Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/54—Apparatus specially adapted for continuous coating
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45517—Confinement of gases to vicinity of substrate
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45578—Elongated nozzles, tubes with holes
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
  • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32623—Mechanical discharge control means
  • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/32899—Multiple chambers, e.g. cluster tools
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
  • H01J37/3411—Constructional aspects of the reactor
  • H01J37/3414—Targets
  • H01J37/3417—Arrangements

Definitions

• Embodiments of the present disclosure generally relate to apparatus and methods for delivering one or more processing gases to a processing chamber. More particularly, embodiments of the present disclosure relate to delivering precursors through a linear plasma source in a processing chamber in in-line processing tools.
• In-line processing tools may be used to deposit material on substrates, such as solar cells, in a continuous manner for dozens to hundreds of hours.
• substrates such as solar cells
• a plasma source to deposit dielectric material
• a significant amount of dielectric film accumulates on inner surfaces of the processing tools.
• nozzle regions in the plasma source from which excited species diffuse can become restricted over a short period of time.
• Exposed surfaces of electrodes from which electric power is applied for plasma generation may be covered by deposits of the dielectric material.
• the plasma sources may need to be cleaned on a daily basis to remove the deposit. However, frequent cleaning negatively impacts the productivity of the deposition tool.
• Embodiments of the present disclosure relate to delivering precursors through a linear plasma source in a processing chamber in in-line processing tools.
• the gas delivery assembly includes a first gas delivery element for delivering a first processing gas and a second gas delivery element for delivering a second processing gas.
• the first gas delivery element has a plurality of injection holes positioned at a first distance away from a substrate supporting surface.
• the second gas delivery element includes an electrode, and a shield assembly surrounding the electrode. A cavity is formed between the electrode and the shield assembly, a nozzle of the cavity is directed towards the substrate supporting surface, and the nozzle is farther away from the substrate supporting surface than the plurality of injection holes of the first gas delivery element.
• the processing chamber includes a chamber body at least partially defining a chamber volume, a substrate transferring assembly disposed in the chamber volume, wherein the substrate transferring assembly has a substrate supporting surface and transfers a plurality of substrates on the substrate supporting surface, and one or more deposition sources disposed in the chamber volume above the substrate supporting surface.
• Each deposition source includes a first gas delivery element for delivering a first processing gas and a second gas delivery element for delivering a second processing gas.
• the first gas delivery element has a plurality of injection holes positioned at a first distance away from the substrate supporting surface.
• the second gas delivery element includes an electrode, and a shield assembly surrounding the electrode. A cavity is formed between the electrode and the shield assembly, a nozzle of the cavity is directed towards the substrate supporting surface, and the nozzle is farther way from the substrate supporting surface than the plurality of injection holes of the first gas delivery element.
• Yet another embodiment of the present disclosure provides a method for processing a substrate.
• the method includes positioning a substrate on a substrate supporting surface, delivering a first processing gas through a first gas delivery element having a plurality of injection holes at a first distance from the substrate supporting surface, simultaneously, delivering a second processing gas through a second gas delivery element having one or more nozzles positioned farther away from the substrate supporting surface than the first plurality of injection holes, and igniting a plasma by applying a power to an electrode disposed inside the second gas delivery element.
• Figure 1 A is a schematic isometric view of a substrate processing system, according to one embodiment of the present disclosure.
• Figure 1 B is a schematic partial sectional side view of the substrate processing system of Figure 1A showing a deposition chamber according to one embodiment of the present disclosure.
• Figure 2A is a schematic sectional view of a deposition source according to one embodiment of the present disclosure.
• Figure 2B is a schematic sectional view of the deposition source of Figure 2A according to one embodiment the present disclosure.
• Figure 3A is a schematic sectional view of a deposition source having an injection assembly according to one embodiment of the present disclosure.
• Figure 3B is a schematic section of the injection assembly of Figure 3A.
• Figure 4A is a schematic perspective view of an injection assembly according to one embodiment of the present disclosure.
