WO2015190025A1 - Élément électroluminescent à semi-conducteur et son procédé de fabrication - Google Patents

Élément électroluminescent à semi-conducteur et son procédé de fabrication Download PDF

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Publication number
WO2015190025A1
WO2015190025A1 PCT/JP2015/002016 JP2015002016W WO2015190025A1 WO 2015190025 A1 WO2015190025 A1 WO 2015190025A1 JP 2015002016 W JP2015002016 W JP 2015002016W WO 2015190025 A1 WO2015190025 A1 WO 2015190025A1
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section
bonding
base body
light emitting
electrode
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PCT/JP2015/002016
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English (en)
Inventor
Hiroshi Ono
Jumpei Tajima
Toshihide Ito
Kenjiro UESUGI
Shigeya Kimura
Shinya Nunoue
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Kabushiki Kaisha Toshiba
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Embodiments of the invention described herein relate to a semiconductor light emitting element and a method for manufacturing the same.
  • LEDs Light Emitting Diodes
  • the embodiments of the invention provide a semiconductor light emitting element having high efficiency and a method for manufacturing the same.
  • a semiconductor light emitting element includes a base body, first and second stacked bodies, first to fourth electrodes, a first inter-element connection section, first and second bonding sections, and a first separating insulating section.
  • the first stacked body is separated from the base body in a first direction.
  • the first stacked body includes a first semiconductor layer of a first conductivity type including a first region and a second region arranged in a direction intersecting the first direction, a second semiconductor layer of a second conductivity type provided between the second region and the base body, and a first light emitting layer provided between the second region and the second semiconductor layer.
  • the second stacked body is separated from the base body in the first direction and arranged with the first stacked body in a direction intersecting the first direction.
  • the second stacked body includes a third semiconductor layer of the first conductivity type including a third region and a fourth region arranged in a direction intersecting the first direction, a fourth semiconductor layer of the second conductivity type provided between the fourth region and the base body, and a second light emitting layer provided between the fourth region and the fourth semiconductor layer.
  • the first electrode is provided between the first region and the base body and electrically connected to the first region.
  • the second electrode is provided between the second semiconductor layer and the base body and electrically connected to the second semiconductor layer.
  • the third electrode is provided between the third region and the base body and electrically connected to the third region.
  • the fourth electrode is provided between the fourth semiconductor layer and the base body and electrically connected to the fourth semiconductor layer.
  • the first inter-element connection section includes a portion provided between the base body and a portion of the first stacked body and between the base body and a portion of the second stacked body, and is electrically connected to the second electrode and the third electrode.
  • the first bonding section is provided between the base body and at least a portion of the first inter-element connection section to bond the first inter-element connection section and the base body.
  • the second bonding section is provided between the fourth electrode and the base body.
  • the first separating insulating section is provided between the first bonding section and the second bonding section to electrically isolate the first bonding section and the second bonding section.
  • a light reflectance of the first inter-element connection section is higher than a light reflectance of the first bonding section and higher than a light reflectance of the second bonding section.
  • FIG. 1 is a schematic cross-sectional view showing a semiconductor light emitting element according to a first embodiment.
  • FIG. 2A to FIG. 2C are schematic cross-sectional views showing portions of the semiconductor light emitting element according to the first embodiment.
  • FIG. 3 is a schematic cross-sectional view showing a portion of the semiconductor light emitting element according to the first embodiment.
  • FIG. 4A to FIG. 4F are schematic cross-sectional views in order of the processes, showing the method for manufacturing the semiconductor light emitting element according to the first embodiment.
  • FIG. 5A to FIG. 5D are schematic cross-sectional views in order of the processes, showing the method for manufacturing the semiconductor light emitting element according to the first embodiment.
  • FIG. 6 is a flowchart showing the method for manufacturing the semiconductor light emitting element according to the first embodiment.
  • FIG. 7 is a schematic cross-sectional view showing another semiconductor light emitting element according to the first embodiment.
  • FIG. 8 is a schematic cross-sectional view showing another semiconductor light emitting element according to the first embodiment.
  • FIG. 9 is a schematic cross-sectional view showing a semiconductor light emitting element according to a second embodiment.
  • FIG. 1 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a first embodiment.
  • the semiconductor light emitting element 110 includes a base body 80, a first stacked body 10a, a second stacked body 10b, first to fourth electrodes e1 to e4, a first inter-element connection section 55a, a first bonding section 71a, a second bonding section 71b, and a first separating insulating section 65a.
  • the first stacked body 10a is separated from the base body 80 in a first direction D1.
  • the first direction D1 from the base body 80 toward the first stacked body 10a is parallel to a Z-axis direction.
  • One direction perpendicular to the Z-axis direction is taken as an X-axis direction.
  • a direction perpendicular to the Z-axis direction and the X-axis direction is taken as a Y-axis direction.
  • the first stacked body 10a includes a first semiconductor layer 11, a second semiconductor layer 12, and a first light emitting layer 10La.
  • the first semiconductor layer 11 includes a first region r1 and a second region r2.
  • the first region r1 and the second region r2 are arranged in a direction (in the drawing, the X-axis direction) intersecting the first direction D1.
  • the first semiconductor layer 11 has a first conductivity type.
  • the second semiconductor layer 12 is provided between the second region r2 and the base body 80.
  • the second semiconductor layer 12 has a second conductivity type.
  • the first light emitting layer 10La is provided between the second region r2 and the second semiconductor layer 12.
  • the first direction D1 is parallel to the direction from the second semiconductor layer 12 toward the second region r2.
  • the first conductivity type is an n-type; and the second conductivity type is a p-type.
