WO2015180238A1 - Led灯丝 - Google Patents

Led灯丝 Download PDF

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Publication number
WO2015180238A1
WO2015180238A1 PCT/CN2014/081844 CN2014081844W WO2015180238A1 WO 2015180238 A1 WO2015180238 A1 WO 2015180238A1 CN 2014081844 W CN2014081844 W CN 2014081844W WO 2015180238 A1 WO2015180238 A1 WO 2015180238A1
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WO
WIPO (PCT)
Prior art keywords
substrate
led filament
light
protrusions
fluorescent
Prior art date
Application number
PCT/CN2014/081844
Other languages
English (en)
French (fr)
Inventor
马文波
廖秋荣
Original Assignee
惠州市华瑞光源科技有限公司
华瑞光电（惠州）有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 惠州市华瑞光源科技有限公司, 华瑞光电（惠州）有限公司 filed Critical 惠州市华瑞光源科技有限公司
Priority to US15/314,320 priority Critical patent/US9982854B2/en
Priority to EP14893522.4A priority patent/EP3154097B1/en
Publication of WO2015180238A1 publication Critical patent/WO2015180238A1/zh

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Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S4/00—Lighting devices or systems using a string or strip of light sources
    • F21S4/20—Lighting devices or systems using a string or strip of light sources with light sources held by or within elongate supports
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/235—Details of bases or caps, i.e. the parts that connect the light source to a fitting; Arrangement of components within bases or caps
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/20—Light sources comprising attachment means
    • F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
    • F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2103/00—Elongate light sources, e.g. fluorescent tubes
    • F21Y2103/10—Elongate light sources, e.g. fluorescent tubes comprising a linear array of point-like light-generating elements
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00—Light-generating elements of semiconductor light sources
    • F21Y2115/10—Light-emitting diodes [LED]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements

