WO2015105161A1 - Heat conducting member and electronic component - Google Patents

Heat conducting member and electronic component Download PDF

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Publication number
WO2015105161A1
WO2015105161A1 PCT/JP2015/050408 JP2015050408W WO2015105161A1 WO 2015105161 A1 WO2015105161 A1 WO 2015105161A1 JP 2015050408 W JP2015050408 W JP 2015050408W WO 2015105161 A1 WO2015105161 A1 WO 2015105161A1
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WO
WIPO (PCT)
Prior art keywords
heat
tin
conducting member
heat conducting
alloy
Prior art date
Application number
PCT/JP2015/050408
Other languages
French (fr)
Japanese (ja)
Inventor
稲田　禎一
幸久 廣山
貴一 舘野
友芳 伊藤
和仁 小畑
佳嗣 松浦
裕太 中野
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日立化成株式会社
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Application filed by 日立化成株式会社 filed Critical 日立化成株式会社
Priority to JP2015556837A priority Critical patent/JPWO2015105161A1/en
Publication of WO2015105161A1 publication Critical patent/WO2015105161A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3736—Metallic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the present invention relates to a heat conducting member and an electronic component.
  • a method for releasing heat generated during operation of a semiconductor product to the outside a method of attaching a heat radiating member such as a heat sink to the semiconductor product is generally employed.
  • a heat conducting member is interposed between the semiconductor product and the heat radiating member to increase the heat conduction efficiency.
  • a heat conducting grease containing a specific base oil and a heat conducting filler such as inorganic powder (for example, see Patent Document 1), gelling an ionic liquid with a gelling agent.
  • a heat-dissipating gel composition obtained from the above, a predetermined amount of each of two types of specific organopolysiloxanes, an adhesion-imparting agent, a thermally conductive filler, and a hydrosilylation reaction catalyst
  • Conductive silicone rubber composition see, for example, Patent Document 3
  • metal foil and / or metal mesh having a specific thermal conductivity as an intermediate layer 100 parts by weight of silicone resin and thermal conductivity on both sides of the intermediate layer
  • a layer formed of a heat conductive composition containing 1,000 to 3,000 parts by weight of a filler see Patent Document 4 has been developed.
  • the material interposed between an electronic component such as a semiconductor package and a heat radiating member such as a heat sink must be (1) have high thermal conductivity, and (2) follow the unevenness of the surface of the electronic component and the surface of the heat radiating member. And (3) It is required that the protrusion in the lateral direction is small.
  • any of the conventional heat conductive materials has insufficient properties, and no material satisfying all of them has been obtained.
  • heat dissipation grease gradually protrudes laterally from the location where heat dissipation is required during use of electronic components, resulting in an insufficient amount of heat dissipation grease at the location where heat dissipation is performed. It was a problem.
  • heat dissipation grease improves fluidity and improves follow-up to unevenness, it is inevitable that the protrusion in the lateral direction will increase at the same time.
  • the heat dissipation pad has a problem in that the followability is poor at an interface with large irregularities and the thermal resistance increases.
  • the present invention has been made in view of the above circumstances, and (1) has high thermal conductivity, (2) follows the unevenness of the surface of the electronic component and the surface of the heat dissipation member, and (3) laterally. It is an object of the present invention to provide a heat conductive member having the characteristic that there is little protrusion and to provide an electronic component in which a heat radiating member is installed via the heat conductive member.
  • the present inventors have solved the above problems by a heat conductive member comprising a specific metal structure and a specific alloy containing a predetermined amount or more of tin.
  • the present invention has been found and the present invention has been completed.
  • the present invention has been completed based on such knowledge.
  • the present invention includes the following contents.
  • a heat conducting member comprising a metal structure having a through hole and an alloy containing 30% by mass or more of tin and having a melting point of 300 ° C. or less.
  • the metal according to [2], wherein the metal that does not form an intermetallic compound with copper is at least one selected from bismuth (Bi), lead (Pb), indium (In), and gallium (Ga). Thermal conduction member.
  • the present invention (1) it has high thermal conductivity, (2) it follows the unevenness of the surface of an electronic component such as a semiconductor package and the surface of a heat dissipation member, and (3) it has little protrusion in the lateral direction.
  • a heat conducting member having both characteristics can be provided.
  • the thermal conductive member of the present invention has a very small decrease in thermal conductivity after undergoing a heat cycle, is excellent in heat resistance, and has high adhesiveness, so that it can be easily disposed on an electronic component or the like.
  • the heat conducting member of the present invention is a heat conducting member comprising a metal structure having a through hole and an alloy containing 30 mass% or more of tin and having a melting point of 300 ° C. or less.
  • Metal structure with through hole As the metal forming the metal structure, it is preferable to select a metal having a thermal conductivity of 10 W / mK or more. It is preferable for the thermal conductivity of the metal to be 100 W / mK or more because heat can be efficiently dissipated in both the vertical and horizontal directions. From the same viewpoint, the thermal conductivity of the metal is more preferably 250 W / mK or more, and further preferably 300 W / mK or more.
  • the metal forming the metal structure can be selected from, for example, copper, silver, gold, nickel, zinc, aluminum, tin, indium, gallium, and an alloy containing at least one of these metals. These may be used alone or in combination of two or more. Specific examples of the alloy include brass, white and bronze. From the viewpoint of thermal conductivity and manufacturing cost, copper can be selected as the metal forming the metal structure.
  • the thickness of the metal structure is not particularly limited, and can be 3 to 300 ⁇ m. From the viewpoint of reducing the thickness of the semiconductor package, it can be 3 to 100 ⁇ m, or 5 to 30 ⁇ m. It can also be set to 30 ⁇ m.
  • the metal structure can be manufactured by, for example, a method of punching a metal foil, an electroforming method, a pattern plating method, a method of removing unnecessary portions of the metal foil by etching, or the like.
  • the pattern plating method is to prepare a plate in which an insulating resist is provided on a predetermined portion of a metal plate so that only a part of the base metal plate is exposed, and then the base metal plate is exposed by electroplating. A metal structure is formed at a location, and the metal is peeled off to obtain a metal structure having a predetermined shape.
  • the pattern plating method is preferable in that a plate can be used repeatedly and a fine pattern can be formed at low cost.
  • the metal structure may be a two-dimensional metal fiber structure in which a metal wire is woven or knitted, but may be a metal structure in which portions other than the through-holes on the surface are substantially flat. It is preferable that portions other than the through-holes on the surface of the metal structure are substantially flat in that heat conduction with an adherend such as a heat dissipation member or a semiconductor package can be efficiently performed.
  • substantially flat refers to the measurement of the thickness of 10 metal parts other than the through-holes in a sample of the size to be used, the average thickness being X, the thinnest part being Y, the thickest When the thickness of the portion is Z, (ZY) / X is 0.3 or less.
  • (ZY) / X may be 0.25 or less, or 0.22 or less. Since the surface of the two-dimensional metal fiber structure has a large unevenness, the metal structure having a substantially flat portion other than the through-holes on the surface is attached to an adherend such as a heat dissipation member or a semiconductor package. There is a tendency for heat conduction to and from the body to increase.
  • the metal structure should just have two or more through-holes, and can also have the hole (recessed part) which has not penetrated. It is preferable that a large number of through holes have a relatively uniform density over the entire surface of the metal structure.
  • An alloy described later exists in the through hole, and when the heat conduction member is installed in the electronic component, the alloy in the through hole is replenished when the alloy is insufficient to fill the unevenness of the installation part. It also has the effect of From the viewpoint of adhesiveness and thermal conductivity, the alloy preferably satisfies 95% by volume or more of the total volume of the through holes, more preferably 98% by volume or more, and substantially 100% by volume. More preferably.
  • the shape of a through-hole is a lattice shape (1), a special lattice shape (2), a honeycomb shape (3), a non-parallel lattice shape (4), and holes of different diameters.
  • Various structures such as a perforated shape (5) having a hole and a perforated shape (6) having holes of the same diameter can be adopted.
  • the lattice shape (1) can also be selected.
  • the volume ratio of the metal portion to the entire metal structure is preferably 10 to 80% by volume, more preferably 20 to 70% by volume.
  • the volume ratio of the metal portion is 10% by volume or more, it is possible to suppress a decrease in thermal conductivity and to suppress deterioration of workability due to deformation.
  • volume ratio of the metal portion is 80% by volume or less, a certain amount of through holes can be secured, so that a sufficient amount of alloy can be present in the through holes, and the thermal resistance at the interface between the electronic component and the heat conducting member. Is less likely to increase and heat conductivity to decrease.
  • the heat conducting member can be firmly joined to the electronic component and the heat radiating member. Therefore, the thermal resistance of the interface between the electronic component and the heat conducting member and the heat conducting member and the heat radiating member Thermal resistance at the interface is reduced. By improving the thermal conductivity in this way, both long-term reliability and heat dissipation can be achieved.
  • the function of holding the alloy is poor, and the alloy layer existing between the electronic component and the heat conducting member or between the heat conducting member and the heat radiating member becomes thin.