• Figure 4B is a schematic section of the injection assembly of Figure 4A.
• Figure 5A is a schematic perspective view of an injection assembly according to one embodiment of the present disclosure.
• Figure 5B is a schematic section of the injection assembly of Figure 5A.
• Embodiments of the present disclosure relate to delivering precursors through a linear plasma source in a processing chamber in in-line processing tools.
• a first processing gas is introduced closer to a substrate plane, where processing, such as depositing a dielectric film, is meant to occur, than to a nozzle outlet, where a second processing gas is introduced.
• the nozzle outlet may be an outlet of a plasma source.
• embodiment of the present disclosure By delivering precursors at different distances from the substrate being processed, embodiment of the present disclosure also change ratio of the different precursors, thus, enabling reduced flow of more expensive precursors to reduce cost of production.
• FIG. 1A is a schematic isometric view of an in-line processing system 100, according to one embodiment of the disclosure.
• the in-line processing system 100 may be a high throughput system used for in-situ processing of a film stack used to form regions of a solar cell device.
• the in-line processing system 100 includes a substrate receiving chamber 105, pre-processing chamber 107, at least one processing chamber maintained at a pressure below that of atmospheric pressure, such as a first processing chamber 140, a second processing chamber 141 , and a third processing chamber 142, one or more transferring chambers 109 and 1 1 1 , a buffer chamber 1 14 and a substrate unload chamber 1 16.
• the in-line processing system 100 may also include one or more support components 1 10, such as a control unit, a user interface, a buffer, or the like.
• the processing chambers 140, 141 , 142 may include, for example, one or more of plasma enhanced chemical vapor deposition (PECVD) chambers, low pressure chemical vapor deposition (LPCVD) chambers, atomic layer deposition (ALD) chambers, plasma enhanced atomic layer deposition chambers (PEALD), physical vapor deposition (PVD) chambers, thermal processing chambers ⁇ e.g., RTA or RTO chambers), substrate reorientation chambers ⁇ e.g., flipping chambers) and/or other similar processing chambers.
• PECVD plasma enhanced chemical vapor deposition
• LPCVD low pressure chemical vapor deposition
• ALD atomic layer deposition
• PEALD plasma enhanced atomic layer deposition chambers
• PVD physical vapor deposition
• thermal processing chambers ⁇ e.g., RTA or RTO chambers
• substrate reorientation chambers ⁇ e.g., flipping chambers
• Figure 1 B is a schematic partial sectional side view of the substrate processing system 100 showing the processing chamber 140 according to one embodiment of the disclosure.
• the processing chamber 140 includes chamber walls 102 that at least partially enclose a chamber volume 106, and a conveyor transfer system 1 15.
• the conveyor transfer system 1 15 transfers a plurality of substrates 101 through the processing chamber 140 across the chamber volume 106.
• the processing chamber 140 also includes one or more deposition sources, such as deposition sources 160A, 160B, 160C, 160D disposed over the conveyor transfer system 1 15 in the chamber volume 106.
• a vacuum pump 145 may be in fluid connection with the chamber volume 106
• a conveyor 121 as a portion of the conveyor transfer system 1 15, may be disposed in the chamber volume 106 to transfer the substrates 101 through the processing chamber 140.
• the conveyor 121 may include rollers 1 12 and a belt 1 13.
• An upper surface of the belt 1 13 forms a substrate supporting surface 122 for supporting a plurality of substrates 101 while transferring the substrates 101 .
• Each deposition source 160A-160D may be connected with gas sources 128 and 129 and a power source 131 .
• the deposition sources 160A-160D may be adapted to deliver one or more processing gases to form a film on the surface of the substrates 101 as the substrates 101 pass under and adjacent to the deposition sources 160A-160D.
• Gas lines 148 and 149 facilitate transfer of gases from the gas sources 128, 129 to the deposition sources 160A-160D.
• Each deposition source 160A-160D may include one or more gas delivery element for delivering one or more processing gases independently. As shown in Figure 1 B, each deposition source 160A-160D includes a first gas delivery element
• the gas delivery elements 181 , 182 are positioned to direct the process gases to a processing region 125 between each deposition source 160A-160D and the substrate supporting surface 122.
• the first gas delivery element 181 includes a fluid plenum 161 that may be connected to the gas source 129 to receive the processing gas from the gas source 129 and deliver the received gas to the processing region 125 through an injection assembly 163.
• the injection assembly 163 is positioned to deliver the processing gas at a first distance 165 from the substrate supporting surface 122.
• the second gas delivery element 182 may also a fluid plenum 162 that may be connected to the gas source 128 to receive the process gas from the gas source 128 and deliver the received gas to the processing region 125 through one or more nozzles 164.
