WO2015190335A1 - Appareil de photothérapie - Google Patents

Appareil de photothérapie Download PDF

Info

Publication number
WO2015190335A1
WO2015190335A1 PCT/JP2015/065764 JP2015065764W WO2015190335A1 WO 2015190335 A1 WO2015190335 A1 WO 2015190335A1 JP 2015065764 W JP2015065764 W JP 2015065764W WO 2015190335 A1 WO2015190335 A1 WO 2015190335A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
light emitting
flexible substrate
phototherapy device
layer
Prior art date
Application number
PCT/JP2015/065764
Other languages
English (en)
Japanese (ja)
Inventor
和央 吉田
Original Assignee
コニカミノルタ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタ株式会社 filed Critical コニカミノルタ株式会社
Priority to JP2016527750A priority Critical patent/JPWO2015190335A1/ja
Publication of WO2015190335A1 publication Critical patent/WO2015190335A1/fr

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • AHUMAN NECESSITIES
    • A61MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61NELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
    • A61N5/00Radiation therapy
    • A61N5/06Radiation therapy using light
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H05B33/24Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode

Definitions

  • the present invention relates to a phototherapy device, and more particularly to a phototherapy device for effectively performing a wide range of treatment by light irradiation.
  • treatment with light irradiation so-called phototherapy
  • phototherapy treatment with infrared irradiation
  • pain relief and thinning hair treatment such as stiff shoulders and low back pain
  • treatment with ultraviolet irradiation is performed for treatment of atopic dermatitis.
  • a phototherapy device used for the phototherapy as described above for example, a plurality of light emitting means in which light emitting diode elements are arranged on the surface, and a control means for controlling the light emission amount and the light emission time for each of the light emitting means are provided. Things have been proposed. According to such a phototherapy device, the light intensity distribution and the temperature distribution on the treatment light irradiation surface are made uniform (see, for example, Patent Document 1 below).
  • an organic light emitting diode that emits a therapeutic wavelength is used to increase the spectrum width and suppress heat generation.
  • the organic light emitting diode may be configured to include quantum dots (see, for example, Patent Document 2 below).
  • the above-described phototherapy apparatus is not configured to uniformly irradiate light of a specific narrow band wavelength to a wide range of treatment sites.
  • the present invention provides a phototherapy device that can uniformly irradiate light of a specific narrow band wavelength to a wide range of treatment sites, and thereby achieve a high therapeutic effect on a wide range of treatment sites. With the goal.
  • the phototherapy device of the present invention comprises a flexible substrate and the flexible substrate, and has a light emitting surface that is flexibly bent along the substrate surface of the flexible substrate and has a half-value width.
  • a surface light emitting member that emits emitted light in a wavelength region of 100 nm or less from the light emitting surface.
  • the phototherapy device having such a configuration, since the light emitting surface that is flexibly bent along the substrate surface of the flexible substrate is provided, the light emitting surface arranged along a wide range of the treatment site is uniform with respect to the treatment site. It is possible to irradiate light having a narrow band wavelength with a half width of 100 nm or less.
  • the phototherapy device of the present invention it is possible to irradiate a wide range of treatment sites uniformly with a light having a narrow band wavelength with a high therapeutic effect. It is possible to expect achievement of the effect.
  • FIG. 1 is a cross-sectional view for explaining a schematic overall configuration of a phototherapy apparatus according to an embodiment to which the present invention is applied.
  • a phototherapy device 1 according to an embodiment to which the present invention is applied includes a flexible substrate 3 and a surface emitting member 5 configured using the flexible substrate 3.
  • the flexible substrate 3 is made of a flexible material that bends.
  • the flexible substrate 3 is made of a resin film, a thin glass material having flexibility, or a metal material. If the light generated by the surface light emitting member 5 is extracted as the emitted light h after passing through the flexible substrate 3, a material having transparency to the emitted light h is selected and used for the flexible substrate 3. In addition, the flexible substrate 3 does not need to have transparency to the emitted light h if the light generated by the surface light emitting member 5 is not extracted from the flexible substrate 3 as the emitted light h.
  • polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (TAC), cellulose acetate butyrate, Cellulose esters such as cellulose acetate propionate (CAP), cellulose acetate phthalate, cellulose nitrate or derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate, norbornene resin, polymethylpentene , Polyetherketone, polyimide, polyethersulfone (PES), poly Enylene sulfide, polysulfones, polyether imide, polyether ketone imide, polyamide, fluororesin, nylon, polymethyl methacrylate, acrylic or polyarylates, Arton (trade name, manufactured by JSR) or Appel (trade name,
  • the surface of the resin film is provided with a film having a function of suppressing the intrusion of moisture, oxygen, etc. that causes deterioration of the material constituting the resin film.
  • a film having a function of suppressing the intrusion of moisture, oxygen, etc. that causes deterioration of the material constituting the resin film is used.
  • an inorganic film such as silicon oxide, silicon dioxide, or silicon nitride, an organic film, or a hybrid film that combines these films is used.
  • a film in which both are alternately laminated a plurality of times is used.
  • Examples of the metal material constituting the flexible substrate 3 include one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum. It is done.
  • the surface light emitting member 5 is configured using the flexible substrate 3, and has a light emitting surface 5 a that bends flexibly along the substrate surface of the flexible substrate 3. Further, the surface light emitting member 5 emits emitted light h in a wavelength region having a half-value width of 100 nm or less, preferably a half-value width of 50 nm or less, and 3 nm or more as light for use in treatment from the light emitting surface 5a.
  • the surface light emitting member 5 has a configuration in which the light emitting functional layer 10 is provided along the main surface of the flexible substrate 3 as illustrated in FIG.
  • the light emitting surface 5 a of such a surface light emitting member 5 is, for example, a substrate surface on one main surface side of the flexible substrate 3 as shown in the figure, or another component provided along the main surface of the flexible substrate 3. It may be the surface.
  • the light emitting functional layer 10 is composed of the sealing adhesive 17 and the sealing flexible substrate 19 except for the terminal portion. It is in a sealed state.
  • the flexible substrate 3 is configured as a light guide plate
  • the coating having a function of suppressing intrusion of moisture, oxygen, and the like as described above Is provided.
  • the phototherapy device 1 becomes waterproof and has a structure that can withstand bathing and water work.
  • the light emission h referred to here is light emitted from the light emitting surface 5 a of the surface light emitting member 5, for example, light generated by the light emitting functional layer 10 of the surface light emitting member 5 or the surface light emitting member 5.
  • This light is modulated light generated by any one of the constituent elements.
  • the wavelength region of 100 nm or less, preferably 50 nm or less as referred to here is the full width at half maximum of the spectrum of the emitted light h.
  • This emitted light h is light used for treatment, and an appropriate wavelength in the range of about 400 nm to 1000 nm is set depending on the purpose of treatment.
  • light including a wavelength region with a wavelength of 640 nm is an example for the purpose of treating thin hair
  • light including a wavelength region of 311 nm to 313 nm is an example for the purpose of treating atopic dermatitis.
  • the phototherapy device 1 configured as described above has a light emitting surface 5a that bends flexibly along the substrate surface of the flexible substrate 3. For this reason, the light-emitting surface 5a is uniformly arranged along a wide range of treatment sites, and the narrow half-width of 100 nm or less, or the half-value width of 50 nm or less is uniform from the light-emitting surface 5a to the treatment site. Light in the wavelength region of the band can be irradiated. As a result, it is possible to expect a high therapeutic effect to be achieved over a wide range of treatment sites.
  • the narrow-band light emitted from the light emitting surface 5a can secure a certain amount of energy by setting its wavelength region to a full width at half maximum of 3 nm or more, and this can also expect a high therapeutic effect. It becomes possible.
  • the sealing adhesive 17 is used as a sealing agent for sealing the light emitting functional layer 10 sandwiched between the flexible substrate 3 and the sealing flexible substrate 19.
  • a sealing adhesive 17 is a photocuring and thermosetting adhesive having a reactive vinyl group of an acrylic acid-based oligomer or a methacrylic acid-based oligomer, moisture such as 2-cyanoacrylate ester, etc.
  • a curable adhesive, an epoxy-based heat and chemical curable (two-component mixed) adhesive, or the like may be used, and a desiccant may be dispersed.
  • the sealing flexible substrate 19 is made of a flexible material that bends.
  • the sealing flexible substrate 19 is made of a resin film, a flexible thin film-like glass material, or a metal material.
  • a material having transparency to the emitted light h is selected. Used.
  • the flexible substrate 3 does not need to have light transmittance when the light generated by the surface light emitting member 5 is not taken out from the sealing flexible substrate 19. In this case, a material having transparency to the emitted light h is selected and used.
  • Such a flexible substrate 19 for sealing is configured using a material appropriately selected from the materials exemplified for the flexible substrate 3.
  • FIG. 2 is a schematic cross-sectional view of the phototherapy device of the first embodiment.
  • the phototherapy device 1-1 of the first embodiment shown in this figure is provided on the flexible substrate 3, the organic electroluminescent element 11 provided on one main surface of the flexible substrate 3, and the other main surface of the flexible substrate 3.
  • the bandpass filter 13 is provided.
  • the flexible substrate 3, the organic electroluminescent element 11, and the band pass filter 13 constitute a surface light emitting member 5-1, and one main surface side of the band pass filter 13 is flexible along the substrate surface of the flexible substrate 3.
  • the light emitting surface 5a is bent.
  • this phototherapy device 1-1 has the organic electroluminescence element 11 sealed with the sealing adhesive and the sealing flexible substrate described above. It is in the state. Details of each component will be described below.
  • ⁇ Flexible substrate 3 As the flexible substrate 3, a material having a light transmitting property that transmits light generated by the organic electroluminescent element 11 is selected and used from the materials exemplified above.
  • the organic electroluminescent element 11 has a configuration in which a lower electrode 11a, a light emitting functional layer 11b configured using an organic material, and an upper electrode 11c are stacked in this order from the flexible substrate 3 side.
  • the light emitting functional layer 11b includes at least a light emitting layer.
