WO2015180149A1 - Modulateur électro-optique - Google Patents

Modulateur électro-optique Download PDF

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Publication number
WO2015180149A1
WO2015180149A1 PCT/CN2014/078965 CN2014078965W WO2015180149A1 WO 2015180149 A1 WO2015180149 A1 WO 2015180149A1 CN 2014078965 W CN2014078965 W CN 2014078965W WO 2015180149 A1 WO2015180149 A1 WO 2015180149A1
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WIPO (PCT)
Prior art keywords
type
doped region
electro
optic modulator
heavily doped
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PCT/CN2014/078965
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English (en)
Chinese (zh)
Inventor
冀瑞强
曾理
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华为技术有限公司
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Priority to PCT/CN2014/078965 priority Critical patent/WO2015180149A1/fr
Priority to CN201480075916.1A priority patent/CN106461985B/zh
Publication of WO2015180149A1 publication Critical patent/WO2015180149A1/fr

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure

Definitions

  • the present invention relates to the field of optoelectronic communications, and in particular to an electro-optic modulator. Background technique
  • Silicon photonic devices are moving in the direction of small size, high speed and high stability.
  • Silicon-based electro-optic modulators have evolved as a common device for silicon photonic devices.
  • the silicon-based electro-optic modulator utilizes the carrier dispersion effect in the silicon material, i.e., changes the concentration of carriers in the silicon material to change the refractive index of the silicon material, thereby modulating the light passing through the silicon material. Changing the concentration of carriers in a silicon material depends on a certain electrical structure.
  • the three structures commonly used in silicon-based electro-optic modulators are PIN structure (pin Junction), PN structure (PN Junction), and MOS structure (Metal Oxide Semiconductor).
  • the modulation efficiency of the PIN structure and the electro-optic modulator of the PN structure is low, and the silicon-based electro-optic modulator of the MOS structure has high modulation efficiency and thus is widely cited, but its bandwidth is small, thereby affecting the silicon base via the MOS structure.
  • the information transmission speed of the electro-optic modulator is provided.
  • a technical problem to be solved by embodiments of the present invention is to provide an electro-optic modulator capable of effectively increasing its bandwidth.
  • An electro-optic modulator for modulating an electrical signal into an optical carrier, the electro-optic modulator comprising an input waveguide, a beam splitter, two symmetric modulation arms, a combiner, and an output waveguide;
  • the modulation arm includes a modulation region waveguide, a traveling wave electrode, and a grating structure
  • the modulation region waveguide is a metal-oxide-semiconductor MOS structure
  • the grating structure is disposed on both sides of the modulation region waveguide;
  • An effective refractive index of the electrical signal on the traveling wave electrode is matched with a group refractive index of the optical carrier in a modulation region waveguide on which both sides of the grating structure are disposed.
  • the structural parameter of the grating structure and the structural parameter of the MOS structure are configured such that an effective refractive index of the electrical signal on the traveling wave electrode, and the optical carrier
  • the group refractive indices in the modulator waveguides configured with grating structures on both sides are matched.
  • the electro-optic modulator further includes:
  • a first insulating layer disposed on the silicon substrate
  • the input waveguide, the beam splitter, the modulation arm, the combiner, and the output waveguide are disposed on the first insulating layer.
  • the electro-optic modulator further includes:
  • the grating structure comprising a first grating structure and a second grating structure, the first grating structure And forming a void region between the second grating structure, the void region extending along the second direction, wherein the first grating structure and the second grating structure are symmetric about the void region;
  • a second insulating layer disposed on the first grating structure and the second grating structure, and forming two of the modulation arms in a third direction;
  • a second type of lightly doped region disposed on the second insulating layer, wherein the second type of lightly doped region and the first type of lightly doped region are loaded with an electrical signal, wherein the first type of lightly doped A portion in which the impurity region, the second insulating layer, and the second type of lightly doped region are sequentially overlapped forms the metal-oxide-semiconductor MOS structure.
  • the second insulation when the width to thickness ratio of the layer is configured to increase, the effective refractive index of the electrical signal on the traveling wave electrode increases, and the bandwidth of the electro-optic modulator increases.