Definitions

  • the present invention relates to the field of LED technology, and in particular to an LED filament.
  • LED As a new light source, LED has been widely used in various lighting facilities due to its energy saving effect and long life.
  • White LED Known as the fourth generation of lighting sources to replace fluorescent and incandescent lamps. led The principle of incandescent tungsten filament illumination and fluorescent three-primary toner illumination has been changed. The use of electric field illumination has the advantages of high luminous efficiency, no radiation, long life, low power consumption and environmental protection.
  • the conventional LED bracket is generally a small-sized bowl-shaped cup, and the LED filament packaged by the LED has a small illumination angle, and cannot achieve the filament-like luminous effect with the incandescent lamp.
  • the illumination angle is still not very good to achieve the filament-like luminous effect of the incandescent lamp.
  • An LED filament comprising: an elongated substrate, a plurality of light emitting units disposed on a first surface of the substrate and distributed along a direction in which the substrate extends, and a first surface covering the substrate and the plurality of a fluorescent layer on the light-emitting unit, at least one side of the substrate is provided with a plurality of protrusions, the protrusions are distributed along the extending direction of the substrate; the fluorescent light emitted by the light-emitting unit A portion of the light excited by the glue layer is emitted from between the adjacent protrusions toward a second surface of the substrate opposite the first surface.
  • the plurality of protrusions are respectively disposed on two opposite sides of the substrate
  • the plurality of protrusions on the same side of the substrate are equally spaced.
  • the plurality of protrusions form a wavy or zigzag structure on a side of the substrate.
  • the orthographic projection of the phosphor layer on the first surface of the substrate covers the first surface of the substrate.
  • the area of the orthographic projection is greater than the area of the first surface of the substrate.
  • the cross-sectional shape of the fluorescent glue layer perpendicular to the extending direction of the substrate is semicircular, semi-elliptical or rectangular.
  • the width of the phosphor layer is greater than or equal to the widest width of the substrate.
  • the LED filament further includes a pin and an insulating connection connecting the pin and the substrate.
  • the minimum width of the substrate is between 60% and 80% of the maximum width.
  • the LED filaments are arranged such that the light source emitted by the light-emitting unit can be emitted toward the opposite side of the substrate covering the fluorescent glue layer, thereby increasing the illumination angle of the LED filament.
  • 1 is a schematic structural view of an LED filament in an embodiment
  • FIG. 2 is a side view of the LED filament shown in FIG. 1.
  • FIG. 1 it is a schematic structural view of an LED filament 10 of an embodiment.
  • the LED filament 10 includes an elongated substrate 100, a plurality of light emitting units 200 disposed on the first surface of the substrate 100 and distributed along the extending direction of the substrate 100, and a cover on the first surface of the substrate 100 and the light emitting unit 200.
  • a light transmissive phosphor layer 300 (see FIG. 2), a pin 400, and an insulating connector 500 connecting the pin 400 and the substrate 100.
  • a plurality of protrusions 110 are disposed on at least one side of the substrate 100, and the protrusions 110 are distributed along the extending direction of the substrate 100.
  • the phosphor layer 300 also covers the projections 110 and the area between the adjacent two projections 110.
  • a plurality of protrusions 110 are respectively disposed on the two opposite sides of the substrate 100.
  • the plurality of protrusions 110 are symmetrically disposed, and the minimum width of the substrate 100 is 60% to 80% of the maximum width.
  • the plurality of projections 110 on the same side surface of the substrate 100 are arranged at equal intervals.
  • the plurality of projections 110 are formed in a wave shape or a zigzag shape on the side of the substrate 100, and the edges of the substrate 100 are wavy or zigzag.
  • the substrate 100 and the protruding portion 110 are made of copper. It can be understood that the substrate 100 can also be made of other conductive heat dissipating materials such as aluminum, iron, and the like.
  • the protrusion 110 may also be located on one side of the substrate 100. The spacing between the projections 110 may also be unequal.
  • the protrusions 110 on both sides of the substrate 100 may be staggered, and the protrusions 110 on the side of the substrate 100 are located between the two protrusions 110 on the other side of the substrate 100.
  • the protruding portion 110 may have a rectangular shape or the like. When the protruding portion 110 has a rectangular shape, the edge of the substrate 100 has a tooth shape.
  • the substrate 100 has a length of 30 mm and a thickness of 0.4 mm, the substrate 100 has a width of 1 mm at the widest point, and a narrowest portion of 0.7 mm.
  • the substrate 100 has eight projections 110 on each side of 10 mm.
  • the substrate 100 can also be of other sizes. Further, the ratio of the widest portion to the narrowest portion of the substrate 100 may be other values.
  • the plurality of light emitting units 200 are disposed on the substrate 100 at equal intervals along the extending direction of the substrate 100.
  • the plurality of light emitting units 200 are arranged in a row, and the distance between the plurality of light emitting units 200 and the opposite sides of the substrate 100 is equal.
  • the plurality of light emitting units 200 are electrically connected in series. A portion of the light emitted by the light-emitting unit 200 excited by the fluorescent gel layer 300 is emitted from between the adjacent protruding portions 110 toward the second surface of the substrate 100 opposite to the first surface. According to the actual situation, the number of the light emitting units 200 may be 20 or other numbers.
  • the light emitting unit 200 can employ a blue LED chip.
  • FIG. 2 is a side view of the LED filament 10 shown in FIG. 1.
  • the fluorescent adhesive layer 300 includes a phosphor and an adhesive, and the phosphor is uniformly located in the adhesive.
  • the phosphor is YAG yellow powder. It will be appreciated that other phosphors such as silicates, aluminates, nitrides, and the like may also be employed.
  • the surface of the fluorescent adhesive layer 300 is a curved surface, and the cross-sectional shape of the fluorescent adhesive layer 300 perpendicular to the extending direction of the substrate 100 is semicircular or semi-elliptical.
  • the surface width of the fluorescent adhesive layer 300 connected to the substrate 100 is equal to the maximum width of the substrate 100 and the protruding portion 110 as a whole.
  • the width of the fluorescent adhesive layer 300 is greater than or equal to the widest width of the substrate 100.
  • the orthographic projection of the fluorescent adhesive layer 300 on the first surface of the substrate 100 covers the first surface of the substrate 100, and the area of the orthographic projection is larger than the area of the first surface of the substrate 100.
  • the phosphor layer 300 may have a width of 1.2 mm. According to the actual situation, the width of the fluorescent rubber layer 300 may also be other values, such as 1.3 mm. Further, the cross-sectional shape of the fluorescent adhesive layer 300 perpendicular to the extending direction of the substrate 100 may be other shapes such as a rectangular shape.
  • the light source emitted by the light emitting unit 200 is refracted outside the fluorescent glue layer 300 through the fluorescent adhesive layer 300. Due to the arrangement of the projections 110, the light source can be emitted through the narrowest portion of the substrate 100 toward the opposite side of the substrate 100 covering the side of the phosphor layer 300.
  • the light source emitted by the light-emitting unit 200 absorbs part of the blue light by the fluorescent glue layer 300 to emit yellow light having a longer wavelength, and the yellow light and the remaining blue light are mixed in a certain ratio to synthesize different color temperatures, which are displayed as white light.
  • the protruding portion 110 is disposed such that the light source emitted from the light emitting unit 200 can be emitted toward the opposite side of the substrate 100 covering the fluorescent adhesive layer 300, thereby increasing the light emitting angle of the LED filament 10.
  • the protruding portion 110 allows the fluorescent adhesive layer 300 to be more stably attached to the substrate 100 without being too narrow with the covering surface of the substrate 100, thereby causing the fluorescent adhesive layer 300 to fall off. Since the substrate 100 is made of a metal heat conductive material, and the substrate 100 is covered with the fluorescent rubber layer 300, the heat dissipation effect of the substrate 100 is better, thereby solving the problems that the LED filament 10 cannot be subjected to a large current and an excessive cost.

