WO2016024735A1 - Boîtier de del comprenant des particules d'oxydes métalliques des terres rares possédant d'excellentes caractéristiques de dégagement de chaleur - Google Patents
Boîtier de del comprenant des particules d'oxydes métalliques des terres rares possédant d'excellentes caractéristiques de dégagement de chaleur Download PDFInfo
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- WO2016024735A1 WO2016024735A1 PCT/KR2015/007666 KR2015007666W WO2016024735A1 WO 2016024735 A1 WO2016024735 A1 WO 2016024735A1 KR 2015007666 W KR2015007666 W KR 2015007666W WO 2016024735 A1 WO2016024735 A1 WO 2016024735A1
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- 239000002245 particle Substances 0.000 title claims abstract description 94
- 229910001404 rare earth metal oxide Inorganic materials 0.000 title abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 26
- 239000002952 polymeric resin Substances 0.000 claims abstract description 9
- 229920003002 synthetic resin Polymers 0.000 claims abstract description 9
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 4
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 4
- 229910052748 manganese Inorganic materials 0.000 claims abstract description 4
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 4
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 claims abstract description 4
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 4
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 4
- 229920002050 silicone resin Polymers 0.000 claims description 49
- 239000000203 mixture Substances 0.000 claims description 46
- 239000008393 encapsulating agent Substances 0.000 claims description 38
- 229920005989 resin Polymers 0.000 claims description 13
- 239000011347 resin Substances 0.000 claims description 13
- 239000012798 spherical particle Substances 0.000 claims description 11
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- 239000005011 phenolic resin Substances 0.000 claims description 7
- -1 polystarene Polymers 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
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- 239000000126 substance Substances 0.000 abstract description 4
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- 239000012153 distilled water Substances 0.000 description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 32
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- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 11
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- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 11
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- WUVRZBFIXJWTGS-UHFFFAOYSA-N yttrium(3+);trinitrate;hydrate Chemical compound O.[Y+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O WUVRZBFIXJWTGS-UHFFFAOYSA-N 0.000 description 11
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- 229910052710 silicon Inorganic materials 0.000 description 5
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- 229930185605 Bisphenol Natural products 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
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- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- the present invention relates to an LED package comprising rare earth metal oxide particles.
- LED Light Emitting Diode
- LED a light emitting device
- LED light emitting diode
- Increasing application of the light emitting diode (LED) due to the global energy saving trend and the development of compound semiconductor technology Is making rapid progress.
- the LED package is largely composed of LED chips, adhesives, encapsulants, phosphors and heat dissipation accessories, among which the LED encapsulant surrounds the LED chip, thereby protecting the LED chip from external shocks and the environment.
- the LED encapsulant since LED light must pass through the LED encapsulant in order to come out of the LED package, the LED encapsulant must have high optical transparency, that is, high light transmittance, and have a high refractive index suitable for increasing light extraction efficiency. In addition to being required, high heat dissipation is also required to prevent degradation of LEDs.
- epoxy resin has been widely used as an LED encapsulant, but epoxy resin has a low heat resistance and is deteriorated by heat in high-power LEDs. yellowing) to deteriorate the luminance.
- a silicone resin having excellent light resistance in the low wavelength region is used (the bonding energy of the siloxane bond (Si-O-Si) of the silicone resin is 106 kcal / mol, compared to the carbon-carbon (CC) bonding energy). 20 kcal / mol or more high heat resistance and excellent light resistance), the silicone resin has a low refractive index has a problem of low light extraction efficiency and weak adhesion.
- Patent document 1 includes a polysiloxane prepolymer having a TiO 2 domain having an average domain size of less than 5 nm and contains 20 to 60 mol% of TiO 2 (based on total solids), has a refractive index of> 1.61 to 1.7, room temperature and Disclosed is a curable liquid polysiloxane / TiO 2 composite for use as a light emitting diode encapsulant that is liquid at atmospheric pressure.
