WO2015130055A2 - Light-emitting diode package - Google Patents

Light-emitting diode package Download PDF

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Publication number
WO2015130055A2
WO2015130055A2 PCT/KR2015/001715 KR2015001715W WO2015130055A2 WO 2015130055 A2 WO2015130055 A2 WO 2015130055A2 KR 2015001715 W KR2015001715 W KR 2015001715W WO 2015130055 A2 WO2015130055 A2 WO 2015130055A2
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WO
WIPO (PCT)
Prior art keywords
phosphor
emitting diode
light emitting
light
diode chip
Prior art date
Application number
PCT/KR2015/001715
Other languages
French (fr)
Korean (ko)
Other versions
WO2015130055A3 (en
Inventor
오광용
변호준
최혁중
남기범
Original Assignee
서울반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020140046707A external-priority patent/KR102191211B1/en
Application filed by 서울반도체 주식회사 filed Critical 서울반도체 주식회사
Priority to US15/122,050 priority Critical patent/US9735322B2/en
Publication of WO2015130055A2 publication Critical patent/WO2015130055A2/en
Publication of WO2015130055A3 publication Critical patent/WO2015130055A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Definitions

  • the present invention relates to a light emitting diode package. More specifically, the present invention relates to a light emitting diode package including a high strength molding.
  • a light emitting diode (LED) package is a compound semiconductor having a p-n junction structure of a semiconductor and refers to a device that emits predetermined light by recombination of minority carriers (electrons or holes).
  • the LED package consumes less power, has a long life, and can be miniaturized.
  • the light emitting diode package may implement white light using a phosphor that is a wavelength conversion means. That is, the phosphor may be disposed on the LED chip to implement white light through a mixture of a part of the primary light of the LED chip and the secondary light wavelength-converted by the phosphor.
  • White light-emitting diode packages of this structure are widely used because of their low cost, and in principle, structurally simple.
  • white light may be obtained by coating a phosphor emitting yellow green or yellow by absorbing a part of blue light as excitation light on a blue light emitting diode chip.
  • a part of the light is attached to a yellow-green to yellow light-emitting phosphor as an excitation source on the light-emitting diode chip emitting blue light, and thus the blue light of the light-emitting diode and the yellow-green to yellow light-emitting of the phosphor. Accordingly, a light emitting diode emitting white light is disclosed.
  • the white light emitting diode package using this method utilizes the light emission of the yellow phosphor, and thus the color rendering is low due to the spectral deficiency of the green and red regions of the emitted light.
  • the white light emitting diode package using this method utilizes the light emission of the yellow phosphor, and thus the color rendering is low due to the spectral deficiency of the green and red regions of the emitted light.
  • a light emitting diode is manufactured by using a blue light emitting diode chip and phosphors emitting green and red light as excitation light. That is, white light having a high color rendering property can be spherical through a mixture of green light and red light excited by blue light and blue light.
  • white light emitting diode is used as the backlight unit, since the match with the color filter is very high, an image closer to natural colors can be realized.
  • the light emitted through the excitation of the phosphor has a full width at half maximum, compared to the light emitting diode chip.
  • a nitride phosphor a method of manufacturing the same, and a light emitting device are disclosed. Examining the emission spectrum of the light emitting device including the nitride phosphor, it can be seen that it has a wide half width in the red region.
  • the problem to be solved by the present invention is to provide a light emitting diode package with improved reliability.
  • Another object of the present invention is to provide a light emitting diode package with improved moisture resistance.
  • Another object of the present invention is to provide a light emitting diode package that blocks the contact between the phosphor and the moisture.
  • Another problem to be solved by the present invention is to provide a light emitting diode package in which the light retention rate lasts for a long time.
  • Another object of the present invention is to provide a light emitting diode package including a phosphor having improved emission intensity.
  • Another object of the present invention is to provide a light emitting diode package with improved color reproducibility.
  • Another object of the present invention is to provide a light emitting diode package including a phosphor emitting green light and / or red light having a narrow half width.
  • Another object of the present invention is to provide a light emitting diode package including a phosphor having improved moisture resistance, including a coating layer.
  • Another object of the present invention is to provide a light emitting diode package comprising a phosphor coated to have a hydrophobicity on the surface.
  • a light emitting diode package includes a housing; At least one light emitting diode chip disposed in the housing; A molding part covering the at least one light emitting diode chip; A first phosphor that is excited by the at least one LED chip and emits green light; And a second phosphor which is excited by the at least one light emitting diode chip to emit red light, wherein the molding part has an oxygen gas permeability of 140 cc / m 2 / day or less, and the second phosphor has a half width of 20 nm or less. It can emit red light having.
  • the molding part may have an oxygen gas permeability of 100 to 140 cc / m 2 / day.
  • the second phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. have.
  • the first phosphor may be at least one of a BAM-based phosphor and a quantum dot phosphor.
  • the peak wavelength of the green light of the first phosphor may be located within the range of 520 to 570 nm, and the peak wavelength of the red light of the second phosphor may be located within the range of 610 to 650 nm.
  • the molding part may include at least one of silicon, epoxy, PMMA, PE, and PS.
  • the LED package according to another embodiment of the present invention further includes a buffer unit disposed between the molding unit and the at least one LED chip, wherein the buffer unit may have a higher oxygen transmittance than the molding unit.
  • the second phosphor may have a diameter of 25 to 40 ⁇ m.
  • the at least one light emitting diode chip may include at least one of a blue light emitting diode chip and an ultraviolet light emitting diode chip.
  • the housing may include a reflector reflecting light emitted from the at least one LED chip.
  • the housing may further include a barrier reflector covering the reflector.
  • the molding part may include a first molding part covering the at least one light emitting diode chip; And a second molding part covering the first molding part, wherein the first molding part contains the second phosphor, and the second molding part may contain the first.
  • the apparatus may further include a phosphor plate disposed on the molding unit, and the phosphor plate may contain the first and second phosphors.
  • white light having a color saturation of NTSC (national television system committee) of 90% or more may be emitted.
  • the method may further include a coating layer formed on a surface of at least one of the first phosphor and the second phosphor. As a result, contact between the first and second phosphors and water may be prevented.
  • the coating layer may include a silane-based coating material. Since the silane-based coating material is hydrophobic, the surface of the first and second phosphors can be prevented from binding to moisture.
  • the silane-based coating material may be halogenated silane or methylated silane.
  • the halogenated silane may be fluorine silane.
  • a light emitting diode package includes: a housing; A light emitting diode chip disposed in the housing; At least one phosphor is excited by the light emitting diode chip, and the phosphor may emit red light having a diameter of 25 ⁇ m or more and a half width of 20 nm or less.
  • the phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. have.
  • the phosphor may have a diameter of 25 to 40 ⁇ m.
  • a light emitting diode package includes: a housing; A light emitting diode chip disposed in the housing; At least one phosphor excited by the light emitting diode chip; And a coating layer surrounding the phosphor, wherein the coating layer may be a silane-based coating material.
  • the silane-based coating material may include methylated silane or halogenated silane.
  • the coating layer may be a halogenated silane coated on the surface of the first phosphor and the second phosphor.
  • the LED package according to the present invention can block the contact between the phosphor distributed in the molding part and external moisture, thereby improving the reliability of the phosphor.
  • the light retention of the LED package can be maintained for a long time.
  • the phosphor included in the LED package according to the present invention may emit green light and / or red light having a narrow half width, the color reproducibility of the LED package may be improved. Also. Through the diameter of the phosphor, the light emission intensity can be improved.
  • the phosphor included in the LED package according to the present invention may be coated with a coating layer comprising a halogenated silane, thereby preventing contact of the phosphor with moisture. Reliability can be improved.
  • FIG. 1 is a cross-sectional view showing a light emitting diode package according to an embodiment of the present invention.
  • FIG. 2 is a graph showing the magnitude of the light emission intensity according to the diameter of the second phosphor included in the LED package according to the embodiment of the present invention.
  • FIG 3 is a graph illustrating a change in light retention rate with time of a molding part included in a light emitting diode package according to an exemplary embodiment of the present invention.
  • FIG. 4 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 5 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 6 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 7 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • FIG. 8 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
  • a light emitting diode package includes a housing 101, a light emitting diode chip 102, a first phosphor 105, a second phosphor 106, and a molding part 104.
  • the light emitting diode chip 102, the first phosphor 105, the second phosphor 106, and the molding part 104 may be disposed on the housing 101.
  • the light emitting diode chip 102 may be disposed on the bottom surface of the housing 101.
  • Leading terminals (not shown) for inputting power to the light emitting diode chip 102 may be installed in the housing 101.
  • the molding part 104 may include the first and second phosphors 105 and 106 and cover the light emitting diode chip 102.
  • the housing 101 may be formed of a common plastic (polymer) or ABS (acrylonitrile butadiene styrene), liquid crystalline polymer (LCP), polyamide (PA), polyphenylene sulfide (IPS), thermoplastic elastomer (TPE), or the like. It may be formed of a ceramic.
  • the housing 101 may be formed of ceramic.
  • the housing 101 including the ceramic may not be discolored or deteriorated by ultraviolet light emitted from the ultraviolet light emitting diode chip, thereby maintaining the reliability of the LED package.
  • the housing 101 When the housing 101 is metal, the housing 101 may include two or more metal frames, and the metal frames may be insulated from each other. Through the housing 101 including the metal, it is possible to improve the heat dissipation capability of the LED package. Although the materials capable of forming the housing 101 have been mentioned above, the housing 101 may be formed of various materials without being limited thereto.
  • the housing 101 may include an inclined inner wall for reflecting light emitted from the light emitting diode chip 102.
  • the molding part 104 may be formed of a material having a high hardness. Specifically, when the hardness of the molding part 104 is measured by Shore hardness, the measured value is 69 to 71, and the indexer type may be a D type. When the hardness of the molding part 104 is measured by oxygen gas permeability, the oxygen gas permeability may be 100 to 140 cc / m 2 / day.
  • the molding part 104 may be formed of a material including at least one of silicon, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS) to have high hardness.
  • the molding part 104 may be formed through an injection process using a mixture of the above-described material and the first and second phosphors 105 and 106. In addition, after the production using a separate mold, it may be formed by pressing or heat treatment molding portion 104.
  • the molding part 104 may be formed in various shapes such as a convex lens shape, a flat plate shape (not shown), and a shape having predetermined irregularities on the surface thereof.
  • the LED package according to the present invention discloses a molding part 104 having a convex lens shape, the shape of the molding part 104 is not limited thereto.
  • the light emitting diode chip 102 may be an ultraviolet light emitting diode chip or a blue light emitting diode chip.
  • the peak wavelength of the emitted light may be in the range of 410 to 490 nm.
  • the full width at half maximum (FWHM) of the peak wavelength of the blue light emitted from the light emitting diode chip 102 may be 40 nm or less.
  • the light emitting diode package according to the present invention has been disclosed in which one light emitting diode chip 102 is disposed, but the number and arrangement of light emitting diode chips 102 are not limited thereto.
  • the first phosphor 105 may be excited by the light emitting diode chip 102 to emit green light.
  • the second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light.
  • the peak wavelength of the green light emitted by the first phosphor 105 may be in the range of 520 to 570 nm.
  • the first phosphor 105 may emit green light having a half width of less than 35 nm.
  • the first phosphor 105 may include at least one phosphor selected from BAM (Ba-Al-Mg) -based phosphors, quantum dot phosphors, and fluoride-based phosphors.
  • the fluoride-based phosphor may be a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ .
  • A may be one of Li, Na, K, Rb, Ce, and NH 4
  • M may be one of Si, Nb, and Ta.
  • the half width of the green light is narrower, green light having high color purity can be realized.
