WO2015188634A1 - 一种基于光学天线的太赫兹探测器 - Google Patents

一种基于光学天线的太赫兹探测器 Download PDF

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WO2015188634A1
WO2015188634A1 PCT/CN2015/072736 CN2015072736W WO2015188634A1 WO 2015188634 A1 WO2015188634 A1 WO 2015188634A1 CN 2015072736 W CN2015072736 W CN 2015072736W WO 2015188634 A1 WO2015188634 A1 WO 2015188634A1
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antenna
transistor
optical
optical antenna
terahertz
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French (fr)
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闫锋
纪小丽
吴福伟
朱颖杰
廖轶明
张行行
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Nanjing University
Nanjing Tech University
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Nanjing Tech University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/298—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation the devices being characterised by field-effect operation, e.g. MIS type detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/95—Circuit arrangements
    • H10F77/953—Circuit arrangements for devices having potential barriers
    • H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

Definitions

  • the invention relates to the field of terahertz signal detection, and more particularly to a detector structure using an optical antenna as a signal receiving component, which can achieve greater response.
  • Terahertz is an electromagnetic wave with a frequency between infrared and microwave that has many unique properties. Due to the high frequency of terahertz, its spatial resolution and temporal resolution are very high. At the same time, many non-metallic polar materials absorb less terahertz rays, so they can detect the internal information of the material. In addition, the terahertz electromagnetic energy is small, it will not damage the material, and the resonance frequency of the biomolecule vibration and the rotational frequency is Terahertz band, so terahertz also has good application prospects in the agricultural and food processing industries. At present, terahertz has brought far-reaching influence on broadband communication, radar, medical imaging, non-destructive testing, and security inspection.
  • terahertz signal detector structures such as terahertz detection using micro-band antennas made of top-layer metal as reported in the literature [F Schuster, Optics Express, Vol. 19, No. 8, April 2011].
  • the structure of the microstrip antennas 104 and 105 made of the top metal is connected to the source 101 and the drain 102 of the transistor through the via holes respectively, and a suitable bias voltage is applied to the gate 103 of the transistor during operation.
  • the AC voltage signal generated by the antenna is applied to the source and the drain of the device, and the transistor rectifies the AC signal into a DC signal through a self-mixing process, and reads out through the drain end of the transistor, thereby realizing the detection of the terahertz signal.
  • the cross section of the detector is shown in FIG. 2.
  • the antenna is made of a top metal (assumed to be a 3-layer metal process) and connected to the second layer of metal 207 through a via 208, and is connected to the first layer of metal 205 through a via 206. Connection to the source 201 and the drain terminal 202 of the transistor is achieved through the via 204.
  • the detector Based on standard integrated circuit process technology, the detector enables highly integrated functions with low power consumption and cost advantages.
  • the above detectors still use a conventional radio wave antenna made of metal.
  • the antenna size is at least 1/2 wavelength and the size is large, which is not conducive to the integration of the detector array.
  • the gain of the radio wave antenna is limited, and the voltage response of the detector made by the radio wave antenna is limited.
  • an object of the present invention is to provide a novel terahertz detector based on an optical antenna, which uses a surface plasmon polariton (SPP) generated by an optical antenna to realize localized enhancement of terahertz waves.
  • SPP surface plasmon polariton
  • the technical solution of the present invention is an optical antenna-based terahertz detector comprising an optical antenna, a transistor or a field effect transistor made of a polysilicon material layer; the optical antenna is respectively placed at the source and the drain of the transistor, and the antenna The distance between the edge of the edge of the transistor and the edge of the transistor is 100-500 nm.
  • the optical antenna and the source, drain and gate of the transistor are separated by a filled oxide in a standard process; the optical antenna and the gate of the transistor are made of the same polysilicon material, but doped through Other processes are separately implemented, and the thickness thereof is 100-300 nm; the optical antenna adopts a dipole antenna and a bow-tie antenna antenna structure, and the material is doped polysilicon material, and the doping concentration of the polysilicon material is 10 17 to 10 20 ;
  • the terahertz detector works by applying a DC bias voltage to the gate of the transistor, the source is grounded, the drain is floating, and the signal voltage is output from the drain.
