WO2015181223A1 - Procédé de fabrication d'un capteur et capteur - Google Patents
Procédé de fabrication d'un capteur et capteur Download PDFInfo
- Publication number
- WO2015181223A1 WO2015181223A1 PCT/EP2015/061685 EP2015061685W WO2015181223A1 WO 2015181223 A1 WO2015181223 A1 WO 2015181223A1 EP 2015061685 W EP2015061685 W EP 2015061685W WO 2015181223 A1 WO2015181223 A1 WO 2015181223A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metallic
- deformation body
- sensor
- deformation
- connecting means
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/04—Measuring force or stress, in general by measuring elastic deformation of gauges, e.g. of springs
Definitions
- the invention relates to a method for producing a sensor, which has a deformation element and an evaluation component.
- the invention further relates to such a sensor.
- Generic sensors are widely used for example in automobiles or other means of transport.
- the deformation element is typically formed here such that it changes by a physical quantity to be measured as in ⁇ game as pressure, force or torque in shape. This results in stretching on its surface.
- the evaluation component is typically mechanically connected to the deformation body to absorb this strain and convert it into a measurement signal. By means of this measuring signal can detect a force acting on the deformable body physical quantity a connected circuit, such as a fürsspe ⁇ zifischer integrated circuit (ASIC).
- ASIC a connected circuit
- the mechanical connection between the deformation body and the evaluation component is typically generated by glass solders.
- a composition consisting of glass solder Zvi ⁇ rule layer thereby has the transfer to be measured elongations unaltered from the deformation member on the Ausensebauelement the task.
- the glass solder should typically have a high modulus of elasticity and an adapted thermal expansion coefficient.
- a disadvantage of the use of glass solders are especially high process temperature, the need for a precise temperature profile during Her ⁇ position, a long process time and the need for a complete heating and cooling of deformation element and evaluation component.
- the invention relates to a method for producing a sensor, which has the following steps:
- the glass solder known from the prior art is replaced by a metallic compound.
- sintering techniques may be used in the process of the invention to bring the bonding agent into the desired bonding state.
- the sintering essentially comprises the steps ⁇
- the process time can be significantly reduced by the sintering process and a complete heating and cooling of the deformation body and evaluation component is no longer necessary.
- the deformation body is typically a device that responds to a particular physical quantity such as pressure, force or torque. For example, it can be used to measure forces on a pedal or pressures on a valve or torque in a steering system or on the drive system of an electric bicycle.
- the deformation element is preferably a metal deformation element.
- stainless steel can be used, for example stainless martensitic curable chromium-nickel-copper steel.
- steel of the type 17-4 PH or steel with the material number 1.4542 can be used. This has proven itself in practice and in particular in connection with the method according to the invention.
- the evaluation component is preferably strain-sensitive, so that it can absorb a deformation of the deformation body.
- the connecting means is paste-like or powder-shaped and contains metallic particles.
- the metallic particles are silver particles.
- the deformation element is coated with a metallization with which it is adjacent to the contacting of the metal connecting means on ⁇ .
- a further preferred embodiment which is particularly preferably combined so that Auswer ⁇ tebauelement is coated with a metallization with which it is adjacent binding agent for the matching to the metallic encryption.
- the respective metallization layers preferably adjoin the respective metallization layer before the step of sintering. If both metallization layers are present, the metallic connection means is preferably located between the two metallization layers before the step of sintering.
- connection of the metallic connection means to the deformation body or, respectively can be achieved. be improved to the evaluation device.
- a complete or partial melting of the respective metallization layer in the step of sintering can occur for example, so that a direct material connection between the metal connecting means and the respective Metalli ⁇ s réellestechnik occurs.
- the deformation element and / or the evaluation component have a respective curved surface with which they adjoin the metallic connection means.
- This allows the production of special sensors, for example with a rod-shaped deformation body, which has a different characteristic of the conversion of physical quantities into electrical signals as deformation elements with angular surfaces.
- the deformable body and / or the Ausensebauelement have a depending ⁇ stays awhile flat surface with which they are adjacent to the metallic connecting means.
- the Verfor ⁇ tion body can also be cuboid.
- the method further comprises a step of applying an Application Specific Integrated Circuit (ASIC) to the metallic interconnection means prior to the step of sintering.
- ASIC Application Specific Integrated Circuit
- Such an application-specific integrated circuit can in particular have a logic for evaluation. For example, this logic can be designed to measure changes in the resistors of the evaluation component and in a more easily processed, for example digital .
- the application specific integrated circuit may be implemented in CMOS technology, for example. It may, for example, contain operational amplifiers or other components.