  • the full width at half maximum is 35 nm or more, since the color purity of light to be emitted is low, it is difficult to reproduce more than 90% of the full color reproduction range defined by the NTSC (National Television System Committee) standard adopted as a broadcasting method of color television. . Therefore, in order to implement NTSC color saturation of 90% or more of the white light emitted by the light emitting device according to the present invention, the first phosphor emits green light having a half width of 35 nm or less.
  • the second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light.
  • the peak wavelength of the red light emitted by the second phosphor 106 may be located within a range of 610 to 650 nm.
  • the second phosphor 106 may include at least one phosphor selected from a quantum dot phosphor, a sulfide phosphor, and a fluoride phosphor.
  • the fluoride series phosphor may be a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ .
  • A may be one of Li, Na, K, Rb, Ce, and NH 4
  • M may be one of Si, Nb, and Ta.
  • the second phosphor 106 may emit red light having a narrow half width. Specifically, red light having a half width of 30 to 40 nm for a quantum dot phosphor, a half width of 65 nm or less for a sulfide-based phosphor, and a half width of 20 nm or less for a fluoride-based phosphor can be emitted. That is, when the second phosphor 106 is a fluoride series phosphor, red light having the narrowest half width can be emitted.
  • FIG. 2 is a graph showing the magnitude of the light emission intensity according to the diameter of the second phosphor included in the LED package according to the embodiment of the present invention.
  • the second phosphor is a fluoride-based phosphor
  • a line represents a case where the diameter of the phosphor is 30 ⁇ m
  • a line b represents a case where the diameter of the phosphor is 20 ⁇ m.
  • the emission intensity is improved by about 16% when the diameter of the phosphor is 30 ⁇ m, compared with the case of 20 ⁇ m.
  • the diameters of 20 ⁇ m, 25 ⁇ m, or 30 ⁇ m, respectively were combined with the second phosphors and the green phosphors, which are fluoride-based phosphors.
  • the amount of white light is improved to 102.30% when the second phosphor having a diameter of 25 ⁇ m is combined with the green phosphor.
  • the amount of white light increased to 103.00%.
  • the diameter thereof when the second phosphor according to the present invention is a fluoride series phosphor, the diameter thereof may be 25 ⁇ m or more. Also, the diameter may be 25 ⁇ m to 40 ⁇ m (based on D50). Within the diameter range of the phosphor, the second phosphor may exhibit excellent emission intensity, and the light emitting device including the second phosphor may improve the amount of white light.
  • the first and second phosphors 105 and 106 are preferably uniformly distributed in the molding part 104, whereby the green and second phosphors are excited and emitted by the first phosphor 105.
  • the red light emitted by the 106 and the blue light emitted by the blue light emitting diode 103 may be uniformly mixed to realize more uniform white light.
  • the first and second phosphors 105 and 106 may be disposed adjacent to or spaced apart from the light emitting diode chip 102. When the first and second phosphors 105 and 106 are spaced apart from each other, deterioration due to the LED chip 102 may be prevented.
  • FIG 3 is a graph illustrating a change in light retention rate with time of a molding part included in a light emitting diode package according to an exemplary embodiment of the present invention.
  • line a indicates oxygen gas permeability of 130 cc / m 2 / day
  • line b indicates oxygen gas permeability of 260 cc / m 2 / day
  • line c indicates oxygen gas permeability of 520 cc / m. 2 / day.
  • the LED package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, and a buffer unit 109.
  • the light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the buffer unit 109, and thus a redundant description thereof is omitted.
  • the buffer unit 109 may be disposed between the LED chip 102 and the molding unit 104.
  • the buffer part may be formed of a material including at least one of silicone, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS).
  • PMMA polymethyl methacrylate
  • PE polyethylene
  • PS polystyrene
  • the hardness of the buffer unit 109 is measured by Shore hardness, the measured value is 59 to 61, and the indexer type may be A type. That is, the hardness of the buffer unit 109 may be smaller than the molding unit 104. Accordingly, the oxygen gas permeability of the buffer unit 109 may be greater than that of the molding unit 104.
  • the buffer unit 109 has been disclosed in the case where the light emitting diode chip 102 is disposed around the buffer unit 109, the buffer unit 109 is disposed in a wide area so as to be in contact with both the left and right walls of the housing 101. It may be arranged.
  • the light emitting diode package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, a reflector 111, and a barrier reflector ( 112).
  • the LED package according to the present exemplary embodiment is generally similar to the LED package according to the exemplary embodiment except for the reflector 111 and the barrier reflector 112, and thus, a redundant description thereof will be omitted.
  • the reflector 111 may be spaced apart from the light emitting diode chip 102 and disposed on a side surface thereof.
  • the reflector 111 may increase light emission efficiency by maximizing reflection of light emitted from the light emitting diode chip 102 and the first and second phosphors 105 and 106.
  • the reflector 111 may be formed of any one of a reflective coating film and a reflective coating material layer.
  • the reflector 111 may be formed of at least one of an inorganic material, an organic material, a metal material, and a metal oxide material having excellent heat resistance and light resistance.
  • the reflector 111 may include a metal or a metal oxide having high reflectance such as aluminum (Al), silver (Ag), gold (Au), titanium dioxide (TiO 2 ), or the like.
  • the reflector 111 may be formed by depositing or coating a metal or metal oxide on the housing 101, or may be formed by printing a metal ink.
  • the reflector 111 may be formed by adhering a reflective film or a reflective sheet on the housing 101.
  • the barrier reflector 112 may cover the reflector 111.
  • the barrier reflector 112 may prevent deterioration of the reflector 111 due to heat emitted from the light emitting diode chip 102.
  • the barrier reflector 112 may be formed of an inorganic material or a metal material having high light resistance and high reflectance.
  • the light emitting device includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, and a second phosphor 106.
  • the apparatus may further include a first molding part 104b and a second molding part 104a.
  • the light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the first molding part 104b and the second molding part 104a, and thus a redundant description thereof will be omitted.
  • the first molding part 104b may cover the light emitting diode chip 102.
  • the second molding part 104a may cover the first molding part 104b.
  • the first molding part 104b may be formed of a material having the same hardness as the second molding part 104a or may be formed of a material having a different hardness.
  • the hardness of the first molding part 104b may be lower than that of the second molding part 104a.
  • thermal stress due to the light emitting diode chip 102 may be alleviated. can do.
  • the first molding part 104b may contain a second phosphor 106 that emits red light.
  • the second molding part 104a may contain the first phosphor 105 that emits green light.
  • the phosphors emitting long wavelengths may be disposed below and the phosphors emitting short wavelengths may be disposed above to prevent the green light emitted from the first phosphor 105 from being absorbed and lost by the second phosphor 106 again. .
  • the light emitting diode package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, and a phosphor plate 118. .
  • the light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the phosphor plate 118, and thus, description thereof will not be repeated.
  • the phosphor plate 118 is spaced apart from the light emitting diode chip 102 and disposed on the molding part 104, and may include first and second phosphors 105 and 106.
  • the phosphor plate 118 may be formed of the same material as the molding part 104 or a material having a high hardness.
  • first and second phosphors 105 and 106 are spaced apart from the light emitting diode chip 102, damage caused by heat or light of the first and second phosphors 105 and 106 and the phosphor plate 118 is caused. Can be reduced. Therefore, the reliability of the first and second phosphors 105 and 106 can be improved.
  • An empty space may be formed between the phosphor plate 118 and the light emitting diode chip 102 instead of the molding part 104.
  • the LED package includes a housing 101, a light emitting diode chip 102, a first coating phosphor 107, a second coating phosphor 108, and a molding part 104.
  • the first coating phosphor 107 includes a first phosphor 105 and a coating layer 105a.
  • the light emitting diode package according to the present exemplary embodiment is substantially similar to the light emitting diode package according to the exemplary embodiment except for the first coating phosphor 107 and the second coating phosphor 108, and thus, a redundant description thereof will be omitted.
  • the first coating phosphor 107 may include a first phosphor 105 and a coating layer 105a surrounding the first phosphor 105.
  • the second coaching phosphor 108 may also include a second phosphor 106 and a coating layer 105a surrounding the second phosphor 106.
  • the coating layer 105a may be disposed on the surfaces of the first and second phosphors 105 and 106 to block contact with moisture.
  • the coating layer 105a may combine with the surfaces of the first and second phosphors 105 and 106 to render the surfaces of the first and second coating phosphors 107 and 108 hydrophobic.
  • the coating layer 105a may include a silane-based coating material.
  • the silane-based coating material may be methylated silane or halogenated silane.
  • Methylated silanes are silicone containing compounds in which some groups of silanes are substituted with methyl groups.
  • the halogenated silane may comprise one of fluorine (F), chlorine (Cl), bromine (Br) and iodine (I).
  • the halogenated silane may be a fluorine silane including fluorine (F).
  • Fluorine silane is a silicon-containing compound containing a hydrocarbyl group substituted with at least one fluorine atom and a reactive hydrocarbyloxy group capable of displacement by nucleophilic atoms.
  • Hydrocarbyl groups are linear, branched, cyclic groups containing carbon and hydrogen such as alkanes, alkenes, alkynes, and aryl groups. Hydrocarbyl groups include halogen group, cyano group, keto group, ester group, hydroxyl group, carboxyl group, oxygen, sulfur ) And nitrogen, or some of them may be substituted.
  • Substitutable hydrogen fluorinated hydrocarbyl groups are also referred to as perfluorooctyl triethoxysilanes.
  • Formula 1 represents a chemical formula according to one embodiment of fluorine silane.
  • R f is a C4-C16 hydrocarbyl group having at least one fluorine atom
  • R is a C1-C6 hydrocarbyl group.
  • Formula 2 represents a chemical formula according to another embodiment of fluorine silane. Wherein R f ′ is C4-C14 perfluorooctyl triethoxysilane and R is methyl or ethyl.
  • Formula 3 represents a chemical formula according to another embodiment of fluorine silane.
  • Fluorine silane according to Formula 3 is tridecafluorooctyltriethoxy silane.
  • the hydrocarbyloxy group included in the fluorine silane and water (H 2 O) react to form three ethanol (C 2 H 5 OH) from the fluorine silane. 3 of ethanol are removed, the water and the fluorine silane coupling 3 from the H (H 2 O) is, as combined with the hydroxy group (-OH) of the phosphor surface, and carrying out the reaction are water (H 2 O) is produced. Through the bonding, a hydrophobic coating layer may be formed on the surface of the phosphor.
  • the reaction in which the fluorine silane forms a coating layer on the surface of the phosphor has been described, but this is not limited to the case of the fluorine silane, but may be applied to all silane-based coating materials including silane.
  • the coated first and second coated phosphors 107 and 108 are hydrophobic on their surfaces, the first and second phosphors 105 and 106 included therein may be protected from moisture.

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention relates to a light-emitting diode package comprising a high-strength molding part. The light-emitting diode package, according to the present invention, comprises: a housing; at least one light-emitting diode chip disposed in the housing; a molding part which covers the at least one light-emitting diode chip; a first phosphor excited by the at least one light-emitting diode chip so as to emit green light; and a second phosphor excited by the at least one light-emitting diode chip so as to emit red light, wherein the molding part has an oxygen gas permeability of 140cc/m2/day or less, and the second phosphor can emit red light having a full width at half maximum of 20nm or less.

Description

발광 다이오드 패키지Light emitting diode package
본 발명은 발광 다이오드 패키지에 대한 것이다. 더욱 상세하게는, 본 발명은 고강도의 몰딩부를 포함하는 발광 다이오드 패키지에 대한 것이다.The present invention relates to a light emitting diode package. More specifically, the present invention relates to a light emitting diode package including a high strength molding.