• the second gas delivery element 182 may include two groups of nozzles 164 disposed on opposite sides of the first gas delivery element 181 .
• the two groups of nozzles 164 may be symmetrical about the first gas delivery element 181 .
• the second gas delivery element 182 may be a plasma source having an electrode connected to the power source 131 .
• the one or more nozzles 164 are positioned away from the injection assembly 163 at a second distance 166. By positioning the nozzles 164 of the second gas delivery element
• embodiments of the present disclosure provide means to reduce the reaction between the processing gases from the two gas delivery elements 181 , 182 to react near the near the nozzles 164 and the injection assembly 163, thus, reducing undesired build up.
• the first distance 165 is arranged to be shorter than the second distance 166 to facilitate reactions of the processing gases on the substrate 101 positioned on the substrate supporting surface 122 and further reduce reactions of the processing gases near the nozzles 164.
• the first distance may be in the range of about 10 mm to about 50 mm, for example about 25mm.
• the gas sources 128 and 129 are generally configured to provide one or more precursor gases and/or carrier gases that are used to deposit a layer on the surface of the substrates 101 via deposition process, such as a PECVD process.
• At least one of the gas sources 128 and 129 is configured to deliver a silicon-containing gas to the deposition sources 160A-160D.
• the silicon-containing gas may be selected from a group consisting of silane, disilane, chlorosilane, dichlorosilane, trichlorosilane, dibromosilane, trimethylsilane, tetramethylsilane, tridimethylaminosilane (TriDMAS), tetraethoxysilane (TEOS), triethoxyfluorosilane (TEFS), silicon tetrachloride, silicon tetrabromide, 1 ,3,5,7- tetramethylcyclotetrasiloxane (TMCTS), dimethyldiethoxy silane (DMDE), octomethylcyclotetrasiloxane (OMCTS), methyldiethoxysilane (MDEOS), bis(tertiary- butylamino
• the oxygen-containing gas may be selected from a group consisting of oxygen (O2), nitrous oxide (N 2 O), ozone (O3), and combinations thereof.
• the silicon-containing gas is silane and the oxygen-containing gas is O2.
• the silicon-containing gas and the oxygen-containing gas may form a dielectric layer on the surface of the substrates 101 .
• At least one of the gas sources 128 and 129 is configured to deliver a silicon-containing gas and nitrogen-containing gas to a deposition source 160A-160D.
• the nitrogen-containing gas may be, for example, diatomic nitrogen, nitrous oxide, or ammonia.
• the gas sources 128 and 129 may be adapted to provide multiple precursor gases, either independently or simultaneously.
• the gases sources 128, 129 may be gas cabinets housing multiple precursor and/or carrier gas sources.
• any of deposition sources 160A-160D may be configured to deliver other precursor gases in addition to those listed above, including an aluminum-containing gas.
• the deposition sources 160A-160D, and the precursor gases provided thereto, may be used to facilitate the formation of a desired passivation layer stack deposition. It is also contemplated that more gas sources may be added to the processing chamber 140 to accommodate more types of gas delivery.
• each of the deposition sources 160A-160D may be adapted to deposit different film materials on the substrates 101 .
• the deposition sources 160A-160D may be adapted to deposition one or more films of silicon dioxide, silicon nitride, aluminum oxide, aluminum nitride, and the like.
• Figure 2A is a schematic sectional view of the deposition source 160A according to one embodiment of the present embodiment.
• Figure 2A is sectioned along the substrate transfer direction shown in arrow 201 .
• Figure 2B is a second sectional view of the deposition source 160A.
• Figure 2B is sectional perpendicular to the substrate transfer direction.
• the deposition source 160A may include a housing 208. As shown in Figure 2A, two second gas delivery elements 182 and one first gas delivery element 181 are attached to the housing 208.
• the first gas delivery element 181 may be positioned in a central plane 202 perpendicular to the substrate supporting surface 122.
• the two second gas delivery elements 182 are positioned symmetrically about the central plane 202 at opposite sides of the first gas delivery element 182.
• each of the second gas delivery elements 182 may be tilted at an angle towards to the central plane 202 to provide adequate overlap in the plasma as the plasma diffuses out each gas delivery element 182.
• the first gas delivery element 181 may include a manifold 204 attached to the housing through a bracket 205.
• a fluid plenum 206 may be formed in the bracket 205.
• the manifold 204 may be an elongated body having a plurality of through holes 207 connected to the fluid plenum 206.
• the fluid plenum 206 may be connected to a gas source, such as the gas source 129.
• the manifold 204 may be positioned in the central plane 202 perpendiculars to the substrate supporting surface 122.
• the manifold 204 may be positioned above the substrate supporting surface 122 with a longitudinal axis of the manifold 204 perpendicular to the substrate moving direction shown by arrow 201 .
• a plurality of injection tubes 230 may be attached to the manifold 204.
• the plurality of injection tubes 230 extend from the manifold towards the substrate supporting surface 122.