- the application specific integrated circuit is coated with a Metalli ⁇ stechniks slaughter, wherein the application specific integrated circuit is so applied to the metallic compound means that the metallization layer adjacent to the metal connecting means.
- the connection between the application-specific integrated circuit and the metallic connection means can be improved.
- the metallization layer of the application specific integrated circuit advantageously melt at the sintering step, and a cohesive connection with the metallic connection ⁇ medium can enter.
- the invention further relates to a sensor which is produced by means of a method according to the invention.
- a sensor which is produced by means of a method according to the invention.
- FIG. 1 shows a sensor according to a first embodiment
- 2 shows a sensor according to a second exemplary embodiment
- FIG. 3 shows a sectional view through components of a sensor during production.
- Fig. 1 shows a sensor according to a first embodiment.
- the sensor has a cuboid, metallic deformation body 2 and an evaluation component applied thereto in the form of a silicon chip 1.
- the 1 values from ⁇ component is applied directly to the deformable body 2, so that deformation of the deformable body 2 can be detected by the silicon chip.
- the silicon chip 1 contains a full-bridge circuit, not shown, of piezoresistive resistors.
- the sensor shown in Fig. 1 according to the first embodiment is particularly suitable as a force sensor or pressure sensor.
- Fig. 2 shows a sensor according to a second embodiment.
- an evaluation device in the form of a silicon chip 1 is applied to a deformation body 2.
- the deformation body 2 according to the second embodiment not cuboid, but round. He therefore has a curved surface.
- the silicon chip 1 is adapted and has a circular arc segment-shaped, ie curved upper ⁇ surface, with which it adjoins the deformation body 2.
- the sensor according to the second embodiment is suitable.
- Example in particular as a torque sensor. If a torque acts on the sensor, which is represented in FIG. 2 by an arrow designated M, this leads to a rotation of the deformation body 2, and thus to corresponding expansions on the surface of the deformation body 2. Such expansions are produced by the silicon body. Chip 1 converted into a resistance change and can be evaluated.
- Fig. 3 shows a layer sequence of used components and materials of the sensors shown in Figs. 1 and 2 in a state as it occurs during the manufacture of a respective sensor.
- the sequence of layers is shown along the line designated AA.
- AA As can be seen in Fig. 3, is located on the deformable body 2 is first a metallization layer 5. Also, there is a 3.
- the metallization layers 3, 5 are formed more Metalli ⁇ s réelles slaughter of a metallic material which, when on the silicon chip 1 during processing typically reached temperatures melts.
- solder paste 4 is formed of a suitable material, in this case of a tin-silver-copper alloy.
- solder paste 4 is selectively heated. This is done using an induction coil, which is shown in Fig. 1 in a ty ⁇ european arrangement and designated with reference numeral 6.
- the induction coil 6 is an electromagnetic _
- solder paste 4 Generates alternating field which induces 4 eddy currents in the solder paste.
- the solder paste 4 is heated thereby.
- the solder paste melt 4 and up and connect with each other. If the alternating electric field is switched off, the solder paste 4 and the metallization layers 3, 5 cool down again. Since there is a certain mixing at the high temperature, a cohesive connection is formed.
- the silicon chip 1 and the deformation body 2 are materially connected to each other.
- the method described above allows a firm and reliable connection between the silicon chip 1 and the deformation body 2 in a considerably shorter time than in methods which are known in the prior art.
- the heating can be locally limited, which reduces the thermal load on the components.
- Deformation body is changed in shape by the physical quantity to be measured (e.g., pressure, force, torque), thereby causing i.a. on its surface strains or voltages or
- the Si chip converts these expansions via the implemented piezoresistive resistors.
- Metallization layer (3, 5) provided joining partners (1, 2), namely the metallic deformation body (2) and the silicon Chip (1) is a metallic connecting means (4) introduced ⁇ .
- This metallic bonding agent is preferably designed as a solder paste or as a metallic preform.
- An induction loop (6) in the metallic deformation body preferably generates an alternating current flow, which in turn locally generates heat and thus serves as a heat source.
- Fig. 1 shows a metallic deformation body with a
- FIG 3 shows a layer structure according to the invention for joining a metallic deformation body and a Si chip.
- Fig. 1 shows metallic deformation body 2 with Si chip 1, wherein metallic deformation body 2 with Si chip 1 for detecting a force F (represented by an arrow) is formed.
- force F acts on deformation body 2, it bends downwards in FIG. 1, whereby the upper side of deformation body 2, on which Si chip 1 is located, is stretched.