- Patent document 2 contains the epoxy resin and polysilazane which hardens reaction with the said epoxy resin, The composition for sealing materials of the optoelectronic device, the sealing material formed from the said composition, and the light emitting diode containing the said sealing material. It is started.
- Patent Document 1 KR Publication 10-2012-0129788 A (2012.11.28.)
- Patent Document 2 KR Publication 10-2012-0117548 A (2012.10.24.)
- LEDs inevitably convert some of the excitation energy, which could not be converted to light at the time of light emission, into heat, resulting in thermal shocks to the LEDs, resulting in significantly shortened LED lifetimes.
- the encapsulant wraps the LED chip, but when the heat dissipation characteristics of the encapsulant are not excellent, heat generated in the LED may not be released, and the internal temperature may be increased. As a result, the life of the LED is shortened.
- the present invention is to provide an encapsulant composition that not only has good light extraction efficiency, but also significantly improves heat dissipation characteristics.
- the present invention has been made to solve the above-mentioned problems of the prior art
- an LED package having an LED encapsulant including a compound represented by the following Chemical Formula 1 in a polymer resin.
- M is Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi, or Ac
- a is 1 or 2
- b is 0-2
- c is 0-3
- d is 0-3.
- b, c, and d are not zero at the same time, and b and c are zero at the same time or not zero at the same time.
- the formula compound, Y (OH) CO 3 It provides an LED package, characterized in that.
- the compound of Formula 1, Y 2 O 3 It provides an LED package, characterized in that.
- the compound of Formula 1 provides an LED package, characterized in that containing less than 30% by weight relative to the total composition.
- the Y (OH) CO 3 is 0.1 to 20% by weight relative to the total composition It provides an LED package comprising a.
- the Y 2 O 3 provides an LED package, characterized in that containing less than 20% by weight relative to the total composition.
- the compound of Formula 1 provides a LED package, characterized in that the spherical particle is a spherical degree of 0.5 to 1.
- the spherical particles provide an LED package, characterized in that having a particle diameter within the range of 100nm ⁇ 2 ⁇ m.
- the spherical particles provide a LED package, characterized in that the monodispersion.
- the compound of Formula 1 provides an LED package, characterized in that it has a refractive index within the range of 1.6 to 2.3.
- the polymer resin is a LED package, characterized in that at least one selected from silicone resins, phenolic resins, acrylic resins, polystarene, polyurethane, benzoguanamine resin, and epoxy resin. To provide.
- an LED package characterized in that it further comprises phosphor particles.
- the light emission wavelength of the LED chip provides an LED package, characterized in that within the 400 ⁇ 500nm range.
- the compound of Formula 1 provides an LED package, characterized in that uniformly distributed in the encapsulant.
- the LED package of the present invention has the effect of extending the life expectancy by quickly radiating heat generated from the LED chip to the outside.
- Figure 1 shows an embodiment of the LED package of the present invention.
- FIG 2 shows another embodiment of the LED package of the present invention.
- 3 to 7 illustrate calibration curves showing changes in luminance according to content, particle size, and sphericity of each of Y (OH) CO 3 particles and Y 2 O 3 particles.
- Example 9 is a comparative graph showing the life aging degree of the LED by measuring the relative brightness (%) according to the light emission time according to the yttrium compound content (Examples 1 to 3, and Comparative Example 1).
- the present invention relates to an LED package including an LED encapsulant including a compound represented by Chemical Formula 1 in a polymer resin.
- M is Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi, or Ac
- a is 1 or 2
- b is 0-2
- c is 0-3
- d is 0-3.
- b, c, and d are not zero at the same time, and b and c are zero at the same time or not zero at the same time.
