WO2015179733A1 - Air cavity package - Google Patents
Air cavity package Download PDFInfo
- Publication number
- WO2015179733A1 WO2015179733A1 PCT/US2015/032124 US2015032124W WO2015179733A1 WO 2015179733 A1 WO2015179733 A1 WO 2015179733A1 US 2015032124 W US2015032124 W US 2015032124W WO 2015179733 A1 WO2015179733 A1 WO 2015179733A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- air cavity
- cavity package
- dielectric frame
- flange
- polyimide
- Prior art date
Links
- 239000000853 adhesive Substances 0.000 claims abstract description 52
- 230000001070 adhesive effect Effects 0.000 claims abstract description 52
- 229920001721 polyimide Polymers 0.000 claims abstract description 40
- 239000004642 Polyimide Substances 0.000 claims abstract description 39
- 229920000106 Liquid crystal polymer Polymers 0.000 claims abstract description 28
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims abstract description 28
- 239000010949 copper Substances 0.000 claims description 52
- 229910052802 copper Inorganic materials 0.000 claims description 31
- 229920006259 thermoplastic polyimide Polymers 0.000 claims description 29
- 239000000203 mixture Substances 0.000 claims description 27
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000010432 diamond Substances 0.000 claims description 9
- 229910003460 diamond Inorganic materials 0.000 claims description 9
- 229910016525 CuMo Inorganic materials 0.000 claims description 8
- 239000000945 filler Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 238000005304 joining Methods 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 229910000962 AlSiC Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- -1 CuW Inorganic materials 0.000 claims description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000003365 glass fiber Substances 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 13
- 239000004593 Epoxy Substances 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- 239000002585 base Substances 0.000 description 7
- 238000001723 curing Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000001351 cycling effect Effects 0.000 description 4
- 238000003475 lamination Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 101150107890 msl-3 gene Proteins 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229920013683 Celanese Polymers 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229920003997 Torlon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011156 metal matrix composite Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
- H01L21/4807—Ceramic parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/047—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads being parallel to the base
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3732—Diamonds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present disclosure relates to air cavity packages and methods for making the same.
- An air cavity package typically includes one or more semiconductor dice attached to a base / flange and surrounded by a frame with electrical leads embedded in the frame. The dice are electrically joined to the leads, and the package is then sealed with a lid. The air serves as an electrical insulator due to its low dielectric constant.
- Air cavity packages are extensively used for housing high frequency devices (e.g., radio-frequency dice). Surrounding a high frequency semiconductor chip with air improves the high frequency properties of the die and corresponding electrical leads compared to encapsulation in a material having a higher dielectric constant (e.g., a molding compound such as epoxy).
- RF device manufacturers desire to minimize material and production costs associated with air cavity packages.
- Manufacturers have developed metallization systems that enable silicon (Si) and gallium nitride / silicon carbide (GaN/SiC) chips to be soldered onto copper flanges using a thin gold-tin (AuSn) solder.
- AuSn gold-tin
- the dielectric frame is typically made of alumina, but bonding alumina to copper is problematic due to the severe mismatch between the coefficients of thermal expansion (CTEs) of these materials.
- the linear CTE of copper is about 17ppm/°C at 20°C whereas the linear CTE of alumina is about 8 ppm/°C at 20°C.
- An alumina frame glued to a copper flange can only withstand thermal excursions that remain below about 190°C.
- Some manufacturers have offered a dielectric frame made of liquid crystal polymer (LCP) which is overmolded onto copper leads to create a frame. LCP has a close CTE match to copper. The frame/lead subassembly can then be bonded onto a copper flange (after chips have been AuSn soldered onto the flange) using epoxy.
- LCP is difficult to bond with epoxy due to its extreme chemical inertness.
- a common failure mechanism of LCP parts is leakage at the interface between the LCP and a metal (e.g., as observed during gross leak testing in a Fluorinert® bath).