Abstract

一种LED灯丝（10），包括：长条状的基板（100）、设置在所述基板（100）上第一表面且沿所述基板（100）延伸方向分布的多个发光单元（200），以及覆盖在所述第一表面和所述多个发光单元（200）上的可透光的荧光胶层（300），所述基板（100）的至少一个侧边上设有多个凸出部（110），所述凸出部（110）沿所述基板（100）的延伸方向分布；所述发光单元（200）发出的经所述荧光胶层（300）激发的光的一部分由相邻的所述凸出部（110）之间向所述基板（100）的与所述第一表面相对的第二表面的方向射出。

Description

LED灯丝
【技术领域】
本发明涉及LED技术领域，特别是涉及一种LED灯丝。
【背景技术】
LED作为一种新的光源，因其节能效果好、长寿命等优点，已广泛应用于各种照明设施。白光LED 被誉为替代荧光灯和白炽灯的第四代照明光源。LED 改变了白炽灯钨丝发光与荧光灯三基色粉发光的原理，利用电场发光，具有光效高、无辐射、寿命长、低功耗和环保的优点。
传统的LED支架一般为小体积碗杯状，由其封装成的LED灯丝的发光角度较小，无法达到与白炽灯灯丝状的发光效果。目前市场上虽然有条状LED灯丝，但是其发光角度仍然无法很好达到与白炽灯灯丝状的发光效果。
【发明内容】
基于此，有必要提供一种发光角度较大的LED灯丝。
一种LED灯丝，包括：长条状的基板、设置在所述基板的第一表面且沿所述基板延伸方向分布的多个发光单元，以及覆盖在所述基板的第一表面和所述多个发光单元上的荧光胶层，所述基板的至少一个侧边上设有多个凸出部，所述凸出部沿所述基板的延伸方向分布；所述发光单元发出的经所述荧光胶层激发的光的一部分由相邻的所述凸出部之间向所述基板的与所述第一表面相对的第二表面的方向射出。
在一个实施例中，所述多个凸出部分别设于所述基板的两个相背侧边
在一个实施例中，位于所述基板同一侧边的所述多个凸出部等间距排列。
在一个实施例中，多个所述凸出部在所述基板的侧边形成波浪状或锯齿状结构。
在一个实施例中，所述荧光胶层在所述基板的第一表面的正投影覆盖所述基板的第一表面。
在一个实施例中，所述正投影的面积大于所述基板的第一表面的面积。
在一个实施例中，所述荧光胶层与所述基板延伸方向垂直的截面形状为半圆形、半椭圆形或矩形。
在一个实施例中，所述荧光胶层的宽度大于或等于所述基板的最宽宽度。
在一个实施例中，所述LED灯丝还包括引脚以及连接所述引脚和所述基板的绝缘连接件。
在一个实施例中，所述基板的最小宽度为最大宽度的60%~80%。
上述LED灯丝，凸出部的设置令发光单元发出的光源可向基板覆盖荧光胶层一侧的相对侧射出，从而增大了LED灯丝的发光角度。
【附图说明】
图1为一实施例中的LED灯丝的结构示意图；
图2为图1所示的LED灯丝的侧视图。
【具体实施方式】
如图1所示，其为一实施例种的LED灯丝10的结构示意图。
LED灯丝10，包括：长条状的基板100、设置在基板100的第一表面且沿基板100延伸方向分布的多个发光单元200、覆盖在基板100的第一表面和发光单元200上的可透光的荧光胶层300（见图2）、引脚400以及连接引脚400和基板100的绝缘连接件500。基板100的至少一个侧边上设有多个凸出部110，凸出部110沿基板100的延伸方向分布。荧光胶层300还覆盖凸出部110以及相邻两个凸出部110之间的区域。
基板100的两个相背侧边分别设有多个凸出部110。多个凸出部110对称设置，基板100的最小宽度为最大宽度的60%~80%。位于基板100同一侧面的多个凸出部110等间距排列。多个凸出部110在基板100的侧边形成波浪状或锯齿状，既基板100的边沿为波浪状或锯齿状。
基板100及凸出部110均为铜制成。可以理解，基板100也可由其他导电散热材料制成，如铝、铁等。凸出部110也可以位于基板100的一侧。凸出部110之间的间隔也可以不相等。此外，基板100两侧的凸出部110可以交错排列，既基板100一侧的凸出部110，位于基板100另一侧相邻两个凸出部110之间。凸出部110同样可以为矩形状等，当凸出部110为矩形时，基板100的边沿为齿形状。需要指出的是，基板100的长度为30mm，厚度为0.4mm，基板100最宽处为1mm，最窄处为0.7mm，基板100每侧10mm具有8个凸出部110。基板100也可为其他规格。此外，基板100最宽处与最窄处的比值也可以为其他数值。
发光单元200为多个。多个发光单元200沿基板100的延伸方向等间隔设置于基板100上。多个发光单元200排成一列，且多个发光单元200到基板100相对的两边距离相等。多个发光单元200串联电连接。发光单元200发出的经荧光胶层300激发的光的一部分由相邻的凸出部110之间向基板100的与第一表面相对的第二表面的方向射出。根据实际情况，发光单元200可为20个，也可为其他数量。发光单元200可采用蓝光LED芯片。
请一并参阅图2，其为图1所示的LED灯丝10的侧视图。
荧光胶层300包括荧光粉及粘胶，荧光粉均匀位于粘胶内。本实施例中，荧光粉为YAG黄粉。可以理解，也可以采用其他诸如硅酸盐、铝酸盐、氮化物等材料的荧光粉。荧光胶层300的表面为弧面，既荧光胶层300与基板100延伸方向垂直的截面形状为半圆形或半椭圆形。荧光胶层300与基板100相连的表面宽度等于基板100与凸出部110整体的最大宽度，也可以理解为，荧光胶层300的宽度大于或等于基板100的最宽宽度。荧光胶层300在基板100的第一表面的正投影覆盖基板100的第一表面，且该正投影的面积大于基板100的第一表面的面积。荧光胶层300的宽度可为1.2mm。根据实际情况，荧光胶层300的宽度也可以为其他数值，如1.3mm等。此外，荧光胶层300与基板100延伸方向垂直的截面形状也可以为矩形等其他形状。
上述LED灯丝10，发光单元200发出的光源通过荧光胶层300折射到荧光胶层300外部。由于凸出部110的设置，令光源可以通过基板100的最窄处，向基板100覆盖荧光胶层300一侧的相对侧射出。发光单元200发出的光源，由荧光胶层300吸收部分蓝光而发出波长更长的黄光，黄光与剩余的蓝光按照一定比例混合后合成不同的色温，显示为白光。
上述LED灯丝10，凸出部110的设置令发光单元200发出的光源可向基板100覆盖荧光胶层300一侧的相对侧射出，从而增大了LED灯丝10的发光角度。此外，凸出部110令荧光胶层300更稳定的贴附于基板100上，不会因与基板100的覆盖面过窄，从而令荧光胶层300脱落。由于基板100为金属导热材料制成，且基板100一侧覆盖荧光胶层300，令基板100的散热效果更好，从而解决LED灯丝10不能大电流、成本过高等问题。
以上所述实施例仅表达了本发明的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。

