WO2015169393A1 - Dispositif de blindage pour ensemble cathode rotatif et procédé de blindage d'espace sombre dans un appareil de dépôt - Google Patents

Dispositif de blindage pour ensemble cathode rotatif et procédé de blindage d'espace sombre dans un appareil de dépôt Download PDF

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Publication number
WO2015169393A1
WO2015169393A1 PCT/EP2014/059557 EP2014059557W WO2015169393A1 WO 2015169393 A1 WO2015169393 A1 WO 2015169393A1 EP 2014059557 W EP2014059557 W EP 2014059557W WO 2015169393 A1 WO2015169393 A1 WO 2015169393A1
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WO
WIPO (PCT)
Prior art keywords
shield
rotatable target
target
rotatable
fixture
Prior art date
Application number
PCT/EP2014/059557
Other languages
English (en)
Inventor
Harald Wurster
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to KR1020167034657A priority Critical patent/KR102141978B1/ko
Priority to PCT/EP2014/059557 priority patent/WO2015169393A1/fr
Priority to JP2017510728A priority patent/JP6393826B2/ja
Priority to CN201480078747.7A priority patent/CN106463326B/zh
Priority to TW104114535A priority patent/TWI713449B/zh
Publication of WO2015169393A1 publication Critical patent/WO2015169393A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)

Definitions

  • the present disclosure relates to a device for shielding a rotatable cathode, particularly to a shielding device having a shield and a fixture for connecting the shield to a rotatable cathode and a method for shielding a dark space region in a deposition apparatus.
  • sputtering can be used to deposit a thin layer such as a thin layer of a metal, e.g. aluminum, or ceramics.
  • the coating material is transported from a sputtering target of material to be coated by bombarding the surface of the target with ions of a typically inert processing gas at low pressure.
  • the ions are produced by electron impact ionization of the processing gas and accelerated by a voltage difference between the target, operating as a sputtering cathode, and an anode.
  • This bombardment of the target results in the ejection of atoms or molecules of the coating material, which accumulate as a deposited film on the substrate arranged opposite to the sputtering cathode, e.g. below the sputtering cathode.
  • a rotary cathode is typically supported by a cathode drive unit of the sputtering installation. Due to the geometry and design of the cathodes, rotatable targets typically have a higher utilization and an increased operation time than planar targets. Accordingly, the use of rotatable targets typically prolongs service life and reduces costs.
  • the cathode drive unit rotatably transfers movement to the rotary cathode. Given longitudinal extensions of rotary cathodes of, for instance, up to about 4 m and typical continuous operation times of sputtering installations of several days, the bearing of the cathode drive unit is typically desired to reliably support heavy mechanical loads over a long period of time.
  • dark room shields may be provided at both the drive end and the free end of the cathode.
  • the shield around the drive end of the cathode body should prevent the processing gas discharge from contacting the drive end.
  • the dark room shields may be mounted on the chamber wall or the drive unit and may be electrically isolated from the mounting surface.
  • Material sputtered from the edges of the target may contribute to non-uniform depositions.
  • the dark space shield reduces sputtering of the target edges by shielding the target edges from the plasma.
  • a film of the depositing material grows onto the surface of the dark room shields, on the area of the dark room shield surface facing the substrate.
  • the formed film begins to break into chips or fragments, usually in areas where the film is thicker. If the resulting fragments of material fall onto the substrate, the fragments obstruct deposition on the areas of the substrate, on which the fragments fall, resulting in defective products. Therefore, such a dark room shield has to be exchanged often, thus increasing the maintenance costs of the sputtering unit.
  • the dark room or dark space shield(s) often undergo thermal expansion. Therefore, the dark room or dark space shield(s) are often arranged to allow for longitudinal and lateral tolerances of thermal expansion, for example, by providing gaps or empty spaces between the dark space shield and other features of the deposition apparatus.
  • a shielding device for a rotatable cathode having a rotatable target for sputtering material onto a substrate includes: a shield configured for covering a portion of the rotatable target; and a fixture for connecting the shield to the rotatable target.
  • the fixture is configured for engaging with the shield to allow the shield to expand essentially away from the centre of the rotatable target in an axial direction of the rotatable target.
  • a shielding device for a rotatable cathode having a rotatable target for sputtering material onto a substrate includes: a shield configured for covering a portion of the rotatable target; and a fixture for connecting the shield to the rotatable target.
  • the fixture is configured for hanging the shield to allow the shield to expand essentially away from the centre of the rotatable target in an axial direction of the rotatable target.
  • a method for shielding a dark space region in a deposition apparatus during operation of the deposition apparatus.
  • the method providing a fixture for connecting a shield to a rotatable target of the deposition apparatus, assembling a plurality of parts together, wherein forming the shield for covering a portion of the rotatable target for shielding the dark space region in the deposition apparatus.
  • the shield is assembled to engage with the rotatable target such that the shield expands essentially away from the centre of the rotatable target in an axial direction of the rotatable target during operation of the deposition apparatus.
