WO2023016920A1 - Liaison d'une puce de capteur à un objet de mesure - Google Patents

Liaison d'une puce de capteur à un objet de mesure Download PDF

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Publication number
WO2023016920A1
WO2023016920A1 PCT/EP2022/071969 EP2022071969W WO2023016920A1 WO 2023016920 A1 WO2023016920 A1 WO 2023016920A1 EP 2022071969 W EP2022071969 W EP 2022071969W WO 2023016920 A1 WO2023016920 A1 WO 2023016920A1
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WO
WIPO (PCT)
Prior art keywords
measurement object
sensor chip
layer
foil
connecting foil
Prior art date
Application number
PCT/EP2022/071969
Other languages
German (de)
English (en)
Inventor
Philipp Lang
Michael Schwab
Nicolas SCHREIBMÜLLER
Original Assignee
Zf Friedrichshafen Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zf Friedrichshafen Ag filed Critical Zf Friedrichshafen Ag
Publication of WO2023016920A1 publication Critical patent/WO2023016920A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0006—Exothermic brazing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • G—PHYSICS
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    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G—PHYSICS
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    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/145—Housings with stress relieving means
    • G—PHYSICS
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    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
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Definitions

  • the invention relates to connecting a sensor chip to a measurement object.
  • a method for attaching the sensor chip to the measurement object and an arrangement of the sensor chip on the measurement object are claimed in particular.
  • the measurement object For various applications it is necessary to attach a sensor chip to a larger mechanical component, the measurement object. This is important for the placement of the sensor system and for interconnecting the physical signals to be measured. Sensors for force measurement or for measuring deformation are heavily dependent on the connection layer between the sensor chip and the measurement object.
  • the measurement object and the sensor chip can consist of different materials such as metal, silicon or an organic material.
  • the tie layer must provide strong adhesion and be dimensionally stable to ensure good force and deformation transfer without (additional and unpredictable) cushioning or time delays. Sensor performance over lifetime depends on long-term stability of compound layer, especially temperature/humidity/chemical stability to avoid signal drift, signal amplitude shrinkage and time lag.
  • the present invention proposes a reactive foil soldering process in order to obtain a particularly intermetallic connection for sensor chips on a larger measurement object.
  • the joining process is based on the use of a reactive multi-layer film as a local heat source.
  • the foil consists of a new class of nanotechnology material in which self-propagating exothermic reactions can be triggered at room temperature by an ignition process.
  • the heat generated by the reaction in the foil melts the solder layers, so that the connections are completed in about one second at room temperature.
  • the heat induced during the reaction is very low due to the fast reaction speed (e.g. 10 m/s) and the small material thickness (e.g. ⁇ 100 pm).
  • a method for connecting a sensor chip to a measurement object is provided.
  • a measurement object is provided.
  • a sensor chip is provided which is set up to record a physical property of a measurement object.
  • a connecting foil is provided which contains metallic materials which react exothermally when activated.
  • the measurement object can be significantly larger than the sensor chip.
  • the measurement object can be, for example, an axle, an engine shaft or a transmission shaft of a motor vehicle.
  • the sensor chip can be set up to measure a deformation, a strain, a force and/or a torque which is generated by the measurement object, in particular by the axis, by the motor shaft or by the transmission shaft.
  • a so-called NanoFoil® from the Indium Corporation can be used as the connecting foil.
  • the NanoFoil® is a reactive multilayer foil made by evaporating thousands of alternating nanoscale layers of aluminum and nickel. When activated by a small pulse of localized energy from electrical, optical or thermal sources, the foil reacts exothermically to generate precise localized heat up to temperatures of 1500°C in fractions of a second.
  • the connecting foil is placed between the sensor chip and the measurement object.
  • the placement can take place in such a way that the connecting foil in a sandwich configuration is in direct contact with surfaces of the sensor chip and the measurement object that face one another.
  • the placement can be such that the connection foil is arranged in a sandwich configuration between two solder layers, the solder layers being applied to mutually facing surfaces of the sensor chip and the measurement object.
  • these surfaces of the sensor chip and the measurement object are flat surfaces that can be brought into contact with one another in order to be welded or soldered.
  • a third method step (300) the metallic materials of the connecting foil are activated so that the connecting foil heats up in such a way that the sensor chip is connected to the measurement object in a materially bonded manner.
  • the activation can take place, for example, by an ignition.
  • the process requires no special heat, no vacuum and no gas atmosphere.
  • the connecting foil can be ignited with a standard 9V battery, for example.
