WO2015122593A1 - Conditionneur de patin de polissage mécano-chimique comprenant des sections à points et son procédé de fabrication - Google Patents

Conditionneur de patin de polissage mécano-chimique comprenant des sections à points et son procédé de fabrication Download PDF

Info

Publication number
WO2015122593A1
WO2015122593A1 PCT/KR2014/010305 KR2014010305W WO2015122593A1 WO 2015122593 A1 WO2015122593 A1 WO 2015122593A1 KR 2014010305 W KR2014010305 W KR 2014010305W WO 2015122593 A1 WO2015122593 A1 WO 2015122593A1
Authority
WO
WIPO (PCT)
Prior art keywords
dot portion
dot
substrate
radius
curvature
Prior art date
Application number
PCT/KR2014/010305
Other languages
English (en)
Korean (ko)
Inventor
권완재
권영필
김태경
양정현
이상호
Original Assignee
새솔다이아몬드공업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 새솔다이아몬드공업 주식회사 filed Critical 새솔다이아몬드공업 주식회사
Publication of WO2015122593A1 publication Critical patent/WO2015122593A1/fr

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D2203/00—Tool surfaces formed with a pattern

Definitions

  • the present invention relates to a CMP pad conditioner having a dot portion and a method for manufacturing the same. Specifically, the present invention relates to a conditioner structure in which a plurality of dot portions protruded convexly in a predetermined region on a substrate, thereby maintaining a high surface roughness with a low cutting amount of the pad per hour. The invention relates to a CMP pad conditioner and a method of manufacturing the same.
  • Wafers are disc-shaped silicon semiconductors used in making integrated circuits, and the importance of wafer flatness is increasing due to the development of miniaturization of surface semiconductor wafers and the integration of circuits by thinly cutting single crystal silicon with a purity of 99.9%.
  • the chemical mechanical polishing (CMP) process among the planarization processes is a planarization process mainly used in wafer processing as a method of exerting an excellent planarization effect.
  • the CMP process is a process of polishing a wafer by performing a relative rotational movement with the pad while pressing the wafer onto a polishing pad supplied with a polishing liquid.
  • the conditioner is embedded with fine diamond particles toward the polishing pad to finely cut the surface of the polishing pad.
  • the planarization process is performed simultaneously with the planarization process and the dressing operation to shorten the time of the CMP process.
  • the conventional conditioner has a problem in that the dressing performance is considerably lowered as the time of the CMP process elapses, and the diamond is released due to the slurry containing the compound.
  • Korean Patent Laid-Open Publication No. 2014-0006277 discloses a structure in which diamond is fixed at the end of a protrusion. This has the effect of reducing the frequency of defects or scratches in the CMP process, but precise work is required, and as the time of the polishing process elapses, the protrusion is gradually polished from the end, so that the grinding force is sharply reduced.
  • An object of the present invention relates to a CMP pad conditioner having a dot portion and a method for manufacturing the same. Specifically, a conditioner structure in which a plurality of dot portions protrude convexly in a predetermined area on a substrate is formed, and the surface cutting time of the pad is low and the surface roughness is high. It is to provide a CMP pad conditioner and a method of manufacturing the same that can be maintained.
  • the CMP pad conditioner with a dot portion a substrate comprising at least one or more flat surfaces, at least one dot formed on the flat surface and a plurality of polishing formed on the surface of the dot portion
  • grains are comprised and a dot part is comprised by the spherical surface which has predetermined
  • the radius of curvature R of the dot portion may be configured to be larger than the height of the protrusion of the dot portion.
  • the radius of curvature R may be configured to be 0.1mm to 5mm.
  • the dot portion may include a first dot portion having a relatively high projecting height and a second dot portion having a relatively high projecting height, and the first dot portion and the second dot portion may have the same radius of curvature. have.
  • the first region may further include a first region in which the plurality of first dot portions are densely arranged and a second region in which the plurality of second dot portions are densely arranged, and the first region and the second region may be alternately disposed adjacent to each other on the substrate.
  • the dot portion includes a third dot portion having a relatively small radius of curvature R A and a fourth dot portion having a relatively large radius of curvature R B , and the third dot portion and the fourth dot portion are flat.
  • the cross section on the same side with the face may be configured to have the same radius R C.
  • the third dot portion and the fourth dot portion may be randomly formed on the flat surface of the substrate.
  • the third dot portion and the fourth dot portion may be alternately formed along an arc of concentric circles.
  • a metal layer containing nickel or copper may be formed under the abrasive particles.
  • an additional plating layer containing chromium may be formed on the surface of the metal layer.
  • the CMP pad conditioner may be manufactured by a reverse electrodeposition method.
  • the dot portion may be formed on the radiation from the center of the substrate.
  • the dot portion may be disposed in a region spaced apart from the center of the substrate.