- the flange must be sandblasted in order to achieve adequate adhesion between the flange and the LCP frame. Additionally, steps such as bonding the LCP frame to the flange between die attachment and wire bonding are necessary.
- the present disclosure relates to air cavity packages including a dielectric frame made of a polyimide or a liquid crystal polymer (LCP).
- LCP liquid crystal polymer
- an air cavity package adapted to contain a die, comprising: a flange having an upper surface; and a dielectric frame having an upper surface and a lower surface, the lower surface being attached to the upper surface of the flange; wherein the dielectric frame is made of a polyimide or a liquid crystal polymer.
- the air cavity package may further comprise a first conductive lead and a second conductive lead, attached to opposite sides of the upper surface of the dielectric frame.
- the first conductive lead and the second conductive lead can be attached to the upper surface of the dielectric frame by a thermoplastic polyimide.
- the first conductive lead and the second conductive lead can be made of copper, nickel, a copper alloy, a nickel-cobalt ferrous alloy, or an iron-nickel alloy.
- the copper alloy may be selected from the group consisting of CuW, CuMo, CuMoCu, and CPC.
- the flange can be made of copper, a copper alloy, aluminum, an aluminum alloy, AlSiC, AISi, Al/diamond, Al/graphite, Cu/diamond, Cu/graphite, Ag/diamond, CuW, CuMo, Cu:Mo:Cu, Cu:CuMo:Cu (CPC), Mo, W, metallized BeO, or metallized AIN.
- the flange is a substrate plated with one or more metal sublayers.
- the one or more metal sublayers can be made of nickel (Ni), gold (Au), palladium (Pd), chromium (Cr), or silver (Ag).
- the dielectric frame may be attached to the surface via a thermoplastic polyimide.
- the dielectric frame further comprises a filler.
- the filler can be selected from the group consisting of ceramic powder, glass powder, and chopped glass fibers.
- the dielectric frame may have a dielectric constant of about 3.0 to about 5.0.
- Also disclosed are methods for forming an air cavity package comprising: joining a lower surface of a dielectric frame to an upper surface of a flange using a first adhesive composition; joining a first conductive lead and a second lead to an upper surface of the dielectric frame using a second adhesive composition; and curing the first adhesive composition and the second adhesive composition, either separately or simultaneously; wherein the dielectric frame comprises a polyimide or a liquid crystal polymer.
- the first adhesive composition and the second adhesive composition may be a thermoplastic polyimide. Sometimes, the first adhesive composition and the second adhesive composition are cured simultaneously.
- the curing can be performed at a temperature of about 220°C and a pressure of about 10 psi.
- the flange may be formed of a copper substrate plated with gold.
- the methods can further comprise attaching a die to the upper surface of the flange, wherein the dielectric frame surrounds the die.
- Also disclosed are methods for forming an air cavity package comprising: receiving a polyimide sheet laminated on a lower surface and an upper surface with a conductive material; and shaping the upper surface of the polyimide sheet to form electrical leads on opposite sides of a cavity in the polyimide sheet, the conductive material on the lower surface of the polyimide sheet being visible in the cavity.
- the conductive material can be copper.
- FIG. 1 is an exploded view of an exemplary air cavity package according to the present disclosure.
- FIG. 2 is a side view of the air cavity package of FIG. 1.
- FIG. 3 is a top view of the air cavity package of FIG. 1.
- compositions or processes as “consisting of and “consisting essentially of the enumerated components/steps, which allows the presence of only the named components/steps, along with any impurities that might result therefrom, and excludes other components/steps.
- the terms “upper” and “lower” are relative to each other in location, i.e. an upper component is located at a higher elevation than a lower component in a given orientation, but these terms can change if the component is flipped.
- these terms refer to the components being in a fixed orientation relative to each other. For example, a lower surface of a first component will always rest upon an upper surface of a second component that is located below the first component; the first component cannot be flipped by itself so that its upper surface then rests upon the upper surface of the second component.