발광 다이오드(Light Emitting Diode: LED) 패키지는 반도체의 p-n 접합 구조를 가지는 화합물 반도체로서 소수 캐리어(전자 또는 정공)들의 재결합에 의하여 소정의 광을 발산하는 소자를 지칭한다. 발광 다이오드 패키지는 소비 전력이 적고 수명이 길며, 소형화가 가능하다. A light emitting diode (LED) package is a compound semiconductor having a p-n junction structure of a semiconductor and refers to a device that emits predetermined light by recombination of minority carriers (electrons or holes). The LED package consumes less power, has a long life, and can be miniaturized.
발광 다이오드 패키지는 파장 변환 수단인 형광체를 사용하여 백색광을 구현할 수 있다. 즉, 형광체를 발광 다이오드 칩 상에 배치하여, 발광 다이오드 칩의 1차 광의 일부와 형광체에 의해 파장 변환된 2차 광의 혼색을 통하여 백색광을 구현할 수 있다. 이런 구조의 백색 발광 다이오드 패키지는 가격이 싸고, 원리적 및 구조적으로 간단하기 때문에 널리 이용되고 있다.The light emitting diode package may implement white light using a phosphor that is a wavelength conversion means. That is, the phosphor may be disposed on the LED chip to implement white light through a mixture of a part of the primary light of the LED chip and the secondary light wavelength-converted by the phosphor. White light-emitting diode packages of this structure are widely used because of their low cost, and in principle, structurally simple.
구체적으로, 청색 발광 다이오드 칩 상에 청색광의 일부를 여기광으로 흡수하여 황록색 또는 황색을 발광하는 형광체를 도포하여 백색광을 얻을 수 있다. 대한민국 공개특허 10-2004-0032456호를 참조하면, 청색으로 발광하는 발광 다이오드 칩 위에 그 광의 일부를 여기원으로서 황록색 내지 황색 발광하는 형광체를 부착하여 발광 다이오드의 청색 발광과 형광체의 황록색 내지 황색 발광에 따라 백색 발광하는 발광 다이오드를 개시하고 있다.Specifically, white light may be obtained by coating a phosphor emitting yellow green or yellow by absorbing a part of blue light as excitation light on a blue light emitting diode chip. Referring to Korean Patent Laid-Open Publication No. 10-2004-0032456, a part of the light is attached to a yellow-green to yellow light-emitting phosphor as an excitation source on the light-emitting diode chip emitting blue light, and thus the blue light of the light-emitting diode and the yellow-green to yellow light-emitting of the phosphor. Accordingly, a light emitting diode emitting white light is disclosed.
그러나, 이러한 방식을 사용하는 백색 발광 다이오드 패키지는 황색 형광체의 발광을 활용하므로, 방출되는 광의 녹색 및 적색 영역의 스펙트럼 결핍으로 인해 연색성이 낮다. 특히, 백라이트 유닛(backlight unit)으로 사용 시, 색 필터를 투과한 이후의 낮은 색순도로 인하여 자연색에 가까운 색 구현이 어렵다.However, the white light emitting diode package using this method utilizes the light emission of the yellow phosphor, and thus the color rendering is low due to the spectral deficiency of the green and red regions of the emitted light. In particular, when used as a backlight unit, it is difficult to realize colors close to natural colors due to low color purity after passing through the color filter.
이러한 문제점을 해결하기 위해, 청색 발광 다이오드 칩과 청색광을 여기광으로 하여 녹색 및 적색을 발광하는 형광체들을 사용하여 발광 다이오드를 제조한다. 즉, 청색광과 청색광에 의해 여기되어 나오는 녹색광 및 적색광의 혼색을 통하여, 높은 연색성을 가지는 백색광을 구형할 수 있다. 이러한, 백색 발광 다이오드를 백라이트 유닛으로 사용할 경우, 색 필터와의 일치도가 매우 높기 때문에, 보다 자연색에 가까운 영상을 구현할 수 있다. 그러나, 형광체의 여기를 통하여 방출되는 광은 발광 다이오드 칩과 비교하여, 넓은 반치폭(full width at half maximum)을 가진다. 또한, 대한민국 등록특허 10-0961324호를 참조하면, 질화물 형광체와 그 제조 방법 및 발광 장치가 개시되어 있다. 질화물 형광체를 포함하는 발광 장치의 발광 스펙트럼을 검토하면, 적색 영역에서 넓은 반치폭을 가짐을 알 수 있다.In order to solve this problem, a light emitting diode is manufactured by using a blue light emitting diode chip and phosphors emitting green and red light as excitation light. That is, white light having a high color rendering property can be spherical through a mixture of green light and red light excited by blue light and blue light. When the white light emitting diode is used as the backlight unit, since the match with the color filter is very high, an image closer to natural colors can be realized. However, the light emitted through the excitation of the phosphor has a full width at half maximum, compared to the light emitting diode chip. In addition, referring to Korean Patent Registration No. 10-0961324, a nitride phosphor, a method of manufacturing the same, and a light emitting device are disclosed. Examining the emission spectrum of the light emitting device including the nitride phosphor, it can be seen that it has a wide half width in the red region.
따라서, 보다 높은 연색성을 가지는 백색광을 구현하기 위해서는, 보다 좁은 반치폭을 가지는 형광체의 사용이 필요하다. 그러나, 좁은 반치폭을 가지는 형광체들은 대체로 수분에 취약한 특성을 보이고, 이는 발광 다이오드 패키지의 전체적인 신뢰성을 저하시키는 문제점이 있다.Therefore, in order to realize white light having a higher color rendering property, it is necessary to use a phosphor having a narrower half-value width. However, phosphors having a narrow half width show a property that is generally vulnerable to moisture, which lowers the overall reliability of the LED package.
본 발명이 해결하고자 하는 과제는 신뢰성이 향상된 발광 다이오드 패키지를 제공하는 것이다.The problem to be solved by the present invention is to provide a light emitting diode package with improved reliability.
본 발명이 해결하고자 하는 다른 과제는 내습성이 향상된 발광 다이오드 패키지를 제공하는 것이다.Another object of the present invention is to provide a light emitting diode package with improved moisture resistance.
본 발명이 해결하고자 하는 또 다른 과제는 형광체와 수분의 접촉을 차단하는 발광 다이오드 패키지를 제공하는 것이다.Another object of the present invention is to provide a light emitting diode package that blocks the contact between the phosphor and the moisture.
본 발명이 해결하고자 하는 또 다른 과제는 광유지율이 장시간 지속되는 발광 다이오드 패키지를 제공하는 것이다.Another problem to be solved by the present invention is to provide a light emitting diode package in which the light retention rate lasts for a long time.
본 발명이 해결하고자 하는 또 다른 과제는 발광 강도가 향상된 형광체를 포함하는 발광 다이오드 패키지를 제공하는 것이다. Another object of the present invention is to provide a light emitting diode package including a phosphor having improved emission intensity.
본 발명이 해결하고자 하는 또 다른 과제는 색재현성이 향상된 발광 다이오드 패키지를 제공하는 것이다.Another object of the present invention is to provide a light emitting diode package with improved color reproducibility.
본 발명이 해결하고자 하는 또 다른 과제는 좁은 반치폭을 가지는 녹색광 및/또는 적색광을 방출하는 형광체를 포함하는 발광 다이오드 패키지를 제공하는 것이다.Another object of the present invention is to provide a light emitting diode package including a phosphor emitting green light and / or red light having a narrow half width.
본 발명이 해결하고자 하는 또 다른 과제는 코팅층을 포함하여 수분 저항성이 향상된 형광체를 포함하는 발광 다이오드 패키지를 제공하는 것이다.Another object of the present invention is to provide a light emitting diode package including a phosphor having improved moisture resistance, including a coating layer.
본 발명이 해결하고자 하는 또 다른 과제는 표면에 소수성을 가지도록 코팅된 형광체를 포함하는 발광 다이오드 패키지를 제공하는 것이다 Another object of the present invention is to provide a light emitting diode package comprising a phosphor coated to have a hydrophobicity on the surface.
본 발명의 일 실시예에 따른 발광 다이오드 패키지는 하우징; 상기 하우징 내에 배치되는 적어도 하나의 발광 다이오드 칩; 상기 적어도 하나의 발광 다이오드 칩을 덮는 몰딩부; 상기 적어도 하나의 발광 다이오드 칩에 의해 여기되어 녹색광을 방출하는 제1 형광체; 및 상기 적어도 하나의 발광 다이오드 칩에 의해 여기되어 적색광을 방출하는 제2 형광체를 포함하되, 상기 몰딩부는 140cc/m2/day 이하의 산소 가스 투과도를 가지고, 상기 제2 형광체는 20㎚ 이하의 반치폭을 가지는 적색광을 방출할 수 있다.A light emitting diode package according to an embodiment of the present invention includes a housing; At least one light emitting diode chip disposed in the housing; A molding part covering the at least one light emitting diode chip; A first phosphor that is excited by the at least one LED chip and emits green light; And a second phosphor which is excited by the at least one light emitting diode chip to emit red light, wherein the molding part has an oxygen gas permeability of 140 cc / m 2 / day or less, and the second phosphor has a half width of 20 nm or less. It can emit red light having.
나아가, 상기 몰딩부는 100 내지 140cc/m2/day의 산소 가스 투과도를 가질 수 있다.Furthermore, the molding part may have an oxygen gas permeability of 100 to 140 cc / m 2 / day.
상기 제2 형광체는 A2MF6: Mn4+의 화학식을 가지는 형광체이고, 상기 A는 Li, Na, K, Rb, Ce 및 NH4 중 하나이고, M은 Si, Nb 및 Ta 중 하나일 수 있다.The second phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. have.
상기 제1 형광체는 BAM 계열 형광체 및 양자점 형광체 중 적어도 하나일 수 있다.The first phosphor may be at least one of a BAM-based phosphor and a quantum dot phosphor.
상기 제1 형광체의 녹색광의 피크 파장은 520 내지 570㎚ 범위 내에 위치하고, 상기 제2 형광체의 적색광의 피크 파장은 610 내지 650㎚ 범위 내에 위치할 수 있다.The peak wavelength of the green light of the first phosphor may be located within the range of 520 to 570 nm, and the peak wavelength of the red light of the second phosphor may be located within the range of 610 to 650 nm.
상기 몰딩부는 실리콘, 에폭시, PMMA, PE 및 PS 중 적어도 하나를 포함할 수 있다.The molding part may include at least one of silicon, epoxy, PMMA, PE, and PS.
본 발명의 다른 실시예에 따른 발광 다이오드 패키지는 상기 몰딩부와 상기 적어도 하나의 발광 다이오드 칩 사이에 배치되는 버퍼부를 더 포함하되, 상기 버퍼부는 상기 몰딩부보다 높은 산소 투과도를 가질 수 있다.The LED package according to another embodiment of the present invention further includes a buffer unit disposed between the molding unit and the at least one LED chip, wherein the buffer unit may have a higher oxygen transmittance than the molding unit.
상기 제2 형광체는 25 내지 40㎛의 직경을 가질 수 있다.The second phosphor may have a diameter of 25 to 40 μm.
상기 적어도 하나의 발광 다이오드 칩은 청색 발광 다이오드 칩 및 자외선 발광 다이오드 칩 중 적어도 하나를 포함할 수 있다.The at least one light emitting diode chip may include at least one of a blue light emitting diode chip and an ultraviolet light emitting diode chip.
상기 하우징은 상기 적어도 하나의 발광 다이오드 칩에서 방출된 광을 반사하는 리플렉터를 포함할 수 있다The housing may include a reflector reflecting light emitted from the at least one LED chip.
상기 하우징은 상기 리플렉터를 덮는 베리어 리플렉터를 더 포함할 수 있다.The housing may further include a barrier reflector covering the reflector.
