WO2015100829A1 - 制造显示装置的方法和修复方法以及液晶显示面板 - Google Patents

制造显示装置的方法和修复方法以及液晶显示面板 Download PDF

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Publication number
WO2015100829A1
WO2015100829A1 PCT/CN2014/071421 CN2014071421W WO2015100829A1 WO 2015100829 A1 WO2015100829 A1 WO 2015100829A1 CN 2014071421 W CN2014071421 W CN 2014071421W WO 2015100829 A1 WO2015100829 A1 WO 2015100829A1
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Prior art keywords
data line
semiconductor layer
conductor
layer
display device
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French (fr)
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郑扬霖
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US14/241,830 priority Critical patent/US9529239B2/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136263—Line defects

Definitions

  • the present invention relates to a display device, particularly a display device for liquid crystal display.
  • the present invention also relates to a repair method of such a display device, and a liquid crystal display panel including such a display device. Background technique
  • a liquid crystal display panel includes a display substrate, an opposite substrate facing the display substrate, and a liquid crystal layer interposed between the display substrate and the opposite substrate.
  • the display substrate includes a switching element and a pixel electrode. A voltage is applied to the liquid crystal layer to control the transmittance of light transmitted through the liquid crystal layer, and an image is displayed.
  • the switching element is usually a thin film transistor
  • the source of the thin film transistor is connected to the data line
  • the drain is connected to the pixel electrode.
  • the data line is prone to breakage and is difficult to repair, which reduces the yield of the liquid crystal display panel. Summary of the invention
  • the present invention proposes a method of manufacturing a display device. According to this method, the broken data line can be easily repaired, thereby improving the yield of the display device or the liquid crystal display panel.
  • the present invention also relates to a method of repairing such a display device and a liquid crystal display panel including such a display device.
  • a method of manufacturing a display device comprising: - Step 1: sequentially disposing a gate and a scan line, a first insulating layer and a semiconductor layer on a substrate; and second step: in a semiconductor layer Determining the position of the data line, and setting the engraving blocking layer on the semiconductor layer from the position of the data line;
  • Step 3 Modifying the semiconductor layer in the position of the data line into a conductor
  • Step 4 disposing a source, a drain, a data line, and a second insulating layer on the semiconductor layer.
  • the resistance lag of the thin film transistor can be greatly reduced by changing the semiconductor under the data line into a conductor, and thus the line defect caused by the process can be reduced.
  • the semiconductor layer is irradiated with ultraviolet light to modify it into a conductor.
  • the wavelength of the ultraviolet light used is less than 400 nm.
  • the ultraviolet radiation causes the semiconductor to be modified into a conductor, which is easy to operate and can process multiple components at the same time. Improve work efficiency.
  • the semiconductor layer is bombarded with a plasma to modify it into a conductor.
  • the plasma contains hydrogen ions. The use of a plasma containing hydrogen ions to modify the semiconductor does not require an additional machine or process, which simplifies the operation of the process relative to the use of ultraviolet light, facilitating production.
  • the semiconductor layer is indium gallium zinc oxide.
  • the carrier mobility of indium gallium zinc oxide is much higher than that of amorphous silicon. Therefore, the use of indium gallium zinc oxide as the semiconductor layer can greatly increase the charge and discharge rate of the thin film transistor on the pixel electrode, improve the response speed of the pixel electrode, and The fast response speed greatly increases the pixel scanning rate of the pixel, enabling the display device to achieve ultra-high resolution and improved display quality.
  • the data line is made of copper or a copper alloy.
  • the resistance of copper or copper alloys is small, which helps to reduce the lag of the thin film transistors.
  • a method of repairing the display device described above is proposed. After the data line is broken, the disconnected data line segments are respectively fused with the conductor layer under the data line. And it was fixed.
  • the semiconductor layer at the data line has been previously modified into a conductor layer, it is only necessary to fuse the data line segment with the conductor layer to realize the communication of the data line, and the repair is realized. This greatly reduces the difficulty of the repair work, and this repair does not have any adverse effect on the data transmission, and can improve the yield of the display device.