- CTE coefficient of thermal expansion
- FIG. 1 illustrates an exploded view of an embodiment of an air cavity package 100 according to the present disclosure.
- FIG. 2 is a side view of the air cavity package.
- FIG. 3 is a top view of the air cavity package.
- the air cavity package 100 includes a flange 110, a semiconductor die 120, a first conductive lead 150, a second conductive lead 160, and a dielectric frame 130.
- the flange is also referred to as the base of the air cavity package.
- An upper surface 134 of the dielectric frame 130 is attached to the lower surface 152, 162 of each conductive lead 150, 160 by a first adhesive composition 140.
- the conductive leads 150, 160 are located on opposite sides of the package 100, or opposite sides of the dielectric frame 130 or the flange 110.
- a lower surface 132 of the dielectric frame 130 is attached to an upper surface 114 of the flange 110 by a second adhesive composition 142.
- the dielectric frame 130 surrounds and encloses the die 120, which is also attached to the upper surface 114 of the flange.
- the dielectric frame has an annular shape, i.e. a shape defined by the area between two concentric shapes.
- the flange 110 acts as a heat sink for the semiconductor die, and is made of a material with medium to high thermal conductivity.
- the flange can be made of copper, aluminum, AlSiC, AISi, Al/diamond, Al/graphite, Cu/diamond, Cu/graphite, Ag/diamond, CuW, CuMo, Cu:Mo:Cu, Cu:CuMo:Cu (CPC), Mo, W, metallized BeO, or metallized AIN. It is noted that CPC refers to Cu:CuMo70:Cu, which usually has thicknesses of 1 :4:1 for the three sublayers.
- the flange can be a metal matrix composite, such as graphite dispersed within an aluminum or copper metal matrix.
- the flange is in the form of a substrate that is plated with one or more metal sublayers on each major surface (e.g., a plating material compatible with AuSn die attachment).
- the flange can be plated with combinations of nickel (Ni), gold (Au), palladium (Pd), chromium (Cr), and silver (Ag), as desired.
- the flange is plated with Ni + Au, Ni + Pd + Au, Ni + Cr, Pd + Au, or Ni + Ag, with the first listed element being plated first (i.e. closest to the substrate).
- the adhesive compositions 140, 142 generally include a strong, ductile high temperature adhesive (e.g., a thermoplastic polyimide, or other polyimide-based adhesive).
- a strong, ductile high temperature adhesive e.g., a thermoplastic polyimide, or other polyimide-based adhesive.
- Thermoplastic polyimide exhibits strong adhesive strength between the flange 110 and the dielectric frame 130.
- the first adhesive composition 140 and the second adhesive composition 142 may be the same or different.
- the adhesive compositions 140, 142 may consist of the main adhesive material or may include one or more other components.
- the adhesive composition is filled with a dielectric material (e.g., glass and/or ceramic powder).
- Other adhesives may be applied in a layer above and/or below the main adhesive.
- the main adhesive is a thermoplastic polyimide and the other adhesive is a high temperature epoxy or a high temperature polyimide-based adhesive.
- the thermoplastic polyimide can be in the form of an A-stage adhesive, in which the polyimide is still liquid and a relatively significant amount of solvent is still present.
- This A-stage thermoplastic polyimide can dispensed, dipped, pad printed, or screen printed onto a surface and subsequently B-staged.
- the adhesive is a B-staged film, in which the majority of solvent has been previously removed and the adhesive is uncured, but can be handled and shaped relatively easily.
- the free standing B-staged thermoplastic polyimide film can be stamped into a preform; or a B- staged thermoplastic polyimide can be coated on both faces of a thin polyimide (e.g., Kapton®) film.
- a thin polyimide e.g., Kapton®
- Thermoplastic polyimide provides a fast-acting bond and is suitable for high temperature operations. It is noted that polyimides intrinsically are thermal insulators and do not conduct heat very well. Polyimides are also intrinsically electrically isolating, i.e. they do not conduct electricity.
