WO2015141088A1

WO2015141088A1 - Light emitting device

Info

Publication number: WO2015141088A1
Application number: PCT/JP2014/083960
Authority: WO
Inventors: 秀隆大峡; 健太島崎; 昌紀駒田; 賢一奥山
Original assignee: パイオニア株式会社; 東北パイオニア株式会社
Priority date: 2014-03-20
Filing date: 2014-12-22
Publication date: 2015-09-24

Abstract

A light emitting element (102), a wiring line (300) and a terminal (302) are formed on a substrate (100). The wiring line (300) connects the terminal (302) to the light emitting element (102). The wiring line (300) comprises a first conductive layer (332), a second conductive layer (334) and a protective layer (340). The second conductive layer (334) is formed on the first conductive layer (332), and is formed of the same material as the first conductive layer (332). The protective layer (340) is conductive, and is formed on a part or the whole of the second conductive layer (334). In addition, the terminal (302) comprises the first conductive layer (332) and the second conductive layer (334). The first conductive layer (332) and the second conductive layer (334) are formed under different production conditions.

Description

Light emitting device

The present invention relates to a light emitting device.

In recent years, an organic EL element has been used as a light source of a light emitting device. The organic EL element has a configuration in which an organic layer is sandwiched between two electrodes. And these two electrodes are connected to the terminal via wiring.

Patent Document 1 describes that an electrode pad, which is an example of a terminal, is connected to a flexible printed board via an anisotropic conductive film. In Patent Document 1, an elastic layer made of an insulator is formed between an electrode pad and a substrate.

JP 2010-244850 A

The terminal may have a laminated structure of a conductive layer and a protective layer made of a conductive material. Since the protective layer is harder than the conductive layer, a connection member (for example, conductive particles) that connects the terminals to the outside may not break through the protective layer. In this case, the connection resistance between the terminal and the connection member is increased.

An example of a problem to be solved by the present invention is that when a terminal has a laminated structure of a conductive layer and a protective layer, the connection member easily breaks through the protective layer.

The invention according to claim 1 is a substrate;
A light emitting device formed on the substrate;
Terminals formed on the substrate;
With
The terminal is
A first conductive layer;
A second conductive layer located on the first conductive layer and made of the same material as the first conductive layer;
Have
The first conductive layer and the second conductive layer are light emitting devices having different hardnesses.

The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.

It is a top view which shows the structure of the light-emitting device which concerns on embodiment. It is sectional drawing for showing the structure of a light emitting element. It is AA sectional drawing for demonstrating the structure of a terminal. It is the figure which expanded the part enclosed with the dotted line of FIG. It is sectional drawing for demonstrating the structure which connected the terminal to the electrically-conductive member using anisotropic conductive resin. It is a top view of the light-emitting device concerning a modification. 1 is a plan view of a light emitting device according to Example 1. FIG. It is the figure which removed the sealing member, the partition, the 2nd electrode, the organic layer, and the insulating layer from FIG. FIG. 8 is a sectional view taken along line BB in FIG. It is CC sectional drawing of FIG. FIG. 8 is a DD sectional view of FIG. 7. 6 is a plan view illustrating a configuration of a light emitting device according to Example 2. FIG. It is the figure which removed the 2nd electrode from FIG. It is the figure which removed the organic layer and the insulating layer from FIG.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

FIG. 1 is a plan view showing a configuration of a light emitting device 10 according to the embodiment. FIG. 2 is a cross-sectional view illustrating the configuration of the light emitting element 102. FIG. 3 is a cross-sectional view taken along the line AA for explaining the configuration of the terminal 302. The light emitting device 10 according to the embodiment includes a substrate 100, a light emitting element 102, a terminal 302, and a wiring 300. The light emitting element 102, the wiring 300, and the terminal 302 are formed on the substrate 100. The wiring 300 connects the terminal 302 to the light emitting element 102. The wiring 300 includes a first conductive layer 332, a second conductive layer 334, and a protective layer 340. The second conductive layer 334 is formed on the first conductive layer 332 and is formed of the same material as the first conductive layer 332. The protective layer 340 has conductivity and is formed on part or all of the second conductive layer 334. The terminal 302 includes a first conductive layer 332 and a second conductive layer 334. The first conductive layer 332 and the second conductive layer 334 are formed under different manufacturing conditions. As a result, the composition ratio or density of the first conductive layer 332 and the second conductive layer 334 is different. As will be described below, when an Al alloy is used as the first conductive layer 332 and the second conductive layer 334, by adjusting the composition balance of the relatively hard neodymium to the relatively soft aluminum, the hardness is different from each other. I can make it. Alternatively, the manufacturing conditions can be devised so that the densities of the Al alloys are different, and states with different hardness can be created. The hardness of each layer may be measured by a micro Vickers test or the like.

