WO2015130055A2 - Boîtier de diode électroluminescente - Google Patents

Boîtier de diode électroluminescente Download PDF

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Publication number
WO2015130055A2
WO2015130055A2 PCT/KR2015/001715 KR2015001715W WO2015130055A2 WO 2015130055 A2 WO2015130055 A2 WO 2015130055A2 KR 2015001715 W KR2015001715 W KR 2015001715W WO 2015130055 A2 WO2015130055 A2 WO 2015130055A2
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WO
WIPO (PCT)
Prior art keywords
phosphor
emitting diode
light emitting
light
diode chip
Prior art date
Application number
PCT/KR2015/001715
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English (en)
Korean (ko)
Other versions
WO2015130055A3 (fr
Inventor
오광용
변호준
최혁중
남기범
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140046707A external-priority patent/KR102191211B1/ko
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to US15/122,050 priority Critical patent/US9735322B2/en
Publication of WO2015130055A2 publication Critical patent/WO2015130055A2/fr
Publication of WO2015130055A3 publication Critical patent/WO2015130055A3/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the present invention relates to a light emitting diode package. More specifically, the present invention relates to a light emitting diode package including a high strength molding.
  • a light emitting diode (LED) package is a compound semiconductor having a p-n junction structure of a semiconductor and refers to a device that emits predetermined light by recombination of minority carriers (electrons or holes).
  • the LED package consumes less power, has a long life, and can be miniaturized.
  • the light emitting diode package may implement white light using a phosphor that is a wavelength conversion means. That is, the phosphor may be disposed on the LED chip to implement white light through a mixture of a part of the primary light of the LED chip and the secondary light wavelength-converted by the phosphor.
  • White light-emitting diode packages of this structure are widely used because of their low cost, and in principle, structurally simple.
  • white light may be obtained by coating a phosphor emitting yellow green or yellow by absorbing a part of blue light as excitation light on a blue light emitting diode chip.
  • a part of the light is attached to a yellow-green to yellow light-emitting phosphor as an excitation source on the light-emitting diode chip emitting blue light, and thus the blue light of the light-emitting diode and the yellow-green to yellow light-emitting of the phosphor. Accordingly, a light emitting diode emitting white light is disclosed.
  • the white light emitting diode package using this method utilizes the light emission of the yellow phosphor, and thus the color rendering is low due to the spectral deficiency of the green and red regions of the emitted light.
  • the white light emitting diode package using this method utilizes the light emission of the yellow phosphor, and thus the color rendering is low due to the spectral deficiency of the green and red regions of the emitted light.
  • a light emitting diode is manufactured by using a blue light emitting diode chip and phosphors emitting green and red light as excitation light. That is, white light having a high color rendering property can be spherical through a mixture of green light and red light excited by blue light and blue light.
  • white light emitting diode is used as the backlight unit, since the match with the color filter is very high, an image closer to natural colors can be realized.
  • the light emitted through the excitation of the phosphor has a full width at half maximum, compared to the light emitting diode chip.
  • a nitride phosphor a method of manufacturing the same, and a light emitting device are disclosed. Examining the emission spectrum of the light emitting device including the nitride phosphor, it can be seen that it has a wide half width in the red region.
  • the problem to be solved by the present invention is to provide a light emitting diode package with improved reliability.
  • Another object of the present invention is to provide a light emitting diode package with improved moisture resistance.
  • Another object of the present invention is to provide a light emitting diode package that blocks the contact between the phosphor and the moisture.
  • Another problem to be solved by the present invention is to provide a light emitting diode package in which the light retention rate lasts for a long time.
  • Another object of the present invention is to provide a light emitting diode package including a phosphor having improved emission intensity.
  • Another object of the present invention is to provide a light emitting diode package with improved color reproducibility.
  • Another object of the present invention is to provide a light emitting diode package including a phosphor emitting green light and / or red light having a narrow half width.
  • Another object of the present invention is to provide a light emitting diode package including a phosphor having improved moisture resistance, including a coating layer.
  • Another object of the present invention is to provide a light emitting diode package comprising a phosphor coated to have a hydrophobicity on the surface.