- the compound of Formula 1 is preferably Y (OH) CO 3 , or Y 2 O 3 , and more preferably Y (OH) CO 3 in view of light extraction efficiency. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
- the compound of Formula 1 When the compound of Formula 1 is included in the polymer resin, it is preferable in terms of heat dissipation, but more preferably 30% by weight of the total composition. This is because when the amount is too small, the heat dissipation performance may be insignificant. On the contrary, even if the amount is too large, the light extraction efficiency may decrease. That is, although there are some differences depending on the wavelength of the light and the type of the compound, there is an optimal content range for maximizing the light extraction efficiency, and regardless of the wavelength of the light or the type of the compound, This is because the extraction efficiency will not be good. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
- the compound of Formula 1 is Y (OH) CO 3
- Y 2 O 3 it is preferably included to 20% by weight or less relative to the total composition. It is because it is difficult to obtain the optimum brightness if the content is small or large out of the above range. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
- the said Formula (1) compound is a spherical particle with a sphericity of 0.5-1, and it is more preferable so that sphericity is close to one.
- the sphericity is a value obtained by dividing the maximum diameter of the particle by the minimum diameter, which may be defined as in Equation 1 below, and the closer to 1, the closer to the perfect sphere.
- the spherical particles preferably have a particle size within the range of 100 nm to 2 ⁇ m. This may be slightly different depending on the type of the compound of the spherical particles, but if the particle size is less than 100nm or more than 2 ⁇ m, the light extraction efficiency may be lowered. In addition, although there are some differences depending on the type of particles, since there is an optimal range of light extraction efficiency according to the particle size, the range of the particle size may be a very important configuration in terms of light extraction efficiency. A more detailed description thereof will be understood with reference to the following Examples and Experimental Examples.
- the spherical particles are monodisperse, and in the case of monodispersion, a constant refractive index can be imparted, which is preferable in view of improving light extraction efficiency.
- the compound of Formula 1 has a refractive index within the range of 1.6 to 2.3. Less than 1.6 and greater than 2.3 may not increase the light extraction efficiency. This is because the refractive index of a typical silicon encapsulant is about 1.5 and the refractive index of a GaN chip is about 2.4.
- the total reflection problem in the light emitting device package chip occurs at the boundary between the device, external air, and silicon, which is an external encapsulant.
- the critical angle ( ⁇ crit ) that can escape when light or waves pass between two isotropic media with different refractive indices is:
- the polymer resin may be a polymer resin widely used in the related art, and is not particularly limited. For example, it can use 1 or more types chosen from silicone resin, a phenol resin, an acrylic resin, polystarene, a polyurethane, a benzoguanamine resin, and an epoxy resin, and the said silicone resin is polysilane, poly The siloxane and any one of these combinations may be used, and the phenolic resin may be at least one phenolic resin selected from bisphenol-type phenol resins, resol type phenol resins, and resol type naphthol resins.
- the resin may be one that is at least one epoxy resin selected from bisphenol F-type epoxy, bisphenol A-type epoxy, phenol novolak-type epoxy, and cresol novolak-type epoxy.
- FIG. 1 shows an embodiment of the LED package of the present invention.
- the LED package 100 according to the present invention is provided on a substrate 110, a lead frame 120 installed on the substrate 110, and the lead frame 120 to emit light.
- the encapsulant 200 may be filled in the reflector 150 to seal the LED chip 130 and the bonding wire 140.
- Figure 2 shows another embodiment of the LED package of the present invention.
- the LED package 100 ′ according to the present invention may further include phosphor particles 230 and may be used for implementing a desired color.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 4 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5-6 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. for 3 hours to prepare particles having a size of 300 nm or less. All spherical particles produced monodispersed particles of constant size.
- the encapsulant composition was the same as in Example 1 Prepared.
- the encapsulant composition was the same as in Example 1 Prepared.
- the sealing material composition was the same as in Example 1 Prepared.
- the encapsulant composition was the same as in Example 1 Prepared.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 4 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5-6 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. in an oven for 3 hours. The dried Y (OH) CO 3 particles were calcined in an oxidizing atmosphere at 900 ° C. for 3 hours to obtain size Y 2 O 3 particles of 300 nm or less.
- a silicone resin a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio
- Y 2 O 3 particles After adding Y 2 O 3 particles to a silicone resin (a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio) (99% by weight of a silicone-based resin and 1% by weight of Y 2 O 3 ), it was added to a homogenizer. It was put and homogenized to prepare an encapsulant composition.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.7 to 5.8 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. for 3 hours to prepare particles having a size of 100 nm or less.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.5-5.6 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. for 3 hours to prepare particles of 500 nm or less.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.4 to 5.5 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. for 3 hours to prepare particles having a size of 1 ⁇ m or less.