In addition, the second conductive layer 334 is easier to etch than the first conductive layer 332. In other words, the number of atoms per unit volume of the second conductive layer 334 is smaller than the number of atoms per unit volume of the first conductive layer 332. This number of atoms can be measured, for example, by counting the number of atoms per unit area using a cross-sectional photograph of the wiring 300 using an electron microscope (for example, TEM). It can also be said that the density of the second conductive layer 334 is lower than the density of the first conductive layer 332. The magnitude of these densities can be determined using, for example, XRD (X-ray diffraction) or RBS (Rutherford Backscattering Spectrometry). Details will be described below.

The substrate 100 is a transparent substrate such as a glass substrate or a resin substrate. The substrate 100 may have flexibility. In this case, the thickness of the substrate 100 is, for example, not less than 10 μm and not more than 1000 μm. Also in this case, the substrate 100 may be formed of either an inorganic material or an organic material. The substrate 100 is, for example, a polygon such as a rectangle.

The light emitting element 102 is an organic EL element, for example, and has a configuration in which an organic layer 140 is sandwiched between a first electrode 110 and a second electrode 150 as shown in FIG. The organic layer 140 has a configuration in which a hole transport layer, a light emitting layer, and an electron transport layer are stacked in this order. When the first electrode 110 is an anode, a hole transport layer is formed on the first electrode 110. When the first electrode 110 is a cathode, an electron transport layer is formed on the first electrode 110. Note that a hole injection layer may be provided between the hole transport layer and the light emitting layer, or an electron injection layer may be provided between the electron transport layer and the light emitting layer. Each layer of the organic layer 140 may be formed by a coating method or a vapor deposition method, or a part may be formed by a coating method and the rest may be formed by a vapor deposition method. Note that the organic layer 140 may be formed by an evaporation method using an evaporation material, or may be formed by an inkjet method, a printing method, or a spray method using an application material.

At least one of the first electrode 110 and the second electrode 150 is a translucent electrode. The remaining electrodes are made of a metal such as Al or Ag. The material of the translucent electrode is, for example, a network using an inorganic material such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide), a conductive polymer such as a polythiophene derivative, or a nanowire made of silver or carbon. Electrode. In the example shown in this figure, it is a bottom emission type light emitting element 102, the 1st electrode 110 is a translucent electrode, and the 2nd electrode 150 is an electrode which reflects light, such as Al. . Further, in the case of the top emission type light emitting element 102 having a configuration in which the first electrode 110, the organic layer 140, and the second electrode 150 are stacked on the substrate 100 in this order, the first electrode 110 is It is an electrode that reflects light such as Al, and the second electrode 150 is a translucent electrode. Alternatively, both electrodes (the first electrode 110 and the second electrode 150) may be translucent electrodes to form a translucent light emitting device (dual emission type).

An insulating layer 120 is formed on the substrate 100 in order to partition the light emitting element 102. The insulating layer 120 has an opening 122, and the light emitting element 102 is formed in the opening 122. The insulating layer 120 is a photosensitive resin such as a polyimide-based resin, and is formed in a desired pattern by being exposed and developed. As the insulating layer 120, for example, a positive photosensitive resin is used. The insulating layer 120 may be a resin other than a polyimide resin, for example, an epoxy resin or an acrylic resin.

When the light emitting device 10 is a display, a plurality of openings 122 are formed in the insulating layer 120, and a plurality of light emitting elements 102 are formed using the plurality of openings 122. In the case where the light-emitting device 10 is a lighting device, the insulating layer 120 may have one opening 122 or a plurality of openings 122. In the latter case, a plurality of light emitting elements 102 are formed using the plurality of openings 122.

The terminal 302 and the light emitting element 102 are connected to each other through the wiring 300. A part of the wiring 300 is covered with an insulating layer 120. The wiring 300 is formed of a conductive layer. In the example shown in this figure, the terminal 302 is an end portion of the wiring 300. The wiring 300 and the terminal 302 have a configuration in which a lower layer 320, a first conductive layer 332, a second conductive layer 334, and a protective layer 340 are stacked on the transparent conductive layer 310.