  • a light emitting diode package includes a housing; At least one light emitting diode chip disposed in the housing; A molding part covering the at least one light emitting diode chip; A first phosphor that is excited by the at least one LED chip and emits green light; And a second phosphor which is excited by the at least one light emitting diode chip to emit red light, wherein the molding part has an oxygen gas permeability of 140 cc / m 2 / day or less, and the second phosphor has a half width of 20 nm or less. It can emit red light having.
  • the molding part may have an oxygen gas permeability of 100 to 140 cc / m 2 / day.
  • the second phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. have.
  • the first phosphor may be at least one of a BAM-based phosphor and a quantum dot phosphor.
  • the peak wavelength of the green light of the first phosphor may be located within the range of 520 to 570 nm, and the peak wavelength of the red light of the second phosphor may be located within the range of 610 to 650 nm.
  • the molding part may include at least one of silicon, epoxy, PMMA, PE, and PS.
  • the LED package according to another embodiment of the present invention further includes a buffer unit disposed between the molding unit and the at least one LED chip, wherein the buffer unit may have a higher oxygen transmittance than the molding unit.
  • the second phosphor may have a diameter of 25 to 40 ⁇ m.
  • the at least one light emitting diode chip may include at least one of a blue light emitting diode chip and an ultraviolet light emitting diode chip.
  • the housing may include a reflector reflecting light emitted from the at least one LED chip.
  • the housing may further include a barrier reflector covering the reflector.
  • the molding part may include a first molding part covering the at least one light emitting diode chip; And a second molding part covering the first molding part, wherein the first molding part contains the second phosphor, and the second molding part may contain the first.
  • the apparatus may further include a phosphor plate disposed on the molding unit, and the phosphor plate may contain the first and second phosphors.
  • white light having a color saturation of NTSC (national television system committee) of 90% or more may be emitted.
  • the method may further include a coating layer formed on a surface of at least one of the first phosphor and the second phosphor. As a result, contact between the first and second phosphors and water may be prevented.
  • the coating layer may include a silane-based coating material. Since the silane-based coating material is hydrophobic, the surface of the first and second phosphors can be prevented from binding to moisture.
  • the silane-based coating material may be halogenated silane or methylated silane.
  • the halogenated silane may be fluorine silane.
  • a light emitting diode package includes: a housing; A light emitting diode chip disposed in the housing; At least one phosphor is excited by the light emitting diode chip, and the phosphor may emit red light having a diameter of 25 ⁇ m or more and a half width of 20 nm or less.
  • the phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. have.
  • the phosphor may have a diameter of 25 to 40 ⁇ m.
  • a light emitting diode package includes: a housing; A light emitting diode chip disposed in the housing; At least one phosphor excited by the light emitting diode chip; And a coating layer surrounding the phosphor, wherein the coating layer may be a silane-based coating material.
  • the silane-based coating material may include methylated silane or halogenated silane.
  • the coating layer may be a halogenated silane coated on the surface of the first phosphor and the second phosphor.
  • the LED package according to the present invention can block the contact between the phosphor distributed in the molding part and external moisture, thereby improving the reliability of the phosphor.
  • the light retention of the LED package can be maintained for a long time.
  • the phosphor included in the LED package according to the present invention may emit green light and / or red light having a narrow half width, the color reproducibility of the LED package may be improved. Also. Through the diameter of the phosphor, the light emission intensity can be improved.
  • the phosphor included in the LED package according to the present invention may be coated with a coating layer comprising a halogenated silane, thereby preventing contact of the phosphor with moisture. Reliability can be improved.
  • FIG. 1 is a cross-sectional view showing a light emitting diode package according to an embodiment of the present invention.
  • FIG. 2 is a graph showing the magnitude of the light emission intensity according to the diameter of the second phosphor included in the LED package according to the embodiment of the present invention.
  • FIG 3 is a graph illustrating a change in light retention rate with time of a molding part included in a light emitting diode package according to an exemplary embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 8 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • a light emitting diode package includes a housing 101, a light emitting diode chip 102, a first phosphor 105, a second phosphor 106, and a molding part 104.
  • the light emitting diode chip 102, the first phosphor 105, the second phosphor 106, and the molding part 104 may be disposed on the housing 101.