- Non-limiting examples of polyimide adhesives include adhesives sold by Polytec PT GmbH of Waldbronn, Germany and Fraivillig Technologies of Boston, Massachusetts. Exemplary Polytec adhesives include adhesives sold under the trade names EC-P 280, EP P-690, EP P-695, and TC-P-490.
- thermoplastic polyimide as an adhesive to assemble the air cavity package provides flexibility with respect to the lead and flange materials.
- this adhesive will bond well to most ceramic, metal, or glass surfaces without requiring pre-metallization of that surface.
- the adhesive strength is very high regardless of whether the surface being bonded is a metal, ceramic, or plastic.
- Cured TPI is also very compliant, i.e. has a low Young's modulus or is not very stiff.
- the combination of high adhesive strength with low stiffness means that cured TPI bond films can withstand severe shear stress without fracture or loss of adhesion.
- the cured TPI bond film can also withstand severe CTE mismatch between two surfaces being bonded together without losing adhesion to either surface.
- this adhesive will cure at temperatures below 300°C. This reduces residual stress (CTE mismatch) between the parts being bonded together. This low temperature cure also reduces processing costs since lower-cost ovens or hot plates can be used instead of expensive high temperature furnaces.
- thermoplastic polyimide can withstand extended operation at 350 °C and thermal excursions to 450 °C.
- epoxy adhesives typically cure at a low temperature of around 170°C, and will debond, char, or delaminate at higher temperatures.
- air cavity packages made using TPI are compatible with subsequent die attach operations using conventional die bonding materials such as silver-filled epoxy, AuSn solder (280°C), and SnAgCu solder (217°C).
- the electrical leads 150, 160 may be made of copper, nickel, a copper alloy, a nickel-cobalt ferrous alloy (e.g., Kovar®), or an iron-nickel alloy (e.g., Alloy 42, i.e. Fe58Ni42).
- the electrical leads can be plated with one or more metal sublayers, which are the same as described above.
- thermoplastic polyimide will dissolve in high pH solutions (e.g., solutions typically used in the cleaning step of electroplating processes), it is preferable for the lead and flange materials to be plated prior to assembly of the air cavity package (if they are plated).
- the dielectric frame 130 is formed from a polyimide or a liquid crystal polymer (LCP).
- the dielectric frame 130 may have a thickness (i.e. height) of from about 0.2 mm to about 0.8 mm, including about 0.5 mm.
- the dielectric frame 130 can be formed from a polyimide sheet obtained commercially under the tradenames Vespel®, Torlon®, or Cirlex®.
- the sheet can be machined in a variety of low cost methods such as stamping, laser cutting, water jet cutting, milling, and machining, to obtain the desired shape.
- a frame 130 made of polyimide may cost less than a conventional metallized and plated alumina frame.
- the dielectric frame 130 may also be formed via injection molding.
- Polyimide resins that can be injection molded include DuPont Aurum® and Vespel® resins.
- Extern® UH resins commercially available from Sabic Innovative Plastics of Pittsfield, Massachusetts have an unusually high service temperature of about 240°C.
- the polyimide can be filled with an insulative, non-conducting filler to modify the properties of the dielectric frame.
- the filler is a ceramic powder, glass powder or milled glass fibers. These fillers can reduce the CTE of the dielectric frame.
- the filler may be present in an amount of from greater than zero to about 50 volume percent of the dielectric frame.
- LCP can also injection molded into a net shape frame to form the dielectric frame.
- LCP compositions that can be injection molded include the Vectra family of LCP (Celanese Corporation) as well as Laperos (Polyplastics).
- the dielectric frame may have a dielectric constant in the range of from about 3.0 to about 5.0, including from about 3.2 to about 3.8 and from about 3.4 to about 3.6.
- Polyimide and LCP are suitable materials for the dielectric frame due to their dielectric properties.
- Table 1 lists the properties of Cirlex® and Extern® polyimides and LCP compared to conventional frame materials (i.e., alumina). Table 1 .