  • the lower electrode 11 a constitutes an anode or a cathode in the organic electroluminescent element 11.
  • the phototherapy device 1-1 is configured to take out the light generated in the light emitting functional layer 11b of the organic electroluminescent element 11 as the emitted light h after passing through the flexible substrate 3.
  • the lower electrode 11a is configured as an electrode having optical transparency.
  • a silver (Ag) thin film is preferably used because it has both optical transparency and electrical conductivity. If a silver thin film is used as the lower electrode 11a, various films for forming a silver thin film with a uniform film thickness may be provided as a base layer of the lower electrode 11a. *
  • Such an underlayer may be composed of an organic material or an inorganic material.
  • an organic material constituting the underlayer a compound containing nitrogen, a compound containing sulfur, or a compound containing nitrogen and sulfur is preferably used.
  • the inorganic material constituting the underlayer at least one of aluminum (Al), palladium (Pd), platinum (Pt), and zinc (Zn) is preferably used.
  • any of the specific materials exemplified above has an effect of suppressing aggregation of silver (Ag) by interacting with silver (Ag). For this reason, the film thickness uniformity of the lower electrode 11a is ensured by forming the lower electrode 11a made of a silver (Ag) thin film adjacent to the base layer made of such a material.
  • the lower electrode 11a may be configured as a semi-transmissive and semi-reflective film.
  • the lower electrode 11a functions as a semi-transmissive / semi-reflective film.
  • the thickness of the silver (Ag) thin film is set to 5 nm to 50 nm, preferably 8 nm to 30 nm. It can be used as a semi-reflective film.
  • the organic electroluminescent element 11 has a microcavity structure.
  • the organic electroluminescent element 11 having such a microcavity structure is configured to have a thickness that does not impair the flexibility of the flexible substrate 3.
  • the overall layer structure is not limited and may be a general layer structure.
  • the light generated in the light emitting layer includes the wavelength region of the emitted light h extracted from the light emitting surface 5a of the phototherapy device 1-1.
  • Examples of typical configurations of the light emitting functional layer 11b include the following configurations, but are not limited thereto.
  • Anode / light emitting layer / cathode (2) Anode / light emitting layer / electron transport layer / cathode (3) Anode / hole transport layer / light emitting layer / cathode (4) Anode / hole transport layer / light emitting layer / electron Transport layer / cathode (5) anode / hole transport layer / light emitting layer / electron transport layer / electron injection layer / cathode (6) anode / hole injection layer / hole transport layer / light emitting layer / electron transport layer / cathode ( 7) Anode / hole injection layer / hole transport layer / (electron blocking layer /) light emitting layer / (hole blocking layer /) electron transport layer / electron injection layer / cathode
  • positioned between an anode and a cathode is a layer which comprises the light emission functional layer 11b, and is a layer corresponded to the light emission functional layer 10 demonstrated using FIG.
  • the light emitting layer is composed of a single layer or a plurality of layers. When there are a plurality of light emitting layers, a non-light emitting intermediate layer may be provided between the light emitting layers.
  • the light emitting functional layer 11b has a configuration that can emit light having a wavelength used for treatment by the phototherapy device 1-1.
  • the upper electrode 11c constitutes an anode or a cathode in the organic electroluminescent element 11, and is used as a cathode when the lower electrode 11a is an anode and as an anode when the lower electrode 11a is a cathode.
  • the phototherapy device 1-1 is configured to extract the emitted light h generated in the light emitting functional layer 11b of the organic electroluminescent element 11 from the flexible substrate 3 side
  • the upper electrode 11c has a light reflecting function. Is preferred.
  • As the upper electrode 11c having a light reflection function for example, an aluminum electrode is used.
  • the band-pass filter 13 transmits only light in a specific wavelength band used for treatment among light generated in the light emitting functional layer 11b and transmitted through the flexible substrate 3, and has a half-value width of 100 nm or less, preferably a half-value width of 50 nm.
  • the light having a specific wavelength band of 3 nm or more is transmitted below.
  • An example of such a band-pass filter 13 is, for example, one configured with a dielectric multilayer film, or one configured as a two-cavity interference filter that combines a dielectric multilayer film with a shielding filter of a metal dielectric multilayer film. Although it may be, it is assumed that it can be bent following the flexible substrate 3.
  • the dielectric multilayer film includes a high refractive index material layer such as niobium oxide (Nb 2 O 5 ), titanium oxide (TiO 2 ), or zinc sulfide (ZnS), and a low refractive index such as silicon oxide (SiO 2 ).
  • a high refractive index material layer such as niobium oxide (Nb 2 O 5 ), titanium oxide (TiO 2 ), or zinc sulfide (ZnS)
  • a low refractive index such as silicon oxide (SiO 2 ).
  • the band-pass filter 13 is provided on the main surface of the flexible substrate 3 opposite to the surface on which the organic electroluminescent element 11 is provided, and is bonded to the flexible substrate 3 or the substrate of the flexible substrate 3, for example.
  • the surface is formed by film formation.
  • the surface opposite to the surface facing the flexible substrate 3 is the light emitting surface 5a of the surface light emitting member 5-1.
  • the phototherapy device 1-1 having the above-described configuration uses a surface light-emitting member 5-1 including the flexible substrate 3, the organic electroluminescent element 11, and the band-pass filter 13. Since the organic electroluminescent element 11 is a surface light emitting member having a thin film laminated thereon and has flexibility, it bends following the flexible substrate 3.
  • the band-pass filter 13 is configured to have flexibility, and the light-emitting surface 5 a configured by the filter surface of the band-pass filter 13 is configured to bend following the flexible substrate 3.
  • the light including the wavelength for achieving the therapeutic purpose emitted in the light emitting functional layer 11b of the organic electroluminescent element 11 passes through the bandpass filter 13 so that the half width is 100 nm or less.
  • the light is emitted from the light emitting surface 5a as the light emission h having a narrow band wavelength preferably having a half width of 50 nm or less.
  • light including a wavelength for achieving the therapeutic purpose is emitted from the light emitting surface 5a arranged along the treatment site as light having a narrow band having a high therapeutic effect, such as a half-value width of 100 nm or less or a half-value width of 50 nm or less. be able to. As a result, it is possible to expect a high therapeutic effect to be achieved over a wide range of treatment sites.
  • the lower electrode 11a made of silver (Ag) is provided adjacent to the base layer made of the specific material described above to ensure the uniformity of the thickness of the lower electrode 11a, the lower electrode 11a The thickness of the light emitting functional layer 11c between 11a and the upper electrode 11c is stabilized. Thereby, the occurrence of leakage between the lower electrode 11a and the upper electrode 11 is suppressed. As a result, it is possible to prevent abnormal heat generation due to the leak in the phototherapy device 1-1 that is highly concerned about leak due to its high flexibility.
  • ⁇ Modification 1> As a first modification of the first embodiment, a configuration in which the emitted light h is emitted from the side opposite to the flexible substrate 3 can be exemplified.
  • the lower electrode 11a is configured as an electrode having a light reflecting function
  • the upper electrode 11c is configured as an electrode having light transmittance.
  • the band-pass filter 13 is provided on the side of the sealing flexible substrate (not shown here) by bonding or film formation, and the flexible substrate 3 does not have to be light-transmitting.
  • the sealing adhesive and the flexible substrate for sealing, in which is omitted, have optical transparency. Even if it is such a structure, the effect similar to 1st Embodiment can be acquired.
  • the base layer forms a part of the light emitting functional layer 11b. Therefore, the base layer is made of a material that can perform the functions necessary for the light emitting functional layer such as the charge transport function and the charge injection function among the organic materials containing nitrogen and sulfur. It is possible to prevent abnormal heat generation.
  • the wavelength band of the emitted light h is narrowed only by using the organic electroluminescent element 11 as a microcavity structure without using the bandpass filter 13. May be. Even with such a configuration, the microcavity structure allows emission light h having a specific narrow band wavelength having a half width of 100 nm or less, preferably 50 nm or less, to be emitted from the light emitting surface 5a.
  • Such a modification 2 is also applied to a configuration in which the emitted light h is emitted from the opposite side to the flexible substrate 3 in combination with the modification 1.
  • the upper electrode 11c on the light extraction side may be configured as a semi-transmissive / semi-reflective film using, for example, a silver (Ag) thin film. It is possible to prevent abnormal heat generation.
  • FIG. 3 is a schematic cross-sectional view of the phototherapy device of the second embodiment.
  • the phototherapy device 1-2 of the second embodiment shown in this figure is different from the phototherapy device of the first embodiment in that a dielectric multilayer as a bandpass filter is provided between the flexible substrate 3 and the organic electroluminescent element 11.
  • the film 21 is provided. That is, the surface emitting member 5-2 is configured by the flexible substrate 3, the dielectric multilayer film 21, and the organic electroluminescent element 11, and the substrate surface on one main surface side of the flexible substrate 3 becomes the light emitting surface 5a that is flexibly bent. ing.
  • the configurations of the flexible substrate 3 and the organic electroluminescent element 11 and other configurations are the same as those in the first embodiment. Therefore, here, the configuration of the dielectric multilayer film 21 will be described, and description of other components will be omitted.
  • the dielectric multilayer film 21 is disposed between the light-transmitting flexible substrate 3 and the organic electroluminescent element 11.
  • This dielectric multilayer film 21 is provided as a microcavity that transmits only light of a specific wavelength used for treatment among light generated in the light emitting functional layer 11b and transmitted through the flexible substrate 3, and has a half-value width of 100 nm or less, preferably Transmits light of a specific narrow band wavelength having a half width of 50 nm or less and 3 nm or more.
  • Such a dielectric multilayer film 21 is formed by film formation on the substrate surface of the flexible substrate 3, and each layer constituting the organic electroluminescent element 11 is sequentially formed on the dielectric multilayer film 21. Formed by.
  • the dielectric multilayer film 21 has a layer structure that does not impair the flexibility of the flexible substrate 3.