  • the first conductivity type may be the p-type; and the second conductivity type may be the n-type.
  • the case is described where the first conductivity type is the n-type and the second conductivity type is the p-type.
  • the second stacked body 10b is arranged with the first stacked body 10a in a direction intersecting the first direction D1.
  • the second stacked body 10b is arranged with the first stacked body 10a in the X-axis direction. Also, the second stacked body 10b is separated from the base body 80 in the first direction D1.
  • the second stacked body 10b includes a third semiconductor layer 13, a fourth semiconductor layer 14, and a second light emitting layer 10Lb.
  • the third semiconductor layer 13 includes a third region r3 and a fourth region r4.
  • the third region r3 and the fourth region r4 are arranged in a direction (in the drawing, the X-axis direction) intersecting the first direction D1.
  • the third semiconductor layer 13 has the first conductivity type recited above.
  • the fourth semiconductor layer 14 is provided between the fourth region r4 and the base body 80.
  • the fourth semiconductor layer 14 has the second conductivity type recited above.
  • the second light emitting layer 10Lb is provided between the fourth region r4 and the fourth semiconductor layer 14.
  • the first electrode e1 is provided between the first region r1 and the base body 80 and is electrically connected to the first region r1.
  • the second electrode e2 is provided between the second semiconductor layer 12 and the base body 80 and is electrically connected to the second semiconductor layer 12.
  • the third electrode e3 is provided between the third region r3 and the base body 80 and is electrically connected to the third region r3.
  • the fourth electrode e4 is provided between the fourth semiconductor layer 14 and the base body 80 and is electrically connected to the fourth semiconductor layer 14.
  • the "state of being electrically connected” includes the state in which multiple conductors are in direct contact.
  • the “state of being electrically connected” includes the state in which a current flows between multiple conductors that have another conductor disposed between the multiple conductors.
  • the first inter-element connection section 55a includes a portion provided between the base body 80 and a portion of the first stacked body 10a and between the base body 80 and a portion of the second stacked body 10b.
  • the first inter-element connection section 55a electrically connects the second electrode e2 and the third electrode e3.
  • the first bonding section 71a is provided between the base body 80 and at least a portion of the first inter-element connection section 55a.
  • the first bonding section 71a bonds the first inter-element connection section 55a and the base body 80.
  • the second bonding section 71b is provided between the fourth electrode e4 and the base body 80.
  • the first separating insulating section 65a is provided between the first bonding section 71a and the second bonding section 71b.
  • the first separating insulating section 65a electrically isolates the first bonding section 71a and the second bonding section 71b.
  • a first pad section 41, a first pad interconnect 51, a first pad insulating section 66, a second pad section 42, and a second pad interconnect 52 are further provided in the semiconductor light emitting element 110.
  • the first pad section 41 is arranged with the first stacked body 10a in a direction (in the drawing, the X-axis direction) intersecting the first direction D1.
  • the first pad interconnect 51 electrically connects the first pad section 41 and the first electrode e1.
  • the first pad insulating section 66 is provided between the first pad interconnect 51 and the base body 80.
  • the first bonding section 71a extends between the first pad insulating section 66 and the base body 80.
  • the first pad insulating section 66 includes an insulating film 63a and an insulating film 61a.
  • the insulating film 63a is provided between the first pad interconnect 51 and the first bonding section 71a.
  • the insulating film 61a covers the side surface of a portion of the first stacked body 10a.
  • the second pad section 42 is arranged with the second stacked body 10b in a direction (in the drawing, the X-axis direction) intersecting the first direction D1.
  • the second pad interconnect 52 is provided between the fourth electrode e4 and the second bonding section 71b.
  • the second pad interconnect 52 electrically connects the fourth electrode e4 and the second pad section 42.
  • the second bonding section 71b bonds the second pad interconnect 52 and the base body 80.
  • the first separating insulating section 65a includes a second stacked body insulating film 63b and a second separation layer 68a.
  • the second stacked body insulating film 63b is provided between the first inter-element connection section 55a and the base body 80 between the base body 80 and a portion of the second stacked body 10b.
  • the second separation layer 68a contacts the second stacked body insulating film 63b and extends in the first direction D1.
  • the second bonding section 71b extends between the second stacked body insulating film 63b and the base body 80.
  • the second bonding section 71b contacts the second separation layer 68a.
  • the first separating insulating section 65a further includes an insulating film 61b.
  • the insulating film 61b covers the side surface of a portion of the second stacked body 10b.
  • insulating films 62a and 62b are further provided.
  • the insulating film 62a covers another side surface of a portion of the first stacked body 10a.
  • the insulating film 62b covers another side surface of a portion of the second stacked body 10b.
  • insulating films 64a and 64b are further provided.
  • the insulating film 64a is provided between the first pad interconnect 51 and a portion of the first stacked body 10a.
  • the insulating film 64b is provided between the base body 80 and a portion of the first stacked body 10a and between the base body 80 and a portion of the second stacked body 10b.
  • the insulating film 64b extends between the first stacked body 10a and the second stacked body 10b.
  • a portion of the first inter-element connection section 55a is disposed between the insulating film 64b and the first bonding section 71a.
  • the insulating film 64b is used to form a first inter-element insulation layer.
  • the first inter-element insulation layer (the insulating film 64b) is provided between the first inter-element connection section 55a and a portion of the first stacked body 10a.
  • the first electrode e1 and the third electrode e3 are n-side electrodes.
  • the second electrode e2 and the fourth electrode e4 are p-side electrodes.
  • the second electrode e2 and the third electrode e3 are electrically connected by the first inter-element connection section 55a.
  • the first stacked body 10a and the second stacked body 10b are connected in series.
