WO2015127017A1 - Faisceau ionique combiné et appareil de pulvérisation cathodique - Google Patents

Faisceau ionique combiné et appareil de pulvérisation cathodique Download PDF

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Publication number
WO2015127017A1
WO2015127017A1 PCT/US2015/016519 US2015016519W WO2015127017A1 WO 2015127017 A1 WO2015127017 A1 WO 2015127017A1 US 2015016519 W US2015016519 W US 2015016519W WO 2015127017 A1 WO2015127017 A1 WO 2015127017A1
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WO
WIPO (PCT)
Prior art keywords
electrode
magnetic field
sputtering apparatus
magnet
generating system
Prior art date
Application number
PCT/US2015/016519
Other languages
English (en)
Inventor
David Appler GLOCKER
Original Assignee
Isoflux Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Isoflux Incorporated filed Critical Isoflux Incorporated
Publication of WO2015127017A1 publication Critical patent/WO2015127017A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/354—Introduction of auxiliary energy into the plasma
    • C23C14/355—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3444—Associated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H01J2237/3146—Ion beam bombardment sputtering

Definitions

  • the field of technology is magnetron sputtering systems that utilize an electrode that serves either as a source of sputtered material or an anode in an ion source, or alternately as both.
  • Magnetron sputtering is a low pressure physical vapor deposition (PVD) process that is widely used to deposit thin coatings for a variety of applications.
  • Sputtering relies on the bombardment of a source of material, known as the target, by energetic ions that are produced in a glow discharge plasma. The energetic ions liberate atoms at the surface of the target, which then accumulate on a substrate to form a coating.
  • the target is held at a voltage that is negative with respect to the plasma.
  • a frusto-conical sputtering magnetron 10 has a conical target 12 formed of any maternal suitable for being sputter deposited on facing surface 14 of a substrate 16, for example, metals such as aluminum, gold, and silver.
  • substrate 16 may be a disk having a radius R, the disk being disposed at a spacing 36 from target 12 and being coaxial with and orthogonal to axis 17 of target 12.
  • Backing and supporting target 12 is a cooling jacket 18 having a coolant passageway 20 for circulation of a coolant liquid such as water.
  • Jacket 18 also serves as an electrode, typically a cathode, for generation of an electric field and plasma for sputtering in a fashion well known to those skilled in the art and therefore not illustrated herein.
  • an electrode typically a cathode
  • no bonding is provided between target 12 and jacket 18, since the target expands and thereby clamps tightly to the backing jacket due to temperature rise in the target which occurs during sputtering.
  • Upper and lower wings 22 and 24 are reverse cones which are preferably substantially orthogonal to the inner surface of target 12 which capture target 12 and jacket 18 therebetween.
  • Wings 22 and 24 extend both inward and outward of target 12 and are physically connected outboard of jacket 18 by one or more magnets 26 to form a magnetic cage 27.
  • Magnet 26 may be a continuous conical magnet or a conical cage formed of a plurality of individual magnets.
  • Plasma confinement of the sputtering surface 13 of target 12 is achieved by a combination of wings 22 and 24, which are maintained at the target potential and a magnetic field 28 whose component parallel to the target surface is essentially uniform.
  • Outer anode 30 and inner anode 30" are electrically isolated from cathode 18 and target 12 by insulation 32 which also acts as a vacuum seal between the interior of the magnetron during sputtering and the exterior of the magnetron.
  • magnetron 10 It is a characteristic of magnetron 10 that all lines of magnetic flux lie in planes which include the axis of the target cone, and therefore, no lines of flux cross from one plane to another (have no azimuthal component). The flux lines thus converge toward the narrow end of target 12.
  • a conical magnet 26 To erode all areas of the target surface at a uniform rate, a conical magnet 26 is used, which tapers in strength from its outer end to inner end, either through physical tapering of magnet thickness or through a magnet whose magnetization per unit volume is varied along its length. This arrangement causes some lines of magnetic flux 34 to enter surface 13 without reaching lower wing 24, thus reducing the magnetic flux density over the shorter-radius portions of the target surface.
  • a conical magnetron 38 can be configured for RF sputtering.