  • the substrate surface on the one main surface side of the flexible substrate 3 is a light emitting surface 5a that is flexibly bent. Accordingly, the light emitting surface 5a has flexibility to bend following the flexible substrate 3, and the light emitting surface 5a has a half-width of 100 nm or less, preferably a half-value width of 50 nm or less and a specific narrowband wavelength of 3 nm or more. h is released. As a result, similar to the first embodiment, it is possible to irradiate the light-emitting light h having a specific narrow band wavelength having a high therapeutic effect uniformly to a wide range of treatment sites. On the other hand, it is possible to expect to achieve a high therapeutic effect.
  • the organic EL device 11 is made microscopic by using the lower electrode 11a as a transflective film made of, for example, a silver thin film.
  • a cavity structure may be used.
  • light having a specific wavelength used for treatment is resonated between the laminated structure of the lower electrode 11a and the dielectric multilayer film 21 and the upper electrode 11c, and is extracted from the flexible substrate 3 side.
  • the lower electrode 11a is configured as an electrode having a light reflecting function
  • the upper electrode 11c is configured as an electrode having optical transparency.
  • a dielectric multilayer film 21 is formed on the upper electrode 11c side of the organic electroluminescent element 11 by film formation, covers the organic electroluminescent element 11 and the dielectric multilayer film 21, and seals with a sealing adhesive and a sealing member (not shown).
  • a flexible substrate may be provided.
  • the flexible substrate 3 does not need to have light transmittance, and the sealing adhesive and the sealing flexible substrate have light transmittance. Yes. Even if it is such a structure, the effect similar to 2nd Embodiment can be acquired.
  • the lower electrode 11a or the upper electrode 11c is formed of a silver (Ag) thin film
  • the silver is formed adjacent to the base layer made of the specific material described in the first embodiment. (Ag)
  • FIG. 4 is a schematic cross-sectional view of the phototherapy device of the third embodiment.
  • the phototherapy device 1-3 according to the third embodiment shown in this figure includes a flexible substrate 3 having optical transparency, and a quantum dot-containing organic electroluminescent element (hereinafter referred to as the following) provided on one main surface of the flexible substrate 3.
  • QD-OLED 11 ′ a quantum dot-containing organic electroluminescent element
  • the QD-OLED 11 ′ is sealed with a sealing adhesive and a sealing flexible substrate, which are not shown here.
  • the flexible substrate 3 and the QD-OLED 11 ′ constitute a surface light emitting member 5-3, and a substrate surface on one main surface side of the flexible substrate 3 is a light emitting surface 5a.
  • the flexible substrate 3, the sealing adhesive, and the sealing flexible substrate are the same as those in the first embodiment. Therefore, the configuration of the QD-OLED 11 ′ will be described below.
  • the QD-OLED 11 ′ has a structure in which a lower electrode 11a, a light emitting functional layer 11b ′ formed using an organic material, and an upper electrode 11c are stacked in this order from the flexible substrate 3 side.
  • the light emitting functional layer 11b ′ includes at least a light emitting layer, and the light emitting functional layer 11b ′ having the light emitting layer contains quantum dots QD, which is different from a normal organic electroluminescent device.
  • the lower electrode 11a and the upper electrode 11c are the same as those of the organic electroluminescent element described in the first embodiment.
  • the lower electrode 11a may be a semi-transmissive / semi-reflective film, and the QD-OLED 11 ′ may thereby constitute a microcavity structure, as in the first embodiment.
  • the light emitting functional layer 11b ′ only needs to contain the quantum dots QD in any of the layers constituting the light emitting functional layer 11b ′, and the overall layer structure is not limited and is a general layer structure. It's okay.
  • the typical structure of the light emitting functional layer 11b ′ is the same as the structure of the light emitting functional layer exemplified in the first embodiment. When there are a plurality of light emitting layers, a non-light emitting intermediate layer is provided between the light emitting layers. May be.
  • the light emitting functional layer 11b ′ corresponds to the light emitting functional layer 10 described with reference to FIG.
  • any of the layers constituting the light emitting functional layer 11b ′ contains the quantum dots QD from which the emitted light h including the wavelength for achieving the therapeutic purpose of the phototherapy device 1-3 is obtained.
  • the quantum dot QD is a compound semiconductor fine particle having a size of several nanometers to several tens of nanometers, and has a sharp emission peak caused by energy absorption.
  • the emission wavelength of the quantum dots QD can be controlled with extremely high precision depending on the size of the particles, and the emission wavelength decreases as the size of the particles increases.
  • the quantum dots QD are composed of compounds such as CdSe, ZnSe, CdS, ZnO, ZnS, etc., and two or more kinds may be used in combination.
  • a quantum dot QD composed of CdSe and ZnS can emit light having a particle size of about 6.3 nm and an emission wavelength of 640 nm and a half-value width of less than 60 nm.
  • the light emitting layer in the light emitting functional layer 11b ′ is configured to emit light having a wavelength capable of effectively bringing the quantum dots QD contained in any of the layers constituting the light emitting functional layer 11b ′ into an excited state.
  • Such a light emitting layer preferably includes at least one host material and at least one light emitting dopant material.
  • the QD-OLED 11 ′ itself has a configuration in which thin films are stacked and has flexibility, and therefore follows the flexible substrate 3. Bend. For this reason, the light emitting surface 5a provided on the substrate surface of the flexible substrate 3 has flexibility to bend following the flexible substrate 3, and has a half-value width of 100 nm or less due to light emission of the quantum dots QD from the light emitting surface 5a. The emitted light h having a specific narrow band wavelength is emitted.
  • this phototherapy device 1-3 can obtain light emission having a sharp emission wavelength peak and a narrow half-value width by including quantum dots QD in the light emitting layer of the light emitting functional layer 11b '. Therefore, it is not necessary to use a band-pass filter for narrowing the emission light h, and the surface light emitting member 5-3 can be thinned, so that the flexibility of the light emitting surface 5a is easily secured.
  • the lower electrode 11a or the upper electrode 11c is formed of a silver (Ag) thin film
  • the silver is formed adjacent to the base layer made of the specific material described in the first embodiment. (Ag)
  • the phototherapy device 1-3 may be configured such that a band pass filter is provided on the substrate surface of the flexible substrate 3 on the opposite side to the QD-OLED 11 '. Moreover, it is good also as a structure which discharge
  • FIG. 5 is a schematic cross-sectional view of the phototherapy device of the fourth embodiment.
  • the phototherapy device 1-4 of the fourth embodiment shown in this figure includes a flexible substrate 3 having optical transparency, and a QD-OLED 11 ′ having a plurality of layers (here, two layers) on one main surface of the flexible substrate 3. -1 and QD-OLED 11'-2 are stacked.
  • the flexible substrate 3, the QD-OLED 11′-1, and the QD-OLED 11′-2 constitute a surface light emitting member 5-4, and the substrate surface on the one main surface side of the flexible substrate 3 becomes the light emitting surface 5a. ing.
  • the QD-OLED 11′-1 and the QD-OLED 11′-2 are sealed by a sealing adhesive and a sealing flexible substrate, which are not shown here.
  • the flexible substrate 3, the sealing adhesive, and the sealing flexible substrate may be the same as those in the first embodiment.
  • the multi-layer QD-OLED 11′-1 and QD-OLED 11′-2 have the same configuration as that of the QD-OLED described in the third embodiment.
  • the QD-OLED 11′-1, QD are sequentially arranged from the flexible substrate 3 side.
  • -OLEDs 11'-2 are provided in this order.
  • These QD-OLED 11'-1 and QD-OLED 11'-2 are stacked using one layer of intermediate electrode 11d as a common electrode, and generate emitted light h1 and emitted light h2 of different wavelengths.
  • the configurations of the QD-OLED 11'-1 and the QD-OLED 11'-2 will be described.
  • the QD-OLED 11′-1 provided on the flexible substrate 3 side includes a lower electrode 11a, a light emitting functional layer 11b′-1, and an intermediate electrode 11d.
  • the lower electrode 11a is used as an anode or a cathode of the QD-OLED 11'-1, and is an electrode having optical transparency as in the other embodiments.
  • the light emitting functional layer 11b'-1 has a light emitting layer, and this light emitting layer contains quantum dots QD1 from which emitted light h1 including a wavelength used for treatment is obtained.
  • the light emitting functional layer 11b'-1 corresponds to the light emitting functional layer 10 described with reference to FIG.
  • the intermediate electrode 11d is used as an upper electrode in the QD-OLED 11'-1, and is used as a cathode when the lower electrode 11a is an anode and as an anode when the lower electrode 11a is a cathode.
  • a case where the lower electrode 11a is an anode and the intermediate electrode 11d is a cathode is illustrated. Further, such an intermediate electrode 11d is provided as an electrode having optical transparency.
  • the above QD-OLED 11′-1 emits light from the light emitting functional layer 11b′-1 with respect to the other QD-OLED 11′-2 by applying a voltage between the lower electrode 11a and the intermediate electrode 11d.
  • a voltage between the lower electrode 11a and the intermediate electrode 11d are configured to be controlled independently.
  • the QD-OLED 11′-2 provided so as to overlap the QD-OLED 11′-1 includes an intermediate electrode 11d, a light emitting functional layer 11b′-2, and an upper electrode 11c.
  • the intermediate electrode 11d is used as a lower electrode in the QD-OLED 11'-2, and is used as a cathode when the upper electrode 11c is an anode and as an anode when the upper electrode 11c is a cathode.
  • the intermediate electrode 11d is an anode.
  • the light emitting functional layer 11b'-2 has a light emitting layer, and this light emitting layer contains quantum dots QD2 from which emitted light h2 including a wavelength used for treatment is obtained.
  • This light emitting functional layer 11b′-2 corresponds to the light emitting functional layer 10 described with reference to FIG. 1.
  • a plurality of light emitting functional layers 11b′ ⁇ are formed with respect to the flexible substrate 3. 1 and the light emitting functional layer 11b′-2 are laminated.
  • the upper electrode 11c is used as an anode or a cathode of the QD-OLED 11'-2, and is an electrode having a light reflecting function as in the other embodiments.
  • the emitted light h2 generated by the QD-OLED 11'-2 has a wavelength different from that of the emitted light h1 generated by the adjacent QD-OLED 11'-1.
  • the quantum dot QD2 used in the light emitting functional layer 11b′-2 of the QD-OLED 11′-2 and the quantum dot QD-1 used in the QD-OLED 11′-1 are different from each other in the compound or particle size constituting the quantum dot QD2.
  • the QD-OLED 11′-2 as described above applies a voltage between the intermediate electrode 11d and the upper electrode 11c, so that the other QD-OLED 11′-1 has a light emitting function layer 11b′-2.
  • the light emission is controlled independently.
  • the QD-OLED 11′-1 and the QD-OLED 11′-2 are each configured by laminating thin films and have flexibility. Therefore, the light emitting surface 5a provided on the substrate surface of the flexible substrate 3 is bent following the flexible substrate 3 and has flexibility. From the light emitting surface 5a that is flexibly bent, emitted light h1 and emitted light h2 having specific narrow band wavelengths with a half-value width of 100 nm or less due to light emission of the quantum dots QD1 and QD2 are respectively controlled and emitted.