  • the fusion is achieved by illuminating the data line segments with a laser and fusing them with the conductor layers.
  • a liquid crystal display panel comprising a display device manufactured according to the method described above.
  • the advantages of the present invention are as follows: (1) The thin film transistor is configured to be modified into a conductor under the data line, which greatly reduces the resistance delay hysteresis of the thin film transistor, thereby overcoming the lag delay The resulting signal propagation delay, inter-line interference, and power dissipation defects further improve the display quality of the display device.
  • the semiconductor layer is indium gallium zinc oxide. Indium gallium zinc oxidation The carrier mobility of the material is much higher than that of amorphous silicon. The use of indium gallium zinc oxide as the semiconductor layer can greatly increase the charge and discharge rate of the thin film transistor on the pixel electrode, improve the response speed of the pixel, and improve the response speed faster.
  • the line scan rate of the pixel enables the display device to achieve ultra-high resolution and improved display quality.
  • FIG. 1 is a schematic view showing a layered structure of a display device according to the present invention
  • Figure 2 is a plan view of a display device in accordance with the present invention.
  • Figure 3 is a schematic view of repairing a display device according to the present invention.
  • Figure 4 shows the change in properties of steel gallium zinc oxide after exposure to ultraviolet light.
  • Fig. i schematically shows a schematic view of a layered structure of a display device 10 according to the present invention.
  • a thin film transistor 11 is provided on the display device 10.
  • the thin film transistor 11 is a common element in the field of liquid crystal display, and its arrangement in the display device 10 is well known to those skilled in the art and will not be described herein.
  • the method of preparing the thin film transistor U will be mainly described here.
  • the preparation of the thin film transistor] 1 includes the following steps.
  • a gate electrode B and a scan line 14 are disposed on the substrate 12, then a first insulating layer 15 is disposed on the gate electrode 13 and the scan line 14, and then a semiconductor layer 6 is disposed on the first insulating layer 5, wherein the semiconductor layer 16 is above the cabinet 13 and the scan line 14.
  • the term "above” means that a portion of the projection of the semiconductor layer 6 toward the substrate 12 necessarily falls within the outline of the gate 13 and the scan line 14, but the semiconductor layer 16 is not in direct contact with the gate 3 and the scan line i4. For example, it has a first insulating layer 15 between it.
  • the position 23 of the data line 17 is determined on the semiconductor layer 16. Then on the semiconductor layer 16 An etch stop layer 18 is provided at a position 23 of the data line 17. Next, the semiconductor in the position 23 of the data line 17 is modified into a conductor. as shown in picture 2.
  • a source 19, a drain 20, a data line 17, and a second insulating layer 22 are provided on the semiconductor layer 6.
  • the data line 17 is made of copper or a copper alloy.
  • the copper alloy may be a Ti/Cu alloy or a Mo/Cu alloy.
  • the data line 7 is also electrically connected to the source 19, and the drain 20 is electrically connected to a pixel electrode (not shown) to form the display device 10. These are also well known to those skilled in the art and will not be described again here.
  • the RC delay of the thin film transistor 11 can be greatly reduced, and the signal propagation delay caused by the RC delay, the inter-line interference, and the power dissipation defect are overcome.
  • the display quality of the display device 10 is improved.
  • the semiconductor used herein is selected to be indium gallium zinc oxide (i.e., IGZO).
  • Indium gallium zinc oxide has a high carrier mobility, and thus the use of S gallium zinc oxide as a semiconductor layer can greatly increase the charge and discharge rate of the thin film transistor and improve the response speed of the pixel electrode. Moreover, the faster response speed greatly increases the pixel scanning rate of the pixel, enabling the display device 10 to achieve ultra-high resolution and improved display quality.
  • an etch stop layer 8 in order to modify the semiconductor layer 16 in the position 23 of the data line to a conductor, an etch stop layer 8 should first be provided on the semiconductor layer 16 and exposed within the position 23 of the data line 17.