  • the area may be configured to be an area of 50% or more and 100% or less of the radius from the center of the substrate.
  • the substrate a plurality of pieces may be configured to be bonded to each other.
  • the plurality of pieces may be configured to include dot portions of different sizes between adjacent pieces.
  • the manufacturing method of the CMP pad conditioner having a dot portion of the present invention the step of applying abrasive particles to the recess of the casting mold, forming a metal layer on the recess of the casting mold, the substrate on the upper surface of the casting mold Forming a mold, separating or removing the casting mold from the substrate, and etching the metal layer to expose the abrasive particles, wherein the recess has a predetermined radius of curvature R. It is composed of a depression formed from the top of the frame.
  • the concave portion may be configured to be formed in the region of 50% or more and 100% or less of the radius from the center of the casting mold.
  • the radius of curvature R may be configured to be 0.1mm to 5mm.
  • the method may further include forming an additional plating layer formed on the surface of the metal layer.
  • the present invention has a structure in which a diamond coating layer is coated with convexly protruding dot portions and dot outer circumferences, thereby maintaining uniform pressing force applied to the pad even in abrasion phenomenon generated during polishing, and the time of the flattening process Even if it passes, the cutting amount per time can be kept substantially constant.
  • the present invention hardly changes the amount of cutting per hour, it is unnecessary to make a manufacturing process of varying the height difference or a manufacturing process of differently adjusting the protrusion height of the particles, thereby reducing the manufacturing time of the conditioner and simplifying the manufacturing process. You can also save money.
  • the present invention protrudes the dot portion having a predetermined radius of curvature on the substrate, so that the surface roughness remains high even after the time of the flattening process elapses, thereby significantly reducing the conventional performance degradation phenomenon.
  • the present invention can obtain an excellent effect on performance recovery while reducing the amount of cutting per hour to the polishing pad, it is possible to extend the life of the polishing pad in comparison with the same cutting amount.
  • the present invention by forming an additional plating layer on the surface of the metal layer, to compensate for the surface uniformity generated during the etching process of the reverse electrodeposition manufacturing process, it is possible to improve the abrasive force of the abrasive particles.
  • FIG. 1 is a perspective view of a CMP pad conditioner with a dot portion according to a first embodiment of the present invention.
  • FIG 2 is an enlarged cross-sectional view of the dot portion of the CMP pad conditioner in which the dot portion is formed according to the first embodiment of the present invention.
  • FIG 3 is a perspective view of a CMP pad conditioner with a dot portion according to a second embodiment of the present invention.
  • FIG. 4 is a perspective view of a CMP pad conditioner with a dot portion according to a third embodiment of the present invention.
  • 5A and 5B illustrate data comparing pad cutting amount (PWR) and surface roughness (R pk ) per hour according to grinding conditions between Examples and Comparative Examples of the present invention.
  • 6A and 6B are experimental data comparing performance change by measuring pad cutting amount PWR and surface roughness R pk per hour according to time between the embodiment of the present invention and the comparative example.
  • FIG. 7 is a flowchart illustrating a method of manufacturing a CMP pad conditioner in which a dot portion is formed according to an embodiment of the present invention.
  • 8A to 8E are explanatory views for each step of the manufacturing method of the CMP pad conditioner with a dot portion according to an embodiment of the present invention.
  • 9A and 9B are explanatory diagrams of manufacturing a CMP pad conditioner in which a dot portion is formed according to an embodiment of the present invention in a segmented manner.
  • 10 and 11 are actual pictures of the CMP pad conditioner and the dot portion formed with a dot portion according to an embodiment of the present invention.
  • FIG. 1 is a perspective view of a CMP pad conditioner with a dot portion according to a first embodiment of the present invention.
  • 10 and 11 are actual photographs of the CMP pad conditioner and the dot portion in which the dot portion is formed according to an embodiment of the present invention.
  • the CMP pad conditioner 100 in which the dot portion 300 of the present invention is formed is generally disk-shaped and has a substrate 200 and a flat surface 210 having a flat surface 210. ) Is composed of a plurality of dot portions 300 protrudingly formed.
  • the substrate 200 includes a plurality of dot parts 300 protruding upward from the upper surface as a disk of a disc, and is connected to the driving motor to the lower surface and pressed against the pad.
  • the substrate 200 is placed in contact with the CMP pad by pressing the substrate 200 up and down.
  • the surface of the pad is cut by operating the drive motor and rotating relative to the pad.
  • the substrate 200 is made of nickel (Ni 2 ), and will be described below with the simplest structure to explain the technical features of the dot portion 300 of the present invention.
  • the abrasive particles 310 for grinding the pad surface have a fine size and have a size of 5 ⁇ m to 400 ⁇ m, and a size of about 90 ⁇ m to about 250 ⁇ m.