  • a conical target is provided by an inner conical cathode 40 and an outer conical cathode 42, separated by additional wings 44 and 44", which are separated by an electrical insulator 46.
  • the two cathodes are connected across a conventional RF power source 48.
  • a frusto-conical magnetron has an opening at a narrow end to permit use of other equipment.
  • a Kaufman type ion source 50 may be mounted in such a way that it can bombard the growing film on the substrate surface with ions 52 of controlled type, energy, and dose.
  • the opening also permits the deposition of insulating compounds formed by rapidly sputtering a metal target and simultaneously bombarding the growing film with a reactive gas.
  • a further conventional magnetron sputtering apparatus is described in US Patent Number 6,497,803 and illustrated in Figure 4. The entire content of US Patent Number 6,497,803 is hereby incorporated by reference.
  • an unbalanced cylindrical magnetron 250 is shown as it may be used for sputter deposition of target material onto substrate 260. Rings of permanent magnets 216 and 217 create field lines 224 that work together with the surface of the cylindrical sputtering target 234 to form an axially symmetrical plasma trap by means of magnetic tunnel 221 . However, magnet ring 216 has greater pole strength than magnet ring 217, thereby creating open field lines 225 that project inwardly toward and outwardly away from the substrate 60 to be coated. This is an unbalanced magnetron.
  • the field lines 225 which are converging radially toward the centerline CL of the coating volume, produce a high-density plasma in the coating environment around the substrate. There is no magnetic linkage between opposite or adjacent pole faces because the opposite pole faces are part of the same ring magnet, and therefore, have the same polarity.
  • US Patent Number 4,862,032 describes a device that uses a conical surface as an anode, a hot filament cathode held at a negative voltage with respect to the anode, and a magnetic field that decreases in strength from anode to cathode.
  • the cathode filament
  • the electrons cross magnetic field lines, which cause the electrons to travel in orbits and efficiently ionize the background gas.
  • these magnetic field lines are generally parallel to the anode surface, thereby preventing the magnetic field lines from being an effective plasma trap if the anode is biased negatively so that the device does not operate as a magnetron sputter cathode.
  • this ion source is specifically designed to prevent sputtering from any of the component surfaces, preventing the device from being a source of deposition material.
  • an electrode serves either as a source of sputtered material or an anode in an ion source and a magnetic field confines electrons emitted from the electrode to permit sputtering in a magnetron mode when the electrode is biased negatively with respect to a reference electrode and forces electrons flowing from the electron source to the electrode to cross magnetic field lines when the electrode is biased positively with respect to the reference electrode.
  • Figure 1 illustrates a cross-sectional view of a frusto-conical magnetron
  • Figure 2 illustrates a cross-sectional view of a frusto-conical magnetron having a spot target suitable for RF-powered sputtering
  • Figure 3 illustrates a cross-sectional view of a frusto-conical magnetron combined with an ion beam deposition source
  • Figure 4 illustrates a cross-sectional view of a unbalanced cylindrical magnetron
  • Figure 5 illustrates a combined ion beam and sputtering apparatus
  • Figure 6 illustrates an alternative combined ion beam and sputtering apparatus
  • Figure 7 illustrates a third combined ion beam and sputtering apparatus.
  • Figure 5 shows combined ion beam and sputtering apparatus, which is rotationally symmetric.
  • magnet 101 produces magnetic field lines 102 that loop out of and back into the surface of conical electrode 103.
  • a ring of magnets or a keeper 104 is used to strengthen and shape magnetic field lines 102.
  • electrode 103 is biased negatively with respect to reference electrode 106, by power supply 107, in an appropriate background pressure of gas, magnetron sputtering of electrode 103 occurs.
  • power supply 107 of Figure 6 may be a negative DC voltage supply, a positive DC voltage supply, or a power supply supplying, alternatively, a negative DC voltage and a positive DC voltage.
  • a filament and power supply 108 provide an electron source.
  • one side of the electron source 108 is electrically connected to reference electrode 106.
  • the electron source 108 could also be held at a voltage above or below the voltage of the reference electrode 106.
  • Magnet 101 produces magnetic field lines 110, which do not intersect electrode 103.