  • the transistor gate portion 303 is located in the middle of the antenna gap, and the transistor gate 303 is also a polysilicon layer, and the gate length is 50-300 nm.
  • the transistor gate 303 is subjected to a silicon silicide process to improve conductivity, while the optical antennas 304 and 305 are not subjected to a silicon metallization process to maintain semiconductor characteristics.
  • the optical antenna adopts a combination of a dipole and a bow-tie structure
  • the dipole length D ranges from 1 to 10 micrometers
  • the width W is 1 to 5 micrometers
  • the collar-shaped portion radius L is 5 to 30 micrometers.
  • the angle of the angle is 90 to 180 degrees.
  • the plasma frequency of the antenna is equal to the frequency of the signal to be measured, thereby generating a surface plasmon SPP on the antenna to achieve local enhancement of the terahertz field.
  • the doping concentration of the polysilicon material is 10 17 to 10 20 . It can be doped with n-type or P-type polysilicon. And polysilicon optical antennas avoid the formation of metal silicide in process manufacturing.
  • the plasma frequency of a material is related to the electron concentration n of the material, ie, where is the electron effective mass. Therefore, the present invention adjusts the doping concentration of the polysilicon antenna so that the plasma frequency of the optical antenna is equal to the terahertz band. If the terahertz signal frequency is equal to the plasma frequency of the optical antenna, when the terahertz ray is incident on the detector, a surface plasmon SPP will be generated on the surface of the optical antenna, thereby achieving a local enhancement effect of the terahertz signal field.
  • the wavelength of the surface plasmon is much smaller than the wavelength of the terahertz signal in the air, so the size of the optical antenna made of polysilicon is much smaller than that of the radio wave antenna made of metal.
  • the area can be greatly reduced, which is beneficial to increase the size and integration of the detector array.
  • the terahertz detector of the present invention uses (doped) polysilicon material to form an antenna, and by adjusting the doping concentration of the polysilicon material, the plasma frequency of the antenna is equal to the frequency of the signal to be measured, thereby A surface plasmon SPP is generated on the antenna to achieve local enhancement of the terahertz field, thereby increasing the voltage response of the detector.
  • the terahertz detector of the present invention realizes the local enhancement of the field by using the SPP generated by the optical antenna, and the wavelength of the SPP is much smaller than the wavelength of the terahertz signal in the air, so the size of the optical antenna is made of metal.
  • the number of radio wave antennas is much smaller, and the detector area is reduced, which facilitates the integration of large-scale arrays of detectors.
  • the terahertz detector of the invention utilizes polysilicon material as the antenna, has a simple structure and reduces the design difficulty of the detector.
  • Figure 1 is a plan view of a terahertz detector based on a conventional radio wave antenna structure.
  • FIG. 2 is a cross-sectional view of a terahertz detector based on a conventional radio wave antenna structure.
  • FIG. 3 is a plan view showing the structure of a terahertz detector based on an optical antenna according to the present invention.
  • FIG. 4 is a cross-sectional view of a terahertz detector based on an optical antenna according to the present invention.
  • Figure 5 is an equivalent circuit diagram of the detector of the present invention.
  • FIG. 6 is a graph showing simulation results of electric field gain of the detector according to the present invention.
  • FIG. 3 is a schematic plan view showing the structure of a terahertz detector based on an optical antenna according to the present invention.
  • Polysilicon is used as the antenna material, and antennas 304 and 305 are placed at both ends of the transistor source terminal 301 and the drain terminal 302, respectively.
  • the polysilicon layer is used to form the two ends 304 and 305 of the antenna.
  • the two ends of the antenna are respectively placed at the source 301 and the drain 302 of the transistor, the transistor gate 303 is located in the middle of the antenna gap, and the transistor gate 303 is also a polysilicon layer, and the gate length is The size is 50 to 300 nm.
  • the transistor gate 303 is subjected to a silicon silicide process to improve conductivity, while the optical antennas 304 and 305 are not subjected to a silicon metallization process to maintain semiconductor characteristics.