  • a voltage is applied between the first pad section 41 and the second pad section 42.
  • a current flows in the first stacked body 10a and the second stacked body 10b via the first pad interconnect 51, the first inter-element connection section 55a, and the second pad interconnect 52. Due to the current, light is emitted from the first light emitting layer 10La and the second light emitting layer 10Lb. In the example, the light that is emitted is emitted from the side of the first semiconductor layer 11 and the third semiconductor layer 13.
  • an unevenness 11p is provided in a surface (the light emitting surface) of the first semiconductor layer 11; and an unevenness 13p is provided in a surface (the light emitting surface) of the third semiconductor layer 13.
  • an unevenness is provided in the light emitting surfaces. Due to the unevenness, the light is emitted efficiently to the outside.
  • the unevenness 11p and the unevenness 13p are provided respectively in the surfaces of the first semiconductor layer 11 and the third semiconductor layer 13.
  • other layers e.g., nitride semiconductor layers having low impurity concentrations, etc.
  • the unevenness 11p and the unevenness 13p may be provided in the surfaces of these other layers.
  • the first to fourth electrodes e1 to e4 include light-reflective materials.
  • these electrodes include at least one of aluminum, silver, gold, or rhodium. Thereby, a high light reflectance is obtained. Examples of the electrodes are described below.
  • the first inter-element connection section 55a also includes a light-reflective material.
  • the first inter-element connection section 55a includes at least one of aluminum, silver, gold, or rhodium. Further, the first inter-element connection section 55a may include multiple layers. Examples of the first inter-element connection section 55a are described below.
  • first pad interconnect 51 and the second pad interconnect 52 also include light-reflective materials.
  • at least one of the first pad interconnect 51 or the second pad interconnect 52 includes at least one of aluminum, silver, gold, or rhodium.
  • the light that is emitted from the light emitting layer is reflected efficiently by the electrodes, the inter-element connection section, and the interconnects.
  • the light that is reflected is emitted to the outside efficiently from the light emitting surface. Thereby, a high light extraction efficiency is obtained.
  • the first bonding section 71a and the second bonding section 71b bond the inter-element connection section and the base body 80 and bond the base body 80 and the interconnects.
  • the heat that is generated by the stacked body is conducted efficiently to the base body 80.
  • the heat is dissipated by the base body 80.
  • an excessive increase of the temperature of the stacked body is suppressed.
  • a high luminous efficiency is obtained.
  • the light extraction efficiency and the luminous efficiency increase.
  • a highly efficient semiconductor light emitting element can be provided.
  • the base body 80 includes a material having a high thermal conductivity and a high heat dissipation.
  • the base body 80 includes at least one of aluminum nitride or silicon. Thereby, good heat dissipation is obtained.
  • the light reflectance of the first inter-element connection section 55a is higher than the light reflectance of the first bonding section 71a and higher than the light reflectance of the second bonding section 71b.
  • the first inter-element connection section 55a includes a material having a high light reflectance. Thereby, in the first inter-element connection section 55a, a high light reflectivity is obtained; and a high light extraction efficiency is obtained.
  • the first bonding section 71a and the second bonding section 71b include materials having good bondability between the inter-element connection section and the base body 80 and good bondability between the interconnects and the base body 80.
  • at least one of the first bonding section 71a or the second bonding section 71b includes a metal.
  • At least one of the first bonding section 71a or the second bonding section 71b includes tin and at least one of gold or nickel.
  • the bonding sections include a metal such as Au-Sn, Ni-Sn, etc. Thereby, good bondability is obtained.
  • the same material as the bonding sections is used as the inter-element connection section.
  • the light reflectance of the inter-element connection section is the same as the light reflectance of the bonding sections. Because good bondability is necessary for the bonding sections, it is difficult to increase the light reflectance. Therefore, in the case where the same material as the bonding sections is used as the inter-element connection section, it is difficult to sufficiently increase the light reflectance of the inter-element connection section.
  • the inter-element connection section a material that is different from the bonding sections is used as the inter-element connection section.
  • the light reflectance of the inter-element connection section can be increased sufficiently.
  • a material having good bondability is used as the connection section.
  • good bondability is obtained; a high thermal conductivity is obtained; and good heat dissipation is obtained.
  • the reliability also increases.
  • an insulating layer is not provided between the second semiconductor layer 12 and the second electrode e2. Also, an insulating layer is not provided between the fourth semiconductor layer 14 and the fourth electrode. Thereby, the heat that is generated by the stacked bodies is conducted efficiently to the base body 80 via these electrodes and bonding sections. Good heat dissipation is obtained.
  • the bonding sections include a metal having a high thermal conductivity such as those recited above, etc.
  • an insulating layer is not provided between the second electrode e2 and the base body 80.
  • an insulating layer is not provided between the fourth electrode e4 and the base body 80. The heat that is generated by the stacked body is conducted efficiently to the base body 80 via the bonding sections.
  • the first bonding section 71a and the second bonding section 71b are electrically isolated by the gap.
  • the bonding sections may undesirably contact each other if the first bonding section 71a and the second bonding section 71b excessively approach each other.
  • the materials that are used to form the bonding sections are melted.
  • the materials that are melted contact each other. Therefore, in the reference example, it is difficult to shorten the distance (the width of the gap) between the bonding sections. Therefore, the surface area (the cross-sectional area) of the bonding sections cannot be set to be sufficiently large; and a sufficiently high thermal conductivity is not obtained.
  • the first separating insulating section 65a is provided between the first bonding section 71a and the second bonding section 71b.