  • a method for shielding a dark space region in a deposition apparatus during operation of the deposition apparatus.
  • the method providing a fixture for connecting a shield to a rotatable target of the deposition apparatus, assembling a plurality of parts together, wherein forming the shield for covering a portion of the rotatable target for shielding the dark space region in the deposition apparatus.
  • the shield is assembled to hang from the rotatable target such that the shield expands essentially away from the centre of the rotatable target in an axial direction of the rotatable target during operation of the deposition apparatus.
  • FIG. 1 shows schematically a side view of a shielding device, a rotatable target and cathode drive of a deposition apparatus for sputtering material on a substrate according to embodiments;
  • FIG. 2 shows an enlarged view of section A of the embodiment shown in Fig. 1 according to embodiments;
  • FIG. 3 shows schematically an exploded view of the shield of the shielding device according to embodiments
  • FIG. 4 shows schematically a part of the shielding device for connecting a dark space shield to a rotatable target according to embodiments
  • FIG. 5 shows schematically a further part of the shielding device for connecting a dark space shield to a rotatable target according to embodiments
  • Fig. 6 shows schematically a top view of a dark room shield according to embodiments
  • Fig. 7 shows schematically a shield part in a three-dimensional view according to embodiments
  • FIG. 8 shows schematically a cross-section of a sputtering installation according to embodiments.
  • FIG. 9 shows schematically a cross-section of a sputtering installation according to embodiments.
  • the embodiments of the present disclosure relate to nano- manufacturing technology solutions involving equipment, processes, and materials used in the deposition of thin films and coatings, with representative examples including (but not limited to) applications involving: semiconductor and dielectric materials and devices, silicon-based wafers, flat panel displays (such as TFTs), masks and filters, energy conversion and storage (such as photovoltaic cells, fuel cells, and batteries), solid-state lighting (such as LEDs), magnetic and optical storage, micro- electromechanical systems (MEMS) and nano-electro-mechanical systems (NEMS), micro-optic and optoelectronic devices, architectural and automotive glasses, metallization systems for metal and polymer foils and packaging, and micro- and nano- molding.
  • semiconductor and dielectric materials and devices silicon-based wafers, flat panel displays (such as TFTs), masks and filters, energy conversion and storage (such as photovoltaic cells, fuel cells, and batteries), solid-state lighting (such as LEDs), magnetic and optical storage, micro- electromechanical systems (MEMS) and nano-elect
  • Sputtering is a process in which atoms are ejected from a solid target material due to bombardment of the target by energetic particles.
  • the process of coating a substrate as a material at the scraping refers typically to thin film applications.
  • coating and the term “depositing” are used interchangeably herein.
  • sputtering installation and “deposition apparatus” are used interchangeably herein and shall refer to an apparatus which uses sputtering for depositing a target material, typically as a thin film, on a substrate.
  • Typical target materials include (but are not limited to) pure metals such as aluminum (Al), copper (Cu), silver (Ag) and gold (Au); metal alloys such as an aluminum-niobium (AINb) alloy or an aluminum-nickel (AINi) alloy; semiconductor materials such as silicon (Si); and dielectric materials such as nitrides, carbides, titanates, silicates, aluminates and oxides, e.g. transparent conducting oxides (TCO) such as impurity-doped ZnO, e.g. ZnO:Al, AlZnO, In203, Sn02 and CdO, as well as Sn-doped In203 (ITO) and F-doped Sn02.
  • Oxides, nitrides, oxynitrides and the like can also be deposited by reactive sputtering, wherein the target material reacts with a reactive gas within the processing gas.
  • substrate as used herein shall refer to both inflexible substrates, e.g., a wafer or a glass plate, and flexible substrates, such as, webs and foils.
  • dark space shield shall refer to shields that generally prevent sputtering of unwanted parts of the cathode.
  • the terms “dark space shield” and “dark room shield” are used interchangeably herein.
  • FIG. 1 shows a section 100 of a deposition apparatus for sputtering material on a substrate in a typical cross-section along a direction which is parallel to a rotational axis 50 defined by a rotatable target 10.
  • the section 100 includes a drive unit 30 for rotating the rotatable target 10 and a shielding device 20 connected to the rotatable target 10 for covering at least a part of the rotatable target 10.
  • the rotatable target may rotate around the rotational axis 50.
  • the shield 21 of the shielding device 20 may cover a portion of the rotatable target 10, such as for instance, a bottom end 15 of the rotatable target 10.
  • the bottom end 15 of the rotatable target 10 may be defined as the end of the rotatable target 10 that is connected to the drive unit 30.
  • the middle section 16 of the rotatable target 10 may be used for depositing material on a substrate during operation of the sputtering apparatus.
  • the term “middle section” and the term “uncovered section” are used interchangeably herein.
  • the top end 17 of the rotatable target 10 may be covered by a shielding device (not shown in the Figures) to, for instance, prevent gas discharge caused by electrical field accumulation.