  • the heat conduction member of the present invention has a good heat conduction path because the metal such as copper having high heat conductivity is continuously present by the metal structure.
  • metal particles having high thermal conductivity for example, copper particles
  • the heat conduction member instead of using the metal structure, instead of the heat conduction member in which metal particles having high thermal conductivity (for example, copper particles) are dispersed in the alloy containing a predetermined amount or more of tin, Since an alloy having a low thermal conductivity exists between them, it is difficult to form a heat conduction path, and the thermal conductivity is lower than when a metal structure is used.
  • the content of tin in the alloy may be 50% by mass or more, 70% by mass or more, 85% by mass or more, or 90% by mass or more. It may be 95% by mass or more. Further, the content of tin can be 30 to 70% by mass, 30 to 50% by mass, or 50 to 70% by mass.
  • the melting point of the alloy may be 150 to 300 ° C, 150 to 250 ° C, or 150 to 230 ° C.
  • a known solder can be used as the alloy.
  • Lead-containing solder may be used, and lead-free solder may be used in consideration of adverse effects on the human body and the natural environment.
  • metals other than tin contained in the alloy include lead (Pb), bismuth (Bi), gold (Au), silver (Ag), zinc (Zn), copper (Cu), In (indium), and aluminum ( Al), nickel (Ni), germanium (Ge), antimony (Sb), and the like.
  • the metal other than tin contained in the alloy may contain at least one selected from bismuth (Bi), silver (Ag), copper (Cu), In (indium), and antimony (Sb). it can.
  • a metal that forms a metal structure for example, a metal that does not form an intermetallic compound with copper.
  • Examples of the metal that does not form an intermetallic compound with copper include lead (Pb), bismuth (Bi), indium (In), and gallium (Ga).
  • Pb lead
  • Bi bismuth
  • In indium
  • Ga gallium
  • the proportion of the metal that does not form an intermetallic compound increases, and the melting point of the alloy increases due to the high melting point of the metal, and the heat resistance of the heat conducting member increases. Therefore, once a heat conducting member is formed by selecting a metal other than tin contained in the alloy that has a higher melting point than tin, the alloy that forms the heat conducting member more than the alloy before use. Can increase the melting point. Since the melting point of tin is about 232 ° C., the melting point is higher than that, and examples of metals that do not form an intermetallic compound with copper include lead (melting point: about 327 ° C.), bismuth (melting point: about 271 ° C.), etc. Is mentioned.
  • the type and content of the metal are appropriately selected so that the alloy is an alloy having a melting point of 300 ° C. or less containing 30% by mass or more of tin.
  • the heat conductive member may contain the resin composition (henceforth an adhesive agent) which has adhesiveness with the said alloy.
  • the adhesive may contain a thermosetting resin, or may contain a thermoplastic resin.
  • the thermosetting resin include an epoxy resin, an acrylic resin, a cyanate resin, a silicone resin, a phenol resin, and a bismaleimide resin.
  • a thermosetting resin may be used individually by 1 type, and may use 2 or more types together.
  • thermoplastic resin examples include polyvinyl chloride resin (PVC), polyvinylidene chloride resin, polyvinyl acetate resin, polyvinyl alcohol resin (PVA), polystyrene resin (PS), acrylonitrile / butadiene / styrene copolymer resin.
  • ABS polyethylene resin
  • PE polyethylene-vinyl acetate copolymer resin
  • EVA polypropylene resin
  • TPX polymethyl methacrylate resin
  • PMMA polyether ether ketone Resin
  • PEEK polyether ether ketone Resin
  • PI Polyimide resin
  • PEI Polyetherimide resin
  • PPS Polyphenylene sulfide resin
  • Cellulose acetate Polytetrafluoroethylene resin (PTFE), Polyvinylidene fluoride resin (PVDF), Polyethylene terf Rate resin (PET), polyamide resin (nylon), polyacetal resin (POM), polyphenylene oxide resins (PPO), polycarbonate resin (PC), can be selected from polyurethane resins, polyester elastomers, polyolefin resins.
  • a thermoplastic resin may be used individually by 1 type, and may use 2 or more types together.
  • the viscosity of the adhesive When the viscosity of the adhesive is high, it does not flow, and the heat dissipation may deteriorate without following the unevenness of the surface of the electronic component and the heat radiating member. Therefore, when used, the viscosity at the operating temperature is 1,000 Pa ⁇ It may be less than or equal to s.
  • the adhesive may cause a crosslinking reaction.
  • a heat conductive member can be manufactured by the following method.
  • the molten alloy is applied to the metal structure so that all the through holes are filled.
  • the electronic component, the heat conducting member, and the heat radiating member are sufficiently brought into close contact by being sandwiched between the electronic component and the heat radiating member, for example, by shifting the electronic component to the left and right while applying a load.
  • the alloy is once melted by heating again and allowed to cool to room temperature again, thereby sufficiently bonding the electronic component, the heat conducting member, and the heat radiating member.
  • the heat conduction member sandwiched between the electronic component and the heat dissipation member has an intermetallic compound of copper and tin formed on the surface of the through hole of the metal structure. .
  • the thickness of the heat conducting member is the sum of the thickness of the metal structure and the thickness of the alloy attached to the surface. However, since the alloy flows during use, the thickness of the entire heat conducting member is not so important.
  • the heat dissipating member installed on the heat conducting member is generally called a heat sink or the like, and those generally used for electronic components can be used.
  • the heat dissipating member includes a heat sink having fins or plates made of aluminum or copper, an aluminum or copper block connected to a heat pipe, an aluminum or copper block in which cooling liquid is circulated by a pump, a Peltier Examples include an element and an aluminum or copper block provided with a Peltier element.
  • the present invention also provides an electronic component in which a heat radiating member is installed via the heat conducting member.
  • the electronic components referred to in this specification include semiconductor packages, light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LD), power semiconductor elements, CPUs (central processing units), memories, motors, and automobile electrical equipment. Or a heating element such as an audio amplifier, a display, or an electric lamp.
  • LEDs light-emitting diodes
  • LD laser diodes
  • CPUs central processing units
  • memories central processing units
  • motors motors
  • automobile electrical equipment or a heating element such as an audio amplifier, a display, or an electric lamp.
  • the pattern was formed by a pattern plating method. Specifically, a diamond-like carbon insulating resist is provided on a predetermined portion of the SUS plate, and a plate is prepared in which only a part of the underlying metal plate is exposed, and then the underlying metal plate is exposed by copper electrolytic plating.
  • a copper structure was formed at a location to be 35 ⁇ m thick, and the copper structure was peeled off to obtain a lattice copper pattern.
  • 64 solder [tin: lead ⁇ 6: 4 (mass ratio)] was melted and applied to the grid-like copper pattern. As shown in FIG. 2, the 64 solder is filled in the through holes of the grid-like copper pattern and covers the copper pattern.
  • the thickness of the heat conducting member including the copper pattern was 60 ⁇ m.
  • the heat conducting member is sandwiched between the heat radiating fin and the semiconductor package with the heat radiating copper plate exposed on the surface, and the semiconductor package is shifted to the left and right so that the heat radiating copper plate is in close contact with the load (1 kgf (9.8 N)). It was.
  • the solder was melted by heating at 260 ° C. for 5 minutes.
  • the thickness of the heat conducting member was 45 ⁇ m, and as shown in FIG. 3, some of the 64 solder slightly protruded from the end.
  • a current was applied to the semiconductor package, and the thermal resistance was calculated from the temperature rise of the thermocouple attached to the semiconductor package and the amount of power calculated from the current and voltage.
  • the thermal resistance at this time was 0.07 ° C./W.
  • the process of applying power of 10 W for 1 minute and cutting off the power for 1 minute was repeated 1000 times, and the thermal resistance was measured. The thermal resistance at this time was 0.07 ° C./W.
  • Example 1 In Example 1, a grid-like copper pattern was not used, and the same procedure was performed except that 64 solder was sandwiched between the heat radiation fin and the semiconductor package exposing the heat radiation copper plate so that the thickness of 64 solder was 45 ⁇ m. A heat conducting member was installed. The thermal resistance was calculated from the temperature rise of the thermocouple attached to the semiconductor package and the electric energy calculated from the current and voltage. The thermal resistance at this time was 0.15 ° C./W. Further, the process of applying power of 10 W for 1 minute and cutting off the power for 1 minute was repeated 1000 times, and the thermal resistance was measured. The thermal resistance at this time was 0.15 ° C./W.
  • the heat conductive member of Example 1 Since the heat conductive member of Example 1 has the specific metal structure, (1) it has high heat conductivity, and (2) follows the unevenness of the surface of the electronic component and the surface of the heat dissipation member. (3) It also has the characteristic that there is little protrusion in the lateral direction, and has a high stress relaxation property. Therefore, when the heat conductive member of the present invention is used, stable heat dissipation can be maintained even after the heat cycle.
  • the metal which forms an intermetallic compound with copper of the metal structure that is, an alloy containing tin of 30% by mass or more is used, after forming the heat conductive member, the ratio of the tin component in the alloy is Since the ratio of the remaining component, that is, lead is increased, the melting point of the alloy is increased and the heat resistance is improved.
  • the heat conducting member of the present invention is useful as a heat conducting member when attaching a heat radiating member such as a heat sink to an electronic component such as a semiconductor package.
  • Thermal conductive member 2 Metal structure 3: Through hole 4: Alloy containing 30% by mass or more of tin and having a melting point of 300 ° C. or less 5: Semiconductor package 6: Heat dissipation member