  • the abrasive particle 310 is made of a material higher than the hardness of the pad, it is preferably composed of diamond.
  • the external shape of the abrasive particles 310 is not substantially all the same, in the exemplary embodiment of the present invention, the abrasive particles 310 grained on the surface of the dot portion 300 all have substantially the same protrusion height.
  • the conditioner 100 of the present invention is manufactured in a reverse electrodeposition method in which the casting mold is removed after casting on the upper surface of the casting mold, all the most protruding points of the abrasive particles 310 are located on the same concentric surface.
  • the concentric surface means a surface of a sphere having the same center as the center of the curvature of the outer circumference of the dot portion 300.
  • the substrate may be manufactured in a segmented manner using a plurality of casting molds. In other words, one substrate may be manufactured by attaching or assembling a substrate manufactured by reverse electrodeposition in each casting mold by using two or more casting molds having different recesses. Referring to FIG.
  • the substrate 200 may be manufactured in a segment manner in which a part of the substrate is cast in a plurality of casting molds, and then the parts are joined to form one substrate. At this time, it is preferable that adjacent portions are preferably formed with different size of the dot portion 300.
  • the dot portion 300 protruding upward from the flat surface 210 of the substrate 200 may be radially formed on the substrate 200, and a plurality of dot portions 300 may be formed in an area spaced a predetermined radius from the circle center of the substrate 200. May be Although the dot part 300 may be formed on both planes of the substrate 200, it is preferable that a plurality of dot parts 300 are formed in an area of 50% to 100% of the radius from the center of the substrate 200 to the outer circumferential surface thereof. . In addition, one conditioner 100 has a maximum of 10,000 dot portions 300, preferably 100 ⁇ 1,000 distribution is appropriate.
  • the dot part 300 is formed only in a particularly necessary area, thereby minimizing the manufacturing cost and shortening the manufacturing time, and at the same time, exhibiting an optimum polishing effect for the same volume.
  • the dot portion 300 is exposed to a number of abrasive particles 310 along the outer circumference.
  • the metal layer 320 is preferably formed around the lower side of the abrasive particles 310.
  • the metal layer 320 may be formed of a component having strong corrosion resistance, such as nickel (Ni) or copper (Cu).
  • the metal layer 320 may prevent the falling of the abrasive particles 310 from chemicals such as slurry and support the abrasive grains of the abrasive particles 310 and may be formed by an electroplating method.
  • the dot part 300 is formed of a nickel (Ni 2 ) component such as the substrate 200 and protrudes onto the flat surface 210 of the substrate 200.
  • the center of the radius of curvature of the dot portion 300 is positioned below the flat surface 210 of the substrate 200.
  • each dot portion 300 has a predetermined radius of curvature and a portion of the dot portion 300 is exposed on the flat surface 210 of the substrate 200. That is, the dot portion 300 is a spherical surface having a predetermined radius of curvature R protrudes.
  • the diameter of one dot portion 300 may be composed of approximately 0.1mm to 5mm.
  • the abrasive particles 310 may be appropriately selected from the size of about 5 ⁇ m to 400 ⁇ m, and is fixed to the outer periphery of the dot portion 300.
  • the diamond thin film layer is formed on the entire surface, but in the present invention, the abrasive particles 310 are fixed to only the surface of the dot part 300.
  • the portion that is in intensive contact with the pad is the dot portion 300, and even if only the surface of the dot portion 300 is coated with abrasive particles, the cutting effect is sufficient and the amount of cutting per hour is almost uniform. Can be maintained. Therefore, the present invention exhibits the effect of reducing the manufacturing cost by forming the abrasive grains only in necessary portions.
  • the dot portions 300 formed on the substantially disk-shaped substrate 200 are approximately evenly spaced from each other, and the surfaces of each of the dot portions 300 are rounded and curved.
  • Each of the dot parts 300 has a predetermined radius of curvature R, and the centers of the radiuses may all exist inside the substrate 200.
  • the radius of curvature R of the dot portion 300 may be different from each other, and each height may also be different from each other.
  • the present invention has a structure in which a plurality of dot portions 300 having a predetermined radius of curvature R protrudes onto the substrate 200.
  • the dot part 300 is a structure in which a part of a sphere is protruded onto the substrate 200, and is optimally prevented from deterioration and maintains a low pad cutting amount, thereby exerting a positive effect on the life of the pad.
  • FIG 2 is an enlarged cross-sectional view of the dot portion of the CMP pad conditioner in which the dot portion is formed according to the first embodiment of the present invention.
  • a plurality of dot parts 300 are formed on a flat surface of the substrate 200 and protrude with a predetermined radius of curvature R.