• Each injection tube 230 may be a tubular structure defining an inner channel 232.
• the injection tubes 230 may be circular and have an inner diameter of about 4 mm to about 5 mm.
• Each inner channel 232 has an upper opening 234 connected with the fluid plenum 206 through a corresponding one of the plurality of through hole 207 and a lower opening 236 facing the substrate supporting surface 122.
• the plurality of injection tubes 230 may be evenly distributed across the length of the manifold 204.
• the spacing and/or inner diameters of the injection tubes 230 may be varied to compensate pressure changes in the fluid plenum 206 to achieve uniform gas deposition across the substrate 101 .
• Each of the second gas delivery elements 182 may be a plasma source including an electrode 210 and a target 283.
• the electrode 210 may be coupled to a power supply, such as the power supply 131 in Figure 1 B, for plasma generation.
• the power supply 131 may be an AC power supply having a frequency range between about 20 kHz to about 500 kHz, such as about 40 kHz.
• a shield assembly 223 may be positioned around the electrode 210 and the target 283 and form a cavity 222 around the electrode 210 and the target 283.
• Magnets 224, 225, 226 may be disposed adjacent the shield assembly 223 and the electrode 210.
• the electromagnetic field between the magnets 225, 226 facilitates plasma formation within the cavity 222.
• the electromagnetic field between the magnets 224, 226 helps shape the plasma in the cavity 222.
• An outer surface 214 of the electrode 210 may be covered by the target 283 to prevent any plasma erosion to the electrode 210 during deposition processes.
• the target 283 services as a sacrificial material and may be sputtered and ions of the target 283 may be delivered to the processing region 125 with the plasma and contribute to the formation of material on the substrate 101 .
• the target 283 may share a common element with one of the processing gas being delivered by the deposition source 160A.
• the target 283 may be made of crystalline silicon for depositing silicon containing films.
• the material formed on the substrate 101 includes less than 1 percent of material originating from the target 283.
• a processing gas from a first gas source such as the gas source 129
• a first gas source such as the gas source 129
• reactive and/or inert gases from a second gas source such as gas source 128, are delivered to the processing region 125 from a nozzle 228 of the cavity 222 in the second gas delivery element 182.
• the magnets 224, 226 and the electrode 210 facilitate formation of plasma from process gases located in the processing region 125, thereby inducing deposition of material on a substrate located within the processing region 125.
• Embodiments for the present disclosure arrange injection points of one precursor away from injection points another precursor, thus, reducing undesired reactions of the precursors near the injection points and reducing particle generation. Additionally, by moving injection points of a first precursor gas closer to the substrate being processed than a second precursor, embodiments of the present disclosure can reduce the ratio the first precursor to second precursor to achieve the same composition of the deposited films. For example, when forming silicon nitride using silane and nitrogen, the ratio of silane to nitrogen is reduced when silane is delivered closer to the substrate than nitrogen. For example silane may be delivered through the first gas delivery element 181 and nitrogen may be delivered through the second gas delivery elements 182. Thus, embodiments of the present disclosure may also reduce cost of production by delivering the expensive precursor closer to the substrate to reduce the amount of expensive precursor.
• Embodiments of the present disclosure further includes adjusting the number, size, and location of gas delivery elements, such as the gas delivery element 181 and/or the second gas delivery elements 182, to control uniformity of film properties, such as thickness, refractive index.
• the distances between a plasma source and a gas injection, such as the distance 166 between the second gas delivery elements 182 and the first gas delivery element 181 may be adjusted to optimized to achieve maximum spacing from the gas injection to the source.
• Figure 3A is a schematic sectional view of a deposition source 300 having an injection assembly 310 according to one embodiment of the present disclosure.
• the deposition source 300 is sectional along a longitudinal direction and the substrate 101 is being transferred into the paper.
• Figure 3B is a schematic section of the injection assembly 310.
• the deposition source 300 includes two second gas delivery elements 182 disposed on opposite of a gas delivery element 310.
• the gas delivery element 310 is configured to deliver a processing gas from a gas source, such as the gas source 129, close to the substrate supporting surface 122.
• the second gas delivery elements 182 is positioned to deliver processing gas from a gas source, such as the gas source 128, farther away from the substrate supporting surface 122 than the gas delivery element 182.
• the gas delivery element 310 may include two inlet tubes 312 and a manifold 316 coupled between the two inlet tubes 312.