  • the gate, source and drain of the optical antenna and transistor are separated by a fill oxide in a standard integrated circuit process.
  • the antenna uses the same polysilicon material as the transistor gate 303, but the doping of the antenna material is achieved by a separate process.
  • the transistor gate 303 is located in the middle of the gap between the antennas 304 and 305, the transistor gate length is 50-300 nm, and the optical antenna and the transistor gate 303, the source 301 and the drain 302 are separated by filling oxides in a standard integrated circuit process. open.
  • the polysilicon optical antennas 304 and 305 can adopt a structure such as a combination of a bow and a dipole.
  • a silicon alloy compound (Silicide) should be avoided on the polysilicon layer optical antenna, and a SAB (silicide block) layer can be used for occlusion realization.
  • the process is that in the silicon metallization production process, the optical antenna is blocked by the photoresist, and then the entire wafer is exposed to metals such as titanium and cobalt (depending on the specific process), and the gate, source and drain of the transistor are completed.
  • a cross-sectional view of the detector structure is shown in Fig. 4.
  • Optical antennas 404 and 405 made of a polysilicon layer are respectively placed at both ends of the transistor source terminal 401 and the drain terminal 402.
  • the optical antenna is in the form of a combination of a dipole and a bow-tie structure
  • the dipole length D is in the range of 1 to 10 micrometers
  • the width W is 1 to 5 micrometers
  • the collar-shaped portion radius L is 5 to 30 microns
  • the angle of the opening angle is 90 to 180 degrees.
  • Terahertz detectors work program based on the optical antenna of the present invention is, with the DC bias voltage V gt over the transistor gate, source grounded, and the drain of floating, the voltage signal output from the drain.
  • the plasma frequency of the antenna is equal to the frequency of the signal to be measured, thereby generating a surface plasmon SPP on the antenna to achieve local enhancement of the terahertz field.
  • FIG. 4 A cross-sectional view of the detector is shown in FIG. 4, and the transistors are located at the gaps of the optical antennas 403 and 404.
  • the local field generated by the optical antenna is in the gap between the antennas, that is, the region where the transistor is located. Due to the rectification of the transistors, these high frequency signals will be rectified, and a DC bias is obtained at the drain end of the transistor. .
  • the equivalent circuit of the whole detector of the present invention is shown in FIG. 5, the DC bias voltage on the gate is V gt , and the AC signal generated by the optical antenna is represented as V ac , and the DC rectified signal read by the drain terminal of the transistor is Where K is the parameter related to the transistor parameters.
  • the plasma frequency of the polysilicon antenna is in the terahertz frequency band.
  • the frequency of the incident terahertz ray is equal to the plasma frequency of the antenna, the optical antenna surface will The surface plasmon SPP is generated, and the terahertz field will be localized at the optical antenna gap.
  • the electric field gain simulation result of the region where the transistor is located can be seen by adjusting the impurity doping concentration of the antenna.
  • the plasma concentration of the antenna is adjusted around 1 THz to enable detection of signals at 1 THz frequency.
  • the optical antenna of the present invention is capable of realizing localized enhancement of the terahertz field, the transistor is located in the enhanced terahertz field, and the transistor has a rectifying action, which can rectify the alternating current signal into a direct current signal to be read by the external circuit.
  • the detector shown in FIG. 5 is an equivalent circuit diagram of the present invention, the AC signal generated by the antenna is V ac, the transistor drain terminal of the DC circuit voltage is rectified, where K is the amount of participation of the transistor parameters.