  • the first bonding section 71a and the second bonding section 71b are electrically isolated by the first separating insulating section 65a. Therefore, the distance between the bonding sections can be shortened sufficiently. Thereby, the surface area (the cross-sectional area) of the bonding sections can be sufficiently large; and a high thermal conductivity is obtained.
  • multiple stacked bodies are connected in series.
  • the appropriate operating voltage for one stacked body is within a prescribed range.
  • the voltage that is applied to the two ends of the multiple stacked bodies connected in series is divided between the multiple stacked bodies.
  • the voltage that is applied to each of the stacked bodies can be set to be within a desirable prescribed range.
  • driving is obtained by a low current at which high efficiency is obtained.
  • low current operation of the multiple stacked bodies is obtained using a high voltage.
  • high efficiency is obtained for the multiple stacked bodies.
  • shielding components such as electrodes, etc.
  • the inter-element connection section is provided not at the light extraction surface but on the base body 80 side. Thereby, a high light extraction efficiency is obtained. Due to the pad sections, the mountability is high.
  • FIG. 2A to FIG. 2C are schematic cross-sectional views illustrating portions of the semiconductor light emitting element according to the first embodiment.
  • the first electrode e1 may include a first metal film e1a, a second metal film e1b, and a third metal film e1c.
  • the first metal film e1a is disposed between the third metal film e1c and the first semiconductor layer 11 (the first region r1).
  • the second metal film e1b is disposed between the third metal film e1c and the first metal film e1a.
  • the first metal film e1a includes at least one of aluminum, silver, gold, or rhodium.
  • the second metal film e1b includes, for example, Ta.
  • the third metal film e1c includes, for example, Ti.
  • the thickness of the first electrode e1 is not less than 50 nanometers (nm) and not more than 300 nm (e.g., 150 nm).
  • the thickness of the first metal film e1a is, for example, not less than 30 nm and not more than 150 nm.
  • the thickness of the second metal film e1b is, for example, not less than 10 nm and not more than 50 nm.
  • the thickness of the third metal film e1c is, for example, not less than 10 nm and not more than 100 nm.
  • heat treatment of the first electrode e1 is performed in a nitrogen atmosphere at not lower than 300 degrees Celsius and not higher than 670 degrees Celsius (e.g., 400 degrees Celsius) for not less than 0.5 minutes and not more than 5 minutes (e.g., 1 minute).
  • concentration of the nitrogen in the nitrogen atmosphere is, for example, not lower than 70% and not higher than 100%.
  • concentration of the oxygen in the nitrogen atmosphere is, for example, not higher than 30%.
  • the first electrode e1 By applying the configuration recited above to the first electrode e1, good ohmic characteristics with the first semiconductor layer 11 are obtained. A low contact resistance with the first semiconductor layer 11 is obtained. High electrical characteristics and a high light reflectance are obtained.
  • the configurations and materials described in regard to the first electrode e1 are applicable to the third electrode e3.
  • the second electrode e2 may include a fourth metal film e2a, a fifth metal film e2b, a sixth metal layer e2c, and a seventh metal film e2d.
  • the fourth metal film e2a is disposed between the seventh metal film e2d and the second semiconductor layer 12.
  • the fifth metal film e2b is disposed between the seventh metal film e2d and the fourth metal film e2a.
  • the sixth metal film e2c is disposed between the seventh metal film e2d and the fifth metal film e2b.
  • the fourth metal film e2a includes at least one of aluminum, silver, gold, or rhodium.
  • a film of Ni/Ag or a film of ITO/Ag may be used as the fourth metal film e2a.
  • the fifth metal film e2b includes, for example, Pt.
  • the sixth metal film e2c includes, for example, Ti.
  • the seventh metal film e2d includes, for example, Ni.
  • the seventh metal film e2d may be omitted.
  • the thickness of the second electrode e2 is not less than 100 nm and not more than 500 nm (e.g., 300 nm).
  • the thickness of the fourth metal film e2a is, for example, not less than 50 nm and not more than 400 nm.
  • the thickness of the fifth metal film e2b is, for example, not less than 10 nm and not more than 100 nm.
  • the thickness of the sixth metal film e2c is, for example, not less than 10 nm and not more than 100 nm.
  • the thickness of the seventh metal film e2d is, for example, not less than 10 nm and not more than 100 nm.
  • the fifth metal film e2b, the sixth metal film e2c, and the seventh metal film e2d are formed after performing the following two stages of heat treatment in the state in which, for example, a Ag film is formed as the fourth metal film e2a.
  • the heat treatment conditions of the two stages are as follows. In the first stage, heat treatment is performed while causing nitrogen having a concentration of not lower than 70% and not higher than 100% to flow at, for example, not lower than 250 degrees Celsius and not higher than 400 degrees Celsius (e.g., 300 degrees Celsius) for not less than 0.5 minutes and not more than 5 minutes (e.g., 1 minute).
  • heat treatment is performed by supplying oxygen having a concentration of not lower than 70% and not higher than 90% (e.g., 80%) while supplying nitrogen having a concentration of not lower than 10% and not higher than 30% (e.g., 20%) at not lower than 250 degrees Celsius and not higher than 400 degrees Celsius (e.g., 300 degrees Celsius) for not less than 0.5 minutes and not more than 5 minutes (e.g., 1 minute).
  • oxygen having a concentration of not lower than 70% and not higher than 90% (e.g., 80%) while supplying nitrogen having a concentration of not lower than 10% and not higher than 30% (e.g., 20%) at not lower than 250 degrees Celsius and not higher than 400 degrees Celsius (e.g., 300 degrees Celsius) for not less than 0.5 minutes and not more than 5 minutes (e.g., 1 minute).