- Advantages of polyimide over LCP include higher operating temperature, compatibility with thermoplastic polyimide adhesive (which is also suitable for high temperature operation), and ability to easily bond to adhesives such as thermoplastic polyimide.
- LCP and polyimides exhibit similar dielectric constants
- components matched to LCP dielectric frames also generally work well with polyimide frames.
- a radio frequency power transistor designed to have RF impedance match with a LCP frame will also generally have RF impedance match with a polyimide frame.
- a lid (not shown) may be added to seal the air in the air cavity of the package.
- the lid comprises alumina ceramic or LCP.
- An epoxy may be used to bond the lid to the top surface of the frame, including the polyimide frame and the leads (e.g., gold-plated leads).
- the lid epoxy may be cured at a temperature of about 160°C.
- the leads 150, 160 and flange 110 are both made of copper and the adhesive compositions 140, 142 include a thermoplastic polyimide, then the materials of these components and the dielectric frame 130 share a very similar CTE.
- the leads 150, 160, dielectric frame 130, and flange 110 can be aligned in a fixture and bonded together by curing the adhesive composition.
- Typical curing temperature for thermoplastic polyimide is about 220°C at 10 psi. Once cured, the thermoplastic polyimide can withstand an excursion of 320°C for 5 minutes (e.g., to enable AuSn die attachment) followed by thermal excursions necessary for lidding and temperature cycle testing.
- the air cavity package can be formed from a polyimide sheet that is completely laminated on both surfaces with copper.
- Exemplary thicknesses include 8 mil Cu / 20 mil Cirlex® / 8 mil Cu; and 4 mil Cu / 20 mil Cirlex® / 8 mil Cu.
- This laminated sheet can then be machined into individual air cavity packages.
- the laminated sheet can be milled into one copper surface to create the electrical leads and the polyimide frame (i.e. by forming a cavity in the polyimide layer of the sheet such that the opposite copper surface is exposed). The opposite surface is then milled to create the flange.
- This method does not require the use of polyimide adhesive.
- the use of lamination instead of thermoplastic polyimide adhesion is better suited for the manufacture of earless headers.
- one or both faces of copper can be photoetched to define the array of leads and bases.
- Thermoplastic polyimide is generally compatible with the acids used for photoetching. However, care must be exercised when stripping the photoresist in a basic solution. Photoetching has the advantage of creating air cavity packages having multiple, narrowly spaced leads.
- Variations in the lamination process may be utilized to reduce post-lamination machining.
- a sheet of polyimide e.g., a 20 mil thick sheet of Cirlex®
- a sheet of polyimide can be punched with an array of thru-holes and then laminated with sheets of photoetched Cu: the top panel photoetched into an array of electrical leads and the backside panel photoetched into an array of bases or flanges.
- Alignment holes and pins can be used to align the Cu/polyimide/Cu stack prior to lamination.
- the individual headers can be liberated by punching through the thickness of the sheet and tie bars.
- the air cavity packages of the present disclosure may be particularly suitable for commercial devices (e.g., cellular base station amplifiers). Such devices are not typically subjected to temperature cycling in the field. Therefore, moisture uptake is reduced.
- Commercial laterally diffused metal oxide semiconductor (LDMOS) silicon transistors used in base stations must be in air cavity packages compatible with Moisture Sensitivity Level 3 (MSL 3). Essentially, MSL 3 exposes the lidded assembly to 30°C + 60% relative humidity for 192 hours, followed by a specific solder reflow thermal profile that peaks at 200°C. The lidded package must then pass gross leak testing in Fluoroinert, and pass other testing requirements. Current manufacturers extensively use epoxy overmolded packages. Such packages are low cost and pass MSL 3. However, epoxy overmolded packages do not have an air cavity. Therefore, the RF properties of the transistor are degraded.