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Abstract

一种基于光学天线的太赫兹探测器，包括多晶硅材料层制成的光学天线（104,105）、晶体管或场效应管；光学天线（104,105）分别置于晶体管的源极（101）和漏极（102）两端，天线（104,105）边缘距离晶体管栅极（103）边缘间距为100～500nm，光学天线与晶体管源端（101）、漏端（102）和栅端（103）通过标准工艺中填充氧化物隔开；光学天线（104,105）与晶体管栅极（103）采用同一层多晶硅材料，但掺杂通过其他工艺来单独实现，其厚度为100～300nm；光学天线（104,105）采用偶极子天线、领结形天线天线结构，多晶硅材料的掺杂浓度为10 17～10 20；光学天线（104,105）的太赫兹探测器工作方案为，在晶体管栅极（103）上加上直流偏置电压，源极（101）接地，漏极（102）浮空，信号电压从漏极（102）输出。

Description

一种基于光学天线的太赫兹探测器 技术领域
本发明涉及太赫兹信号探测领域，更涉及一种利用光学天线作为信号接收部件的探测器结构，能够实现更大的响应。
背景技术
太赫兹是一种频率介于红外和微波之间的电磁波，其具有很多独特的性能。由于太赫兹的频率很高，其空间分辨率和时间分辨率很高。同时许多非金属极性材料对太赫兹射线吸收较小，因此能够探测材料内部信息，加之太赫兹电磁能量较小，不会对物质产生破坏作用，且生物分子振动和转动频率的共振频率均在太赫兹波段，因此太赫兹在农业和食品加工行业也有着良好的应用前景。目前太赫兹已经给宽带通信、雷达、医学成像、无损检测、安全检查等领域带来了深远的影响。
目前已经有了多种太赫兹信号探测器结构的报道，如文献【F Schuster,Optics Express,Vol.19,No.8,April 2011】中报道的利用顶层金属制作微带天线构成的太赫兹探测器，其结构如图1所示，顶层金属制作的微带天线104和105经过通孔分别与晶体管的源101和漏102相连接，工作时在晶体管栅极103上加合适偏置电压，微带天线产生的交流电压信号加在器件源、漏上，晶体管通过自混频的过程将交流信号整流为直流信号，通过晶体管漏端读出，从而实现对太赫兹信号的探测。该探测器截面如图2所示，天线用顶层金属(假设是3层金属工艺)制作并通过通孔208与第二层金属207相连，并通过通孔206与第一层金属205相连，最终通过通孔204实现与晶体管的源极201和漏端202相连接。该探测器基于标准集成电路工艺技术，能够实现功能的高度集成化，功耗低，且具有成本优势。
但是上述探测器利用的仍是金属制成的传统电波天线，天线尺寸至少为1/2波长，尺寸较大，不利于探测器阵列的集成。同时，电波天线的增益有限，用电波天线制成的探测器电压响应有限。
发明内容
针对上述问题，本发明目的是，提出一种基于光学天线的新型太赫兹探测器，利用光学天线产生的表面等离激元(surface plasmon polariton,SPP)，实现太赫兹波的局域增强，使探测器响应更大，且探测器尺寸得到进一步的缩小。
本发明的技术方案是，一种基于光学天线的太赫兹探测器，包括多晶硅材料层制成的光学天线、晶体管或场效应管；光学天线分别置于晶体管的源极和漏极两端，天线边缘距离晶 体管栅极边缘间距为100～500nm，光学天线与晶体管源端、漏端和栅端通过标准工艺中填充氧化物隔开；光学天线与晶体管栅极采用同一层多晶硅材料，但掺杂通过其他工艺来单独实现，其厚度为100～300nm；光学天线采用偶极子天线、领结形天线天线结构，材料为掺杂多晶硅材料，多晶硅材料的掺杂浓度为1017～1020；光学天线的太赫兹探测器工作方案为，在晶体管栅极上加上直流偏置电压，源极接地，漏极浮空，信号电压从漏极输出。
进一步，采用多晶硅作为天线材料，晶体管栅极部位303位于天线间隙的中间，晶体管栅极303亦为多晶硅层，栅长尺寸为50～300nm。晶体管栅极303做硅金属化(silicide)工艺，以改善导电性，而光学天线304和305不做硅金属化工艺，保持半导体特性。
