the thin film portion of the semiconductor chip forms a diaphragm and measures a flow rate of fluid.
  8. 　基板に、薄膜部を有する半導体チップを接着剤で固定する半導体装置の製造方法であって、
    　前記半導体チップの前記基板側の面に、圧縮方向の歪が０．４～０．６の範囲で５０ＭＰａ以上である圧縮方向の弾性率を有する接着剤を塗布して接着層を形成し、
    　前記接着層を前記基板の面に接触させて前記半導体チップを前記基板に接着固定し、
    　前記薄膜部に接触する突出部を有するモールド型で前記半導体チップを覆い、
    　前記モールド型の内部空間にモールド樹脂を注入する半導体装置の製造方法。     A method of manufacturing a semiconductor device in which a semiconductor chip having a thin film portion is fixed to a substrate with an adhesive,
    An adhesive layer is formed by applying an adhesive having an elastic modulus in the compression direction that is 50 MPa or more in a compression strain range of 0.4 to 0.6 to the surface of the semiconductor chip on the substrate side,
    Bonding the semiconductor chip to the substrate by bringing the adhesive layer into contact with the surface of the substrate;
    Covering the semiconductor chip with a mold having a protrusion that contacts the thin film portion,
    A method for manufacturing a semiconductor device, wherein a mold resin is injected into an internal space of the mold.
PCT/JP2015/065965 2014-06-23 2015-06-03 Semiconductor device, method for manufacturing semiconductor device, and sensor using semiconductor device WO2015198808A1 (en)

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