  • the dot part 300 may be described as a shape in which a part of the dot part 300 is exposed on the substrate 200. That is, the dot portion 300 is a spherical surface having a predetermined radius of curvature R protrudes. At this time, the radius of curvature R can be appropriately selected by the user in consideration of the height of the projection.
  • the dot portion 300 has a predetermined curvature
  • the pressure applied to the pad is maintained almost the same even after the CMP polishing process has elapsed, so that the polishing performance of the conditioner is not substantially reduced.
  • both the pad and the conditioner are worn. If the dot portion 300 is formed in the shape of a part of the sphere protruding, the cutting force is naturally applied to the pad even during the flattening process. I can keep it.
  • the abrasive particles 310 abrasively grained at the most protruding portion of the dot portion 300 are preferentially worn, and then the abrasive particles 310 are gradually worn away from the most protruding portion, so that the cutting force can be naturally maintained. Because it is a structure.
  • each of the dot portion 300 has the same protrusion height from the substrate 200, but may have a different radius of curvature.
  • the maximum height of the dot portion 300 is the same, but the center of curvature may be formed under the flat surface 210 of the substrate 200, the radius of curvature may be formed differently.
  • each of the dot portion 300 may have different protrusion heights while having the same radius of curvature (R).
  • R radius of curvature
  • the dot part 300 may be formed to have the same curvature radius R.
  • the center of curvature is not positioned above the flat surface 210 of the substrate 200.
  • each of the dot portion 300 has a different radius of curvature and protrusion height, but may be formed in a circle having the same cross-sectional area with respect to the flat surface 210 of the substrate 200. That is, when each dot portion 300 is cross-sectionalized based on the flat surface 210 of the substrate 200, all of the circles of the cross section may be formed as circles having the same width and radius.
  • the protrusion height of the abrasive grains 310 which are grained at the outer circumference of the dot portion 300, is substantially uniform.
  • the dot part 300 is formed convexly in a rounded curved surface, and the abrasive grains 310 and the metal layer 320 are formed along the outer circumference.
  • the dot part 300 may be formed by a reverse electrodeposition manufacturing method to form abrasive particles 310 having a uniform protrusion height on the outer circumference.
  • the fine abrasive particles 310 may be different in shape from each other, but the most protruding points may be disposed on the same concentric circles.
  • the metal layer 320 is formed around the bottom of the abrasive particle 310.
  • the metal layer 320 is made of a high corrosion resistant metal component such as nickel (Ni) or copper (Cu), and may be formed by an electroplating method.
  • the metal layer 320 serves to support the abrasive grains while preventing the separation of the abrasive particles 310.
  • the dot portion 300 may be manufactured to have a rounded surface through a laser processing method, but it is efficient to manufacture on the casting mold by a reverse electrodeposition method of removing the casting mold.
  • the abrasive particles 310 are about 5 ⁇ m to 400 ⁇ m size, about 90 ⁇ m to 250 ⁇ m size is appropriate.
  • a plating layer composed of chromium (Cr) may be further coated.
  • Cr chromium
  • FIG 3 is a perspective view of a CMP pad conditioner with a dot portion according to a second embodiment of the present invention.
  • the CMP pad conditioner 101 in which the dot portions 301a and 301b of the present invention are formed is a disk 201 having a disk shape and a flat top surface 211 and a flat surface 211 of the substrate 201.
  • the plurality of dot portions 301a and 301b, which are convex from, are upwardly protruded.
  • each of the dot portions 301a and 301b has the same radius of curvature R, but protrudes differently from each other.
  • a plurality of dot portions 301a and 301b are formed on the upper surface of the substrate 201, and each of them maintains a predetermined radius of curvature R.
  • the dot portions 301a and 301b are composed of a first dot portion 301a having a relatively high protrusion height and a second dot portion 301b having a relatively low protrusion height.
  • the first dot part 301a is concentrated in the first area 331 located between the center and the outer arc of the substrate 201.
  • a plurality of second dot portions 301a are concentrated in the second region 341 located between the center of the substrate 201 and the outer arc.
  • the first region 331 and the second region 341 may be formed on the flat surface 211 of the substrate 201 while crossing each other in a clockwise or counterclockwise direction.
  • FIG. 3 illustrates that the first region 331 and the second region 341 are alternately formed by three, respectively, but the present invention is not limited thereto.
  • the area of the second region 341 is larger than the area of the first region 331.
  • the first region 331 and the second region 341 are trapezoids having longest edges formed in an arc, and the first region 331 and the second region 341 are adjacent to each other.
  • the density of the first dot portion 301a formed in the first region 331 is preferably set to be equal to or greater than the density of the second dot portion 301b formed in the second region 341.
  • the density here means the number of dot portions formed per unit area.
  • Such a structure is a structure in which the first dot portion 301a touches and wears first, and then the second dot portion 301b wears during the pad dressing process.