  • the electro-optic modulator further includes:
  • a first type of heavily doped region having three numbers, disposed on the first insulating layer along the second direction, a first type heavily doped region disposed in the void region and the first Grating structure And the second grating structure is connected, and the other two first type of heavily doped regions are respectively disposed at the other ends of the two grating structures and respectively opposite to the other ends of the two grating structures, the first type is heavily doped a doping concentration of the region is greater than a doping concentration of the first type of lightly doped region;
  • a second type of heavily doped region disposed on the second type of lightly doped region along the third direction, and a concentration of the second type of heavily doped region is greater than a concentration of the second type of lightly doped region Doping concentration
  • the first type of heavily doped region and the second type of heavily doped region are respectively loaded with electrical signals such that the first type of lightly doped regions and the second type of lightly doped regions are loaded with modulated electrical signals.
  • the electro-optic modulator further includes:
  • a third insulating layer disposed on the first grating structure, the second grating structure, the first type heavily doped region, and the second type heavily doped region, wherein the third insulating layer corresponds to the first a first type of doped region and a second type of heavily doped region are respectively provided with a first via hole and a second via hole, and the first via hole and the second via hole are filled with a conductive substance, a via and the second via loading an electrical signal to respectively apply an electrical signal to the first type of heavily doped region and the second type of heavily doped region, the traveling wave electrode being disposed on the third insulating layer The traveling wave electrode is electrically connected to the first via and the second via filled with the conductive material, and the traveling wave electrode is used for transmitting an electrical signal.
  • the electro-optic modulator further includes:
  • An ohmic contact layer disposed between the first via filled with the conductive material and the first type of heavily doped region, and the second via filled with the conductive material and the second Type between heavily doped regions.
  • the second type of heavily doped region includes a first portion and a second portion, the first portion completely covering the second type of lightly doped a second region extending outward from one end of the first portion and not covering the second type of lightly doped region, the second via being disposed corresponding to the second portion.
  • the first direction is perpendicular to the second direction, and the second direction is parallel to the third direction.
  • the first type is an N type
  • the second type is a P Type
  • the first type is P type
  • the second type is N type
  • the electro-optic modulator further includes:
  • a doping concentration of the first type of heavily doped regions is greater than a doping concentration of the first type of lightly doped regions; and a second type of heavily doped regions having a number of two, disposed along the third direction and Located in the same layer as the second type of lightly doped region, the concentration of the second type of heavily doped region is greater than the doping concentration of the second type of lightly doped region;
  • the first type of heavily doped region and the second type of heavily doped region are respectively loaded with electrical signals such that the first type of lightly doped regions and the second type of lightly doped regions are loaded with modulated electrical signals.
  • the electro-optic modulator further includes:
  • a third insulating layer disposed on the first grating structure, the second grating structure, the first type heavily doped region, the second type lightly doped region, and the second type heavily doped region
  • the first insulating layer and the second type of heavily doped region are respectively provided with a first via and a second via, and the first via and the first via
  • the second via hole is filled with a conductive material, and the first via hole and the second via hole are respectively loaded with electrical signals to the first type heavily doped region and the second type heavily doped region, respectively.
  • the wave electrode is disposed on the third insulating layer, and the traveling wave electrode is electrically connected to the first via hole and the second via hole filled with the conductive material to transmit an electrical signal.
  • the electro-optic modulator further includes:
  • An ohmic contact layer disposed between the first via filled with the conductive material and the first type of heavily doped region, and the second via filled with the conductive material and the second Type between heavily doped regions.
  • an effective refractive index of the electrical signal on the traveling wave electrode is equal to a refractive index of the group in the modulation region waveguide in which the optical carrier is disposed on both sides of the grating structure So that the effective refractive index of the electrical signal on the traveling wave electrode is equal to the refractive index of the group in the adjustment region waveguide in which the grating structure is disposed on both sides.
  • the electro-optic modulator passes the electrical signal
  • the effective refractive index on the traveling wave electrode is matched with the group refractive index of the optical carrier in the modulation region waveguide on which the grating structure is disposed on both sides, thereby improving the modulation bandwidth of the electro-optic modulator.