The transparent conductive layer 310 is formed of, for example, the same material (for example, a translucent conductive material) as the electrode located on the substrate 100 side among the two electrodes of the light emitting element 102. The first conductive layer 332 and the second conductive layer 334 are formed of the same material, for example, Al or an Al alloy.

The lower layer 320 and the protective layer 340 are formed of a material harder than the first conductive layer 332 and the second conductive layer 334, for example, Mo or Mo alloy. The resistance of the material constituting the protective layer 340 is greater than the resistance of the material constituting the first conductive layer 332. For example, when the first conductive layer 332 and the second conductive layer 334 are formed of an AlNd alloy, the lower layer 320 and the protective layer 340 are formed of a MoNb alloy.

The protective layer 340 is thinner than the lower layer 320. The thickness of the lower layer 320 is, for example, 40 nm or more and 60 nm or less, and the thickness of the protective layer 340 is, for example, 5 nm or more and 20 nm or less. In addition, the thickness of the second conductive layer 334 is smaller than the thickness of the first conductive layer 332. For example, the thickness of the first conductive layer 332 is 150 nm to 900 nm, and the thickness of the second conductive layer 334 is 80 nm to 200 nm.

The first conductive layer 332 and the second conductive layer 334 are preferably formed continuously in the same vapor deposition apparatus (for example, sputtering apparatus). For example, if the film formation conditions are changed after the first conductive layer 332 reaches a desired thickness, the first conductive layer 332 and the second conductive layer 334 are continuously formed. As described above, the second conductive layer 334 is more easily etched than the first conductive layer 332. In other words, the number of atoms per unit volume of the second conductive layer 334 is smaller than the number of atoms per unit volume of the first conductive layer 332. In order to do this, for example, when the second conductive layer 334 is formed, the input power of the upper electrode of the sputtering apparatus may be lowered (for example, 45% to 55%).

The wiring 300 of the light emitting element 102 often uses ITO as the transparent conductive layer 310, and Al or an Al alloy as the first conductive layer 332 and the second conductive layer 334. In particular, the structure other than the transparent conductive layer 310 in the wiring 300 often adopts a MoNb / AlNd / MoNb laminated structure. The reason for this is as follows.

First, when aluminum and ITO are brought into direct contact, the chemical resistance of ITO is weakened by the electrochemical effect. Moreover, the electrical contact between aluminum and ITO is poor, and the contact resistance between them deteriorates with time. In order to avoid these problems, it is preferable to dissociate direct contact by dissimilar metals such as molybdenum (Mo) and chromium (Cr) between aluminum and ITO. In particular, Mo blocks the reaction between aluminum and ITO and has low contact resistance with both.

Furthermore, many AlNd alloys containing aluminum or neodymium (Nd) in aluminum are easily oxidized. When the material forming the wiring 300 is oxidized, there is a risk that oxygen in the oxide diffuses into aluminum or an AlNd alloy. In order to suppress this phenomenon, a MoNb alloy layer containing a specific amount of niobium (Nb) is formed on the surface of the wiring 300 as a protective film. The protective layer (MoNb) and the AlNd alloy wiring 300 can be collectively etched with an etching solution made of a mixed aqueous solution of phosphoric acid, acetic acid, and nitric acid. In a general light emitting device using an organic EL element, a polyimide film that is a material of the insulating layer 120 is spin-coated, patterned by a photolithography process, and then heat-treated at a temperature of about 320 ° C. Create By this heat treatment, the resistance of the AlNd alloy of the wiring 300 can be lowered. The reason is considered that Nd moves to the grain boundary of Al by the heat of heat treatment.

The first conductive layer 332 and the second conductive layer 334 have different composition ratios or densities. For example, the manufacturing conditions of the first conductive layer 332 and the second conductive layer 334 are set so that the composition ratio of aluminum and neodymium is different from each other. For example, the composition ratio (Nd / Al) of aluminum and neodymium in the second conductive layer 334 is smaller than that in the first conductive layer 332. That is, the first conductive layer 332 has a layer structure harder than the second conductive layer 334 by adjusting the composition balance of neodymium harder than aluminum. In this case, as an example of adjusting the manufacturing conditions, the composition ratio (Nd / Al) of the target aluminum and neodymium when sputtering film formation is adjusted. On the other hand, the manufacturing conditions may be set so that the densities of the aluminum alloys of the first conductive layer 332 and the second conductive layer 334 are different. In this case, the voltages on the target side during sputtering film formation are made different from each other. For example, when the second conductive layer 334 is formed, the density of the aluminum alloy is reduced by lowering the voltage on the target side than when the first conductive layer 332 is formed. In other words, the number of aluminum atoms per unit volume of the second conductive layer 334 is smaller than the number of aluminum atoms per unit volume of the first conductive layer 332.