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  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
  • Coating By Spraying Or Casting (AREA)

Abstract

　Provided is a heat conducting member that exhibits a combination of the properties of (1) having high thermal conductivity, (2) being able to conform to the recesses and protrusions on the surface of an electronic component and on the surface of a heat dissipating member, and (3) not being susceptible to lateral extrusion. Also provided is an electronic component having a heat dissipating member mounted thereupon with the heat conducting member therebetween. Specifically provided are: a heat-conducting member comprising a metal structure that has through holes, and an alloy that includes at least 30 mass% tin and has a melting point of 300°C or lower; and an electronic component having a heat dissipating member mounted thereupon with the heat conducting member therebetween.

Description

熱伝導部材及び電子部品Thermal conduction member and electronic component
　本発明は、熱伝導部材及び電子部品に関する。 The present invention relates to a heat conducting member and an electronic component.
　半導体製品の大容量化、高速処理化及び微細配線化に伴い、半導体製品の作動中に発生する熱をこれまで以上に効率的に外部へ逃がすことが重要視されている。半導体製品の作動中に発生する熱を外部へ逃がす方法としては、一般的にヒートシンク等の放熱部材を半導体製品に取り付ける方法が採用されている。半導体製品から放熱部材へ熱を効率良く伝えるため、半導体製品と放熱部材との間に熱伝導部材を介在させて熱伝導効率を高めるということがなされている。
　熱伝導部材としては、特定の基油と、無機粉末等の熱伝導性充填材とを含有する熱伝導性グリース（例えば、特許文献１参照）、イオン性液体をゲル化剤によってゲル化することにより得られる放熱用ゲル状組成物（例えば、特許文献２参照）、それぞれ所定量の、特定のオルガノポリシロキサン２種類、接着性付与剤、熱伝導性充填材及びヒドロシリル化反応用触媒からなる熱伝導性シリコーンゴム組成物（例えば、特許文献３参照）、特定の熱伝導率を有する金属箔及び／又は金属メッシュを中間層とし、その中間層の両面に、シリコーン樹脂１００重量部と熱伝導性充填剤１，０００～３，０００重量部を含有する熱伝導性組成物からなる層を形成させたもの（特許文献４参照）等が開発されてきた。 With the increase in capacity, high-speed processing, and fine wiring of semiconductor products, it is important to release heat generated during operation of semiconductor products to the outside more efficiently than ever. As a method for releasing heat generated during operation of a semiconductor product to the outside, a method of attaching a heat radiating member such as a heat sink to the semiconductor product is generally employed. In order to efficiently transfer heat from a semiconductor product to a heat radiating member, a heat conducting member is interposed between the semiconductor product and the heat radiating member to increase the heat conduction efficiency.
As the heat conducting member, a heat conducting grease containing a specific base oil and a heat conducting filler such as inorganic powder (for example, see Patent Document 1), gelling an ionic liquid with a gelling agent. A heat-dissipating gel composition (see, for example, Patent Document 2) obtained from the above, a predetermined amount of each of two types of specific organopolysiloxanes, an adhesion-imparting agent, a thermally conductive filler, and a hydrosilylation reaction catalyst Conductive silicone rubber composition (see, for example, Patent Document 3), metal foil and / or metal mesh having a specific thermal conductivity as an intermediate layer, 100 parts by weight of silicone resin and thermal conductivity on both sides of the intermediate layer A layer formed of a heat conductive composition containing 1,000 to 3,000 parts by weight of a filler (see Patent Document 4) has been developed.

特開２００６－１８８６３８号公報JP 2006-188638 A 特開２００７－２８１０４８号公報JP 2007-28148 A 特開２０１１－１５３２５２号公報JP 2011-153252 A 特許第３９２８９４３号公報Japanese Patent No. 3928943

　半導体パッケージ等の電子部品とヒートシンク等の放熱部材との間に介在させる材料は、（１）高い熱伝導性を有すること、（２）電子部品の表面及び放熱部材の表面の凹凸に追従すること、及び（３）横方向へのはみ出しが少ないことが求められる。しかし、従来の熱伝導性材料はいずれかの特性が不十分であり、すべてを満足する材料は得られていなかった。
　特に、放熱グリースは、電子部品の使用中に、放熱が必要な使用箇所から徐々に横方向へはみ出し、その結果、使用箇所の放熱グリースの量が不十分になり、放熱性能が悪化することが問題になっていた。放熱グリースは、流動性を高めて凹凸への追従性を改善すると、同時に横方向へのはみ出しが大きくなることは避けられなかった。また、放熱パッドは、凹凸の大きい界面では追従性が悪く、熱抵抗が大きくなるという問題があった。　
The material interposed between an electronic component such as a semiconductor package and a heat radiating member such as a heat sink must be (1) have high thermal conductivity, and (2) follow the unevenness of the surface of the electronic component and the surface of the heat radiating member. And (3) It is required that the protrusion in the lateral direction is small. However, any of the conventional heat conductive materials has insufficient properties, and no material satisfying all of them has been obtained.
In particular, heat dissipation grease gradually protrudes laterally from the location where heat dissipation is required during use of electronic components, resulting in an insufficient amount of heat dissipation grease at the location where heat dissipation is performed. It was a problem. When heat dissipation grease improves fluidity and improves follow-up to unevenness, it is inevitable that the protrusion in the lateral direction will increase at the same time. In addition, the heat dissipation pad has a problem in that the followability is poor at an interface with large irregularities and the thermal resistance increases.