- LDMOS Moisture Sensitivity Level 3
- the air cavity packages of the present disclosure may generally be able to withstand the sequential steps of AuSn die attachment (320°C), lid sealing with epoxy (160°C), and temperature cycling (e.g., -50°C to 85°C for 1000 cycles).
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201580040029.5A CN106537579A (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
US14/652,326 US20170069560A1 (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
SG11201609799QA SG11201609799QA (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
EP15796186.3A EP3146560A4 (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
JP2016568916A JP2017518640A (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
PH12016502321A PH12016502321A1 (en) | 2014-05-23 | 2016-11-22 | Air cavity package |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462002336P | 2014-05-23 | 2014-05-23 | |
US62/002,336 | 2014-05-23 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2015179733A1 true WO2015179733A1 (en) | 2015-11-26 |
Family
ID=54554818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2015/032124 WO2015179733A1 (en) | 2014-05-23 | 2015-05-22 | Air cavity package |
Country Status (7)
Country | Link |
---|---|
US (1) | US20170069560A1 (en) |
EP (1) | EP3146560A4 (en) |
JP (1) | JP2017518640A (en) |
CN (1) | CN106537579A (en) |
PH (1) | PH12016502321A1 (en) |
SG (1) | SG11201609799QA (en) |
WO (1) | WO2015179733A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017196781A1 (en) * | 2016-05-09 | 2017-11-16 | Materion Corporation | Air cavity package |
WO2017201260A1 (en) * | 2016-05-20 | 2017-11-23 | Materion Corporation | Copper flanged air cavity packages for high frequency devices |
JP2018143243A (en) * | 2015-08-31 | 2018-09-20 | 日立化成株式会社 | Molecular methods for assessing post kidney transplant complications |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US12074099B2 (en) | 2021-05-07 | 2024-08-27 | Materion Corporation | Microelectronics package assemblies and processes for making |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6399178B1 (en) * | 1998-07-20 | 2002-06-04 | Amerasia International Technology, Inc. | Rigid adhesive underfill preform, as for a flip-chip device |
US6511866B1 (en) * | 2001-07-12 | 2003-01-28 | Rjr Polymers, Inc. | Use of diverse materials in air-cavity packaging of electronic devices |
US6650019B2 (en) * | 2000-07-20 | 2003-11-18 | Amkor Technology, Inc. | Method of making a semiconductor package including stacked semiconductor dies |
US6867367B2 (en) * | 2003-01-29 | 2005-03-15 | Quantum Leap Packaging, Inc. | Package for integrated circuit die |
US7282797B2 (en) * | 2005-05-27 | 2007-10-16 | Motorola, Inc. | Graded liquid crystal polymer package |
US7541220B2 (en) * | 2004-04-01 | 2009-06-02 | Agere Systems Inc. | Integrated circuit device having flexible leadframe |
US8410589B2 (en) * | 2008-08-22 | 2013-04-02 | Sumitomo Chemical Company, Limited | Lead frame, resin package, semiconductor device and resin package manufacturing method |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06252194A (en) * | 1993-02-26 | 1994-09-09 | Toshiba Corp | Semiconductor device |
JPH07307420A (en) * | 1994-05-12 | 1995-11-21 | Shinko Electric Ind Co Ltd | Semiconductor device |
JPH08115996A (en) * | 1994-08-23 | 1996-05-07 | Tokuyama Corp | Semiconductor chip mounting package |
JPH08113765A (en) * | 1994-10-17 | 1996-05-07 | Mitsui Toatsu Chem Inc | Heat bonding composite tape |
JPH0945839A (en) * | 1995-08-03 | 1997-02-14 | Shinko Electric Ind Co Ltd | Package for semiconductor device use and semiconductor device |