  • axial direction intends to describe a direction which is parallel to the rotational axis 50.
  • radial direction intends to describe a direction, which is orthogonal to the rotational axis 50 and points away from the rotational axis 50.
  • axial distance intends to describe the distance in direction of the rotational axis 50.
  • axial extension intends to describe the extension in direction of the rotational axis 50.
  • FIG. 2 shows schematically an excerpt 60 of the section 100 of the deposition apparatus for sputtering material on a substrate shown in Fig. 1.
  • the shielding device 20 according to embodiments herein is shown assembled around the drive end of a rotatable target 10.
  • the shield 21 of the shielding device 20 includes a first section 26 and a second section 27.
  • the first section may be described as the section of the shield, which covers a portion of the rotatable target in axial direction of the target above the attachment point of the rotatable target to the drive.
  • the second section may be described as the section of the shield, which covers a portion of the rotatable target in axial direction of the target at the attachment point of the rotatable target to the drive and optionally the second section may extend in axial direction below the attachment point of the rotatable target to the drive.
  • the diameter of the first section 26 of the shield 21 may be smaller than the diameter of the second section 27 of the shield 21.
  • the diameter of the first section 26 of the shield 21 may essentially be the same as the diameter of the rotatable target 10.
  • the diameter of the target 10 may be defined as being the diameter of the portion of the rotatable target 10 directly above the shield 21 of the shielding device 20.
  • the portion of the rotatable target 10 in axial direction parallel to the rotational axis 50 directly above the shield 21 may be used for depositing material on a substrate during operation of the deposition apparatus.
  • the fixture 80 for connecting the shield 21 to the rotatable target 10 may be connected to the shield 21 in the first section 26 of the shield 21.
  • the fixture 80 for engaging with the shield 21 may be connected to the shield 21 at the inner perimeter of the shield 21.
  • the fixture can engage with the shield by a fixation element like one or more screws or the like and/or the fixture can be configured to hang the shield at the fixture as described herein.
  • a guiding device 90 for stabilizing and/or guiding the shield may be attached to the drive of the deposition apparatus.
  • the guiding device 90 may be covered by the second section 27 of the shield 21.
  • the guiding device can radially center the shield.
  • Fig. 3 shows schematically an exploded view of the excerpt 60 of the section 100 of the deposition apparatus for sputtering material on a substrate shown in Fig. 1.
  • the shield may include one or more notches, trenches, channels, or hollows formed along the radial inner perimeter of the dark room shield 21.
  • the notch 22 may be located at an axial position of the shield, which is within 50 % or less, particularly within 20 % or less, of the upper end of the shield 21.
  • the notch 22 may include an overhang or protrusion 23 for securely connecting the fixture 80 and the shield 21 to one another.
  • the notch 22 may be dimensioned to receive at least part of the fixture 80 so that the shield 21 may be connected to the rotatable target 10 via the fixture 80.
  • the fixture 80 such as for instance a PEEK ring, may be clamped to the rotatable target 10.
  • the rotatable target 10 may include one or more notches, trenches, channels, or hollows formed along the outer perimeter of the rotatable target 10 adapted for receiving the fixture 80.
  • the notch 11 may be referred to as first notch hereinafter.
  • the first notch 11 may be located at the drive end of the rotatable target 10 in order to be covered by the shield 21 of the shielding device 20 during operation of the deposition apparatus.
  • the rotatable target 10 may include a recessed portion or notch 12.
  • the recessed portion or notch 12, also referred to as second notch hereinafter, may be adapted to receive the shielding device 20 such that when the shielding device 20 is mounted to the rotatable target 10, the outer surface of the rotatable target 10 involved in the deposition process and the outer surface of the upper end of the shield 21 are in the same plane (see plane 70 shown in Fig. 2).
  • the first notch 11 adapted for receiving the fixture to connect the shield to the rotatable target may be located within the second notch 12.
  • the fixture itself may be covered by the shield during operation of the deposition apparatus.
  • a shielding device which may cover a portion of a target, such as for instance, a portion of a rotatable target.
  • the shielding device may include a shield and a fixture for connecting the shield to the target.
  • the fixture may be configured to allow the shield to expand essentially away from the centre of the target in an axial direction of the target (see arrows 25 in Fig. 2).
  • the term "essentially” used herein to describe the axial expansion of the shield is to be understood as meaning that a majority of the shield may expand away from the centre of the target (see reference number 13 in Fig. 1) in an axial direction of the target. For instance, 50 % or more, particularly within 70 % or more of the shield may expand away from the centre of the target in an axial direction of the target.
  • the shield may be connectable to the fixture at an axial position of the shield, which is within 50 % or less, particularly within 20 % or less, of the upper end of the shield.
  • the upper end of the shield may be defined as the end of the shield that is closest to the centre of the rotatable target.
  • the upper end of the shield may be defined as the end of the shield opposite to the end of the shield, in an axial direction thereof, which is facing the drive unit.