• the inlet tubes 312 may be coupled to a housing or frame (not shown) of the deposition source 300 and extend downward towards the substrate support surface 122 to position the manifold 316 at a distance 322 from the substrate support surface 122.
• the manifold 316 may be positioned parallel to the substrate support surface 122.
• Each inlet tube 312 may include an inlet channel 314 formed therein.
• the inlet channels 314 may be connected to a gas source, such as the gas source 129.
• the manifold 316 may include a fluid plenum 318 connected with the inlet channels 314 of the inlet tube 312.
• a plurality of injection holes 320 may be formed through the manifold 316 and facing downward. In one embodiment, the plurality of injection holes 320 may have the same diameter. In one embodiment, the plurality of injection holes 320 may be evenly distributed across the manifold 316. Alternatively, the spacing and/or size of the plurality of injection holes 320 may be varied to compensate the variation in fluid pressure in the fluid plenum 318 to achieve uniform deposition.
• the processing gas from the gas source 129 may be delivered to the processing region 125 above the substrate 101 through the inlet channels 314, the fluid plenum 318 and the plurality of injection holes 320.
• the injection holes 320 are close to the substrate supporting surface 122, at the distance 322.
• the processing gas from the gas source 128 is delivered towards the processing region 125 through the capacity portion 222 of the second gas delivery element 182.
• the second gas delivery element 182 is farther away from the substrate supporting surface 122 than the injection holes the injection holes 320 of the gas delivery element 310.
• the second gas delivery element 182 is at a distance 324 away from the injection holes 320 of the gas delivery element 310. In one embodiment the distance 324 is longer than the distance 322 to reduce undesired reaction between processing gases, particularly, near the second gas delivery element 182.
• Figure 4A is a schematic perspective view of an injection assembly 400 according to one embodiment of the present disclosure.
• Figure 4B is a schematic section of the injection assembly 400. Similar to the injection assembly 310 of Figures 3A-3B, the injection assembly 400 may be used to extend injection holes of a processing gas close to the substrate being processed.
• the injection assembly 400 includes two or more extension tubes 402 coupled to a planar manifold 403.
• the planar manifold 403 may have a plurality of injection holes 408.
• the extension tubes 402 may be coupled to any gas delivery assembly to extend delivery path of one processing gas downwards.
• the planar manifold 403 may include a plurality of a plurality of linear tubes 406 coupled between two end tubes 404.
• the plurality of injection holes 408 may be distributed among the plurality of linear tubes 406.
• the linear tubes 406 may be positioned across the substrate supporting surface and perpendicular to the substrate moving direction 201 to cover the entire width of the substrate 101 .
• the plurality of injection holes 408 may have the same diameter. In one embodiment, the plurality of injection holes 408 may be evenly distributed across the planar manifold 403. Alternatively, the spacing and/or size of the plurality of injection holes 408 may be varied to compensate the variation in fluid pressure in the delivery path.
• Figure 5A is a schematic perspective view of an injection assembly 500 according to one embodiment of the present disclosure.
• Figure 5B is a schematic section of the injection assembly 500. Similar to the injection assembly 400, the injection assembly 500 includes two or more extension tubes 502 coupled to a planar manifold 504.
• the planar manifold 504 may include a rectangular frame 508 and a plurality of injection tubes 510 connected between the rectangular frame 508.
• the injection tubes 510 may be disposed along the substrate transfer direction 201 .
• a fluid plenum 512 may be formed through in the rectangular frame 508 and the injection tubes 510.
• a plurality of injection holes 514 are formed through the injection tubes 510 and/or the rectangular frame 508 and connected with the fluid plenum 512. The spacing and/or size of the plurality of injection holes 514 may be varied to compensate the variation in fluid pressure in the fluid plenum 512.
• apparatus and method of the present disclosure may be used in any suitable processes where more than one processing gases are delivered to the processing chamber.

Landscapes

• Chemical & Material Sciences (AREA)
• Engineering & Computer Science (AREA)
• Metallurgy (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Materials Engineering (AREA)
• Mechanical Engineering (AREA)
• General Chemical & Material Sciences (AREA)
• Organic Chemistry (AREA)
• Physics & Mathematics (AREA)
• Plasma & Fusion (AREA)
• Analytical Chemistry (AREA)
• Power Engineering (AREA)
• Chemical Vapour Deposition (AREA)

Applications Claiming Priority (2)

Publications (1)

Family

ID=53800519

Family Applications (1)

Country Status (2)

Cited By (1)

Citations (5)

• 2015
  • 2015-01-09 WO PCT/US2015/010876 patent/WO2015122977A1/en active Application Filing
  • 2015-02-06 TW TW104104100A patent/TW201534747A/zh unknown

Patent Citations (5)

Also Published As

Similar Documents

Legal Events