US6056186A (en) * | 1996-06-25 | 2000-05-02 | Brush Wellman Inc. | Method for bonding a ceramic to a metal with a copper-containing shim |
US6072211A (en) * | 1998-08-03 | 2000-06-06 | Motorola, Inc. | Semiconductor package |
WO2001099124A1 (en) * | 2000-06-21 | 2001-12-27 | Dai Nippon Printing Co., Ltd. | Laminate and use thereof |
JP4178843B2 (en) * | 2002-06-13 | 2008-11-12 | ソニー株式会社 | COOLING DEVICE, ELECTRONIC DEVICE DEVICE, AND COOLING DEVICE MANUFACTURING METHOD |
JP2006128534A (en) * | 2004-11-01 | 2006-05-18 | Sumitomo Metal Electronics Devices Inc | Package for storing high heat radiation type electronic component |
JP4604893B2 (en) * | 2005-07-19 | 2011-01-05 | 住友電気工業株式会社 | Composite porous resin substrate and method for producing the same |
US20070029664A1 (en) * | 2005-08-05 | 2007-02-08 | Cree Microwave, Llc. | Integrated circuit package and method of assembling the same |
JP2007088190A (en) * | 2005-09-22 | 2007-04-05 | Sumitomo Metal Electronics Devices Inc | Package for receiving high heat-dissipation electronic component |
US7429790B2 (en) * | 2005-10-24 | 2008-09-30 | Freescale Semiconductor, Inc. | Semiconductor structure and method of manufacture |
JP2010512665A (en) * | 2006-12-12 | 2010-04-22 | インタープレックス,キューエルピー,インコーポレイテッド | Plastic electronic device package |
US20090028491A1 (en) * | 2007-07-26 | 2009-01-29 | General Electric Company | Interconnect structure |
US8067834B2 (en) * | 2007-08-21 | 2011-11-29 | Hvvi Semiconductors, Inc. | Semiconductor component |
US8143717B2 (en) * | 2008-06-16 | 2012-03-27 | Hcc Aegis, Inc. | Surface mount package with ceramic sidewalls |
JP5442491B2 (en) * | 2010-02-26 | 2014-03-12 | 新日鉄住金化学株式会社 | Thermally conductive metal-insulating resin substrate and manufacturing method thereof |
WO2012029549A1 (en) * | 2010-08-30 | 2012-03-08 | 住友ベークライト株式会社 | Semiconductor package, and semiconductor device |
US8969132B2 (en) * | 2010-09-20 | 2015-03-03 | Nuvotronics, Llc | Device package and methods for the fabrication thereof |
JP2012094701A (en) * | 2010-10-27 | 2012-05-17 | Kyocera Corp | Package for housing semiconductor element and module including the package |
-
2015
- 2015-05-22 JP JP2016568916A patent/JP2017518640A/en active Pending
- 2015-05-22 WO PCT/US2015/032124 patent/WO2015179733A1/en active Application Filing
- 2015-05-22 US US14/652,326 patent/US20170069560A1/en not_active Abandoned
- 2015-05-22 CN CN201580040029.5A patent/CN106537579A/en active Pending
- 2015-05-22 SG SG11201609799QA patent/SG11201609799QA/en unknown
- 2015-05-22 EP EP15796186.3A patent/EP3146560A4/en not_active Withdrawn
-
2016
- 2016-11-22 PH PH12016502321A patent/PH12016502321A1/en unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6399178B1 (en) * | 1998-07-20 | 2002-06-04 | Amerasia International Technology, Inc. | Rigid adhesive underfill preform, as for a flip-chip device |
US6650019B2 (en) * | 2000-07-20 | 2003-11-18 | Amkor Technology, Inc. | Method of making a semiconductor package including stacked semiconductor dies |
US6511866B1 (en) * | 2001-07-12 | 2003-01-28 | Rjr Polymers, Inc. | Use of diverse materials in air-cavity packaging of electronic devices |
US6867367B2 (en) * | 2003-01-29 | 2005-03-15 | Quantum Leap Packaging, Inc. | Package for integrated circuit die |
US7541220B2 (en) * | 2004-04-01 | 2009-06-02 | Agere Systems Inc. | Integrated circuit device having flexible leadframe |
US7282797B2 (en) * | 2005-05-27 | 2007-10-16 | Motorola, Inc. | Graded liquid crystal polymer package |
US8410589B2 (en) * | 2008-08-22 | 2013-04-02 | Sumitomo Chemical Company, Limited | Lead frame, resin package, semiconductor device and resin package manufacturing method |
Non-Patent Citations (1)
Title |
---|