  • the light emitting diode chip 102 may be disposed on the bottom surface of the housing 101.
  • Leading terminals (not shown) for inputting power to the light emitting diode chip 102 may be installed in the housing 101.
  • the molding part 104 may include the first and second phosphors 105 and 106 and cover the light emitting diode chip 102.
  • the housing 101 may be formed of a common plastic (polymer) or ABS (acrylonitrile butadiene styrene), liquid crystalline polymer (LCP), polyamide (PA), polyphenylene sulfide (IPS), thermoplastic elastomer (TPE), or the like. It may be formed of a ceramic.
  • the housing 101 may be formed of ceramic.
  • the housing 101 including the ceramic may not be discolored or deteriorated by ultraviolet light emitted from the ultraviolet light emitting diode chip, thereby maintaining the reliability of the LED package.
  • the housing 101 When the housing 101 is metal, the housing 101 may include two or more metal frames, and the metal frames may be insulated from each other. Through the housing 101 including the metal, it is possible to improve the heat dissipation capability of the LED package. Although the materials capable of forming the housing 101 have been mentioned above, the housing 101 may be formed of various materials without being limited thereto.
  • the housing 101 may include an inclined inner wall for reflecting light emitted from the light emitting diode chip 102.
  • the molding part 104 may be formed of a material having a high hardness. Specifically, when the hardness of the molding part 104 is measured by Shore hardness, the measured value is 69 to 71, and the indexer type may be a D type. When the hardness of the molding part 104 is measured by oxygen gas permeability, the oxygen gas permeability may be 100 to 140 cc / m 2 / day.
  • the molding part 104 may be formed of a material including at least one of silicon, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS) to have high hardness.
  • the molding part 104 may be formed through an injection process using a mixture of the above-described material and the first and second phosphors 105 and 106. In addition, after the production using a separate mold, it may be formed by pressing or heat treatment molding portion 104.
  • the molding part 104 may be formed in various shapes such as a convex lens shape, a flat plate shape (not shown), and a shape having predetermined irregularities on the surface thereof.
  • the LED package according to the present invention discloses a molding part 104 having a convex lens shape, the shape of the molding part 104 is not limited thereto.
  • the light emitting diode chip 102 may be an ultraviolet light emitting diode chip or a blue light emitting diode chip.
  • the peak wavelength of the emitted light may be in the range of 410 to 490 nm.
  • the full width at half maximum (FWHM) of the peak wavelength of the blue light emitted from the light emitting diode chip 102 may be 40 nm or less.
  • the light emitting diode package according to the present invention has been disclosed in which one light emitting diode chip 102 is disposed, but the number and arrangement of light emitting diode chips 102 are not limited thereto.
  • the first phosphor 105 may be excited by the light emitting diode chip 102 to emit green light.
  • the second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light.
  • the peak wavelength of the green light emitted by the first phosphor 105 may be in the range of 520 to 570 nm.
  • the first phosphor 105 may emit green light having a half width of less than 35 nm.
  • the first phosphor 105 may include at least one phosphor selected from BAM (Ba-Al-Mg) -based phosphors, quantum dot phosphors, and fluoride-based phosphors.
  • the fluoride-based phosphor may be a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ .
  • A may be one of Li, Na, K, Rb, Ce, and NH 4
  • M may be one of Si, Nb, and Ta.
  • the half width of the green light is narrower, green light having high color purity can be realized.
  • the full width at half maximum is 35 nm or more, since the color purity of light to be emitted is low, it is difficult to reproduce more than 90% of the full color reproduction range defined by the NTSC (National Television System Committee) standard adopted as a broadcasting method of color television. . Therefore, in order to implement NTSC color saturation of 90% or more of the white light emitted by the light emitting device according to the present invention, the first phosphor emits green light having a half width of 35 nm or less.
  • the second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light.
  • the peak wavelength of the red light emitted by the second phosphor 106 may be located within a range of 610 to 650 nm.
  • the second phosphor 106 may include at least one phosphor selected from a quantum dot phosphor, a sulfide phosphor, and a fluoride phosphor.
  • the fluoride series phosphor may be a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ .
  • A may be one of Li, Na, K, Rb, Ce, and NH 4
  • M may be one of Si, Nb, and Ta.