　本発明は上記事情を鑑みてなされたものであり、（１）高い熱伝導性を有する、（２）電子部品の表面及び放熱部材の表面の凹凸に追従する、及び（３）横方向へのはみ出しが少ないという特性を併せ持つ熱伝導部材を提供すること、及び該熱伝導部材を介して放熱部材が設置された電子部品を提供することを課題とする。
The present invention has been made in view of the above circumstances, and (1) has high thermal conductivity, (2) follows the unevenness of the surface of the electronic component and the surface of the heat dissipation member, and (3) laterally. It is an object of the present invention to provide a heat conductive member having the characteristic that there is little protrusion and to provide an electronic component in which a heat radiating member is installed via the heat conductive member.
　本発明者らは、上記の課題を解決すべく鋭意研究した結果、特定の金属構造体とスズを所定量以上含有する特定の合金とを含有してなる熱伝導部材が上記の課題を解決し得ることを見出し、本発明を完成するに至った。本発明は、係る知見に基づいて完成したものである。本発明は、以下の内容を含む。 As a result of earnest research to solve the above problems, the present inventors have solved the above problems by a heat conductive member comprising a specific metal structure and a specific alloy containing a predetermined amount or more of tin. The present invention has been found and the present invention has been completed. The present invention has been completed based on such knowledge. The present invention includes the following contents.
［１］貫通孔を有する金属構造体と、スズを３０質量％以上含む融点が３００℃以下の合金とを含有してなる、熱伝導部材。
［２］金属構造体が銅合金構造体であり、且つ［１］に記載の合金が銅と金属間化合物を形成しない金属を含有する、上記［１］に記載の熱伝導部材。
［３］銅と金属間化合物を形成しない金属が、ビスマス（Ｂｉ）、鉛（Ｐｂ）、インジウム（Ｉｎ）及びガリウム（Ｇａ）から選択される少なくとも１種類である、上記［２］に記載の熱伝導部材。
［４］銅合金構造体の表面の少なくとも一部に、銅とスズの金属間化合物を有する、上記［２］又は［３］に記載の熱伝導部材。
［５］銅合金構造体の貫通孔の表面に、銅とスズの金属間化合物を有する、上記［２］～［４］のいずれかに記載の熱伝導部材。
［６］金属構造体の表面の貫通孔以外の箇所が概平坦である、上記［１］～［５］のいずれかに記載の熱伝導部材。
［７］上記［１］～［６］のいずれかに記載の熱伝導部材を介して放熱部材が設置された電子部品。 [1] A heat conducting member comprising a metal structure having a through hole and an alloy containing 30% by mass or more of tin and having a melting point of 300 ° C. or less.
[2] The heat conducting member according to [1], wherein the metal structure is a copper alloy structure, and the alloy according to [1] contains a metal that does not form an intermetallic compound with copper.
[3] The metal according to [2], wherein the metal that does not form an intermetallic compound with copper is at least one selected from bismuth (Bi), lead (Pb), indium (In), and gallium (Ga). Thermal conduction member.
[4] The heat conducting member according to the above [2] or [3], which has an intermetallic compound of copper and tin on at least a part of the surface of the copper alloy structure.
[5] The heat conducting member according to any one of the above [2] to [4], which has an intermetallic compound of copper and tin on the surface of the through hole of the copper alloy structure.
[6] The heat conducting member according to any one of the above [1] to [5], wherein portions other than the through holes on the surface of the metal structure are substantially flat.
[7] An electronic component in which a heat radiating member is installed via the heat conducting member according to any one of [1] to [6].

　本発明によれば、（１）高い熱伝導性を有する、（２）半導体パッケージ等の電子部品の表面及び放熱部材の表面の凹凸に追従する、及び（３）横方向へのはみ出しが少ないという特性を併せ持つ熱伝導部材を提供できる。更に、該熱伝導部材を介して放熱部材が設置された電子部品を提供できる。
　また、本発明の熱伝導部材は、ヒートサイクルを経た後の熱伝導性の低下が非常に小さく、耐熱性にも優れ、かつ接着性も高いために電子部品上等に容易に配置可能である。
According to the present invention, (1) it has high thermal conductivity, (2) it follows the unevenness of the surface of an electronic component such as a semiconductor package and the surface of a heat dissipation member, and (3) it has little protrusion in the lateral direction. A heat conducting member having both characteristics can be provided. Furthermore, it is possible to provide an electronic component in which a heat radiating member is installed via the heat conducting member.
In addition, the thermal conductive member of the present invention has a very small decrease in thermal conductivity after undergoing a heat cycle, is excellent in heat resistance, and has high adhesiveness, so that it can be easily disposed on an electronic component or the like. .

貫通孔を有する金属構造体の形状の一例を示す模式図（上面図）である。It is a schematic diagram (top view) which shows an example of the shape of the metal structure which has a through-hole. 本発明の熱伝導部材の一態様を示す模式図（断面図）である。It is a schematic diagram (sectional drawing) which shows the one aspect | mode of the heat conductive member of this invention. 本発明の熱伝導部材の使用形態の一例を示す模式図（断面図）である。It is a schematic diagram (sectional drawing) which shows an example of the usage pattern of the heat conductive member of this invention.
［熱伝導部材］
　本発明の熱伝導部材は、貫通孔を有する金属構造体と、スズを３０質量％以上含む融点が３００℃以下の合金とを含有してなる、熱伝導部材である。

（貫通孔を有する金属構造体）
　金属構造体を形成する金属としては、熱伝導率が１０Ｗ／ｍＫ以上の金属を選択することが好ましい。金属の熱伝導率が１００Ｗ／ｍＫ以上であると、縦方向及び横両方向に効率的に熱を放散できるために好ましい。同様の観点から、金属の熱伝導率は、２５０Ｗ／ｍＫ以上であるとより好ましく、３００Ｗ／ｍＫ以上であると更に好ましい。金属構造体を形成する金属としては、例えば、銅、銀、金、ニッケル、亜鉛、アルミニウム、スズ、インジウム、ガリウム及びこれらの金属のうちの少なくとも１種類を含む合金等から選択することができる。これらは、１種類を単独で使用してもよく、２種類以上を併用してもよい。前記合金の具体例としては、例えば、黄銅、洋白、青銅等が挙げられる。
　熱伝導性及び製造コストの観点から、金属構造体を形成する金属として銅を選択することができる。
　金属構造体の厚さに特に制限はなく、３～３００μｍとすることができ、半導体パッケージの薄型化の観点から、３～１００μｍとすることもでき、５～３０μｍとすることもでき、１０～３０μｍとすることもできる。　 [Heat conduction member]
The heat conducting member of the present invention is a heat conducting member comprising a metal structure having a through hole and an alloy containing 30 mass% or more of tin and having a melting point of 300 ° C. or less.

(Metal structure with through hole)
As the metal forming the metal structure, it is preferable to select a metal having a thermal conductivity of 10 W / mK or more. It is preferable for the thermal conductivity of the metal to be 100 W / mK or more because heat can be efficiently dissipated in both the vertical and horizontal directions. From the same viewpoint, the thermal conductivity of the metal is more preferably 250 W / mK or more, and further preferably 300 W / mK or more. The metal forming the metal structure can be selected from, for example, copper, silver, gold, nickel, zinc, aluminum, tin, indium, gallium, and an alloy containing at least one of these metals. These may be used alone or in combination of two or more. Specific examples of the alloy include brass, white and bronze.
From the viewpoint of thermal conductivity and manufacturing cost, copper can be selected as the metal forming the metal structure.
The thickness of the metal structure is not particularly limited, and can be 3 to 300 μm. From the viewpoint of reducing the thickness of the semiconductor package, it can be 3 to 100 μm, or 5 to 30 μm. It can also be set to 30 μm.

　金属構造体は、例えば、金属箔をパンチングする方法、電気鋳造法、パターンめっき法、金属箔の不要な部分をエッチングにて除去する方法等により製造できる。
　このうち、パターンめっき法は、金属板の所定部分に絶縁レジストを設け、一部のみ、下地の金属板が露出するようにした版を用意し、その後、電界めっきで下地の金属板が露出する箇所に金属構造体を形成し、更に、その金属を剥離して所定形状の金属構造体を得るものである。パターンめっき法は版を繰り返し使用でき、また、微細なパターンを安価に形成できる点で好ましい。　
The metal structure can be manufactured by, for example, a method of punching a metal foil, an electroforming method, a pattern plating method, a method of removing unnecessary portions of the metal foil by etching, or the like.
Among them, the pattern plating method is to prepare a plate in which an insulating resist is provided on a predetermined portion of a metal plate so that only a part of the base metal plate is exposed, and then the base metal plate is exposed by electroplating. A metal structure is formed at a location, and the metal is peeled off to obtain a metal structure having a predetermined shape. The pattern plating method is preferable in that a plate can be used repeatedly and a fine pattern can be formed at low cost.

　金属構造体は金属のワイヤーを織物状又は編物状にした２次元金属繊維構造体であってもよいが、表面の貫通孔以外の箇所が概平坦である金属構造体であってもよい。金属構造体の表面の貫通孔以外の箇所が概平坦であると、放熱部材や半導体パッケージ等の被着体との間の熱伝導を効率的に行える点で好ましい。ここで「概平坦」とは、使用する寸法のサンプルにおいて、貫通孔以外の金属部の１０箇所の厚さを測定し、その平均厚さをＸ、最も薄い部分の厚さをＹ、最も厚い部分の厚さをＺとすると、（Ｚ－Ｙ）／Ｘが０．３以下であることである。（Ｚ－Ｙ）／Ｘは０．２５以下であってもよいし、０．２２以下であってもよい。
　前記２次元金属繊維構造体は表面の凹凸が大きいため、表面の貫通孔以外の箇所が概平坦である金属構造体の方が、放熱部材や半導体パッケージ等の被着体との間の被着体との間の熱伝導が高くなる傾向にある。　
The metal structure may be a two-dimensional metal fiber structure in which a metal wire is woven or knitted, but may be a metal structure in which portions other than the through-holes on the surface are substantially flat. It is preferable that portions other than the through-holes on the surface of the metal structure are substantially flat in that heat conduction with an adherend such as a heat dissipation member or a semiconductor package can be efficiently performed. Here, “substantially flat” refers to the measurement of the thickness of 10 metal parts other than the through-holes in a sample of the size to be used, the average thickness being X, the thinnest part being Y, the thickest When the thickness of the portion is Z, (ZY) / X is 0.3 or less. (ZY) / X may be 0.25 or less, or 0.22 or less.
Since the surface of the two-dimensional metal fiber structure has a large unevenness, the metal structure having a substantially flat portion other than the through-holes on the surface is attached to an adherend such as a heat dissipation member or a semiconductor package. There is a tendency for heat conduction to and from the body to increase.