  • the second electrode e2 By applying the configuration recited above to the second electrode e2, good ohmic characteristics with the second semiconductor layer 12 are obtained. A low contact resistance with the second semiconductor layer 12 is obtained. High electrical characteristics and a high light reflectance are obtained.
  • the configurations and materials described in regard to the second electrode e2 are applicable to the fourth electrode e4.
  • the first inter-element connection section 55a may include an eighth metal film 55aa, a ninth metal film 55ab, and a tenth metal film 55ac.
  • the eighth metal film 55aa is disposed between the tenth metal film 55ac and the first semiconductor layer 11 (in the example, between the tenth metal film 55ac and the insulating film 62a).
  • the ninth metal film 55ab is disposed between the tenth metal film 55ac and the eighth metal film 55aa.
  • the eighth metal film 55aa and the ninth metal film 55ab include at least one of aluminum, silver, gold, or rhodium.
  • the tenth metal film 55ac includes, for example, Ti.
  • the above mentioned layer including Ti (the tenth metal film 55ac) is provided between the first bonding section 71a and the above mentioned layer including at least one of aluminum, silver, gold, or rhodium.
  • the thickness of the first inter-element connection section 55a is not less than 310 nm and not more than 2000 nm (e.g., 700 nm).
  • the thickness of the eighth metal film 55aa is, for example, not less than 300 nm and not more than 1800 nm.
  • the thickness of the ninth metal film 55ab is, for example, not less than 10 nm and not more than 200 nm.
  • the thickness of the tenth metal film 55ac is, for example, not less than 10 nm and not more than 200 nm.
  • the semiconductor layers and the light emitting layer include, for example, nitride semiconductors.
  • the types of the semiconductors are arbitrary.
  • FIG. 3 is a schematic cross-sectional view illustrating a portion of the semiconductor light emitting element according to the first embodiment.
  • the first light emitting layer 10La includes, for example, multiple barrier layers BL and a well layer WL.
  • multiple well layers WL are provided.
  • the multiple barrier layers BL and the multiple well layers WL are disposed alternately along the Z-axis direction.
  • the well layer WL includes, for example, In x1 Ga 1-x1 N (0 ⁇ x1 ⁇ 1).
  • the barrier layer BL includes, for example, GaN.
  • the bandgap energy of the barrier layer BL is larger than the bandgap energy of the well layer WL.
  • the first light emitting layer 10La has, for example, a multiple quantum well (MQW: Multi Quantum Well) configuration. Multiple well layers WL are provided in such a case.
  • the first light emitting layer 10La may have a single quantum well (SQW: Single Quantum Well) configuration.
  • the number of well layers WL in such a case is 1.
  • the configurations and materials described in regard to the first light emitting layer 10La are applicable to the second light emitting layer 10Lb.
  • the peak wavelength of the light (the emitted light) emitted from the light emitting layer is, for example, not less than 400 nm and not more than 650 nm. However, in the embodiment, the peak wavelength is arbitrary.
  • the first semiconductor layer 11 includes, for example, a GaN layer including an n-type impurity.
  • the n-type impurity includes at least one of Si, Ge, Te, or Sn.
  • the first semiconductor layer 11 includes, for example, an n-side contact layer. The configurations and materials described in regard to the first semiconductor layer 11 are applicable to the third semiconductor layer 13.
  • the second semiconductor layer 12 includes, for example, a GaN layer including a p-type impurity.
  • the p-type impurity may be at least one of Mg, Zn, or C.
  • the second semiconductor layer 12 includes, for example, a p-side contact layer. The configurations and materials described in regard to the second semiconductor layer 12 are applicable to the fourth semiconductor layer 14.
  • the configurations of the first pad section 41 and the second pad section 42 are, for example, polygons (e.g., pentagons or higher), circles, flattened circles, etc.
  • the widths of the pad sections are, for example, not less than 50 micrometers and not more than 200 micrometers (e.g., 130 micrometers).
  • bonding wires are connected to the pad sections. Widths (sizes) for which stable connections are possible are used.
  • the insulating films 61a, 62a, 61b, 62b, 64a, and 64b include, for example, silicon oxide (SiO 2 ).
  • the thicknesses of the insulating films are, for example, not less than 200 nm and not more than 1500 nm (e.g., 400 nm).
  • the insulating films are formed at high temperatures. Thereby, good insulative properties, good coverage, and good reliability are obtained for the insulating films.
  • the insulating film 63a and the second stacked body insulating film 63b include, for example, silicon oxide.
  • the thicknesses of the insulating films are, for example, not less than 200 nm and not more than 3000 nm (e.g., 1000 nm).
  • the insulating films are formed at high temperatures. Thereby, good insulative properties, good coverage, and good reliability are obtained for the insulating films.
  • the insulating films may be formed at low temperatures. By using the insulating films, good spreading of the current is obtained; and the effective light emission surface area can be enlarged.
  • the side surface of a portion of the first stacked body 10a and the side surface of a portion of the second stacked body 10b are tilted with respect to the Z-axis direction.
  • the mesa configuration is applied.
  • the second region r2 of the first semiconductor layer 11 has a major surface 11mf and a side surface 11sf.
  • the major surface 11mf is substantially perpendicular to the first direction D1 (the Z-axis direction).
  • the side surface 11sf is tilted with respect to the major surface 11mf.
  • the angle between the side surface 11sf and the first direction D1 is not less than 10 degrees and not more than 70 degrees.
  • the travel direction of the light can be changed by the side surface 11sf being tilted with respect to the major surface 11mf.
  • the intensity of the light emitted from the light emitting layer is a maximum in a direction of about 30 degrees.
  • the light traveling at the angle at which the intensity of the light is a maximum can be changed efficiently.