  • Semiconductor layer 16. thus, during the processing, the etch stop layer 18 protects the semiconductor layer 16 other than the blackout position 23 from being affected, and only the semiconductor layer 16 at the position 23 is processed to become a conductor.
  • Indium gallium zinc oxide is sensitive to ultraviolet light and tends to be a conductor under ultraviolet light. As shown in Figure 4, the current increases significantly as the illumination wavelength approaches the ultraviolet region. Based on this characteristic of the steel gallium zinc oxide, different treatments can be performed before and after the etch stop layer 18 is provided to modify the semiconductor layer 16 in the position 23 of the data line 17 into a conductor by using ultraviolet light having a wavelength range of less than 400 nm. The light illuminates the semiconductor layer in position 23 until its electrical conductivity meets the requirements. The use of ultraviolet radiation enables simultaneous processing of multiple components, greatly increasing the efficiency of fraud. Alternatively, the semiconductor layer can be bombarded at location 23 to modify it into a conductor. In a preferred embodiment, the plasma contains hydrogen ions.
  • indium gallium zinc oxide using a plasma containing hydrogen ions does not require an additional machine or process compared to the modification of indium gallium zinc oxide using ultraviolet light, which simplifies the operation steps compared to the use of ultraviolet light irradiation. Convenient for production, it is therefore preferred to use plasma to modify indium gallium zinc oxide.
  • FIG. 3 schematically shows a method of repairing the display device 10.
  • the copper data line 17 is prone to breakage. Also, since the size of the data line 17 is small, for example, its width is usually between 4 and 6 ⁇ m, it is difficult to repair in a subsequent process in the prior art.