- Y (OH) CO 3 particle preparation is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.2-5.3 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. for 3 hours to prepare particles having a size of 2 ⁇ m or less.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.7 to 5.8 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours. The dried Y (OH) CO 3 particles were calcined at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 100 nm or less.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.5-5.6 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. in an oven for 3 hours. The dried Y (OH) CO 3 particles were calcined at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 500 nm or less.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 is based on 100 mL of distilled water. 2 g yttrium nitrate hydrate and 40 g urea were dissolved in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.4 to 5.5 via a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. in an oven for 3 hours.
- the dried Y (OH) CO 3 particles were calcined at 900 ° C. for 3 hours to obtain Y 2 O 3 particles having a size of 1 ⁇ m or less. 6, SEM pictures of Y 2 O 3 particles having a size of 1 ⁇ m or less are shown.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- Y (OH) CO 3 was dissolved in 2 mL of yttrium nitrate hydrate and 40 g of urea in 100 mL of distilled water, followed by mixing with sufficient stirring for 30 minutes. After stirring, the pH was adjusted to 5.2-5.3 through a base of nitric acid and ammonium hydroxide. The mixed solution was heated at 90 ° C. and stirred for 1 hour, followed by filtration and washing with distilled water three times. The washed Y (OH) CO 3 particles were dried in an oven at 70 ° C. for 3 hours. The dried Y (OH) CO 3 particles were calcined for 3 hours at 900 ° C. in an oxidizing atmosphere to obtain Y 2 O 3 particles having a size of 2 ⁇ m or less.
- Y 2 O 3 particles were obtained by firing after the production of Y (OH) CO 3 .
- the preparation of Y (OH) CO 3 particles is based on 100 mL of distilled water. After dissolving 0.5 g yttrium nitrate hydrate and 40 g urea in 100 mL of distilled water, the pH was adjusted to 5 to 6 through nitric acid and mixed with sufficient stirring for 30 minutes. The mixed solution is heated to 60 ° C. and sufficiently stirred for 30 minutes, followed by stirring for 1 hour by adjusting the pH to 8 to 9 through ammonium hydroxide. This was filtered and distilled water washed three times. The washed Y (OH) CO 3 particles were dried at 70 ° C. for 3 hours, and then fired at 900 ° C. for 6 hours in an oxidizing atmosphere. After firing, it was milled to reduce the particle size to 300 nm.
- the particles were not spherical, and the measured and sphericity was less than 0.5.
- a silicone resin a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio
- Y 2 O 3 particles After adding Y 2 O 3 particles to a silicone resin (a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio) (99% by weight of a silicone-based resin and 1% by weight of Y 2 O 3 ), it was added to a homogenizer. It was put and homogenized to prepare an encapsulant composition.
- Silicone resin OE 6631 A and OE 6631 B were mixed at a ratio of 1: 2 to prepare a 100 wt% encapsulant composition.
- Al 2 O 3 particles were added to the silicone resin (a mixture of OE 6631 A and OE 6631 B in a 1: 2 ratio) (99% by weight of the silicone resin and 1% by weight of Y 2 O 3 ), which was then added to the homogenizer. It was put and homogenized to prepare an encapsulant composition.
- the sealing material composition of Examples 1-23 and the comparative example was mounted in the LED package provided with LED (wavelength 450 nm) chip, and the brightness increase rate was measured.
- the light emitting device package used is a light emitting source using a chip connected by die bonding on a lead frame. After the metal wire bonding is performed so that the light emitting device and the lead frame are electrically connected, the transparent sealing material is molded with an encapsulant in which the silicone resin and the inorganic nanoparticles are dispersed.
- the brightness increase rate is expressed as a percentage of the degree to which the brightness is increased based on Comparative Example 100. Luminance measurements were performed on a DARSA Pro 5200 PL System machine from Korean Professional Scientific Instrument.
