WO2015190685A1 - Agent d'encapsulation de del comprenant des particules d'oxyde de métal terre rare - Google Patents
Agent d'encapsulation de del comprenant des particules d'oxyde de métal terre rare Download PDFInfo
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- WO2015190685A1 WO2015190685A1 PCT/KR2015/003795 KR2015003795W WO2015190685A1 WO 2015190685 A1 WO2015190685 A1 WO 2015190685A1 KR 2015003795 W KR2015003795 W KR 2015003795W WO 2015190685 A1 WO2015190685 A1 WO 2015190685A1
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- 239000002245 particle Substances 0.000 title claims abstract description 86
- 239000008393 encapsulating agent Substances 0.000 title claims abstract description 29
- 229910001404 rare earth metal oxide Inorganic materials 0.000 title abstract description 11
- 150000001875 compounds Chemical class 0.000 claims abstract description 17
- 239000002952 polymeric resin Substances 0.000 claims abstract description 9
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 9
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims abstract 3
- 229920002050 silicone resin Polymers 0.000 claims description 27
- 238000005538 encapsulation Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000005011 phenolic resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920001568 phenolic resin Polymers 0.000 claims description 4
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims description 3
- -1 polystarenes Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 abstract description 27
- 238000000605 extraction Methods 0.000 abstract description 17
- 229910052767 actinium Inorganic materials 0.000 abstract 1
- 239000012153 distilled water Substances 0.000 description 23
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 23
- 238000003756 stirring Methods 0.000 description 16
- 239000003566 sealing material Substances 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 10
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 8
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 8
- 239000000908 ammonium hydroxide Substances 0.000 description 8
- 239000004202 carbamide Substances 0.000 description 8
- 238000001914 filtration Methods 0.000 description 8
- 239000011259 mixed solution Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 229910017604 nitric acid Inorganic materials 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- WUVRZBFIXJWTGS-UHFFFAOYSA-N yttrium(3+);trinitrate;hydrate Chemical compound O.[Y+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O WUVRZBFIXJWTGS-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000002105 nanoparticle Substances 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 2
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920003987 resole Polymers 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920001709 polysilazane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L101/00—Compositions of unspecified macromolecular compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Definitions
- the present invention relates to an LED encapsulant comprising rare earth metal oxide particles.
- LED Light Emitting Diode
- LED a light emitting device
- LED light emitting diode
- Increasing application of the light emitting diode (LED) due to the global energy saving trend and the development of compound semiconductor technology Is making rapid progress.
- the LED package is largely composed of LED chips, adhesives, encapsulants, phosphors and heat dissipation accessories, among which the LED encapsulant surrounds the LED chip, thereby protecting the LED chip from external shocks and the environment.
- the LED encapsulant since LED light must pass through the LED encapsulant in order to come out of the LED package, the LED encapsulant must have high optical transparency, that is, high light transmittance, and have a high refractive index suitable for increasing light extraction efficiency. Required.
- Epoxy resins with high refractive index and low cost have been widely used as LED encapsulants, but epoxy resins have low heat resistance, which causes deterioration due to heat in high-power LEDs, and yellowing due to light near blue and ultraviolet rays in white light LEDs. There is a problem of lowering the luminance.
- a silicone resin having excellent light resistance in the low wavelength region is used (the bonding energy of the siloxane bond (Si-O-Si) of the silicone resin is 106 kcal / mol, compared to the carbon-carbon (CC) bonding energy). 20 kcal / mol or more high heat resistance and excellent light resistance), the silicone resin has a low refractive index has a problem of low light extraction efficiency and weak adhesion.
- Patent document 1 includes a polysiloxane prepolymer having a TiO 2 domain having an average domain size of less than 5 nm and contains 20 to 60 mol% of TiO 2 (based on total solids), has a refractive index of> 1.61 to 1.7, room temperature and It discloses a curable liquid polysiloxane / TiO 2 composite for use in liquid, a light emitting diode encapsulation material at atmospheric pressure.
- Patent document 2 contains the epoxy resin and polysilazane which hardens reaction with the said epoxy resin, The composition for sealing materials of the optoelectronic device, the sealing material formed from the said composition, and the light emitting diode containing the said sealing material. It is started.
- Patent Document 1 KR Publication 10-2012-0129788 A (2012.11.28.)
- Patent Document 2 KR Publication 10-2012-0117548 A (2012.10.24.)
- the first is to increase the total amount of light produced by the chip
- the second method is to increase the so-called light extraction efficiency by extracting the generated light out of the LED as much as possible.