  • the second phosphor 106 may emit red light having a narrow half width. Specifically, red light having a half width of 30 to 40 nm for a quantum dot phosphor, a half width of 65 nm or less for a sulfide-based phosphor, and a half width of 20 nm or less for a fluoride-based phosphor can be emitted. That is, when the second phosphor 106 is a fluoride series phosphor, red light having the narrowest half width can be emitted.
  • FIG. 2 is a graph showing the magnitude of the light emission intensity according to the diameter of the second phosphor included in the LED package according to the embodiment of the present invention.
  • the second phosphor is a fluoride-based phosphor
  • a line represents a case where the diameter of the phosphor is 30 ⁇ m
  • a line b represents a case where the diameter of the phosphor is 20 ⁇ m.
  • the emission intensity is improved by about 16% when the diameter of the phosphor is 30 ⁇ m, compared with the case of 20 ⁇ m.
  • the diameters of 20 ⁇ m, 25 ⁇ m, or 30 ⁇ m, respectively were combined with the second phosphors and the green phosphors, which are fluoride-based phosphors.
  • the amount of white light is improved to 102.30% when the second phosphor having a diameter of 25 ⁇ m is combined with the green phosphor.
  • the amount of white light increased to 103.00%.
  • the diameter thereof when the second phosphor according to the present invention is a fluoride series phosphor, the diameter thereof may be 25 ⁇ m or more. Also, the diameter may be 25 ⁇ m to 40 ⁇ m (based on D50). Within the diameter range of the phosphor, the second phosphor may exhibit excellent emission intensity, and the light emitting device including the second phosphor may improve the amount of white light.
  • the first and second phosphors 105 and 106 are preferably uniformly distributed in the molding part 104, whereby the green and second phosphors are excited and emitted by the first phosphor 105.
  • the red light emitted by the 106 and the blue light emitted by the blue light emitting diode 103 may be uniformly mixed to realize more uniform white light.
  • the first and second phosphors 105 and 106 may be disposed adjacent to or spaced apart from the light emitting diode chip 102. When the first and second phosphors 105 and 106 are spaced apart from each other, deterioration due to the LED chip 102 may be prevented.
  • FIG 3 is a graph illustrating a change in light retention rate with time of a molding part included in a light emitting diode package according to an exemplary embodiment of the present invention.
  • line a indicates oxygen gas permeability of 130 cc / m 2 / day
  • line b indicates oxygen gas permeability of 260 cc / m 2 / day
  • line c indicates oxygen gas permeability of 520 cc / m. 2 / day.
  • the LED package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, and a buffer unit 109.
  • the light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the buffer unit 109, and thus a redundant description thereof is omitted.
  • the buffer unit 109 may be disposed between the LED chip 102 and the molding unit 104.
  • the buffer part may be formed of a material including at least one of silicone, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS).
  • PMMA polymethyl methacrylate
  • PE polyethylene
  • PS polystyrene
  • the hardness of the buffer unit 109 is measured by Shore hardness, the measured value is 59 to 61, and the indexer type may be A type. That is, the hardness of the buffer unit 109 may be smaller than the molding unit 104. Accordingly, the oxygen gas permeability of the buffer unit 109 may be greater than that of the molding unit 104.
  • the buffer unit 109 has been disclosed in the case where the light emitting diode chip 102 is disposed around the buffer unit 109, the buffer unit 109 is disposed in a wide area so as to be in contact with both the left and right walls of the housing 101. It may be arranged.
  • the light emitting diode package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, a reflector 111, and a barrier reflector ( 112).
  • the LED package according to the present exemplary embodiment is generally similar to the LED package according to the exemplary embodiment except for the reflector 111 and the barrier reflector 112, and thus, a redundant description thereof will be omitted.
  • the reflector 111 may be spaced apart from the light emitting diode chip 102 and disposed on a side surface thereof.
  • the reflector 111 may increase light emission efficiency by maximizing reflection of light emitted from the light emitting diode chip 102 and the first and second phosphors 105 and 106.
  • the reflector 111 may be formed of any one of a reflective coating film and a reflective coating material layer.
  • the reflector 111 may be formed of at least one of an inorganic material, an organic material, a metal material, and a metal oxide material having excellent heat resistance and light resistance.