  • the broken data line segments 25, 26 can be repaired by fusing together the conductor layer 16 under the data line 17, respectively. . This greatly reduces the difficulty of the repair work, and the repair does not have any adverse effect on the data transfer, thereby improving the yield of the display device 10.
  • the data line segments 25, 26 can be illuminated by laser and welded to the conductor layer 16, since the laser is easily focused to a small spot while having a high energy.
  • the present invention also relates to a liquid crystal display panel (not shown) including the display device 10. Since the present application does not change the main structure of the display device 10, those skilled in the art can easily use it for a liquid crystal display panel.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

一种制造显示装置（10）的方法，包括：步骤一：在基板（12）上顺次设置栅极（13）和扫描线（14）、第一绝缘层（15）和半导体层（16）；步骤二：在半导体层（16）上确定数据线（17）的位置（23），在半导体层（16）上偏离数据线（17）的位置（23）设置蚀刻阻止层（18）；步骤三：将数据线（17）的位置（23）内的半导体层（16）改性为导体；步骤四：在半导体层（16）上设置源极（19）、漏极（20）、数据线（17）以及第二绝缘层（22）。还提供了一种修复方法，包括当数据线（17）发生断线后，将断开的数据线（17）片段分别与处于数据线（17）下方的导体层熔接在一起。还披露了一种液晶显示面板。显示装置（10）的显示品质高，并且易于修复。

Description

制造显示装置的方法和修复方法以及液晶显示面板 技术领域
本发明涉及一种显示装置， 特别是 ^于液晶显示的显示装置。 本发明还涉及 这种显示装置的修复方法， 以及包括这种显示装置的液晶显示面板。 背景技术
通常， 液晶显示面板包括显示基板、 面对该显示基板的相对基板、 以及介于 该显示基板和该相对基板之间的液晶层。 该显示基板包括幵关元件和像素电极。 向液晶层施加电压来控制光透过液晶层的透射率， ^而显示图像。
在现有技术中， 幵关元件通常为薄膜晶体管， 薄膜晶体管的源极与数据线相 连， 漏极与像素电极相连。 数据线容易发生断裂并 ϋ难以修复， 这降低了液晶显 示面板的合格率。 发明内容
针对上述^题， 本发明提出了一种制造显示装置的方法。 根据这种方法， 能 够容易地修复断裂的数据线， 从而提高显示装置或液晶显示面板的合格率。 本发 明还涉及修复这种显示装置的方法和包括这种显示装置的液晶显示面板。
根据本发明的第一方面， 提出了一种制造显示装置的方法， 包括- 步骤一： 在基板上顺次设置栅极和扫描线、 第一绝缘层和半导体层； 歩骤二： 在半导体层上确定数据线位置， 在半导体层上偏离数据线位置设置 饨刻阻止层；
歩骤三： 将数据线位置内的半导体层改性为导体；
步骤四： 在半导体层上设置源极、 漏极、 数据线以及第二绝缘层。
根据本发明的方法， 通过将数据线下方的半导体变成导体能够大大降低薄膜 晶体管的阻容迟滞， 并因此减少因制程造成的线缺陷。
在一个实施倒中，在步骤三中，使用紫外光照射半导体层而将其改性成导体。 例如， 所使用的紫外光的波长小于 400mn。 在蚀刻阻止层的保护下， 使 ]¾紫外线 照射使半导体改性成导体， 操作方便， 并旦能够同时对多个部件进行处理， 大大 提高了工作效率。
在 ·个实施倒中， 在步骤 中， 使用等离子体轰击半导体层而将其改性成导 体。 在一个优选的实施飼中， 等离子体包含氢离子。 使用包含氢离子的等离子体 对半导体进行改性不需要额外的机台或制程， 这相对于使用紫外光照射简化了操 作歩骤， 方便了生产。
在一个实施例中， 半导体层为铟镓锌氧化物。 铟镓锌氧化物的载流子迁移率 远高于非晶硅， 因此使用铟镓锌氧化物作为半导体层能够大大提高薄膜晶体管对 素电极的充放电速率， 提高像素电极的响应速度， 而且更快的响应速度大提高了 像素的行扫描速率， 使得显示装置能够实现超高分辨率， 提高了显示品质。