  • the centre of gravity of the shield may be below the point of attachment of the shield to the rotatable target. For instance, the centre of gravity of the shield when the shield is arranged around a portion of a target may be below the fixture for connecting the shield to the target.
  • the shield may include a specialized attachment site that is located within 50 % or less, particularly within 20 % or less, of the upper end of the shield.
  • the shield may include a notch.
  • the notch may be positioned on the inside perimeter of the shield such that when the shield is installed around a target, the notch is facing the target.
  • the notch may extend partly or completely along the inner perimeter of the shield.
  • the terms "notch” and the term “channel” are used interchangeably herein.
  • the notch of the shield or at least a part of the notch may include a bottom region enclosed by a sidewall on either side.
  • at least one of the sidewalls may include an overhang structure or protrusion extending at least along part of the sidewall for maintaining the fixture in a predetermined position.
  • the fixture of the shielding device may be adapted to hang or suspend the shield from a target such as a rotary target.
  • a target such as a rotary target.
  • the terms "hanging” or “suspending” are used interchangeably herein.
  • Hanging or suspending the shield as described herein generally means that when the shield is connected to the rotatable target for covering a portion of the rotatable target, the shield is essentially not supported from below the fixture. During thermal cycling, this enables the shield to expand downwards from the attachment point to the fixture (e.g. see Fig. 2).
  • the shield may expand in an axial direction away from the centre of the target and towards the drive end of the target. The expansion of the shield may thus be controlled and directed into a predetermined direction.
  • the shield may expand essentially in a single direction towards the earth's surface.
  • the fixture and/or the guiding device may include an insulating material.
  • the insulating material may optionally include a thermal-resistant plastic.
  • the thermal-resistant plastic can improve the use in a sputter deposition chamber.
  • the shielding device may further include a guiding device for guiding and stabilizing the shield in a direction perpendicular or radial to the axial direction of the shield.
  • the guiding device may stabilize the shield against movements in a direction away from the axis of rotation of the shield.
  • the guiding device may be adapted to be connected to the drive of a deposition apparatus.
  • the guiding device may include one or more friction reducing sections at contact points to the shield.
  • the one or more friction reducing sections may be moveable together with the shield.
  • the friction reducing sections may be independently moveable from the rest of the guiding device.
  • the friction reducing section may be one or more rollers.
  • the shield may include a friction reducing section at the contact point to the guiding device.
  • the shield is typically electrically isolated from the rotatable target.
  • at least the contact surfaces of the fixture and the guiding device with the shield may be made of an isolating material.
  • the isolating material may, for example, be a thermal-resistant plastic such as polyether ether ketone (PEEK).
  • the rotatable target may include a specialized attachment site for connecting the shield to the rotatable target via the fixture.
  • the attachment site may be a first notch extending along the outer perimeter of the target.
  • the first notch may extend partly or completely along the outer perimeter of the target.
  • the fixture may, for instance, be in a form-fit or snap-fit attachment with the rotatable target, which includes locating and locking features (constraint features).
  • the rotatable target may include a recessed portion or second notch.
  • the recessed portion or second notch of the rotatable target may be adapted to provide a space or gap for accommodating the shielding device. This space or gap is adapted such that the shield and the surface of the rotatable target that is used in the deposition of material onto a substrate essentially are in a common plane.
  • the junction between the shield and the rotatable target may form an essentially flat or flush transition region.
  • the section of the rotatable target directly above the upper end of the shield of the shielding device and the upper end of the shield of the shielding device may be in the same plane. This ensures a homogenous deposition of material onto the substrate during operation of the deposition apparatus.
  • the first notch of the rotatable target for connecting the fixture of the shielding device thereto may be positioned within the second notch or recessed portion of the rotatable target.
  • the shielding device 20 as shown in the Figures may include a segmented dark space shield 21 adapted for rotating together with the rotatable target 10.
  • the segmented dark space shield may be sectioned into two segments (also called “parts” herein).
  • the term “segmented” as used herein, intends to describe a dark space shield as consisting of many parts assembled together.
  • the terms “segmented”, “multi-part”, and “in several parts” are used simultaneously herein.
  • the shield has an uneven surface with a typical roughness of between RZ 25 and RZ 70.
  • the dark space shield may be segmented into a plurality of segments, which can be assembled together.
  • the at least two parts can be fixed together when the shield is mounted to the target, for instance, by use of a securing device such as a fastener.
  • the segments may be separate pieces, or alternatively, the segments may be linked together by, e.g., a hinge or a joint.
  • the hinge or joint may be positioned on the inner side of the segments with respect to the radial direction.
  • the dark space shield can easily be arranged over at least a part of the rotatable target and be mounted thereto.
  • a one-piece shield would have to be placed over the target in order to be arranged over at least a part of the target. Since targets can have substantial lengths of up to some meters, and since the target material may be easily susceptible to a contact with the shield, the maintenance efforts can be essentially reduced by the use of the multi-part shield as described herein.