　金属構造体は貫通孔を複数有していればよく、貫通していない孔（凹部）を有することもできる。貫通孔は、金属構造体の全面にわたって比較的均一な密度で多数あることが好ましい。
　貫通孔には後述する合金が存在しており、熱伝導部材を電子部品に設置する際に設置部の凹凸を充填するのに合金が不足しているときに、貫通孔内の合金によって補給される作用をも有する。接着性及び熱伝導性の観点から、合金は、貫通孔の全体積の９５体積％以上を満たしていることが好ましく、９８体積％以上満たしていることがより好ましく、実質的に１００体積％満たしていることが更に好ましい。
　貫通孔の形状に特に制限はなく、例えば、円形、四角形、多角形、ギザギザ形状、ラセン形状等が挙げられる。また、各形状が組み合わさっていてもよい。貫通孔を有する金属構造体の形状は、図１に示すような、格子状（１）、特殊格子状（２）、蜂の巣状（３）、非平行格子状（４）、異径の穴を有する穴あき状（５）及び同径の穴からなる穴あき状（６）等、多様な構造をとることができる。このような金属構造体を設けることで、合金の流動性をある程度維持しながら、過剰なはみだしや膜厚の極端な低減を防止することができる。特に、入手容易性及び製造コストの観点から、格子状（１）を選択することもできる。
　金属構造体の全体（貫通孔及び貫通していない空孔を含む。）に対する金属部分の体積比は１０～８０体積％が好ましく、２０～７０体積％がより好ましい。金属部分の体積比が１０体積％以上であれば、熱伝導性の低下を抑制でき、かつ変形して作業性が悪化するのを抑制できる。また金属部分の体積比が８０体積％以下であれば、貫通孔を一定量確保できるため、十分な量の合金を貫通孔に存在させることができ、電子部品と熱伝導部材の界面の熱抵抗が上昇して熱伝導性が低下するというおそれが少ない。　
The metal structure should just have two or more through-holes, and can also have the hole (recessed part) which has not penetrated. It is preferable that a large number of through holes have a relatively uniform density over the entire surface of the metal structure.
An alloy described later exists in the through hole, and when the heat conduction member is installed in the electronic component, the alloy in the through hole is replenished when the alloy is insufficient to fill the unevenness of the installation part. It also has the effect of From the viewpoint of adhesiveness and thermal conductivity, the alloy preferably satisfies 95% by volume or more of the total volume of the through holes, more preferably 98% by volume or more, and substantially 100% by volume. More preferably.
There is no restriction | limiting in particular in the shape of a through-hole, For example, circular, a square, a polygon, a jagged shape, a spiral shape etc. are mentioned. Moreover, each shape may be combined. As shown in FIG. 1, the shape of the metal structure having a through hole is a lattice shape (1), a special lattice shape (2), a honeycomb shape (3), a non-parallel lattice shape (4), and holes of different diameters. Various structures such as a perforated shape (5) having a hole and a perforated shape (6) having holes of the same diameter can be adopted. By providing such a metal structure, it is possible to prevent excessive protrusion and extreme reduction of the film thickness while maintaining the fluidity of the alloy to some extent. In particular, from the viewpoint of availability and manufacturing cost, the lattice shape (1) can also be selected.
The volume ratio of the metal portion to the entire metal structure (including through holes and non-through holes) is preferably 10 to 80% by volume, more preferably 20 to 70% by volume. When the volume ratio of the metal portion is 10% by volume or more, it is possible to suppress a decrease in thermal conductivity and to suppress deterioration of workability due to deformation. If the volume ratio of the metal portion is 80% by volume or less, a certain amount of through holes can be secured, so that a sufficient amount of alloy can be present in the through holes, and the thermal resistance at the interface between the electronic component and the heat conducting member. Is less likely to increase and heat conductivity to decrease.

　金属構造体が貫通孔を有することで、熱伝導部材が電子部品及び放熱部材と強固に接合し得る構造となるため、電子部品と熱伝導部材の界面の熱抵抗及び熱伝導部材と放熱部材の界面における熱抵抗が低減する。こうして熱伝導率を改善することで、長期信頼性と放熱性を両立することができる。
　一方、貫通孔がない金属構造体の場合、合金を保持する機能に乏しく、電子部品と熱伝導部材の間又は熱伝導部材と放熱部材の間に存在する合金の層が薄くなり、その結果、接着性が低下して剥離の原因となり、電子部品と熱伝導部材の界面及び熱伝導部材と放熱部材の界面における熱抵抗が増大するという欠点がある。
　本発明の熱伝導部材は、前記金属構造体によって熱伝導率の高い銅等の前記金属が連続して存在しているため、良好な熱伝導パスを有する。一方、前記金属構造体を用いず、その代わりに、スズを所定量以上含む前記合金に熱伝導率の高い金属粒子（例えば銅粒子等）を分散させた熱伝導部材では、分散した金属粒子の間に熱伝導率の低い合金が存在するため、熱伝導パスが形成されにくく、金属構造体を用いた場合に比べて熱伝導性が低くなる。　
Since the metal structure has a through hole, the heat conducting member can be firmly joined to the electronic component and the heat radiating member. Therefore, the thermal resistance of the interface between the electronic component and the heat conducting member and the heat conducting member and the heat radiating member Thermal resistance at the interface is reduced. By improving the thermal conductivity in this way, both long-term reliability and heat dissipation can be achieved.
On the other hand, in the case of a metal structure having no through-hole, the function of holding the alloy is poor, and the alloy layer existing between the electronic component and the heat conducting member or between the heat conducting member and the heat radiating member becomes thin. There is a drawback in that the adhesiveness is reduced to cause peeling, and the thermal resistance at the interface between the electronic component and the heat conducting member and at the interface between the heat conducting member and the heat radiating member is increased.
The heat conduction member of the present invention has a good heat conduction path because the metal such as copper having high heat conductivity is continuously present by the metal structure. On the other hand, instead of using the metal structure, instead of the heat conduction member in which metal particles having high thermal conductivity (for example, copper particles) are dispersed in the alloy containing a predetermined amount or more of tin, Since an alloy having a low thermal conductivity exists between them, it is difficult to form a heat conduction path, and the thermal conductivity is lower than when a metal structure is used.
（スズを３０質量％以上含む融点が３００℃以下の合金）

　本実施形態では、スズを３０質量％以上含む融点が３００℃以下の合金を用いることで、オイルや樹脂を主成分とする従来の放熱部材に比べ、高い熱伝導率及び耐熱性を達成することができる。該合金におけるスズの含有量は、５０質量％以上であってもよいし、７０質量％以上であってもよいし、８５質量％以上であってもよいし、９０質量％以上であってもよいし、９５質量％以上であってもよい。また、スズの含有量は、３０～７０質量％とすることもできるし、３０～５０質量％とすることもできるし、５０～７０質量％とすることもできる。
　合金の融点は、１５０～３００℃であってもよく、１５０～２５０℃であってもよく、１５０～２３０℃であってもよい。
　合金としては、公知のはんだを使用することができる。鉛を含むはんだであってもよいし、人体及び自然環境への悪影響を考慮して、無鉛はんだを用いてもよい。　 (Alloy containing 30 mass% or more of tin and having a melting point of 300 ° C. or less)

In this embodiment, by using an alloy having a melting point of not less than 300 ° C. and containing 30% by mass or more of tin, high thermal conductivity and heat resistance can be achieved as compared with a conventional heat radiating member mainly composed of oil or resin. Can do. The content of tin in the alloy may be 50% by mass or more, 70% by mass or more, 85% by mass or more, or 90% by mass or more. It may be 95% by mass or more. Further, the content of tin can be 30 to 70% by mass, 30 to 50% by mass, or 50 to 70% by mass.
The melting point of the alloy may be 150 to 300 ° C, 150 to 250 ° C, or 150 to 230 ° C.
A known solder can be used as the alloy. Lead-containing solder may be used, and lead-free solder may be used in consideration of adverse effects on the human body and the natural environment.