Claims (10)

  1. 一种LED灯丝，包括：长条状的基板、设置在所述基板的第一表面且沿所述基板延伸方向分布的多个发光单元，以及覆盖在所述基板的第一表面和所述多个发光单元上的荧光胶层，其特征在于，所述基板的至少一个侧边上设有多个凸出部，所述凸出部沿所述基板的延伸方向分布；
    所述发光单元发出的经所述荧光胶层激发的光的一部分由相邻的所述凸出部之间向所述基板的与所述第一表面相对的第二表面的方向射出。
  2. 根据权利要求1所述的LED灯丝，其特征在于，所述多个凸出部分别设于所述基板的两个相背侧边。
  3. 根据权利要求2所述的LED灯丝，其特征在于，位于所述基板同一侧边的所述多个凸出部等间距排列。
  4. 根据权利要求1所述的LED灯丝，其特征在于，多个所述凸出部在所述基板的侧边形成波浪状或锯齿状结构。
  5. 根据权利要求1所述的LED灯丝，其特征在于，所述荧光胶层在所述基板的第一表面的正投影覆盖所述基板的第一表面。
  6. 根据权利要求5所述的LED灯丝，其特征在于，所述正投影的面积大于所述基板的第一表面的面积。
  7. 根据权利要求1所述的LED灯丝，其特征在于，所述荧光胶层与所述基板延伸方向垂直的截面形状为半圆形、半椭圆形或矩形。
  8. 根据权利要求1所述的LED灯丝，其特征在于，所述荧光胶层的宽度大于或等于所述基板的最宽宽度。
  9. 根据权利要求1所述的LED灯丝，其特征在于，所述LED灯丝还包括引脚以及连接所述引脚和所述基板的绝缘连接件。
  10. 根据权利要求2所述的LED灯丝，其特征在于，所述基板的最小宽度为最大宽度的60%~80%。
PCT/CN2014/081844 2014-05-29 2014-07-08 Led灯丝 WO2015180238A1 (zh)

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