  • the emitted light h1 and the emitted light h2 emitted from the light emitting surface 5a have different wavelengths, and light emission is controlled independently by voltage application to the lower electrode 11a, the intermediate electrode 11d, and the upper electrode 11c.
  • One phototherapy device 1-4 can be used for different purposes.
  • the lower electrode 11a is a transflective film. Then, by adjusting the film thickness of the light emitting functional layer 11b′-1 and the light emitting functional layer 11b′-2, the emitted light h1 obtained by the light emission of the quantum dot QD1 and the emitted light h2 obtained by the light emission of the quantum dot QD2 are It is set as the structure made to resonate between the electrode 11a and the upper electrode 11c.
  • the intermediate electrode 11d is an electrode having optical transparency.
  • the intermediate electrode 11d may be configured as an electrode having a light reflecting function, and the lower electrode 11a and the upper electrode 11c may be configured as light transmissive electrodes.
  • the light h1 emitted from the QD-OLED 11'-1 is emitted through the flexible substrate 3, and the QD-OLED 11'-2 is emitted through the upper electrode 11c.
  • light emitting surfaces along the flexible substrate 3 are provided on both sides of the QD-OLED 11′-1 and the QD-OLED 11′-2, and the emitted light h1 and the light having a specific narrow band wavelength different from each light emitting surface.
  • a reversible structure in which the light h2 is emitted can be used.
  • the film thickness adjustment of the light emitting functional layer 11b′-1 and the light emitting functional layer 11b′-2 are performed. It is possible to individually adjust the film thickness of each of them, and the degree of freedom in designing the microcavity structure can be increased.
  • the base layer made of the specific material described in the first embodiment.
  • the base layer is made of a material that can perform the functions necessary for the light emitting functional layer such as the charge transport function and the charge injection function among the organic materials containing nitrogen and sulfur. It is possible to prevent abnormal heat generation.
  • the QD-OLED 11′-1 and the QD-OLED 11′-2 stacked via the intermediate electrode 11d generate light that generates emitted light h1 and emitted light h2 having different wavelengths.
  • the treatment apparatus 1-4 has been described.
  • the QD-OLED 11'-1 and the QD-OLED 11'-2 may generate emitted light h1 and emitted light h2 having the same wavelength.
  • the microcavities of the QD-OLED 11′-1 and the QD-OLED 11′-2 are utilized. It is possible to perform treatment using high-luminance emitted light h1 + h2 and switch irradiation intensity.
  • the phototherapy device 1-4 having the configuration in which the two light emitting functional layers 11b'-1 and the light emitting functional layer 11b'-2 are stacked via the intermediate electrode 11d has been described.
  • the two light emitting functional layers 11b'-1 and the light emitting functional layer 11b'-2 may be stacked via an insulating intermediate layer instead of the intermediate electrode 11d.
  • the insulating intermediate layer is generally a charge generation layer, an electron extraction layer, a connection layer, or an intermediate insulating layer, and supplies electrons to the anode side adjacent layer and holes to the cathode side adjacent layer.
  • a known material structure can be used as long as it has a function. Such a configuration increases the distance between the electrodes and suppresses the occurrence of leakage. As a result, it is possible to prevent abnormal heat generation due to the leak in the phototherapy device having a high concern about the leak due to the high flexibility.
  • a bandpass filter is provided on the substrate surface of the flexible substrate 3 opposite to the QD-OLED 11′-1 and the QD-OLED 11′-2. It is also good. However, when the QD-OLED 11′-1 and the QD-OLED 11′-2 generate the emitted light h1 and the emitted light h2 having different wavelengths, the bandpass filter does not include a shielding filter and has two different wavelengths. It is assumed that dielectric multilayer portions that resonate light in the regions are stacked.
  • a dielectric multilayer film may be provided between the QD-OLED 11'-1 and the flexible substrate 3. This dielectric multilayer film is formed by laminating dielectric multilayer films that resonate light in two different wavelength regions.
  • the plurality of organic electroluminescent elements 11 to be stacked generate light having different wavelengths.
  • the band-pass filter 13 is not provided with a shielding filter, and resonates light in two different wavelength regions obtained in the stacked organic electroluminescent elements.
  • the laminated dielectric multilayer film portion is used.
  • the dielectric multilayer film 21 uses light that resonates light in two different wavelength regions or light of the same wavelength.
  • FIG. 6 is a schematic cross-sectional view of the phototherapy device of the fifth embodiment.
  • the phototherapy device 1-5 of the fifth embodiment shown in this figure includes a light-transmitting flexible substrate 3 and a light-emitting element (hereinafter, referred to as a quantum dot light-emitting layer provided on one main surface of the flexible substrate 3).
  • the flexible substrate 3 and the QLED 11 ′′ constitute a surface light emitting member 5-5, and the substrate surface on one main surface side of the flexible substrate 3 serves as a light emitting surface 5a. Yes.
  • the QLED 11 ′′ is sealed with a sealing adhesive and a sealing flexible substrate (not shown here). Of these, the flexible substrate 3, the sealing adhesive, and the sealing flexible The substrate may be the same as that of the first embodiment. Therefore, the configuration of the QLED 11 ′′ will be described below.
  • the QLED 11 ′′ has a configuration in which a lower electrode 11a, a light emitting functional layer 11b ′′ configured using a quantum dot and an organic material, and an upper electrode 11c are stacked in order from the flexible substrate 3 side.
  • the light emitting functional layer 11b ′′ is characterized by having at least the quantum dot light emitting layer 51.
  • the light emitting functional layer 11b ′′ corresponds to the light emitting functional layer 10 described with reference to FIG. .
  • the lower electrode 11a and the upper electrode 11c are the same as those of the organic electroluminescent element described in the first embodiment.
  • the lower electrode 11a may be a semi-transmissive / semi-reflective film, whereby the QLED 11 ′′ may constitute a microcavity structure.
  • the light-emitting functional layer 11b ′′ only needs to include the quantum dot light-emitting layer 51 configured using the quantum dots QD, and the overall layer structure is the quantum structure of the light-emitting layer of the organic electroluminescent element described in the first embodiment.
  • the structure may be replaced with the dot light-emitting layer 51.
  • the quantum dot light-emitting layer 51 is formed by, for example, applying a dispersion of quantum dots QD, and the quantum dots QD constituting the quantum dot light-emitting layer 51 are formed. This is the same as that of the third embodiment, and the emitted light h including the wavelength for achieving the therapeutic purpose of the phototherapy device 1-5 can be obtained.
  • the configuration when the lower electrode 11a is configured as a cathode made of ITO (indium tin oxide) is as follows in order from the lower electrode 11a side.
  • ITO indium tin oxide
  • the quantum dot light-emitting layer 51 can be provided without damage to the base.
  • a quantum dot QD composed of CdSe and ZnS can emit light having a particle diameter of about 6.3 nm, an emission wavelength of 640 nm, and a half-value width of less than 60 nm.
  • the QLED 11 ′′ itself has a configuration in which thin films are laminated and has flexibility, so that it bends following the flexible substrate 3.
  • the light emitting surface 5a provided on the substrate surface of the flexible substrate 3 has flexibility to bend following the flexible substrate 3, and the half-value width of 100 nm or less due to light emission of the quantum dots QD from the light emitting surface 5a.
  • the emitted light h having a specific narrow band wavelength having a high therapeutic effect uniformly over a wide range of treatment sites is emitted. Therefore, it is possible to expect a high therapeutic effect to be achieved for a wide range of treatment sites.
  • this phototherapy device 1-5 can obtain light emission having a sharp emission wavelength peak and a narrow half-value width because the light emitting functional layer 11b ′′ has the quantum dot light emitting layer 51. Therefore, the light emission light can be obtained. It is not necessary to use a bandpass filter for narrowing h, and the surface light emitting member 5-5 can be thinned, so that the flexibility of the light emitting surface 5a is easily secured.
  • the lower electrode 11a or the upper electrode 11c is formed of a silver (Ag) thin film
  • the silver is formed adjacent to the base layer made of the specific material described in the first embodiment. (Ag)
  • the phototherapy device 1-5 may be configured such that a band pass filter is provided on the substrate surface of the flexible substrate 3 opposite to the QLED 11 ′′. It is good also as a structure which emits the emitted light h from the opposite side to the flexible substrate 3, combining with the structure of the modification 1. Furthermore, combining with 2nd Embodiment, a dielectric multilayer film is provided between QLED11 "and the flexible substrate 3. May be.
  • the phototherapy device 1-5 of the fifth embodiment described above may be configured by laminating QLEDs that emit light having different wavelengths in combination with the fourth embodiment, and may be used for a plurality of different treatment purposes. Is possible. In addition, if the QLEDs that emit light having the same wavelength are stacked, abnormal heat generation due to leakage can be prevented.
  • FIG. 7 is a schematic cross-sectional view of the phototherapy device of the sixth embodiment.
  • the phototherapy device 1-6 of the sixth embodiment shown in this figure is different from the phototherapy device 1-1 of the first embodiment described with reference to FIG. It is in place using.
  • Other configurations are the same as those of the first embodiment. Therefore, the structure of the quantum dot film 61 is demonstrated here and description of another component is abbreviate
  • the quantum dot film 61 converts light generated in the organic electroluminescent element 11 into emitted light h including a wavelength for achieving the therapeutic purpose of the phototherapy device 1-6.
  • Such a quantum dot film 61 is formed, for example, by applying a dispersion of quantum dots QD.
  • the quantum dots QD constituting the quantum dot film 61 are the same as those in the third embodiment, and the light emitting light h including the wavelength for achieving the therapeutic purpose of the phototherapy device 1-6 can be obtained. It is.
  • a quantum dot film using a quantum dot QD composed of CdSe and ZnS and having a particle size of about 6.3 nm is used. 61 may be configured.
  • the light emitting surface 5a configured by the surface of the quantum dot film 61 has flexibility to bend following the flexible substrate 3. And the emitted light h of the specific narrow band wavelength below the half value width 100nm which was wavelength-converted in the quantum dot film 61 is emitted from this light emission surface 5a.
  • the first embodiment it is possible to irradiate the light-emitting light h having a specific narrow band wavelength having a high therapeutic effect uniformly over a wide range of treatment sites. On the other hand, it is possible to expect to achieve a high therapeutic effect.
  • the lower electrode 11a is configured as an electrode having a light reflecting function
  • the upper electrode 11c is configured as an electrode having optical transparency