  • the shield or at least parts thereof may be assembled concentrically to the rotatable target.
  • rotatable target shall refer to any cathode assembly, which is adapted to be rotatably mounted to a sputtering installation.
  • a rotatable target includes a target structure adapted for being sputtered.
  • the term "rotatable target” as used herein shall particularly refer to magnetically-enhanced cathode assemblies, in which the assemblies are enhanced with the addition of internal magnetic units, e.g. permanent magnets, for improved sputtering.
  • Rotatable targets in the following also referred to as rotatable sputtering cathodes or rotary cathodes, may be made of a hollow cylindrical body of the target material. These rotary targets are also referred to as monolithic targets and may be manufactured by casting or sintering these targets from the target material.
  • Non-monolithic rotatable targets typically include a cylindrical rotatable tube, e.g. a backing tube, having a layer of the target material applied to the outer surface thereof.
  • the target material may, for example, be applied by spraying onto, or casting or isostatic pressing of powder onto the outer surface of a backing tube.
  • a hollow cylinder of a target material which may also be referred to as a target tube, may be arranged on and bonded, e.g. with indium, to the backing tube for forming a rotary cathode.
  • non-bonded target cylinders can be provided radially outward from a backing tube.
  • Magnetic units which may include an array of magnets, may be arranged inside the sputtering cathode, e.g. inside a backing tube or inside a monolithic target, and provide a magnetic field for magnetically-enhanced sputtering.
  • the cathode is typically rotatable about its longitudinal axis so that the cathode can be turned relative to the magnetic units.
  • end or edge as use herein in the context of the rotatable target or cathode shall refer to the end or edge in the axial direction of the cathode or the target.
  • the outer cross-section of a target or a cathode is circular with a diameter of, for instance, between 8 cm and 30 cm, whereas the length of the target or cathode can be several meters, such as up to 0.3 m or even up to 4 m.
  • electrically non-screened cathodes may suffer from gas discharge (arcing) at the cathode edges due to electrical field accumulation. This discharge is not desired.
  • the region of gas discharge next to the cathode ends is called a "dark room”.
  • dark room shields may be arranged to cover one or both ends of the cathode.
  • a shield for screening the dark room region of the target.
  • the shield is typically made of an isolator.
  • Targets screened by means of non-rotating shields may suffer from material deposition only on one side of the dark room shield during the sputtering process.
  • the resulting film formed on the dark room shield surface may fragment after several deposition cycles and material particles may be liberated which could be deposited on the surface of the substrate, masking the deposition of the sputtered material to the substrate and causing defects in the products.
  • the aforesaid material particles may generally accumulate and contaminate the deposition apparatus.
  • the surface of the dark room shield is exposed to the material deposition.
  • the layer of material is deposited in a uniform manner, forming a film across the surface of the dark room shield. This means that the film may be deposited for a longer period of time before fragmenting, which reduces the likelihood that fragments of the film fall onto the substrate. The risk of contamination of the substrate and deposition apparatus, maintenance time and costs compared to serving a non- rotating dark room shield may thus be reduced.
  • the plurality of segments may be cylinder segments, which when assembled together form a cylindrically shaped shield. Typically, two segments are provided each covering 180° of the cylinder perimeter. According to further embodiments, as for instance shown in Fig. 6, the shield 21 may be assembled from three segments 24 wherein each segment covers 120° of the cylinder.
  • the shield may be rotationally symmetric in a piecewise manner.
  • the at least two parts of the shield are cylinder section parts covering, for instance, 180° or 120° of the perimeter. Assembled together, the parts form a cylinder which can be, apart from the intersections between the parts, rotationally symmetric.
  • rotational symmetry if a part is called "rotational symmetry", the surface is identical after rotating the part. The rotation is undertaken with respect to a centre of rotation which is, in the case of cylinder sections, the centre of the cylinder.
  • the term surface does particularly include the surface on the radially outer perimeter.
  • the shield may include more than three parts, e.g. four, six or more parts that together cover 360° of the cylinder.
  • FIG. 7 A cross-sectional view of a rotationally symmetric cylinder section is shown in Fig. 7.
  • the shield part or segment 24, which covers 180° of the cylinder, has a centre 26.
  • the illustratively shown arrow 25 shall illustrate that the part can be rotated at 180° and the surface, in particular the radially outer surface, is identical.
  • the shield segments may not have a hole, for instance, for receiving screws or pins or the like.
  • a hole would render the shield parts rotationally non-symmetrical.
  • holes were provided for assembling the shields with other elements.
  • any rotationally non-symmetric shape in the shield results in a disturbance of the electrical field during sputtering. This, in turn, results in a reduced homogeneity of the layer on the coated substrates.
  • the holes were provided for allowing screws or the like to be inserted.