  • Both the first dot portion 301a and the second dot portion 301b have a partial hemispherical shape having a radius of curvature R, which naturally maintains cutting force on the pad even in a differential height arrangement structure. Therefore, it is possible to minimize the deterioration phenomenon that occurs over time of the polishing process, and also to extend the operating life of the conditioner.
  • the height difference between the first dot portion 301a and the second dot portion 301b may be about 30 ⁇ m.
  • the abrasive grains 311 protrude from the outer periphery of both the first dot portion 301a and the second dot portion 301b.
  • Abrasive particles 311 is preferably composed of diamond particles having a hardness higher than the pad, the size is formed of approximately 5 ⁇ m ⁇ 400 ⁇ m.
  • the protruding heights may be formed to be the same when manufactured by the reverse electrodeposition manufacturing method, and the radius of curvature R of the first dot portion 301a or the second dot portion 301b may be formed.
  • the electrodeposition production method is appropriate, it can also be produced by other methods such as laser processing or pressing.
  • a substrate having dot portions 301a and 301b having different sizes may be manufactured in a segmented manner in which several pieces 220 are combined and assembled into a single substrate.
  • the segment manufacturing method as shown in FIGS. 9A and 9B, the plurality of substrate pieces 220 having the first dot portion 301a or the second dot portion 301b are joined to each other to form a single disc-shaped substrate. That's the way.
  • the pieces combine at least two or more with each other, where each adjacent piece 220 preferably has dots of different sizes.
  • FIG. 4 is a perspective view of a CMP pad conditioner with a dot portion according to a third embodiment of the present invention.
  • the CMP pad conditioner 102 in which the dot portions 302a and 302b of the present invention are formed includes a plurality of dot portions from the disk-shaped substrate 202 and the flat surface 212 that are substantially flat on one side thereof.
  • 302a and 302b protrude upward, and in particular, each of the dot portions 302a and 302b has different heights H 1 and H 2 and curvature radii R A and R B differ from each other, but the flat surface 212 The cross section based on) is formed in the same circle.
  • the dot portions 302a and 302b protrude upward from the flat surface 212 of the substrate 202, and each of the dot portions 302a and 302b has different heights H 1 and H 2 , It has different curvature radii (R A , R B ). At this time, the height difference is preferably about 30 ⁇ m.
  • the dot portions 302a and 302b are composed of a third dot portion 302a having a relatively small radius of curvature R A and a fourth dot portion 302b having a relatively large radius of curvature R B.
  • the third dot portion 302a and the fourth dot portion 302b have different heights H 1 and H 2 protruding from the flat surface 212 of the substrate 202 and have curvature radii R A and R B. ) Are different from each other, but the cross-sections based on the flat surface 212 are all formed of the same circle having the same horizontal radius R C.
  • the third dot portion 302a and the fourth dot portion 302b may be randomly disposed, it is preferable that the third dot portion 302a and the fourth dot portion 302b cross each other along an arc of concentric circles with respect to the center of the substrate 202. That is, as shown in FIG. 4, the third dot portion 302a and the fourth dot portion 302b are disposed at a predetermined distance from the center of the flat plate of the substrate 202 and the third dot portion 302a and the fourth dot portion. 302b are alternately arranged adjacent to each other.
  • the third dot portion 302a and the fourth dot portion 302b are alternately arranged on a line of concentric circles at a predetermined distance from the center of the substrate 202. Therefore, the fourth dot portion 302b is formed between the third dot portions 302a along the concentric circle, and the third dot portion 302a is formed between the fourth dot portions 302b. That is, when the concentric circles are located, they are alternately arranged in the order of 'the third dot portion 302a-the fourth dot portion 302b-the third dot portion 302a-the fourth dot portion 302b ...'. . At this time, the center of the concentric circles coincide with the center of the substrate 202, but each of which is formed with a plurality of different radii.
  • Both the third dot portion 302a and the fourth dot portion 302b have a center of curvature inside the substrate 202 when viewed from the side cross section. That is, the radius of curvature R A of the third dot portion 302a is larger than the protrusion height H 1 , and the radius of curvature R B of the fourth dot portion 302b is larger than the protrusion height H 2 . This is because when the center of curvature is present on the upper surface of the substrate 202, the dot portion 302 is easily damaged by the shear force, and may have a radius of curvature of 0.1 mm to 5 mm.
  • the abrasive grains 312 protrude to a predetermined height.
  • the lower portion of the abrasive particles 312 is formed with a metal layer 322 to fix the abrasive particles 312, the metal layer 322 preferably contains a high corrosion resistance component such as nickel (Ni) or copper (Cu). .
  • the metal layer 322 may be formed by electroplating.
  • a layer made of chromium (Cr) may be further plated on the surface of the metal layer 322. In this case, it is possible to reduce the surface non-uniformity generated during the etching process in the reverse electrodeposition manufacturing process, it can have a positive effect on the bearing capacity of the abrasive particles.