  • the quantum dot film 61 is formed on the upper electrode 11c side of the organic electroluminescent element 11 by film formation. What is necessary is just to set it as the provided structure.
  • the flexible substrate 3 does not need to have light transmittance. Even if it is such a structure, the effect similar to 6th Embodiment can be acquired.
  • the sixth embodiment may be combined with the fourth embodiment to have a configuration in which two organic electroluminescent elements are stacked.
  • the laminated structure of the organic electroluminescent elements is sandwiched between the two quantum dot films 61, and the intermediate electrode commonly used in the laminated organic electroluminescent elements is a reflective electrode, and the lower electrode and the upper electrode are transparent electrodes.
  • the phototherapy apparatus of the reversible structure from which the light by which the wavelength conversion was carried out with the respectively different quantum dot film 61 is taken out from the flexible substrate 3 side and the other side is obtained.
  • the lower electrode 11a or the upper electrode 11c is formed of a silver (Ag) thin film
  • it is made of the specific material described in the first embodiment.
  • FIG. 8 is a schematic cross-sectional view of the phototherapy device of the seventh embodiment.
  • the phototherapy device 1-7 of the seventh embodiment shown in this figure includes a light guide plate 71 configured as a flexible substrate, a light source 73 provided at an edge of the light guide plate 71, and one main surface side of the light guide plate 71. And a quantum dot portion 75 provided on the surface. Further, the phototherapy device 1-7 includes a reflective layer 77 provided on the other main surface side of the light guide plate 71.
  • the light emitting plate 5, the light source 73, and the quantum dot portion 75 constitute a surface light emitting member 5-7, and the surface of the quantum dot portion 75 provided along the substrate surface of the light guide plate 71 is the substrate surface of the flexible substrate.
  • the light emitting surface 5a bends flexibly along. Details of each component will be described below.
  • the light guide plate 71 is configured as a flexible substrate, and a material having a light transmission property that transmits light generated by the light source 73 is selected and used from the materials previously shown as the material constituting the flexible substrate 3. It is done. Among these materials, acrylic resins, polycarbonate resins, and cycloolefin resins are preferably used particularly for resin films.
  • the light source 73 emits light for causing the quantum dots QD constituting the quantum dot portion 75 to emit light.
  • a light source 73 for example, a blue light emitting LED element is used.
  • the light source 73 is arranged in a state in which light is introduced from the edge of the light guide plate 71 to the light guide plate 71.
  • Such a light source 73 is disposed at the edge of the light guide plate 71 while being accommodated in the reflection cup 73a, and the light emitted from the light source 73 is reflected by the inner wall of the reflection cup 73a to effectively guide the light. It is configured to be introduced into the light plate 71.
  • the quantum dot part 75 is for modulating the light emitted from the light source 73 to a wavelength for achieving a therapeutic purpose.
  • the quantum dot portion 75 is a layered one provided on the light exit surface side of the light guide plate 71 and is provided in a state of covering the entire surface on the light exit surface side of the light guide plate 71.
  • Such a quantum dot portion 75 is, for example, a quantum dot film in which quantum dots QD are dispersed and applied in a resin, or such a quantum dot film is sandwiched and bonded with a barrier film, It follows the light guide plate 71 and bends flexibly.
  • the surface of the quantum dot portion 75 is a light emitting surface 5a that is flexibly bent along the substrate surface of the light guide plate 71 configured as a flexible substrate.
  • the quantum dots QD constituting the quantum dot unit 75 are the same as those in the third embodiment, and the light emitted from the light source 73 is used to achieve the therapeutic purpose of the phototherapy device 1-7.
  • the light is converted into emitted light h including a wavelength.
  • the reflection layer 77 is a layer arranged on the outer peripheral surface of the light guide plate 71 so as to cover the entire surface except the light source 73 and the quantum dot portion 75. Such a reflective layer 77 is bent flexibly following the light guide plate 71 together with the quantum dot portion 75. The reflective layer 77 does not interfere with the bending of the light guide plate 71 and the quantum dot portion 75, and can reflect the light from the light source 73 toward the quantum dot portion 75 side without waste, with respect to the light guide plate 71. It may be provided independently.
  • FIG. 9 is a schematic cross-sectional view of the phototherapy device of the eighth embodiment.
  • the phototherapy device 1-8 of the eighth embodiment shown in this figure is a modification of the phototherapy device of the seventh embodiment described with reference to FIG.
  • This phototherapy device 1-8 is different from the phototherapy device of the seventh embodiment in that a quantum dot portion 81 is provided between the light guide plate 71 and the light source 73, and the other configuration is the seventh embodiment. It is the same as the form.
  • the surface light emitting member 5-8 is constituted by the light guide plate 71, the light source 73, and the quantum dot portion 81, and the substrate surface of the light guide plate 71 becomes the light emitting surface 5a that is flexibly bent. ing.
  • the structure of the quantum dot part 81 is demonstrated and description of another component is abbreviate
  • the quantum dot portion 81 is for modulating the light emitted from the light source 73 to a wavelength for achieving the therapeutic purpose, and is provided between the light guide plate 71 and the light source 73.
  • the quantum dot portion 81 is, for example, a transparent tube in which the quantum dots QD are sealed.
  • the quantum dot portion 81 is accommodated in the reflection cup 73 a together with the light source 73, and between the light source 73 and the light guide plate 71 at the edge of the light guide plate 71. Is arranged.
  • the quantum dots QD constituting the quantum dot portion 81 are the same as those in the third embodiment, and the light emitted from the light source 73 is used to achieve the therapeutic purpose of the phototherapy device 1-8.
  • the light is converted into emitted light h including a wavelength.
  • the emitted light h converted by the above quantum dot portion 81 is guided in the light guide plate 71, reflected by the reflection layer 77, and emitted from the light emitting surface 5 a configured by one main surface of the light guide plate 71.
  • the phototherapy device 1-8 can reduce the thickness of the surface light emitting member 5-8 by providing the quantum dot portion 81 at the edge of the light guide plate 71. Therefore, the phototherapy device 1-8 is different from the phototherapy device of the seventh embodiment. In comparison, the light emitting surface 5a is easy to ensure the flexibility.
  • FIG. 10 is a schematic cross-sectional view of the phototherapy device of the ninth embodiment.
  • the phototherapy device 1-9 of the ninth embodiment shown in this figure is a modification of the phototherapy device of the fourth embodiment described with reference to FIG.
  • This phototherapy device 1-4 differs from the phototherapy device of the fourth embodiment in that it is a multi-layer (two layers here) organic electroluminescence device 11-1 and organic electroluminescence device that do not use quantum dots QD. 11-2 is laminated, and the other configurations are the same.
  • the multi-layer organic electroluminescent device 11-1 and the organic electroluminescent device 11-2 have the same configuration as the organic electroluminescent device described in the first embodiment, and each has a microcavity structure. To do. These are provided in order of the organic electroluminescent element 11-1 and the organic electroluminescent element 11-2 in this order from the flexible substrate 3 side.
  • the organic electroluminescent element 11-1 and the organic electroluminescent element 11-2 are stacked using a single layer of the intermediate electrode 11d as a common electrode, and generate emitted light h1 and emitted light h2 having different wavelengths. .
  • the intermediate electrode 11d is used as an upper electrode in the organic electroluminescent element 11-1, and is used as a cathode when the lower electrode 11a is an anode and as an anode when the lower electrode 11a is a cathode.
  • the intermediate electrode 11d is used as a lower electrode in the organic electroluminescent element 11-2, and is used as a cathode when the upper electrode 11c is an anode and as an anode when the upper electrode 11c is a cathode.
  • a case where the upper electrode 11c is an anode and the intermediate electrode 11d is an anode is shown.
  • an intermediate electrode 11d is provided as an electrode having optical transparency.
  • the phototherapy device 1-9 as described above is configured such that the organic electroluminescence element 11-1 and the organic electroluminescence element 11-2 are controlled to emit light independently of each other.
  • the phototherapy device 1-9 of the ninth embodiment has the reversible structure described in the fourth embodiment by using the intermediate electrode 11d as an electrode having a light reflecting function, as in the configuration of the fourth embodiment. be able to.
  • a plurality of layers (here, two layers) of organic electroluminescent elements 11-1 and 11-2 that resonate light of the same wavelength may be stacked.
  • the phototherapy device 1-9 of the ninth embodiment may be combined with other embodiments and modifications, and may be provided with a band-pass filter or a dielectric multilayer film, and each effect can be obtained. .
  • FIG. 11 is a schematic cross-sectional view of the phototherapy device of the tenth embodiment.
  • a phototherapy device 1-10 of the tenth embodiment shown in this figure is a modification of the phototherapy devices of the fourth and ninth embodiments.
  • This phototherapy device 1-10 differs from the phototherapy devices of the fourth embodiment and the ninth embodiment in that a plurality of layers (here, two layers) of organic electroluminescent elements 11-1 that do not use quantum dots QD.
  • the organic electroluminescent element 11-2 is laminated so as to share the insulating intermediate layer 11e.
  • Other configurations are the same as those of the fourth embodiment.
  • the lower electrode 11a, the light emitting functional layer 11b-1, the insulating intermediate layer 11e, the light emitting functional layer 11b-2, and the upper electrode 11c are laminated in this order from the flexible substrate 3 side. It is a configuration.
  • the insulating intermediate layer is generally a charge generation layer, an electron extraction layer, a connection layer, or an intermediate insulating layer, and supplies electrons to the anode side adjacent layer and holes to the cathode side adjacent layer.
  • a known material structure can be used as long as it has a function. Such a configuration increases the distance between the electrodes and suppresses the occurrence of leakage. As a result, it is possible to prevent abnormal heat generation due to the leak in the phototherapy device having a high concern about the leak due to the high flexibility.
  • the phototherapy device 1-10 of the tenth embodiment also has a plurality of layers (here, two layers) of organic electroluminescent elements 11-1 that resonate light of the same wavelength, and the organic, similarly to the configuration of the fourth embodiment.
  • the electroluminescent element 11-2 may be laminated, and further combinations with other embodiments and modifications are possible, and the respective effects can be obtained.
  • Quantum dots QD are particles of a predetermined size having a quantum confinement effect.