  • the reflector 111 may include a metal or a metal oxide having high reflectance such as aluminum (Al), silver (Ag), gold (Au), titanium dioxide (TiO 2 ), or the like.
  • the reflector 111 may be formed by depositing or coating a metal or metal oxide on the housing 101, or may be formed by printing a metal ink.
  • the reflector 111 may be formed by adhering a reflective film or a reflective sheet on the housing 101.
  • the barrier reflector 112 may cover the reflector 111.
  • the barrier reflector 112 may prevent deterioration of the reflector 111 due to heat emitted from the light emitting diode chip 102.
  • the barrier reflector 112 may be formed of an inorganic material or a metal material having high light resistance and high reflectance.
  • the light emitting device includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, and a second phosphor 106.
  • the apparatus may further include a first molding part 104b and a second molding part 104a.
  • the light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the first molding part 104b and the second molding part 104a, and thus a redundant description thereof will be omitted.
  • the first molding part 104b may cover the light emitting diode chip 102.
  • the second molding part 104a may cover the first molding part 104b.
  • the first molding part 104b may be formed of a material having the same hardness as the second molding part 104a or may be formed of a material having a different hardness.
  • the hardness of the first molding part 104b may be lower than that of the second molding part 104a.
  • thermal stress due to the light emitting diode chip 102 may be alleviated. can do.
  • the first molding part 104b may contain a second phosphor 106 that emits red light.
  • the second molding part 104a may contain the first phosphor 105 that emits green light.
  • the phosphors emitting long wavelengths may be disposed below and the phosphors emitting short wavelengths may be disposed above to prevent the green light emitted from the first phosphor 105 from being absorbed and lost by the second phosphor 106 again. .
  • the light emitting diode package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, and a phosphor plate 118. .
  • the light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the phosphor plate 118, and thus, description thereof will not be repeated.
  • the phosphor plate 118 is spaced apart from the light emitting diode chip 102 and disposed on the molding part 104, and may include first and second phosphors 105 and 106.
  • the phosphor plate 118 may be formed of the same material as the molding part 104 or a material having a high hardness.
  • first and second phosphors 105 and 106 are spaced apart from the light emitting diode chip 102, damage caused by heat or light of the first and second phosphors 105 and 106 and the phosphor plate 118 is caused. Can be reduced. Therefore, the reliability of the first and second phosphors 105 and 106 can be improved.
  • An empty space may be formed between the phosphor plate 118 and the light emitting diode chip 102 instead of the molding part 104.
  • the LED package includes a housing 101, a light emitting diode chip 102, a first coating phosphor 107, a second coating phosphor 108, and a molding part 104.
  • the first coating phosphor 107 includes a first phosphor 105 and a coating layer 105a.
  • the light emitting diode package according to the present exemplary embodiment is substantially similar to the light emitting diode package according to the exemplary embodiment except for the first coating phosphor 107 and the second coating phosphor 108, and thus, a redundant description thereof will be omitted.
  • the first coating phosphor 107 may include a first phosphor 105 and a coating layer 105a surrounding the first phosphor 105.
  • the second coaching phosphor 108 may also include a second phosphor 106 and a coating layer 105a surrounding the second phosphor 106.
  • the coating layer 105a may be disposed on the surfaces of the first and second phosphors 105 and 106 to block contact with moisture.
  • the coating layer 105a may combine with the surfaces of the first and second phosphors 105 and 106 to render the surfaces of the first and second coating phosphors 107 and 108 hydrophobic.
  • the coating layer 105a may include a silane-based coating material.
  • the silane-based coating material may be methylated silane or halogenated silane.
  • Methylated silanes are silicone containing compounds in which some groups of silanes are substituted with methyl groups.
  • the halogenated silane may comprise one of fluorine (F), chlorine (Cl), bromine (Br) and iodine (I).
  • the halogenated silane may be a fluorine silane including fluorine (F).
  • Fluorine silane is a silicon-containing compound containing a hydrocarbyl group substituted with at least one fluorine atom and a reactive hydrocarbyloxy group capable of displacement by nucleophilic atoms.