  • electrode 103 is biased positively by power supply 107, electrons from the electron source 108 are attracted to electrode 103 and cross magnetic field lines 110 and 102 in order to reach electrode 103. This causes the electrons to travel in complex paths and produce ions.
  • Figure 6 shows an alternate combined ion beam and sputtering apparatus.
  • magnets 112 have greater pole strength than magnets 111 to great an unbalanced situation.
  • Magnets 111 and 112 produce magnetic field lines 120 which loop out of and into electrode 103, as well as magnetic field lines 140, which extend out of the source.
  • power supply 107 of Figure 6 may be a negative DC voltage supply, a positive DC voltage supply, or a power supply supplying, alternatively, a negative DC voltage and a positive DC voltage.
  • Electrode 103 When electrode 103 is biased negatively with respect to reference electrode 106, magnetic field lines 120 trap electrons emitted from the surface of electrode 103 and cause sputtering in a magnetron mode.
  • Figure 7 shows a third combined ion beam and sputtering apparatus.
  • magnet 150 has excess pole strength compared to magnets 151 and 152.
  • the magnetic field lines 160 loop out of and into electrode 170 and magnetic field lines 161 loop out of and into electrode 171.
  • Magnetic field lines 165 extend out of the end of electrodes 170 and 171.
  • Electrode 171 can be a conical frustum, as shown, or a cylinder.
  • Power supply 107 alternately biases electrode 170 positively and negatively with respect to electrode 171.
  • electrode 171 When electrode 171 is biased negatively with respect to electrode 170, the electrode 171 sputters in a magnetron mode and provides a source of electrons for electrode
  • electrode 170 When electrode 170 is biased negatively with respect to electrode 171 , the electrode 170 sputters in a magnetron mode and provides a source of electrons for electrode
  • Electrode 170 The electrons produced at electrode 170 cross magnetic field lines 160, 165, and 161 to reach positively biased electrode 171 and produce ions. The ions accelerate out of the end of electrode 170.
  • the frequency, at which the voltage to the electrode is alternated, is adjusted based on the parameters of the process.
  • power may be applied in intense bursts using what is commonly called high impulse pulsed magnetron sputtering.
  • a combined ion beam and sputtering apparatus includes an electrode that serves alternately as a source of sputtered material and as an anode (an ion source) and a reference electrode, which can be the vacuum chamber components that are electrically grounded.
  • the combined ion beam and sputtering apparatus provides a source of iions when the electrode is biased positively with respect to the reference electrode.
  • the magnetic field confines electrons emitted from the electrode to permit sputtering in a magnetron mode when the electrode is biased negatively with respect to the reference electrode. Moreover, the magnetic field forces electrons flowing from the electron source to the electrode to cross magnetic field lines when the electrode is biased positively with respect to the reference electrode.
  • a power supply that alternately applies negative and positive voltage to the electrode with respect to the reference electrode.
  • a sputtering apparatus includes an electrode having a material for sputtering; a reference electrode; an electron source; a power supply to apply a voltage to the electrode with respect to the reference electrode; and a magnetic field generating system to generate magnetic fields.
  • the magnetic field generating system confines electrons emitted from the electrode to permit sputtering of the material when the electrode is biased negatively with respect to the reference electrode.
  • the magnetic field generating system forces electrons flowing from the electron source to the electrode to cross the generated magnetic fields when the electrode is biased positively with respect to the reference electrode.
  • the electrode may be frusto-conical shaped or cylindrical shaped.
  • the magnetic field generating system may include a first magnet to produce a magnetic field that loops out of and back into a surface of the electrode and a second magnet to strengthen and shape magnetic field produced by the first magnet.
  • the magnetic field generating system may include a first magnet to produce a magnetic field that loops out of and back into a surface of the electrode and a second ring magnet, located around the frusto-conical shaped electrode, to strengthen and shape the magnetic field produced by the first magnet.
  • the magnetic field generating system may include a first magnet to produce a magnetic field that loops out of and back into a surface of the electrode and a second ring magnet, located around the cylindrical shaped electrode, to strengthen and shape magnetic field produced by the first magnet.