  • the particle diameter of the quantum dots QD is specifically 1 to 20 nm, preferably 1 to 10 nm.
  • the energy level E of such fine particles is generally expressed by the following formula (1) where the Planck constant is “h”, the effective mass of electrons is “m”, and the radius of the fine particles is “R”.
  • the band gap of the fine particles increases in proportion to “R-2”, and the so-called quantum dot effect is obtained.
  • the band gap value of a quantum dot can be controlled by controlling and defining the particle diameter of the quantum dot. That is, by controlling and defining the particle diameter of the fine particles, it is possible to provide diversity not found in ordinary atoms.
  • a known method can be used.
  • the quantum dot particles are observed with a transmission electron microscope (TEM), and the number average particle size of the particle size distribution is obtained therefrom, or the particle size distribution of the quantum dots is measured by a dynamic light scattering method.
  • TEM transmission electron microscope
  • examples thereof include a method for obtaining the number average particle size and a method for deriving the particle size distribution from the spectrum obtained by the X-ray small angle scattering method using the particle size distribution simulation calculation of the quantum dots.
  • a particle size measuring device (“ZETASIZER Nano Series Nano-ZS” manufactured by Malvern) is used.
  • composition material of quantum dot QD examples include the following. (1) Simple elements of Group 14 elements of the periodic table such as carbon, silicon, germanium and tin
  • Group 15 element of periodic table such as phosphorus (black phosphorus)
  • Group 16 element of periodic table such as selenium and tellurium
  • Tin oxide (IV) SnO2
  • tin sulfide (II, IV) Sn (II) Sn (IV) S3
  • selenium Periods such as tin (II) halide (SnSe), tin (II) telluride (SnTe), lead (II) sulfide (PbS), lead (II) selenide (PbSe), lead telluride (II) (PbTe)
  • CdO cadmium oxide
  • CdS cadmium sulfide
  • CdSe cadmium selenide
  • telluride Compound of periodic table group 12 element and periodic table group 16 element such as cadmium (CdTe), mercury sulfide (HgS), mercury selenide (HgSe), mercury telluride (HgTe) (or II-VI group compound semiconductor)
  • Arsenic sulfide (III) (As2S3), Arsenic selenide (III) (As2Se3), Arsenic telluride (III) (As2Te3), Antimony sulfide (III) (Sb2S3), Antimony selenide (III) (Sb2Se3)
  • Periodic table group 15 elements such as antimony telluride (III) (Sb2Te3), bismuth sulfide (III) (Bi2S3), bismuth selenide (III) (Bi2Se3), bismuth telluride (III) (Bi2Te3) Compounds with Group 16 elements
  • Periodic group such as manganese oxide (II) (MnO), periodic table group 7 element and periodic table group 16 element, molybdenum sulfide (IV) (MoS2), tungsten oxide (IV) (WO2), etc.
  • II manganese oxide
  • MoS2 molybdenum sulfide
  • WO2 tungsten oxide
  • Vanadium oxide (II) VO
  • vanadium oxide (IV) VO2
  • tantalum oxide (V) Ta2O5
  • Si, Ge, GaN, GaP, InN, InP, Ga2O3, Ga2S3, In2O3, In2S3, ZnO, ZnS, CdO, and CdS are more preferable. Since these substances do not contain highly toxic negative elements, they are excellent in resistance to environmental pollution and safety to living organisms, and are advantageous for forming a light emitting device. Of these materials, CdSe, ZnSe, and CdS are preferable in terms of light emission stability. From the viewpoints of luminous efficiency, high refractive index, and safety, ZnO and ZnS quantum dots are preferable. Moreover, said material may be used by 1 type and may be used in combination of 2 or more type.
  • the above-described quantum dots QD may be doped with a small amount of various elements as impurities as necessary.
  • the surface of the quantum dot QD is preferably coated with an inert inorganic coating layer (shell) or a coating (capping layer) made of an organic ligand. That is, the quantum dot QD has a) a core / shell structure having core particles and a shell, or b) a structure constituted by core particles and a capping layer, or c) a capping layer around the core / shell structure. A covered structure is preferable.
  • the compound constituting the shell has a larger band gap than the compound constituting the core particle.
  • the core / shell structure is preferably formed of at least two kinds of compounds, and the gradient structure may be formed of two or more kinds of compounds.
  • the quantum dots QD configured as described above can effectively prevent the aggregation of the quantum dots QD in the coating liquid, improve the dispersibility of the quantum dots QD, and improve the luminance efficiency. It is possible to suppress the color shift that occurs when continuously driven. Further, the light emission characteristics can be stably obtained due to the presence of the shell and the capping layer.
  • the quantum dot QD having a core / shell structure can surely carry a functional surface modifier as described later near the surface of the quantum dot QD.
  • the thickness of the shell is not particularly limited, but is preferably 0.1 to 10 nm, and more preferably 0.1 to 5 nm. In general, if the emission color can be controlled by the size of the quantum dots QD and the shell thickness is within the above range, the thickness of the shell is less than one core particle from a thickness corresponding to several atoms. The thickness is sufficient to fill the core particles with a high density, and a sufficient amount of light emission can be obtained.
  • the presence of the shell can suppress the transfer of non-emissive electron energy due to the defects existing on the surface of the core particles and the electron traps on the dangling bonds, thereby suppressing the decrease in quantum efficiency.
  • a functional surface modifier is preferably attached as a capping agent (organic ligand) constituting the capping layer near the surface of the quantum dot.
  • a functional surface modifier is preferably attached as a capping agent (organic ligand) constituting the capping layer near the surface of the quantum dot.
  • the functional surface modifier as described above is directly attached to the surface of the core particle, or attached to the surface of the shell if the quantum dot QD has a core / shell structure.
  • Trialkylphosphines such as tripropylphosphine, tributylphosphine, trihexylphosphine, and trioctylphosphine.
  • Polyoxyethylene alkylphenyl ethers such as polyoxyethylene n-octylphenyl ether and polyoxyethylene n-nonylphenyl ether.
  • Tertiary amines such as tri (n-hexyl) amine, tri (n-octyl) amine and tri (n-decyl) amine.
  • Organic phosphorus compounds such as tripropylphosphine oxide, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, tridecylphosphine oxide.
  • Organic nitrogen compounds such as nitrogen-containing aromatic compounds of pyridine, lutidine, collidine, and quinolines.
  • Aminoalkanes such as hexylamine, octylamine, decylamine, dodecylamine, tetradecylamine, hexadecylamine, octadecylamine and the like.
  • Dialkyl sulfides such as dibutyl sulfide.
  • Dialkyl sulfoxides such as dimethyl sulfoxide and dibutyl sulfoxide.
  • Organic sulfur compounds such as sulfur-containing aromatic compounds such as thiophene.
  • Higher fatty acids such as palmitic acid, stearic acid, and oleic acid.
  • Alcohols (12) Polyoxyethylene alkyl ethers such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, and polyoxyethylene oleyl ether.
  • Polyethylene glycol diesters such as polyethylene glycol dilaurate and polyethylene glycol distearate.
  • Sorbitan fatty acid esters (15) Fatty acid-modified polyesters. (16) Tertiary amine-modified polyurethanes. (17) Polyethyleneimines.
  • the functional surface modifier is preferably a substance that is coordinated and stabilized by the fine particles in the high-temperature liquid phase. 1) to (11) are preferred.
  • the dispersibility of the quantum dots QD in the coating solution can be made particularly excellent.
  • the shape of the quantum dots QD formed at the time of manufacturing the quantum dots QD can be made higher in sphericity, and the particle size distribution of the quantum dots QD can be made sharper.
  • Method for producing quantum dots include the following conventional methods for producing quantum dots and the like, but are not limited thereto, and any known method can be used.
  • raw material aqueous solution for example, alkanes such as n-heptane, n-octane, isooctane, or benzene, toluene
  • alkanes such as n-heptane, n-octane, isooctane, or benzene
  • Inverted micelles which exist as reverse micelles in non-polar organic solvents such as aromatic hydrocarbons such as xylene, and crystal growth in this reverse micelle phase, inject a thermally decomposable raw material into a high-temperature liquid-phase organic medium
  • examples thereof include a hot soap method for crystal growth and a solution reaction method involving crystal growth at a relatively low temperature using an acid-base reaction as a driving force, as in the hot soap method.
  • any method can be used from these production methods, and among these, the liquid phase production method is preferable.
  • a surface modifier that exists on the surface during the synthesis of quantum dots is referred to as an initial surface modifier.
  • examples of the initial surface modifier in the hot soap method include trialkylphosphines, trialkylphosphine oxides, alkylamines, dialkyl sulfoxides, alkanephosphonic acid and the like. These initial surface modifiers are preferably exchanged for the above-described functional surface modifiers by an exchange reaction.
  • the initial surface modifier such as trioctyl phosphine oxide obtained by the hot soap method described above is obtained by performing the functional surface modification described above by an exchange reaction performed in a liquid phase containing the functional surface modifier. It is possible to replace it with an agent.
  • quantum dots As an example of manufacturing a quantum dot, the production of a quantum dot in which a core / shell structure of CdSe / ZnS is covered with a capping layer to which a functional surface modifier (capping agent) is attached will be described.
  • TOPO trioctylphosphine oxide
  • TOPSe trioctylphosphine selenide
  • ⁇ Film formation using quantum dots> By applying a mixture of a material such as a hole transport material, an electron transport material, and a light emitting layer material and a quantum dot by spin coating or the like, a quantum dot layer separated from various material layers can be formed at the interface.
  • a dry method such as a microcontact printing method for transferring a self-assembled monolayer onto a substrate using a patterned PDMS (polydimethylsiloxane) stamp or the like, or a coating solution containing quantum dots Examples of the method include spin coating.
  • the phototherapy device of the present invention described in the above embodiment is used for treatment by irradiation with light having a wavelength selected for a disease, so-called phototherapy, but is not limited thereto.
  • the therapeutic effect of the therapeutic agent is provided by providing a layer containing a therapeutic agent such as a menthol of ship medicine, an aroma utilizing fever, and a moisturizer on the light emitting surface side in contact with the patient. It is good also as a device which served as both.
  • the phototherapy device of the present invention may have a configuration in which an adhesive layer is further provided on the light emitting surface 5a side in contact with the patient, in addition to the configurations of the above-described embodiments and modifications.
  • a configuration in which a timer for preventing overdoing of the element and the light source is provided, and a function of detecting heat generation and automatically turning off light from the element and the light source at the time of heating may be provided.
  • Phototherapy device 3 ... Flexible substrate 5, 5-1, 5-2, 5-3, 5-4, 5-5, 5-6, 5-7, 5-8 ... surface light emitting member, 5a ... light emitting surface, h, h1, h2 ... Emission light, 11 ... organic electroluminescence device, 11 '... QD-OLED, 11 "... QLED, 10, 11b, 11b', 11b” ... light emitting functional layer, 13 ... band bath filter, 17 ... adhesive for sealing, DESCRIPTION OF SYMBOLS 19 ... Flexible board