상기 몰딩부는 상기 적어도 하나의 발광 다이오드 칩을 덮는 제1 몰딩부; 및 상기 제1 몰딩부를 덮는 제2 몰딩부를 포함하되, 상기 제1 몰딩부는 상기 제2 형광체를 함유하고, 상기 제2 몰딩부는 상기 제1 함유할 수 있다.The molding part may include a first molding part covering the at least one light emitting diode chip; And a second molding part covering the first molding part, wherein the first molding part contains the second phosphor, and the second molding part may contain the first.
상기 몰딩부 상에 배치되는 형광체 플레이트를 더 포함하고, 상기 형광체 플레이트는 상기 제1 및 제2 형광체를 함유할 수 있다.The apparatus may further include a phosphor plate disposed on the molding unit, and the phosphor plate may contain the first and second phosphors.
상기 발광 다이오드 칩, 상기 제1 형광체 및 제2 형광체에서 방출되는 광의 합성에 의해 90% 이상의 NTSC(national television system committee) 색채 포화도를 갖는 백색광을 방출할 수 있다.By synthesizing the light emitted from the light emitting diode chip, the first phosphor and the second phosphor, white light having a color saturation of NTSC (national television system committee) of 90% or more may be emitted.
상기 제1 형광체 및 상기 제2 형광체 중 적어도 하나의 표면에 형성된 코팅층을 더 포함할 수 있다. 이를 통하여, 제1 및 제2 형광체와 수분과의 접촉을 방지할 수 있다.The method may further include a coating layer formed on a surface of at least one of the first phosphor and the second phosphor. As a result, contact between the first and second phosphors and water may be prevented.
상기 코팅층은 실란계 코팅물질을 포함할 수 있다. 실란계 코팅물질은 소수성을 띠므로, 제1 및 제2 형광체 표면은 수분과의 결합이 방지될 수 있다.The coating layer may include a silane-based coating material. Since the silane-based coating material is hydrophobic, the surface of the first and second phosphors can be prevented from binding to moisture.
상기 실란계 코팅물질은 할로겐화 실란 또는 메틸화 실란일 수 있다.The silane-based coating material may be halogenated silane or methylated silane.
상기 할로겐화 실란은 불소 실란일 수 있다.The halogenated silane may be fluorine silane.
본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 하우징; 상기 하우징 내에 배치되는 발광 다이오드 칩; 상기 발광 다이오드 칩에 의해 여기되는 적어도 하나의 형광체를 포함하고, 상기 형광체는 25㎛ 이상의 직경을 가지고, 20㎚ 이하의 반치폭을 가지는 적색광을 방출할 수 있다.According to another embodiment of the present invention, a light emitting diode package includes: a housing; A light emitting diode chip disposed in the housing; At least one phosphor is excited by the light emitting diode chip, and the phosphor may emit red light having a diameter of 25 μm or more and a half width of 20 nm or less.
나아가, 상기 형광체는 A2MF6: Mn4+의 화학식을 가지는 형광체이고, 상기 A는 Li, Na, K, Rb, Ce 및 NH4 중 하나이고, M은 Si, Nb 및 Ta 중 하나일 수 있다.Furthermore, the phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. have.
상기 형광체는 25 내지 40㎛의 직경을 가질 수 있다The phosphor may have a diameter of 25 to 40㎛.
본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지는 하우징; 상기 하우징 내에 배치되는 발광 다이오드 칩; 상기 발광 다이오드 칩에 의해 여기되는 적어도 하나의 형광체; 및 상기 형광체를 감싸는 코팅층을 포함하고, 상기 코팅층은 실란계 코팅물질일 수 있다.According to another embodiment of the present invention, a light emitting diode package includes: a housing; A light emitting diode chip disposed in the housing; At least one phosphor excited by the light emitting diode chip; And a coating layer surrounding the phosphor, wherein the coating layer may be a silane-based coating material.
상기 실란계 코팅물질은 메틸화 실란 또는 할로겐화 실란을 포함할 수 있다.The silane-based coating material may include methylated silane or halogenated silane.
상기 코팅층은 상기 제1 형광체 및 상기 제2 형광체 표면에 피복된 할로겐화 실란일 수 있다.The coating layer may be a halogenated silane coated on the surface of the first phosphor and the second phosphor.
본 발명에 따른 발광 다이오드 패키지는 몰딩부에 분포하는 형광체와 외부 수분과의 접촉을 차단하여, 형광체의 신뢰성을 향상시킬 수 있다. 또한, 발광 다이오드 패키지의 광유지율을 장시간 동안 유지할 수 있다. The LED package according to the present invention can block the contact between the phosphor distributed in the molding part and external moisture, thereby improving the reliability of the phosphor. In addition, the light retention of the LED package can be maintained for a long time.
본 발명에 따른 발광 다이오드 패키지가 포함하는 형광체는 좁은 반치폭을 가지는 녹색광 및/또는 적색광을 방출할 수 있으므로, 발광 다이오드 패키지의 색재현성을 향상시킬 수 있다. 또한. 형광체의 직경을 통하여, 발광 강도를 향상시킬 수 있다.Since the phosphor included in the LED package according to the present invention may emit green light and / or red light having a narrow half width, the color reproducibility of the LED package may be improved. Also. Through the diameter of the phosphor, the light emission intensity can be improved.
본 발명에 따른 발광 다이오드 패키지가 포함하는 형광체는 할로겐화 실란을 포함하는 코팅층으로 피복될 수 있어, 형광체와 수분과의 접촉을 방지하여. 신뢰성을 향상시킬 수 있다.The phosphor included in the LED package according to the present invention may be coated with a coating layer comprising a halogenated silane, thereby preventing contact of the phosphor with moisture. Reliability can be improved.
도 1은 본 발명의 일 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다.1 is a cross-sectional view showing a light emitting diode package according to an embodiment of the present invention.
도 2는 본 발명의 일 실시예에 따른 발광 다이오드 패키지가 포함하는 제2 형광체의 직경에 따른 발광 강도의 크기를 나타내는 그래프이다.2 is a graph showing the magnitude of the light emission intensity according to the diameter of the second phosphor included in the LED package according to the embodiment of the present invention.
도 3은 본 발명의 일 실시예에 따른 발광 다이오드 패키지가 포함하는 몰딩부의 시간에 따른 광유지율의 변화를 나타내는 그래프이다.3 is a graph illustrating a change in light retention rate with time of a molding part included in a light emitting diode package according to an exemplary embodiment of the present invention.
도 4는 본 발명의 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다.4 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
도 5은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다.5 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
도 6는 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다.6 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
도 7는 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다.7 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
도 8은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다.8 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention.
이하, 첨부된 도면들을 참조하여 본 발명의 실시예들을 상세히 설명한다. 우선 각 도면의 구성 요소들에 참조 부호를 부가함에 있어서, 동일한 구성 요소들에 대해서는 비록 다른 도면상에 표시되더라도 가능한 한 동일한 부호를 가지도록 하고 있음에 유의해야 한다. 또한, 본 발명을 설명함에 있어, 관련된 공지 구성 또는 기능에 대한 구체적인 설명이 본 발명의 요지를 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명은 생략한다. 또한, 이하에서 본 발명의 전형적인 실시예를 설명할 것이나, 본 발명의 기술적 사상은 이에 한정되거나 제한되지 않고 당업자에 의해 변형되어 다양하게 실시될 수 있음은 물론이다.Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention; First, in adding reference numerals to the components of each drawing, it should be noted that the same reference numerals are assigned to the same components as much as possible, even if shown on different drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related well-known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted. In addition, the following will be described a typical embodiment of the present invention, but the technical spirit of the present invention is not limited to this, but may be modified by those skilled in the art can be variously carried out.
도 1은 본 발명의 일 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다. 도 1를 참조하면, 발광 다이오드 패키지는 하우징(101), 발광 다이오드 칩(102), 제1 형광체(105), 제2 형광체(106) 및 몰딩부(104)를 포함한다.1 is a cross-sectional view showing a light emitting diode package according to an embodiment of the present invention. Referring to FIG. 1, a light emitting diode package includes a housing 101, a light emitting diode chip 102, a first phosphor 105, a second phosphor 106, and a molding part 104.
상기 하우징(101) 상에 발광 다이오드 칩(102), 제1 형광체(105), 제2 형광체(106) 및 몰딩부(104)가 배치될 수 있다. 발광 다이오드 칩(102)은 하우징(101)의 바닥면에 배치될 수 있다, 하우징(101)에는 발광 다이오드 칩(102)에 전력을 입력하기 위한 리드 단자들(미도시)이 설치될 수 있다. 몰딩부(104)는 제1 및 제2 형광체(105, 106)들을 포함하고, 발광 다이오드 칩(102)을 덮을 수 있다.The light emitting diode chip 102, the first phosphor 105, the second phosphor 106, and the molding part 104 may be disposed on the housing 101. The light emitting diode chip 102 may be disposed on the bottom surface of the housing 101. Leading terminals (not shown) for inputting power to the light emitting diode chip 102 may be installed in the housing 101. The molding part 104 may include the first and second phosphors 105 and 106 and cover the light emitting diode chip 102.
하우징(101)은 일반적인 플라스틱(폴리머) 또는 ABS(acrylonitrile butadiene styrene), LCP(liquid crystalline polymer), PA(polyamide), IPS(polyphenylene sulfide), TPE(thermoplastic elastomer)등으로 형성될 수 있고, 메탈 또는 세라믹으로 형성될 수 있다. 발광 다이오드 칩(102)이 자외선 발광 다이오드 칩인 경우에는, 하우징(101)은 세라믹으로 형성될 수 있다. 하우징(101)이 세라믹인 경우에는, 자외선 발광 다이오드 칩에서 방출된 자외선 광에 의해 세라믹을 포함하는 하우징(101)이 변색되거나 변질될 우려가 없어, 발광 다이오드 패키지의 신뢰성을 유지할 수 있다. 하우징(101)이 메탈인 경우에는, 하우징(101)은 둘 이상의 금속 프레임들을 포함할 수 있고, 금속 프레임들은 서로 절연될 수 있다. 메탈을 포함하는 하우징(101)을 통해, 발광 다이오드 패키지의 방열 능력을 향상시킬 수 있다. 하우징(101)을 형성할 수 있는 물질들을 상기에 언급하였지만, 하우징(101)은 이에 제한되지 않고 다양한 물질들로 형성할 수 있다.The housing 101 may be formed of a common plastic (polymer) or ABS (acrylonitrile butadiene styrene), liquid crystalline polymer (LCP), polyamide (PA), polyphenylene sulfide (IPS), thermoplastic elastomer (TPE), or the like. It may be formed of a ceramic. When the light emitting diode chip 102 is an ultraviolet light emitting diode chip, the housing 101 may be formed of ceramic. When the housing 101 is a ceramic, the housing 101 including the ceramic may not be discolored or deteriorated by ultraviolet light emitted from the ultraviolet light emitting diode chip, thereby maintaining the reliability of the LED package. When the housing 101 is metal, the housing 101 may include two or more metal frames, and the metal frames may be insulated from each other. Through the housing 101 including the metal, it is possible to improve the heat dissipation capability of the LED package. Although the materials capable of forming the housing 101 have been mentioned above, the housing 101 may be formed of various materials without being limited thereto.
하우징(101)은 발광 다이오드 칩(102)에서 방출되는 광의 반사를 위하여 경사진 내벽을 포함할 수 있다.The housing 101 may include an inclined inner wall for reflecting light emitted from the light emitting diode chip 102.