进一步，光学天线采用偶极子和领结形结构相结合的形式，其偶极子长度D范围为1～10微米，宽度W为1～5微米；领结形部分半径L为5～30微米，张角角度为90～180度。
进一步，通过调节多晶硅材料的掺杂浓度，使天线的等离子体频率等于被测信号的频率，从而在天线上产生表面等离激元SPP，实现太赫兹场的局域增强。
多晶硅材料的掺杂浓度为1017～1020。可以采用n型或P型多晶硅掺杂。且多晶硅光学天线在工艺制造中要避免形成金属硅化物(silicide)。
根据文献【R.B.M.Schafoort,Handbook of surface plasmon resonance,The Royal Society of Chemistry,2008】,材料的等离子体频率与材料的电子浓度n有关，即，其中为电子有效质量。故本发明通过调节多晶硅天线的掺杂浓度，使光学天线的等离子频率等于太赫兹频段。如果太赫兹信号频率等于光学天线的等离子频率，当该太赫兹射线入射到探测器上时，在光学天线表面将会产生表面等离激元SPP，从而实现太赫兹信号场的局域增强效应。同时表面等离激元的波长要比空气中的太赫兹信号波长小的多，故用多晶硅制成的光学天线的尺寸要比用金属制成的电波天线要小的多，整个探测器单元的面积能够大大的缩小，有利于提高探测器阵列的规模和集成度。
本发明的有效效益为：本发明所述的太赫兹探测器利用(掺杂)多晶硅材料制成天线，通过调节多晶硅材料的掺杂浓度，使天线的等离子体频率等于被测信号的频率，从而在天线上产生表面等离激元SPP，实现太赫兹场的局域增强，从而提高探测器的电压响应。
本发明所述的太赫兹探测器利用光学天线产生的SPP实现场的局域增强，而SPP的波长要比空气中太赫兹信号的波长小的多，故光学天线的尺寸要比用金属制成的电波天线小的多，探测器面积得到缩小，有利于探测器大规模阵列的集成。本发明所述的太赫兹探测器利用多晶硅材料作为天线，结构简单，减小了探测器设计难度。
附图说明
图1为基于传统电波天线结构的太赫兹探测器平面图。
图2为基于传统电波天线结构的太赫兹探测器截面图。
图3为本发明所述基于光学天线的太赫兹探测器结构平面图。
图4为本发明所述基于光学天线的太赫兹探测器截面图。
图5为本发明所述的探测器等效电路图。
图6为本发明所述的探测器电场增益仿真结果图。
具体实施例
为使本发明的内容更加清楚，下面将结合附图对本发明实施方式作进一步地详细描述。
图3所示为本发明所述基于光学天线的太赫兹探测器结构平面示意图。采用多晶硅作为天线材料，天线304和305分别置于晶体管源端301和漏端302两端。利用多晶硅层构成天线的两端304和305，天线的两端分别置于晶体管的源301、漏302两端，晶体管栅极303位于天线间隙的中间，晶体管栅极303亦为多晶硅层，栅长尺寸为50～300nm。晶体管栅极303做硅金属化(silicide)工艺，以改善导电性，而光学天线304和305不做硅金属化工艺，保持半导体特性。光学天线和晶体管的栅极、源极和漏极通过标准集成电路工艺中填充氧化物隔开。
天线采用和晶体管栅极303同样的多晶硅材料，但天线材料的掺杂通过单独的工艺来实现。晶体管栅极303位于天线304和305之间间隙的中间，晶体管栅长尺寸为50～300nm，光学天线和晶体管栅极303、源极301和漏极302通过标准集成电路工艺中填充氧化物来隔开。多晶硅光学天线304和305可以采用蝴蝶结、偶极子二者结合等结构，制作时多晶硅层光学天线上要避免形成硅合金化合物(Silicide)，可以利用SAB(silicide block)层来遮挡实现，其具体工艺为，在硅金属化生产工艺中，光学天线上面用光刻胶挡住，然后整个晶圆暴露在钛、钴(视具体工艺而定)等金属中，晶体管栅极、源极和漏极完成硅金属化工艺，以改善导电性，而光学天线仍保持半导体特性。探测器结构截面图如图4所示，用多晶硅层制成的光学天线404和405分别置于晶体管源端401和漏端402的两端。