FIG. 4 is an enlarged view of a portion surrounded by a dotted line in FIG. As described above, the terminal 302 has a structure in which the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are stacked. The second conductive layer 334 is more easily etched than the first conductive layer 332. Therefore, the second conductive layer 334 is located closer to the center side of the terminal 302 than the first conductive layer 332 on the end surface of the terminal 302. Accordingly, the protective layer 340 is also located closer to the center of the terminal 302 than the first conductive layer 332.

FIG. 5 is a cross-sectional view for explaining a structure in which the terminal 302 is connected to the conductive member 400 using the anisotropic conductive resin 500. The conductive member 400 is, for example, a lead terminal. A plurality of conductive particles 520 are introduced into the anisotropic conductive resin 500, and the terminal 302 is electrically connected to the conductive member 400 through the conductive particles 520. The conductive particles 520 are, for example, metal particles. The conductive particles 520 are pressed against the terminal 302 by the conductive member 400. Here, the second conductive layer 334 is softer than the first conductive layer 332 and thus has a lower atom number density. Therefore, when the conductive particles 520 are pressed against the terminals 302, the second conductive layer 334 is deformed, and thus the protective layer 340 is easily cracked. Accordingly, the conductive particles 520 are likely to contact the second conductive layer 334 (or the first conductive layer 332).

Next, a method for manufacturing the light emitting device 10 will be described. First, a conductive layer to be the first electrode 110 is formed on the substrate 100. Next, the conductive layer is selectively removed using etching (for example, dry etching or wet etching). As a result, the first electrode 110 and the transparent conductive layer 310 of the wiring 300 are formed on the substrate 100.

Next, on the substrate 100 and the transparent conductive layer 310, a conductive layer to be the lower layer 320, a conductive layer to be the first conductive layer 332, a conductive layer to be the second conductive layer 334, and a conductive layer to be the protective layer 340 are formed. Form in order. Each of these layers is formed using, for example, a sputtering method or a vapor deposition method. Next, a resist pattern is formed on these conductive layers, and etching (for example, wet etching) is performed using this resist pattern as a mask. As a result, the lower layer 320, the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are formed on the transparent conductive layer 310. In this way, the wiring 300 and the terminal 302 are formed.

Next, an insulating layer is formed on the substrate 100, the first electrode 110, and the wiring 300, and this insulating layer is selectively removed using a chemical solution (for example, a developer). Thereby, the insulating layer 120 and the opening 122 are formed. In the case where the insulating layer 120 is formed of an insulating layer, the insulating layer 120 and the opening 122 are formed by an exposure process and a development process. In the case where the insulating layer 120 is formed of polyimide, the insulating layer 120 is further subjected to heat treatment. Thereby, imidation of the insulating layer 120 proceeds.

Next, the organic layer 140 is formed in the opening 122. As for the organic layer 140, all the layers may be formed by the apply | coating method, all the layers may be formed by the vapor deposition method, one part may be formed by the apply | coating method and the remainder may be formed by the vapor deposition method. At least one layer (for example, a hole transport layer) constituting the organic layer 140 may be formed using a coating method such as spray coating, dispenser coating, ink jetting, or printing. The remaining layers of the organic layer 140 are formed using, for example, a vapor deposition method, but these layers may also be formed using a coating method.

Next, the second electrode 150 is formed on the organic layer 140 by using, for example, a vapor deposition method or a sputtering method.

As described above, according to the present embodiment, the terminal 302 has a structure in which the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are stacked in this order. Since the second conductive layer 334 is formed under manufacturing conditions different from those of the first conductive layer 332, the second conductive layer 334 can be more easily deformed than the first conductive layer 332. For this reason, when the connection member such as the conductive particles 520 of the anisotropic conductive resin 500 is pressed against the terminal 302, the second conductive layer 334 is deformed and the protective layer 340 is easily broken. Accordingly, the first conductive layer 332 can easily come into contact with a connection member such as the conductive particles 520, and the connection resistance between the terminal 302 and the conductive particles 520 can be reduced.