  • the fourth embodiment may be manufactured in a segment manner in which a plurality of pieces 220 are adjacently bonded.
  • the segment method refers to a manufacturing method in which a plurality of pieces 220 are combined with each other to form one substrate as shown in FIG. 9.
  • Coupling method of each piece 220 may be formed with protrusions and recesses to be assembled, and may be combined in other ways, such as adhesive.
  • 5A and 5B illustrate data comparing pad cutting amount (PWR) and surface roughness (R pk ) per hour according to grinding conditions between Examples and Comparative Examples of the present invention.
  • D / F is an environmental condition that is difficult to grind due to the weak pressure of the conditioner.
  • the High Cond. D / F is a favorable environmental condition because of the high pressure of the conditioner.
  • the Middle Cond. D / F is Low Cond. D / F and High Cond.
  • the pressing force on the pad was set at approximately 40N, which is a typical working environment. In each experimental condition, the hardness of the pad is substantially the same.
  • fine abrasive grains are grained on the flat surface of the substrate without the portion projected by the conventional conditioner.
  • a plurality of dot portions as in the third embodiment are protruded on the substrate, and abrasive grains are grained along the outer circumference of the dot portion.
  • FIG. 5a graphically shows the results of Table 1, which tests the pad cutting amount per hour (PWR, unit ⁇ m / hr) according to the grinding environment between the comparative example and the example.
  • the comparative example ground the pad surface by about 17.1 ⁇ m per unit time, and the example ground about 10.5 ⁇ m.
  • Middle Cond In the environment of D / F, the comparative example ground the pad surface by about 28.3 ⁇ per unit time, and the example ground about 14.5 ⁇ .
  • High Cond In the D / F environment, the comparative example ground the pad surface by about 35.2 ⁇ m per unit time, and the example ground about 15.7 ⁇ m.
  • the cutting performance of the pad is greatly changed according to the external grinding environment, whereas in the embodiment of the present invention, the cutting performance is not significantly changed even if the external grinding environment is changed. That is, the present invention can exhibit almost constant performance without being affected by the external grinding environment, which means that the user can control the surface processing of the pad as intended by predicting the cutting degree of the pad.
  • the dot structure of the present invention when the dot structure of the present invention is present, stable pad grinding performance can be exhibited without being greatly influenced by the external environment.
  • 5b is a graph showing the results of Table 2, which tests the surface roughness (R pk , unit ⁇ m) according to the grinding environment between the comparative example and the example.
  • the comparative example has a roughness of about 5.6 on the surface of the pad, and the example is about 7.2 mu m.
  • Middle Cond In the D / F environment, the comparative example has a roughness of about 6.1 mu m on the surface of the pad, and the example is about 7.6 mu m.
  • High Cond In the D / F environment, the comparative example has a roughness of about 6.5 ⁇ m on the surface of the pad, and the example is about 7.9 ⁇ m.
  • the planarization process refers to the relative rotation by pressing the wafer together with the slurry liquid onto the pad, and the higher the roughness of the pad, the higher the planarization performance.
  • the examples can grind high in the roughness of the pad in all environments having a better or lower grinding environment than the comparative example, which means that the conditioner has high dressing performance.
  • the present invention provides stable grinding without being influenced by the external grinding environment, and despite the low cutting amount, the pad surface has a high dressing effect, thereby increasing the life of the pad. It is an advantageous structure.
  • 6A and 6B are experimental data comparing performance change by measuring pad cutting amount PWR and surface roughness R pk per hour according to time between the embodiment of the present invention and the comparative example.
  • fine abrasive grains are grained on the flat surface of the substrate without protruding portions with a conventional conditioner.
  • a plurality of dot portions as in the third embodiment are protruded on the substrate, and abrasive grains are grained along the outer circumference of the dot portion.
  • FIG. 6A is experimental data observing a trend of performance change by measuring an amount of time of pad cutting (PWR) as the time of the planarization process elapses in the same grinding environment between the comparative example and the example.
  • PWR pad cutting
  • FIG. 6a it can be seen that the embodiment does not change the amount of pad cutting per hour than the comparative example. This means that the cutting performance hardly changes even after using the conditioner for a long time.
  • FIG. 6B is experimental data observing a trend of performance change by measuring a pad surface roughness (R pk ) with time of the planarization process in the same grinding environment between the comparative example and the example.
  • R pk pad surface roughness
  • the present invention can maintain a relatively constant wear force applied to a pad surface due to a dot structure having a curvature even if the surface of the conditioner is worn out after a long time of flattening.