  • the arrangement of the grating structure brings about a slow light effect, which improves the modulation efficiency of the optical carrier. Therefore, the present invention adjusts the effective refractive index of the electrical signal on the traveling wave electrode, the group index matching in the modulator waveguide in which the optical carrier is disposed on both sides of the grating structure, and the grating structure.
  • the structure in which the first type lightly doped region, the second insulating layer, and the second type heavily doped region are sequentially overlapped is a MOS capacitor structure.
  • the MOS capacitor structure is disposed on the silicon substrate through the first insulating layer, and the structure is referred to as SOI.
  • SOI the structure is referred to as SOI.
  • Such a structure can reduce the parasitic capacitance between the MOS capacitor structure and the silicon substrate and increase the response speed of the MOS capacitor structure.
  • FIG. 1 is a top plan view of an electro-optic modulator of a first preferred embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of the electro-optic modulator of the first preferred embodiment of the present invention taken along line A-A';
  • FIG. 3 is a schematic cross-sectional view of the electro-optic modulator of the first preferred embodiment of the present invention taken along line BB′;
  • FIG. 4 is a top plan view of an electro-optic modulator according to a second preferred embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional view of the electro-optic modulator of the second preferred embodiment of the present invention taken along line C-C';
  • FIG. 6 is a cross-sectional structural view of the electro-optic modulator of the second preferred embodiment of the present invention taken along line DD′.
  • FIG. 1 is a top view of an electro-optic modulator according to a first preferred embodiment of the present invention
  • FIG. 2 is a schematic view of an electro-optic modulator according to a first preferred embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional view of the electro-optic modulator of the first preferred embodiment of the present invention taken along line BB′.
  • the electro-optic modulator 100 is configured to modulate an electrical signal into an optical carrier.
  • the electro-optic modulator 100 includes an input waveguide gl, a beam splitter g2, two modulation arms e, f, a combiner h2, and an output waveguide hl.
  • the modulation arm includes a modulation region waveguide, a traveling wave electrode 190, and a grating structure.
  • the modulation region waveguide is a metal-oxide-semiconductor MOS (Metal-Oxide-Semiconductor) structure
  • the grating is disposed on both sides of the modulation region waveguide
  • the electrical signal is effective on the traveling wave electrode 190
  • the refractive index matches the refractive index of the group in the modulation region waveguide in which the optical carrier is disposed on both sides.
  • the effective refractive index of the electrical signal on the traveling wave electrode 190 is matched with the group refractive index of the optical carrier in the modulation region waveguide on which the grating structure is disposed on both sides to make the electro-optic Modulator 100 has a large bandwidth.
  • the effective refractive index of the electrical signal on the traveling wave electrode 190 is equal to the group refractive index matching in the modulator waveguide in which the optical carrier is disposed on both sides of the grating structure.
  • the effective refractive index of the electrical signal on the traveling wave electrode is equal to the refractive index of the group in the modulation region waveguide in which the grating structure is disposed on both sides of the optical carrier.
  • the structural parameters of the grating structure and the structural parameters of the MOS structure are configured such that an effective refractive index of the electrical signal on the traveling wave electrode 190 and a grating structure are disposed on both sides of the optical carrier
  • the group refractive indices in the modulator waveguide match.
  • the structural parameters of the grating include the period of the grating structure and the duty cycle.
  • the electro-optic modulator 100 includes: a silicon substrate 110 and a first insulating layer 120.
  • the material of the silicon substrate 110 is silicon, and the first insulating layer 120 is disposed on the silicon substrate 110.
  • the input waveguide g, the beam splitter, the modulation arm, the combiner, and the output waveguide are disposed on the first insulating layer 120.
  • the input waveguide g, the beam splitter, the modulation arm, the combiner and the output waveguide are disposed on the first insulating layer 120.
  • This structure is called silicon on insulator (silicon on Insulation, SOI ).
  • SOI silicon on Insulation
  • the electro-optic modulator 100 further includes a first type of lightly doped region 130, a second insulating layer 140, and a second type of lightly doped region 150.