  • the electron source may be a filament and power supply and may be electrically connected to the reference electrode.
  • the electron source may be a hollow cathode emitter of electrons and may be electrically connected to a power supply between it and the reference electrode
  • the reference electrode may be located between the electron source and the electrode, or the electrode may be located between the electron source and the reference electrode.
  • the magnetic field generating system may include a first ring magnet, located around the frusto-conical shaped electrode, to produce a magnetic field that loops out of and back into a surface of the electrode and a second ring magnet, located around the frusto-conical shaped electrode, to strengthen and shape magnetic field produced by the first ring magnet.
  • the magnetic field generating system may include a first ring magnet, located around the cylindrical shaped electrode, to produce a magnetic field that loops out of and back into a surface of the electrode and a second ring magnet, located around the cylindrical shaped electrode, to strengthen and shape magnetic field produced by the first magnet.
  • a sputtering apparatus includes a first electrode having a material for sputtering; a second electrode having a material for sputtering; a power supply to alternately apply negative and positive voltage to the first electrode with respect to the second electrode; and a magnetic field generating system to generate magnetic fields.
  • the magnetic field generating system includes a first magnet to produce a first magnetic field that loops out of and back into a surface of the first electrode and a second magnetic field that loops out of and back into a surface of the second electrode.
  • the magnetic field generating system includes a second magnet to strengthen and shape the first magnetic field produced by the first magnet.
  • the magnetic field generating system including a third magnet to strengthen and shape the second magnetic field produced by the first magnet.
  • the first electrode When the first electrode is biased negatively with respect to the second electrode, the first electrode sputters material and provides a source of electrons for the second electrode.
  • the second electrode When the second electrode is biased negatively with respect to the first electrode, the second electrode sputters material and provides a source of electrons for the first electrode.
  • the first electrode may be frusto-conical shaped and the second electrode may be frusto-conical shaped.
  • the first electrode may be cylindrical shaped and the second electrode may be cylindrical shaped.
  • the first magnet may have excess pole strength compared to the second and third magnets.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de pulvérisation cathodique comprenant une électrode contenant un matériau de pulvérisation cathodique ; une électrode de référence ; une source d'électrons ; une alimentation électrique pour appliquer alternativement à l'électrode une tension négative et une tension positive par rapport à l'électrode de référence ; et un système de génération de champs magnétiques pour générer des champs magnétiques. Le système de génération de champs magnétiques confine des électrons émis par l'électrode pour permettre la pulvérisation cathodique du matériau quand l'électrode est polarisée négativement par rapport à l'électrode de référence. Le système de génération de champs magnétiques force des électrons circulant de la source d'électrons à l'électrode à croiser les champs magnétiques générés quand l'électrode est polarisée positivement par rapport à l'électrode de référence.
PCT/US2015/016519 2014-02-20 2015-02-19 Faisceau ionique combiné et appareil de pulvérisation cathodique WO2015127017A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461942262P 2014-02-20 2014-02-20
US61/942,262 2014-02-20

Publications (1)

Publication Number Publication Date
WO2015127017A1 true WO2015127017A1 (fr) 2015-08-27

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497803B2 (en) * 2000-05-31 2002-12-24 Isoflux, Inc. Unbalanced plasma generating apparatus having cylindrical symmetry
US20030059665A1 (en) * 2000-08-14 2003-03-27 Stephen Blum Microreactor
US20040149575A1 (en) * 2002-04-29 2004-08-05 Isoflux, Inc. System for unbalanced magnetron sputtering with AC power

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497803B2 (en) * 2000-05-31 2002-12-24 Isoflux, Inc. Unbalanced plasma generating apparatus having cylindrical symmetry
US20030059665A1 (en) * 2000-08-14 2003-03-27 Stephen Blum Microreactor
US20040149575A1 (en) * 2002-04-29 2004-08-05 Isoflux, Inc. System for unbalanced magnetron sputtering with AC power

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