在一个实施例中， 数据线的村质为铜或铜合金。 铜或铜合金的电阻很小， 有 助于降低薄膜晶体管的阻容迟滞。
根据本发明的第二方面， 提出了一种修复上文所述的显示装置的方法， 当数 据线发生断线后， 将断开的数据线片段分别与处于数据线下方的导体层熔接到一 起而得以修复。
根据这种修复方法， 由于预先已经将数据线处的半导体层改性成导体层， 因 此仅需要将数据线片段与该导体层熔接在一起就能实现数据线的连通， ^而实现 修复。 这大大降低了修复工作的难度， 并且这种修复不会对数据传输带来任何不 利影响， 丛而能提高显示装置的成品率。 在一个优选的实施例中， 熔接通过激光 照射数据线片段并与将其与导体层熔接而实现。
根据本发明的第三方面， 提出了一种液晶显示面板， 其包括根据上文所述的 方法制造的显示装置。
本文中描述的所有方法都可以合适的顺序执行， 除非本文中另外指出， 或除 非清楚地与上下文矛盾。 任何及所有示例或示例性语言 （例如 "诸如" ） 的使用 都仅用于更好地示出示例性实施例， 并不对本发明的范围施加限制， 除非另有要 求。 在本文中， 说明书中的任何语言都不应该被解释为将任何未要求保护的元件 指示为实践本文中的发明所必须的。
与现有技术相比， 本发明的优点在于： （1 ) 将薄膜晶体管构造为在数据线 下方的半导体改性为导体， 这大大降低了薄膜晶体管的阻容迟滞， 从而克服了由 阻容迟滞引起的信号传播延迟、 线间千扰以及功率耗散缺陷， 进而提高了显示装 置的显示品质。 （2) 在薄膜晶体管中， 半导体层为铟镓锌氧化物。 铟镓锌氧化 物的载流子迁移率远高于非晶硅， 使用铟镓锌氧化物作为半导体层能够大大提高 薄膜晶体管对素电极的充放电速率， 提高像素的响应速度， 而且更快的响应速度 大提高了像素的行扫描速率， 使得显示装置能够实现超高分辨率， 提高了显示品 质。 （3 ) 在修复显示装置时， 由于预先已经将数据线处的半导体层改性成导体 层， 因此仅需要将断裂的数据线片段与导体层瑢接在一起就能实现数据线的连 通， 从而实现修复。 这大大降低了修复工诈的难度， 并 ϋ这种修复不会对数据传 输带来任何不利影响， 从而能提高显示装置的成品率。 附图说明
在下文中将基于实施倒并参考^图来对本发明进行更详细的描述。 其中; 图 1是根据本发明的显示装置的层状结构示意图；
图 2是根据本发明的显示装置的俯视图；
图 3是修复根据本发明的显示装置的示意图；
图 4显示了钢镓锌氧化物在受紫外线照射后的性能变化。
在 图中， 相同的部件使用相同的^图标记。 附图并未按照实际的比例。 具体实施方式
下面将结合對图对本发明作迸一步说明。
图 i示意性地显示了根据本发明的显示装置 10的层状结构示意图。 在显示 装置 10上设置有薄膜晶体管 11。薄膜晶体管 11是液晶显示领域中常见的幵关元 件， 其在显示装置 10 中的布置方式是本领域的技术人员所熟知的， 这里不再赘 述。 这里重点描述薄膜晶体管 U的制备方法。
制备薄膜晶体管】1包括以下步骤。
首先， 在基板 12上设置栅极 B和扫描线 14, 接着在栅极 13和扫描线 14上 设置第一绝缘层 15 , 然后在第一绝缘层】5上设置半导体层】6, 其中半导体层 16 处于櫥极 13和扫描线 14上方。 用语 "上方"是指， 半导体层】6朝向基板 12的 投影必然有一部分落到栅极 13和扫描线 14的范 i簡内， 但是半导体层 16与栅极 3和扫描线 i4不直接接触， 例如它 ίΠ之间具有第一绝缘层 15。 这些步骤是本领 域的技术人员所熟知的， 这里不再赘述。
接着， 在半导体层 16上确定数据线 17的位置 23。 然后在半导体层 16上偏 离数据线 17的位置 23设置蚀刻阻止层 18。接下来， 将数据线 17的位置 23内的 半导体改性为导体。 如图 2所示。
最后， 在半导体层】6上设置源极 19、 漏极 20、 数据线 17以及第二绝缘层 22。 在 ·个实施倒中， 数据线 17 的材质为铜或铜合金。 在一个实施例中， 铜合 金可为 Ti/Cu合金或 Mo/Cu合金。 还将数据线 7与源极 19电连接， 漏极 20与 像素电极（未示出） 电连接而形成显示装置 10。 这些也是本领域的技术人员所熟 知的， 这里不再赘述。
通过将数据线下方的半导体变成导体， 能够大大降低薄膜晶体管 11 的阻容 迟滞 （RC delay) , 丛而克服了由阻容迟滞引起的信号传播延迟、 线间千扰以及 功率耗散缺陷， 提高了显示装置 10的显示品质。