몰딩부(104)는 높은 경도를 가지는 물질로 형성될 수 있다. 구체적으로, 몰딩부(104)의 경도는 쇼어 경도(Shore hardness)로 측정했을 시, 측정 수치는 69 내지 71이고, 인덱터(indentor) 유형은 D type일 수 있다. 몰딩부(104)의 경도를 산소 가스 투과도로 측정했을 시, 산소 가스 투과도는 100 내지 140 cc/m2/day일 수 있다. 몰딩부(104)는 고경도를 가지기 위하여, 실리콘(silicone), 에폭시(epoxy), PMMA(polymethyl methacrylate), PE(polyethylene) 및 PS(polystyrene) 중 적어도 하나를 포함하는 물질로 형성될 수 있다. The molding part 104 may be formed of a material having a high hardness. Specifically, when the hardness of the molding part 104 is measured by Shore hardness, the measured value is 69 to 71, and the indexer type may be a D type. When the hardness of the molding part 104 is measured by oxygen gas permeability, the oxygen gas permeability may be 100 to 140 cc / m 2 / day. The molding part 104 may be formed of a material including at least one of silicon, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS) to have high hardness.
몰딩부(104)는 상술한 물질과 제1 및 제2 형광체(105, 106)들의 혼합물을 이용한 사출 공정을 통해 형성할 수 있다. 또한 별도의 주형을 이용하여 제작한 다음, 이를 가압 또는 열처리하여 몰딩부(104)를 형성할 수 있다. 몰딩부(104)는 볼록 렌즈 형태, 평판 형태(미도시) 및 표면에 소정의 요철을 갖는 형태 등 다양한 형상으로 형성할 수 있다. 본 발명에 따른 발광 다이오드 패키지는 볼록 렌즈 형태를 가지는 몰딩부(104)를 개시하였지만, 몰딩부(104)의 형상은 이에 국한되지 않는다.The molding part 104 may be formed through an injection process using a mixture of the above-described material and the first and second phosphors 105 and 106. In addition, after the production using a separate mold, it may be formed by pressing or heat treatment molding portion 104. The molding part 104 may be formed in various shapes such as a convex lens shape, a flat plate shape (not shown), and a shape having predetermined irregularities on the surface thereof. Although the LED package according to the present invention discloses a molding part 104 having a convex lens shape, the shape of the molding part 104 is not limited thereto.
발광 다이오드 칩(102)은 자외선 발광 다이오드 칩 또는 청색 발광 다이오드 칩일 수 있다. 발광 다이오드 칩(102)이 청색 발광 다이오드 칩인 경우에는, 방출하는 광의 피크 파장은 410 내지 490nm 범위 내에 위치할 수 있다. 발광 다이오드 칩(102)이 방출하는 청색광의 피크 파장의 반치폭(full width at half maximum: FWHM)은 40nm 이하 일 수 있다. 본 발명에 따른 발광 다이오드 패키지는 하나의 발광 다이오드 칩(102)이 배치된 형태를 개시하였지만, 배치되는 발광 다이오드 칩(102)의 개수 및 배치 형태는 이에 제한되지 않는다.The light emitting diode chip 102 may be an ultraviolet light emitting diode chip or a blue light emitting diode chip. When the light emitting diode chip 102 is a blue light emitting diode chip, the peak wavelength of the emitted light may be in the range of 410 to 490 nm. The full width at half maximum (FWHM) of the peak wavelength of the blue light emitted from the light emitting diode chip 102 may be 40 nm or less. The light emitting diode package according to the present invention has been disclosed in which one light emitting diode chip 102 is disposed, but the number and arrangement of light emitting diode chips 102 are not limited thereto.
제1 형광체(105)는 발광 다이오드 칩(102)에 여기되어 녹색광을 방출할 수 있다. 제2 형광체(106)는 발광 다이오드 칩(102)에 여기되어 적색광을 방출할 수 있다.The first phosphor 105 may be excited by the light emitting diode chip 102 to emit green light. The second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light.
제1 형광체(105)가 방출하는 녹색광의 피크 파장은 520 내지 570nm 범위 내에 위치할 수 있다. 제1 형광체(105)는 35nm이하의 반치폭을 가지는 녹색광을 방출할 수 있다. 제1 형광체(105)는 BAM(Ba-Al-Mg) 계열의 형광체, 양자점(quantum dot) 형광체 및 불화물 계열 형광체에서 선택된 적어도 하나의 형광체를 포함할 수 있다. 상기 불화물 계열 형광체는 A2MF6:Mn4+의 화학식을 가지는 형광체일 수 있다. 상기 화학식에서 A는 Li, Na, K, Rb, Ce 및 NH4 중 하나일 수 있고, M은 Si, Nb 및 Ta 중 하나일 수 있다. 상기에 제1 형광체(105)의 종류를 서술하였지만, 본 발명에 따른 제1 형광체(105)의 종류는 이로 인해 제한되는 것은 아니다.The peak wavelength of the green light emitted by the first phosphor 105 may be in the range of 520 to 570 nm. The first phosphor 105 may emit green light having a half width of less than 35 nm. The first phosphor 105 may include at least one phosphor selected from BAM (Ba-Al-Mg) -based phosphors, quantum dot phosphors, and fluoride-based phosphors. The fluoride-based phosphor may be a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ . In the formula, A may be one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. Although the kind of the first phosphor 105 has been described above, the kind of the first phosphor 105 according to the present invention is not limited thereto.
녹색광의 반치폭이 좁을수록 높은 색 순도를 가지는 녹색광을 구현할 수 있다. 반치폭이 35㎚ 이상인 경우에는, 발광하는 광의 색 순도가 낮기 때문에 컬러 텔레비전의 방송 방식으로서 채용되고 있는 NTSC(National Television System Committee) 방식의 규격으로 정해져 있는 전체 색 재현 범위의 90% 이상을 재현하기 어렵다. 따라서, 본 발명에 따른 발광 소자가 방출하는 백색광의 90% 이상의 NTSC 색채 포화도를 구현하기 위해, 상기 제1 형광체는 35㎚ 이하의 반치폭을 가지는 녹색광을 방출한다.As the half width of the green light is narrower, green light having high color purity can be realized. When the full width at half maximum is 35 nm or more, since the color purity of light to be emitted is low, it is difficult to reproduce more than 90% of the full color reproduction range defined by the NTSC (National Television System Committee) standard adopted as a broadcasting method of color television. . Therefore, in order to implement NTSC color saturation of 90% or more of the white light emitted by the light emitting device according to the present invention, the first phosphor emits green light having a half width of 35 nm or less.
제2 형광체(106)는 발광 다이오드 칩(102)에 의해 여기되어 적색광을 방출할 수 있다. 제2 형광체(106)가 방출하는 적색광의 피크 파장은 610 내지 650㎚ 범위 내에서 위치할 수 있다. 제2 형광체(106)는 양자점(quantum dot) 형광체, 황화물계 형광체 및 불화물 계열 형광체에서 선택된 적어도 하나의 형광체를 포함할 수 있다. 불화물 계열 형광체는 A2MF6:Mn4+의 화학식을 가지는 형광체일 수 있다. 상기 화학식에서 A는 Li, Na, K, Rb, Ce 및 NH4 중 하나일 수 있고, M은 Si, Nb 및 Ta 중 하나일 수 있다. 제2 형광체(106)는 좁은 반치폭을 가지는 적색광을 방출할 수 있다. 구체적으로, 양자점 형광체의 경우에는 30 내지 40㎚의 반치폭을, 황화물계 형광체인 경우에는 65㎚ 이하의 반치폭을, 불화물 계열 형광체의 경우에는 20㎚ 이하의 반치폭을 가지는 적색광을 방출할 수 있다. 즉, 제2 형광체(106)가 불화물 계열 형광체인 경우에, 가장 좁은 반치폭을 가지는 적색광을 방출할 수 있다.The second phosphor 106 may be excited by the light emitting diode chip 102 to emit red light. The peak wavelength of the red light emitted by the second phosphor 106 may be located within a range of 610 to 650 nm. The second phosphor 106 may include at least one phosphor selected from a quantum dot phosphor, a sulfide phosphor, and a fluoride phosphor. The fluoride series phosphor may be a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ . In the formula, A may be one of Li, Na, K, Rb, Ce, and NH 4 , and M may be one of Si, Nb, and Ta. The second phosphor 106 may emit red light having a narrow half width. Specifically, red light having a half width of 30 to 40 nm for a quantum dot phosphor, a half width of 65 nm or less for a sulfide-based phosphor, and a half width of 20 nm or less for a fluoride-based phosphor can be emitted. That is, when the second phosphor 106 is a fluoride series phosphor, red light having the narrowest half width can be emitted.
도 2는 본 발명의 일 실시예에 따른 발광 다이오드 패키지가 포함하는 제2 형광체의 직경에 따른 발광 강도의 크기를 나타내는 그래프이다.2 is a graph showing the magnitude of the light emission intensity according to the diameter of the second phosphor included in the LED package according to the embodiment of the present invention.
도 2를 참조하면, 제2 형광체는 불화물 계열 형광체이고, a선은 형광체의 직경이 30㎛인 경우를, b선은 형광체의 직경이 20㎛인 경우를 나타낸다.Referring to FIG. 2, the second phosphor is a fluoride-based phosphor, a line represents a case where the diameter of the phosphor is 30 μm, and a line b represents a case where the diameter of the phosphor is 20 μm.
형광체의 직경이 30㎛인 경우에 20㎛인 경우와 비교하여, 발광 강도가 약 16% 정도 향상됨을 알 수 있다. 또한, 제2 형광체의 직경에 따른 백색광의 광량(luminous flux) 변화를 확인하기 위하여, 직경이 각각 20㎛, 25㎛ 또는 30㎛이고, 불화물 계열 형광체인 제2 형광체들과 녹색 형광체들을 조합하였다. It can be seen that the emission intensity is improved by about 16% when the diameter of the phosphor is 30 μm, compared with the case of 20 μm. In addition, in order to confirm a change in luminous flux of white light according to the diameter of the second phosphor, the diameters of 20 μm, 25 μm, or 30 μm, respectively, were combined with the second phosphors and the green phosphors, which are fluoride-based phosphors.
직경이 20㎛인 제2 형광체와 녹색 형광체를 조합한 경우의 광량(100%)을 기준으로, 직경이 25㎛인 제2 형광체와 녹색 형광체를 조합했을 때는 백색광의 광량이 102.30%로 향상됨을 알 수 있었다. 또한, 직경이 30㎛인 제2 형광체와 녹색 형광체를 조합했을 때는 백색광의 광량이 103.00%로 향상됨을 알 수 있었다.On the basis of the amount of light (100%) when the second phosphor having a diameter of 20 μm and the green phosphor are combined, the amount of white light is improved to 102.30% when the second phosphor having a diameter of 25 μm is combined with the green phosphor. Could. In addition, when the second phosphor having a diameter of 30 μm and the green phosphor were combined, it was found that the amount of white light increased to 103.00%.
따라서, 본 발명에 따른 제2 형광체가 불화물 계열 형광체인 경우에, 그 직경은 25㎛ 이상일 수 있다. 또한, 그 직경은 25㎛ 내지 40㎛일 수 있다(D50 기준). 상기 형광체의 직경 범위 내에서, 제2 형광체는 우수한 발광 강도를 나타낼 수 있고, 제2 형광체를 포함하는 발광 소자는 백색광의 광량을 향상시킬 수 있다. 제1 및 제2 형광체(105, 106)들은 도시한 바와 같이 몰딩부(104) 내부에 균일하게 분포되는 것이 바람직하며, 이에 의해 제1 형광체(105)가 여기되어 방출하는 녹색광, 제2 형광체(106)가 여기되어 방출하는 적색광 및 청색 발광 다이오드(103)가 방출하는 청색광이 고르게 혼색되어 더욱 균일한 백색광을 구현할 수 있다.Therefore, when the second phosphor according to the present invention is a fluoride series phosphor, the diameter thereof may be 25 μm or more. Also, the diameter may be 25 μm to 40 μm (based on D50). Within the diameter range of the phosphor, the second phosphor may exhibit excellent emission intensity, and the light emitting device including the second phosphor may improve the amount of white light. As shown in the drawing, the first and second phosphors 105 and 106 are preferably uniformly distributed in the molding part 104, whereby the green and second phosphors are excited and emitted by the first phosphor 105. The red light emitted by the 106 and the blue light emitted by the blue light emitting diode 103 may be uniformly mixed to realize more uniform white light.