- Example 10 Increase in brightness 100 99.7 102.9 105.9 110.1 109.6 107.6 107.1 102.6 87.6 77.1
- Example 12 Example 13
- Example 14 Example 15
- Example 16 Example 17
- Example 18 % Increase in brightness 100 102.3 106.4 105.9 103.1 100.5 107.1 102.7 97.6
- Example 20 Example 21
- Example 22 Example 23 % Increase in brightness 100 101.2 100.5 99.6 96.3 87.6
- 3 to 7 illustrate calibration curves showing changes in luminance according to content, particle size, and sphericity of each of Y (OH) CO 3 particles and Y 2 O 3 particles. Through this curve, the content, particle size, and sphericity range of the highest luminance increase can be identified.
- the heat dissipation effect of the LED package of Example 1 and Comparative Examples 1 and 2 was measured twice using a thermal imaging camera (Ti 400, 1W class drive).
- Example 1 As a result of the temperature measurement, in Example 1, compared with Comparative Example 1, the results were about 4.2 to 4.4 °C lower, it was confirmed that the heat dissipation performance was improved overall.
- Examples 1 to 3 and Comparative Example 1 of the LED (LED 1W COB) package by measuring the relative intensity (%) according to the light emission time, the life aging degree of the LED was confirmed.
- encapsulant 220 rare earth metal oxide particles
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Abstract
La présente invention concerne un boîtier de DEL comprenant des particules d'oxydes métalliques des terres rares et, plus spécifiquement, un boîtier de DEL comprenant : une puce de DEL ; ainsi qu'un élément de scellement de DEL contenant un composé, représenté par la formule chimique (1) ci-dessous, dans une résine polymère. [Formule chimique 1] Ma(OH)b(CO3)cOd dans laquelle M représente Sc, Y, La, Al, Lu, Ga, Zn, V, Zr, Ca, Sr, Ba, Sn, Mn, Bi ou Ac ; a est 1 ou 2, b est 0 à 2, c est 0 à 3, et d est 0 à 3, à condition que b, c, et d ne soient pas 0 en même temps, et que b et c soient 0 en même temps ou autres que 0 en même temps.
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KR20090020074A (ko) * | 2007-08-22 | 2009-02-26 | 삼성전자주식회사 | 금속 하이드록시 탄산염 나노 입자가 코팅된 형광체 및그의 제조방법 |
KR20110068867A (ko) * | 2009-12-15 | 2011-06-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 광반도체 소자 밀봉용 수지 조성물 및 당해 조성물로 밀봉된 광반도체 장치 |
JP2011129661A (ja) * | 2009-12-17 | 2011-06-30 | Nichia Corp | 発光装置 |
KR20120097477A (ko) * | 2009-07-06 | 2012-09-04 | 크리 인코포레이티드 | 산란 입자 영역을 갖는 발광 다이오드 패키지 |
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US8258636B1 (en) | 2011-05-17 | 2012-09-04 | Rohm And Haas Electronic Materials Llc | High refractive index curable liquid light emitting diode encapsulant formulation |
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KR20090020074A (ko) * | 2007-08-22 | 2009-02-26 | 삼성전자주식회사 | 금속 하이드록시 탄산염 나노 입자가 코팅된 형광체 및그의 제조방법 |
KR20120097477A (ko) * | 2009-07-06 | 2012-09-04 | 크리 인코포레이티드 | 산란 입자 영역을 갖는 발광 다이오드 패키지 |
KR20110068867A (ko) * | 2009-12-15 | 2011-06-22 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 광반도체 소자 밀봉용 수지 조성물 및 당해 조성물로 밀봉된 광반도체 장치 |
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CN109155349B (zh) * | 2016-05-18 | 2021-09-07 | 亮锐控股有限公司 | 照明组件及用于制造照明组件的方法 |
US11158772B2 (en) | 2016-05-18 | 2021-10-26 | Lumileds Llc | Lighting assembly and method for manufacturing a lighting assembly |
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