  • the first type of lightly doped region 130 is disposed on the first insulating layer 120 and forms the grating structure in a first direction dl.
  • the grating structure includes a first grating structure a and a second grating structure 13.
  • a gap region c is formed between the first grating structure a and the second grating structure b, and the gap region c extends along the second direction d2, the first grating structure a and the second grating structure b is symmetric about the void region c.
  • the second insulating layer 140 is disposed on the first grating structure a and the second grating structure b, and forms two of the modulation arms of the electro-optic modulator 100 in a third direction d3:
  • the arm e and the second modulation arm f are modulated.
  • a second type of lightly doped region 150 is disposed on the second insulating layer 140, and the second type of lightly doped region 150 and the first type of lightly doped region 130 are loaded with electrical signals.
  • the electrical signal is used to modulate an optical signal passing through the first modulation arm e and the second adjustment arm f.
  • the first direction dl is a direction in which the tooth structures of the first grating structure a and the second grating structure b extend. As shown in FIG. 1 , the first direction and the first grating structure a and Any one of the second grating structures b is parallel. That is, the first direction is the direction along AA, or the direction of BB'. In Fig. 1, the second direction d2 is parallel to the direction of the longer side of the void region c.
  • the third party to d3 is the direction in which the two modulation arms extend.
  • the first direction d1 is perpendicular to the second direction d2, and the second direction d2 is parallel to the third direction d3.
  • MOS capacitor structure a structure formed by sequentially stacking portions of the first type lightly doped region 130, the second insulating layer 140, and the second type heavily doped region 170 is referred to as a MOS capacitor structure.
  • the MOS capacitor structure is disposed on the silicon substrate 110 through the first insulating layer 120.
  • This structure is called Silicon on Insulation (SOI).
  • SOI Silicon on Insulation
  • adjusting the electrical signal by adjusting a width to thickness ratio of the second insulating layer 140
  • the effective refractive index of the traveling wave electrode 190 further adjusts the bandwidth of the electro-optic modulator 100.
  • the width to thickness ratio of the second insulating layer 140 when the width to thickness ratio of the second insulating layer 140 is increased, the effective refractive index of the electro-optic modulator 100 to the modulated electrical signal is increased, and further, The bandwidth of the electro-optic modulator 100 is increased; when the width to thickness ratio of the second insulating layer 140 is reduced, the effective refractive index of the modulated electrical signal is reduced by the electro-optic modulator 100, and further, The bandwidth of the electro-optic modulator 100 is reduced.
  • the electro-optic modulator 100 also includes a first type of heavily doped region 160 and a second type of heavily doped region 170.
  • the number of the first type heavily doped regions 160 is three, and is disposed on the first insulating layer 120 along the second direction d2.
  • a first type of heavily doped region 160 is disposed in the void region c and is connected to the first grating structure a and the second grating structure b.
  • the other two first type of heavily doped regions 160 are respectively disposed at the other ends of the first grating structure a and the second grating structure b, and the other ends of the first grating structure a and the second grating structure b Connected, and in the present embodiment, is in the same plane as the first grating structure a and the second grating structure b.
  • the first type of heavily doped region 160 is doped with impurities of the same nature as the first type of lightly doped region 130, and the doping concentration of the first type of heavily doped type region 160 is greater than the first type The doping concentration of the lightly doped region 130.
  • a second type of heavily doped region 170 is disposed on the second type of lightly doped region 150 along the third direction d3, and the second type of heavily doped region 170 and the second type of lightly doped region 150 is doped with impurities of the same nature and is different from the first type of doping.
  • the doping concentration of the second type heavily doped region 170 is greater than the doping concentration of the second type lightly doped region 150.
  • the first type of heavily doped region 160 and the second type of heavily doped region 170 are respectively loaded with electrical signals to load the first type of lightly doped region 130 and the second type of lightly doped region 150 with electrical signals.
  • the first type doping is N-type doping
  • the second type doping is P-type doping.
  • the first type of doping may be P-type doping
  • the second type of doping is N-type doping.
  • the electro-optic modulator 100 also includes a third insulating layer 180.