  • the shield for instance, for maintenance, it is necessary to unscrew the screws. This is time consuming, in particular, because the screw head becomes coated during sputtering, and, in order to dissemble or demount the shield, it is necessary to, first, remove the coating from the screws' heads, and second, to unscrew the screws.
  • the rotatable target may include a top shield.
  • the top shield is positioned at the top end of the rotatable target.
  • the term "top end” shall be understood as the end of the target which is opposite, in axial direction of the target, to the end which is connected to the drive (called “drive end” of the rotatable target herein).
  • the top shield is adapted for rotating together with the rotatable target.
  • the top end shield or at least parts thereof may be assembled concentrically to the rotatable target.
  • the fixture or elements connecting the shield to a rotary target can be adapted to facilitate such repetitive thermal expansion without impairing the rotary target.
  • the shield may be attached to the cathode drive in order to cover the drive end of the rotatable target.
  • the drive supports the shield and the rotary target.
  • the shield expands in an axial direction of the target away from the supporting drive and towards the centre of the rotary target. Therefore, large spaces or gaps may be provided between the shield at the drive end and the rotary target in order to allow for the thermal expansion of the shield. These spaces may reduce the surface area of the target used for depositing material onto a substrate.
  • FIG. 4 shows schematically a part of the shielding device for connecting a dark space shield to a rotatable target according to embodiments.
  • Fig. 4 shows an enlarged view of an excerpt 61 of the embodiment shown in Fig. 2.
  • the fixture 80 may be connected to a first notch 11 of the rotatable target 10.
  • the notch 11 may, for instance, be milled into the rotatable target.
  • the fixture 80 may include a hook- shaped portion that inserts into the notch 22 of the shield 21.
  • the shield 21 may be suspended or hung from the hook-shaped portion.
  • an overhang structure or protrusion 23 may retain the fixture 80 positioned inside of the notch 22.
  • the overhang structure or protrusion 23 may extend in an axial direction of the shield 21 towards the bottom end of the shield 21.
  • the overhang structure or protrusion 23 may be positioned at an edge of the notch 22, in particular, at an edge of the notch 22 that is closest to the upper end of the shield 21.
  • the fixture 80 may be configured such that the shield is spaced away from the rotatable target at a distance from 1.5 mm to 4.5 mm, e.g. about 3 mm + 0.5 mm. Since the shield 21 may be hung or suspended from the fixture 80, the gap or distance 40, 41 between the shield and the rotatable target may essentially be kept constant during thermal cycling operations. In particular, the gap or distance 40 in the axial direction between the upper end of the shield 21 and the rotatable target 10 may essentially be kept constant during thermal cycling due to the specialized fixture 80 that is adapted for hanging the shield 21, which allows the shield 21 to expand essentially downwards, away from the centre of the rotatable target, during thermal cycling. Beneficially, the extend of the surface of the rotatable target used during the operation of the deposition apparatus for depositing material onto a substrate is essentially kept constant, which may ensure the homogeneity of the layer of material deposited on the substrate.
  • Fig. 5 shows schematically a further part of the shielding device for connecting a dark space shield to a rotatable target according to embodiments.
  • Fig. 5 shows an enlarged view of an excerpt 62 of the embodiment shown in Fig. 2.
  • Fig. 5 shows a bottom section of the shielding device 20.
  • the bottom part of the shield 21 of the shielding device 20 may be adapted to cover a bottom end of the rotatable target 10.
  • the bottom end of the rotatable target 10 may include the part of the rotatable target that is connected to the drive of the deposition apparatus.
  • the shield 21 of the shielding device 20 may be spaced 41 from the rotatable target in a direction perpendicular to the axial direction of the rotatable target, which may essentially be kept constant during thermal cycling operations of the deposition apparatus.
  • the distance or gap 41 between the rotatable target and the shield 21 may be from 1.5 mm to 4.5 mm, e.g. about 3 mm + 0.5 mm.
  • the shielding device 20 may include a guiding device 90 for stabilizing the bottom end of the shield 21 of the shielding device 20.
  • the guiding device may stabilize the shield 21 in a direction perpendicular to the axial direction of the shield or in a radial direction from the rotatable target.
  • the guiding device may be adapted to be connected to the drive of the deposition apparatus.
  • the guiding device may include a friction reducing section at a contact point to the shield 21 of the shielding device 20.
  • the friction reducing section may be a moveable section.
  • the moveable section of the friction reducing section may be adapted to be moveable together with the shield 21 during operation of the deposition apparatus.
  • the guiding device 90 and the shield 21 of the shielding device 20 may be configured such that a gap or space 42 is formed in an axial direction between the guiding device 90 and the shield 21 of the shielding device 20.
  • the gap 42 may be adapted to allow the shield 21 to freely expand downwards from the centre of the rotatable target during thermal cycling operations of the deposition apparatus.
  • the gap 42 may be smaller in size when the shield 21 is in an expanded state as opposed to when the shield is in a non-expanded state.
  • Fig. 8 shows schematically a cross-section of a sputtering installation 200 along the rotational axis 50 according to embodiments.