  • the material of the sensor chip and/or the measurement object can be melted or partially melted, so that the sensor chip is welded directly to the measurement object. Alternatively, the sensor chip can be indirectly soldered to the measurement object by melting the solder layers.
  • the metallic connecting layer between the sensor chip and the measurement object that is created by activating the metallic materials of the connecting film has, in particular, high dimensional stability and high thermal conductivity and electrical conductivity. Furthermore, the manufacturing process or the bonding process is simplified, which enables particularly cost-effective production.
  • the method according to the invention is characterized by lower temperatures and stresses during the connection. These lower voltages induce less bias into the sensor chip and increase the performance and stability of the sensor chip. In addition, the low temperatures and low pressure allow for a wider range of materials such as polymers.
  • the bond between the sensor chip and the measurement object produced by the method according to the invention does not age with time and temperatures. Steam, pressure or the like do not cause any change in the parameters of the connection.
  • the composite material metal
  • the composite material is particularly resistant to moisture, chemicals, high/low temperatures and rapid temperature changes. The composite therefore does not change its parameters, particularly as a result of temperature, humidity, pressure or the like.
  • the composite material (particularly metal) still offers elastic deformation for repeatability.
  • Solder layers can be applied to the sensor chip and the measurement object in a particularly advantageous manner. This takes place in particular before the connecting film is placed between the sensor chip and the measurement object in the second method step (200). Subsequent activation of the connection foil generates sufficient heat to melt the solder layers and to solder the sensor chip to the measurement object. In this sense, according to one embodiment, it is provided that
  • a first layer of solder is applied to the sensor chip and a second layer of solder is applied to the measurement object,
  • step (200) between the first layer of solder and the second layer of solder, and - the metallic materials of the connecting foil are activated in step (300), so that the connecting foil heats up in such a way that the first soldering layer and the second soldering layer melt and the sensor chip is soldered to the measurement object by the melted first soldering layer and the melted second soldering layer.
  • solder layers can consist of copper, gold, palladium or nickel, for example. These materials can be applied as metallic starting layers (first and second soldering layer) particularly advantageously by plasma methods, sputtering methods or vapor deposition on surfaces of the parts to be connected (sensor chip, measurement object) that face one another. Other options are two-shot injection molding, additive manufacturing, etc.
  • the connecting foil can be shaped particularly precisely and efficiently by laser cutting to the dimensions of the desired joining surface and placed between the two surfaces. This takes place in particular before the connecting film is placed between the sensor chip and the measurement object in step (200). In this sense, according to a further embodiment, it is provided that the connecting film is processed by laser cutting in such a way that the connecting film assumes a shape and dimensions that cover an intended joint surface between the sensor chip and the measurement object.
  • an additional nose of the connecting foil can be brought out of the connecting layer in order to facilitate access for ignition by means of a wire or heat needle.
  • the connecting film has an activation section (e.g. in the form of the aforementioned nose) which is not covered by the sensor chip and/or the measurement object and which is used to apply an activation means (e.g. the aforementioned wire , the heat needle or battery) is freely accessible.
  • a fixing pad can be placed on the layers with little pressure.
  • a fixing pad which exerts pressure on the sensor chip and/or the measurement object, counteracts deformation of the solder layers and the connecting film during activation and connection in step (300).
  • the pressure is so low that it does not lead to any stresses within the sensor chip and/or the measurement object, which could impair the strength of the connection between the sensor chip and the measurement object or the measurement accuracy.
  • the sensor chip can have a metal surface in order to ensure an optimal connection between the metal measurement object and the sensor chip. This connection is particularly relevant for the measurement accuracy of the sensor chip.
  • the first soldering layer is applied to a metallic surface of the sensor chip, with the second soldering layer being applied to a metallic surface of the measurement object.
  • an intermetallic bond (“material bond”) can be created between the sensor chip and the measurement object, which does not require high temperatures, pressures, electromagnetic fields, etc. for production.
  • This intermetallic connection can be created in particular between a metallic housing part of the sensor chip and a metallic part of the measurement object (which can also consist entirely of metal).
  • the intermetallic compound enables 1:1 signal transmission from the measurement object to the sensor chip.
  • the sensor chip has a housing with a first metallic surface to which the first soldering layer is applied and that the measurement object has a second metallic surface to which the second soldering layer is applied.
  • connection method according to the present invention is also suitable for so-called “bare die” silicon sensor chips (micro electro mechanical systems MEMS) due to the elimination or reduction of compressive stresses.
  • bare die silicon sensor chips micro electro mechanical systems MEMS
  • Such sensor chips can have an outer layer of silicon facing the measurement object.