제1 및 제2 형광체(105, 106)들은 발광 다이오드 칩(102) 주위에 인접하게 배치되거나, 이격되어 배치될 수 있다. 제1 및 제2 형광체(105, 106)들이 이격되어 배치된 경우에는 발광 다이오드 칩(102)으로 인한 열화 현상을 방지할 수 있다. The first and second phosphors 105 and 106 may be disposed adjacent to or spaced apart from the light emitting diode chip 102. When the first and second phosphors 105 and 106 are spaced apart from each other, deterioration due to the LED chip 102 may be prevented.
도 3은 본 발명의 일 실시예에 따른 발광 다이오드 패키지가 포함하는 몰딩부의 시간에 따른 광유지율의 변화를 나타내는 그래프이다.3 is a graph illustrating a change in light retention rate with time of a molding part included in a light emitting diode package according to an exemplary embodiment of the present invention.
도 3을 참조하면, a선은 산소 가스 투과도가 130cc/m2/day인 경우를, b선은 산소 가스 투과도가 260cc/m2/day인 경우를, c선은 산소 가스 투과도가 520cc/m2/day인 경우를 나타낸다.Referring to FIG. 3, line a indicates oxygen gas permeability of 130 cc / m 2 / day, line b indicates oxygen gas permeability of 260 cc / m 2 / day, line c indicates oxygen gas permeability of 520 cc / m. 2 / day.
산소 가스 투과도의 크기가 클수록 몰딩부의 경도가 낮음을 의미하므로, 몰딩부의 경도가 높을수록, 발광 다이오드 패키지의 시간에 따른 광유지율이 높음을 알 수 있다. 산소 가스 투과도가 130cc/m2/day인 a선을 다시 검토하면, 1000시간 이후의 광유지율이 처음과 동일한 100%임을 알 수 있다. 본 발명에 따른 발광 다이오드 패키지가 포함하는 몰딩부의 산소 가스 투과도는 100 내지 140cc/m2/day이므로, 장시간 동일한 강도의 광을 유지할 수 있다.The larger the oxygen gas permeability, the lower the hardness of the molding part. Therefore, the higher the hardness of the molding part, the higher the light retention with time of the LED package. Reviewing the a line with the oxygen gas permeability of 130 cc / m 2 / day, it can be seen that the light retention after 1000 hours is 100% as the first time. Since the oxygen gas permeability of the molding part included in the LED package according to the present invention is 100 to 140 cc / m 2 / day, light of the same intensity may be maintained for a long time.
도 4는 본 발명의 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다. 도 4를 참조하면, 발광 다이오드 패키지는 하우징(101), 발광 다이오드 칩(102), 몰딩부(104), 제1 형광체(105), 제2 형광체(106) 및 버퍼부(109)를 포함한다. 본 실시예에 따른 발광 다이오드 패키지는 버퍼부(109)를 제외하면, 상기 일 실시예에 따른 발광 다이오드 패키지와 대체로 유사하며, 따라서 중복되는 설명은 생략한다.4 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 4, the LED package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, and a buffer unit 109. . The light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the buffer unit 109, and thus a redundant description thereof is omitted.
버퍼부(109)는 발광 다이오드 칩(102)과 몰딩부(104) 사이에 배치될 수 있다. 버퍼부는 silicone, epoxy, PMMA(polymethyl methacrylate), PE(polyethylene) 및 PS(polystyrene) 중 적어도 하나를 포함하는 물질로 형성될 수 있다. 버퍼부(109)의 경도는 쇼어 경도(Shore hardness)로 측정했을 시, 측정 수치는 59 내지 61이고, 인덱터(indentor) 유형은 A type일 수 있다. 즉, 버퍼부(109)의 경도는 몰딩부(104)보다 작을 수 있다. 따라서, 버퍼부(109)의 산소 가스 투과도는 몰딩부(104)보다 클 수 있다. 버퍼부(109)을 이용하여, 발광 다이오드 칩(102)에서 발생하는 열로 인한 몰딩부(104)의 열적 스트레스를 방지할 수 있다. 본 실시예에 따른 버퍼부(109)는 발광 다이오드 칩(102) 주변 영역에 배치된 경우를 개시하였지만, 버퍼부(109)는 하우징(101)의 좌측벽과 우측벽 모두와 접하도록 넓은 영역에 배치될 수 도 있다.The buffer unit 109 may be disposed between the LED chip 102 and the molding unit 104. The buffer part may be formed of a material including at least one of silicone, epoxy, polymethyl methacrylate (PMMA), polyethylene (PE), and polystyrene (PS). When the hardness of the buffer unit 109 is measured by Shore hardness, the measured value is 59 to 61, and the indexer type may be A type. That is, the hardness of the buffer unit 109 may be smaller than the molding unit 104. Accordingly, the oxygen gas permeability of the buffer unit 109 may be greater than that of the molding unit 104. By using the buffer unit 109, thermal stress of the molding unit 104 due to heat generated from the light emitting diode chip 102 may be prevented. Although the buffer unit 109 according to the present embodiment has been disclosed in the case where the light emitting diode chip 102 is disposed around the buffer unit 109, the buffer unit 109 is disposed in a wide area so as to be in contact with both the left and right walls of the housing 101. It may be arranged.
도 5은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다. 도 5를 참조하면, 발광 다이오드 패키지는 하우징(101), 발광 다이오드 칩(102), 몰딩부(104), 제1 형광체(105), 제2 형광체(106), 리플렉터(111) 및 베리어 리플렉터(112)를 포함할 수 있다. 본 실시예에 따른 발광 다이오드 패키지는 리플렉터(111) 및 베리어 리플렉터(112)를 제외하면, 상기 일 실시예에 따른 발광 다이오드 패키지와 대체로 유사하며, 따라서 중복되는 설명은 생략한다.5 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 5, the light emitting diode package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, a reflector 111, and a barrier reflector ( 112). The LED package according to the present exemplary embodiment is generally similar to the LED package according to the exemplary embodiment except for the reflector 111 and the barrier reflector 112, and thus, a redundant description thereof will be omitted.
리플렉터(111)는 발광 다이오드 칩(102)과 이격되어 측면에 배치될 수 있다. 리플렉터(111)는 발광 다이오드 칩(102), 제1 및 2 형광체(105, 106)에서 방출되는 광의 반사를 극대화하여 발광 효율을 증대시킬 수 있다. 리플렉터(111)는 반사 코팅 필름 및 반사 코팅 물질층 중 어느 하나로 형성될 수 있다. 리플렉터(111)는 내열성 및 내광성이 우수한 무기 재료, 유기 재료, 금속 재료 및 금속 산화물 재료 중에서 적어도 하나로 형성될 수 있다. 일례로, 리플렉터(111)는 알루미늄(Al), 은(Ag), 금(Au), 이산화 티타늄(TiO2) 등과 같이 높은 반사율을 가지는 금속 또는 금속 산화물을 포함하여 구성될 수 있다. 리플렉터(111)는 하우징(101) 상에 금속 또는 금속 산화물을 증착 또는 코팅하여 형성할 수 있으며, 금속 잉크를 인쇄하여 형성할 수도 있다. 또한, 리플렉터(111)는 하우징(101) 상에 반사 필름 또는 반사 시트(sheet)를 접착하여 형성할 수도 있다.The reflector 111 may be spaced apart from the light emitting diode chip 102 and disposed on a side surface thereof. The reflector 111 may increase light emission efficiency by maximizing reflection of light emitted from the light emitting diode chip 102 and the first and second phosphors 105 and 106. The reflector 111 may be formed of any one of a reflective coating film and a reflective coating material layer. The reflector 111 may be formed of at least one of an inorganic material, an organic material, a metal material, and a metal oxide material having excellent heat resistance and light resistance. For example, the reflector 111 may include a metal or a metal oxide having high reflectance such as aluminum (Al), silver (Ag), gold (Au), titanium dioxide (TiO 2 ), or the like. The reflector 111 may be formed by depositing or coating a metal or metal oxide on the housing 101, or may be formed by printing a metal ink. In addition, the reflector 111 may be formed by adhering a reflective film or a reflective sheet on the housing 101.
베리어 리플렉터(112)는 리플렉터(111)를 덮을 수 있다. 베리어 리플렉터(112)는 발광 다이오드 칩(102)에서 방출되는 열로 인한 리플렉터(111)의 열화 등을 방지할 수 있다. 베리어 리플렉터(112)는 내광성 및 반사율이 높은 무기 재료 또는 금속 재료로 형성될 수 있다.The barrier reflector 112 may cover the reflector 111. The barrier reflector 112 may prevent deterioration of the reflector 111 due to heat emitted from the light emitting diode chip 102. The barrier reflector 112 may be formed of an inorganic material or a metal material having high light resistance and high reflectance.
도 6은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다. 도 6을 참조하면, 발광 소자는 하우징(101), 발광 다이오드 칩(102), 몰딩부(104), 제1 형광체(105) 및 제2 형광체(106)를 포함하고, 몰딩부(104)는 제1 몰딩부(104b) 및 제2 몰딩부(104a)를 더 포함할 수 있다. 본 실시예에 따른 발광 다이오드 패키지는 제1 몰딩부(104b) 및 제2 몰딩부(104a)를 제외하면, 상기 일 실시예에 따른 발광 다이오드 패키지와 대체로 유사하며, 따라서 중복되는 설명은 생략한다.6 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 6, the light emitting device includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, and a second phosphor 106. The apparatus may further include a first molding part 104b and a second molding part 104a. The light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the first molding part 104b and the second molding part 104a, and thus a redundant description thereof will be omitted.
제1 몰딩부(104b)는 발광 다이오드 칩(102)을 덮을 수 있다. 제2 몰딩부(104a)는 제1 몰딩부(104b)를 덮을 수 있다. 제1 몰딩부(104b)는 제2 몰딩부(104a)와 동일한 경도를 가지는 물질로 형성되거나, 다른 경도를 가지는 물질로 형성될 수 있다. 제1 몰딩부(104b)의 경도는 제2 몰딩부(104a)보다 낮을 수 있고, 이 경우, 상술한 실시예의 버퍼부(109)와 동일하게, 발광 다이오드 칩(102)에 인한 열 스트레스를 완화할 수 있다. The first molding part 104b may cover the light emitting diode chip 102. The second molding part 104a may cover the first molding part 104b. The first molding part 104b may be formed of a material having the same hardness as the second molding part 104a or may be formed of a material having a different hardness. The hardness of the first molding part 104b may be lower than that of the second molding part 104a. In this case, similar to the buffer part 109 of the above-described embodiment, thermal stress due to the light emitting diode chip 102 may be alleviated. can do.
제1 몰딩부(104b)는 적색광을 방출하는 제2 형광체(106)를 함유할 수 있다. 제2 몰딩부(104a)는 녹색광을 방출하는 제1 형광체(105)를 함유할 수 있다. 장파장을 방출하는 형광체들을 하부에 배치하고, 단파장을 방출하는 형광체들을 상부에 배치하여, 제1 형광체(105)에서 발광된 녹색광이 제2 형광체(106)에 다시 흡수되어 손실되는 것을 방지할 수 있다. The first molding part 104b may contain a second phosphor 106 that emits red light. The second molding part 104a may contain the first phosphor 105 that emits green light. The phosphors emitting long wavelengths may be disposed below and the phosphors emitting short wavelengths may be disposed above to prevent the green light emitted from the first phosphor 105 from being absorbed and lost by the second phosphor 106 again. .