- the encapsulant surrounds the LED chip, but only about 15% of the chip generated light energy is output as light, and the rest is absorbed by the encapsulant.
- the focus of attention on the light efficiency of the LED is to improve the light extraction efficiency so that the light generated in the light emitting layer of the LED is effectively emitted to the outside without being lost by total reflection inside the LED chip.
- the present invention is to provide an encapsulant composition that significantly improves the light extraction efficiency.
- the present invention has been made to solve the above-mentioned problems of the prior art
- LED encapsulation material represented by the following formula (1) in the polymer resin, the compound containing a compound having a particle size size within the range of 10 nm to 5 ⁇ m.
- M is Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi, or Ac.
- a is 1 or 2
- b is 0-2
- c is 0-3
- d is 0-3.
- b, c, and d are not zero at the same time, and b and c are zero at the same time or not zero at the same time.
- the compound of Formula 1 is Y (OH) CO 3 It provides an LED encapsulation material, characterized in that the particle size is within the range of 100 to 1 ⁇ m.
- the compound of Formula 1, Y 2 O 3 provides a LED encapsulation material, characterized in that the particle size is within the range of 100 to 1 ⁇ m.
- the compound of Formula 1 provides an LED encapsulation material, characterized in that it has a refractive index within the range of 1.6 to 2.3.
- the polymer resin is an LED bag, characterized in that at least one selected from silicone resins, phenolic resins, acrylic resins, polystyrene, polyurethane, benzoguanamine resin, and epoxy resin. Provide ash.
- an LED encapsulation material characterized in that it further comprises phosphor particles.
- the bar material composition of the present invention has the effect of significantly improving the light extraction efficiency of the light generated in the LED chip.
- Y (OH) CO 3 particles having a size of 100 nm or less.
- Y (OH) CO 3 is a SEM photograph showing rare earth oxide particles (Y (OH) CO 3 particles having a size of 1 ⁇ m or less) of the present invention.
- 5 is a SEM photograph showing rare earth oxide particles (Y 2 O 3 particles of 500 nm or less) of the present invention.
- 6 is a SEM photograph showing rare earth oxide particles (Y 2 O 3 particles having a size of 1 ⁇ m or less) of the present invention.
- the present invention relates to an encapsulating resin and a rare earth metal oxide additive of an LED package having improved light extraction efficiency, and more particularly, to light to be trapped inside between the LED package chip and the encapsulant among the lights formed inside the LED package.
- the present invention relates to a resin for LED encapsulation containing rare earth metal oxide nanoparticles showing high luminous efficiency by extraction.
- the present invention is represented by the following formula (1) in the polymer resin, characterized in that it comprises a compound having a particle size size within the range of 10nm to 5 ⁇ m.
- M is Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi, or Ac.
- a is 1 or 2
- b is 0-2
- c is 0-3
- d is 0-3.
- b, c, and d are not zero at the same time, and b and c are zero at the same time or not zero at the same time.
- the particle size is within the range of 10 nm to 5 ⁇ m. Although it may vary slightly depending on the wavelength or the type of particles, the light extraction efficiency may be lowered if the particle size is less than 10 nm, or more than 5 ⁇ m. In addition, although there are some differences depending on the wavelength and the type of particles, since there is an optimum range of light extraction efficiency according to the particle size, the range of particle size may be a very important configuration in terms of light extraction efficiency. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
- the compound of Formula 1 is preferably Y (OH) CO 3 , or Y 2 O 3 , and more preferably Y (OH) CO 3 in view of light extraction efficiency.
- Y (OH) CO 3 preferably Y (OH) CO 3
- Y 2 O 3 preferably Y (OH) CO 3 in view of light extraction efficiency.
- the compound of Formula 1 has a refractive index within the range of 1.6 to 2.3. Less than 1.6 and greater than 2.3 may not increase the light extraction efficiency. This is because the refractive index of a typical silicon encapsulant is about 1.5 and the refractive index of a GaN chip is about 2.4.
- the total reflection problem in the light emitting device package chip occurs at the boundary between the device, external air, and silicon, which is an external encapsulant.
- the critical angle ( ⁇ crit ) that can escape when light or waves pass between two isotropic media with different refractive indices is:
- the polymer resin may be a polymer resin widely used in the related art, and is not particularly limited. For example, it can use 1 or more types chosen from silicone resin, a phenol resin, an acrylic resin, polystarene, a polyurethane, a benzoguanamine resin, and an epoxy resin, and the said silicone resin is polysilane, poly The siloxane and any one of these combinations may be used, and the phenolic resin may be at least one phenolic resin selected from bisphenol-type phenol resins, resol type phenol resins, and resol type naphthol resins.