  • the surface roughness of can also be maintained at a high level and almost constant, resulting in almost no change in performance. This has the effect of prolonging the service life of the conditioner device and at the same time has a positive effect on prolonging the life of the pad as the pad can also recover excellent surface roughness even at lower cutting volume.
  • FIG. 7 is a flowchart illustrating a method of manufacturing a CMP pad conditioner with a dot portion according to an embodiment of the present invention
  • FIGS. 8A to 8E illustrate each method of manufacturing a CMP pad conditioner with a dot portion according to an embodiment of the present invention. An illustration of the steps.
  • the manufacturing method of the CMP pad conditioner with a dot portion according to an embodiment of the present invention, first, particularly in the casting mold 400 is formed with a large number of recesses 410 Abrasive particles 310 are applied to the portion 410 (S100).
  • the conditioner 100 manufactured later has a structure in which the abrasive grains 310 protrude from the outer circumferential surface of the dot portion 300 to generate only abrasive grains necessary for the pad dressing process. Such an optimal structure can reduce the manufacturing time and manufacturing cost.
  • the recess 410 is a part of the hemisphere having a certain curvature and the center of the radius of curvature R is present outside the upper side of the casting mold 400.
  • the recess 410 is a portion recessed from the upper surface of the casting mold 400 in a rounded curved surface.
  • the cross section is expressed as round, but the actual three-dimensional image is a part of the hemispherical shape and a part of the rounded hemisphere appears in any cross section.
  • the casting mold 400 may be composed of STS (stainless steel) and is formed as a whole plate.
  • the upper surface of the casting mold 400, except for the portion where the recess 410 is formed, the other region forms a flat surface.
  • the concave portion 410 is a portion that determines the shape of the height and size of the dot portion of the conditioner, and is composed of a rounded curved surface.
  • a plurality of recesses 410 are formed in the casting mold 400, and each of the recesses 410 is formed in a predetermined spaced area from the center of the casting mold 400.
  • the plurality of recesses 410 are spaced apart while maintaining a predetermined interval, and may be formed radially from the center of the casting mold 400.
  • the concave portion 410 may have a different radius of curvature, but the depression depth is constant, so that the protrusion height of the dot portion to be generated later is uniformly formed.
  • the metal layer 320 is formed in the recess of the casting mold 400 (S200).
  • the metal layer 320 is a metal component to minimize the reaction with chemicals such as slurry to prevent the removal of the abrasive particles 310 is suitable to contain a high corrosion resistance components such as nickel (Ni) or copper (Cu),
  • the metal layer 320 is preferably coated by an electroplating method.
  • the substrate 200 may be made of nickel (Ni 2 ), and the dot part 300 may be made of nickel (Ni 2 ), which is the same material as the substrate 200.
  • Casting mold 400 is composed of a different component than the substrate 200 or the metal layer 320, it is preferably composed of stainless steel (STS).
  • STS stainless steel
  • all of the protrusion heights of the abrasive particles 310 may be uniform. That is, the most protruding points of the abrasive particles 310 are all disposed on the same circumferential peripheral edge of the same. Due to the removal of the casting mold 400, the dot portion is formed to protrude with a predetermined curvature, but the abrasive particles are not exposed to the outside.
  • the step (S400) it is etched to expose the abrasive particles to the lower surface of the metal layer 320 (S500).
  • Etching is usually performed in a chemical manner, and by controlling the etching degree of the metal layer 320, the protrusion height of the abrasive particles 310 may be adjusted almost uniformly.
  • the dot portion 300 maintains a radius of curvature substantially similar to that before etching, and the flat surface of the metal layer 320 is also substantially maintained.
  • an additional plating layer having a different component from the metal layer 320 may be formed after etching, and chromium having high corrosion resistance is preferable.
  • Such an additional plating layer (not shown) may remove the unevenness of the substrate surface that may occur during the etching process and at the same time increase the bearing capacity for the abrasive particles.
  • the present invention can manufacture a substrate in a segmented manner using a plurality of casting molds.
  • each casting mold is used to manufacture a part of a substrate, and in each casting mold, a substrate manufactured by reverse electrodeposition may be manufactured by finally assembling one substrate.
  • a substrate manufactured by reverse electrodeposition may be manufactured by finally assembling one substrate.
  • it is easy to change the distribution position of the dot portion at the point of joining various substrate pieces 220 instead of one integrated substrate.
  • it is advantageous in terms of manufacturing cost because it can be manufactured by replacing only the position of each casting mold without the need to manufacture a variety of casting molds, it is a method that can reduce the manufacturing time compared to the same substrate manufacturing.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