  • the sputtering installation 200 typically includes a process chamber 220 formed by walls 231 and 232.
  • the axis 50 of the cathode, the target, or the backing tube is essentially parallel to the wall 231, wherein a drop-in configuration of the cathode is realized.
  • At least one end-block 101 which may include a drive for rotating a rotatable target, is mounted into the process chamber 220.
  • the base body 110 is typically fastened via an insulating plate 116 and to a flap or door 230 of the process chamber 220. During sputtering, the flap or door 230 is closed. Accordingly, the base body 110 is typically stationary, at least non-rotatable, during sputtering.
  • the external housing 125 may be fastened directly to a wall 231 of the process chamber 220.
  • a rotating drive 150 typically an electrical drive is arranged outside the process chamber 220 via a mounting support 152.
  • the rotating drive 150 may, however also be placed within the external housing 125.
  • the rotating drive 150 drives the rotatable target 10 during sputtering via its motor axis 154, a pinion 153 connected thereto and a chain or a toothed belt (not shown) which loops around the pinion 153 and a gear-wheel 151 attached to a bearing housing 123 of the rotor 122.
  • coolant support tubes 134 and/or electrical support lines are fed from the coolant supply and discharge unit 130 and/or an electrical support unit through the external housing 125 to the outside of the process chamber 220.
  • the rotatable target 10 is typically supported by the end- block 101.
  • the rotatable target 10 may be further supported at its upper end.
  • a shielding device 20 as described in more detail with respect to the previous Figures may cover at least a portion of the target 10.
  • the shielding device may extend in an axial direction of the rotational axis 50 of the target 10 and cover at least a portion of the junction between the rotatable target 10 and the end-block 101.
  • the rotatable target 10 may be mounted to a target flange 121 of an end-block along the rotational axis 50.
  • the target flange 121 and the rotatable target 10 are coaxial to each other.
  • the shielding device 20 may extend in an axial direction to the rotational axis 50 of the target in order to cover at least a portion of the target flange 121.
  • the rotatable target 10 may be fitted to an upper part of the target flange 121 using an annular clamp, which presses the rotatable target 10 to the target flange 121.
  • An O-ring seal may be arranged between the target flange 121 and an adjoining part of the backing tube and the rotatable target 10, respectively. Accordingly, the rotatable target 10 may be vacuum- tightly mounted to the target flange 121.
  • the rotatable target 10 may be vacuum-tightly mounted to the upper part of the target flange 121 to, for instance, prevent fluid leakage to the low-pressure process chamber. This is typically achieved by an annular sealing (not shown).
  • At least one electric supply (not shown) for the rotatable target 10 may also be provided through the target flange 121.
  • both the target flange and the bearing housing may be made of an electrically conducting material, e.g. steel.
  • the electric current may flow from the current collector plate, through the bearing housing and the target flange to the rotatable target.
  • the target flange may be adapted to mechanically support the rotatable target.
  • coolant and electric supply for the target tube may be provided through the target flange.
  • Fig. 9 illustrates a sputtering installation 200 as shown in Fig. 8.
  • the schematic cross-section of Fig. 9 is orthogonal to the cross-section of Fig. 8.
  • the sputtering installation 200 has a vacuum chamber 220 including a gas inlet 201 for providing processing gas, for example argon, to the vacuum chamber 220.
  • the vacuum chamber 220 further includes a substrate support 202 and a substrate 203 arranged on the substrate support 202. Further, the vacuum chamber 220 includes a rotatable target 10.
  • a high voltage difference may be applied between the rotatable target 10 operating as a cathode and the substrate support 202 operating as an anode.
  • the plasma is typically formed by impact ionization of accelerated electrons with e.g. Argon atoms.
  • the formed Argon ions are accelerated in direction of rotatable target 10 such that particles, typically atoms, of the rotatable target 10 are sputtered and subsequently deposited on the substrate 203.
  • the pressure in the plasma area can be about 10 "4 mbar to about 10 - " 2 mbar, typically about 10 - " 3 mbar.
  • the vacuum chamber 220 may include one or more openings and/or valves for introducing or retracting the substrate 203 in or out of the vacuum chamber 220.
  • Magnetron sputtering is particularly advantageous in that its deposition rates are rather high.
  • By arranging one or more magnets 14 inside the rotatable target 10 free electrons within the generated magnetic field directly below the target surface may be trapped. This enhances the probability of ionizing the gas molecules typically by several orders of magnitude. In turn, the deposition rate may be increased significantly.
  • stationary or time varying magnetic fields may be used.
  • a cooling fluid may be circulating within rotatable target 10 for cooling the magnets 224 and/ or the target 10.
  • the rotatable target 10 may be supported by an end-block 101 which is not visible in the shown cross-section and therefore drawn as a dashed circle.
  • the end-block 101 may be non-rotatably mounted to a wall 231 or door 230 or flap of the process chamber 220, which is not visible in the shown cross-section and therefore drawn as a dashed rectangle.
