WO2015109888A1 - 一种3d发光的白光led灯条 - Google Patents

一种3d发光的白光led灯条 Download PDF

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WO2015109888A1
WO2015109888A1 PCT/CN2014/092100 CN2014092100W WO2015109888A1 WO 2015109888 A1 WO2015109888 A1 WO 2015109888A1 CN 2014092100 W CN2014092100 W CN 2014092100W WO 2015109888 A1 WO2015109888 A1 WO 2015109888A1
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led
transparent substrate
silver paste
light bar
light
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PCT/CN2014/092100
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French (fr)
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吕国峰
吕文卿
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江苏宏力光电科技有限公司
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    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V21/00—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips
    • F21V21/002—Supporting, suspending, or attaching arrangements for lighting devices; Hand grips making direct electrical contact, e.g. by piercing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • General Engineering & Computer Science (AREA)
  • Luminescent Compositions (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)

Abstract

一种3D发光的白光LED灯条，包括透明基材（1）、无背镀的LED管芯（2）， LED管芯（2）固晶于透明基材（1）上。透明基材（1）的两端表面涂覆有银浆层（3），透明基材（1）两端的银浆层（3）固定有金属引脚（4）；LED管芯（2）通过金线（5）连接，并由金线（5）和银浆层（3）连接；固晶有LED管芯（2）的透明基材（1）外裹覆黄磷荧光粉层（6）。白色灯条可以通过往所裹覆的黄磷荧光粉（6）中加入红粉来调节色温，生产得到2200K-6500K的色温产品。3D发光的白光LED灯条，没有单一的指向性发光的缺陷，如同白炽灯能360度出光，在保证光照强度的同时扩大了照射的范围。

Description

一种3D发光的白光LED灯条 技术领域
本发明涉及一种3D发光的LED灯条，尤其是涉及一种3D发光的白光LED灯条，具体涉及到一种装有能够360度出光的无背镀LED管芯的灯条。
背景技术
随着科技的不断进步，对能源的消耗越来越高，传统白炽灯(钨丝灯)由于耗能高、寿命短，在全球资源紧张的大环境下，已渐渐被各国政府禁止。随之替代产品是电子节能灯，电子节能灯虽然提高了节能效果，但由于使用了诸多污染环境的重金属元素，又有悖于环境保护的大趋势。随着LED技术的高速发展，LED照明逐渐成为新型绿色照明的不二之选。
LED球泡灯是LED照明制造厂商开发的符合现有接口和人们使用习惯的灯具，使得人们在不需要更换原传统灯具基座和线路。但是历来的LED管芯都是有背镀的，因此都是准180度发光的，只能单面出光，照射的范围小。
发明内容
本发明的目的是提供一种装有能够360度出光的无背镀LED管芯的3D发光的白光LED灯条。
本发明的目的是通过以下技术方案实现的：
一种3D发光的白光LED灯条，包括透明基材、无背镀的LED管芯，所述的LED管芯固晶于透明基材上，所述的透明基材的两端表面涂覆有银浆层，所述的透明基材两端的银浆层固定有金属引脚；所述的LED管芯通过金线连接，并由金线和银浆层连接；所述的固晶有LED管芯的透明基材外裹覆黄磷荧光粉层。
所述的LED管芯为无背镀蓝光LED管芯。
进一步的，所述的LED管芯为型号1023、1016、0928、0926、0916等无背镀LED管芯，所述的型号代表LED管芯的几何特征，如型号1023表示LED管芯为10mil×23mil(mil-inch：千分之一英寸)。所述的蓝光LED管芯发出的蓝光冲击黄磷荧光粉二次发光，发出白光，通过往黄磷荧光粉中加入红粉来调节白光的色温，是LED产业界是公知常识。
所述的LED管芯的数目为15-60颗。
所述的金属引脚和透明基材咬合固定。
所述的透明基材为蓝宝石、透明陶瓷、钢化玻璃或特种塑料。所述的特种塑料为透明导热塑料。所述的透明陶瓷为透明氧化铝陶瓷。
所述的透明基材的长度为15-40mm，宽度为0.8-2mm，厚度为0.4-0.5mm。
所述的银浆层的长度为2-2.5mm、厚度为5μm。
所述的黄磷荧光粉层的厚度为0.8-1.0mm。
本发明的有益效果：
本发明3D发光的白光LED灯条，寿命长，经济耐用，显色性高，主要用作LED照明光源的发光体，如灯丝灯。本发明白色灯条可以通过往所裹覆的黄磷荧光粉中加入红粉来调节色温，生产得到2200K-6500K的色温产品。3D发光的白光LED灯条，没有单一的指向性发光的缺陷，如同白炽灯能360度出光，在保证光照强度的同时扩大了照射的范围。3D发光的白光LED灯条是一种高压LED组合(HVLEDs)，它工作在高电压(如77VDC)、小电流(如10-15mA)环境下，可以使发光源发亮时不烫而只有微温(如35-45摄氏度)，是新一代技术的LED光源。
附图说明
图1为本发明3D发光的白光LED灯条的结构示意图。
图2为本发明3D发光的白光LED灯条金属引脚和透明基材的固定示意图。
图3为本发明3D发光的白光LED灯条金属引脚的结构示意图。
图4为图1A-A面剖视图。
其中，1-透明基材，2-LED管芯，3-银浆层，4-金属引脚，5-金线，6--黄磷荧光粉层。
具体实施方式
下面结合附图和具体实施例，对本发明做进一步说明。
如图1、图2、图3和图4所示，一种3D发光的白光LED灯条，包括透明基材1、28颗无背镀的蓝光LED管芯2，所述的LED管芯2固晶于透明基材1上，所述的透明基材1的两端表面涂覆有银浆层3，所述的透明基材1两端的银浆层3固定有金属引脚4，所述的金属引脚4和透明基材1咬合固定；所述的LED管芯通过金线5连接，并由金线1和银浆层3连接；所述的固晶有LED管芯2的透明基材1外裹覆黄磷荧光粉层6。
所述的LED管芯为无背镀蓝光LED管芯。所述的蓝光LED管芯发出的蓝光冲击黄磷荧光粉二次发光，发出白光，。
所述的透明基材为蓝宝石、透明陶瓷、钢化玻璃或特种塑料。本实施例的透明陶瓷为透明氧化铝陶瓷。
所述的透明基材的长度为15-40mm，宽度为0.8-2mm，厚度为0.4-0.5mm。本实施例的透明基材的长度为30mm，宽度为1mm，厚度为0.5mm。
所述的银浆层的长度为2-2.5mm、厚度为5μm。
所述的黄磷荧光粉层的厚度为0.8-1.0mm。
本实施例制得的3D发光的白光LED灯条，接上恒定直流电，给予一定的VF电压(如77VDC)和10-15mA的恒定直流，蓝光LED管芯发出的蓝光冲击黄磷荧光粉二次发光，灯条就能同白炽灯一样能够360度发出白光，发光亮度>110l m，显指>80，发亮时不烫而只有微温(35-45摄氏度)，通过往黄磷荧光粉中加入红粉来调节白光的色温，得到2200-6500K的色温产品。满足制造照明灯具发光的技术参数要求。