(Modification)
FIG. 6 is a plan view of a light emitting device 10 according to a modification, and corresponds to FIG. 1 in the embodiment. The light emitting device 10 according to the present modification has the same configuration as that of the light emitting device 10 according to the embodiment, except that the protective layer 340 of the wiring 300 is removed except for a portion covered with the insulating layer 120. It is. The protective layer 340 is removed by, for example, an etching solution when etching the insulating layer 120.

In this modification, the second conductive layer 334 may also be removed from a portion of the wiring 300 that is not covered with the insulating layer 120.

Also in this modified example, since the protective layer 340 is removed from the terminal 302, the first conductive layer 332 can easily come into contact with a connection member such as the conductive particles 520. Therefore, the connection resistance between the terminal 302 and the conductive particles 520 can be reduced.

Example 1
FIG. 7 is a plan view of the light emitting device 10 according to the first embodiment. FIG. 8 is a view in which the sealing member 200, the partition 170, the second electrode 150, the organic layer 140, and the insulating layer 120 are removed from FIG. 9 is a sectional view taken along the line BB in FIG. 7, FIG. 10 is a sectional view taken along the line CC in FIG. 7, and FIG. 11 is a sectional view taken along the line DD in FIG. The light emitting device 10 shown in this figure is used as a display, for example.

The light emitting device 10 includes a substrate 100, a first electrode 110, a light emitting element 102, an insulating layer 120, a plurality of openings 122, a plurality of openings 124, a plurality of lead wires 130, a plurality of first terminals 136, an organic layer 140, a second layer. The electrode 150, the plurality of lead wires 160, the plurality of second terminals 166, and the plurality of partition walls 170 are provided. The first terminal 136 and the second terminal 166 correspond to the terminal 302 in the embodiment, and the lead wirings 130 and 160 correspond to the wiring 300 in the embodiment or the modification.

The first electrode 110 is formed on the first surface side of the substrate 100 and extends in a line shape in the first direction (Y direction in FIG. 7). The first electrode 110 is the translucent electrode shown in the embodiment. The first electrode 110 may be a metal thin film that is thin enough to transmit light. The end of the first electrode 110 is connected to the lead wiring 130.

The lead wiring 130 is a wiring that connects the first electrode 110 to the first terminal 136. In the example shown in the drawing, one end side of the lead wiring 130 is connected to the first electrode 110, and the other end side of the lead wiring 130 is a first terminal 136. The lead wiring 130 is an example of the wiring 300 in the embodiment, and has a configuration in which a lower layer 320, a first conductive layer 332, a second conductive layer 334, and a protective layer 340 are stacked on the transparent conductive layer 310. . The transparent conductive layer 310 is integrated with the first electrode 110.

As shown in FIGS. 7 and 9 to 11, the insulating layer 120 is formed on the plurality of first electrodes 110 and in a region therebetween. A plurality of openings 122 and a plurality of openings 124 are formed in the insulating layer 120. As will be described in detail later, the plurality of second electrodes 150 extend in parallel to each other in a direction intersecting with the first electrode 110 (for example, an orthogonal direction: an X direction in FIG. 7). A partition wall 170, which will be described in detail later, extends between the plurality of second electrodes 150. The opening 122 is located at the intersection of the first electrode 110 and the second electrode 150 in plan view. The plurality of openings 122 are provided at predetermined intervals. The plurality of openings 122 are aligned in the direction in which the first electrode 110 extends (Y direction in FIG. 7). The plurality of openings 122 are also arranged in the extending direction of the second electrode 150 (X direction in FIG. 7). For this reason, the plurality of openings 122 are arranged to form a matrix.

The opening 124 is located on one end side of each of the plurality of second electrodes 150 in plan view. The openings 124 are arranged along one side of the matrix formed by the openings 122. When viewed in a direction along this one side (for example, the Y direction in FIG. 7, that is, the direction along the first electrode 110), the openings 124 are arranged at a predetermined interval. A part of the lead wiring 160 is exposed from the opening 124. The lead wiring 160 is connected to the second electrode 150 through the opening 124. In other words, the plurality of lead wires 160 are connected to different light emitting elements 102.