  • a method for shielding a dark space region in a deposition apparatus during operation of the deposition apparatus includes providing a fixture for connecting a shield to a rotatable target of the deposition apparatus, wherein providing the fixture may include connecting the fixture to the rotatable target.
  • the method may further include assembling a plurality of parts together wherein forming the shield for covering a portion of the rotatable target for shielding the dark space region in the deposition apparatus, wherein the shield is assembled to hang from the rotatable target and/or engage with the rotatable target such that the shield expands essentially away from the centre of the rotatable target in an axial direction of the rotatable target during operation of the deposition apparatus.
  • Assembling a plurality of parts may, for instance, include assembling two or more shield parts for forming the shield.
  • the method for shielding a dark space region in a deposition apparatus during operation of the deposition apparatus may further include assembling the shield such that the shield hangs from the rotatable target at a point of attachment and wherein the centre of gravity of the shield is below the point of attachment.
  • the method may also include stabilizing the shield in a direction perpendicular to the axial direction of the shield.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

La présente invention porte sur un dispositif de blindage (20) pour cathode rotative comprenant une cible rotative (10) pour pulvérisation cathodique de matière sur un substrat et un procédé de blindage d'une région d'espace sombre dans un appareil de dépôt. Le dispositif de blindage (20) comprend un écran (21) configuré pour recouvrir une partie de la cible rotative (10) et un dispositif de fixation (80) destiné à relier l'écran (21) à la cible rotative (10). Le dispositif de fixation (80) est configuré pour venir en prise avec l'écran (21) pour permettre à l'écran de se déployer essentiellement à l'opposé du centre de la cible apte à tourner (10) dans une direction axiale de la cible rotative.
PCT/EP2014/059557 2014-05-09 2014-05-09 Dispositif de blindage pour ensemble cathode rotatif et procédé de blindage d'espace sombre dans un appareil de dépôt WO2015169393A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020167034657A KR102141978B1 (ko) 2014-05-09 2014-05-09 회전가능 캐소드를 위한 실딩 디바이스, 회전가능 캐소드, 및 증착 장치에서의 암공간을 실딩하기 위한 방법
PCT/EP2014/059557 WO2015169393A1 (fr) 2014-05-09 2014-05-09 Dispositif de blindage pour ensemble cathode rotatif et procédé de blindage d'espace sombre dans un appareil de dépôt
JP2017510728A JP6393826B2 (ja) 2014-05-09 2014-05-09 回転カソード用のシールド装置、回転カソード、及び堆積機器中の暗部のシールド方法
CN201480078747.7A CN106463326B (zh) 2014-05-09 2014-05-09 用于可旋转阴极的遮蔽装置、可旋转阴极以及用于遮蔽沉积设备中的暗空间的方法
TW104114535A TWI713449B (zh) 2014-05-09 2015-05-07 用於可旋轉陰極之遮蔽裝置及可旋轉靶及用於遮蔽在沈積設備中的暗區區域之方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2014/059557 WO2015169393A1 (fr) 2014-05-09 2014-05-09 Dispositif de blindage pour ensemble cathode rotatif et procédé de blindage d'espace sombre dans un appareil de dépôt

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WO2015169393A1 true WO2015169393A1 (fr) 2015-11-12

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KR (1) KR102141978B1 (fr)
CN (1) CN106463326B (fr)
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CN107779830A (zh) * 2017-11-09 2018-03-09 浙江大学昆山创新中心 一种应用于柱形旋转靶的挡板组件
KR102067820B1 (ko) * 2018-07-24 2020-01-17 (주)선익시스템 가변형 아크억제수단이 마련된 증착장비
WO2020030264A1 (fr) * 2018-08-08 2020-02-13 Applied Materials, Inc. Dispositif de pulvérisation, appareil de dépôt et procédé de fonctionnement d'un dispositif de pulvérisation

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CN107779830A (zh) * 2017-11-09 2018-03-09 浙江大学昆山创新中心 一种应用于柱形旋转靶的挡板组件
CN107779830B (zh) * 2017-11-09 2023-10-10 浙江大学昆山创新中心 一种应用于柱形旋转靶的挡板组件
KR102067820B1 (ko) * 2018-07-24 2020-01-17 (주)선익시스템 가변형 아크억제수단이 마련된 증착장비
WO2020030264A1 (fr) * 2018-08-08 2020-02-13 Applied Materials, Inc. Dispositif de pulvérisation, appareil de dépôt et procédé de fonctionnement d'un dispositif de pulvérisation

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KR102141978B1 (ko) 2020-08-06
KR20170005084A (ko) 2017-01-11
JP2017515000A (ja) 2017-06-08
CN106463326A (zh) 2017-02-22
TW201610195A (zh) 2016-03-16
CN106463326B (zh) 2018-07-13
JP6393826B2 (ja) 2018-09-19
TWI713449B (zh) 2020-12-21

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