  • the third insulating layer 180 is disposed on the first grating structure a, the second grating structure b, the first type heavily doped region 160, and the second type heavily doped region 170.
  • the first insulating layer 180 and the second type of heavily doped region 170 are respectively provided with a first via 181 and a second via 182.
  • the first via 181 and the second via 182 are filled with a conductive material, and the first via 181 and the second via 182 are loaded with an electrical signal to be heavily doped to the first type, respectively.
  • Region 160 and second type heavily doped region 170 are loaded with electrical signals.
  • the first insulation The layer 120, the second insulating layer 140, and the third insulating layer 180 may be silicon dioxide.
  • the electro-optic modulator 100 further includes an ohmic contact layer 183 disposed between the first via 181 filling the conductive material and the first type heavily doped region 160 to The contact resistance between the first via 181 and the first type heavily doped region 160 is reduced.
  • the ohmic contact layer 183 is also disposed between the second via 182 filling the conductive material and the second type heavily doped region 170 to reduce the second via 182 and the second type heavily doped region Contact resistance between 170.
  • the electro-optic modulator 100 further includes two traveling wave electrodes 190.
  • the traveling wave electrodes 190 are disposed on the third insulating layer 180, and the traveling wave electrodes 190 and the first vias 181 and the filling conductive material The two vias 182 are electrically connected, and the traveling wave electrode 190 is used to transmit electrical signals.
  • the traveling wave electrode 190 is a metal electrode.
  • the second type of heavily doped region 170 has a lateral dimension greater than the first type of lightly doped region 150.
  • the second type heavily doped region 170 includes a first portion 171 and a second portion
  • the first portion 171 completely covers the second type of lightly doped region 150.
  • the second portion 172 extends outwardly from the first portion 171 and does not cover the second type of lightly doped region 150, and the second via 181 is disposed corresponding to the second portion 172. With this configuration, the loss of light passing through the second insulating layer 240 is effectively reduced.
  • Adjusting the electrical signals of the first type of lightly doped region 130 and the second type of lightly doped region 150 coupled to the one of the modulation arms can adjust the effective refractive index of the current modulation arm to light.
  • the phase of the light passing through the modulation arm changes accordingly, so that the phase change of the light passing through the two modulation arms can be adjusted. And to achieve the modulation of light.
  • the current modulation arm pair When adjusting the electrical signals loaded in the first type of lightly doped region 130 and the second type of lightly doped region 150 connected to a modulation arm such that the concentration of carriers on the modulation arm is reduced, the current modulation arm pair The effective refractive index of the photoelectric is increased.
  • the effective refractive index of the current modulation arm to light Decrease, the phase of the light output by the modulation arm is reduced. Then, the phase difference of the light outputted from the two modulation arms is changed to realize the modulation of the light.
  • the electro-optic modulator 100 is a typical Mach-Zehnder interferometer (MZI) electro-optic modulator.
  • the electro-optic modulator 100 includes Two "Y"-shaped structures are named as the first " ⁇ "-shaped structure g and the second "Y”-shaped structure h for convenience of description.
  • the first "Y"-shaped structure g and the second "Y”-shaped structure are h-axis symmetric, and the two branch portions of the first "Y"-shaped structure g pass through the two modulation arms e, f and the second "Y", respectively.
  • the two branches of the shaped structure h are connected to form a transmission path of light.
  • the first "Y" type structure g includes an input waveguide gl and a beam splitter g2.
  • the input waveguide gl is configured to receive an input optical carrier
  • the beam splitter g2 is connected to the input waveguide gl and two adjustment arms e, f for dividing the input optical carrier into two optical carriers, and
  • the two optical carriers are output to two modulation arms e, f, respectively.
  • At least one of the two modulation arms e, f is used to modulate the optical carrier.
  • the second "Y" type structure h includes an output waveguide hi and a combiner h2.
  • the combiner h2 connects the two modulation arms e, f and the output waveguide hl for synthesizing two optical carriers modulated by the two modulation arms e, f into one optical carrier.
  • the combiner h2 is configured to output the synthesized optical carrier.