Landscapes

  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biomedical Technology (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Animal Behavior & Ethology (AREA)
  • Pathology (AREA)
  • Public Health (AREA)
  • Veterinary Medicine (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Radiation-Therapy Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Optical Filters (AREA)

Abstract

 La présente invention concerne un appareil de photothérapie qui permet d'obtenir un effet thérapeutique élevé sur une large zone de traitement. Cet appareil de photothérapie est pourvu d'un substrat flexible, et d'un élément de surface d'émission de lumière construit au moyen du substrat flexible, ledit élément de surface d'émission de lumière possédant une surface d'émission de lumière apte à se plier de manière flexible le long de la surface du substrat flexible, et émettant une lumière émise, dans une plage de longueur d'onde présentant une demi-largeur qui ne dépasse pas 100 nm, depuis la surface d'émission de lumière.
PCT/JP2015/065764 2014-06-11 2015-06-01 Appareil de photothérapie WO2015190335A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016527750A JPWO2015190335A1 (ja) 2014-06-11 2015-06-01 光治療装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014120607 2014-06-11
JP2014-120607 2014-06-11

Publications (1)

Publication Number Publication Date
WO2015190335A1 true WO2015190335A1 (fr) 2015-12-17

Family

ID=54833433

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2015/065764 WO2015190335A1 (fr) 2014-06-11 2015-06-01 Appareil de photothérapie

Country Status (2)