- the resin may be one that is at least one epoxy resin selected from bisphenol F-type epoxy, bisphenol A-type epoxy, phenol novolak-type epoxy, and cresol novolak-type epoxy.
- the encapsulant composition of the present invention may further be used for the purpose of realizing a desired color by further including phosphor particles.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.7 to 5.8 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours to prepare particles having a size of 100 nm or less. In FIG. 1, SEM photographs of Y (OH) CO 3 particles having a size of 100 nm or less are shown.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.5-5.6 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours to prepare particles of 500 nm or less. In FIG. 2, SEM images of Y (OH) CO 3 particles having a size of 500 nm or less are shown.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.4 to 5.5 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours to prepare particles having a size of 1 ⁇ m or less. In FIG. 3, SEM images of Y (OH) CO 3 particles having a size of 1 ⁇ m or less are shown.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.2-5.3 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours to prepare particles having a size of 2 ⁇ m or less.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.7 to 5.8 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours.
- the dried Y (OH) CO 3 particles were calcined in an oxidizing atmosphere at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 100 nm or less.
- SEM pictures of Y 2 O 3 particles having a size of 100 nm or less are shown.
- a silicone resin a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio
- the homogenizer was added to the homogenizer. It was put and homogenized to prepare a sealing material composition.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.5-5.6 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours.
- the dried Y (OH) CO 3 particles were calcined at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 500 nm or less.
- SEM pictures of Y 2 O 3 particles having a size of 500 nm or less are shown.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.4 to 5.5 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours.
- the dried Y (OH) CO 3 particles were calcined at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 1 ⁇ m or less.
- SEM pictures of Y 2 O 3 particles having a size of 1 ⁇ m or less are shown.
- a silicone resin a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio
- the homogenizer was added to the homogenizer. It was put and homogenized to prepare a sealing material composition.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 was dissolved in 2 mL of yttrium nitrate hydrate and 40 g of urea in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.2-5.3 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours. The dried Y (OH) CO 3 particles were calcined at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 2 ⁇ m or less.
- a silicone resin a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio
- the homogenizer was added to the homogenizer. It was put and homogenized to prepare a sealing material composition.
- Silicone resin OE 6631 A and OE 6631 B were mixed at a ratio of 1: 2 to prepare a 100 wt% encapsulant composition.
- the sealing material composition of the said Examples 1-8 and the comparative example was mounted in the LED package provided with a blue LED (wavelength 450 nm) chip, and the brightness increase rate was measured.
- the light emitting device package used is a light emitting source using a chip connected by die bonding on a lead frame. After the metal wire bonding is performed so that the light emitting device and the lead frame are electrically connected, the transparent sealing material is molded with an encapsulant in which the silicone resin and the inorganic nanoparticles are dispersed.
- the brightness increase rate is expressed as a percentage of the degree to which the brightness is increased based on Comparative Example 100. Luminance measurements were performed on a DARSA Pro 5200 PL System machine from Korean Professional Scientific Instrument.
- Example 2 Example 3
- Example 4 Example 5
- Example 6 Example 7
- Example 8 % Increase in brightness 100 102.3 106.4 105.9 103.1 100.5 107.1 102.7 97.6
- the sealing material composition of the said Examples 1-8 and the comparative example was mounted in the LED package provided with the green LED (wavelength 520 nm) chip, and the brightness increase rate was measured.
- the light emitting device package used is a light emitting source using a chip connected by die bonding on a lead frame. After the metal wire bonding is performed so that the light emitting device and the lead frame are electrically connected, the transparent sealing material is molded with an encapsulant in which the silicone resin and the inorganic nanoparticles are dispersed.
- the brightness increase rate is expressed as a percentage of the degree to which the brightness is increased based on Comparative Example 100. Luminance measurements were performed on a DARSA Pro 5200 PL System machine from Korean Professional Scientific Instrument.
- Example 2 Example 3
- Example 4 Example 5
- Example 6 Example 7
- Example 8 % Increase in brightness 100 103.2 113.2 107.6 102.1 102.1 105.2 106.3 99.7
- the sealing material composition of the said Examples 1-8 and the comparative example was mounted in the LED package provided with a red LED (wavelength 620 nm) chip, and the brightness increase rate was measured.