See also references of EP3146560A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018143243A (en) * | 2015-08-31 | 2018-09-20 | 日立化成株式会社 | Molecular methods for assessing post kidney transplant complications |
WO2017196781A1 (en) * | 2016-05-09 | 2017-11-16 | Materion Corporation | Air cavity package |
US11227806B2 (en) | 2016-05-09 | 2022-01-18 | Materion Corporation | Air cavity package using high temperature silicone adhesive |
WO2017201260A1 (en) * | 2016-05-20 | 2017-11-23 | Materion Corporation | Copper flanged air cavity packages for high frequency devices |
US10163743B2 (en) | 2016-05-20 | 2018-12-25 | Materion Corporation | Copper flanged air cavity packages for high frequency devices |
Also Published As
Publication number | Publication date |
---|---|
US20170069560A1 (en) | 2017-03-09 |
CN106537579A (en) | 2017-03-22 |
PH12016502321A1 (en) | 2017-01-30 |
EP3146560A4 (en) | 2018-04-18 |
EP3146560A1 (en) | 2017-03-29 |
JP2017518640A (en) | 2017-07-06 |
SG11201609799QA (en) | 2016-12-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9105391B2 (en) | High voltage hold-off coil transducer | |
KR101138306B1 (en) | Die-bonding method of LED chip and LED manufactured by the same | |
US20170069560A1 (en) | Air cavity package | |
CN110326103B (en) | Semiconductor device and method for manufacturing the same | |
US20070029664A1 (en) | Integrated circuit package and method of assembling the same | |
JP2009513026A (en) | Semiconductor structure and assembly method | |
SE1251008A1 (en) | Semiconductor device including cladded base plate | |
JP6057927B2 (en) | Semiconductor device | |
JP6787180B2 (en) | Semiconductor devices and their manufacturing methods | |
US11227806B2 (en) | Air cavity package using high temperature silicone adhesive | |
JP2014150203A (en) | Power module and manufacturing method of the same | |
JP4220641B2 (en) | Resin mold circuit board and electronic package | |
JP2015170785A (en) | Insulation substrate and electric power semiconductor device | |
US12074099B2 (en) | Microelectronics package assemblies and processes for making | |
US10163743B2 (en) | Copper flanged air cavity packages for high frequency devices | |
CN112930595A (en) | Semiconductor device and method for manufacturing the same | |
WO2016125673A1 (en) | Semiconductor module and power control unit | |
JP2013135161A (en) | Semiconductor device and manufacturing method of the same | |
JP2013105789A (en) | Wiring body with wiring sheet, semiconductor device, and method for manufacturing semiconductor device | |
JPH08506454A (en) | Electronic chip carrier package and manufacturing method thereof | |
KR20100008257A (en) | High power semiconductor chip package and method for fabricating the same | |
JPWO2014156029A1 (en) | Semiconductor package and semiconductor device | |
US20230054798A1 (en) | Metal jointed body, semiconductor device, wave guide tube, and method for joining members to be joined | |
WO1997027626A1 (en) | Integrated circuit package having enhanced heat dissipation and grounding | |
JP4249366B2 (en) | Metal base circuit board and electronic module manufacturing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 14652326 Country of ref document: US |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 15796186 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2016568916 Country of ref document: JP Kind code of ref document: A |
|
REEP | Request for entry into the european phase |
Ref document number: 2015796186 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2015796186 Country of ref document: EP Ref document number: 12016502321 Country of ref document: PH |
|
NENP | Non-entry into the national phase |
Ref country code: DE |