在本实施例中，光学天线采用偶极子和领结形结构相结合的形式，其偶极子长度D范围为1～10微米，宽度W为1～5微米；领结形部分半径L为5～30微米，张角角度为90～180度。本发明所述基于光学天线的太赫兹探测器工作方案为，在晶体管栅极上加上直流偏置电 压Vgt，源极接地，漏极浮空，信号电压从漏极输出。
通过调节多晶硅材料的掺杂浓度，使天线的等离子体频率等于被测信号的频率，从而在天线上产生表面等离激元SPP，实现太赫兹场的局域增强。
探测器的截面图如图4所示，晶体管位于光学天线403和404的间隙处。
如图4所示，光学天线产生的局域场在天线之间的间隙中，即晶体管所在的区域，由于晶体管的整流作用，这些高频信号将被整流，在晶体管漏端得到一个直流偏压。本发明所述整个探测器等效电路如图5所示，栅极上直流偏置电压为Vgt，光学天线产生的交流信号表示为Vac，则晶体管漏端读出的直流整流信号为，其中K是与晶体管参数有关的参量。
通过调节多晶硅的掺杂浓度(1017～1020)，从而使多晶硅天线的等离子体频率在太赫兹频率波段，当入射太赫兹射线的频率与天线的等离子体频率相等时，光学天线表面将会产生表面等离激元SPP，太赫兹场将会局域在光学天线间隙处，如图6所示为晶体管所在区域电场增益仿真结果图，可以看到通过调节天线的杂质掺杂浓度，能够使天线的等离子浓度调节在1THz附近，从而实现对1THz频率的信号进行探测。
本发明所述的光学天线能够实现太赫兹场的局域增强，晶体管位于增强的太赫兹场中，而晶体管具有整流作用，能够将交流信号整流成直流信号从而被外部电路读出。如图5所示为本发明所述的探测器等效电路图，天线产生的交流信号为Vac，则晶体管漏端整流得到的直流开路电压为，其中K是与晶体管参数有关的参量。
本领域技术人员可以理解附图只是一个优选实例的示意图，并不用一限制本发明，凡在本发明的精神和原则之内，所作的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。

Claims (5)

  1. 一种基于光学天线的太赫兹探测器，其特征是包括多晶硅材料层制成的光学天线、晶体管或场效应管；光学天线分别置于晶体管的源极和漏极两端，天线边缘距离晶体管栅极边缘间距为100～500nm，光学天线与晶体管源端、漏端和栅端通过标准工艺中填充氧化物隔开；光学天线与晶体管栅极采用同一层多晶硅材料，但掺杂通过其他工艺来单独实现，其厚度为100～300nm；光学天线采用偶极子天线、领结形天线天线结构，材料为掺杂多晶硅材料，多晶硅材料的掺杂浓度为1017～1020；光学天线的太赫兹探测器工作方案为，在晶体管栅极上加上直流偏置电压，源极接地，漏极浮空，信号电压从漏极输出。
  2. 根据权利要求1所述的基于光学天线的太赫兹探测器，其特征是采用多晶硅作为天线材料，晶体管栅极部位303位于天线间隙的中间，晶体管栅极303亦为多晶硅层，栅长尺寸为50～300nm。晶体管栅极303做硅金属化(silicide)工艺，以改善导电性，而光学天线304和305不做硅金属化工艺，保持半导体特性。
  3. 根据权利要求1所述的基于光学天线的太赫兹探测器，其特征是光学天线采用偶极子和领结形结构相结合的形式，其偶极子长度D范围为1～10微米，宽度W为1～5微米；领结形部分半径L为5～30微米，张角角度为90～180度。
  4. 根据权利要求1所述的基于光学天线的太赫兹探测器，其特征是通过调节多晶硅材料的掺杂浓度，使天线的等离子体频率等于被测信号的频率，从而在天线上产生表面等离激元SPP，实现太赫兹场的局域增强。
  5. 根据权利要求1所述的基于光学天线的太赫兹探测器，其特征是调节多晶硅的掺杂浓度(1017～1020)，使多晶硅天线的等离子体频率在太赫兹频率波段，当入射太赫兹射线的频率与天线的等离子体频率相等时，光学天线表面将会产生表面等离激元SPP，太赫兹场将会局域在光学天线间隙处，通过调节天线多晶硅材料的杂质掺杂浓度，能够使天线的等离子体频率0.1～10THz之间调节。
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