　合金に含まれるスズ以外の金属としては、例えば、鉛（Ｐｂ）、ビスマス（Ｂｉ）、金（Ａｕ）、銀（Ａｇ）、亜鉛（Ｚｎ）、銅（Ｃｕ）、Ｉｎ（インジウム）、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）、ゲルマニウム（Ｇｅ）、アンチモン（Ｓｂ）等が挙げられる。これらの中でも、合金が含有するスズ以外の金属として、ビスマス（Ｂｉ）、銀（Ａｇ）、銅（Ｃｕ）、Ｉｎ（インジウム）及びアンチモン（Ｓｂ）から選択される少なくとも１種類を含有することができる。特に金属構造体を形成する金属、例えば銅と金属間化合物を形成しない金属を含有することが好ましい。銅と金属間化合物を形成しない金属としては、例えば、鉛（Ｐｂ）、ビスマス（Ｂｉ）、インジウム（Ｉｎ）、ガリウム（Ｇａ）等が挙げられる。
　スズを３０質量％以上含む合金を溶融すると、スズが金属構造体と金属間化合物を形成し、合金の融点が上昇する傾向にある。この現象は、金属構造体が銅を含有する金属構造体である場合には、銅とスズの金属間化合物を形成し易いため、顕著に発現する。金属間化合物を形成すると、金属間化合物の形成に使われた金属の分だけ、合金中のその金属の含有量は低減する。その結果、金属間化合物を形成しない金属の比率が高まり、該金属の融点の高さに引っぱられて合金の融点が高まり、熱伝導部材の耐熱性が上昇する。そのため、合金に含まれるスズ以外の金属として、スズよりも融点の高いものを選択することにより、一旦熱伝導部材を形成したら、使用前の合金よりも熱伝導部材を形成している合金の方が融点を高めることができる。スズの融点は約２３２℃であるため、それより融点が高く、且つ、例えば銅と金属間化合物を形成しない金属としては、鉛（融点：約３２７℃）、ビスマス（融点：約２７１℃）等が挙げられる。　
Examples of metals other than tin contained in the alloy include lead (Pb), bismuth (Bi), gold (Au), silver (Ag), zinc (Zn), copper (Cu), In (indium), and aluminum ( Al), nickel (Ni), germanium (Ge), antimony (Sb), and the like. Among these, the metal other than tin contained in the alloy may contain at least one selected from bismuth (Bi), silver (Ag), copper (Cu), In (indium), and antimony (Sb). it can. In particular, it is preferable to contain a metal that forms a metal structure, for example, a metal that does not form an intermetallic compound with copper. Examples of the metal that does not form an intermetallic compound with copper include lead (Pb), bismuth (Bi), indium (In), and gallium (Ga).
When an alloy containing 30 mass% or more of tin is melted, tin forms a metal structure and an intermetallic compound, and the melting point of the alloy tends to increase. This phenomenon is remarkably exhibited when the metal structure is a metal structure containing copper because an intermetallic compound of copper and tin is easily formed. When an intermetallic compound is formed, the content of the metal in the alloy is reduced by the amount of metal used to form the intermetallic compound. As a result, the proportion of the metal that does not form an intermetallic compound increases, and the melting point of the alloy increases due to the high melting point of the metal, and the heat resistance of the heat conducting member increases. Therefore, once a heat conducting member is formed by selecting a metal other than tin contained in the alloy that has a higher melting point than tin, the alloy that forms the heat conducting member more than the alloy before use. Can increase the melting point. Since the melting point of tin is about 232 ° C., the melting point is higher than that, and examples of metals that do not form an intermetallic compound with copper include lead (melting point: about 327 ° C.), bismuth (melting point: about 271 ° C.), etc. Is mentioned.

　合金は、スズを３０質量％以上含む融点が３００℃以下の合金となるよう、金属の種類及び含有量を適宜選択する。具体的には、スズ含有率９２～９７質量％のスズ－鉛合金、スズ含有率５５～６５質量％のいわゆる６４はんだ、スズ含有率４５～５５質量％のスズ－鉛合金、スズ含有率３５～４５質量％のスズ－鉛合金等のスズ－鉛系合金：スズ含有率５５～６０質量％及びビスマス含有率１～５質量％のスズ－鉛－ビスマス合金、スズ含有率４０～５０質量％及びビスマス含有率３～１０質量％のスズ－鉛－ビスマス合金等のスズ－鉛－ビスマス系合金；スズ含有率５５～７０質量％及び銀含有率１～５質量％のスズ－鉛－銀合金等のスズ－鉛－銀系合金；スズ含有率３５～４５質量％のスズ－ビスマス合金等のスズ－ビスマス系合金；スズ含有率９０～９７質量％のスズ－アンチモン合金等のスズ－アンチモン系合金；スズ含有率９５～９９質量％のスズ－銀合金等のスズ－銀系合金；スズ含有率９５～９９．５質量％のスズ－銅合金等のスズ－銅系合金；スズ含有率４５～５５質量％のスズ－インジウム合金等のスズ－インジウム系合金などが挙げられる。　
The type and content of the metal are appropriately selected so that the alloy is an alloy having a melting point of 300 ° C. or less containing 30% by mass or more of tin. Specifically, a tin-lead alloy having a tin content of 92 to 97 mass%, a so-called 64 solder having a tin content of 55 to 65 mass%, a tin-lead alloy having a tin content of 45 to 55 mass%, a tin content of 35 Tin-lead alloys such as tin-lead alloys of up to 45% by mass: tin-lead-bismuth alloys with a tin content of 55-60% by mass and a bismuth content of 1-5% by mass, tin content of 40-50% by mass And a tin-lead-bismuth alloy such as a tin-lead-bismuth alloy having a bismuth content of 3-10% by mass; a tin-lead-silver alloy having a tin content of 55-70% by mass and a silver content of 1-5% by mass Tin-lead-silver alloys such as tin; tin-bismuth alloys such as tin-bismuth alloys with a tin content of 35 to 45% by mass; tin-antimony alloys such as tin-antimony alloys with a tin content of 90 to 97% by mass Alloy; tin content 95-99% by mass Tin-silver alloys such as tin-silver alloys; tin-copper alloys such as tin-copper alloys with a tin content of 95-99.5% by mass; tin-indium alloys with a tin content of 45-55% by mass, etc. Examples include tin-indium alloys.