The lead wiring 160 is a wiring that connects the second electrode 150 to the second terminal 166. One end side of the lead wiring 160 is located below the opening 124, and the other end side of the lead wiring 160 is led out of the insulating layer 120. In the example shown in the drawing, the other end side of the lead-out wiring 160 is the second terminal 166. The lead-out wiring 160 is an example of the wiring 300 in the embodiment, and the second terminal 166 is an example of the terminal 302 in the embodiment. The lead wiring 160 has a configuration in which a lower layer 320, a first conductive layer 332, a second conductive layer 334, and a protective layer 340 are stacked on the transparent conductive layer 310. This transparent conductive layer 310 is also formed of the same material as the first electrode 110.

In the example shown in the drawing, the edge of the protective layer 340 in the lead-out wiring 130 has a plurality of irregularities in plan view. In other words, the edge of the protective layer 340 of the lead-out wiring 130 has a large unevenness compared with the edge of the protective layer 340 of the lead-out wiring 160 in plan view. This is because when the lower layer 320, the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are formed by wet etching, the extraction wiring 130 is connected to the first electrode 110. This is thought to be due to the difference between the two.

In the region overlapping with the opening 122, an organic layer 140 is formed. The hole transport layer of the organic layer 140 is in contact with the first electrode 110, and the electron transport layer of the organic layer 140 is in contact with the second electrode 150. In this way, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150.

In the example shown in FIGS. 9 and 10, each layer constituting the organic layer 140 is shown to protrude beyond the opening 122. As shown in FIG. 10, each layer constituting the organic layer 140 may be continuously formed between adjacent openings 122 in the direction in which the partition 170 extends, or may be formed continuously. It does not have to be. However, as shown in FIG. 11, the organic layer 140 is not formed in the opening 124.

As described above, the organic layer 140 is sandwiched between the first electrode 110 and the second electrode 150. As shown in FIGS. 7 and 9 to 11, the second electrode 150 is formed above the organic layer 140 and extends in a second direction (X direction in FIG. 7) intersecting the first direction. The second electrode 150 is electrically connected to the organic layer 140. For example, the second electrode 150 may be formed on the organic layer 140 or may be formed on a conductive layer formed on the organic layer 140. The light emitting device 10 includes a plurality of second electrodes 150 that are parallel to each other. One second electrode 150 is formed in a direction passing over the plurality of openings 122.

A partition wall 170 is formed between the adjacent second electrodes 150. The partition wall 170 extends in parallel with the second electrode 150, that is, in the second direction. The base of the partition wall 170 is, for example, the insulating layer 120. The partition 170 is, for example, a photosensitive resin such as a polyimide resin, and is formed in a desired pattern by being exposed and developed. The partition wall 170 is formed using, for example, a negative photosensitive resin. The partition wall 170 may be made of a resin other than a polyimide resin, for example, an inorganic material such as an epoxy resin, an acrylic resin, or silicon dioxide.

The partition wall 170 has a trapezoidal cross-sectional shape (reverse trapezoid). That is, the width of the upper surface of the partition wall 170 is larger than the width of the lower surface of the partition wall 170. Therefore, if the partition wall 170 is formed before the second electrode 150, the second electrode 150 is formed on one surface side of the substrate 100 by using a vapor deposition method or a sputtering method, whereby the plurality of second electrodes 150 are formed. Can be formed collectively.

Further, the partition wall 170 has a function of dividing the organic layer 140.

In addition, the light emitting device 10 includes a sealing member 200. The sealing member 200 seals the plurality of light emitting elements 102 and has a shape in which the entire circumference of the edge of a polygonal metal foil or metal plate (for example, an Al foil or an Al plate) similar to the substrate 100 is pushed down. Have. The edge is fixed to the substrate 100 with an adhesive 202 (or adhesive). However, the sealing member 200 may be formed of glass.

Next, a method for manufacturing the light emitting device 10 in this embodiment will be described. First, the first electrode 110 and the

lead wires

130 and 160 are formed on the substrate 100. These forming methods are the same as those in the embodiment.

Next, the insulating layer 120 is formed. The method for forming the insulating layer 120 is the same as in the embodiment. In this step, a plurality of openings 122 and a plurality of openings 124 are formed. Next, a partition wall 170 is formed over the insulating layer 120. The partition 170 is formed by a method similar to that of the insulating layer 120, for example. Further, the organic layer 140 and the second electrode 150 are formed. These forming methods are the same as those in the embodiment.