  • ⁇ is the bandwidth of the electro-optic modulator 100
  • c is the speed of vacuum light
  • 1 is the length of the modulation arm of the electro-optic modulator 100, n.
  • the group refractive index in the modulation region waveguide in which the grating structure is disposed on both sides of the optical carrier is the effective refractive index of the electrical signal on the traveling wave 190 of the electro-optic modulator 100. It can be seen from Equation 1 that by adjusting the effective refractive index of the electrical signal on the traveling wave electrode 190, the group refractive index matching in the modulation region waveguide in which the optical carrier is disposed on both sides of the grating structure can be Modulation of the bandwidth of the modulator 100 is achieved.
  • the bandwidth of the electro-optic modulator 100 is related to the difference between no and ie, the bandwidth/and (of the bandwidth of the electro-optic modulator 100) The bandwidth/increase of the electro-optic modulator 100; when decreasing ( ⁇ .-, 1 ⁇ (1 ), the bandwidth/reduction of the electro-optic modulator 100.
  • the present invention enhances the group refractive index matching in the modulator waveguide in which the grating carrier is disposed on both sides of the grating carrier by adjusting the effective refractive index of the electrical signal on the traveling wave electrode 190 The bandwidth of the electro-optic modulator 100.
  • the arrangement of the grating structure brings about a slow light effect, which improves the modulation efficiency of the optical carrier. Therefore, the present invention adjusts the electrical signal at the traveling wave.
  • An effective refractive index on the electrode 190, configured with the optical carrier on both sides The group index matching in the modulator waveguide of the grating structure, as well as the arrangement of the grating structure, enhances the modulation efficiency of the optical carrier while increasing the bandwidth of the electro-optic modulator 100.
  • the group of optical carriers has a refractive index n.
  • the group refractive index n of the optical carrier is related to the wavelength of the optical carrier passing through the electro-optic modulator 100. That is, when the optical carriers of different wavelengths pass through the first grating a and the second grating b, the group refractive index n 0 of the optical carriers in the electro-optic modulator 100 is different.
  • the optical carrier Group refractive index n Is a fixed value.
  • the group refractive index n of the optical carrier Greater than the above, and the group refractive index n of the optical carrier. Greater than a predetermined refractive index.
  • the predetermined refractive index is a group refractive index of a normal optical carrier.
  • the group refractive index n of the optical carrier Is 4. See Equation 2 and Equation 3 for the formula described.
  • L and C are the inductance and capacitance per unit length of the traveling wave electrode 190 under no load, respectively.
  • the load refers to a MOS structure.
  • Cj is the capacitance value of the unit length modulation arm, and its unit is F/m, which is an adjustable value.
  • the W and t are the width and thickness of the second insulating layer 140, respectively.
  • the value of the dielectric constant of the vacuum is a fixed value.
  • the relative dielectric constant of the second insulating layer is a fixed value when the material of the second insulating layer is constant.
  • the thickness W of the second insulating layer 140 is related to the width t.
  • the increase is increased when the ratio of the width W to the thickness t of the second insulating layer 140 is increased; when the ratio of the width W to the thickness t of the second insulating layer 140 is decreased, the decrease is made.
  • the MOS structure cooperates with the first grating structure a and the second grating structure b to adjust the bandwidth / of the electro-optic modulator 100.
  • Equation 4 when the group refractive index n 0 of the optical carrier is
  • the first grating a and the second grating b are fixed in the electro-optic modulator 100, and for the optical carrier of a certain wavelength, when the second insulating layer 140 is increased Bandwidth/increase of the electro-optic modulator 100 when the ratio of the width W to the thickness t; the bandwidth/minus of the electro-optic modulator 100 when the ratio of the width W to the thickness of the second insulating layer 100 is reduced small.
  • the optical carrier has a group refractive index n.
  • the value is a fixed value, that is, the first grating a and the second grating b are fixed in the electro-optic modulator 100, and for the optical carrier of a certain wavelength, the electro-optic modulator 100 can be added.
  • the ratio of the width to the thickness of the second insulating layer 140 in the middle enhances the bandwidth of the electro-optic modulator 100.
  • the process of adjusting the light by the modulation arm of the electro-optic modulator 100 is described below.