  • a stepped portion is provided in the first semiconductor layer 11 between the first region r1 and the second region r2. It is favorable for the height (the depth) of the stepped portion to be, for example, not less than 0.2 micrometers and not more than 10 micrometers, and more favorably not less than 0.3 micrometers and not more than 1.5 micrometers.
  • the stepped portion is excessively high, good bonding is difficult to obtain.
  • the stepped portion is excessively high, good contact between the electrode and the first semiconductor layer 11 is difficult to obtain.
  • the stepped portion is excessively low, for example, the extraction of the light degrades. Then, the spreading of the current in the first semiconductor layer 11 degrades. There are also cases where contact is not obtained.
  • the tilting and stepped portions recited above that are described in regard to the first stacked body 10a are applicable to the second stacked body 10b.
  • FIG. 4A to FIG. 4F and FIG. 5A to FIG. 5D are schematic cross-sectional views in order of the processes, illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment.
  • a buffer layer 91 is formed on a growth substrate 90; and a first semiconductor film 11f, a light emitting film 10Laf, and a second semiconductor film 12f are sequentially formed in this order on the buffer layer 91.
  • the formation of these films may include, for example, metal-organic chemical vapor deposition (Metal-Organic Chemical Vapor Deposition: MOCVD), metal-organic vapor phase epitaxy (Metal-Organic Vapor Phase Epitaxy: MOVPE), molecular beam epitaxy (Molecular Beam Epitaxy: MBE), hydride vapor phase epitaxy (HVPE), etc. These films are epitaxially grown.
  • the growth substrate 90 includes, for example, a substrate of silicon, sapphire, spinel, GaAs, InP, ZnO, Ge, SiGe, SiC, etc.
  • the first stacked body 10a and the second stacked body 10b are formed by removing a portion of the first semiconductor film 11f, a portion of the light emitting film 10Laf, and a portion of the second semiconductor film 12f.
  • the patterning of the removal includes, for example, RIE (Reactive Ion Etching).
  • RIE Reactive Ion Etching
  • a gas including chlorine is used in the RIE.
  • the first semiconductor layer 11 and the third semiconductor layer 13 are continuous at this time and are separated in a process described below.
  • an insulating film 60f is formed on the stacked body.
  • CVD Chemical Vapor Deposition
  • sputtering sputtering
  • SOG Spin On Glass
  • the insulating film 60f is patterned as shown in FIG. 4D. Thereby, the insulating films 61a, 62a, 61b, 62b, 64a, and 64b are formed from the insulating film 60f.
  • the first electrode e1 is formed on the first semiconductor layer 11 (the first region r1) exposed by removing a portion of the insulating film 60f.
  • the third electrode e3 is formed on the third semiconductor layer 13 (the third region r3) exposed by removing a portion of the insulating film 60f. These electrodes are formed simultaneously.
  • the second electrode e2 is formed on the second semiconductor layer 12.
  • the fourth electrode e4 is formed on the fourth semiconductor layer 14. For example, these electrodes may be formed simultaneously.
  • the first pad interconnect 51, the second pad interconnect 52, and the first inter-element connection section 55a are formed as shown in FIG. 4E.
  • the insulating film 63a and the second stacked body insulating film 63b are formed as shown in FIG. 4F.
  • a supporter 80u is prepared as shown in FIG. 5A.
  • the supporter 80u includes the base body 80, a first bonding film 71af, a second bonding film 71bf, and the second separation layer 68a.
  • the second separation layer 68a is disposed between the first bonding film 71af and the second bonding film 71bf.
  • the first bonding film 71af, the second bonding film 71bf, and the second separation layer 68a are disposed between the base body 80 and the stacked bodies.
  • the interconnect section, the inter-element connection section, and the base body 80 are bonded by the bonding films by heating.
  • the first bonding section 71a and the second bonding section 71b are formed respectively from the first bonding film 71af and the second bonding film 71bf.
  • the first separating insulating section 65a is formed from the second separation layer 68a, the second stacked body insulating film 63b, and the insulating film 61b. Further, the growth substrate 90 and the buffer layer 91 are removed.
  • the first semiconductor layer 11 and the third semiconductor layer 13 are formed by separating the first semiconductor film 11f. An unevenness is formed in the upper surfaces of these semiconductor layers.
  • the first pad section 41 and the second pad section 42 are formed as shown in FIG. 5D. Thereby, the semiconductor light emitting element 110 is formed.
  • FIG. 6 is a flowchart illustrating the method for manufacturing the semiconductor light emitting element according to the first embodiment. As shown in FIG. 6, the manufacturing method includes a stacked body formation process (step S110), an electrode formation process (step S120), a connection section formation process (step S130), and a bonding process (step S140).
  • the first semiconductor film 11f of the first conductivity type is formed on the growth substrate 90; the light emitting film 10Laf is formed on the first semiconductor film 11f; and the second semiconductor film 12f of the second conductivity type is formed on the light emitting film 10Laf.
  • the first stacked body 10a and the second stacked body 10b are formed by removing a portion of the first semiconductor film 11f, a portion of the light emitting film 10Laf, and a portion of the second semiconductor film 12f. In other words, the processing described in regard to FIG. 4A and FIG. 4B is performed.
  • the first stacked body 10a includes the first semiconductor layer 11, the first light emitting layer 10La, and the second semiconductor layer 12.
  • the first semiconductor layer 11 includes the first region r1 and the second region r2. These regions are arranged in the direction intersecting the first direction D1 (the Z-axis direction) from the second semiconductor film 12f toward the first semiconductor film 11f.
  • the first semiconductor layer 11 is formed from the first semiconductor film 11f.