Also in this embodiment, the first terminal 136 and the second terminal 166 have a structure in which the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are stacked in this order. Therefore, when the connecting member such as the conductive particles 520 of the anisotropic conductive resin 500 is pressed against the first terminal 136 (or the second terminal 166), the second conductive layer 334 is deformed and the protective layer 340 is cracked. It becomes easy. Accordingly, the first conductive layer 332 can easily come into contact with a connection member such as the conductive particles 520, and the connection resistance between the first terminal 136 (or the second terminal 166) and the conductive particles 520 can be reduced.

(Example 2)
FIG. 12 is a plan view illustrating the configuration of the light emitting device 10 according to the second embodiment. FIG. 13 is a view in which the second electrode 150 is removed from FIG. FIG. 14 is a diagram in which the organic layer 140 and the insulating layer 120 are removed from FIG. The light emitting device 10 shown in this figure is a lighting device. Therefore, the light emitting element 102 is formed in a region excluding the edge of the substrate 100. In these drawings, the sealing member 200 is omitted.

Specifically, the first electrode 110 is formed on almost the entire surface of the substrate 100. The insulating layer 120 covers the edge of the first electrode 110. The insulating layer 120 prevents the first electrode 110 and the second electrode 150 from being short-circuited at the edge of the first electrode 110. The organic layer 140 is formed in a region surrounded by the insulating layer 120 in the first electrode 110. In other words, the insulating layer 120 defines a light emitting region of the light emitting element 102.

A plurality of auxiliary electrodes 112 are formed on the first electrode 110. The auxiliary electrode 112 extends in the first direction (vertical direction in FIG. 14), and has a configuration in which the lower layer 320, the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are stacked in this order. is doing. For this reason, the area | region in which the auxiliary electrode 112 is formed among the 1st electrodes 110 has the layer structure similar to the

extraction wiring

130 and 160 in Example 1. FIG. By providing the auxiliary electrode 112, the apparent resistance of the first electrode 110 can be lowered.

The first terminal 136 has a layer structure similar to that of the

lead wires

130 and 160 in the first embodiment. In other words, the first terminal 136 has a configuration in which the lower layer 320, the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are stacked in this order on the same layer as the first electrode 110. . Note that the second terminal 166 also has the same layer structure as the first terminal 136.

Also in this embodiment, the first terminal 136 and the second terminal 166 have a structure in which the first conductive layer 332, the second conductive layer 334, and the protective layer 340 are stacked in this order. For this reason, as in the first embodiment, the first conductive layer 332 is easily brought into contact with a connection member such as the conductive particles 520, and the connection resistance between the first terminal 136 (or the second terminal 166) and the conductive particles 520 is reduced. be able to.

As mentioned above, although embodiment and the Example were described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

This application claims priority based on Japanese Patent Application No. 2014-058630 filed on March 20, 2014, the entire disclosure of which is incorporated herein.

10 light emitting device 100 substrate 102 light emitting element 110 first electrode 120 insulating layer 122 opening 124 opening 130 lead wire 136 first terminal 160 lead wire 166 second terminal 300 wire 302 terminal 310 transparent conductive layer 320 lower layer 332 first conductive layer 334 first 2 conductive layer 340 protective layer

Claims

A substrate,
A light emitting device formed on the substrate;
Terminals formed on the substrate;
With
The terminal is
A first conductive layer;
A second conductive layer located on the first conductive layer and made of the same material as the first conductive layer;
Have
The first conductive layer and the second conductive layer are light emitting devices having different hardnesses.
The light-emitting device according to claim 1.
The first conductive layer and the second conductive layer are light emitting devices having different composition ratios or densities.
The light-emitting device according to claim 2.
The light emitting device in which the second conductive layer is more easily etched than the first conductive layer.
The light-emitting device according to claim 2.
In the cross section in the thickness direction, the number of atoms per unit area of the second conductive layer is less than the number of atoms per unit area of the first conductive layer.
The light-emitting device according to claim 3 or 4,
The light emitting device in which the second conductive layer is thinner than the first conductive layer.
The light emitting device according to claim 5.
The light emitting device, wherein the terminal includes a conductive protective layer formed on the second conductive layer.
The light-emitting device according to claim 6.
The first conductive layer and the second conductive layer are Al or an Al alloy layer,
The light emitting device, wherein the protective layer is a Mo or Mo alloy layer.
The light-emitting device according to claim 7.
The first conductive layer and the second conductive layer are continuously formed by sputtering, and the input power when forming the second conductive layer is the first conductive layer. Light-emitting device that is smaller than the input power when