　また、熱伝導部材は、前記合金と共に、接着性を有する樹脂組成物（以下、接着剤と称する）を含有してなるものであってもよい。接着剤を使用することにより、高い凹凸追従性とコストの低減を図ることができる。
　接着剤は、熱硬化性樹脂を含有するものであってもよいし、熱可塑性樹脂を含有するものであってもよい。熱硬化性樹脂としては、例えば、エポキシ樹脂、アクリル樹脂、シアネート樹脂、シリコーン樹脂、フェノール樹脂、ビスマレイミド樹脂等が挙げられる。熱硬化性樹脂は、１種類を単独で使用してもよいし、２種類以上を併用してもよい。また、熱可塑性樹脂としては、例えば、ポリ塩化ビニル樹脂（ＰＶＣ）、ポリ塩化ビニリデン樹脂、ポリ酢酸ビニル樹脂、ポリビニルアルコール樹脂（ＰＶＡ）、ポリスチレン樹脂（ＰＳ）、アクリロニトリル・ブタジエン・スチレン共重合体樹脂（ＡＢＳ）、ポリエチレン樹脂（ＰＥ）、エチレン・酢酸ビニル共重合体樹脂（ＥＶＡ）、ポリプロピレン樹脂（ＰＰ）、ポリ４－メチルペンテン樹脂（ＴＰＸ）、ポリメチルメタクリレート樹脂（ＰＭＭＡ）、ポリエーテルエーテルケトン樹脂（ＰＥＥＫ）、ポリイミド樹脂（ＰＩ）、ポリエーテルイミド樹脂（ＰＥＩ）、ポリフェニレンサルファイド樹脂（ＰＰＳ）、酢酸セルロース、ポリ四フッ化エチレン樹脂（ＰＴＦＥ）、ポリフッ化ビニリデン樹脂（ＰＶＤＦ）、ポリエチレンテレフタレート樹脂（ＰＥＴ）、ポリアミド樹脂（ナイロン等）、ポリアセタール樹脂（ＰＯＭ）、ポリフェニレンオキシド樹脂（ＰＰＯ）、ポリカーボネート樹脂（ＰＣ）、ポリウレタン樹脂、ポリエステルエラストマ、ポリオレフィン樹脂等から選択することができる。熱可塑性樹脂は、１種類を単独で使用してもよいし、２種類以上を併用してもよい。　
Moreover, the heat conductive member may contain the resin composition (henceforth an adhesive agent) which has adhesiveness with the said alloy. By using an adhesive, high unevenness followability and cost reduction can be achieved.
The adhesive may contain a thermosetting resin, or may contain a thermoplastic resin. Examples of the thermosetting resin include an epoxy resin, an acrylic resin, a cyanate resin, a silicone resin, a phenol resin, and a bismaleimide resin. A thermosetting resin may be used individually by 1 type, and may use 2 or more types together. Examples of the thermoplastic resin include polyvinyl chloride resin (PVC), polyvinylidene chloride resin, polyvinyl acetate resin, polyvinyl alcohol resin (PVA), polystyrene resin (PS), acrylonitrile / butadiene / styrene copolymer resin. (ABS), polyethylene resin (PE), ethylene-vinyl acetate copolymer resin (EVA), polypropylene resin (PP), poly-4-methylpentene resin (TPX), polymethyl methacrylate resin (PMMA), polyether ether ketone Resin (PEEK), Polyimide resin (PI), Polyetherimide resin (PEI), Polyphenylene sulfide resin (PPS), Cellulose acetate, Polytetrafluoroethylene resin (PTFE), Polyvinylidene fluoride resin (PVDF), Polyethylene terf Rate resin (PET), polyamide resin (nylon), polyacetal resin (POM), polyphenylene oxide resins (PPO), polycarbonate resin (PC), can be selected from polyurethane resins, polyester elastomers, polyolefin resins. A thermoplastic resin may be used individually by 1 type, and may use 2 or more types together.

　接着剤の粘度が高いと、流動せず、電子部品及び放熱部材の表面の凹凸に追従できずに放熱性が悪化することがあるので、使用時、使用温度での粘度は、１，０００Ｐａ・ｓ以下であるとよい。
　また、接着剤は架橋反応を起こすものであってもよい。　
When the viscosity of the adhesive is high, it does not flow, and the heat dissipation may deteriorate without following the unevenness of the surface of the electronic component and the heat radiating member. Therefore, when used, the viscosity at the operating temperature is 1,000 Pa · It may be less than or equal to s.
The adhesive may cause a crosslinking reaction.

　本発明の熱伝導部材の形成方法に特に制限はない。例えば、以下の方法によって熱伝導部材を製造できる。
　前記金属構造体に溶融した合金を貫通孔が全て埋るように塗布する。次いで電子部品と放熱部材の間に挟み、例えば荷重を掛けながら電子部品を左右にずらすことにより、電子部品と熱伝導部材と放熱部材とを十分に密着させる。それから、再度加熱することで合金を一旦溶融させ、再び室温まで放冷することにより、電子部品と熱伝導部材と放熱部材とを十分に接着させる。
　電子部品と放熱部材とに挟まれている熱伝導部材は、例えば金属構造体が銅を含有する場合、その金属構造体の貫通孔の表面に、銅とスズの金属間化合物が形成されている。　
There is no restriction | limiting in particular in the formation method of the heat conductive member of this invention. For example, a heat conductive member can be manufactured by the following method.
The molten alloy is applied to the metal structure so that all the through holes are filled. Next, the electronic component, the heat conducting member, and the heat radiating member are sufficiently brought into close contact by being sandwiched between the electronic component and the heat radiating member, for example, by shifting the electronic component to the left and right while applying a load. Then, the alloy is once melted by heating again and allowed to cool to room temperature again, thereby sufficiently bonding the electronic component, the heat conducting member, and the heat radiating member.
For example, when the metal structure contains copper, the heat conduction member sandwiched between the electronic component and the heat dissipation member has an intermetallic compound of copper and tin formed on the surface of the through hole of the metal structure. .

　熱伝導部材の厚さは、金属構造体の厚さと表面に付着した前記合金の厚さの和になるが、合金は使用時に流動するため、熱伝導部材全体の厚さはあまり重要ではない。　
The thickness of the heat conducting member is the sum of the thickness of the metal structure and the thickness of the alloy attached to the surface. However, since the alloy flows during use, the thickness of the entire heat conducting member is not so important.
　熱伝導部材上に設置する放熱部材は、一般的にヒートシンク等と称され、電子部品に一般的に使用されるものを使用できる。放熱部材としては、アルミニウム製又は銅製のフィン又は板を有するヒートシンク、ヒートパイプに接続されているアルミニウム製又は銅製のブロック、内部に冷却液体をポンプで循環させているアルミニウム製又は銅製のブロック、ペルチェ素子、ペルチェ素子を備えたアルミニウム製又は銅製のブロック等が挙げられる。
　本発明は、前記熱伝導部材を介して放熱部材が設置された電子部品をも提供する。
　なお、本明細書でいう電子部品は、半導体パッケージのほか、発光ダイオード（ＬＥＤ）及びレーザダイオード（ＬＤ）等の発光素子、パワー半導体素子、ＣＰＵ（中央処理装置）、メモリ、モーター、自動車用電装品、オーディオアンプ、ディスプレイ、電灯等の発熱体であってもよい。 The heat dissipating member installed on the heat conducting member is generally called a heat sink or the like, and those generally used for electronic components can be used. The heat dissipating member includes a heat sink having fins or plates made of aluminum or copper, an aluminum or copper block connected to a heat pipe, an aluminum or copper block in which cooling liquid is circulated by a pump, a Peltier Examples include an element and an aluminum or copper block provided with a Peltier element.
The present invention also provides an electronic component in which a heat radiating member is installed via the heat conducting member.
The electronic components referred to in this specification include semiconductor packages, light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LD), power semiconductor elements, CPUs (central processing units), memories, motors, and automobile electrical equipment. Or a heating element such as an audio amplifier, a display, or an electric lamp.

　以下に実施例を用いて本発明を具体的に説明するが、本発明は、これらの実施例に限定されるものではない。　
EXAMPLES The present invention will be specifically described below with reference to examples, but the present invention is not limited to these examples.
［実施例１］

　図１（１）に示すような金属構造体として、パターン幅５０μｍ、厚さ３５μｍ、パターン間の距離７０μｍの格子状銅パターンを形成した。その際のパターン厚さのばらつきは±３μｍ［（Ｚ－Ｙ）／Ｘ＝０．１７］であった。なお、パターンは、パターンめっき法により形成した。詳細には、ＳＵＳ板の所定部分にダイヤモンドライクカーボンの絶縁レジストを設け、一部のみ、下地の金属板が露出するようにした版を用意し、その後、銅電解めっきで下地の金属板が露出する箇所に３５μｍ厚になるように銅構造体を形成し、更に、その銅構造体を剥離して格子状銅パターンを得た。
　この格子状銅パターンに、６４はんだ［スズ：鉛≒６：４（質量比）］を溶融して塗布した。該６４はんだは、図２に示すように、格子状銅パターンの貫通孔に満たされており、また、銅パターンを覆っている。銅パターンを含む熱伝導部材の厚さは６０μｍであった。該熱伝導部材を、放熱フィンと、放熱銅板を表面露出する半導体パッケージとの間に挟み、良く密着するように左右に半導体パッケージをずらしながら荷重（１ｋｇｆ（９．８Ｎ））をかけて密着させた。さらに２６０℃で５分間加熱することで、はんだを溶融させた。このときの熱伝導部材の厚さは４５μｍであり、図３に示す様に、一部の６４はんだは、少し端部にはみ出していた。
　半導体パッケージに電流を印加し、半導体パッケージに取り付けた熱電対の温度上昇と、電流、電圧から計算した電力量から、熱抵抗を算出した。このときの熱抵抗は０．０７℃／Ｗであった。また、１分間１０Ｗの電力印加を行い、１分間電力を遮断する過程を１０００回繰り返した後、熱抵抗を測定したところ、このときの熱抵抗は０．０７℃／Ｗであった。　 [Example 1]