  • the first light emitting layer 10La is provided on the first region r1.
  • the first light emitting layer 10La is formed from the light emitting film 10Laf.
  • the second semiconductor layer 12 is provided on the first light emitting layer 10La.
  • the second semiconductor layer 12 is formed from the second semiconductor film 12f.
  • the second stacked body 10b is arranged with the first stacked body 10a in the direction intersecting the first direction D1.
  • the second stacked body 10b includes the third semiconductor layer 13, the second light emitting layer 10Lb, and the fourth semiconductor layer 14.
  • the third semiconductor layer 13 includes the third region r3 and the fourth region r4. These regions are arranged in the direction intersecting the first direction D1.
  • the third semiconductor layer 13 is formed from the first semiconductor film 11f.
  • the second light emitting layer 10Lb is provided on the fourth region r4.
  • the second light emitting layer 10Lb is formed from the light emitting film 10Laf.
  • the fourth semiconductor layer 14 is provided on the second light emitting layer 10Lb.
  • the fourth semiconductor layer 14 is formed from the second semiconductor film 12f.
  • the first to fourth electrodes e1 to e4 are formed.
  • the first electrode e1 is provided on the first region r1.
  • the second electrode e2 is provided on the second semiconductor layer 12.
  • the third electrode e3 is provided on the third region r3.
  • the fourth electrode e4 is provided on the fourth semiconductor layer 14. In other words, the processing described in regard to FIG. 4D is performed.
  • the first inter-element connection section 55a is formed.
  • the first inter-element connection section 55a electrically connects the second electrode e2 and the third electrode e3. In other words, the processing described in regard to FIG. 4E is performed.
  • the supporter 80u is prepared.
  • the supporter 80u includes the base body 80, the first bonding film 71af, the second bonding film 71bf, and the separating insulating film (the second separation layer 68a).
  • the first bonding film 71af and the second bonding film 71bf are provided on the base body 80.
  • the separating insulating film is provided between the first bonding film 71af and the second bonding film 71bf.
  • the first bonding film 71af of the supporter 80u and at least a portion of the first inter-element connection section 55a are bonded.
  • the processing described in regard to FIG. 5A and FIG. 5B is performed.
  • the bonding process includes forming the first bonding section 71a that is formed from the first bonding film 71af, the second bonding section 71b that is formed from the second bonding film 71bf, and the first separating insulating section 65a that includes the separating insulating film (the second separation layer 68a).
  • the first bonding section 71a is provided between the base body 80 and at least a portion of the first inter-element connection section 55a to bond the first inter-element connection section 55a and the base body 80.
  • the second bonding section 71b is provided between the fourth electrode e4 and the base body 80.
  • the first separating insulating section 65a is provided between the first bonding section 71a and the second bonding section 71b to electrically isolate the first bonding section 71a and the second bonding section 71b.
  • the light reflectance of the first inter-element connection section 55a is higher than the light reflectance of the first bonding film 71af (the first bonding section 71a) and higher than the light reflectance of the second bonding film 71bf (the second bonding section 71b). According to the manufacturing method, a method for manufacturing a highly efficient semiconductor light emitting element is provided.
  • FIG. 7 is a schematic cross-sectional view illustrating another semiconductor light emitting element according to the first embodiment.
  • the first separating insulating section 65a does not overlap the first stacked body 10a when projected onto the X-Y plane.
  • the second separation layer 68a overlaps the second stacked body 10b but does not overlap the first stacked body 10a when projected onto the X-Y plane.
  • a highly efficient semiconductor light emitting element can be provided.
  • FIG. 8 is a schematic cross-sectional view illustrating another semiconductor light emitting element according to the first embodiment.
  • the second stacked body insulating film 63b is omitted from the semiconductor light emitting element 112 according to the embodiment.
  • the second separation layer 68a contacts the insulating film 61b.
  • the first separating insulating section 65a is formed from the second separation layer 68a and the insulating film 61b. In such a case as well, the first separating insulating section 65a does not overlap the first stacked body 10a when projected onto the X-Y plane.
  • the second separation layer 68a overlaps the second stacked body 10b but does not overlap the first stacked body 10a when projected onto the X-Y plane.
  • a highly efficient semiconductor light emitting element can be provided.
  • the position of the second separation layer 68a is arbitrary.
  • FIG. 9 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a second embodiment.
  • a third stacked body 10c As shown in FIG. 9, in addition to the components described in regard to the semiconductor light emitting element 110, a third stacked body 10c, a fifth electrode e5, a sixth electrode e6, a second inter-element connection section 55b, a third bonding section 71c, and a second separating insulating section 65b are further provided in the semiconductor light emitting element 120 according to the embodiment.
  • the third stacked body 10c is separated from the base body 80 in the first direction D1.
  • the second stacked body 10b is disposed between the third stacked body 10c and the first stacked body 10a.
  • the third stacked body 10c includes a fifth semiconductor layer 15, a sixth semiconductor layer 16, and a third light emitting layer 10Lc.
  • the fifth semiconductor layer 15 includes a fifth region r5 and a sixth region r6 arranged in the direction intersecting the first direction D1.
  • the fifth semiconductor layer 15 has the first conductivity type recited above.
  • the sixth semiconductor layer 16 is provided between the sixth region r6 and the base body 80.
  • the sixth semiconductor layer 16 has the second conductivity type recited above.
  • the third light emitting layer 10Lc is provided between the sixth region r6 and the sixth semiconductor layer 16.
  • the fifth electrode e5 is provided between the fifth region r5 and the base body 80 and is electrically connected to the fifth region r5.
  • the sixth electrode e6 is provided between the sixth semiconductor layer 16 and the base body 80 and is electrically connected to the sixth semiconductor layer 16.