这里所使用的半导体选择为铟镓锌氧化物（即， IGZO ) 。 铟镓锌氧化物的载 流子迀移率很高， 由此使用 S镓锌氧化物作为半导体层能够大大提高薄膜晶体管 1】对素电极的充放电速率， 提高像素电极的响应速度。而且更快的响应速度大提 高了像素的行扫描速率， 使得显示装置 10 能够实现超高分辨率， 提高了显示品 质。
以铜镓锌氧化物为例， 为了将数据线 Π的位置 23 内的半导体层 16改性为 导体， 应当首先在半导体层 16上设置蚀刻阻止层 8， 并且露出数据线 17的位置 23内的半导体层 16。 这样在进行处理时， 蚀刻阻止层 18会保沪除位置 23之外 的半导体层 16不受影响， 仅位置 23处的半导体层 16受到处理而变成导体。
ώ于铟镓锌氧化物对紫外光比较敏感， 在紫外光的照射下其趋向于导体， 如 图 4所示， 随着照明波长接近紫外区， 电流显著增加。 基于钢镓锌氧化物的这种 特性， 可在设置蚀刻阻止层 18前后进行不同处理以将数据线 17的位置 23内的 半导体层 16改性为导体， 这可通过使用波长范围小于 400nm的紫外光照射位置 23内半导体层， 直到其导电能力达到要求而实现。使用紫外线照射能够同时对多 个部件进行处理， 大大提高了工诈效率。 另外， 还可以使用等离子体轰击位置 23 处半导体层而将其改性成导体。 在一个优选的实施例中， 这种等离子体包含有氢 离子。 使用含氢离子的等离子体对铟镓锌氧化物改性与使用紫外线对铟镓锌氧化 物改性相比， 不需要额外的机台或制程， 这相对于使用紫外光照射简化了操作步 骤， 方便了生产， 因此优选使用等离子对铟镓锌氧化物改性。
图 3示意性地显示了修复显示装置 10方法。铜质数据线 17很容易发生断裂， 并旦由于数据线 17的尺寸很小， 例如其宽度通常在 4- 6μιη之间， 造成在现有技 术中的后续制程中难以修复。 在本发明中， 由于已经将数据线 17 下方的半导体 层 16改性为导体， 因此可以将断开的数据线片段 25、 26分别与处于数据线 17 下方的导体层 16熔接在一起而得以修复。 这大大降低了修复工作的难度， 并且 这种修复不会对数据传输带来任何不利影响， 从而能提高显示装置 10的成品率。 在一个优选的实施例中， 可通过激光照射数据线片段 25、 26并将其与导体层 16 熔接而实现， 这是由于激光易于被聚焦到很小的光斑， 同时具有很高的能量。
本发明还涉及包括显示装置 10 的液晶显示面板 （未示出） 。 由于本申请并 没有改变显示装置 10 的主体结构， 因此本领域的技术人员能容易地将其用于液 晶显示面板。
虽然己经参考优选实施例对本发明进行了描述， 但在不脱离本发明的范围的 情况下， 可以对其进行各种改进并且可以用等效物替换其中的部件。 尤其是， 只 要不存在结构冲突， 各个实施例中所提到的各项技术特征均可以任意方式组合起 来。 本发明并不局限于文中公开的特定实施例， 而是包括落入权利要求的范围内 的所有技术方案。

Claims

权利要求书
1 . 一种制造显示装置的方法， 包括：
步骤一： 在基板上顺次设置栅极和扫描线、 第一绝缘层和半导体层； 歩骤二： 在所述半导体层上确定数据线位置， 在所述半导体层上偏离所述数 据线位置设置蚀刻阻止层；
步骤三； 将所述数据线位置內的半导体层改性为导体；
步骤四： 在所述半导体层上设置源极、 漏极、 数据线以及第二绝缘层。
2. 根据权利要求 1 所述的方法， 其中， 在所述步骤 中， 使用紫外光照射 所述半导体层而将其改性成导体。
3. 根据权利要求 2所述的方法， 其中， 所使用的紫外光的波长小于 40(him。
4. 根据权利要求 1 所述的方法， 其中， 在所述步骤 _三中， 使用等离子体轰 击所述半导体层而将其改性成导体。
5. 根据权利要求 4所述的方法， 其中， 所述等离子体包含氢离子。
6, 根据权利要求 3所述的方法， 其中， 所述半导体层为铟镓锌氧化物。
7. 根据权利要求 5所述的方法， 其中， 所述半导体层为铟镓锌氧化物。
8. 根据权利要求 1所述的方法， 其中， 所述数据线的材质为铜或铜合金。
9. 一种液晶显示面板， 包括根据权利要求 i所述的方法制造的显示装置。
10. 一种修复根据权利要求 i所述的显示装置的方法， 其中， 当所述数据线 发生断线后， 将所述断开的数据线; t段分别与处于所述数据线下方的导体层熔接 在一起而得以修复。
11 - 根据权利要求 10所述的方法， 其中， 所述熔接通过激光照射所述数据 线片段并将其与所述导体层熔接而实现。
PCT/CN2014/071421 2013-12-31 2014-01-24 制造显示装置的方法和修复方法以及液晶显示面板 Ceased WO2015100829A1 (zh)

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