Country Link
JP (1) JPWO2015190335A1 (fr)
WO (1) WO2015190335A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017110194A1 (fr) * 2015-12-24 2017-06-29 シャープ株式会社 Dispositif d'irradiation de lumière et machine de photothérapie
JP2018050046A (ja) * 2016-09-21 2018-03-29 晶元光電股▲ふん▼有限公司Epistar Corporation 治療に使用可能な発光モジュール
WO2018139367A1 (fr) * 2017-01-26 2018-08-02 シャープ株式会社 Dispositif photothérapeutique
WO2019092799A1 (fr) * 2017-11-08 2019-05-16 シャープ株式会社 Composition liquide, procédé de production d'élément de conversion photoélectrique et élément de conversion photoélectrique
WO2019171556A1 (fr) * 2018-03-08 2019-09-12 シャープ株式会社 Élément, dispositif électronique et procédé de production d'élément
WO2019186633A1 (fr) * 2018-03-26 2019-10-03 シャープ株式会社 Composition liquide, procédé de production d'élément de conversion photoélectrique, et élément de conversion photoélectrique
KR102097047B1 (ko) * 2018-11-20 2020-04-03 주식회사 엠아이티에스 Led를 이용한 광치료 장치
JP2020516045A (ja) * 2017-04-11 2020-05-28 ティーシーエル テクノロジー グループ コーポレーションTCL Technology Group Corporation 架橋ナノ粒子薄膜及び製造方法、並びに薄膜光電子デバイス
CN111415599A (zh) * 2020-04-26 2020-07-14 恩利克(浙江)智能装备有限公司 一种可折叠量子点光色转换膜片及其制造方法和显示屏
WO2021240621A1 (fr) * 2020-05-26 2021-12-02 シャープ株式会社 Dispositif d'affichage et procédé de production d'un dispositif d'affichage

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043299A1 (fr) * 2005-09-22 2007-04-19 Matsushita Electric Works, Ltd. Élément électroluminescent organique et son procédé de fabrication
JP2012514498A (ja) * 2009-01-05 2012-06-28 プレクストロニクス インコーポレイテッド 有機発光ダイオード光線療法照明システム
JP2013062200A (ja) * 2011-09-15 2013-04-04 Konica Minolta Holdings Inc 携帯型発光器具
JP2013531883A (ja) * 2010-05-27 2013-08-08 メルク パテント ゲーエムベーハー 量子ドットを含む組成物
JP2014506503A (ja) * 2011-02-03 2014-03-17 トリア ビューティ インコーポレイテッド 放射線ベースの皮膚科治療のデバイスおよび方法
JP2014510393A (ja) * 2011-01-27 2014-04-24 日東電工株式会社 場合によっては置換されているテルフェニルおよびクアテルフェニル化合物を含有する光線療法装置および方法
WO2014073313A1 (fr) * 2012-11-09 2014-05-15 ソニー株式会社 Dispositif d'éclairage et dispositif d'affichage
WO2014084170A1 (fr) * 2012-11-28 2014-06-05 コニカミノルタ株式会社 Électrode transparente, dispositif électronique, et élément électroluminescent organique

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007043299A1 (fr) * 2005-09-22 2007-04-19 Matsushita Electric Works, Ltd. Élément électroluminescent organique et son procédé de fabrication
JP2012514498A (ja) * 2009-01-05 2012-06-28 プレクストロニクス インコーポレイテッド 有機発光ダイオード光線療法照明システム
JP2013531883A (ja) * 2010-05-27 2013-08-08 メルク パテント ゲーエムベーハー 量子ドットを含む組成物
JP2014510393A (ja) * 2011-01-27 2014-04-24 日東電工株式会社 場合によっては置換されているテルフェニルおよびクアテルフェニル化合物を含有する光線療法装置および方法
JP2014506503A (ja) * 2011-02-03 2014-03-17 トリア ビューティ インコーポレイテッド 放射線ベースの皮膚科治療のデバイスおよび方法
JP2013062200A (ja) * 2011-09-15 2013-04-04 Konica Minolta Holdings Inc 携帯型発光器具
WO2014073313A1 (fr) * 2012-11-09 2014-05-15 ソニー株式会社 Dispositif d'éclairage et dispositif d'affichage
WO2014084170A1 (fr) * 2012-11-28 2014-06-05 コニカミノルタ株式会社 Électrode transparente, dispositif électronique, et élément électroluminescent organique

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108472495B (zh) * 2015-12-24 2020-02-07 夏普株式会社 光照射装置以及光治疗仪
CN108472495A (zh) * 2015-12-24 2018-08-31 夏普株式会社 光照射装置以及光治疗仪
WO2017110194A1 (fr) * 2015-12-24 2017-06-29 シャープ株式会社 Dispositif d'irradiation de lumière et machine de photothérapie
US10709898B2 (en) 2015-12-24 2020-07-14 Sharp Kabushiki Kaisha Light irradiating device and phototherapy machine
JP2018050046A (ja) * 2016-09-21 2018-03-29 晶元光電股▲ふん▼有限公司Epistar Corporation 治療に使用可能な発光モジュール
WO2018139367A1 (fr) * 2017-01-26 2018-08-02 シャープ株式会社 Dispositif photothérapeutique
CN110234397A (zh) * 2017-01-26 2019-09-13 夏普株式会社 光治疗仪
JPWO2018139367A1 (ja) * 2017-01-26 2019-11-07 シャープ株式会社 光治療器
CN110234397B (zh) * 2017-01-26 2021-11-09 夏普株式会社 光治疗仪
US11778891B2 (en) 2017-04-11 2023-10-03 Tcl Technology Group Corporation Crosslinked nanoparticle thin film, preparation method thereof, and thin film optoelectronic device having the same
JP7075476B2 (ja) 2017-04-11 2022-05-25 ティーシーエル テクノロジー グループ コーポレーション 架橋ナノ粒子薄膜及び製造方法、並びに薄膜光電子デバイス
JP2020516045A (ja) * 2017-04-11 2020-05-28 ティーシーエル テクノロジー グループ コーポレーションTCL Technology Group Corporation 架橋ナノ粒子薄膜及び製造方法、並びに薄膜光電子デバイス
WO2019092799A1 (fr) * 2017-11-08 2019-05-16 シャープ株式会社 Composition liquide, procédé de production d'élément de conversion photoélectrique et élément de conversion photoélectrique
WO2019171556A1 (fr) * 2018-03-08 2019-09-12 シャープ株式会社 Élément, dispositif électronique et procédé de production d'élément
CN111868952A (zh) * 2018-03-26 2020-10-30 夏普株式会社 液体组合物、光电转换元件的制造方法以及光电转换元件
US11377591B2 (en) 2018-03-26 2022-07-05 Sharp Kabushiki Kaisha Liquid composition, photoelectric conversion element production method, and photoelectric conversion element
WO2019186633A1 (fr) * 2018-03-26 2019-10-03 シャープ株式会社 Composition liquide, procédé de production d'élément de conversion photoélectrique, et élément de conversion photoélectrique
KR102097047B1 (ko) * 2018-11-20 2020-04-03 주식회사 엠아이티에스 Led를 이용한 광치료 장치
CN111415599A (zh) * 2020-04-26 2020-07-14 恩利克(浙江)智能装备有限公司 一种可折叠量子点光色转换膜片及其制造方法和显示屏
WO2021240621A1 (fr) * 2020-05-26 2021-12-02 シャープ株式会社 Dispositif d'affichage et procédé de production d'un dispositif d'affichage

Also Published As

Publication number Publication date
JPWO2015190335A1 (ja) 2017-04-20

Similar Documents

Publication Publication Date Title
WO2015190335A1 (fr) Appareil de photothérapie
JP6314981B2 (ja) 光学材料、光学フィルム及び発光デバイス
CN107810250B (zh) 核-壳纳米片膜和使用其的显示装置
JPWO2014196319A1 (ja) 光学材料、光学フィルム及び発光デバイス
JP5452218B2 (ja) 半導体ナノクリスタルを含む発光デバイス
US20200200362A1 (en) Quantum dot containing light module
US9167659B2 (en) Solid state lighting devices including quantum confined semiconductor nanoparticles, an optical component for a solid state lighting device, and methods
KR101960469B1 (ko) 반도체 나노결정, 그의 제조 방법, 조성물 및 제품
WO2014208478A1 (fr) Matériau électroluminescent, son procédé de production, film optique et dispositif électroluminescent
US11296150B2 (en) Display devices with different light sources in pixel structures
KR102556011B1 (ko) 반도체 나노 결정과, 이를 포함하는 표시 장치 및 유기발광 표시 장치
US11637258B2 (en) Display devices with different light sources
JP6652053B2 (ja) 半導体ナノ粒子集積体およびその製造方法
US20140027712A1 (en) Devices including quantum dots and method
KR20190131530A (ko) 양자 도트들을 이용하는 마이크로 led 디바이스들의 광 출력을 증가시키기 위한 방법
WO2021111556A1 (fr) Dispositif électroluminescent
WO2021044495A1 (fr) Élément électroluminescent et dispositif d'affichage
JP2015151456A (ja) 発光体粒子、発光体粒子の製造方法、光学部材、光学部材の製造方法および光学デバイス
WO2016076219A1 (fr) Film optique et procédé de fabrication d'un film optique
CN111584733A (zh) 发光器件
WO2024084572A1 (fr) Élément luminescent, dispositif d'affichage, et procédé de formation de couche luminescente
US12010862B2 (en) Electroluminescent devices with hybrid organic-inorganic transport layers
US11380863B2 (en) Flexible electroluminescent devices
US20220209199A1 (en) Flexible electroluminescent devices
Lin et al. Macroscopic Discolorization in Quantum Dot Color Converters for Microdisplay Applications

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 15806640

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2016527750

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 15806640

Country of ref document: EP

Kind code of ref document: A1