  • the first type of lightly doped region connected to the modulation arm When grounding 130.
  • the concentration of the carriers in the second insulating layer 140 is increased.
  • the second insulating layer 140 collects electrons adjacent to the interface of the first type of lightly doped region 120, and the second insulating layer 140 is adjacent to the The interface of the second type of lightly doped region 150 aggregates holes.
  • the effective refractive index of the light passing through the modulation arm decreases, and the phase of the light output by the modulation arm decreases.
  • the modulation of light is achieved by adjusting the wide phase of the two modulation arms.
  • FIG. 4 is a top view of an electro-optic modulator according to a second preferred embodiment of the present invention
  • FIG. 5 is a second embodiment of the present invention
  • FIG. 6 is a schematic cross-sectional view of the electro-optic modulator of the second preferred embodiment of the present invention taken along line DD′.
  • the electro-optic modulator 300 includes a silicon substrate 310, a first insulating layer 320, a first type of lightly doped region 330, a second insulating layer 340, and a second type of lightly doped region 350.
  • the material of the silicon substrate 310 is silicon.
  • the first insulating layer 320 is disposed on the silicon substrate 310.
  • the first type of lightly doped region 330 is disposed on the first insulating layer 320 and forms a first grating structure a and a second grating structure b along the first direction d1.
  • a gap region c' is formed between the first grating structure a' and the second grating structure b', and the gap region c' extends along the second direction d2, the first grating structure a, and
  • the second grating structure b is symmetrical about the void region c.
  • the second insulating layer 340 is disposed on the first grating structure a, and the second The grating structure b, up, and in the third direction d3, form two modulation arms of the electro-optic modulator 300: a first modulation arm e, and a second modulation arm f.
  • a second type of lightly doped region 350 is disposed on the second insulating layer 340, and the second type of lightly doped region 350 and the first type of lightly doped region 330 are loaded with electrical signals.
  • the bandwidth of the electro-optic modulator 300 is adjusted by adjusting the width to thickness ratio on the second insulating layer.
  • the first direction d1, the second direction d2, and the second direction d2 are parallel to the third direction d3.
  • the structure formed by the first type lightly doped region 330, the second insulating layer 340, and the second type heavily doped region 370 may be referred to as a MOS capacitor structure.
  • the MOS capacitor structure is disposed on the silicon substrate 310 through the first insulating layer 320. This structure is referred to as SOI. Such a structure can reduce the parasitic capacitance between the MOS capacitor structure and the silicon substrate 310 and increase the response speed of the MOS capacitor structure.
  • the electro-optic modulator 300 also includes a first type of heavily doped region 360 and a second type of heavily doped region 370.
  • the number of the first type of heavily doped regions 360 is one, and along the third direction d3, is disposed in the void region c of the first insulating layer 320, and the first grating structure a, and The two grating structures b' are connected, and the doping concentration of the first type heavily doped region 360 is greater than the doping concentration of the first type lightly doped region 330.
  • the number of the second type of heavily doped regions 370 is two, disposed along the third direction d3, and located in the same layer as the second type of lightly doped regions 350.
  • the doping concentration of the second type heavily doped region 360 is greater than the doping concentration of the first type of lightly doped region 330.
  • the first type of heavily doped region 330 and the second type of heavily doped region 360 respectively load electrical signals to load the first type of lightly doped region 330 and the second type of lightly doped region 370 signal.
  • the electro-optic modulator 300 also includes a third insulating layer 380.
  • the third insulating layer 380 is disposed on the first grating structure a', the second grating structure b', the first type heavily doped region 360, the second type lightly doped region 350, and The second type of heavily doped region 370 is described.
  • the first insulating layer 380 is respectively provided with a first via 381 and a second via 382 corresponding to the first type heavily doped region 360 and the second type heavily doped region 370.
  • the first via 381 and the second via 382 are filled with a conductive material, and the first via 381 and the second via 382 are respectively respectively directed to the first type heavily doped region 360 and
  • the second type heavily doped region 370 is loaded with an electrical signal, and the electrical signals loaded in the first type heavily doped region 360 and the second type heavily doped region 370 are respectively loaded in the The first type of lightly doped region 330 and the second type of lightly doped region 350 are described.