- the light emitting device package used is a light emitting source using a chip connected by die bonding on a lead frame. After the metal wire bonding is performed so that the light emitting device and the lead frame are electrically connected, the transparent sealing material is molded with an encapsulant in which the silicone resin and the inorganic nanoparticles are dispersed.
- the brightness increase rate is expressed as a percentage of the degree to which the brightness is increased based on Comparative Example 100. Luminance measurements were performed on a DARSA Pro 5200 PL System machine from Korean Professional Scientific Instrument.
- Example 2 Example 3
- Example 4 Example 5
- Example 6 Example 7
- Example 8 % Increase in brightness 100 100.5 102.7 106.5 105.8 101.2 102.8 102.5 103.6
- Y 2 O 3 particles had a large increase or decrease in brightness according to the particle size of the particles, while Y (OH) CO 3 particles had a relatively low change in brightness according to the particle size. Approximately, the best brightness was shown around 100-1000 nm range.
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- Microelectronics & Electronic Packaging (AREA)
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
La présente invention se rapporte à un agent d'encapsulation de DEL comprenant des particules d'oxyde de métal terre rare et, plus précisément, à un agent d'encapsulation de DEL comprenant, dans une résine de polymère, un composé représenté par la formule chimique (1) et comportant une taille des particules de 10 nm à 5 μm. La composition d'agent d'encapsulation selon la présente invention présente l'avantage d'améliorer considérablement l'efficacité d'extraction lumineuse de lumière formée dans une puce à DEL. [Formule chimique (1)] Ma(OH)b(CO3)cOd Dans la formule, M représente Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi ou Ac ; a vaut 1 ou 2, b vaut 0 à 2, c vaut 0 à 3 et d vaut 0 à 3 ; b, c et d ne valent pas simultanément 0 ; et b et c soit valent simultanément 0 soit ne valent pas simultanément 0.
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KR10-2014-0071511 | 2014-06-12 | ||
KR1020140071511A KR101599134B1 (ko) | 2014-06-12 | 2014-06-12 | 희토류 금속 산화물 입자를 포함하는 led 봉지재 |
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WO2015190685A1 true WO2015190685A1 (fr) | 2015-12-17 |
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PCT/KR2015/003795 WO2015190685A1 (fr) | 2014-06-12 | 2015-04-15 | Agent d'encapsulation de del comprenant des particules d'oxyde de métal terre rare |
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KR (1) | KR101599134B1 (fr) |
WO (1) | WO2015190685A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20070069669A (ko) * | 2005-12-28 | 2007-07-03 | (주)석경에이.티 | 발광다이오드의 봉지제 |
JP2013232279A (ja) * | 2010-07-27 | 2013-11-14 | Hitachi Ltd | 封止膜およびそれを用いた有機発光ダイオード |
KR20130140815A (ko) * | 2010-12-08 | 2013-12-24 | 다우 코닝 코포레이션 | 봉지재의 형성에 적합한 실록산 조성물 |
KR20140034122A (ko) * | 2010-12-08 | 2014-03-19 | 다우 코닝 코포레이션 | 봉지재의 형성에 적합한 금속 산화물 나노입자 함유 실록산 조성물 |
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KR101390281B1 (ko) | 2011-04-15 | 2014-04-30 | 공주대학교 산학협력단 | 광전자 소자의 봉지재용 조성물, 상기 조성물로 형성한 봉지재 및 상기 봉지재를 포함하는 발광 다이오드 |
US8258636B1 (en) | 2011-05-17 | 2012-09-04 | Rohm And Haas Electronic Materials Llc | High refractive index curable liquid light emitting diode encapsulant formulation |
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2014
- 2014-06-12 KR KR1020140071511A patent/KR101599134B1/ko active IP Right Grant
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- 2015-04-15 WO PCT/KR2015/003795 patent/WO2015190685A1/fr active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20070069669A (ko) * | 2005-12-28 | 2007-07-03 | (주)석경에이.티 | 발광다이오드의 봉지제 |
JP2013232279A (ja) * | 2010-07-27 | 2013-11-14 | Hitachi Ltd | 封止膜およびそれを用いた有機発光ダイオード |
KR20130140815A (ko) * | 2010-12-08 | 2013-12-24 | 다우 코닝 코포레이션 | 봉지재의 형성에 적합한 실록산 조성물 |
KR20140034122A (ko) * | 2010-12-08 | 2014-03-19 | 다우 코닝 코포레이션 | 봉지재의 형성에 적합한 금속 산화물 나노입자 함유 실록산 조성물 |
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KR20150142910A (ko) | 2015-12-23 |
KR101599134B1 (ko) | 2016-03-03 |
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