  • Hydrocarbyl groups are linear, branched, cyclic groups containing carbon and hydrogen such as alkanes, alkenes, alkynes, and aryl groups. Hydrocarbyl groups include halogen group, cyano group, keto group, ester group, hydroxyl group, carboxyl group, oxygen, sulfur ) And nitrogen, or some of them may be substituted.
  • Substitutable hydrogen fluorinated hydrocarbyl groups are also referred to as perfluorooctyl triethoxysilanes.
  • Formula 1 represents a chemical formula according to one embodiment of fluorine silane.
  • R f is a C4-C16 hydrocarbyl group having at least one fluorine atom
  • R is a C1-C6 hydrocarbyl group.
  • Formula 2 represents a chemical formula according to another embodiment of fluorine silane. Wherein R f ′ is C4-C14 perfluorooctyl triethoxysilane and R is methyl or ethyl.
  • Formula 3 represents a chemical formula according to another embodiment of fluorine silane.
  • Fluorine silane according to Formula 3 is tridecafluorooctyltriethoxy silane.
  • the hydrocarbyloxy group included in the fluorine silane and water (H 2 O) react to form three ethanol (C 2 H 5 OH) from the fluorine silane. 3 of ethanol are removed, the water and the fluorine silane coupling 3 from the H (H 2 O) is, as combined with the hydroxy group (-OH) of the phosphor surface, and carrying out the reaction are water (H 2 O) is produced. Through the bonding, a hydrophobic coating layer may be formed on the surface of the phosphor.
  • the reaction in which the fluorine silane forms a coating layer on the surface of the phosphor has been described, but this is not limited to the case of the fluorine silane, but may be applied to all silane-based coating materials including silane.
  • the coated first and second coated phosphors 107 and 108 are hydrophobic on their surfaces, the first and second phosphors 105 and 106 included therein may be protected from moisture.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un boîtier de diode électroluminescente comprenant une partie de moulage à haute résistance. Le boîtier de diode électroluminescente, selon la présente invention, comprend : un logement ; au moins une puce de diode électroluminescente disposée dans le logement ; une partie de moulage qui recouvre la ou les puces de diode électroluminescente ; une première substance luminescente excitée par la ou les puces de diode électroluminescente de manière à émettre de la lumière verte ; et une seconde substance luminescente excitée par la ou les puces de diode électroluminescente de manière à émettre une lumière rouge, laquelle partie de moulage a une perméabilité à l'oxygène gazeux inférieure ou égale à 140 cm3/m2/jour, et laquelle seconde substance luminescente peut émettre une lumière rouge ayant une largeur à mi-hauteur inférieure ou égale à 20 nm.
PCT/KR2015/001715 2014-02-28 2015-02-23 Boîtier de diode électroluminescente WO2015130055A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US15/122,050 US9735322B2 (en) 2014-02-28 2015-02-23 Light-emitting diode package

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20140024613 2014-02-28
KR10-2014-0024613 2014-02-28
KR1020140046707A KR102191211B1 (ko) 2014-02-28 2014-04-18 발광 다이오드 패키지
KR10-2014-0046707 2014-04-18

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WO2015130055A2 true WO2015130055A2 (fr) 2015-09-03
WO2015130055A3 WO2015130055A3 (fr) 2017-05-18

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN105845810A (zh) * 2016-03-30 2016-08-10 深圳市聚飞光电股份有限公司 一种基于绿光量子点的高色域白光led灯珠的制作方法
CN105870302A (zh) * 2016-03-30 2016-08-17 深圳市聚飞光电股份有限公司 一种高色域白光量子点led的封装方法
CN106941128A (zh) * 2016-01-05 2017-07-11 三星电子株式会社 白光发光器件和显示设备

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Publication number Priority date Publication date Assignee Title
CN106941128A (zh) * 2016-01-05 2017-07-11 三星电子株式会社 白光发光器件和显示设备
CN105845810A (zh) * 2016-03-30 2016-08-10 深圳市聚飞光电股份有限公司 一种基于绿光量子点的高色域白光led灯珠的制作方法
CN105870302A (zh) * 2016-03-30 2016-08-17 深圳市聚飞光电股份有限公司 一种高色域白光量子点led的封装方法

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