  • Such sensor chips are not installed in a housing, but can be connected to the measurement object via the silicon layer to which the silver particles are applied.
  • the sensor chip has no housing
  • the sensor chip has a silicon layer facing the measurement object
  • the connecting foil is placed in step between the silicon layer and the measurement object
  • step 10 The metallic materials of the connecting film are activated in step 10, so that the connecting film heats up in such a way that the silicon layer of the sensor chip is connected to the measurement object in a materially bonded manner.
  • the measurement object can be provided with a form-fitting surface structure, which is not only connected in a material-to-material manner, but also in a form-fitting manner, by means of the connecting film and/or the soldering layers.
  • the form-fitting surface structure can have channels with or without undercuts, for example.
  • This form-fitting surface structure can be produced consciously or actively, e.g. using known methods for treating MEMS surfaces.
  • the molten layer produced by the activation in step (300) can penetrate into interstices of the interlocking surface structure and get caught or anchored therein during the subsequent solidification (interlocking). This can be done by arranging the connecting film between the sensor chip and the form-fitting surface structure of the measurement object.
  • the connecting film can be arranged between the first soldering layer and the second soldering layer, with the first soldering layer being in contact with the sensor chip and the second soldering layer being in contact with the form-fitting surface structure of the measurement object.
  • the measurement accuracy can be improved to a large extent by the positive fit described above. In this sense, it is provided in a further embodiment that
  • a surface of the measurement object to be connected to the sensor chip is provided with a form-fitting surface structure before step (100), - in step (200) the connecting film is placed between the sensor chip and the form-fitting surface structure of the measurement object, and
  • step (300) the metallic materials of the connecting film are activated so that the connecting film heats up in such a way that the sensor chip is connected to the form-fitting surface structure of the measurement object in a material-to-material and form-fitting manner.
  • the measurement object can have a macroscopic form-fitting structure, e.g. in the form of a recess matching the sensor chip, into which the sensor chip can be inserted.
  • the detectable measured variable can also be increased by special structures (force shunt) of the measurement object.
  • Special structures in the measurement object can be used to increase, reduce or filter the forces in certain directions. Similar to connection techniques or in gear design, forces can be distributed or directed in this way.
  • the measurement object can form a base that protrudes from an outer surface of the measurement object to which the sensor chip is attached and which causes a reduction in force.
  • depressions, ribs or beads are also possible, for example, which increase or reduce forces in certain spatial directions, as is the case, for example, with a bead in a metal sheet.
  • the advantage lies in a particularly precise control of the sensor chip by amplifying or reducing a desired direction of force. As a result, the same sensor chip can be used for different measuring ranges without the sensor chip itself having to be adapted.
  • an arrangement of a sensor chip on a measurement object wherein the sensor chip has been connected to the measurement object by a method according to a method according to the first aspect of the invention.
  • FIG. 1 shows a side view of an exemplary embodiment of an arrangement according to the invention of a sensor chip on a measurement object, the sensor chip being attached to the measurement object by means of a connecting film,
  • FIG. 2 shows two perspective views of an upper side and an underside of a housing for the sensor chip according to FIG. 1 ,
  • FIG. 3 shows an exploded view of layers and tools for connecting a sensor chip to a measurement object by means of a connecting film and the arrangement resulting from the connection
  • FIG. 4 shows a sequence of a method according to the invention for connecting the sensor chip to the measurement object according to FIG. 1 or 3 and
  • FIG. 5 shows a greatly enlarged cross-sectional view of a connecting foil for the arrangement according to FIGS. 1 and 3.
  • FIG. 1 shows an arrangement of a sensor chip 1 on a measurement object 2, the sensor chip 1 having been connected to the measurement object 2 by a method according to FIG.
  • the sensor chip 1 shown in FIG. 1 has a housing 3 which at least partially surrounds the sensor chip 1 .
  • a sensor chip surface 4 of the housing 3 facing the measurement object 2 has a metallic layer 5 .
  • the measurement object 2 can in particular be significantly larger than the sensor chip 1 .
  • the measurement object 2 can be, for example, an axle, an engine shaft or a transmission shaft of a motor vehicle, in which case the sensor chip 1 can be set up to measure a deformation, a strain, a tension, a force and/or a torque which or .that of the axis, the motor shaft or generated by the transmission shaft.
  • the sensor chip 1 may be a silicon chip having variable resistances responsive to deformation. This allows conclusions to be drawn about the deformation in the measurement object 2 in proportion to the quality of the connection with the measurement object 2 .
  • a connecting film 10 enables the sensor chip 1 to be firmly connected to the measurement object 2.