  • the second inter-element connection section 55b includes a portion that is provided between the base body 80 and a portion of the second stacked body 10b and between the base body 80 and a portion of the third stacked body 10c.
  • the second inter-element connection section 55b electrically connects the fourth electrode e4 and the fifth electrode e5.
  • the third bonding section 71c is provided between the sixth electrode e6 and the base body 80.
  • the second separating insulating section 65b is provided between the second bonding section 71b and the third bonding section 71c.
  • the second separating insulating section 65b electrically isolates the second bonding section 71b and the third bonding section 71c.
  • the second bonding section 71b is provided between the base body 80 and at least a portion of the second inter-element connection section 55b.
  • the second bonding section 71b bonds the second inter-element connection section 55b and the base body 80.
  • the configurations and materials described in regard to the first semiconductor layer 11 are applied to the fifth semiconductor layer 15.
  • the configurations and materials described in regard to the second semiconductor layer 12 are applied to the sixth semiconductor layer 16.
  • the configurations and materials described in regard to the first light emitting layer 10La are applied to the third light emitting layer 10Lc.
  • the configurations and materials described in regard to the first electrode e1 are applied to the fifth electrode e5.
  • the configurations and materials described in regard to the second electrode e2 are applied to the sixth electrode e6.
  • the configurations and materials described in regard to the first separating insulating section 65a are applied to the second separating insulating section 65b.
  • the configurations and materials described in regard to the first inter-element connection section 55a are applied to the second inter-element connection section 55b.
  • the light reflectance of the second inter-element connection section 55b is higher than the light reflectance of the first bonding section 71a, higher than the light reflectance of the second bonding section 71b, and higher than the light reflectance of the third bonding section 71c.
  • the semiconductor light emitting element 120 as well, a highly efficient semiconductor light emitting element is provided.
  • the second pad section 42 is electrically connected to the sixth electrode e6.
  • the semiconductor light emitting element 120 includes the second pad section 42 and the second pad interconnect 52.
  • the second pad section 42 is arranged with the third stacked body 10c in the direction intersecting the first direction D1.
  • the second pad interconnect 52 is provided between the sixth electrode e6 and the third bonding section 71c.
  • the second pad interconnect 52 electrically connects the sixth electrode e6 and the second pad section 42.
  • the third bonding section 71c bonds the second pad interconnect 52 and the base body 80.
  • the second separating insulating section 65b includes a third stacked body insulating film 63c and a third separation layer 68b.
  • the third stacked body insulating film 63c is provided between the base body 80 and a portion of the third stacked body 10a and between the base body 80 and the second inter-element connection section 55b.
  • the third separation layer 68b contacts the third stacked body insulating film 63c and extends in the first direction D1.
  • the third bonding section 71c extends between the third stacked body insulating film 63c and the base body 80.
  • the third bonding section 71c contacts the third separation layer 68b.
  • the second separating insulating section 65b further includes an insulating film 61c.
  • An insulating film 62c is further provided.
  • the insulating film 61c covers the side surface of a portion of the third stacked body 10c.
  • the insulating film 62c covers another side surface of a portion of the third stacked body 10c.
  • the configurations and materials described in regard to the insulating film 61a and the insulating film 62a are applicable to the insulating film 61c and the insulating film 62c.
  • an unevenness 15p is provided in the front surface (the light emitting surface) of the fifth semiconductor layer 15.
  • the number of stacked bodies connected in series is, for example, not less than 2 and not more than 35.
  • the number of stacked bodies connected in series is arbitrary.
  • a semiconductor light emitting element and a method for manufacturing the semiconductor light emitting element having high efficiency can be provided.
  • nitride semiconductor includes all compositions of semiconductors of the chemical formula B x In y Al z Ga 1-x-y-z N (x is not less than 0 and not more than 1, y is not less than 0 and not more than 1, z is not less than 0 and not more than 1, and x+y+z is not more than 1) for which the composition ratios x, y, and z are changed within the ranges respectively.
  • N nitrogen
  • various elements added to control various properties such as the conductivity type and the like, and various elements included unintentionally.
  • perpendicular and parallel include not only strictly perpendicular and strictly parallel but also, for example, the fluctuation due to manufacturing processes, etc.; and it is sufficient to be substantially perpendicular and substantially parallel.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un élément électroluminescent à semi-conducteur comprenant un corps de base (80), un premier et un second corps empilés (10a,10b), quatre électrodes de la première à la quatrième (e1,e2,e3,e4), une première partie de connexion inter-éléments (55a), une première et une seconde parties de collage (71a,71b) et une première partie isolante de séparation (65a). La première partie de connexion inter-éléments (55a) comprend une partie située entre le corps de base (80) et une partie du premier corps empilé (10a) et une partie située entre le corps de base (80) et une partie du second corps empilé (10b), et est connectée électriquement à la deuxième électrode (e2) connectée au premier corps empilé (10a) et à la troisième électrode (e3) connectée au second corps empilé (10b). La première partie de collage (71a) est située entre le corps de base (80) et au moins une partie de la première partie de connexion inter-éléments (55a) pour fixer solidairement la première partie de connexion inter-éléments (55a) et le corps de base (80). La seconde partie de collage (71b) est située entre la quatrième électrode (e4) et le corps de base (80). La première partie isolante de séparation (65a) est située entre la première et la seconde parties de collage (71a,71b) pour isoler électriquement la première et la seconde parties de collage (71a,71b). Une réflectivité à la lumière de la première partie de connexion inter-éléments (55a) est supérieure à la réflectivité à la lumière des première et seconde parties de collage (71a,71b).
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