La présente invention concerne un conditionneur de patin de polissage mécano-chimique comprenant des sections à points et un procédé de fabrication de celui-ci, et concerne plus spécifiquement un conditionneur de patin de polissage mécano-chimique comprenant : un substrat incluant une ou plusieurs surfaces plates ; une ou plusieurs sections à points formées sur les surfaces plates ; et une pluralité de particules abrasives formées sur les surfaces des sections à points. Les sections à points sont constituées d'une surface sphérique saillante ayant un rayon de courbure (R) prédéterminé, ce qui permet d'obtenir une petite quantité de patin à couper par heure et de maintenir une rugosité de surface élevée. L'invention concerne également un procédé de fabrication de celui-ci.
PCT/KR2014/010305 2014-02-13 2014-10-30 Conditionneur de patin de polissage mécano-chimique comprenant des sections à points et son procédé de fabrication WO2015122593A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020140016586A KR101555874B1 (ko) 2014-02-13 2014-02-13 도트부를 구비한 cmp 패드 컨디셔너 및 그 제조방법
KR10-2014-0016586 2014-02-13

Publications (1)

Publication Number Publication Date
WO2015122593A1 true WO2015122593A1 (fr) 2015-08-20

Family

ID=53800303

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2014/010305 WO2015122593A1 (fr) 2014-02-13 2014-10-30 Conditionneur de patin de polissage mécano-chimique comprenant des sections à points et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR101555874B1 (fr)
WO (1) WO2015122593A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017146678A1 (fr) * 2016-02-23 2017-08-31 Intel Corporation Disques de conditionnement pour polissage mécano-chimique

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006026769A (ja) * 2004-07-14 2006-02-02 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
KR20080065612A (ko) * 2005-09-09 2008-07-14 치엔 민 성 유기성 매트릭스에 초연마 입자들을 결합시키는 방법
JP2008296319A (ja) * 2007-05-31 2008-12-11 Nikon Corp ドレッシング工具の製作方法
JP2010207943A (ja) * 2009-03-09 2010-09-24 Mitsubishi Materials Corp Ｃｍｐコンディショナー及びｃｍｐコンディショナーの製造方法
JP2012130995A (ja) * 2010-12-22 2012-07-12 Nitta Haas Inc ドレッサ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006026769A (ja) * 2004-07-14 2006-02-02 Noritake Super Abrasive:Kk Ｃｍｐパッドコンディショナー
KR20080065612A (ko) * 2005-09-09 2008-07-14 치엔 민 성 유기성 매트릭스에 초연마 입자들을 결합시키는 방법
JP2008296319A (ja) * 2007-05-31 2008-12-11 Nikon Corp ドレッシング工具の製作方法
JP2010207943A (ja) * 2009-03-09 2010-09-24 Mitsubishi Materials Corp Ｃｍｐコンディショナー及びｃｍｐコンディショナーの製造方法
JP2012130995A (ja) * 2010-12-22 2012-07-12 Nitta Haas Inc ドレッサ

Also Published As

Publication number Publication date
KR20150095364A (ko) 2015-08-21
KR101555874B1 (ko) 2015-09-30

Similar Documents

Publication Publication Date Title
US6068548A (en) Mechanically stabilized retaining ring for chemical mechanical polishing
TW383261B (en) Conditioner and conditioning disk for a CMP pad, and method of fabricating, reworking, and cleaning conditioning disk
JP3295888B2 (ja) ケミカルマシンポリッシャの研磨盤用研磨ドレッサ
US6402883B1 (en) Polishing pad conditioning surface having integral conditioning points
JPH10249710A (ja) Ｃｍｐ用偏心溝付き研磨パッド
JP2003511255A (ja) 研磨パッド用コンディショナーおよびその製造方法
EP1205280A1 (fr) Procede et dispositif de polissage de tranche
KR20130049869A (ko) 연마패드의 표면처리방법 및 이를 이용한 웨이퍼의 연마방법
KR20030020658A (ko) 화학적물리적 연마장치의 연마패드 콘디셔닝 디스크
US6402594B1 (en) Polishing method for wafer and holding plate
US5961375A (en) Shimming substrate holder assemblies to produce more uniformly polished substrate surfaces
WO2015147402A1 (fr) Procédé de fabrication d'élément de traitement à tampon et élément de traitement à tampon
KR101052325B1 (ko) Ｃｍｐ 패드 컨디셔너 및 그 제조방법
US6273794B1 (en) Apparatus and method for grinding a semiconductor wafer surface
WO2015122593A1 (fr) Conditionneur de patin de polissage mécano-chimique comprenant des sections à points et son procédé de fabrication
WO2015057003A1 (fr) Procédé pour fabriquer un conditionneur de tampon à polir
JP2002079454A (ja) 基板保持装置ならびに該基板保持装置を用いた基板研磨方法および基板研磨装置
KR101079468B1 (ko) 양면 연마장치용 캐리어 및 이를 이용한 양면 연마방법
KR100680880B1 (ko) 리테이너 링 및 이를 포함하는 화학적 기계적 연마 장치
JP4281253B2 (ja) 電着砥石とその製造装置及び製造方法
KR101043487B1 (ko) 웨이퍼 양면연마기의 연마패드 보정장치와 보정방법
KR20080061940A (ko) 연마 패드 컨디셔닝 디스크 및 이를 포함한 연마 패드컨디셔너
JP2000141204A (ja) ドレッシング装置並びにこれを用いた研磨装置及びｃｍｐ装置
JPH07112360A (ja) 半導体ウェーハの研磨方法
CN216967413U (zh) 卡环及包括该卡环的基板研磨装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 14882350

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 14882350

Country of ref document: EP

Kind code of ref document: A1