  • This connection transmits forces of the measured variable as well as disturbance variables due to thermal expansion.
  • the type of connection places demands on the surface quality of the measurement object 2 and the sensor chip 1.
  • Two force arrows F shown on the far right in FIG. 1 illustrate an exchange of forces through deformation, which represents the actual measurement variable.
  • a bidirectional force arrow F is shown to the left, which illustrates an exchange of forces through stresses and through different thermal expansion, which represents a disturbance variable.
  • the measurement object 2 has a measurement object surface 6 which faces the metallic layer 5 and is provided with a form-fitting surface structure 7 .
  • the measurement object surface 6 and the form-fitting surface structure 7 consists of a metal (in particular the same metal from which the remaining part of the measurement object 2 is made) and is located on a base 8.
  • the base 8 is formed by the measurement object 2 .
  • the base 8 protrudes radially from an outer surface 9 of the measurement object 2 .
  • the sensor chip 1, the measurement object 2 and the connecting film 10 are provided.
  • the connecting foil 10 is a NanoFoil®, a reactive multilayer foil that is produced by vapor deposition of thousands of alternating nanoscale layers of aluminum 11 and nickel 12 (FIG. 5).
  • the bonding foil 10 reacts exothermically to generate precise localized heat up to temperatures of 1500°C in fractions of a second.
  • the connecting film 10 is placed between the sensor chip 1 and the measurement object 2, as shown in FIG.
  • the connecting foil 10 touches the metallic layer 5 of the sensor chip surface 4 of the housing 3 on one side and the form-fitting surface structure 7 of the measurement object 1 on the other side.
  • the aluminum layers 11 and the nickel layers 12 are still arranged alternately next to one another, as is shown by FIG.
  • a third method step 300 the aluminum layers 11 and the nickel layers 12 of the connecting foil 10 are activated by means of an ignition source.
  • the nickel layers 12 of the connecting foil 10 then react strongly exothermically, so that the metallic layer 5 of the housing 3 of the sensor chip 1 is welded to the form-fitting surface structure 7 of the measurement object 1 (material connection). Furthermore, melted material of the aluminum layers 11 and/or the nickel layers 12 can penetrate into gaps in the form-fitting surface structure 7 of the measurement object 2 and, after solidification, cause a form-fitting connection between the housing 3 of the sensor chip 1 and the measurement object 2 .
  • the detectable measurement variable can be increased by special structures (force shunt) of the measurement object 2.
  • the base 8 causes a reduction in force.
  • the measurement object 2 can also form indentations, ribs, beads or the like, for example, which increase or decrease forces in certain spatial directions.
  • the housing 3 can be omitted and the sensor chip 1 can have a silicon layer 5 ′ facing the measurement object 2 , which replaces the metallic layer 5 .
  • the connecting foil 10 can be arranged between the silicon layer 5 ′ between the silicon layer 5 ′ of the sensor chip 1 and the form-fitting surface structure 7 of the measurement object 2 , activated and materially and form-fittingly bonded to the silicon layer 5 ′ and to the form-fitting surface structure 7 get connected.
  • FIG. 3 shows a roughly schematic view of a sensor chip 101 which is connected to a measurement object 102 at least in a materially bonded manner.
  • the measurement object 102 can be significantly larger than the sensor chip 101 .
  • the measurement object 102 can be, for example, an axle, an engine shaft or a transmission shaft of a motor vehicle, in which case the sensor chip 101 can be set up to measure a deformation, an elongation, a tension, a force and/or a torque which or .that is generated by the axle, the motor shaft or the transmission shaft.
  • the sensor chip 101 may be a silicon chip that has variable resistances that respond to deformation. This allows conclusions to be drawn about the deformation in the measurement object 102 in proportion to the quality of the connection to the measurement object 102 .
  • the sensor chip 101, the measurement object 102 and a connecting foil 103 are provided, which can be the same connecting foil 10 as shown in FIGS. 1 and 5 (NanoFoil®).
  • a first soldering layer 104 (e.g. made of copper) was previously applied to the sensor chip 101 (in particular to a metallic surface of a housing of the sensor chip 101; cf. FIGS. 1 and 2) and a second Solder layer 105 (e.g. also made of copper) was applied to the measurement object 102, in particular to a metallic surface of the measurement object (cf. FIG. 1).
  • the metallic surface of the measurement object 101 can form a form-fitting surface structure similar to that shown by FIG. 1 .
  • the connecting foil 103 was previously processed by laser cutting in such a way that the connecting foil 103 assumes a shape and dimensions that cover an intended joining surface 106 between the sensor chip 101 and the measurement object 102 .