  • the electro-optic modulator 300 also includes an ohmic contact layer 383.
  • the ohmic contact layer 383 is disposed between the first via 381 filling the conductive material and the first type heavily doped region 360 to reduce the first via 381 filling the conductive material and the Contact resistance between the first type of heavily doped regions 360.
  • the ohmic layer 383 is also disposed between the second via 382 filling the conductive material and the second type heavily doped region 370 to reduce the second via 382 filled with the conductive material and the Contact resistance between the second type of heavily doped regions 370.
  • the electro-optic modulator 300 further includes a traveling wave electrode 390 disposed on the third insulating layer 380, the traveling wave electrode 390 and the first via 381 filled with the conductive material and filling The second vias 382 of the conductive material are electrically connected.
  • the traveling wave electrode 390 is configured to transmit an electrical signal, and the electrical signal is respectively transmitted to the first type of re-doping through the first via 381 filling the conductive material and the second via 382 filling the conductive material.
  • the electro-optical modulator 300 provided in the second embodiment of the present invention has the same modulation principle as the electro-optic modulator 100 provided in the first embodiment of the present invention, and details are not described herein again.
  • the electro-optic modulator of the present invention passes the effective refractive index of the electrical signal on the traveling wave electrode, and the group in the modulation region waveguide of the grating structure configured on both sides of the optical carrier
  • the refractive indices are matched to increase the modulation bandwidth of the electro-optic modulator.
  • the arrangement of the grating structure brings about a slow light effect, which improves the modulation efficiency of the optical carrier. Therefore, the present invention adjusts the group refractive index in the modulator waveguide in which the grating structure is disposed on both sides by adjusting the effective refractive index of the electric signal on the traveling wave electrode, and the grating structure.
  • the setting improves the modulation efficiency of the optical carrier while increasing the bandwidth of the electro-optic modulator.
  • the first type of lightly doped regions 130, 330, the second insulating layer 140, 340, and the second type of heavily doped regions 170, 370 are sequentially overlapped to form a MOS capacitor structure.
  • the MOS capacitor structure is disposed on the silicon substrates 110, 310 through the first insulating layers 120, 320. This structure is referred to as SOI.
  • SOI SOI

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

L'invention concerne un modulateur électro-optique (100) utilisé pour moduler un signal électrique dans une porteuse optique. Le modulateur électro-optique (100) comprend un guide d'onde d'entrée (g1), un diviseur de faisceau (g2), deux bras de modulation symétriques (e, f), un mélangeur de faisceaux (h2) et un guide d'ondes de sortie (h1). Le bras de modulation (e, f) comprennent chacun un guide d'onde à zone de modulation, une électrode à onde progressive (190) et une structure de réseau (a, b). Le guide d'onde à zone de modulation présente une structure en métal-oxyde-semiconducteur (MOS). Les structures de réseau (a, b) sont disposées sur deux côtés du guide d'onde à zone de modulation. Un indice de réfraction effectif du signal électrique sur l'électrode à onde progressive (190) correspond à un indice de réfraction de groupe du support optique sur le guide d'onde à zone de modulation réalisé avec les structures de réseau sur deux côtés, ce qui permet d'accroître la largeur de bande du modulateur électro-optique.
PCT/CN2014/078965 2014-05-30 2014-05-30 Modulateur électro-optique WO2015180149A1 (fr)

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PCT/CN2014/078965 WO2015180149A1 (fr) 2014-05-30 2014-05-30 Modulateur électro-optique
CN201480075916.1A CN106461985B (zh) 2014-05-30 2014-05-30 电光调制器

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CN111290145B (zh) * 2020-03-03 2023-07-18 联合微电子中心有限责任公司 一种基于环形反射镜的高速调制器
CN112526773B (zh) * 2020-12-09 2023-01-17 武汉光谷信息光电子创新中心有限公司 一种电光调制器
CN118235083A (zh) * 2021-11-11 2024-06-21 先进微晶圆私人有限公司 具有行波电极的III-V/Si混合MOS光调制器

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