도 7은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다. 도 7을 참조하면, 발광 다이오드 패키지는 하우징(101), 발광 다이오드 칩(102), 몰딩부(104), 제1 형광체(105), 제2 형광체(106) 및 형광체 플레이트(118)를 포함한다. 본 실시예에 따른 발광 다이오드 패키지는 형광체 플레이트(118)를 제외하면, 상기 일 실시예에 따른 발광 다이오드 패키지와 대체로 유사하며, 따라서 중복되는 설명은 생략한다.7 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 7, the light emitting diode package includes a housing 101, a light emitting diode chip 102, a molding part 104, a first phosphor 105, a second phosphor 106, and a phosphor plate 118. . The light emitting diode package according to the present exemplary embodiment is generally similar to the light emitting diode package according to the exemplary embodiment except for the phosphor plate 118, and thus, description thereof will not be repeated.
형광체 플레이트(118)는 발광 다이오드 칩(102)과 이격되어 몰딩부(104) 상부에 배치되고, 제1 및 제2 형광체(105, 106)들을 포함할 수 있다. 상기 형광체 플레이트(118)은 본 발명의 일 실시예에 따른 몰딩부(104)와 동일한 물질 또는 높은 경도를 가지는 물질로 형성될 수 있다.The phosphor plate 118 is spaced apart from the light emitting diode chip 102 and disposed on the molding part 104, and may include first and second phosphors 105 and 106. The phosphor plate 118 may be formed of the same material as the molding part 104 or a material having a high hardness.
제1 및 제2 형광체(105, 106)들이 발광 다이오드 칩(102)와 이격되어 배치되기 때문에, 제1 및 제2 형광체(105, 106)들 및 형광체 플레이트(118)의 열 또는 광에 의한 손상을 줄일 수 있다. 따라서, 제1 및 제2 형광체(105, 106)들의 신뢰성을 향상시킬 수 있다. Since the first and second phosphors 105 and 106 are spaced apart from the light emitting diode chip 102, damage caused by heat or light of the first and second phosphors 105 and 106 and the phosphor plate 118 is caused. Can be reduced. Therefore, the reliability of the first and second phosphors 105 and 106 can be improved.
형광체 플레이트(118)와 발광 다이오드 칩(102) 사이에는 몰딩부(104) 대신에 빈공간이 형성될 수 있다. An empty space may be formed between the phosphor plate 118 and the light emitting diode chip 102 instead of the molding part 104.
도 8은 본 발명의 또 다른 실시예에 따른 발광 다이오드 패키지를 나타내는 단면도이다. 도 8을 참조하면, 발광 다이오드 패키지는 하우징(101), 발광 다이오드 칩(102), 제1 코팅 형광체(107), 제2 코팅 형광체(108) 및 몰딩부(104)를 포함한다. 또한, 제1 코팅 형광체(107)는 제1 형광체(105) 및 코팅층(105a)을 포함한다. 본 실시예에 따른 발광 다이오드 패키지는 제1 코팅 형광체(107) 및 제2 코팅 형광체(108)을 제외하면, 상기 일 실시예에 따른 발광 다이오드 패키지와 대체로 유사하며, 따라서 중복되는 설명은 생략한다.8 is a cross-sectional view showing a light emitting diode package according to another embodiment of the present invention. Referring to FIG. 8, the LED package includes a housing 101, a light emitting diode chip 102, a first coating phosphor 107, a second coating phosphor 108, and a molding part 104. In addition, the first coating phosphor 107 includes a first phosphor 105 and a coating layer 105a. The light emitting diode package according to the present exemplary embodiment is substantially similar to the light emitting diode package according to the exemplary embodiment except for the first coating phosphor 107 and the second coating phosphor 108, and thus, a redundant description thereof will be omitted.
제1 코팅 형광체(107)는 제1 형광체(105)와 제1 형광체(105)를 감싸는 코팅층(105a)을 포함할 수 있다. 도시하지는 않았지만, 제2 코칭 형광체(108)역시 제2 형광체(106)와 제2 형광체(106)를 감싸는 코팅층(105a)을 포함할 수 있다.The first coating phosphor 107 may include a first phosphor 105 and a coating layer 105a surrounding the first phosphor 105. Although not shown, the second coaching phosphor 108 may also include a second phosphor 106 and a coating layer 105a surrounding the second phosphor 106.
코팅층(105a)은 제1 및 제2 형광체(105, 106)들의 표면에 배치되어, 수분과의 접촉을 차단할 수 있다. 코팅층(105a)은 제1 및 제2 형광체(105, 106)들의 표면과 결합하여, 제1 및 제2 코팅 형광체(107, 108)들의 표면을 소수성으로 만들 수 있다.The coating layer 105a may be disposed on the surfaces of the first and second phosphors 105 and 106 to block contact with moisture. The coating layer 105a may combine with the surfaces of the first and second phosphors 105 and 106 to render the surfaces of the first and second coating phosphors 107 and 108 hydrophobic.
코팅층(105a)은 실란계 코팅물질을 포함할 수 있다. 실란계 코팅 물질은 메틸화 실란 또는 할로겐화 실란일 수 있다.The coating layer 105a may include a silane-based coating material. The silane-based coating material may be methylated silane or halogenated silane.
메틸화 실란은 실란의 일부 그룹이 메틸 그룹으로 치환된 실리콘 함유 화합물이다. 할로겐화 실란은 불소(F), 염소(Cl), 브롬(Br) 및 요오드(I) 중 하나를 포함할 수 있다. 또한, 할로겐화 실란은 불소(F)를 포함하는 불소 실란일 수 있다.Methylated silanes are silicone containing compounds in which some groups of silanes are substituted with methyl groups. The halogenated silane may comprise one of fluorine (F), chlorine (Cl), bromine (Br) and iodine (I). In addition, the halogenated silane may be a fluorine silane including fluorine (F).
불소 실란이란, 적어도 하나의 불소 원자가 치환된 하이드로카빌(hydrocarbyl)그룹과 구핵 원자에 의한 변위가 가능한 반응성 하이드로카르빌옥시(hydrocarbyloxy) 그룹을 포함하는 실리콘 함유 화합물이다. 하이드로카빌 그룹은 알칸, 알켄, 알킨 및 아릴기와 같은 탄소 및 수소를 포함하는 선형, 가지형, 고리형 그룹이다. 하이드로카빌 그룹은 할로겐(halogen) 그룹, 사이아노(cyano) 그룹, 케톤(keto) 그룹, 에스터(ester) 그룹, 히드록시(hydroxyl) 그룹, 카르복시(carboxyl) 그룹, 산소(oxygen), 황(sulfur) 및 질소(nitrogen) 중 적어도 하나를 포함하거나, 이들로 일부가 치환될 수 있다. 또한, 치환가능한 수소가 불소화된 하이드로카빌 그룹을 퍼플루오르 하이드로카빌(perfluorooctyl triethoxysilane)이라 한다.Fluorine silane is a silicon-containing compound containing a hydrocarbyl group substituted with at least one fluorine atom and a reactive hydrocarbyloxy group capable of displacement by nucleophilic atoms. Hydrocarbyl groups are linear, branched, cyclic groups containing carbon and hydrogen such as alkanes, alkenes, alkynes, and aryl groups. Hydrocarbyl groups include halogen group, cyano group, keto group, ester group, hydroxyl group, carboxyl group, oxygen, sulfur ) And nitrogen, or some of them may be substituted. Substitutable hydrogen fluorinated hydrocarbyl groups are also referred to as perfluorooctyl triethoxysilanes.
[화학식 1] [ Formula 1 ]
RfSi(OR)3 R f Si (OR) 3
화학식 1은 불소 실란의 일 실시예에 따른 화학식을 나타낸다. 여기서, Rf는 적어도 하나의 불소 원자를 갖는 C4-C16 하이드로카빌 그룹이며, R은 C1-C6 하이드로카빌 그룹이다.Formula 1 represents a chemical formula according to one embodiment of fluorine silane. Wherein R f is a C4-C16 hydrocarbyl group having at least one fluorine atom, and R is a C1-C6 hydrocarbyl group.
[화학식 2] [ Formula 2 ]
Rf'CH2CH2 Si(OR)3 R f 'CH 2 CH 2 Si (OR) 3
화학식 2는 불소 실란의 다른 실시예에 따른 화학식을 나타낸다. 여기서, Rf'는 C4-C14 퍼플루오르 하이드로카빌(perfluorooctyl triethoxysilane)이며, R은 메틸 또는 에틸이다.Formula 2 represents a chemical formula according to another embodiment of fluorine silane. Wherein R f ′ is C4-C14 perfluorooctyl triethoxysilane and R is methyl or ethyl.
[화학식 3] [ Formula 3 ]
CF3CF2CF2CF2CF2CF2CH2CH2Si(OCH2CH3)3 CF 3 CF 2 CF 2 CF 2 CF 2 CF 2 CH 2 CH 2 Si (OCH 2 CH 3 ) 3
화학식 3은 불소 실란의 또 다른 실시예에 따른 화학식을 나타낸다. 화학식 3에 따른 불소 실란은 tridecafluorooctyltriethoxy silane이다.Formula 3 represents a chemical formula according to another embodiment of fluorine silane. Fluorine silane according to Formula 3 is tridecafluorooctyltriethoxy silane.
이하에서는, 구체적으로, 불소 실란으로 제1 및 제2 형광체(105, 106)들 각각을 덮는 코팅층(105a)을 형성하는 과정에 대해서 화학식 3을 기준으로 서술한다. Hereinafter, a process of forming the coating layer 105a covering each of the first and second phosphors 105 and 106 with fluorine silane will be described in detail with reference to Chemical Formula 3.
먼저, 불소 실란이 포함하는 하이드로카르빌옥시 그룹과 물(H2O)이 반응하여 3개의 에탄올(C2H5OH)이 불소 실란으로부터 생성된다. 3개의 에탄올이 제거되고, 물(H2O)로부터 3개의 H와 결합된 불소 실란은, 형광체 표면의 히드록시기(-OH)와 결합하면서, 물(H2O)이 생성되는 반응을 수행한다. 상기 결합을 통하여, 형광체 표면에 소수성의 코팅층이 형성될 수 있다.First, the hydrocarbyloxy group included in the fluorine silane and water (H 2 O) react to form three ethanol (C 2 H 5 OH) from the fluorine silane. 3 of ethanol are removed, the water and the fluorine silane coupling 3 from the H (H 2 O) is, as combined with the hydroxy group (-OH) of the phosphor surface, and carrying out the reaction are water (H 2 O) is produced. Through the bonding, a hydrophobic coating layer may be formed on the surface of the phosphor.
이상으로, 불소 실란이 형광체 표면에 코팅층을 형성하는 반응을 설명하였지만, 이는 불소 실란의 경우에 국한되는 것이 아니라, 실란을 포함하는 실란계 코팅물질 모두에 적용될 수 있다.As described above, the reaction in which the fluorine silane forms a coating layer on the surface of the phosphor has been described, but this is not limited to the case of the fluorine silane, but may be applied to all silane-based coating materials including silane.
본 실시예에 따르면, 코팅된 제1 및 제2 코팅 형광체(107, 108)들은 그 표면이 소수성이므로, 내부에 포함하는 제1 및 제2 형광체(105, 106)들을 수분으로부터 보호할 수 있다.According to the present exemplary embodiment, since the coated first and second coated phosphors 107 and 108 are hydrophobic on their surfaces, the first and second phosphors 105 and 106 included therein may be protected from moisture.