Claims (8)

  1. 一种3D发光的白光LED灯条，其特征在于它包括透明基材、无背镀的LED管芯，所述的LED管芯固晶于透明基材上，所述的透明基材的两端表面涂覆有银浆层，所述的透明基材两端的银浆层固定有金属引脚；所述的LED管芯通过金线连接，并由金线和银浆层连接；所述的固晶有LED管芯的透明基材外裹覆黄磷荧光粉层。
  2. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的LED管芯为无背镀蓝光LED管芯。
  3. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的LED管芯的数目为15-60颗。
  4. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的金属引脚和透明基材咬合固定。
  5. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的透明基材为蓝宝石、透明陶瓷、钢化玻璃或透明导热塑料。
  6. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的透明基材的长度为15-40mm，宽度为0.8-2mm，厚度为0.4-0.5mm。
  7. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的银浆层的长度为2-2.5mm、厚度为5μm。
  8. 根据权利要求1所述的3D发光的白光LED灯条，其特征在于所述的黄磷荧光粉层的厚度为0.8-1.0mm。
PCT/CN2014/092100 2014-01-22 2014-11-25 一种3d发光的白光led灯条 WO2015109888A1 (zh)

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CN110260182B (zh) * 2015-07-23 2022-12-02 晶元光电股份有限公司 发光装置
CN107686642A (zh) * 2017-09-14 2018-02-13 东莞市安塑亿高分子材料科技有限公司 一种可过滤蓝光的材料及其制备方法
CN108511432A (zh) * 2018-05-18 2018-09-07 梁倩 Led支架及封装器件

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CN201944605U (zh) * 2010-12-29 2011-08-24 葛世潮 一种P-N结4π出光的高压LED构成的LED灯泡
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CN203757475U (zh) * 2014-01-22 2014-08-06 江苏宏力光电科技有限公司 一种3d发光的彩色led灯条

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US20080273322A1 (en) * 2007-05-01 2008-11-06 Hua-Hsin Tsai Light structure
CN201944638U (zh) * 2010-11-22 2011-08-24 葛世潮 一种可直接替换白炽灯用于感应灯的led灯泡
CN102109115A (zh) * 2010-12-29 2011-06-29 葛世潮 一种P-N结4π出光的高压LED及LED灯泡
CN201944605U (zh) * 2010-12-29 2011-08-24 葛世潮 一种P-N结4π出光的高压LED构成的LED灯泡
CN202281057U (zh) * 2011-05-11 2012-06-20 浙江锐迪生光电有限公司 一种LED芯片4π出光的高效率LED发光管
CN203757474U (zh) * 2014-01-22 2014-08-06 江苏宏力光电科技有限公司 一种3d发光的白光led灯条
CN203757475U (zh) * 2014-01-22 2014-08-06 江苏宏力光电科技有限公司 一种3d发光的彩色led灯条

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