- This strain is passed through the mechanical connection between the deformation body 2 and Si chip 1 to Si chip 1, whereby a piezoresistive resistance in Si chip changes its electrical resistance.
- This change in the electrical resistance depends on the strength of the strain and thus of force F. Determining the change in the electrical resistance value thus makes it possible to determine force F.
- induction loop 6 is also shown, which induces an alternating current flow in metallic deformation body 2 and in a soldering metallic connecting means (not shown in FIG. 1) and thus provides the heat needed to melt the metallic bonding agent.
- Fig. 2 shows round metallic deformation body 2 with Si chip 1, wherein metallic deformation body 2 with Si chip 1 for detecting a torque M (shown by an arrow) is formed.
- a torque M shown by an arrow
- Verfor ⁇ mung body 2 undergoes this particular on its surface, where the Si chip 1 is located, an expansion counter to the direction of rotation of the arrow shown.
- This strain is passed through the mechanical connection between the deformation body 2 and Si chip 1 to Si chip 1, whereby a piezoresistive resistance in Si chip changes its electrical resistance.
- This change in the electrical resistance depends on the strength of the elongation and thus of the torque M. Determining the change in electrical resistance thus allows determination of torque M.
- the layer structure furthermore comprises metallic connecting means 4, which melts with a corresponding supply of heat.
- Metallic connection means 4 is formed as a sintering paste or powder.
- the layer structure exemplified comprises metallization ⁇ layers 3 and 5, which are also melted and produce a mechanically strong connection between the deformation body 2 and Si chip 1.
- the layer structure shown in FIG. 3 does not include the metallization layers 3 and 5.
- the senor comprises a metallic deformation body and a strain-sensitive silicon chip
- the senor is a force, pressure and / or torque sensor.
- At least one signal processing unit is fastened to the deformation element and / or the silicon chip by means of an exothermic reaction.
- the deformation body, the silicon chip and the silver-containing connecting means for joining the Ver ⁇ shaping body and the silicon chip are done one above the other.
- metallization layers are added to the layer structure for joining together.
- Baking especially at a comparatively low temperature and in particular at a short baking time.
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Pressure Sensors (AREA)
Abstract
L'invention concerne un procédé de fabrication d'un capteur ainsi qu'un capteur fabriqué par celui-ci. Le capteur comporte un corps de déformation ainsi qu'un composant d'évaluation. Le corps de déformation et le composant d'évaluation sont liés l'un à l'autre au moyen d'un moyen de liaison métallique. Ceci permet une procédure plus rapide et plus simple qu'avec la soudure de verre, qui est connue dans l'état de la technique.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014210085 | 2014-05-27 | ||
DE102014210085.2 | 2014-05-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015181223A1 true WO2015181223A1 (fr) | 2015-12-03 |
Family
ID=53365998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2015/061685 WO2015181223A1 (fr) | 2014-05-27 | 2015-05-27 | Procédé de fabrication d'un capteur et capteur |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102015209683A1 (fr) |
WO (1) | WO2015181223A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020105214A1 (de) * | 2020-02-27 | 2021-09-02 | Endress+Hauser SE+Co. KG | Vibronischer Multisensor |
DE102020105210A1 (de) | 2020-02-27 | 2021-09-02 | Tdk Electronics Ag | Sensor und Verfahren zur Herstellung eines Sensors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247840A (en) * | 1990-06-29 | 1993-09-28 | Eckardt Ag | Bending element for a force-measuring apparatus |
US20140283632A1 (en) * | 2013-03-19 | 2014-09-25 | Robert Bosch Gmbh | Sensor Device and Method for Producing a Sensor Device |
-
2015
- 2015-05-27 DE DE102015209683.1A patent/DE102015209683A1/de not_active Withdrawn
- 2015-05-27 WO PCT/EP2015/061685 patent/WO2015181223A1/fr active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5247840A (en) * | 1990-06-29 | 1993-09-28 | Eckardt Ag | Bending element for a force-measuring apparatus |
US20140283632A1 (en) * | 2013-03-19 | 2014-09-25 | Robert Bosch Gmbh | Sensor Device and Method for Producing a Sensor Device |
Non-Patent Citations (1)
Title |
---|
ERWIN PEINER: "Die Attach using Pressure-Assisted Sintering for High-Temperature Applications", 27 June 2013 (2013-06-27), XP055205559, Retrieved from the Internet <URL:http://www.elsold.de/fileadmin/englisch/Presse_Downloads/VortragPeiner_ChipAssembling_130627.pdf> [retrieved on 20150730] * |
Also Published As
Publication number | Publication date |
---|---|
DE102015209683A1 (de) | 2016-01-21 |
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