이상의 설명은 본 발명의 기술 사상을 예시적으로 설명한 것에 불과한 것으로서, 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 본 발명의 본질적인 특성에서 벗어나지 않는 범위 내에서 다양한 수정, 변경 및 치환이 가능할 것이다. 따라서, 본 발명에 개시된 실시예 및 첨부된 도면들은 본 발명의 기술 사상을 한정하기 위한 것이 아니라 설명하기 위한 것이고, 이러한 실시예 및 첨부된 도면에 의하여 본 발명의 기술 사상의 범위가 한정되는 것은 아니다. 본 발명의 보호 범위는 아래의 청구범위에 의하여 해석되어야 하며, 그와 동등한 범위 내에 있는 모든 기술 사상은 본 발명의 권리범위에 포함되는 것으로 해석되어야 할 것이다.The above description is merely illustrative of the technical idea of the present invention, and various modifications, changes, and substitutions may be made by those skilled in the art without departing from the essential characteristics of the present invention. will be. Accordingly, the embodiments disclosed in the present invention and the accompanying drawings are not intended to limit the technical spirit of the present invention but to describe the present invention, and the scope of the technical idea of the present invention is not limited by the embodiments and the accompanying drawings. . The protection scope of the present invention should be interpreted by the following claims, and all technical ideas within the equivalent scope should be interpreted as being included in the scope of the present invention.

Claims (23)

  1. 하우징;housing;
    상기 하우징 내에 배치되는 적어도 하나의 발광 다이오드 칩;At least one light emitting diode chip disposed in the housing;
    상기 적어도 하나의 발광 다이오드 칩을 덮는 몰딩부;A molding part covering the at least one light emitting diode chip;
    상기 적어도 하나의 발광 다이오드 칩에 의해 여기되어 녹색광을 방출하는 제1 형광체; 및A first phosphor that is excited by the at least one LED chip and emits green light; And
    상기 적어도 하나의 발광 다이오드 칩에 의해 여기되어 적색광을 방출하는 제2 형광체를 포함하되,A second phosphor that is excited by the at least one light emitting diode chip and emits red light,
    상기 몰딩부는 140cc/m2/day 이하의 산소 가스 투과도를 가지고,The molding part has an oxygen gas permeability of 140 cc / m 2 / day or less,
    상기 제2 형광체는 20㎚ 이하의 반치폭을 가지는 적색광을 방출하는 발광 다이오드 패키지.The second phosphor emits red light having a half width of 20 nm or less.
  2. 청구항 1에 있어서,The method according to claim 1,
    상기 몰딩부는 100 내지 140cc/m2/day의 산소 가스 투과도를 가지는 발광 다이오드 패키지.The molding unit has a light emitting diode package having an oxygen gas permeability of 100 to 140 cc / m 2 / day.
  3. 청구항 1에 있어서,The method according to claim 1,
    상기 제2 형광체는 A2MF6: Mn4+의 화학식을 가지는 형광체이고, 상기 A는 Li, Na, K, Rb, Ce 및 NH4 중 하나이고, M은 Si, Nb 및 Ta 중 하나인 발광 다이오드 패키지.The second phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M is one of Si, Nb, and Ta. Diode package.
  4. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 형광체는 BAM 계열 형광체 및 양자점 형광체 중 적어도 하나인 발광 다이오드 패키지.The first phosphor is at least one of a BAM series phosphor and a quantum dot phosphor.
  5. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 형광체의 녹색광의 피크 파장은 520 내지 570nm 범위 내에 위치하고,The peak wavelength of the green light of the first phosphor is located within the range of 520 to 570 nm,
    상기 제2 형광체의 적색광의 피크 파장은 610 내지 650nm 범위 내에 위치하는 발광 다이오드 패키지.The peak wavelength of the red light of the second phosphor is located in the range of 610 to 650nm.
  6. 청구항 1에 있어서,The method according to claim 1,
    상기 몰딩부는 실리콘, 에폭시, PMMA, PE 및 PS 중 적어도 하나를 포함하는 발광 다이오드 패키지.The molding unit includes at least one of silicon, epoxy, PMMA, PE and PS.
  7. 청구항 1에 있어서,The method according to claim 1,
    상기 몰딩부와 상기 적어도 하나의 발광 다이오드 칩 사이에 배치되는 버퍼부를 더 포함하되,Further comprising a buffer disposed between the molding portion and the at least one light emitting diode chip,
    상기 버퍼부는 상기 몰딩부보다 높은 산소 투과도를 가지는 발광 다이오드 패키지.The buffer unit has a light emitting diode package having a higher oxygen transmittance than the molding unit.
  8. 청구항 1에 있어서,The method according to claim 1,
    상기 제2 형광체는 25 내지 40㎛의 직경을 가지는 발광 다이오드 패키지.The second phosphor has a diameter of 25 to 40㎛ light emitting diode package.
  9. 청구항 1에 있어서,The method according to claim 1,
    상기 적어도 하나의 발광 다이오드 칩은 청색 발광 다이오드 칩 및 자외선 발광 다이오드 칩 중 적어도 하나를 포함하는 발광 다이오드 패키지.The at least one light emitting diode chip includes at least one of a blue light emitting diode chip and an ultraviolet light emitting diode chip.
  10. 청구항 1에 있어서,The method according to claim 1,
    상기 하우징은 상기 적어도 하나의 발광 다이오드 칩에서 방출된 광을 반사하는 리플렉터를 포함하는 발광 다이오드 패키지.The housing comprises a reflector for reflecting light emitted from the at least one LED chip.
  11. 청구항 10에 있어서,The method according to claim 10,
    상기 하우징은 상기 리플렉터를 덮는 베리어 리플렉터를 더 포함하는 발광 다이오드 패키지.The housing further comprises a barrier reflector covering the reflector.
  12. 청구항 1에 있어서,The method according to claim 1,
    상기 몰딩부는 상기 적어도 하나의 발광 다이오드 칩을 덮는 제1 몰딩부; 및 The molding part may include a first molding part covering the at least one light emitting diode chip; And
    상기 제1 몰딩부를 덮는 제2 몰딩부를 포함하되,A second molding part covering the first molding part,
    상기 제1 몰딩부는 상기 제2 형광체를 함유하고,The first molding part contains the second phosphor,
    상기 제2 몰딩부는 상기 제1 형광체를 함유하는 발광 다이오드 패키지.The second molding portion is a light emitting diode package containing the first phosphor.
  13. 청구항 1에 있어서,The method according to claim 1,
    상기 몰딩부 상에 배치되는 형광체 플레이트를 더 포함하고,Further comprising a phosphor plate disposed on the molding portion,
    상기 형광체 플레이트는 상기 제1 및 제2 형광체를 함유하는 발광 다이오드 패키지.The phosphor plate includes the first and second phosphors.
  14. 청구항 1에 있어서,The method according to claim 1,
    상기 발광 다이오드 칩, 상기 제1 형광체 및 제2 형광체에서 방출되는 광의 합성에 의해 90% 이상의 NTSC(national television system committee) 색채 포화도를 갖는 백색광을 방출하는 발광 다이오드 패키지.A light emitting diode package emitting white light having a national television system committee (NTSC) color saturation of 90% or more by synthesizing light emitted from the light emitting diode chip, the first phosphor, and the second phosphor.
  15. 청구항 1에 있어서,The method according to claim 1,
    상기 제1 형광체 및 상기 제2 형광체 중 적어도 하나의 표면에 형성된 코팅층을 더 포함하는 발광 다이오드 패키지.The LED package of claim 1, further comprising a coating layer formed on the surface of at least one of the first phosphor and the second phosphor.
  16. 청구항 15에 있어서,The method according to claim 15,
    상기 코팅층은 실란계 코팅물질을 포함하는 발광 다이오드 패키지.The coating layer is a light emitting diode package comprising a silane-based coating material.
  17. 청구항 16에 있어서,The method according to claim 16,
    상기 실란계 코팅물질은 할로겐화 실란 또는 메틸화 실란인 발광 다이오드 패키지.The silane based coating material is a halogenated silane or methylated silane.
  18. 청구항 17에 있어서,The method according to claim 17,
    상기 할로겐화 실란은 불소 실란인 발광 다이오드 패키지.The halogenated silane is a fluorine silane light emitting diode package.
  19. 하우징;housing;
    상기 하우징 내에 배치되는 발광 다이오드 칩;A light emitting diode chip disposed in the housing;
    상기 발광 다이오드 칩에 의해 여기되는 적어도 하나의 형광체를 포함하고,At least one phosphor excited by the light emitting diode chip,
    상기 형광체는 25㎛ 이상의 직경을 가지고, 20㎚ 이하의 반치폭을 가지는 적색광을 방출하는 발광 다이오드 패키지.The phosphor has a diameter of 25㎛ or more, and emits red light having a half width of less than 20nm.
  20. 청구항 19에 있어서,The method according to claim 19,
    상기 형광체는 A2MF6: Mn4+의 화학식을 가지는 형광체이고, 상기 A는 Li, Na, K, Rb, Ce 및 NH4 중 하나이고, M은 Si, Nb 및 Ta 중 하나인 발광 다이오드 패키지.The phosphor is a phosphor having a chemical formula of A 2 MF 6 : Mn 4+ , wherein A is one of Li, Na, K, Rb, Ce, and NH 4 , and M is one of Si, Nb, and Ta. .
  21. 청구항 19에 있어서,The method according to claim 19,
    상기 형광체는 25 내지 40㎛의 직경을 가지는 발광 다이오드 패키지.The phosphor has a light emitting diode package having a diameter of 25 to 40㎛.
  22. 하우징;housing;
    상기 하우징 내에 배치되는 발광 다이오드 칩;A light emitting diode chip disposed in the housing;
    상기 발광 다이오드 칩에 의해 여기되는 적어도 하나의 형광체; 및At least one phosphor excited by the light emitting diode chip; And
    상기 형광체를 감싸는 코팅층을 포함하고,Including a coating layer surrounding the phosphor,
    상기 코팅층은 실란계 코팅물질인 발광 다이오드 패키지.The coating layer is a silane-based coating material LED package.
  23. 청구항 22에 있어서,The method according to claim 22,
    상기 실란계 코팅물질은 메틸화 실란 또는 할로겐화 실란을 포함하는 발광 다이오드 패키지.The silane-based coating material comprises a methylated silane or a halogenated silane.
PCT/KR2015/001715 2014-02-28 2015-02-23 Light-emitting diode package WO2015130055A2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105845810A (en) * 2016-03-30 2016-08-10 深圳市聚飞光电股份有限公司 Green-light quantum dot-based method for manufacturing high-color-gamut white-light LED lamp bead
CN105870302A (en) * 2016-03-30 2016-08-17 深圳市聚飞光电股份有限公司 Package method for high-gamut white-light quantum-dot light emitting diode (LED)
CN106941128A (en) * 2016-01-05 2017-07-11 三星电子株式会社 White light emitting device and display device

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JP4140157B2 (en) * 1999-12-28 2008-08-27 東芝ライテック株式会社 Illumination light source and illumination device using light emitting diode
JP4960645B2 (en) * 2006-03-30 2012-06-27 京セラ株式会社 Wavelength converter and light emitting device
KR100841171B1 (en) * 2006-10-28 2008-06-24 삼성전기주식회사 Method for controlling fluidity of phosphor, phosphor and phosphor paste
JP2011029497A (en) * 2009-07-28 2011-02-10 Mitsubishi Chemicals Corp White light emitting device and illumination apparatus using the same
KR101265094B1 (en) * 2011-08-09 2013-05-16 한국과학기술연구원 White light emitting diode and method for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106941128A (en) * 2016-01-05 2017-07-11 三星电子株式会社 White light emitting device and display device
CN105845810A (en) * 2016-03-30 2016-08-10 深圳市聚飞光电股份有限公司 Green-light quantum dot-based method for manufacturing high-color-gamut white-light LED lamp bead
CN105870302A (en) * 2016-03-30 2016-08-17 深圳市聚飞光电股份有限公司 Package method for high-gamut white-light quantum-dot light emitting diode (LED)

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