  • the connecting film 103 was cut in such a way that it has an activation section 107 which is not covered by the sensor chip 101 in the exemplary embodiment shown and is therefore freely accessible for applying an activation means 108 (eg a voltage source in the form of a battery).
  • the connecting foil 110 is placed between the first soldering layer 104 and the second soldering layer 105 in step 200 .
  • the activation section 107 protrudes from the stack formed by the sensor chip 101, the measurement object 102 and the two solder layers 104, 105 when all layers are in contact with one another.
  • a fixing pad 109 exerts a pressure p via a flexible layer 110 on the stack formed by the sensor chip 101, the measurement object 102 and the two solder layers 104, 105.
  • This pressure is very low and acts perpendicularly on an outer surface 111 of the sensor chip 101, in particular on its housing (cf. FIG. 1).
  • the pressure serves to counteract deformation of the solder layers 104, 105 and the connection foil 103 during the activation and connection in step (300).
  • a third method step 300 the aluminum layers 11 and the nickel layers 12 (cf. FIG. 5) of the connecting foil 103 are activated by means of the activating agent 108.
  • the aluminum layers 11 and the nickel layers 12 of the connecting foil 103 then react strongly exothermically, so that the connecting foil 103 heats up in such a way that the first soldering layer 104 and the second soldering layer 105 melt and the sensor chip 101 is soldered to the measurement object 102 through the melted soldering layers 104, 105 as shown by the right part of FIG.
  • melted material, in particular of the second soldering layer 105 can penetrate into gaps in the form-fitting surface structure of the measurement object 102 and, after solidification, cause a form-fit connection between the sensor chip 101 and the measurement object 102.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Child & Adolescent Psychology (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

L'invention concerne un procédé de liaison d'une puce de capteur (1) à un objet de mesure (2). Selon le procédé, un objet de mesure (2), une puce de capteur (1) et une feuille de liaison (10) sont prévus, la feuille de liaison (10) contenant des matériaux métalliques (11, 12) qui, lors de l'activation, réagissent de manière exothermique. La feuille de liaison (10) est placée entre la puce de capteur (1) et l'objet de mesure (2), et les matériaux métalliques (11, 12) de la feuille de liaison (10) sont activés de telle sorte que la feuille de liaison (10) est chauffée de telle manière que la puce de capteur (1) est liée à l'objet de mesure (2).
PCT/EP2022/071969 2021-08-11 2022-08-04 Liaison d'une puce de capteur à un objet de mesure WO2023016920A1 (fr)

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DE102021208761.2A DE102021208761A1 (de) 2021-08-11 2021-08-11 Verbindung eines Sensorchips mit einem Messobjekt

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023232377A1 (fr) * 2022-05-31 2023-12-07 Zf Friedrichshafen Ag Connexion d'une puce de capteur à un objet de mesure
WO2024033037A1 (fr) * 2022-08-11 2024-02-15 Zf Friedrichshafen Ag Liaison d'une jauge de contrainte à un objet de mesure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070105341A1 (en) * 2005-11-09 2007-05-10 The Regents Of The University Of California Bonding metals and non-metals using inductive heating
DE102018102918A1 (de) * 2018-02-09 2019-08-14 Endress+Hauser SE+Co. KG Differenzdrucksensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070105341A1 (en) * 2005-11-09 2007-05-10 The Regents Of The University Of California Bonding metals and non-metals using inductive heating
DE102018102918A1 (de) * 2018-02-09 2019-08-14 Endress+Hauser SE+Co. KG Differenzdrucksensor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
QIU ET AL: "Bonding silicon wafers with reactive multilayer foils", SENSORS AND ACTUATORS A: PHYSICAL, ELSEVIER BV, NL, vol. 141, no. 2, 23 October 2007 (2007-10-23), pages 476 - 481, XP022452392, ISSN: 0924-4247, DOI: 10.1016/J.SNA.2007.10.039 *
SPIES IRINA ET AL: "Acceleration measurements during reactive bonding processes", 2017 21ST EUROPEAN MICROELECTRONICS AND PACKAGING CONFERENCE (EMPC) & EXHIBITION, IMAPS EUROPE, 10 September 2017 (2017-09-10), pages 1 - 6, XP033335164, DOI: 10.23919/EMPC.2017.8346881 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023232377A1 (fr) * 2022-05-31 2023-12-07 Zf Friedrichshafen Ag Connexion d'une puce de capteur à un objet de mesure
WO2024033037A1 (fr) * 2022-08-11 2024-02-15 Zf Friedrichshafen Ag Liaison d'une jauge de contrainte à un objet de mesure

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