A grid-like copper pattern having a pattern width of 50 μm, a thickness of 35 μm, and a distance between patterns of 70 μm was formed as a metal structure as shown in FIG. The variation in pattern thickness at that time was ± 3 μm [(Z−Y) /X=0.17]. The pattern was formed by a pattern plating method. Specifically, a diamond-like carbon insulating resist is provided on a predetermined portion of the SUS plate, and a plate is prepared in which only a part of the underlying metal plate is exposed, and then the underlying metal plate is exposed by copper electrolytic plating. A copper structure was formed at a location to be 35 μm thick, and the copper structure was peeled off to obtain a lattice copper pattern.
64 solder [tin: lead≈6: 4 (mass ratio)] was melted and applied to the grid-like copper pattern. As shown in FIG. 2, the 64 solder is filled in the through holes of the grid-like copper pattern and covers the copper pattern. The thickness of the heat conducting member including the copper pattern was 60 μm. The heat conducting member is sandwiched between the heat radiating fin and the semiconductor package with the heat radiating copper plate exposed on the surface, and the semiconductor package is shifted to the left and right so that the heat radiating copper plate is in close contact with the load (1 kgf (9.8 N)). It was. Furthermore, the solder was melted by heating at 260 ° C. for 5 minutes. At this time, the thickness of the heat conducting member was 45 μm, and as shown in FIG. 3, some of the 64 solder slightly protruded from the end.
A current was applied to the semiconductor package, and the thermal resistance was calculated from the temperature rise of the thermocouple attached to the semiconductor package and the amount of power calculated from the current and voltage. The thermal resistance at this time was 0.07 ° C./W. Further, the process of applying power of 10 W for 1 minute and cutting off the power for 1 minute was repeated 1000 times, and the thermal resistance was measured. The thermal resistance at this time was 0.07 ° C./W.

［比較例１］
　実施例１において、格子状銅パターンを使用せず、６４はんだの厚さが４５μｍになるように、放熱フィンと放熱銅板を表面露出する半導体パッケージの間に６４はんだを挟んだこと以外は同様にして熱伝導部材を設置した。
　この、半導体パッケージに取り付けた熱電対の温度上昇と、電流、電圧から計算した電力量から、熱抵抗を算出した。このときの熱抵抗は０．１５℃／Ｗであった。また、１分間１０Ｗの電力印加を行い、１分間電力を遮断する過程を１０００回繰り返した後、熱抵抗を測定したところ、このときの熱抵抗は０．１５℃／Ｗであった。　
[Comparative Example 1]
In Example 1, a grid-like copper pattern was not used, and the same procedure was performed except that 64 solder was sandwiched between the heat radiation fin and the semiconductor package exposing the heat radiation copper plate so that the thickness of 64 solder was 45 μm. A heat conducting member was installed.
The thermal resistance was calculated from the temperature rise of the thermocouple attached to the semiconductor package and the electric energy calculated from the current and voltage. The thermal resistance at this time was 0.15 ° C./W. Further, the process of applying power of 10 W for 1 minute and cutting off the power for 1 minute was repeated 1000 times, and the thermal resistance was measured. The thermal resistance at this time was 0.15 ° C./W.

　実施例１の熱伝導部材は、前記特定の金属構造体を有しているために、（１）高い熱伝導性を有し、（２）電子部品の表面及び放熱部材の表面の凹凸に追従し易く、（３）横方向へのはみ出しが少ないという特性を併せ持っており、更に、応力緩和性が大きい。そのため、本発明の熱伝導部材を用いると、ヒートサイクルを経た後も安定した放熱性を維持できた。また、金属構造体の銅と金属間化合物を形成する金属、つまりスズを３０質量％以上含有する合金を用いているため、熱伝導部材を形成した後には、合金中のスズの成分の割合が減少しており、残りの成分、つまり鉛の割合が大きくなっているため、合金の融点が高まり、耐熱性が改善されている。
Since the heat conductive member of Example 1 has the specific metal structure, (1) it has high heat conductivity, and (2) follows the unevenness of the surface of the electronic component and the surface of the heat dissipation member. (3) It also has the characteristic that there is little protrusion in the lateral direction, and has a high stress relaxation property. Therefore, when the heat conductive member of the present invention is used, stable heat dissipation can be maintained even after the heat cycle. Moreover, since the metal which forms an intermetallic compound with copper of the metal structure, that is, an alloy containing tin of 30% by mass or more is used, after forming the heat conductive member, the ratio of the tin component in the alloy is Since the ratio of the remaining component, that is, lead is increased, the melting point of the alloy is increased and the heat resistance is improved.
　本発明の熱伝導部材は、半導体パッケージ等の電子部品にヒートシンク等の放熱部材を取り付ける際の熱伝導部材として有用である。
The heat conducting member of the present invention is useful as a heat conducting member when attaching a heat radiating member such as a heat sink to an electronic component such as a semiconductor package.

　１：熱伝導部材
　２：金属構造体
　３：貫通孔
　４：スズを３０質量％以上含む融点が３００℃以下の合金
　５：半導体パッケージ
　６：放熱部材
1: Thermal conductive member 2: Metal structure 3: Through hole 4: Alloy containing 30% by mass or more of tin and having a melting point of 300 ° C. or less 5: Semiconductor package 6: Heat dissipation member

Claims (7)

  1. 　貫通孔を有する金属構造体と、スズを３０質量％以上含む融点が３００℃以下の合金とを含有してなる、熱伝導部材。 A heat conducting member comprising a metal structure having a through hole and an alloy containing 30 mass% or more of tin and having a melting point of 300 ° C or lower.
  2. 　金属構造体が銅合金構造体であり、且つ請求項１に記載の合金が銅と金属間化合物を形成しない金属を含有する、請求項１に記載の熱伝導部材。 The heat conductive member according to claim 1, wherein the metal structure is a copper alloy structure, and the alloy according to claim 1 contains a metal that does not form an intermetallic compound with copper.
  3. 　銅と金属間化合物を形成しない金属が、ビスマス（Ｂｉ）、鉛（Ｐｂ）、インジウム（Ｉｎ）及びガリウム（Ｇａ）から選択される少なくとも１種類である、請求項２に記載の熱伝導部材。 The heat conducting member according to claim 2, wherein the metal that does not form an intermetallic compound with copper is at least one selected from bismuth (Bi), lead (Pb), indium (In), and gallium (Ga).
  4. 　銅合金構造体の表面の少なくとも一部に、銅とスズの金属間化合物を有する、請求項２又は３に記載の熱伝導部材。 The heat conducting member according to claim 2 or 3, wherein an intermetallic compound of copper and tin is present on at least a part of the surface of the copper alloy structure.
  5. 　銅合金構造体の貫通孔の表面に、銅とスズの金属間化合物を有する、請求項２～４のいずれか１項に記載の熱伝導部材。 The heat conducting member according to any one of claims 2 to 4, comprising an intermetallic compound of copper and tin on the surface of the through hole of the copper alloy structure.
  6. 　金属構造体の表面の貫通孔以外の箇所が概平坦である、請求項１～５のいずれか１項に記載の熱伝導部材。 The heat conducting member according to any one of claims 1 to 5, wherein a portion other than the through hole on the surface of the metal structure is substantially flat.
  7. 　請求項１～６のいずれか１項に記載の熱伝導部材を介して放熱部材が設置された電子部品。 An electronic component in which a heat dissipating member is installed via the heat conducting member according to any one of claims 1 to 6.
PCT/JP2015/050408 2014-01-10 2015-01-08 Heat conducting member and electronic component WO2015105161A1 (en)

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EP3567361A1 (en) 2011-10-27 2019-11-13 Veltek Associates, INC. Air sample tracking system and method
EP3851828A1 (en) 2011-10-27 2021-07-21 Veltek Associates, INC. Air sample tracking system and method
JP2017038025A (en) * 2015-08-13 2017-02-16 沖電気工業株式会社 Heat dissipation structure, housing, and portable terminal
WO2017168925A1 (en) * 2016-03-28 2017-10-05 株式会社村田製作所 Joint
JP2018120907A (en) * 2017-01-24 2018-08-02 トヨタ自動車株式会社 Heat dissipation sheet
CN111244048A (en) * 2020-03-12 2020-06-05 上海金克半导体设备有限公司 High-power surface-mounted diode
US11599167B2 (en) 2020-08-07 2023-03-07 Samsung Display Co., Ltd. Heat radiating member and display device including the same
WO2024161828A1 (en) * 2023-02-01 2024-08-08 株式会社ロータス・サーマル・ソリューション Thermal interface structure, thermal interface structure body, method for producing thermal interface structure body, and method for forming thermal interface structure

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